JPS60160559U - semiconductor element - Google Patents

semiconductor element

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Publication number
JPS60160559U
JPS60160559U JP4768584U JP4768584U JPS60160559U JP S60160559 U JPS60160559 U JP S60160559U JP 4768584 U JP4768584 U JP 4768584U JP 4768584 U JP4768584 U JP 4768584U JP S60160559 U JPS60160559 U JP S60160559U
Authority
JP
Japan
Prior art keywords
semiconductor element
light
semiconductor device
type
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4768584U
Other languages
Japanese (ja)
Inventor
藤谷　克昭
Original Assignee
日立造船株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立造船株式会社 filed Critical 日立造船株式会社
Priority to JP4768584U priority Critical patent/JPS60160559U/en
Publication of JPS60160559U publication Critical patent/JPS60160559U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

図面はこの考案の半導体素子の１実施例を示し、第１図
は断面図、第２図は第１図の一部の拡大図である。 ２、３．７．９．　１０・・・Ｎ形半導体層、４．　−
５．８・・・Ｐ形半導体層、６・・・発光ダイオード部
、Ｊ１〜Ｊ５・・−ＰＮ接合面。The drawings show one embodiment of the semiconductor device of this invention, with FIG. 1 being a sectional view and FIG. 2 being an enlarged view of a part of FIG. 1. 2, 3.7.9. 10...N-type semiconductor layer, 4. −
5.8...P-type semiconductor layer, 6...Light emitting diode part, J1-J5...-PN junction surface.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] Ｐ形およびＮ形の複数の半導体層を積層して形成された
半導体素子において、通電時に順方向バイアスされるＰ
Ｎ接合部に発光用の不純物を添加して発光ダイオード部
を形成した半導体素子。In a semiconductor device formed by laminating a plurality of P-type and N-type semiconductor layers, P is forward biased when energized.
A semiconductor device in which a light-emitting diode portion is formed by adding a light-emitting impurity to the N-junction.
JP4768584U 1984-03-31 1984-03-31 semiconductor element Pending JPS60160559U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4768584U JPS60160559U (en) 1984-03-31 1984-03-31 semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4768584U JPS60160559U (en) 1984-03-31 1984-03-31 semiconductor element

Publications (1)

Publication Number Publication Date
JPS60160559U true JPS60160559U (en) 1985-10-25

Family

ID=30563236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4768584U Pending JPS60160559U (en) 1984-03-31 1984-03-31 semiconductor element

Country Status (1)

Country Link
JP (1) JPS60160559U (en)

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