JPS60161684A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS60161684A JPS60161684A JP59018139A JP1813984A JPS60161684A JP S60161684 A JPS60161684 A JP S60161684A JP 59018139 A JP59018139 A JP 59018139A JP 1813984 A JP1813984 A JP 1813984A JP S60161684 A JPS60161684 A JP S60161684A
- Authority
- JP
- Japan
- Prior art keywords
- lens
- light emitting
- projections
- substrate
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000853 adhesive Substances 0.000 claims abstract description 11
- 230000001070 adhesive effect Effects 0.000 claims abstract description 11
- 230000008878 coupling Effects 0.000 abstract description 12
- 238000010168 coupling process Methods 0.000 abstract description 12
- 238000005859 coupling reaction Methods 0.000 abstract description 12
- 239000013307 optical fiber Substances 0.000 abstract description 10
- 239000012790 adhesive layer Substances 0.000 abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
【発明の詳細な説明】 ゛ （ア） 技術分野 この発明は、半導体発光素子の構造に関する。[Detailed description of the invention] ゛ (A) Technical field The present invention relates to the structure of a semiconductor light emitting device.
半導体発光素子は、ＧａＡｓ系、ＧａＰ系、ＩｎＰ系の
ものがある。また、発光ダイオード（ＬＥＤ）とレーザ
ダイオード（ＬＤ）がある。There are GaAs-based, GaP-based, and InP-based semiconductor light emitting devices. There are also light emitting diodes (LEDs) and laser diodes (LDs).
これらの発光素子は、光通信、光計測の光源として用い
られることが多い。このような場合、光ファイバの中へ
効率よく、光を入射させなければならない。These light emitting elements are often used as light sources for optical communication and optical measurement. In such cases, it is necessary to efficiently introduce light into the optical fiber.
（イ） 従来技術とその問題点
従来、半導体発光素子、特に発光ダイオードの・光を、
光フアイバ端面に入射させるため、球状レンズ、又は半
球状レンズを発光領域上に装荷して、光の指向性を高め
、大部分の光を光ファイバへ入射させるようにしている
。(b) Conventional technology and its problems Conventionally, the light of semiconductor light emitting devices, especially light emitting diodes,
In order to make the light incident on the end face of the optical fiber, a spherical lens or a hemispherical lens is loaded on the light emitting region to increase the directivity of the light and make most of the light incident on the optical fiber.
従来の、レンズ装荷構造は、平坦なＬＥＤ基板上へその
まま、又はＬＥＤ基板に嵌合凹部を設けてそ（７）上へ
レンズを接着１〜ていた。In the conventional lens loading structure, a lens is attached directly onto a flat LED board, or after a fitting recess is provided on the LED board (7).
第７図〜第１１図は従来のレンズ装荷構造を説明する。7 to 11 illustrate a conventional lens loading structure.
第７図に示すものは、ＬＥＤ基板１の平坦な面の上に、
直接、球レンズ２を接着剤４によって固定したものであ
る。発光領域７から生じた光は拡散する光であ込が、球
しンそ２によって光路が中央二寄シに曲げられ、収束光
となる。In the case shown in FIG. 7, on the flat surface of the LED board 1,
A ball lens 2 is directly fixed with an adhesive 4. The light emitted from the light emitting region 7 is diffused and concentrated, but the optical path is bent toward the center by the bulb 2 and becomes convergent light.
第８図に示すものは、球レンズ２のかわりに半球レンズ
３を、平坦なＬＥＤ基板１の上に接着したものである。In the device shown in FIG. 8, a hemispherical lens 3 instead of the spherical lens 2 is bonded onto a flat LED substrate 1.
これらは、簡単な構造であるが、狭い発光領域７の中心
とレンズ２．３の中心とを面に対して直角な軸上に並ぶ
よう位置合わせしなければならない。軸カ合っていない
と、レンズから出た光は、基板１の面に対−して直角で
はなく、斜めに進み、光ファイバとの結合効率が低いも
のになる。ところが、発光領域の中心は、外観だけから
は分りに＜＜、位置合わせが難しい。なんの突起物もな
いからである。Although these have a simple structure, they must be aligned so that the center of the narrow light emitting region 7 and the center of the lens 2.3 are aligned on an axis perpendicular to the plane. If the axes are not aligned, the light emitted from the lens will travel obliquely rather than at right angles to the surface of the substrate 1, resulting in low coupling efficiency with the optical fiber. However, it is difficult to align the center of the light-emitting region, as it is obvious from just the appearance. This is because there are no protrusions.
そこで、発光領域７に合致するよう、予め嵌合四部６を
設けておく、という構成が発明された（特願昭５１−７
８７６４、特公ＵＩｅ５７−２９０６７、三便電機■）
。第９図〜第１１図に示している。Therefore, a structure was invented in which the four fitting parts 6 were provided in advance so as to match the light emitting area 7 (Japanese Patent Application No. 1986-7
8764, Special public UIe57-29067, Sanbin Electric ■)
. It is shown in FIGS. 9 to 11.
球レンズを装荷したものが、第９図、第１０図の例でｂ
る。ＬＥＤ基板１の上に、発光領域７と中心が合致する
よう円形の嵌合凹部６をフォトリングラフイーによって
エツチングして形成【−ておく。In the example shown in Figures 9 and 10, the one loaded with a ball lens is b.
Ru. A circular fitting recess 6 is formed on the LED substrate 1 by etching using photophosphorography so that its center coincides with the light emitting region 7.
球レンズ２を（支）合凹部６へ嵌まシこむように置いて
接着する。The ball lens 2 is placed so as to fit into the (support) matching recess 6 and bonded.
第１１図は半球状レンズ３を用いた例を示す。FIG. 11 shows an example using a hemispherical lens 3.
いずれにしても、レンズ２．３の位置合わせは精密に行
うことができる。In any case, the lens 2.3 can be precisely aligned.
しかし、反面、嵌合四部６にたまった接着剤４は外部に
出にくい。このため、ＬＥＤ基板１とレンズ２．３が接
触せず、中間に接着剤層が形成されることになる。さら
に、接着剤層の厚みがバラつくから、光線５の収束点が
異なってくる。特に第１１図に示す半球状レンズ３の場
合に、接着剤層の厚みのバラつきが著しくなる。このた
めは、光ファイバとの結合パワーがばらついて、歩留り
を下げる原因になっている。However, on the other hand, the adhesive 4 accumulated in the four fitting parts 6 is difficult to come out. Therefore, the LED substrate 1 and the lens 2.3 do not come into contact with each other, and an adhesive layer is formed in between. Furthermore, since the thickness of the adhesive layer varies, the convergence point of the light ray 5 differs. Particularly in the case of the hemispherical lens 3 shown in FIG. 11, variations in the thickness of the adhesive layer become significant. For this reason, the coupling power with the optical fiber varies, causing a decrease in yield.
接着剤の粘度を下げれば良いわけであるが、接着の安定
性、速さから、あまシ低粘度の接着剤は使用できない。It would be fine to lower the viscosity of the adhesive, but due to the stability and speed of adhesion, low-viscosity adhesives cannot be used.
むしろ、一般に、基板１とレンズを接着するのはシリコ
ン樹脂など、粘度の高Ｃものを用いる事が多い。Rather, in general, a material with high viscosity C, such as silicone resin, is often used to bond the substrate 1 and the lens.
（つ） 目 的
レンズの位置合せが容易で、しかも接着剤層が薄く、し
かも厚みのバラつきの少ないレンズの装荷構造を与え、
光ファイバとの結合効率の高い半導体発光素子を提供す
る。(1) Purpose: To provide a lens loading structure that allows easy lens alignment, has a thin adhesive layer, and has less variation in thickness;
A semiconductor light emitting device having high coupling efficiency with an optical fiber is provided.
（１） 発明の構成
ＬＥＤ基板上に、互に離隔した３つ以上の突起物を形成
し、突起物によってレンズの位置を定めて、接着する。(1) Configuration of the Invention Three or more protrusions spaced apart from each other are formed on the LED board, and the lens is positioned by the protrusions and bonded.
もちろん、突起物の中心を、発光領域。Of course, the center of the protrusion is the light emitting area.
の中心に、一致させる。Match the center of the.
第１図は球し゛ンズを用いた本発明の一例を示す斜視図
、第２図は断面図である。FIG. 1 is a perspective view showing an example of the present invention using a spherical lens, and FIG. 2 is a sectional view.
ここでは、４個の突起物９を、その中心が発光領域７の
中心に一致するよう設けている。この突起物９は直方体
形状である。Here, four protrusions 9 are provided so that their centers coincide with the center of the light emitting region 7. This protrusion 9 has a rectangular parallelepiped shape.
突起物９はレンズ２と接触［２、レンズ２はＬＥＤ基板
１に接触するようにする。The protrusion 9 is brought into contact with the lens 2 [2, the lens 2 is brought into contact with the LED board 1].
このためには、次のように寸法を決める。For this purpose, determine the dimensions as follows.
球レンズ２の中心をＯ１発光ｆｆ［７の中心をＭとする
。ＬＥＤ基板１の上面Ｓと、直線ＯＭの交点をＡとする
。位置合わせをしているので、ＯＭは、面Ｓに直角であ
る。ＯＡは、Ａ点に立てだ面Ｓの法線である。Let the center of the spherical lens 2 be the center of the O1 light emission ff [7]. Let A be the intersection of the upper surface S of the LED board 1 and the straight line OM. Due to alignment, OM is perpendicular to plane S. OA is the normal line of the erected surface S to the point A.
突起物９の中心側の上辺の中心点をＢ点とすると、Ｂ点
に於て球レンズ２が接触すべきである。Assuming that the center point of the upper side of the protrusion 9 on the center side is a point B, the ball lens 2 should come into contact with the point B.
突起物の高さをｈ、球レンズ２の半径ｆ、（ｒ、Ａ点か
らの突起物９の中心側の辺までの距１！−ｅ（ｄ／２）
とする。直線ＯＭの円Ｏとの反対側の交点？、Ｃとし、
直径ＡＣへＢ点から下した垂線の足をＤとする。 Ａ
Ｄ ＝ ｈ 、ＣＤ ＝ ２ ｒ −ｈ 、Ｂ Ｄ ＝
ｄ／２ テあり、かつ
ＡＤ、ＡＣ＝ＢＤ２ （１＋
であるから、 。The height of the protrusion is h, the radius of the spherical lens 2 is f, (r, the distance from point A to the center side of the protrusion 9 is 1!-e(d/2)
shall be. The intersection of the straight line OM and the circle O on the opposite side? , C,
Let D be the foot of the perpendicular line drawn from point B to diameter AC. A
D = h, CD = 2r - h, B D =
d/2 There is TE, and AD, AC=BD2 (1+, so .
である。It is.
第１図から分るように、突起物９、・−の聞には、広い
隙間があって、接着剤４は、レンズ２をＬＥＤ基板１へ
押しつけると、隙間から四周へ流れ出る。As can be seen from FIG. 1, there are wide gaps between the protrusions 9, .
このため、レンズはＡ点でＬＥＤ基板１に接触できる。Therefore, the lens can contact the LED board 1 at point A.
、Ａ点以外では、レンズ２と基板１の間に瞭盾剤４が介
在するが、従来の嵌合凹部を用いるものに比して、接着
層は薄い。, except for point A, the shielding agent 4 is interposed between the lens 2 and the substrate 1, but the adhesive layer is thinner than in the conventional case using a fitting recess.
第３図、第４図は半球状レンズの場合を示している。突
起物９の全てにレンズ３が接触して安定な位置が決まる
ようにしである。3 and 4 show the case of a hemispherical lens. The lens 3 is designed to come into contact with all of the protrusions 9 to determine a stable position.
断面を見れば、第１１図の構成と似ている。しかし、突
起物９が嵌合四部のような閉じられた空間を形成するの
ではない。斜視図に見るように突起物９０間には、間隙
がある。このため、接着剤４は、シリコン樹脂のように
粘度の高いものであっても、側方にはみ出るから、半球
レンズ３０大国面１０は、ＬＥＤ基板１の上面に密着す
ることができる。If you look at the cross section, it looks similar to the configuration shown in FIG. 11. However, the protrusions 9 do not form a closed space like the four fitting parts. As seen in the perspective view, there are gaps between the protrusions 90. Therefore, even if the adhesive 4 is of high viscosity such as silicone resin, it protrudes to the side, so that the hemispherical lens 30 and the main surface 10 can be in close contact with the upper surface of the LED substrate 1.
突起物の中心Ａが、半球レンズ３の中心に一致しており
、発光領ＪＩＪｉ７の中心Ｍと、基板１の上下方向で合
致している。The center A of the protrusion coincides with the center of the hemispherical lens 3, and coincides with the center M of the light emitting region JIJi7 in the vertical direction of the substrate 1.
突起物の高さは、球レンズの場合のような厳密な制限が
ない。高さば、５μＩｎ以上で、レンズ３の高さ以下で
あれば良い。The height of the protrusion is not subject to strict limitations as in the case of a spherical lens. The height may be 5 μIn or more and not more than the height of the lens 3.
突起物９の個数は、３個以上であればよく、中心の位置
が確定すればよいのである。The number of protrusions 9 may be three or more, and the position of the center may be determined.
第５図は突起物９の個数が３個である例を示す斜視図で
ある。FIG. 5 is a perspective view showing an example in which the number of protrusions 9 is three.
逆に、突起物の数は５．６、・・・など５以上でも差支
えない。突起物の間に隙間があり、しかも、内側の端辺
が球レンズ、半球レンズに接触するようになっていれば
良い。Conversely, the number of protrusions may be 5 or more, such as 5.6, . . . . It is sufficient that there is a gap between the protrusions, and that the inner edges are in contact with the spherical lens or hemispherical lens.
（オ） 突起物の形成方法
（１１ＬＥＤ基板の上へ、ウェハプロセスに於て、所定
の位置に、金などの金属を厚くメッキして突起物を形成
する。(e) Method for forming protrusions (11) Protrusions are formed by thickly plating a metal such as gold at predetermined positions on the LED substrate in a wafer process.
この場合は、基板と突起物は異なる物質である。In this case, the substrate and the protrusions are different materials.
（２） エツチングにより基板の一部を除去して突起物
を形成する。(2) Part of the substrate is removed by etching to form protrusions.
ＧａＡｓ基板の場合は、Ｈ３ＰＯ４系エツチング液でエ
ツチングし、ホトリソグラフィ技術を用いて突起物を形
成する。In the case of a GaAs substrate, it is etched with an H3PO4-based etching solution, and protrusions are formed using photolithography.
ＩｎＰ基板の場合は、ＨＣ１系エツチング液で、同様に
突起物を形成できる。In the case of an InP substrate, protrusions can be similarly formed using an HC1-based etching solution.
（力） 効 果
（１） レンズが、球状レンズ、半球状レンズのいずれ
の場合でも、発光領域の中心Ｍ部上にレンズの中心部を
取ね合わせる位置合わせが容易である。(Force) Effects (1) Regardless of whether the lens is a spherical lens or a hemispherical lens, it is easy to align the center of the lens over the center M of the light emitting region.
レンズを突起物に接触させた状ｆ島で固定するためであ
る。This is to fix the lens with the f-island in contact with the protrusion.
（２） 球状レンズ、半球状レンズどちらの場合でも、
レンズとＬＥＤ基板の間の接着剤層の厚みは、嵌合四部
構造のものに比して薄く、ばらつきも少い。(2) Regardless of whether it is a spherical lens or a hemispherical lens,
The thickness of the adhesive layer between the lens and the LED substrate is thinner and less variable than in a four-part structure.
レンズを固定するものが突起物のみであり、これらには
隙間があって、接着剤が、レンズ下部から外部へ極めて
簡単にはみ出すことができるからである。This is because the only thing that fixes the lens is the protrusions, and there are gaps between them, so that the adhesive can very easily leak out from the bottom of the lens.
このため、光ファイバへの高い結合効率が、再現性良く
実現される。Therefore, high coupling efficiency to the optical fiber can be achieved with good reproducibility.
第６図は本発明の発光素子（第１図、第２図に示す球レ
ンズを用いるもの）と、従来例の発光素子（第７図に示
す球レンズを用いるもの）の、光＝７アイバとの結合効
率Ｃ％）の頻度分布を示すグラフである。横軸は結合効
率で、縦軸は、そのような結合効率の素子が製造される
頻度を相対値で示している。FIG. 6 shows the light-emitting device of the present invention (using the ball lens shown in FIGS. 1 and 2) and the conventional light-emitting device (using the ball lens shown in FIG. It is a graph which shows the frequency distribution of the coupling efficiency (C%) with. The horizontal axis represents the coupling efficiency, and the vertical axis represents the relative frequency with which elements with such a coupling efficiency are manufactured.
本発明のものは、結合効率の頻度のピークが１５．５％
にあり、従来例のものは、１４％にある。また、ピーク
を与える効率の頻度が、本発明の方が２倍近く大きい。In the case of the present invention, the frequency peak of binding efficiency is 15.5%.
In the conventional example, it is 14%. Furthermore, the frequency of efficiency that gives a peak is nearly twice as high in the present invention.
つまり、バラつきが少い。従っで、例えば、結合効率が
１４％以上のものを合格品とすれば、本発明のものの方
が歩留りが極めてよい、という事が分る。In other words, there is little variation. Therefore, for example, if a product with a coupling efficiency of 14% or more is considered to be an acceptable product, it can be seen that the product of the present invention has an extremely high yield.
（キ） 用 途
本発明は、球状レンズ、半球状レンズを装荷する半導体
発光素子に広く適用できる。(g) Applications The present invention can be widely applied to semiconductor light emitting devices loaded with spherical lenses and hemispherical lenses.
＋１ｊ 面発光型のＧａＡｓ系、ＩｎＰ系、ＧａＰ系の
発光ダイオード
（２）面発光型のＧａＡｓ系、ＩｎＰ系レーザダイオー
ド+1j Surface-emitting type GaAs-based, InP-based, and GaP-based light emitting diodes (2) Surface-emitting type GaAs-based and InP-based laser diodes
第１図は本発明の実施例を示す半導体発光素子の斜視図
。球レンズを用いる例である。
第２図は第１図のものの縦断面図。
第３図は本発明の他の実施例を示す発光素子の縦断面図
。半球レンズを用いる例である。
第４図は半球レンズの例を示す斜視図。
第５図は突起物の数が３個で半球レンズを用いた実施例
を示す斜視図。
第６図は本発明の発光素子と、従来の発光素子の、光フ
ァイバへの結合効率Ｃ％）の分布を示すグラフ。横軸は
光ファイバと発光素子の結合効率（％）で、縦軸はその
結合効率を持つ発光素子が得られる頻度の相対値を示す
。
第７図は球レンズを用いた従来例の発光素子の縦断面図
。
第８図は半球レンズを用いた従来例の発光素子の縦断面
図。
第９図はＬＥＤ基板に嵌合四部を形成し球レンズを接着
し、た従来例の兄ソＣ１素子の斜視図。
第１０図は第９図の縦断面図。
第］−１図はＬＥＤ基板に表金凹部７形成し２半球レン
ズを接着した従来例の発光素子の縦断面図。
１ ・・・・・・ＬＥＤ基板
２・・・・・・・・球状レンズ
３ ・・・半球状レンズ
４・・・接着剤
５−・・・光 線
６・・・・嵌合四部
７・・・・発光＠域
９・・・・突起物
発 明 者 奥 １） 寛
特許出願人 住友電気工業株式会社
第２図
第３１図
第７図
第８図
第１０図
第１１図FIG. 1 is a perspective view of a semiconductor light emitting device showing an embodiment of the present invention. This is an example using a spherical lens. FIG. 2 is a longitudinal sectional view of the one shown in FIG. FIG. 3 is a longitudinal sectional view of a light emitting device showing another embodiment of the present invention. This is an example using a hemispherical lens. FIG. 4 is a perspective view showing an example of a hemispherical lens. FIG. 5 is a perspective view showing an example in which the number of protrusions is three and a hemispherical lens is used. FIG. 6 is a graph showing the distribution of coupling efficiency (C%) to optical fibers of the light emitting device of the present invention and the conventional light emitting device. The horizontal axis shows the coupling efficiency (%) between the optical fiber and the light emitting element, and the vertical axis shows the relative value of the frequency at which a light emitting element having the coupling efficiency is obtained. FIG. 7 is a longitudinal sectional view of a conventional light emitting element using a ball lens. FIG. 8 is a longitudinal sectional view of a conventional light emitting element using a hemispherical lens. FIG. 9 is a perspective view of a conventional C1 element in which four fitting parts are formed on an LED board and a ball lens is bonded to the LED board. FIG. 10 is a longitudinal sectional view of FIG. 9. Fig.]-1 is a vertical cross-sectional view of a conventional light emitting element in which a surface metal concave portion 7 is formed on an LED substrate and two hemispherical lenses are bonded. 1 ... LED board 2 ... Spherical lens 3 ... Hemispherical lens 4 ... Adhesive 5 - ... Light ray 6 ... Four fitting parts 7 ...Emission @ Area 9... Protrusion Inventor Back 1) Hiro Patent Applicant Sumitomo Electric Industries, Ltd. Figure 2 Figure 31 Figure 7 Figure 8 Figure 10 Figure 11
Claims (1)
光素子基板１の上に、その中心Ａが発光領域７の中心Ｍ
と素子基板の面に対し垂直方向で合致Ｉ−かつレンズと
接触するように形成された３個以上の突起物９．９、・
・と、半導体素子基板１に接触しかし接着剤４によりこ
れらに接着された球状レンズ２又は半球状レンズ３とよ
！ｌｌ構成される事を特徴とする半導体発光素子。A semiconductor light emitting element substrate 1 having a light emitting region 7 and a center A of the semiconductor light emitting element substrate 1 on the semiconductor light emitting element substrate 1 having a center M of the light emitting region 7.
and three or more protrusions 9.9, which are formed so as to be aligned perpendicularly to the surface of the element substrate I- and to be in contact with the lens.
・The spherical lens 2 or the hemispherical lens 3 is in contact with the semiconductor element substrate 1 but is bonded thereto by the adhesive 4! 1. A semiconductor light emitting device characterized in that it is configured as follows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1813984A JPH0634410B2 (en) | 1984-02-02 | 1984-02-02 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1813984A JPH0634410B2 (en) | 1984-02-02 | 1984-02-02 | Semiconductor light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60161684A true JPS60161684A (en) | 1985-08-23 |
| JPH0634410B2 JPH0634410B2 (en) | 1994-05-02 |
Family
ID=11963266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1813984A Expired - Lifetime JPH0634410B2 (en) | 1984-02-02 | 1984-02-02 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0634410B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403773A (en) * | 1992-07-10 | 1995-04-04 | Sumimoto Electric Industries, Ltd. | Method for producing a semiconductor light emitting device |
| EP0662723A1 (en) * | 1994-01-07 | 1995-07-12 | Sumitomo Electric Industries, Limited | Method and apparatus of mounting a lens |
| EP1345059A1 (en) * | 2002-03-16 | 2003-09-17 | Agilent Technologies, Inc. (a Delaware corporation) | Integrated micro-optical elements |
| JP2006106746A (en) * | 2004-10-07 | 2006-04-20 | Agilent Technol Inc | Opto-electronics module having high coupling efficiency |
| US8172434B1 (en) | 2007-02-23 | 2012-05-08 | DeepSea Power and Light, Inc. | Submersible multi-color LED illumination system |
| JP2016122731A (en) * | 2014-12-25 | 2016-07-07 | ローム株式会社 | Optical semiconductor device and method of manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160182A (en) * | 1981-03-27 | 1982-10-02 | Fujitsu Ltd | Photosemiconductor device |
-
1984
- 1984-02-02 JP JP1813984A patent/JPH0634410B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160182A (en) * | 1981-03-27 | 1982-10-02 | Fujitsu Ltd | Photosemiconductor device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403773A (en) * | 1992-07-10 | 1995-04-04 | Sumimoto Electric Industries, Ltd. | Method for producing a semiconductor light emitting device |
| EP0662723A1 (en) * | 1994-01-07 | 1995-07-12 | Sumitomo Electric Industries, Limited | Method and apparatus of mounting a lens |
| US5578156A (en) * | 1994-01-07 | 1996-11-26 | Sumitomo Electric Industries, Ltd. | Method of mounting a lens on a light emitting diode |
| EP1345059A1 (en) * | 2002-03-16 | 2003-09-17 | Agilent Technologies, Inc. (a Delaware corporation) | Integrated micro-optical elements |
| US6751376B2 (en) | 2002-03-16 | 2004-06-15 | Agilent Technologies, Inc. | Integrated micro-optical elements |
| JP2006106746A (en) * | 2004-10-07 | 2006-04-20 | Agilent Technol Inc | Opto-electronics module having high coupling efficiency |
| US8172434B1 (en) | 2007-02-23 | 2012-05-08 | DeepSea Power and Light, Inc. | Submersible multi-color LED illumination system |
| JP2016122731A (en) * | 2014-12-25 | 2016-07-07 | ローム株式会社 | Optical semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0634410B2 (en) | 1994-05-02 |
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