JPS60147503A - Manufacture of hollow blade - Google Patents
Manufacture of hollow bladeInfo
- Publication number
- JPS60147503A JPS60147503A JP516884A JP516884A JPS60147503A JP S60147503 A JPS60147503 A JP S60147503A JP 516884 A JP516884 A JP 516884A JP 516884 A JP516884 A JP 516884A JP S60147503 A JPS60147503 A JP S60147503A
- Authority
- JP
- Japan
- Prior art keywords
- core material
- hollow
- blade
- blade profile
- profile portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01D—NON-POSITIVE DISPLACEMENT MACHINES OR ENGINES, e.g. STEAM TURBINES
- F01D5/00—Blades; Blade-carrying members; Heating, heat-insulating, cooling or antivibration means on the blades or the members
- F01D5/12—Blades
- F01D5/28—Selecting particular materials; Particular measures relating thereto; Measures against erosion or corrosion
- F01D5/284—Selection of ceramic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
- B23P15/04—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass turbine or like blades from several pieces
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
この発明は中空のタービンブレードの製造方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method for manufacturing hollow turbine blades.
タービンブレード、特にガスタービンブレードは高い強
度、耐熱性が要求される反面、遠心応力を緩和するため
軽量化が望まれる。従来、特開昭５４−１５５２１１号
公報に記載されているように、化学的蒸着（以下、ＣＶ
Ｄと称す）によってセラミックス焼結体の表面に緻密な
セラミックス被膜を形成して々る強度、耐熱性に優れか
つ比較的軽量なタービンブレードが提案されている。し
かし、ヒ記タービンブレードは芯材としてセラミックス
焼結体が使われているだめ、高速回転時にセラミックス
焼結体による遠心力が作用し、ブレードの寿命を縮める
恐れがあり、まだセラミックス焼結体の製造装置が別に
必要となるなどの問題がある。Turbine blades, especially gas turbine blades, are required to have high strength and heat resistance, but are also desired to be lightweight in order to alleviate centrifugal stress. Conventionally, chemical vapor deposition (hereinafter referred to as CV
A turbine blade that is relatively lightweight and has excellent strength and heat resistance by forming a dense ceramic film on the surface of a ceramic sintered body has been proposed. However, since the turbine blades mentioned above use ceramic sintered bodies as the core material, centrifugal force from the ceramic sintered bodies acts during high-speed rotation, which may shorten the blade life. There are problems such as the need for separate manufacturing equipment.
この発明はこのような従来の問題点を解消すべく創案さ
れたもので、強度、耐熱性に優れ、かつ遠心応力を著し
く緩和し得る中空ブレードをＣｖＤによって製造−する
方法を提供することを目的とする。This invention was devised to solve these conventional problems, and its purpose is to provide a method for manufacturing a hollow blade using CvD, which has excellent strength and heat resistance, and can significantly alleviate centrifugal stress. shall be.
この発明に係る中空ブレードの製造方法は、除剤除去し
、これによって中空体を得るものであり遠心力が生じる
翼プロフィル部のみをこのような中空体としている。In the method for manufacturing a hollow blade according to the present invention, a hollow body is obtained by removing the agent, and only the blade profile portion where centrifugal force occurs is made into such a hollow body.
以下、この発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
第１図は単体の中空タービンブレードの縦断面図である
。中空タービンブレードｌＶｉタービンロータに取付け
るためのクリスマスルート部２の上面にＳｉＣ，Ｓｉ、
Ｎ、などのセラミックスで作製された中空の翼プロフィ
ル部３を固着した構造をなしている。FIG. 1 is a longitudinal sectional view of a single hollow turbine blade. SiC, Si,
It has a structure in which a hollow blade profile portion 3 made of ceramics such as N is fixed.
つぎに翼プロフィル部３の製造について、第２図乃至＄
４図を参照しながら説明する。Next, regarding the manufacture of the blade profile part 3, see Figure 2 to $
This will be explained with reference to FIG.
まず、翼プロフィル部３の外形寸法よりやや小さ目の寸
法で、且つ同じ形状をした化学的な処理によって除去す
ることができる物質、例えば黒鉛、で形成された芯材４
を支持体５によって反応炉６内に支持する。前記反応炉
６は加熱装置７によって芯材４の表面にＣＶＤによる結
晶成長が起る最適なｌ晶度に加熱制御される。一方、原
料ガスはガス供給ノズル８から炉内に供給され、炉内に
おいて、高温によって熱分解され、非揮発性物質と揮発
性ガスとに分解される。原料ガスとして、ＣＨ，５ｉＣ
ｚ、＋Ｈ，、５ｉＣ７４十Ｎ）１．＋）（、などが１更
用される。そして、反応炉の下流側には原料ガスが炉内
を均一な分布で流れるように廃ガスを排出するための流
出口９を有する廃ガス排出部１０が設けられており、こ
の排出部１０からの廃ガスは廃ガス処理装置１１に導か
れ、処理される。First, a core material 4 made of a substance that can be removed by chemical treatment, such as graphite, has dimensions slightly smaller than the outer dimensions of the blade profile portion 3 and has the same shape.
is supported in the reactor 6 by a support 5. The reaction furnace 6 is heated and controlled by a heating device 7 to an optimum degree of crystallinity at which crystal growth occurs on the surface of the core material 4 by CVD. On the other hand, the raw material gas is supplied into the furnace from the gas supply nozzle 8, and is thermally decomposed at high temperature in the furnace to be decomposed into non-volatile substances and volatile gas. CH, 5iC as raw material gas
z, +H,, 5iC740N)1. +)(, etc. are used for one change.And, on the downstream side of the reactor, there is a waste gas discharge part having an outlet 9 for discharging the waste gas so that the raw material gas flows in the furnace with a uniform distribution. 10 is provided, and the waste gas from this discharge part 10 is guided to a waste gas treatment device 11 and treated.
いま、加熱装置７によって炉内が反応に適した温度に加
熱さ−れているところに、原料ガスとして（１）、５ｉ
ＣＩＢ＋Ｈｔを供給ノズル８から供給すると、原料ガス
は、
ＣＨ，５ｉＣ１Ｉｌ＋Ｈ２”””” ８４Ｃ＋ ３ＨＣ
ｔの反応を起し、非揮発生物質（ＳｉＣ）が芯材４であ
る黒鉛の表面に析出し、揮発性ガス（３ＨＣ１）が廃ガ
スとなって炉外へ排出される。芯材の表面に所定の膜厚
のセラミックス１２を析出させた後、炉外に取り出して
冷却する。このとき、ＳｉＣと黒鉛の熱膨張係数が両者
とも約４．４〜４．８Ｘ１０−’／℃と等しいので、Ｓ
ＩＣにき裂が入ったり、剥離が起るようなことがない。Now, while the inside of the furnace is being heated to a temperature suitable for the reaction by the heating device 7, (1) and 5i are added as raw material gases.
When CIB+Ht is supplied from the supply nozzle 8, the raw material gas becomes CH, 5iC1Il+H2"""" 84C+ 3HC
t reaction occurs, a non-volatile substance (SiC) is deposited on the surface of graphite which is the core material 4, and volatile gas (3HC1) becomes waste gas and is discharged to the outside of the furnace. After depositing ceramics 12 with a predetermined thickness on the surface of the core material, it is taken out of the furnace and cooled. At this time, since the thermal expansion coefficients of SiC and graphite are both approximately 4.4 to 4.8X10-'/℃, S
There will be no cracking or peeling of the IC.
このようにして、第３図及び第４図に示すような翼プロ
フィル部の半製品１３ができ上る。In this way, a semifinished product 13 of the blade profile portion as shown in FIGS. 3 and 4 is completed.
続いて、前記翼プロフィル部を約８００〜１０００℃で
酸化させ、芯材４の黒鉛を除去し、一端が開放した有底
の翼プロフィル部３が得られる。こ９翼プロフィル部３
の開放端をクリスマスルート部２の上面に形成された環
状溝２０に嵌め込み、ＭＯ−Ｍ ｎ法、活性金属のコー
ティング等によるメタライジング後のろう付け、あるい
は酸化物ソルダーによる接着などの公知の接合方法によ
り接合固着する。Subsequently, the blade profile portion is oxidized at about 800 to 1000° C. to remove graphite from the core material 4, and a bottomed blade profile portion 3 with one end open is obtained. This 9 wing profile part 3
The open end of the Christmas root part 2 is fitted into the annular groove 20 formed on the upper surface of the Christmas root section 2, and then joined by known methods such as MO-Mn method, brazing after metallizing by active metal coating, or adhesion by oxide solder. It is bonded and fixed by a method.
ガお、上記実施例でハ、石材として化学的除去が可能が
ものを使用しているが、これに限定されるものでなく、
機械的な除去、例えば切削々どによって除去できる材料
あるいけ化学的機械的な除去を併用できる材料でもって
芯材を構成することもモきる。In the above example, stones that can be chemically removed are used, but the stone is not limited to this.
It is also possible to construct the core material from a material that can be removed mechanically, such as by cutting, or by a combination of chemical and mechanical methods.
また、芯材４の表面に非揮発性物質であるセラミックス
を均一に析出するだめに、支持体５を回転させて芯材に
回転を与えるか、あるいけ供給ノズルを回転させてガス
に旋回又は乱れを起させることも効果的である。In order to uniformly deposit ceramics, which are non-volatile substances, on the surface of the core material 4, the support 5 may be rotated to impart rotation to the core material, or the supply nozzle may be rotated to cause the gas to swirl or It is also effective to cause disturbance.
更に、翼プロフィル部３とクリスマスルート部２との固
着手段として、レーザによる局部加熱方式が採用できる
。即ち、第５図に示す如く、ノズル８Ａから供給される
原料ガスの雰囲気の中で前記方式によって接合箇所のみ
を加熱してやれば、該箇所にセラミックスが蒸着して両
者を接合することができる。この方式によれば、加熱箇
所が局部的なので、熱歪の発生が少々く、精度の高い中
空ブレードとなる。Further, as a means for fixing the wing profile portion 3 and the Christmas root portion 2, a local heating method using a laser can be adopted. That is, as shown in FIG. 5, by heating only the joint portion using the method described above in the atmosphere of the raw material gas supplied from the nozzle 8A, the ceramics can be vapor-deposited at the portion and the two can be joined. According to this method, since the heated portion is localized, thermal distortion is less likely to occur, resulting in a highly accurate hollow blade.
上述のとおり、本発明によれば、一端部が閉塞された中
空のセラミックス製翼プロフィル部をＣＶＤによって短
時間に製造することができ、しかも翼プロフィル部の表
面は緻密質のＣＶＤ膜で形成されるため、仕上げ工程を
省くことができる＝また、中空のセラミック製ブレード
をＣＶＤによって製造したことにより、製造装置が簡単
となる。As described above, according to the present invention, a hollow ceramic blade profile portion with one end closed can be manufactured in a short time by CVD, and the surface of the blade profile portion is formed of a dense CVD film. Therefore, the finishing process can be omitted; and since the hollow ceramic blade is manufactured by CVD, the manufacturing equipment becomes simple.
第１図は本発明に係る単体の中空ブレードの縦断面図、
第２図は本発明を実施するためのＣＶＤ装置の概略図、
第３図Ｖ′１ｃＶＤ膜で被機された芯材の断面図、第４
図ｒｔ第３図のＩＶ−ＩＶ線に沿った断面図、第５図は
中空ブレードとクリスマスル、−ト部とを接合する他の
固着手段の概略図である。
１・・・タービンブレード、３・・・セラミックス製翼
プロフィル部、６・・・反応炉、７・・・加熱装置、３
０・・・レーザ。、
第１図
第２図
第３図
第４図
第５図
（−）
手続補正書
昭和５９年３ 月／、ア）］。
特許庁長官殿
］ 事件の表示
昭和５９年 特許願 第５１６８ 号
３、補正をする者
１印、との関係 特許出願人
名称（５９０）三井造船株式会社
４代理人
７、補正の対象
明細書の発明の詳細な説明の欄。
８、補正の内容
（１） 明細書第４頁第１９行のｒｃＨ３ｓｉｃ１３＋
１３００℃
Ｈ２−一→ Ｓｊ Ｃ＋ ３ＨＣＩ Ｊを以上FIG. 1 is a longitudinal sectional view of a single hollow blade according to the present invention;
FIG. 2 is a schematic diagram of a CVD apparatus for implementing the present invention;
Figure 3: Cross-sectional view of core material coated with V'1cVD film, No. 4
FIG. 3 is a cross-sectional view taken along the line IV--IV in FIG. 3, and FIG. 5 is a schematic diagram of another fixing means for joining the hollow blade, the christmasle, and the toe portion. DESCRIPTION OF SYMBOLS 1... Turbine blade, 3... Ceramic blade profile part, 6... Reactor, 7... Heating device, 3
0... Laser. , Figure 1, Figure 2, Figure 3, Figure 4, Figure 5 (-) Procedural amendment March 1980/, a)]. [Mr. Commissioner of the Japan Patent Office] Indication of the case 1982 Patent Application No. 5168 3, Relationship with the person making the amendment 1 Seal Patent applicant name (590) Mitsui Engineering & Shipbuilding Co., Ltd. 4 Agent 7, Specification subject to amendment Column for detailed description of the invention. 8. Contents of amendment (1) rcH3sic13+ on page 4, line 19 of the specification
1300℃ H2-1 → Sj C+ 3HCI J or more
Claims (1)
可能な石材に、所定の厚みのセラミックスの膜を形成し
た後、前記芯材を除去し、セラミックスよシなる中空の
翼プロフィル部を形成し、この翼グロフィノ一部もクリ
スマスルート部に固着接合することを特徴とする中空ブ
レードの製造方法。 ゛（２） 前記翼プロフィル部とクリスマスルート部と
をレーザによる局部加熱によつそ固着接合することを特
徴とする特許請求の範囲第１項の中空ブレードの製造方
法。(1) After forming a ceramic film of a predetermined thickness on a removable stone that has a shape corresponding to the blade profile, the core material is removed and a hollow blade profile made of ceramic is formed. A method for manufacturing a hollow blade, characterized in that a part of the wing grofino is also fixedly joined to the Christmas root part. (2) The method for manufacturing a hollow blade according to claim 1, characterized in that the blade profile portion and the Christmas root portion are fixedly joined by local heating using a laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP516884A JPS60147503A (en) | 1984-01-13 | 1984-01-13 | Manufacture of hollow blade |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP516884A JPS60147503A (en) | 1984-01-13 | 1984-01-13 | Manufacture of hollow blade |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60147503A true JPS60147503A (en) | 1985-08-03 |
Family
ID=11603704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP516884A Pending JPS60147503A (en) | 1984-01-13 | 1984-01-13 | Manufacture of hollow blade |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60147503A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62184101U (en) * | 1986-05-15 | 1987-11-21 | ||
| FR2695121A1 (en) * | 1992-09-02 | 1994-03-04 | Rolls Royce Plc | Method for manufacturing a hollow matrix element, graphite element for implementing the method and matrix element obtained. |
| US7302989B1 (en) | 2006-06-06 | 2007-12-04 | Siemens Power Generation, Inc. | Modular mold system with ceramic inserts |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5030910A (en) * | 1973-04-05 | 1975-03-27 | ||
| JPS58185489A (en) * | 1982-04-20 | 1983-10-29 | 東芝セラミツクス株式会社 | Manufacture of silicon nitride crucible |
-
1984
- 1984-01-13 JP JP516884A patent/JPS60147503A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5030910A (en) * | 1973-04-05 | 1975-03-27 | ||
| JPS58185489A (en) * | 1982-04-20 | 1983-10-29 | 東芝セラミツクス株式会社 | Manufacture of silicon nitride crucible |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62184101U (en) * | 1986-05-15 | 1987-11-21 | ||
| FR2695121A1 (en) * | 1992-09-02 | 1994-03-04 | Rolls Royce Plc | Method for manufacturing a hollow matrix element, graphite element for implementing the method and matrix element obtained. |
| US7302989B1 (en) | 2006-06-06 | 2007-12-04 | Siemens Power Generation, Inc. | Modular mold system with ceramic inserts |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5978105B2 (en) | Silicon carbide ceramic joined body and method for producing silicon carbide ceramic joined body | |
| TW200307652A (en) | Quartz glass thermal sprayed parts and method for producing the same | |
| US5611883A (en) | Joining ceramics and attaching fasteners to ceramics by gas phase selective beam deposition | |
| US10150184B2 (en) | Method of forming a cladding layer having an integral channel | |
| EP2116637A2 (en) | Crucible for melting silicon and release agent used to the same | |
| FR2473399A1 (en) | HOLLOW BODY OF CERAMIC OR OXIDIZED CERAMIC, WITHOUT BINDER AND PROCESS FOR PRODUCING THE SAME | |
| JPS60147503A (en) | Manufacture of hollow blade | |
| JPH09286621A (en) | Production of plate material made of quartz glass and device therefor | |
| US4500483A (en) | Manufacture of hollow CVD silicon nitride articles | |
| JP4286142B2 (en) | How to make a continuous coating on the surface of a part | |
| IL144552A (en) | Method of producing high aspect ratio dome by vapor deposition | |
| JPH0251225A (en) | Core tube for semiconductor diffusing furnace | |
| JPS61281030A (en) | Mold for molding optical element | |
| JPH01104879A (en) | Composite carbon fiber and its production | |
| JPH10287495A (en) | High-purity silicon carbide-based semiconductor treating member and its production | |
| JPH11335840A (en) | Precision reproduction by chemical vapor deposition | |
| WO2000067311A3 (en) | Method for producing a wafer support in a high-temperature cvd reactor | |
| JPS62200722A (en) | Member for semiconductor diffusion furnace | |
| JPS61206604A (en) | Manufacture of ceramic pipe | |
| JPH0649946B2 (en) | Method for manufacturing tubular member | |
| JPS58199855A (en) | Surface treatment of tuyere | |
| JP3197701B2 (en) | Method for forming silicon carbide coating on carbon fiber / carbon composite material | |
| JPH03234381A (en) | Formation of film on inside surface of pipe | |
| JP2000273632A (en) | Production of flat ceramic bulk material free from warpage by chemical vapor deposition method | |
| JPS59162149A (en) | Method for applying silicon carbide film to surface of quartz glass |