JPS60134609A - Sampling phase detector - Google Patents
Sampling phase detectorInfo
- Publication number
- JPS60134609A JPS60134609A JP24340183A JP24340183A JPS60134609A JP S60134609 A JPS60134609 A JP S60134609A JP 24340183 A JP24340183 A JP 24340183A JP 24340183 A JP24340183 A JP 24340183A JP S60134609 A JPS60134609 A JP S60134609A
- Authority
- JP
- Japan
- Prior art keywords
- frequency signal
- field effect
- low
- gallium
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D13/00—Circuits for comparing the phase or frequency of two mutually-independent oscillations
- H03D13/007—Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations
- H03D13/008—Circuits for comparing the phase or frequency of two mutually-independent oscillations by analog multiplication of the oscillations or by performing a similar analog operation on the oscillations using transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manipulation Of Pulses (AREA)
- Networks Using Active Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（ａｌ 発明の技術分野
本発明はサンプリング位相検波器に係り、特に超高周波
信号を低周波信号でサンプルする事により直接的に低周
波信号の高調波成分と超高周波信号の位相比較を行うサ
ンプリング位相検波器に関するものである。DETAILED DESCRIPTION OF THE INVENTION (al) Technical Field of the Invention The present invention relates to a sampling phase detector, and in particular, by sampling an ultra-high frequency signal with a low-frequency signal, it is possible to directly detect the harmonic components of the low-frequency signal and the ultra-high frequency signal. The present invention relates to a sampling phase detector that performs phase comparison.
山） 従来技術と問題点
利用周波数がどんどん高くなっているが、これ１−８
に伴って例えば２０〜５０ＧＨｚ帯で１０〜１０程度の
周波数安定度のある信号源が必要になる場合がある。PRIOR ART AND PROBLEMS As the frequencies used are getting higher and higher, a signal source with a frequency stability of about 10 to 10 in the 20 to 50 GHz band, for example, may be required.
この様な要求を満足する為には安定な水晶発振器の出力
を逓倍して所定の周波数を持つ出力を得るか、又は超高
周波発振器の出力を安定な水晶発振器の出力に位相同期
させて必要な安定度及び所定の周波数を持つ出力を得る
等の方法がある。In order to satisfy these requirements, the output of a stable crystal oscillator must be multiplied to obtain an output with a predetermined frequency, or the output of an ultra-high frequency oscillator must be phase-synchronized with the output of a stable crystal oscillator. There are methods such as obtaining an output with stability and a predetermined frequency.
前者の場合は回路構成要素が多くなり、価格が高くなる
。一方、後者の場合は回路構成要素が少ないため価格は
前者よりも安くなると云う利点がある。In the former case, the number of circuit components increases and the price increases. On the other hand, the latter has the advantage of being cheaper than the former because it has fewer circuit components.
第１図は後者の方法で安定度の高い超高周波信号を得る
際に用いられるサンプリング位相検波器の従来例を示す
。FIG. 1 shows a conventional example of a sampling phase detector used when obtaining a highly stable ultra-high frequency signal using the latter method.
この回路の概略の動作は次の様である。The general operation of this circuit is as follows.
即ち、端子４と５の間に加えられた低周波信号はステン
プリカバリ−・ダイオード３で正及び負の巾の狭いパル
ス列に変換された後ショットキーバリア・ダイオード１
及び２に加えられる。That is, a low frequency signal applied between terminals 4 and 5 is converted into a narrow pulse train with positive and negative widths by a step recovery diode 3, and then passed through a Schottky barrier diode 1.
and added to 2.
そこで、このショットキーバリア・ダイオードｌ及び２
はスイッチング動作をする。Therefore, these Schottky barrier diodes 1 and 2
performs a switching operation.
一方、端子６に加えられた超高周波信号は同しく前記シ
ョットキーバリア・ダイオードｌ及び２に加えられ、こ
こで混合されて前記低周波信号の高調波成分と超高周波
信号との位相差に比例した電圧が端子７から取出される
。On the other hand, the ultrahigh frequency signal applied to terminal 6 is also applied to the Schottky barrier diodes 1 and 2, where it is mixed and is proportional to the phase difference between the harmonic components of the low frequency signal and the ultrahigh frequency signal. The voltage is taken out from terminal 7.
この回路はステップリカバリ−・ダイオード３の負荷と
なっているショットキーバリア・ダイオード１及び２の
インピーダンスが低い為に検波感度が低いと云う問題が
あった。This circuit has a problem in that the detection sensitivity is low because the impedance of the Schottky barrier diodes 1 and 2 serving as a load for the step recovery diode 3 is low.
（Ｃ１発明の目的
本発明は上記従来技術の問題に鑑みなされたものであっ
て、スイッチング素子としてガリウム砒素電界効果型ト
ランジスタを使用する事により検波感度の高いサンプリ
ング位相検波器を提供する事を目的としている。(C1 Purpose of the Invention The present invention was made in view of the above-mentioned problems of the prior art, and its purpose is to provide a sampling phase detector with high detection sensitivity by using a gallium arsenide field effect transistor as a switching element. It is said that
（ｄｌ 発明の構成
上記発明の目的は低周波信号を巾の狭いパルス列に変換
する手段と該変換手段で得られたパルス列と超高周波信
号とを電界効果型トランジスタに加えて混合する手段と
該混合手段で得られた該低周波信号の高調波成分と該超
高周波信号との位相差に比例した電圧を取出す手段とか
らなることを特徴とするサンプリング位相検波器を提供
することにより達成される。(dl) Structure of the Invention The object of the invention is to provide a means for converting a low frequency signal into a narrow pulse train, a means for adding the pulse train obtained by the converting means and an ultra-high frequency signal to a field effect transistor, and mixing the pulse train. This is achieved by providing a sampling phase detector comprising means for extracting a voltage proportional to the phase difference between the harmonic component of the low frequency signal obtained by the means and the ultrahigh frequency signal.
ｆｅ） 発明の実施例
第２図は本発明の一実施例を、第３図は第２図の動作を
説明する為の図で左側の数字は第２図の同じ数字の部分
の波形を示す。fe) Embodiment of the Invention Fig. 2 shows an embodiment of the present invention, Fig. 3 is a diagram for explaining the operation of Fig. 2, and the numbers on the left indicate the waveforms of the parts with the same numbers in Fig. 2. .
第２図に於て、８，５０及び５１は線輪を、１０．１１
及び１３はコンデンサを、３はステップリカバリー・ダ
イオードを、１２はガリウム砒素電界効果型トランジス
タを、１４．５３及び５４は抵抗器を、１５〜１９は端
子をそれぞれ示す。In Figure 2, 8, 50 and 51 are wire wheels, 10.11
and 13 are capacitors, 3 is a step recovery diode, 12 is a gallium arsenide field effect transistor, 14, 53 and 54 are resistors, and 15 to 19 are terminals, respectively.
これらの素子は次の様に接続されている。These elements are connected as follows.
ガリウム砒素電界効果型トランジスタ１２のゲートはコ
ンデンサ比ステップリカバリニ・ダイオード３．抵抗器
１４．線輪８．コンデンサ１０からなる変換手段を介し
て端子１５と、ソースは地気と、ドレインはコンデンサ
５２を介して端子１６及び線輪５１を介して端子１７と
、端子１７はコンデンサ１３を介して地気とそれぞれ接
続されている。The gate of the gallium arsenide field effect transistor 12 is a capacitor ratio step recovery diode 3. Resistor 14. Line ring 8. The source is connected to the earth through a conversion means consisting of a capacitor 10, the drain is connected to the earth through the capacitor 52, the terminal 16 is connected to the terminal 17 through the wire ring 51, and the terminal 17 is connected to the earth through the capacitor 13. each connected.
尚、端子１８は抵抗器５３及び線輪５ｏを介して前記ト
ランジスタ１２のゲート電極と、端子１９は抵抗器５４
を介して端子１７とそれぞれ接続される。Note that the terminal 18 is connected to the gate electrode of the transistor 12 via the resistor 53 and the wire 5o, and the terminal 19 is connected to the resistor 54.
are respectively connected to the terminals 17 via the terminals 17 and 17.
この様に接続された回路の動作を第３図を参考にしなが
ら説明する。The operation of the circuit connected in this way will be explained with reference to FIG.
先ず、端子１５に加えられた例えば１００ＭＨｚの低周
波信号は、線輪８を通ってステンプリカバリー・ダイオ
ード３に加えられて巾の狭いパルス列に変換された後コ
ンデンサ１１で低周波成分が除去されガリウム砒素電界
効果型トランジスタ１２のゲートに加えられる（第３図
の）。そこで、このガリウム砒素電界効果型トランジス
タ１２はスイッチング動作を行うことになる。First, a low frequency signal of, for example, 100 MHz applied to the terminal 15 passes through the coil 8 and is applied to the step recovery diode 3 where it is converted into a narrow pulse train, and then the low frequency component is removed by the capacitor 11. It is applied to the gate of gallium arsenide field effect transistor 12 (FIG. 3). Therefore, this gallium arsenide field effect transistor 12 performs a switching operation.
ここで、コンデンサ１０は入力された低周波信号のステ
ンプリカバリー・ダイオード３に対するマツチング用コ
ンデンサとして、抵抗器１４は安定化用抵抗器としてそ
れぞれ用いられている。Here, the capacitor 10 is used as a matching capacitor for the input low frequency signal to the step recovery diode 3, and the resistor 14 is used as a stabilizing resistor.
又、端子１８及び１９には所定の直流電圧が加えられて
いる。Further, a predetermined DC voltage is applied to the terminals 18 and 19.
一方、端子１６からガリウム砒素電界効果型トランジス
タ１２のドレインに加えられた超高周波信号電圧は前記
ガリウム砒素電界効果型トランジスタ１２のオン／オフ
により第３図■に示す様に変化する。On the other hand, the ultra-high frequency signal voltage applied from the terminal 16 to the drain of the gallium arsenide field effect transistor 12 changes as shown in FIG.
ここで、第３図■の打ち抜かれた部分すは超高周波信号
と低周波信号の高調渡分との位相が一致していれば超高
周波信号の同じ部分がいつも打ち抜かれる事になるが、
位相が一致しないと打ち抜かれる部分がずれて行（。そ
こで、第３図■に示す様に例えばａより左側の部分は電
圧の高い部分が、ａの右側の部分は電圧の低い部分が打
ち抜かれるので、コンデンサ１３で積分された時の電圧
の変化は第３図■に示す様に徐々に上昇して波を打つ。Here, if the phase of the punched out portion of the ultra-high frequency signal and the harmonic portion of the low-frequency signal match in the punched out portion of Fig. 3 (■), the same portion of the ultra-high frequency signal will always be punched out.
If the phases do not match, the punched parts will be out of alignment (. Therefore, as shown in Figure 3 (■), for example, the part to the left of a is punched out with a high voltage part, and the part to the right of a is punched with a low voltage part. Therefore, the change in voltage when integrated by the capacitor 13 gradually rises and waves as shown in Figure 3 (■).
これは結局、低周波信号の高調波成分と超高周波信号
との位相を比較した事になる。This ultimately amounts to comparing the phases of the harmonic components of the low frequency signal and the super high frequency signal.
第４図は第２図のガリウム砒素電界効果型トランジスタ
１２のゲート電圧Ｖｇとドレイン電圧Ｖｄに対する等検
波感度の地図を示す。FIG. 4 shows a map of equal detection sensitivity with respect to gate voltage Vg and drain voltage Vd of the gallium arsenide field effect transistor 12 shown in FIG.
第５図ｆａｔは本発明の別の実施例を示し、第２図と同
一の記号は同一の部分を示す。FIG. 5 fat shows another embodiment of the present invention, in which the same symbols as in FIG. 2 indicate the same parts.
又、第５図ｆｂｌは第５図（ａｌの動作を説明する為の
図で、左側の数字は第５図（ａｌの同じ部分の波形を示
す。Further, FIG. 5 fbl is a diagram for explaining the operation of FIG. 5 (al), and the numbers on the left side indicate the waveforms of the same portion of FIG. 5 (al).
第５図（ａ）に於て、端子１５に加えられ変成器２７で
不平衡−平衡変換された例えばｌｏＯＭｌｌｚの低周波
信号は、ステップリカバリー・ダイオード３及びコンデ
ンサ２５及び２６により→−及び−の極性を持つ巾の狭
いパルス列に変換れた後ガリウム砒素電界効果型トラン
ジスタ２１及び２１に加えられる。In FIG. 5(a), a low frequency signal, for example loOMllz, applied to the terminal 15 and unbalanced-balanced converted by the transformer 27 is converted to →- and - by the step recovery diode 3 and capacitors 25 and 26. After being converted into a narrow pulse train with polarity, it is applied to gallium arsenide field effect transistors 21 and 21.
このガリウム砒素電界効果型トランジスタ２１及び２２
は端子１８からピンチオフ以下の直流電圧が、端子１９
からｏＶ付近の直流電圧が、端子２０からは定められた
十の直流電圧がそれぞれ加えられているが、前記の様に
この巾の狭いパルス列によりスイッチング動作を行う。These gallium arsenide field effect transistors 21 and 22
The DC voltage below the pinch-off from terminal 18 is applied to terminal 19.
DC voltages around oV are applied from the terminals 20, and as described above, the switching operation is performed by this narrow pulse train.
一方、端子１６に入力された超高周波信号は１８０度ハ
イブリッド回路２３で互いに逆位相の超高周波信号が取
り出され、スイッチング動作をしているガリウム砒素電
界効果型卜゛ランジスタ２１及び２２のドレインにそれ
ぞれ加えられる。On the other hand, the ultra-high frequency signals inputted to the terminal 16 are taken out by the 180-degree hybrid circuit 23 and are sent to the drains of the gallium arsenide field effect transistors 21 and 22 which are performing switching operations. Added.
そこで、ガリウム砒素電界効果型トランジスタ２１及び
２２のドレイン電圧は第５図（ｂｌの■及び■に示す様
に変化する。この電圧変化は積分用コンデンサ２８及び
２９で積分された後、増幅器３Ｏで加えられ第３図■と
同じ様な波形が得られる。Therefore, the drain voltages of the gallium arsenide field effect transistors 21 and 22 change as shown in (■) and (■) in FIG. A waveform similar to that shown in Figure 3 (■) is obtained.
第６図（ａ）及び（ｂ）は更に別の実施例を示すが、第
５図との違いは端子１６から超高周波信号をガリウム砒
素電界効果型トランジスタ２１及び２２のドレインへ同
相で供給する様にしてあり、その他は同じ回路構成であ
る。FIGS. 6(a) and 6(b) show yet another embodiment, and the difference from FIG. 5 is that the ultra-high frequency signal is supplied from the terminal 16 to the drains of the gallium arsenide field effect transistors 21 and 22 in the same phase. The other circuit configurations are the same.
そこで、２つガリウム砒素電界効果型トランジスタ２１
及び２２のドレイン電圧の変化は差動増幅器４０を用い
て取り出している。Therefore, two gallium arsenide field effect transistors 21
A differential amplifier 40 is used to extract changes in the drain voltages of 2 and 22.
ｌｆｌ 発明の詳細
な説明した様に本発明によればスイッチング素子として
ショットキーバリア・ダイオードの代りにガリウム砒素
電界効果型トランジスタを用いたので、ステップリカバ
リー・ダイオードの負荷が軽（なった。lfl As described in detail, according to the present invention, a gallium arsenide field effect transistor is used as a switching element instead of a Schottky barrier diode, so the load on the step recovery diode is reduced.
この為、ステップリカバリー・ダイオードで得られるパ
ルスは中がより狭く、且つ高さがより高くなって検波感
度が従来のものに比較して改善された。For this reason, the pulse obtained by the step recovery diode has a narrower inside and a higher height, and the detection sensitivity has been improved compared to the conventional one.
例えば、データの一例として周波数的２６Ｇｌｌｚに於
て従来の検波感度的５ｍｖ／ｒａｄが本発明の場合は約
３０ｍｖ／ｒａｄに、数ＧＨｚ以下の周波数で約１００
ｍＶ／ｒａｄで飽和する所が本発明では直線的に増加し
て約２ＧＨｚで約１．ＯＶ／ｒａｄであった。For example, as an example of data, the conventional detection sensitivity of 5 mv/rad at a frequency of 26 Gllz becomes approximately 30 mv/rad in the case of the present invention, and approximately 100 mv/rad at a frequency of several GHz or less.
In the present invention, the saturation point at mV/rad increases linearly to about 1.0 mV/rad at about 2 GHz. It was OV/rad.
第１図はサンプリング位相器の従来例を、第２図は本発
明の一実施例を、第３図及び第４図は第２図の回路を説
明する為の図を、第５図（ａ）は本発明の別の実施例を
、第５図Ｔｂｌは第５図（ａ）の動作を説明する為の図
を、第６図（ａｌは更に別の実施例を、第６図山）は第
６図＋ａ）の動作を説明する為の図をそれぞれ示す。
図中、３はステップリカバリー・ダイオードを、１２は
ガリウムひ素電界効果型トランジスタを、１１及び１３
はコンデンサをそれぞれ示す。
０
Ｏ■ Ｏ
ＱＬツー八へ県 ８
喝 Ｎ
Ｃ） ０
Ｑ０FIG. 1 shows a conventional example of a sampling phase shifter, FIG. 2 shows an embodiment of the present invention, FIGS. 3 and 4 are diagrams for explaining the circuit in FIG. 2, and FIG. ) shows another embodiment of the present invention, FIG. 5 Tbl shows a diagram for explaining the operation of FIG. 5(a), and FIG. 6A and 6B respectively show diagrams for explaining the operation of FIG. 6+a). In the figure, 3 is a step recovery diode, 12 is a gallium arsenide field effect transistor, 11 and 13 are
indicate capacitors, respectively. 0 O ■ O QL to eight prefecture 8 cheer N C) 0 Q0
Claims (1)
手段で得られたパルス列と超高周波信号とを電界効果型
トランジスタに加えて混合する手段と該混合手段で得ら
れた該低周波信号の高調波成分と該超高周波信号との位
相差に比例した電圧を皐出す手段とからなることを特徴
とするサンプリング位相検波器A means for converting a low frequency signal into a narrow pulse train; a means for adding the pulse train obtained by the converting means and an ultra-high frequency signal to a field effect transistor and mixing the low frequency signal; A sampling phase detector comprising means for generating a voltage proportional to the phase difference between a harmonic component and the ultra-high frequency signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24340183A JPS60134609A (en) | 1983-12-23 | 1983-12-23 | Sampling phase detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24340183A JPS60134609A (en) | 1983-12-23 | 1983-12-23 | Sampling phase detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60134609A true JPS60134609A (en) | 1985-07-17 |
| JPH0157524B2 JPH0157524B2 (en) | 1989-12-06 |
Family
ID=17103310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24340183A Granted JPS60134609A (en) | 1983-12-23 | 1983-12-23 | Sampling phase detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60134609A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119208A (en) * | 1982-01-09 | 1983-07-15 | Sony Corp | Phase detecting circuit |
-
1983
- 1983-12-23 JP JP24340183A patent/JPS60134609A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119208A (en) * | 1982-01-09 | 1983-07-15 | Sony Corp | Phase detecting circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0157524B2 (en) | 1989-12-06 |
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