JPS6014222A - Optical wavelength converting element - Google Patents
Optical wavelength converting elementInfo
- Publication number
- JPS6014222A JPS6014222A JP58122824A JP12282483A JPS6014222A JP S6014222 A JPS6014222 A JP S6014222A JP 58122824 A JP58122824 A JP 58122824A JP 12282483 A JP12282483 A JP 12282483A JP S6014222 A JPS6014222 A JP S6014222A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- substrate
- waveguide
- refractive index
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3544—Particular phase matching techniques
- G02F1/3546—Active phase matching, e.g. by electro- or thermo-optic tuning
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/21—Thermal instability, i.e. DC drift, of an optical modulator; Arrangements or methods for the reduction thereof
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、レーザ光を使用する情報処理分野、あるいは
光応用計測制御分野に利用する光変調変換素子に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical modulation conversion element used in the field of information processing using laser light or the field of optical measurement and control.
従来例の構成とその問題点
従来、非線形光学効果を応用してレーザ光の波長変換を
行なうものとして、第1図に示す構成が提案されている
。LiNbO3単結晶1の表面にTi2・・ミ゛
を熱拡散して形成した光導波路2(断面の大きさは2〜
8μm程度)の中に、光を閉じ込めて非線形光学効果を
有効に発揮させレーザ入力基本波3を波長変換してレー
ザ出力変換波4を得ようとするものである。しかしなが
ら、この構造では次のよう力問題点があるために、実用
デバイス化が進んでいない。Conventional configuration and its problems Conventionally, a configuration shown in FIG. 1 has been proposed for converting the wavelength of laser light by applying a nonlinear optical effect. Optical waveguide 2 formed by thermally diffusing Ti2...mi on the surface of LiNbO3 single crystal 1 (cross-sectional size is 2~
The purpose is to confine light within a wavelength of approximately 8 μm) to effectively exert the nonlinear optical effect, convert the wavelength of the laser input fundamental wave 3, and obtain the laser output converted wave 4. However, this structure has not been developed into a practical device because of the following power problems.
中 非線形光学効果に不可欠な位相整合(基本波と変換
波の屈折率を一致させること)に、屈折率の温度変化を
用いているために、周囲温度に脱感であり±0.01
’C程度の温度安定度が必要である。Medium: Temperature changes in the refractive index are used for phase matching (matching the refractive index of the fundamental wave and the converted wave), which is essential for nonlinear optical effects, so it is insensitive to the ambient temperature and is ±0.01
Temperature stability on the order of 'C is required.
山)非線形光学係数にd13=5.3 X 10−23
m、IVを用いる構造であるために変換効率が小さい。Mountain) Nonlinear optical coefficient d13 = 5.3 x 10-23
Since the structure uses m and IV, the conversion efficiency is low.
100mWの光入力で変換効率ηが1%程度である。At a light input of 100 mW, the conversion efficiency η is about 1%.
発明の目的
本発明は、新しい光導波路構造を採用することにより、
温度安定性が良く、かつ高効率な光波長変換デバイスを
提供することを目的としている。Purpose of the Invention The present invention achieves the following by adopting a new optical waveguide structure.
The purpose is to provide an optical wavelength conversion device with good temperature stability and high efficiency.
発明の構成
本発明は、LiNbO3あるいばLiTaO3等の単結
晶基板表面に部分的に屈折率を増大させた光導波路を形
成し、この導波路上に、屈折率が基板と光導波路の中間
の値を有する薄膜を設置したものである。Structure of the Invention The present invention forms an optical waveguide with a partially increased refractive index on the surface of a single crystal substrate such as LiNbO3 or LiTaO3, and on this waveguide, a layer with a refractive index between the substrate and the optical waveguide is formed. A thin film with a value is installed.
実施例の説明
第2図は本発明の一実施例の構成図であり、LiNbO
3単結晶Y板単結晶給板5軸に垂直に切断したもの)に
、τiの熱拡散あるいはにイオン交換等により光導波路
6を形成し、さらにこの光導波路上に、光導波路6より
屈折率が小さく基板5より屈折率が大きい上部層7を設
置する構造である。DESCRIPTION OF EMBODIMENTS FIG. 2 is a block diagram of an embodiment of the present invention, in which LiNbO
An optical waveguide 6 is formed on the single-crystal Y plate (cut perpendicular to the 5-axis of the single-crystal feed plate) by thermal diffusion of τi or ion exchange. This is a structure in which an upper layer 7 having a smaller refractive index and a higher refractive index than the substrate 5 is provided.
」二部層7は必らずしも非線形光学効果を有する材料で
ある必要はなく、TiO2,ZnSのアモルファス膜で
あってもよい。基板5.光導波路6.上部層7の屈折率
を各々n2.n、、n3 とすると、本発明においては
n(:) n3 ”) n2なる条件を必要とする。The two-part layer 7 does not necessarily have to be a material having a nonlinear optical effect, and may be an amorphous film of TiO2 or ZnS. Substrate 5. Optical waveguide6. The refractive index of the upper layer 7 is set to n2. n, , n3, the present invention requires the condition n(:) n3 '') n2.
本発明の動作を以下説明する。The operation of the present invention will be explained below.
光波長変換デバイスの一例として波長を捧にする第2次
高調波発生(以下SHGと略す)をとり上げると、基本
波および高調波の界分布を各々fω。Taking second harmonic generation (hereinafter abbreviated as SHG), which uses wavelength as an example of an optical wavelength conversion device, the field distributions of the fundamental wave and harmonics are respectively fω.
f 2 (1)とすると、変換効率ηは次の関係で表わ
される。When f 2 (1), the conversion efficiency η is expressed by the following relationship.
ηoCd2・工2
ここでdは非線形光学係数
■=f8fム・f2odS
(Sは横断面を示す)
本発明は上部層7を装荷することにより、積分値工の増
大を図ることにより変換効率の向上を図ったものであり
、光導波路6の大きさを4μm×4μm 、 jl、=
=2.35 、 n2=2.24 、 n3=2.30
(ZnS)上部層7の膜厚を5μmとすると、上部層了
が無い時に対し、はぼ6倍の工の値が得られ、変換効率
ηはほぼ4o倍の向上となった。この理由は、上部層7
の有無による光波界分布の相違によるもので、第3図に
上部層7がある時の厚み方向の界分布を示し、基本波f
。Jは光導波路6の中にほぼ閉じ込められるが、高調波
f2.は光導波路6と上部層7とにまたがって伝搬する
ために、界5″ジ
の打消しが小さく(積分値工が増大)変換効率が向上す
る。ηoCd2・Ec2 Here, d is the nonlinear optical coefficient ■=f8fm・f2odS (S indicates the cross section) The present invention improves the conversion efficiency by increasing the integral value by loading the upper layer 7. The size of the optical waveguide 6 is 4μm×4μm, jl,=
=2.35, n2=2.24, n3=2.30
When the film thickness of the (ZnS) upper layer 7 was set to 5 μm, a value of about 6 times higher than that without the upper layer was obtained, and the conversion efficiency η was improved by about 40 times. The reason for this is that the upper layer 7
This is due to the difference in the optical wave field distribution depending on the presence or absence of the fundamental wave f.
. J is almost confined within the optical waveguide 6, but harmonics f2. Since it propagates across the optical waveguide 6 and the upper layer 7, the cancellation of the field 5'' is small (the integral value increases), and the conversion efficiency is improved.
また、LiNbO3結晶の結晶方向の偏波をもつ基本波
と高調波の波長変換が可能であるために、非線形光学係
数ds3(ds3z 7d+s )を利用でき、更に変
換効率の向上が図られる点が特徴である。In addition, since it is possible to convert the wavelength of the fundamental wave and harmonics that have polarization in the crystal direction of the LiNbO3 crystal, it is possible to use the nonlinear optical coefficient ds3 (ds3z 7d+s), which further improves the conversion efficiency. It is.
本発明にかかる基本的な実施例は第2図の構成であるが
、より実用性の向上を図った具体的実施例を以下に示す
。The basic embodiment according to the present invention has the configuration shown in FIG. 2, but a specific embodiment with improved practicality will be shown below.
第4図は第2の実施例であり非線形光学物質であるLi
NbO3基板6の焦電効果(温度変化により電荷が発生
する現象)の影響を低減させるために、LiNbO3結
晶5の2面(結晶Z軸に垂直に切断した面)を電極8.
8′を持続して相互に電気的に短絡した構成である。Figure 4 shows the second embodiment of Li, which is a nonlinear optical material.
In order to reduce the influence of the pyroelectric effect (a phenomenon in which electric charges are generated due to temperature changes) of the NbO3 substrate 6, two surfaces of the LiNbO3 crystal 5 (the surfaces cut perpendicular to the crystal Z axis) are connected to electrodes 8.
8' and are electrically shorted to each other.
第6図は第3実施例であり、LiNbO3の電気光学効
果を応用して光波長変換を電圧制御するもので、光導波
路6の両側に電圧印加用電極9,9′を装着したもので
ある。ここで10は電極引き出し線である。本実施例の
利点は、常に最大変換率が6S・
得られるように印加電圧により微調整できる点にある。FIG. 6 shows a third embodiment, in which the electro-optic effect of LiNbO3 is applied to voltage-control optical wavelength conversion, and voltage-applying electrodes 9 and 9' are attached to both sides of the optical waveguide 6. . Here, 10 is an electrode lead line. The advantage of this embodiment is that it can be finely adjusted by adjusting the applied voltage so that the maximum conversion rate is always 6S.
なお、以上の説明はLiNbO3単結晶の基板に光導波
路を形成したものを取り上げてきたが、LiNbO3以
外にもLiTaO3結晶基板に対するCu(銅)拡散、
あるいはK(カリウム) 、 Ag<銀)等のイオン交
換による光導波路を形成したものに対しても、上部層の
形成による光波長変換効率の向上は可能である。The above explanation has focused on the case where an optical waveguide is formed on a LiNbO3 single crystal substrate, but in addition to LiNbO3, Cu (copper) diffusion on a LiTaO3 crystal substrate,
Alternatively, it is possible to improve the optical wavelength conversion efficiency by forming an upper layer even in the case where an optical waveguide is formed by ion exchange of K (potassium), Ag<silver, or the like.
発明の効果
本発明は光導波路の上に上部層を形成することを特徴と
する光波長変換素子であり、光波長変換効率の向上(従
来に比べ30倍以上)が最大の効果である。従って、本
発明は赤外半導体レーザと組み合わせて小型可視レーザ
光源として種々の光ディスプレイ、光情報機器に応用展
開が考えられる。Effects of the Invention The present invention is an optical wavelength conversion element characterized by forming an upper layer on an optical waveguide, and its greatest effect is an improvement in optical wavelength conversion efficiency (30 times or more compared to the conventional one). Therefore, the present invention can be applied to various optical displays and optical information devices as a compact visible laser light source in combination with an infrared semiconductor laser.
第1図は従来のレーザー光の波長変換素子の概略図、第
2図は本発明の一実施例にがかるレーザ光の波長変換素
子の概略図、第3図は本発明の素子における光波界分布
を示す図、第4図、第6図は本発明の他の実施例にかか
る波長変換素子の概略図である。
5・・、・・LiNbO3単結晶基板、 6・・・・・
・光導波路、7・・・・・上部層、8,8′・・・・・
・電極。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
据
−1:Fig. 1 is a schematic diagram of a conventional laser beam wavelength conversion element, Fig. 2 is a schematic diagram of a laser beam wavelength conversion element according to an embodiment of the present invention, and Fig. 3 is a light wave field distribution in the element of the present invention. , FIG. 4, and FIG. 6 are schematic diagrams of wavelength conversion elements according to other embodiments of the present invention. 5...,...LiNbO3 single crystal substrate, 6...
・Optical waveguide, 7... Upper layer, 8, 8'...
·electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Zuzue-1:
Claims (2)
屈折率を増大させた光導波路の上に、屈折率が前記基板
と光導波路の中間の値を有する薄膜を設置したことを特
徴とする光波長変換素子。(1) A thin film having a refractive index intermediate between that of the substrate and the optical waveguide is disposed on an optical waveguide formed on the surface of a nonlinear material single crystal substrate and having a partially increased refractive index. Optical wavelength conversion element.
とする特許請求の範囲第1項に記載の光波長変換素子。(2) The optical wavelength conversion element according to claim 1, wherein two surfaces of a single crystal substrate are electrically short-circuited.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58122824A JPS6014222A (en) | 1983-07-06 | 1983-07-06 | Optical wavelength converting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58122824A JPS6014222A (en) | 1983-07-06 | 1983-07-06 | Optical wavelength converting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6014222A true JPS6014222A (en) | 1985-01-24 |
Family
ID=14845538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58122824A Pending JPS6014222A (en) | 1983-07-06 | 1983-07-06 | Optical wavelength converting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6014222A (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61182027A (en) * | 1985-02-08 | 1986-08-14 | Toshiba Corp | Non-linear optical waveguide element |
JPS61189686A (en) * | 1985-02-19 | 1986-08-23 | Matsushita Electric Ind Co Ltd | Laser device |
JPS6315234A (en) * | 1986-07-07 | 1988-01-22 | Fuji Photo Film Co Ltd | Optical wavelength converting element |
JPS63199328A (en) * | 1987-02-16 | 1988-08-17 | Fuji Photo Film Co Ltd | Optical wavelength converting element |
JPS6482022A (en) * | 1987-09-25 | 1989-03-28 | Nec Corp | Waveguide type wavelength converting element |
JPS6490426A (en) * | 1987-09-30 | 1989-04-06 | Fuji Photo Film Co Ltd | Light wavelength converting element |
JPH0198631U (en) * | 1987-12-23 | 1989-06-30 | ||
US4896930A (en) * | 1987-03-19 | 1990-01-30 | Hitachi, Ltd. | Optical functional device of an optical waveguide type |
JPH02248933A (en) * | 1989-03-22 | 1990-10-04 | Matsushita Electric Ind Co Ltd | Short-wavelength laser light source and light information processor |
JPH02250043A (en) * | 1987-02-13 | 1990-10-05 | Fuji Photo Film Co Ltd | Optical wavelength converting element |
EP0490387A2 (en) * | 1990-12-13 | 1992-06-17 | Japan Aviation Electronics Industry, Limited | Waveguide type optical device |
JPH04214526A (en) * | 1990-12-13 | 1992-08-05 | Japan Aviation Electron Ind Ltd | Waveguide type optical device |
JPH04254834A (en) * | 1991-02-07 | 1992-09-10 | Matsushita Electric Ind Co Ltd | Light wavelength conversion element and manufacture thereof |
US5617499A (en) * | 1995-09-08 | 1997-04-01 | University Of New Mexico | Technique for fabrication of a poled electrooptic fiber segment |
US6385377B1 (en) * | 1998-08-03 | 2002-05-07 | University Of New Mexico | Technique for fabrication of a poled electro-optic fiber segment |
US6466722B1 (en) * | 1998-03-12 | 2002-10-15 | Toyota Jidosha Kabushiki Kaisha | Method of fabricating optical nonlinear thin film waveguide and optical nonlinear thin film waveguide |
JP2004502066A (en) * | 2000-06-30 | 2004-01-22 | フオレシア・システム・デシヤプマン | Exhaust volume and exhaust system including this exhaust volume |
EP2339396A1 (en) * | 2008-09-26 | 2011-06-29 | Mitsubishi Electric Corporation | Optical wavelength conversion element, wavelength conversion laser device, and image display device |
-
1983
- 1983-07-06 JP JP58122824A patent/JPS6014222A/en active Pending
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61182027A (en) * | 1985-02-08 | 1986-08-14 | Toshiba Corp | Non-linear optical waveguide element |
JPS61189686A (en) * | 1985-02-19 | 1986-08-23 | Matsushita Electric Ind Co Ltd | Laser device |
JPS6315234A (en) * | 1986-07-07 | 1988-01-22 | Fuji Photo Film Co Ltd | Optical wavelength converting element |
JPH02250043A (en) * | 1987-02-13 | 1990-10-05 | Fuji Photo Film Co Ltd | Optical wavelength converting element |
JP2641053B2 (en) * | 1987-02-13 | 1997-08-13 | 富士写真フイルム株式会社 | Optical wavelength conversion element |
JPS63199328A (en) * | 1987-02-16 | 1988-08-17 | Fuji Photo Film Co Ltd | Optical wavelength converting element |
US4896930A (en) * | 1987-03-19 | 1990-01-30 | Hitachi, Ltd. | Optical functional device of an optical waveguide type |
JPS6482022A (en) * | 1987-09-25 | 1989-03-28 | Nec Corp | Waveguide type wavelength converting element |
JPS6490426A (en) * | 1987-09-30 | 1989-04-06 | Fuji Photo Film Co Ltd | Light wavelength converting element |
JP2527338B2 (en) * | 1987-09-30 | 1996-08-21 | 富士写真フイルム株式会社 | Optical wavelength conversion element |
JPH0198631U (en) * | 1987-12-23 | 1989-06-30 | ||
JPH0335320Y2 (en) * | 1987-12-23 | 1991-07-26 | ||
JPH02248933A (en) * | 1989-03-22 | 1990-10-04 | Matsushita Electric Ind Co Ltd | Short-wavelength laser light source and light information processor |
JPH07117675B2 (en) * | 1989-03-22 | 1995-12-18 | 松下電器産業株式会社 | Short wavelength laser light source and optical information processing device |
JPH04214526A (en) * | 1990-12-13 | 1992-08-05 | Japan Aviation Electron Ind Ltd | Waveguide type optical device |
EP0490387A2 (en) * | 1990-12-13 | 1992-06-17 | Japan Aviation Electronics Industry, Limited | Waveguide type optical device |
JPH04254834A (en) * | 1991-02-07 | 1992-09-10 | Matsushita Electric Ind Co Ltd | Light wavelength conversion element and manufacture thereof |
US5617499A (en) * | 1995-09-08 | 1997-04-01 | University Of New Mexico | Technique for fabrication of a poled electrooptic fiber segment |
US6466722B1 (en) * | 1998-03-12 | 2002-10-15 | Toyota Jidosha Kabushiki Kaisha | Method of fabricating optical nonlinear thin film waveguide and optical nonlinear thin film waveguide |
US6385377B1 (en) * | 1998-08-03 | 2002-05-07 | University Of New Mexico | Technique for fabrication of a poled electro-optic fiber segment |
JP2004502066A (en) * | 2000-06-30 | 2004-01-22 | フオレシア・システム・デシヤプマン | Exhaust volume and exhaust system including this exhaust volume |
EP2339396A1 (en) * | 2008-09-26 | 2011-06-29 | Mitsubishi Electric Corporation | Optical wavelength conversion element, wavelength conversion laser device, and image display device |
EP2339396A4 (en) * | 2008-09-26 | 2012-03-07 | Mitsubishi Electric Corp | Optical wavelength conversion element, wavelength conversion laser device, and image display device |
JP5361897B2 (en) * | 2008-09-26 | 2013-12-04 | 三菱電機株式会社 | Optical wavelength conversion element, wavelength conversion laser device, and image display device |
US8705165B2 (en) | 2008-09-26 | 2014-04-22 | Mitsubishi Electric Corporation | Optical wavelength conversion element, wavelength conversion laser device, and image display device |
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