JPS6018949A - Semiconductor voltage control resistor - Google Patents
Semiconductor voltage control resistorInfo
- Publication number
- JPS6018949A JPS6018949A JP12604083A JP12604083A JPS6018949A JP S6018949 A JPS6018949 A JP S6018949A JP 12604083 A JP12604083 A JP 12604083A JP 12604083 A JP12604083 A JP 12604083A JP S6018949 A JPS6018949 A JP S6018949A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- voltage control
- vcr
- semiconductor
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は半導体装置１％に半導体基体表面の拡散抵抗と
金属酸化物半導体（ＭＯＳ）構造を利用した電圧制御抵
抗（ＶＣＲ）装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a voltage controlled resistor (VCR) device that utilizes a diffusion resistance on the surface of a semiconductor substrate and a metal oxide semiconductor (MOS) structure in a semiconductor device.
電子回路においてＶＣＲを構成する場合１例えば抵抗と
トランジスタ等を一つの回路に組合せたドルビーＩＣ（
半導体集積回路）が知られているが、素子数が多く構造
も複雑・でチップ面積も大きくならざるを得ない。When configuring a VCR in an electronic circuit 1 For example, Dolby IC (which combines resistors, transistors, etc. into one circuit)
Semiconductor integrated circuits (Semiconductor integrated circuits) are well known, but they have a large number of elements, a complex structure, and a large chip area.
本発明の目的は半導体拡散抵抗とＭＯ８構造とを一体化
した一つの複合素子からなり、小型化。The purpose of the present invention is to form a single composite element that integrates a semiconductor diffused resistor and an MO8 structure, and to miniaturize it.
低価格化できる半導体ＶＯＲな提供することにある。The aim is to provide a semiconductor VOR that can be lowered in price.
本願において開示される発明のうち代表的なものの概要
を簡単に、説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、半導体の一主表面に一部で平行して対向し他
部で連続する拡散抵抗が形成され、対向する拡散抵抗間
の半導体表面に絶縁膜を介してゲートが形成され、この
ゲートへの電圧印加によって拡散抵抗を制御する一体化
した一つの複合素子からなる半導体ＶＣＲを構成するも
のである。That is, diffused resistors are formed on one main surface of a semiconductor, parallel to each other in some parts and continuous in other parts, and a gate is formed on the semiconductor surface between the opposing diffused resistors with an insulating film interposed therebetween. This constitutes a semiconductor VCR consisting of one integrated composite element that controls diffusion resistance by applying voltage.
第１図は本発明の一実施例であって半導体拡散抵抗とＭ
Ｏ８構造とを一体に組合せて一累子としたＶＣＲ装置の
平面図であり、第２図は第１図におけるＡ −Ａ’切断
断面図である。FIG. 1 shows an embodiment of the present invention, in which a semiconductor diffused resistor and M
FIG. 2 is a plan view of a VCR device in which the O8 structure is integrated into a unit; FIG. 2 is a cross-sectional view taken along the line A-A' in FIG. 1;
１は半導体基体１例えばｐ型Ｓｉ（シリコン）基体、２
は基体１表面に形成したｎ型拡赦層からなる拡散抵抗で
ある。この拡散抵抗は一部で平行して対向し、他部で連
続するコ字形パターンとして形成され、その両端部にコ
ンタクトするアルミニウム電極３ａ、３ｂが設けられる
。４はアルミニウム等からなるゲート電極で対向する拡
散抵抗間の半導体表面上に絶縁膜（Ｓ ｒ ０２膜）５
を介して設けられる。すなわちこの部分はｎ型拡散層２
゜２をソース・ドレインとし、絶縁ゲート電極４を有す
るｎチャネルＭＯ８ＦＥＴ（を界効果トランジスタ）を
構成するものであり、全体としては第３図に等価回路図
で示す拡散抵抗とＭＯＳＦＥＴとを一体に組合せたー素
子からなるＶＣＲを構成する。1 is a semiconductor substrate 1, for example, a p-type Si (silicon) substrate; 2
is a diffused resistor consisting of an n-type ambiguous layer formed on the surface of the substrate 1. This diffused resistor is formed as a U-shaped pattern that faces parallel in some parts and continues in other parts, and aluminum electrodes 3a and 3b are provided in contact with both ends thereof. 4 is a gate electrode made of aluminum or the like, and an insulating film (S r 02 film) 5 is formed on the semiconductor surface between the opposing diffused resistors.
provided through. In other words, this part is the n-type diffusion layer 2
゜ constitutes an n-channel MO8FET (field effect transistor) having a source and drain and an insulated gate electrode 4, and as a whole, the diffused resistor and MOSFET shown in the equivalent circuit diagram in Fig. 3 are integrated. A VCR is constructed from a combination of elements.
このような半導体装置のＶＣＲとしての動作は下記のよ
うにして行われる。The operation of such a semiconductor device as a VCR is performed as follows.
（１）電極３ａをＶＤ、電極３ｂを接地側（ＧＮＤ）に
接続し、ゲートへの印加電圧ＶＧ＝０とした場合。(1) When the electrode 3a is connected to VD, the electrode 3b is connected to the ground side (GND), and the voltage applied to the gate is set to VG=0.
拡散抵抗の抵抗値は■−■−■−■−■の間の直列抵抗
（Ｒ＋ 十Ｒ２＋Ｒ３＋Ｒ４＋Ｒ５＋Ｒａ＋ Ｒ））と
これと並列の抵抗Ｒ６＝Ｒ？とによってあられされる。The resistance value of the diffused resistor is the series resistance between ■-■-■-■-■ (R+ 1R2+R3+R4+R5+Ra+R)) and the parallel resistance R6=R? It will come by.
しかし、Ｖ、＝Ｏであるため、Ｒ，、Ｒ。However, since V,=O,R,,R.
は無限大の大きさであるから、結果として抵抗値は、Ｒ
Ｉ＋Ｒ２＋Ｒ３＋Ｒ４＋ＦＬｓ 十Ｒｅ＋Ｒ７で表わさ
れる。has an infinite size, so the resistance value is R
I+R2+R3+R4+FLs Represented by 10Re+R7.
（２）次に■。を印加すると、第３図を参照し、Ｒ１゜
Ｒｔ ＊ Ｒｓ ＋ Ｒ４＋丁ｔ＋、Ｒ６，几、が等し
い値Ｒとし。(2) Next ■. Referring to FIG. 3, when R1°Rt*Rs+R4+T+, R6, is set to the same value R.
回路を流れる電流を１としたとき、■−■間の電位差は
５１Ｒであり、■−■間の電位差は３ＩＲとなる。■−
■間のＭＯＳ）ランジスタと■−■間のＭＯＳ）ランジ
スタがオンの状態となり、Ｒ６゜Ｒｏは有限の値を持つ
。■−■間の電位差が■−■間の電位差より大きいので
■−■間に流れる電流は、■−■間に流れる電流より太
きいつつまり、Ｒ８はＲｏより小さくなる。結果として
抵抗値は。When the current flowing through the circuit is 1, the potential difference between ■ and ■ is 51R, and the potential difference between ■ and ■ is 3IR. ■−
The MOS) transistor between (2) and the MOS) transistor between (2) and (2) are turned on, and R6°Ro has a finite value. Since the potential difference between ■ and ■ is larger than the potential difference between ■ and ■, the current flowing between ■ and ■ is thicker than the current flowing between ■ and ■, which means that R8 becomes smaller than Ro. As a result, the resistance value is.
第３図においてＭＯＳトランジスタＱ、、Ｑ２をＲ，、
Ｒ１＋でおきかえた回路の全抵抗値となる。In FIG. 3, MOS transistors Q, , Q2 are R, ,
This is the total resistance value of the circuit replaced with R1+.
Ｒ３１Ｖｏをさらに大きくするとＲｓ 、Ｒｏが（２）
のＲｓ 、ＲｏＯ値より小さくなり１回路全体の抵抗は
、（２１時の回路の全抵抗より小さな値となる。実際に
は■ＤＤとＧＮＤとの間には、無数のＭＯＳ）ランジス
タが形成されていると考えられ、ｖｏへの印加電圧によ
り、これらのＭＯＳ）ランジスタにチャネルを発生させ
電流を流すことにより抵抗値を任意に制御ｌａｌ］する
ことができる。If R31Vo is further increased, Rs and Ro become (2)
Rs of , becomes smaller than the RoO value, and the resistance of the entire circuit becomes a value smaller than the total resistance of the circuit at 21:00.In reality, countless MOS transistors are formed between DD and GND. The resistance value can be arbitrarily controlled by generating a channel in these MOS transistors and flowing a current by applying a voltage to vo.
以上実施例で述べた本発明によれば、拡散抵抗とＭＯ８
ｉ子とを一体に組合せることによって１紫子でＶＣＲを
構成できるから、従来の抵抗、トランジスタを組合せた
複雑な回路に比して単純化でき、チップ面積も縮小化で
き、低価格で提供できる効果を有する。According to the present invention described in the embodiments above, the diffusion resistance and the MO8
Since a VCR can be configured with one zigzag by combining it with an i-chip, it can be simplified compared to the conventional complex circuit that combines resistors and transistors, the chip area can be reduced, and it can be provided at a low price. It has the effect of
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが１本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。たとえば、拡散抵抗の
形状なコ字状とする以外に第４図に示すようにループ状
に形成してもよい。Although the invention made by the present inventor has been specifically described above based on examples, it goes without saying that the present invention is not limited to the above-mentioned examples, and can be modified in various ways without departing from the gist thereof. Nor. For example, instead of forming the diffused resistor in a U-shape, it may be formed in a loop shape as shown in FIG.
本発明はＶＣＨを使用する半導体装置に適用することが
でき、特にバイポ〜うＭＯＳプロセスにより製造するＩ
Ｃ，ＬＳＩにそのま工に応用することができる。The present invention can be applied to semiconductor devices using VCH, and especially I
It can be applied to C, LSI as is.
第１図は本発明による一実施例であって、半導体拡散層
とＭＯ３素子とを一体に組合せたＶＣＨの平面図。
第２図は第１図におけるＡ−Ａ’視断面図。
第３図はその等価回路図である。
第４図は本発明による他の一実施例であるＶＣＲの平面
図である。
１・・・ｐ型Ｓｉ基体、２・・・ｎ型拡散抵抗、３ａ、
３ｂ・・・電極、４・・・ゲート、５・・・絶縁膜。
第 １ 図
Ａコ
、ｑ／−
第 ２ 図
第 ３ 図
第 ４ 図FIG. 1 is a plan view of a VCH according to an embodiment of the present invention, in which a semiconductor diffusion layer and an MO3 element are integrally combined. FIG. 2 is a sectional view taken along line AA' in FIG. FIG. 3 is its equivalent circuit diagram. FIG. 4 is a plan view of a VCR which is another embodiment of the present invention. 1...p-type Si substrate, 2...n-type diffused resistance, 3a,
3b...electrode, 4...gate, 5...insulating film. Figure 1 A, q/- Figure 2 Figure 3 Figure 4
Claims (1)
部で連続する拡散抵抗が形成され、対向する拡散抵抗間
の半導体表面に絶縁膜を介してゲートが形成され、上記
ゲートへの電圧印加によって拡散抵抗を制ａＩＩ＋する
ことを特徴とする半導体電圧制御抵抗装置。1. Diffused resistors are formed on one main surface of a semiconductor substrate, parallel to each other in some parts and continuous in other parts, and a gate is formed on the semiconductor surface between the opposing diffused resistors with an insulating film interposed therebetween. A semiconductor voltage-controlled resistance device characterized in that diffusion resistance is controlled by applying a voltage to aII+.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12604083A JPS6018949A (en) | 1983-07-13 | 1983-07-13 | Semiconductor voltage control resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12604083A JPS6018949A (en) | 1983-07-13 | 1983-07-13 | Semiconductor voltage control resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6018949A true JPS6018949A (en) | 1985-01-31 |
Family
ID=14925171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12604083A Pending JPS6018949A (en) | 1983-07-13 | 1983-07-13 | Semiconductor voltage control resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6018949A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003026194A (en) * | 2001-07-09 | 2003-01-29 | Kau Pack Kk | Packaging bag with string and manufacturing method therefor |
-
1983
- 1983-07-13 JP JP12604083A patent/JPS6018949A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003026194A (en) * | 2001-07-09 | 2003-01-29 | Kau Pack Kk | Packaging bag with string and manufacturing method therefor |
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