JPS6016515B2 - Low temperature sputtering equipment - Google Patents
Low temperature sputtering equipmentInfo
- Publication number
- JPS6016515B2 JPS6016515B2 JP14068178A JP14068178A JPS6016515B2 JP S6016515 B2 JPS6016515 B2 JP S6016515B2 JP 14068178 A JP14068178 A JP 14068178A JP 14068178 A JP14068178 A JP 14068178A JP S6016515 B2 JPS6016515 B2 JP S6016515B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- base product
- magnetic field
- temperature sputtering
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
この発明は、低温スパッタリング装置、特にくぼみや孔
等の竪長部をもつ、即ち死角部位をもつ基体製品にも均
一な金属薄膜を形成できる低温スパッタリング装置に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a low-temperature sputtering apparatus, and particularly to a low-temperature sputtering apparatus capable of forming a uniform metal thin film even on a substrate product having vertical parts such as depressions and holes, that is, having blind spots.
ここで、低温スパッタリング装置とは、低圧不活性ガス
中で、ターゲットに直流高電圧又は高周波電圧をかけて
放電させ、放電で生じたプラズマ中の腸イオン（不活性
ガスィオン）がターゲットに射突することにより、ター
ゲットから飛び出した金属原子、放電電極間外に配設さ
れた基体製品受台部に戦遣されたを基体製品に付着させ
て金属薄膜を形成する機構を有するスパッタリング装置
において、ターゲット側に磁石を取り付け、ターゲット
周辺に磁場を形成し、該磁場によりプラズマを閉じ込め
ることにより放電領域を制御し、放電によって電離した
電子が流入し、基体製品に衝突しないようにして基体製
品の温度上昇を防止した装置をいう。Here, a low-temperature sputtering device is a low-pressure inert gas in which a DC high voltage or high-frequency voltage is applied to a target to discharge it, and intestinal ions (inert gas ions) in the plasma generated by the discharge impinge on the target. In a sputtering device that has a mechanism for forming a thin metal film by attaching metal atoms ejected from the target to a base product pedestal disposed outside between the discharge electrodes and forming a metal thin film, the target side A magnet is attached to the target to form a magnetic field around the target, and the plasma is confined by the magnetic field to control the discharge area, preventing electrons ionized by the discharge from flowing in and colliding with the base product, thereby reducing the temperature rise of the base product. A device that prevents
この低温スパッタリングは、真空黍着では不可能な、高
融点金属、合金等の金属薄膜形成が合成樹脂製品に可能
であり、また、金属薄膜と基体製品との密着性も真空燕
着に比して良好である。This low-temperature sputtering makes it possible to form metal thin films of high-melting point metals, alloys, etc. on synthetic resin products, which is impossible with vacuum deposition, and also improves the adhesion between the metal thin film and the base product compared to vacuum deposition. It is in good condition.
このため、ＡＢＳ等の合成樹脂製基体に、クロム、クロ
ム合金等で低温スパッタリングにより金属薄膜を形成し
た、ラジェータグリル、ヘッドランプリム等の自動車部
品が開発されはじめた。しかし、この低温スパッタＩＪ
ングにおいて、基体製品にくぼみや孔等の竪長部、即ち
死角部位がある場合、ターゲットからたたき出された金
属原子は、直進的に基体製品に向ってくるので、死角部
位へは付着しにくく、均一に金属薄膜が形成されないお
それがあった。この発明は、上記にかんがみて、死角部
位をもつ基体製品にも均一な金属薄膜が形成できる低温
スパッタリング菱薄を提供することを目的とする。For this reason, automobile parts such as radiator grilles and headlamp rims have begun to be developed in which a thin metal film of chromium, chromium alloy, etc. is formed by low-temperature sputtering on a synthetic resin substrate such as ABS. However, this low-temperature sputtering IJ
When the base product has vertical parts such as depressions and holes, that is, blind spots, the metal atoms ejected from the target will go straight toward the base product, making it difficult for them to adhere to the blind spots. , there was a risk that the metal thin film would not be formed uniformly. In view of the above, an object of the present invention is to provide a low-temperature sputtering diamond thin film that can form a uniform metal thin film even on a substrate product having a blind spot.
この発明の要旨は、上記低温スパッタリング装置におい
て、基体製品受台に磁場発生部材を取り付け、基体製品
の死角部位に所要強さ以上の磁場を形成するようにした
低温スパッタリング装置にある。The gist of the present invention resides in the low-temperature sputtering apparatus described above, in which a magnetic field generating member is attached to the base product holder to form a magnetic field of a required strength or higher in the blind area of the base product.
以下、この発明の一実施例を、図例に基づいて説明する
。Hereinafter, one embodiment of the present invention will be described based on illustrated examples.
真空槽１には、真空ポンプ（図示せず）と蓮適する吸引
パイプ２、及び、アルゴンガスボンベ３と蓮通する不活
性ガス供給パイプ４が取り付けられている。The vacuum chamber 1 is equipped with a suction pipe 2 connected to a vacuum pump (not shown), and an inert gas supply pipe 4 connected to an argon gas cylinder 3.
真空槽１内には、上方部に陰極を包被するターゲット６
、中間部にターゲット６と対向してアノード７、下方部
（放電電極間外）に基体製品受台８が、それぞれ配設さ
れている。Inside the vacuum chamber 1, there is a target 6 that covers the cathode in the upper part.
, an anode 7 is disposed in the middle part facing the target 6, and a base product pedestal 8 is disposed in the lower part (outside between the discharge electrodes).
ターゲット６及びアノード７は、それぞれ直流高圧電源
９の陰極側と陽極側と連結されている。また、ターゲッ
ト６の上部には磁石１０が取り付けられ、ターゲット６
の表面から出て表面に入る閉じられた形の磁場が形成さ
れている。この従来の、直流式スパッタリング装置にお
いて、基体製品受台８の下面に磁石、ソレノィド等の磁
場発生部材１１を取り付ける。このとき、磁場発生部材
１１の強さは、基体製品受台８上に戦置された基体製品
１２上の死角部位、即ち奥まった部分に、所要以上（１
０〜２００ガウス）の磁場を発生さしうるものとする。
また、磁場発生部材１１は、基体製品受台８の下面に限
らず、死角部位に対応して上面又は側方であってもよく
、さらに、受台８自身を磁場発生部材としてもよい。次
に、上記スパッタリング装置の使用態様を説明する。The target 6 and the anode 7 are connected to the cathode side and the anode side of a DC high voltage power supply 9, respectively. Further, a magnet 10 is attached to the upper part of the target 6, and a magnet 10 is attached to the upper part of the target 6.
A closed-form magnetic field is formed that exits from and enters the surface of the . In this conventional DC sputtering apparatus, a magnetic field generating member 11 such as a magnet or a solenoid is attached to the lower surface of the base product holder 8 . At this time, the strength of the magnetic field generating member 11 is such that the strength of the magnetic field generating member 11 is greater than required (1
It is assumed that a magnetic field of 0 to 200 Gauss can be generated.
Further, the magnetic field generating member 11 is not limited to the lower surface of the base product holder 8, but may be placed on the upper surface or the side corresponding to a blind spot.Furthermore, the holder 8 itself may be used as the magnetic field generating member. Next, how the sputtering apparatus is used will be explained.
まず、基体製品受台８に、孔（死角部位）１２ａを多数
有する基体製品１２を軟遣し、真空槽１内を真空ポンプ
で引き１０‐４〜１０‐６Ｔｏｍにまで減圧する。次に
、アルゴンガス（不活性ガス）を真空槽１内に導入し１
０‐３〜１０‐４Ｔｏｎ程度とし、この状態で、ターゲ
ット６とアノード７間の電圧を数十Ｖ以上にすると、放
電が始まり、５００Ｖ程度で所望のスパッタリング電圧
となる。このとき、夕−ゲット６の周辺にはターゲット
表面から出て表面に入る閉じられた形の磁場が磁石１０
で形成されているので、磁場と電界が直交する部分には
放電によって、電離した電子がマグネトロン運動を行な
い、密度の高いプラズマを発生する。このプラズマは磁
場によりターゲット周辺に閉じ込められ、直接基体製品
１２に流入衝突しないので、基体製品１２が昇溢するの
が防止される。この発生したプラズマ中の賜イオン（Ａ
ｒ十）はターゲット６面に射突し、クロム、クロム合金
等のターゲット金属が飛び出し、基体製品１２上に飛ん
でくる。このとき、飛び出した金属は、基体製品１２に
向ってほぼ直進的に飛んでくるが、本来なら付着し１こ
くい孔１２ａの集まった箇所も、磁場が形成されている
ので、金属原子は磁場の影響を受けて回折し、池部と同
様の厚さの金属薄膜が形成できる。なお、ここでは直流
スパッタリング装置を例に採ったが、高周波スパッタリ
ング装置でも同様である。First, the base product 12 having a large number of holes (dead spots) 12a is placed on the base product holder 8, and the pressure inside the vacuum chamber 1 is reduced to 10-4 to 10-6 Tom using a vacuum pump. Next, argon gas (inert gas) is introduced into the vacuum chamber 1.
The voltage is about 0-3 to 10-4 Ton, and when the voltage between the target 6 and the anode 7 is increased to several tens of volts or more in this state, discharge starts and the desired sputtering voltage is reached at about 500V. At this time, a closed magnetic field exits from the target surface and enters the target surface around the magnet 10.
Therefore, in the area where the magnetic field and electric field are perpendicular to each other, ionized electrons perform magnetron motion due to discharge, generating a high-density plasma. This plasma is confined around the target by the magnetic field and does not directly flow into and collide with the base product 12, thereby preventing the base product 12 from overflowing. The gift ions (A) in this generated plasma
r1) hits the target 6 surface, and target metals such as chromium and chromium alloy fly out and fly onto the base product 12. At this time, the ejected metal flies almost straight toward the base product 12, but since a magnetic field is also formed in the area where the one-thick holes 12a would normally be attached, the metal atoms are It is diffracted under the influence of , and a thin metal film with the same thickness as the pond can be formed. Note that although a DC sputtering device is taken as an example here, the same applies to a high frequency sputtering device.
また基体製品を回転させたり、基体製品受台部に設けた
磁石を移動させることにより、金属原子のつきまわりを
より好ましい状態に改善することができる。Furthermore, by rotating the base product or moving the magnet provided on the base product holder, the throwing of metal atoms can be improved to a more favorable state.
この発明の低温スパッタリング装置は、上記のような構
成なので、低温スパッタリングにおいて、基体製品に死
角部位があっても、均一な金属薄膜を形成できる。Since the low-temperature sputtering apparatus of the present invention has the above-described configuration, a uniform metal thin film can be formed during low-temperature sputtering even if there is a blind spot in the base product.
また、この発明の装置によれば、耐摩耗性を要求される
部位に、強い磁場を形成して、該部位の金属薄膜を厚く
することもできる。なお、第２図に示すような、ＡＢＳ
樹脂製の基体製品１２Ａに、本発明の装置及び従来の装
置を用いて下記条件にクロムをスパッタリングした結果
を第１表に示す。Further, according to the device of the present invention, a strong magnetic field can be formed in a region where wear resistance is required, thereby making it possible to thicken the metal thin film in that region. In addition, as shown in Fig. 2, ABS
Table 1 shows the results of sputtering chromium onto the resin base product 12A using the apparatus of the present invention and the conventional apparatus under the following conditions.
基本製品…格子厚３肋、空隙幅２仇舷、格子深さ５Ｑ吻
。Basic product: lattice thickness 3 ribs, gap width 2 sides, lattice depth 5Q.
スパッタリング時の雰囲気・・・アルゴンガス５×ｌｏ
‐４Ｔｏｎ磁場発生部村・・・棒状磁石（５弧）２４本
、基体製品の上面が約８０ガウスになるようにセツト。Atmosphere during sputtering: Argon gas 5×lo
-4Ton magnetic field generator village: 24 bar-shaped magnets (5 arcs), set so that the upper surface of the base product is approximately 80 Gauss.
スパッタリング装置・・・１．８分 第１表Sputtering equipment...1.8 minutes Table 1
第１図はこの発明の装置の概略断面図、第２図は効果確
認試験に使用した基体製品の斜視図である。
１．．．真空槽、６・・・ターゲット、７・・・アノー
ド、８・・・基体製品受台、９・・・直流高圧電源、１
１・・・磁場発生部材、１２，１２Ａ・・・基体製品。
簾ｌ図第２図FIG. 1 is a schematic cross-sectional view of the apparatus of the present invention, and FIG. 2 is a perspective view of the base product used in the effectiveness confirmation test. 1. ．． ．． Vacuum chamber, 6... Target, 7... Anode, 8... Base product pedestal, 9... DC high voltage power supply, 1
1... Magnetic field generating member, 12, 12A... Base product. Diagram 2
Claims (1)
高周波電圧をかけて放電させ、該放電で生じたプラズマ
中の陽イオンがターゲツトに射突して該ターゲツトから
金属原子が放出され、該金属原子が、放電電極間外に配
設された基体製品受台部に載置された基体製品に付着し
て金属薄膜が形成される機構を有し、さらに、前記プラ
ズマが、前記ターゲツトに設けられ、該ターゲツトの表
面から出て表面に入る閉じられた形の磁場で制御され基
体製品に直接衝突しないようにした低温スパツタリング
装置において、前記基体製品受台部に磁場発生部材を取
り付け、基体製品の死角部位に所要強さ以上の磁場を形
成するようにしたことを特徴とする低温スパツタリング
装置。1 In a low-pressure inert gas, a DC high voltage or high-frequency voltage is applied to the target to cause a discharge, and the positive ions in the plasma generated by the discharge impinge on the target and metal atoms are released from the target. It has a mechanism in which atoms adhere to a base product placed on a base product pedestal disposed outside between the discharge electrodes to form a metal thin film, and further, the plasma is provided on the target. , in a low temperature sputtering device that is controlled by a closed magnetic field that exits from and enters the surface of the target so as not to directly collide with the base product, a magnetic field generating member is attached to the base product holder, and a magnetic field generating member is attached to the base product holder. A low-temperature sputtering device characterized by forming a magnetic field of a required strength or higher in a blind area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14068178A JPS6016515B2 (en) | 1978-11-15 | 1978-11-15 | Low temperature sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14068178A JPS6016515B2 (en) | 1978-11-15 | 1978-11-15 | Low temperature sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5569257A JPS5569257A (en) | 1980-05-24 |
| JPS6016515B2 true JPS6016515B2 (en) | 1985-04-25 |
Family
ID=15274274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14068178A Expired JPS6016515B2 (en) | 1978-11-15 | 1978-11-15 | Low temperature sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016515B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100381050C (en) * | 2004-09-27 | 2008-04-16 | 大日本除虫菊株式会社 | Indoor mite dispeller |
| CN103814153A (en) * | 2011-09-22 | 2014-05-21 | 学校法人芝浦工业大学 | Thin-film formation method, thin-film formation device, object to be treated having coating film formed thereon, die and tool |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0084971B2 (en) * | 1982-01-26 | 1990-07-18 | Materials Research Corporation | A method for reactive bias sputtering |
| US4581118A (en) * | 1983-01-26 | 1986-04-08 | Materials Research Corporation | Shaped field magnetron electrode |
| JP4682371B2 (en) * | 2004-05-24 | 2011-05-11 | 独立行政法人物質・材料研究機構 | Single power source sputtering apparatus comprising an anode with magnetic field control |
-
1978
- 1978-11-15 JP JP14068178A patent/JPS6016515B2/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100381050C (en) * | 2004-09-27 | 2008-04-16 | 大日本除虫菊株式会社 | Indoor mite dispeller |
| CN103814153A (en) * | 2011-09-22 | 2014-05-21 | 学校法人芝浦工业大学 | Thin-film formation method, thin-film formation device, object to be treated having coating film formed thereon, die and tool |
| CN103814153B (en) * | 2011-09-22 | 2015-11-25 | 学校法人芝浦工业大学 | Film forming method, film forming device, the treated object being formed with overlay film, mould and instrument |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5569257A (en) | 1980-05-24 |
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