JPS60142517A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatusInfo
- Publication number
- JPS60142517A JPS60142517A JP25059183A JP25059183A JPS60142517A JP S60142517 A JPS60142517 A JP S60142517A JP 25059183 A JP25059183 A JP 25059183A JP 25059183 A JP25059183 A JP 25059183A JP S60142517 A JPS60142517 A JP S60142517A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- fluid
- air
- semiconductor manufacturing
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はウェーハの表面加工を行う半導体装置に関し、
特にリソグラフィ工程のレジスト塗付、現像に使用され
るものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a semiconductor device for processing the surface of a wafer;
It is particularly used for resist coating and development in lithography processes.
ウェーッｚの表面に対するレジストの塗付、現像は、ウ
ェーハチャック上で回転するウェーハの中心部に薬液を
滴下させ、これを周縁部に拡散することＫよってなされ
る。Application of resist to the surface of the wafer z and development are performed by dropping a chemical onto the center of the wafer rotating on the wafer chuck and spreading it to the periphery.
添付図面の第１図は従来装置の一構成例の断面図である
。なお、以下の図面の説明において同一要素は同一符号
で示しである。図示しない駆動機構によシ回転させられ
るスピンドル１の先端には、バキュームによってウェー
ハ２を吸着、保持するウェーハチャック３が取シ付けら
れる。ウェーハ２の上方には、薬液を滴下するためのノ
ズル４が設けられ、ウェーハ２の側方および下方はカッ
プ５によって囲まれる。そして、カップ”５の下側には
薬液等を排出する排出口６ａ 、６ｂが設けられている
。FIG. 1 of the accompanying drawings is a sectional view of one configuration example of a conventional device. In addition, in the following description of the drawings, the same elements are indicated by the same reference numerals. A wafer chuck 3 that attracts and holds a wafer 2 by vacuum is attached to the tip of a spindle 1 that is rotated by a drive mechanism (not shown). A nozzle 4 for dropping a chemical solution is provided above the wafer 2, and the sides and bottom of the wafer 2 are surrounded by a cup 5. Discharge ports 6a and 6b are provided on the lower side of the cup "5" for discharging medicinal liquid and the like.
第２図は第１図の構成例の平面図である。薬液を滴下１
°るノズル４はスピンドルｌ、ウェーハチャック３の中
心軸上に設けられている。また−ウェーハ２は、その中
心がスピンドル１、ウェーハチャック３の中心軸上に来
るように吸着、保持される。FIG. 2 is a plan view of the configuration example shown in FIG. 1. Drop the chemical solution 1
A rotating nozzle 4 is provided on the central axis of the spindle l and wafer chuck 3. Furthermore, the wafer 2 is attracted and held so that its center is on the central axis of the spindle 1 and the wafer chuck 3.
次に、第１図および第２図に示す構成例の動作を説明す
る。この構成例でレジスト塗付を行う場合には、まず静
止状態でレジストをノズル４からウェーハ２の中心に滴
下１″る。次に、ウェーハ２を低速で回転させて（回転
させなくてもよい）ウェーハ２０表面にレジストを拡散
させ、所定の回転数で均一なレジスト膜を形成、させる
。Next, the operation of the configuration example shown in FIGS. 1 and 2 will be explained. When applying resist with this configuration example, first drop 1" of resist from the nozzle 4 onto the center of the wafer 2 in a stationary state. Next, rotate the wafer 2 at a low speed (it is not necessary to rotate it). ) Diffuse resist onto the surface of the wafer 20 and form a uniform resist film at a predetermined rotation speed.
レジストの現像を行う場合には、まず任意の回転数で現
像液、リンス液を同時もしくは交互に滴下したのち、リ
ンス液で洗浄する。そして、高速回転によって乾燥させ
る。When developing a resist, first, a developer and a rinse solution are dropped simultaneously or alternately at an arbitrary number of revolutions, and then the resist is washed with the rinse solution. Then, it is dried by high speed rotation.
ところが上記の如き構成例によってウェーハの表面加工
を行うと、レジスト、現像液等の薬液が裏面にまわシこ
に゛でウェーハ２の裏面にレジスト剤等が１ｉｆｔ着す
ることがあシ、また、薬液がカップ５の内側面から跳ね
返ってウェーハ２に再付着することがある。However, when the surface of the wafer is processed using the above-mentioned configuration example, chemical solutions such as resist and developer are distributed to the back surface, and resist agent etc. may adhere to the back surface of the wafer 2 by 1ft. The chemical liquid may bounce off the inner surface of the cup 5 and re-adhere to the wafer 2.
そこで、かかる欠点を除去するために、従来から種々の
技術が提案されている。特開昭５４−９９１９、および
特開昭５５−１６５１７０に示されたレジスト塗付装置
はその一例である。すなわち、特開陥潟−９９１９では
、回転車付装置の盆と支持台周辺に再飛散を防止するフ
ォトレジスト吸着部を設け、吸着部を通して装置外へ排
気することによシフオドレジストの再付着を防止してい
る。また、特開昭５５−１６５１７０では、真空チャッ
ク側面からウェーハ裏面に空気を吹き出させることによ
シ、ウェーハ裏面へのレジスト剤の付着を防止している
。Therefore, various techniques have been proposed in the past in order to eliminate such drawbacks. The resist coating apparatus shown in JP-A-54-9919 and JP-A-55-165170 is one example. That is, in JP-A-9919, a photoresist adsorption part is provided around the tray and support base of a rotating wheel-equipped device to prevent re-scattering, and by exhausting the photoresist to the outside of the device through the adsorption part, the photoresist is re-adhered. is prevented. Further, in Japanese Patent Application Laid-Open No. 55-165170, adhesion of resist agent to the back surface of the wafer is prevented by blowing air from the side surface of the vacuum chuck to the back surface of the wafer.
しかし、特開昭５４−９９１９に示された技術によれば
、カップ５からの薬液跳ね返シによる再付着の防止には
効果があるものの、薬液のウェーッ・２の裏面へのまわ
シ込みを効果的に防止することはできない。他方、特開
昭５５−１６５１７０に示された技術によれば、ウェー
ハ２の裏面への薬液まわシ込みは防止できるものの、カ
ップ５からの薬液跳ね返シによる再刊漸を効果的に防止
することはできない。However, according to the technique shown in Japanese Patent Application Laid-Open No. 54-9919, although it is effective in preventing re-adhesion due to the splashing of the chemical liquid from the cup 5, it is effective in preventing the chemical liquid from being splashed onto the back surface of the wedge 2. cannot be effectively prevented. On the other hand, according to the technique disclosed in Japanese Patent Application Laid-Open No. 55-165170, although it is possible to prevent the chemical liquid from being spilled onto the back surface of the wafer 2, it is not possible to effectively prevent the chemical liquid from being reprinted due to splashing of the chemical liquid from the cup 5. I can't.
さらに、上記い一４゛れの技術によっても、ウェーハ２
の近傍で流体の流れに不均一性が現われ、このために薬
液温度が不均一（ウェーハの中心部と周縁部に温度差が
現われる）になったシ、薬液（例えばレジスト溶媒）の
蒸気圧にムラが現れたシするなどの事態が生じる。この
流体の流れの不拘＝はレジスト膜厚の不均一、現像の不
均一を招くため、半導体素子のパターン寸法の精度が低
下する。Furthermore, even with the above-mentioned 14 techniques, the wafer 2
Non-uniformity appears in the fluid flow near the wafer, which causes non-uniform chemical temperature (a temperature difference appears between the center and the periphery of the wafer), and the vapor pressure of the chemical (for example, resist solvent) Situations such as unevenness may occur. This unrestricted fluid flow causes non-uniform resist film thickness and non-uniform development, resulting in a decrease in the accuracy of pattern dimensions of semiconductor elements.
本発明は上記の従来技術の欠点を克服するためになされ
たもので、薬液のウェーッ・裏面へのまわシ込み、カッ
プからの跳ね返シによる薬液のウェーハ表面への再付着
を効果的に防止しながら、ウェーハ表面での薬液の分布
、温度等を均一に保つことができるようにした半導体製
造装置を提供することを目的とする。The present invention has been made to overcome the above-mentioned drawbacks of the prior art, and effectively prevents the chemical liquid from penetrating into the wafer and backside, and from re-adhering to the wafer surface due to splashing from the cup. However, it is an object of the present invention to provide a semiconductor manufacturing apparatus that can maintain uniform distribution of chemical solution, temperature, etc. on the wafer surface.
上記の目的を実現するため不発明は、ウェーハチャック
に保持されて回転するウェーハの裏面中心部から周縁部
に向けて流体（例えば空気）を吹き出す流体吹出装置を
設けると共に、ウェーハの表面および裏面附近の流体（
例えは薬液飛沫を含む空気）をウェーハの周縁部から装
置外部に吸い込む流体吸込装置を設けることによって、
ウェーハ表面近傍の流体の流れを均一にできるようにし
た半導体製造装置を提供するものである。In order to achieve the above object, the present invention provides a fluid blowing device that blows out a fluid (for example, air) from the center of the back surface of a rotating wafer held by a wafer chuck toward the periphery thereof, and The fluid (
By providing a fluid suction device that sucks air containing chemical droplets from the periphery of the wafer to the outside of the device,
The present invention provides a semiconductor manufacturing apparatus that can uniformize the flow of fluid near the wafer surface.
以下、添付図面の第３図乃至第８図を参照して本発明の
いくつかの実施例を説明する。第３図は一実施例の構成
図で、第３図（ａ）は側面からみた破砕断面を示し、第
３図（ｂｌは平面からみた状態を示す。ウェーハ２の下
側Ｖｉ−はスピンドル１と同軸のプロペラ型の回転翼（
ファン）１１ａが設けられ、カップ５の内周面には吸気
口１２が設けられる。ウェーハ２０表面処理中はファン
ｌｌａが回転し、清浄な空気が矢印ａの方向に送られる
。同時に吸気１」１２からは図示しないポンプによって
カップ内の空気が矢印すの方向に吸い込まれるので、ウ
ェーハ２の表門近傍でも矢印Ｃの方向に空気の流れが出
来る。Hereinafter, some embodiments of the present invention will be described with reference to FIGS. 3 to 8 of the accompanying drawings. FIG. 3 is a block diagram of one embodiment, in which FIG. 3(a) shows a fractured cross section seen from the side, and FIG. A propeller-shaped rotor blade coaxial with
A fan 11a is provided, and an intake port 12 is provided on the inner peripheral surface of the cup 5. During the surface treatment of the wafer 20, the fan lla rotates and clean air is sent in the direction of arrow a. At the same time, the air in the cup is sucked in from the intake air 1'' 12 in the direction of the arrow C by a pump (not shown), so that air flows in the direction of the arrow C near the front gate of the wafer 2 as well.
このようにすると、矢印ａの空気の流れと矢印すの空気
の６に、れを互いに作用させて、矢印ｃｏ）ｙ気の流れ
を一様で適切な９；さに制御できる。In this way, the air flow indicated by the arrow a and the air flow indicated by the arrow S can be made to interact with each other, and the flow of air indicated by the arrows co) and y can be controlled to be uniform and appropriate.
第４図は他の実施例の構成図で、第４図（ａ）は側面か
らみた破砕断面を示し、第４図（ｂ）は平面からみた状
態を示す。ＦＡ３図の実凡例と異なるのはファン１１ｂ
の形状のみである。すなわち、第３図のような上方向（
空気の流れを作るプロペラ型のファン１１ ａ ＷＣ代
えて、横方向に空気の流れを作るファンｌｌｂを設けて
いる。このようにすると、第３図の実施例と同様に矢印
Ｃの空気の流れを一様で適切な強さにできる。FIG. 4 is a block diagram of another embodiment, in which FIG. 4(a) shows a fractured cross section seen from the side, and FIG. 4(b) shows the state seen from a plane. Fan 11b is different from the legend on the FA3 diagram.
It is only the shape of . In other words, the upward direction (
In place of the propeller type fan 11a WC that creates air flow, a fan llb that creates air flow in the lateral direction is provided. In this way, the air flow in the direction of arrow C can be made uniform and at an appropriate strength, similar to the embodiment shown in FIG.
第５図はさらに他の実施例の構成図で、第５図（ａ）は
側面からみた断面を示し、第５図（ｂ）Ｆｉ平面からみ
た状態を示す。上方向および横方向に同時に空気を送る
ファンｌｌｃをスピンドル１と同軸に設け、吸気口１２
にはらせん状に吸気仕切板１３を配設する。また、ファ
ンｌｌｃの円周内面に切った歯には歯車３１が噛み合っ
ておシ歯車３１を回転駆動するモータ３ＯＫよシフアン
ｌｌｃは回転させられる。このようにすると、吸気がス
ムーズに行なわれるので、矢印Ｃの空気の流れをよシ一
様で適切な強さのものにすることができる。FIG. 5 is a block diagram of still another embodiment, in which FIG. 5(a) shows a cross section seen from the side, and FIG. 5(b) shows a state seen from the Fi plane. A fan llc that simultaneously sends air upwardly and laterally is provided coaxially with the spindle 1, and the air inlet 12
An intake partition plate 13 is arranged in a spiral shape. Further, a gear 31 is engaged with teeth cut on the inner circumferential surface of the fan llc, and the motor 3OK and the fan llc, which rotationally drive the gear 31, are rotated. In this way, air intake is carried out smoothly, so that the air flow in the direction of arrow C can be made uniform and of appropriate strength.
第６図はさらに他の実施例の構成図で、第６図（ａ）は
側面からみた破砕断面を示し、第６１ＭＲ（ｂｌは平面
からみた状態を示す。ファンｌｌａ〜ｌｌ’ｃに代えて
らせん状に送気仕切板１４ａを配設した送風管２０ａを
設け、図示しないポンプ、ボンベ等かう清浄な空気等を
送るようにする。このようにすると、矢印Ｃの空気の流
れが一様かつ適切な強さのもの’：：’４ｔ；ｌ：３５
ＶＣ（ｌｉ４’Ｐ）％１ｆｉ９゜。’）ｄ４ＫＺＴ１．
．１゜７、らみた破砕断面を示す。送風管２Ｕｂの先端
をウェーハ２の裏面の中心部に向ける。そして、温度制
御装置？Ｚ １５によって一定温度にコントロールされ
た流体（空気等）を配’ｇｆ １６、送風管２０ｂを介
してウェーハ２の裏面に供給する。このように１−ると
、ウェーハ２の中Ｉむト１５と周縁部の温既差をなく１
゛ようＫすることができる。FIG. 6 is a configuration diagram of still another embodiment, in which FIG. 6(a) shows a fractured cross section seen from the side, and 61st MR (bl shows the state seen from the plane. Instead of fans lla to ll'c A blow pipe 20a with a spiral air partition plate 14a is provided to send clean air from a pump, cylinder, etc. (not shown).In this way, the air flow in the direction of arrow C is uniform and uniform. Appropriate strength'::'4t;l:35
VC(li4'P)%1fi9°. ') d4KZT1.
．． A fractured cross section viewed from 1°7 is shown. The tip of the blower tube 2Ub is directed toward the center of the back surface of the wafer 2. And the temperature control device? A fluid (such as air) whose temperature is controlled to a constant temperature by the Z 15 is supplied to the back surface of the wafer 2 via the gf 16 and the blower pipe 20b. In this way, the temperature difference between the inner part 15 of the wafer 2 and the peripheral part is eliminated.
You can do it like this.
第８図はさらに他の実施例の構成図で、側面からみた破
砕断面を示す。第７図の実施例と異るのは、送風羽Δ）
Ｃの先端がウェーハ２０磯面の周縁部に向けられ−（い
ることである。FIG. 8 is a block diagram of still another embodiment, showing a fractured cross section viewed from the side. The difference from the embodiment shown in Fig. 7 is that the blower blade Δ)
The tip of C is directed toward the peripheral edge of the surface of the wafer 20.
〔り６明の効果〕
上記の如く本発明によれは、ウェーハの裏面の中心部か
ら周ｋ ｔｉｌｓに流体を吹き出させると共に、ウェー
ハの周縁部から外部へ流体を吸い込むようにし、ウェー
ハの表面近傍の流体の流れを均一にできるようにしたの
で、薬液のウェーハ裏面へのまわシ込みと、カップから
の跳ね返、ＪＣよる薬液のウェーハ表面への再付着を効
果的に防止しながら、ウェーハ裏面での薬液の分イロ、
温度等を均一にすることができる半導体製造装置を得る
ことができる。[Effects of 6 Lights] As described above, according to the present invention, fluid is blown out from the center of the back surface of the wafer to the periphery, and fluid is sucked from the periphery of the wafer to the outside, so that the fluid is sucked into the vicinity of the front surface of the wafer. This allows the flow of fluid to be uniform, effectively preventing the chemical from flowing onto the backside of the wafer, rebounding from the cup, and re-adhering the chemical to the wafer surface due to JC. The chemical solution in the
It is possible to obtain a semiconductor manufacturing apparatus that can make temperature and the like uniform.
また、ウェーハの裏面から吹き出させる流体の温度を制
御することにより、ウェーハの温度をより均一に保つこ
とも可能になる。Furthermore, by controlling the temperature of the fluid blown out from the back surface of the wafer, it is also possible to keep the temperature of the wafer more uniform.
第１図は従来装置の一構成例の断面図、第２図は第１図
の構成例の平面図、第３図は本発明の一実施例の構成図
、第４図乃至第８図は本発明の他の実施例の構成図であ
る。
ｌ・・・スピンドル、２・・・ウェーハ、３・・・ウェ
ーハチャック、４・・・ノズル、５・・・カップ、６ａ
、６ｂ・・・排出口、ｌｌａ 、 ｌｌｂ 、 ｌｌｃ
・・・ファン、１２・・・吸気口、１３・・・吸気仕切
板、１４ａ 、 １４ｂ 、 １４ｃ・・・送気仕切板
、２、Ｏａ 、 ２０ｂ・・・送風管、加・・・モータ
、３１・・・歯ｓ、。
出願人代理人 猪 股 清
第１圏
第２置
第３図（０）
第、５図（ｂ）
第４ ’？ （ａ）
第４図（ｂ）
第 ５図（０）
第５図（ｂ）
第６図（Ｇ）
第６図（ｂ）
第７図
第Ｂ図FIG. 1 is a cross-sectional view of one configuration example of a conventional device, FIG. 2 is a plan view of the configuration example of FIG. 1, FIG. 3 is a configuration diagram of an embodiment of the present invention, and FIGS. 4 to 8 are FIG. 3 is a configuration diagram of another embodiment of the present invention. l...Spindle, 2...Wafer, 3...Wafer chuck, 4...Nozzle, 5...Cup, 6a
, 6b... discharge port, lla, llb, llc
...Fan, 12...Intake port, 13...Intake partition plate, 14a, 14b, 14c...Air supply partition plate, 2, Oa, 20b...Blow pipe, Addition...Motor, 31...teeth s. Applicant's agent Kiyo Inomata Section 1, Section 2, Figure 3 (0), Figure 5 (b), Figure 4 '? (a) Figure 4 (b) Figure 5 (0) Figure 5 (b) Figure 6 (G) Figure 6 (b) Figure 7 Figure B
Claims (1)
の中心部に薬液を滴下し、該ウェーハを回転させて前記
薬液を中心部から周縁部に拡散させ、前記ウェーハの表
面処理を行う半導体製造装置において、 前記ウェーハの裏面中心部から周縁部に向けて流体を吹
き出す流体吹出装置と、 前記ウェーハの表面および裏面附近の流体を該ウェーハ
の周縁部から外部に吸い込む流体吸込装置とを備えたこ
とを特徴とする半導体製造装置。 ２、流体吹出装置は、空気を吹き出すようにした特許請
求の範囲第１項記載の半導体製造装置。 ３、流体吸込装置は、ウェーハの下方から裏面中央部に
向けて気体を送出する回転翼である特許請求の範囲第１
項もしく社業２項記載の半導体製造装置。 ４、流体吹出装置は、温度制御された流体を吹き出すよ
うにした特許請求の範囲第１項、第２項もしくは第３項
のいずれかに記載の半導体製造装置。[Claims] 1. Surface treatment of the wafer by dropping a chemical onto the center of a wafer held by a rotatable wafer chuck, rotating the wafer to diffuse the chemical from the center to the periphery; A semiconductor manufacturing apparatus that performs the following steps: a fluid blowing device that blows out fluid from the center of the back surface of the wafer toward the periphery; and a fluid suction device that sucks fluid near the front and back surfaces of the wafer from the periphery of the wafer to the outside. A semiconductor manufacturing device characterized by comprising: 2. The semiconductor manufacturing apparatus according to claim 1, wherein the fluid blowing device blows out air. 3. The fluid suction device is a rotary blade that sends gas from below the wafer toward the center of the back surface.
Semiconductor manufacturing equipment as described in item 2 or company business item 2. 4. The semiconductor manufacturing apparatus according to any one of claims 1, 2, and 3, wherein the fluid blowing device blows out temperature-controlled fluid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25059183A JPS60142517A (en) | 1983-12-28 | 1983-12-28 | Semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25059183A JPS60142517A (en) | 1983-12-28 | 1983-12-28 | Semiconductor manufacturing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60142517A true JPS60142517A (en) | 1985-07-27 |
Family
ID=17210163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25059183A Pending JPS60142517A (en) | 1983-12-28 | 1983-12-28 | Semiconductor manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60142517A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02303047A (en) * | 1989-05-18 | 1990-12-17 | Shioya Seisakusho:Kk | Wafer chucking and device therefor |
| JPH0576814A (en) * | 1992-02-10 | 1993-03-30 | Tokyo Electron Ltd | Coating device |
| JP2004274028A (en) * | 2003-02-20 | 2004-09-30 | Tokyo Ohka Kogyo Co Ltd | Device and method for development |
-
1983
- 1983-12-28 JP JP25059183A patent/JPS60142517A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02303047A (en) * | 1989-05-18 | 1990-12-17 | Shioya Seisakusho:Kk | Wafer chucking and device therefor |
| JPH0576814A (en) * | 1992-02-10 | 1993-03-30 | Tokyo Electron Ltd | Coating device |
| JP2004274028A (en) * | 2003-02-20 | 2004-09-30 | Tokyo Ohka Kogyo Co Ltd | Device and method for development |
| US6893172B2 (en) | 2003-02-20 | 2005-05-17 | Tokyo Ohka Kogyo Co., Ltd. | Developing apparatus and developing method |
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