JPS60133408A - Light junction device - Google Patents
Light junction deviceInfo
- Publication number
- JPS60133408A JPS60133408A JP24242183A JP24242183A JPS60133408A JP S60133408 A JPS60133408 A JP S60133408A JP 24242183 A JP24242183 A JP 24242183A JP 24242183 A JP24242183 A JP 24242183A JP S60133408 A JPS60133408 A JP S60133408A
- Authority
- JP
- Japan
- Prior art keywords
- light guide
- waveguide
- light
- optical waveguide
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
- G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光情報処理、光フアイバ通信・計測等に用い
る光結合装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical coupling device used for optical information processing, optical fiber communication/measurement, etc.
従来例の構成とその問題点
従来、平面基板上に形成された薄膜光導波路に、半導体
レーザあるいは光ファイバを直接結合させる方法として
、第１図に示す様に、薄膜光導波路１の端面を、基板２
のへき開あるいは研磨により導波路１に対しほぼ垂直に
なる様に形成し、この端面に半導体レーザあるいは光フ
ァイバ３の導波路４を接近させて、その導波光６を薄膜
光導波路１中に励振させていた。６は導波路１に導入さ
れた導波光である。しかるに、薄膜光導波路１の構造寸
法が、同一基板２上に形成される他の光回路素子（図示
せず）によって決り、例えば基板２上の他の部分にＰＬ
ＺＴ糸光スイッチを形成した場合では、薄膜光導波路１
の厚さが約０．３６μｍと薄くなり、端面研磨時の光導
波路部の面だけを発生し、励振する半導体レーザあるい
は光ファイバからの光６のスポットサイズの２〜１０μ
ｍに比較して極めて薄くなっており、直接結合による効
率は数％にしかならず、その低効率か問題となっていた
。７．８は放射光、９．１０はそれぞれ導波光６，６の
強度分布を示す。Conventional Structure and Problems Conventionally, as a method for directly coupling a semiconductor laser or an optical fiber to a thin film optical waveguide formed on a flat substrate, as shown in FIG. Board 2
A semiconductor laser or a waveguide 4 of an optical fiber 3 is brought close to this end face, and the guided light 6 is excited into the thin film optical waveguide 1. was. Reference numeral 6 denotes guided light introduced into the waveguide 1. However, the structural dimensions of the thin film optical waveguide 1 are determined by other optical circuit elements (not shown) formed on the same substrate 2, and, for example, if the PL is placed on other parts of the substrate 2,
In the case of forming a ZT fiber optical switch, the thin film optical waveguide 1
The thickness of the optical waveguide is reduced to approximately 0.36 μm, and the spot size of the light 6 from the excited semiconductor laser or optical fiber is 2 to 10 μm.
It is extremely thin compared to M, and the efficiency due to direct coupling is only a few percent, which has been a problem. 7.8 shows the intensity distribution of the emitted light, and 9.10 shows the intensity distribution of the guided lights 6 and 6, respectively.
発明の目的
本発明は、薄膜光導波路と半導体レーザあるいは、光フ
ァイバとの直接結合装置において、高効率な結合装置を
提供することを目的とする。OBJECTS OF THE INVENTION An object of the present invention is to provide a highly efficient direct coupling device between a thin film optical waveguide and a semiconductor laser or an optical fiber.
発明の構成
本発明は、屈折率ｎ８ の基板上に形成された屈折率ｎ
（の第１の光導波路上に、結合用とし１て屈折率ｎ ｇ
（ｎ ｇ≧ｎｆ）を有する第２の光導波路を、その断
面形状が端面から離れるに従い膜厚が減少していく様に
形成し、かつ全体が屈折率ｎａ（ｎ、（ｎｆ）のクラツ
ド材でおおわ拉た光導波路と、その光導波路にほぼ直角
に形成された端面に対向する様に半導体レーザあるいは
光ファイバを配置することより構成さ扛る。Structure of the Invention The present invention provides a substrate with a refractive index n8 formed on a substrate with a refractive index n8.
(on the first optical waveguide of
(n g≧nf) is formed so that its cross-sectional shape decreases in film thickness as it moves away from the end face, and the entire second optical waveguide is made of a clad material with a refractive index na (n, (nf)). It is constructed by arranging a semiconductor laser or an optical fiber so as to face an optical waveguide which is covered with a wafer and an end face formed approximately perpendicular to the optical waveguide.
実施例の説明
第２図に本発明の一実施例を示す。サファイヤ基板２上
に形成した厚さ０．３５μｍのＰＬＺＴ糸光導波光導波
路１率２．６）上に、入力導波路１１として、水素化ア
モルファスシリコン膜〔α−８工：Ｈ（屈折率３．５
） ）をプラズマＣＶＤ法により約２μｍの膜厚に形成
し、エツチングにより先導波路１に重なる様に３次元導
波路形状に加工した。DESCRIPTION OF EMBODIMENTS FIG. 2 shows an embodiment of the present invention. A hydrogenated amorphous silicon film [α-8: H (refractive index: 3 .5
)) was formed to a thickness of approximately 2 μm by plasma CVD, and processed into a three-dimensional waveguide shape by etching so as to overlap the leading waveguide 1.
また、入力導波路１１の形成の際に、マスクを用いて、
ゆるやかなテーパを形成した。テーパ部１２の長さは約
１ＭＭであった。また、α−８工：Ｈの光学ギャップエ
ネルギーは１．８２ｅｖであった。Furthermore, when forming the input waveguide 11, using a mask,
A gentle taper was formed. The length of the tapered portion 12 was approximately 1 mm. Further, the optical gap energy of α-8:H was 1.82 ev.
この様に形成した基板２および導波路２，１１の端部を
サファイヤ基板のやといを用いてダイヤモンド砥粒を用
いて研磨した。入力導波路１１の端部に若干の面だれを
生じたが、膜厚が２μｍと厚いだめにほとんど問題にな
らない程度であった。The ends of the substrate 2 and waveguides 2 and 11 thus formed were polished using a sapphire substrate with diamond abrasive grains. Although some surface sag occurred at the end of the input waveguide 11, it was hardly a problem since the film thickness was as thick as 2 μm.
このようにして得られた導波路に、半導体レーザ（波長
１．３μｍ、ビームサイズ約２μｍ）を直接結合（導波
光５を導波路１，１１に入射させたところ、人力導波路
１１の中１Ｄ付近に半導体レーザの光軸をあわせた時に
最も効率が高く、約３ｄＢの損失におさえることができ
た。この波長でのα−３ｉ：Ｈの光吸収損失はｆヨとん
どみられながった。A semiconductor laser (wavelength 1.3 μm, beam size approximately 2 μm) was directly coupled to the waveguide obtained in this way (when the guided light 5 was made incident on the waveguides 1 and 11, it was found that 1D The efficiency was highest when the optical axis of the semiconductor laser was aligned nearby, and the loss could be suppressed to about 3 dB.The optical absorption loss of α-3i:H at this wavelength is rarely observed. It was.
また、端部での反射による損失が約３Ｏ％あるため、Ａ
Ｒコートを施すことにより、結合損失を１ｄＢ程度に軽
減できた。入力導波路を設けない場合では結合損失が約
１０ｄＢあった。また入力導波路１１のテーパ部での散
乱はほとんどみ牧れなかった。In addition, there is a loss of about 30% due to reflection at the edges, so A
By applying the R coating, the coupling loss could be reduced to about 1 dB. When no input waveguide was provided, the coupling loss was about 10 dB. Further, scattering at the tapered portion of the input waveguide 11 could hardly be observed.
第２図に従ってその原理を若干説明する。半導体レーザ
３からの出射光５の強度分布９のビームサイズ（１／ｅ
２の強度になるビームの輻）が約２μｍのガウス分布を
しており、入力導波路１１の端面付近の基本モード光１
３の強度分布１４とよく整合がとれており、この部分で
の結合損失は極めて少ない。入力導波路１１に励振され
た導波光１３は、テーパ部１２において、光導波路１へ
パワー光強度分布１５の様に結合して、入力導波路１の
終端部ではそのほとんどが、光導波路１へ光パワーが移
っている。その時の強度分布は１６となっている。この
様に、本発明によれば、任意の膜厚を有する薄膜光導波
路と半導体レーザあるいは光ファイバとの低損失の直接
結合が可能となる。The principle will be briefly explained with reference to FIG. The beam size of the intensity distribution 9 of the emitted light 5 from the semiconductor laser 3 (1/e
2) has a Gaussian distribution of approximately 2 μm, and the fundamental mode light 1 near the end face of the input waveguide 11
It matches well with the intensity distribution 14 of No. 3, and the coupling loss in this part is extremely small. The guided light 13 excited in the input waveguide 11 is coupled to the optical waveguide 1 at the tapered portion 12 as shown in the power light intensity distribution 15, and at the terminal end of the input waveguide 1, most of it is coupled to the optical waveguide 1. Light power is being transferred. The intensity distribution at that time is 16. As described above, according to the present invention, it is possible to directly couple a thin film optical waveguide having an arbitrary thickness with a semiconductor laser or an optical fiber with low loss.
なお、実施例において、光導波路１にサファイヤ基板上
のＰＬＺＴ系薄膜光薄膜光導波路たが、何もこれに限る
ことなく、導波機能を有するどの様な薄膜光導波路でも
よい。まだ、入力導波路材料にα−８ｉ ：Ｈを用いた
が例もこれに限定する必要はなく、光導波路１の屈折率
より等しいか大きい材料であれば伺でもよい、また、半
導体レーザの代シに光ファイバを用いても同様な効果が
得ら扛、かつ、その場合には、光導波路からの出力結合
用としても、低損失の結合がｈ」能である。In the embodiment, the optical waveguide 1 is a PLZT thin film optical waveguide on a sapphire substrate, but is not limited to this, and any thin film optical waveguide having a waveguide function may be used. Although α-8i:H is used as the input waveguide material, there is no need to limit the example to this, and any material may be used as long as the refractive index is equal to or larger than the refractive index of the optical waveguide 1. A similar effect can be obtained by using an optical fiber instead, and in that case, low-loss coupling is also possible for output coupling from the optical waveguide.
また、薄膜光導波路１および入力導波路１１は屈折率”
ａ（”ａ＜ｎｆ ）のクラツド材でおおわれてお９、こ
のクラツド材はその機能を満たす範囲内で例でもよく、
例えば空気、 ＳｉＯ□、Ｔｉｅ、、等々でもよい。Furthermore, the thin film optical waveguide 1 and the input waveguide 11 have a refractive index "
It is covered with a cladding material of a ("a<nf)9, and this cladding material may be any other material as long as it satisfies its function,
For example, air, SiO□, Tie, etc. may be used.
発明の効果
本発明により、従来１０ｄＢ以上程度あった薄膜光導波
路と半導体レーザあるいは光ファイバとの直接結合損失
が、１（ｉＢ程度に軽減することが可能となった。Effects of the Invention According to the present invention, the direct coupling loss between a thin film optical waveguide and a semiconductor laser or an optical fiber, which was conventionally about 10 dB or more, can be reduced to about 1 (iB).
第１図は従来の光結合部を示す断面図、第２図は本発明
の一実施例の光結合部を示す断面図である。
１・・・・・・薄膜光導波路、２・・・・・・基板、３
・・・・・・半導体レーザあるいは光ファイバ、４・・
・・・・光導波路、６．１３・パ・・・導波光、１４，
１５．１６・・・・・・導波光強度分布、１１・・・・
・・入力導波路、１２・・・・・・テーパ部。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
Ｉ ；りFIG. 1 is a sectional view showing a conventional optical coupling section, and FIG. 2 is a sectional view showing an optical coupling section according to an embodiment of the present invention. 1... Thin film optical waveguide, 2... Substrate, 3
... Semiconductor laser or optical fiber, 4...
...Optical waveguide, 6.13・P... Waveguide light, 14,
15.16... Waveguide light intensity distribution, 11...
...Input waveguide, 12...Tapered part. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure I;
Claims (2)
ｎｆ（ｎｆ＞ｎｓ）を有する第１の光導波路上に、屈折
率ｎ ｇ （ｎ ？” ｆ）を有する第２の光導波路が
形成され、かつ、前記第２の光導波路の断面形状が端面
から離れるにしたがい膜厚が減少していく様な構造を有
する光導波路を備えてなる光結合装置。(1) A second optical waveguide having a refractive index n g (n?”f) is formed on a first optical waveguide having a refractive index nf (nf>ns) formed on a substrate having a refractive index ns. 1. An optical coupling device comprising an optical waveguide having a structure in which the cross-sectional shape of the second optical waveguide decreases in film thickness as the distance from the end face increases.
とを特徴とする特許請求の範囲第１項記載の光結合装置
。(2) The optical coupling device according to claim 1, wherein the end face of the optical waveguide is covered with an antireflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24242183A JPS60133408A (en) | 1983-12-22 | 1983-12-22 | Light junction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24242183A JPS60133408A (en) | 1983-12-22 | 1983-12-22 | Light junction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60133408A true JPS60133408A (en) | 1985-07-16 |
Family
ID=17088860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24242183A Pending JPS60133408A (en) | 1983-12-22 | 1983-12-22 | Light junction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60133408A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6394205A (en) * | 1986-10-09 | 1988-04-25 | Hitachi Ltd | Optical excitation device for bidirectional transmission |
| JPH01273239A (en) * | 1988-04-25 | 1989-11-01 | Sony Corp | Optical reproducing pickup |
| JPH02109007A (en) * | 1988-10-19 | 1990-04-20 | Sanyo Electric Co Ltd | Optical waveguide device |
| EP0687925A2 (en) | 1994-06-08 | 1995-12-20 | Hoechst Aktiengesellschaft | Method of forming an optical coupling waveguide and a lightguide device having the optical coupling waveguide |
| EP0695958A1 (en) * | 1994-08-04 | 1996-02-07 | Hoechst Aktiengesellschaft | Tapered waveguide for optical coupling |
| JP2001330763A (en) * | 2000-03-15 | 2001-11-30 | Hoya Corp | Condenser parts as well as light source module, laser device and signal amplifier device using the same |
-
1983
- 1983-12-22 JP JP24242183A patent/JPS60133408A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6394205A (en) * | 1986-10-09 | 1988-04-25 | Hitachi Ltd | Optical excitation device for bidirectional transmission |
| JPH01273239A (en) * | 1988-04-25 | 1989-11-01 | Sony Corp | Optical reproducing pickup |
| JPH02109007A (en) * | 1988-10-19 | 1990-04-20 | Sanyo Electric Co Ltd | Optical waveguide device |
| EP0687925A2 (en) | 1994-06-08 | 1995-12-20 | Hoechst Aktiengesellschaft | Method of forming an optical coupling waveguide and a lightguide device having the optical coupling waveguide |
| EP0695958A1 (en) * | 1994-08-04 | 1996-02-07 | Hoechst Aktiengesellschaft | Tapered waveguide for optical coupling |
| US5568579A (en) * | 1994-08-04 | 1996-10-22 | Hoechst Aktiengesellschaft | Waveguide coupling device including tapered waveguide with a particular tapered angle to reduce coupling loss |
| JP2001330763A (en) * | 2000-03-15 | 2001-11-30 | Hoya Corp | Condenser parts as well as light source module, laser device and signal amplifier device using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2708767C (en) | Coupling between free space and optical waveguide using etched coupling surfaces | |
| US6511571B2 (en) | Method for fabricating an optical waveguide | |
| JPH01260405A (en) | Optical fiber | |
| JPS575380A (en) | Output light coupling system for semiconductor laser | |
| JPH09506720A (en) | Spatial filters for improving the polarization extinction ratio of proton exchange waveguide devices | |
| EP0212773A2 (en) | Cutoff polarizer and method | |
| US4398795A (en) | Fiber optic tap and method of fabrication | |
| Benson | Etched-wall bent-guide structure for integrated optics in the III-V semiconductors | |
| JPS60133408A (en) | Light junction device | |
| Willner et al. | Laser fabricated GaAs waveguiding structures | |
| US4124270A (en) | Monolithic, three-dimensional infrared waveguide for high power lasers | |
| JP3223930B2 (en) | Optical device | |
| JP3666463B2 (en) | Optical waveguide device and method for manufacturing optical waveguide device | |
| JPH05107428A (en) | End structure of optic fiber and manufacture thereof | |
| JPH0743552A (en) | Optical waveguide element for coupling semiconductor laser diode and waveguide type module using the same | |
| JPS62296102A (en) | Waveguide grating coupler | |
| JPH0560928A (en) | Waveguide type spot size converting element | |
| JP2000321470A (en) | Optical fiber and laser machining apparatus | |
| JPS58196521A (en) | Optical coupling circuit | |
| JP6927094B2 (en) | Optical waveguide connection structure | |
| JPS5838621Y2 (en) | Laser light source | |
| JPH08146250A (en) | Condenser lens and its production | |
| JPH05196825A (en) | Input/output structure of light guide | |
| JPH02168206A (en) | Refractive index distribution coupler | |
| JPH0996745A (en) | Semiconductor laser module |