JPS60131963A - Target plate for sputtering - Google Patents
Target plate for sputteringInfo
- Publication number
- JPS60131963A JPS60131963A JP23992383A JP23992383A JPS60131963A JP S60131963 A JPS60131963 A JP S60131963A JP 23992383 A JP23992383 A JP 23992383A JP 23992383 A JP23992383 A JP 23992383A JP S60131963 A JPS60131963 A JP S60131963A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- target plate
- powder
- pressure
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
Description
【発明の詳細な説明】
この発明は、スパッタリング用ターケ゛ット板に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a target plate for sputtering.
電子工業、電気工業等の分野で用いられるＢｉ。Bi is used in fields such as electronic industry and electrical industry.
８ｅ 、 Ｔｅ 、Ｓｂ 、 Ｉｎ 、 Ｓｎ等の金属
または半金属あるいはこれらの合金の薄膜は、一般に真
空蒸着法ま１こはスフ４ツタリング法によって基板上へ
形成される。A thin film of a metal or semimetal, such as 8e, Te, Sb, In, Sn, or an alloy thereof, is generally formed on a substrate by a vacuum evaporation method or a four-layer sintering method.
ところで、上記スパッタリング時法いられるテルルもし
くはテルル合金等のターケ８ット板は、従来前記金属等
を真空中や不活性ガス中で溶融し、鋳型に鋳造する鋳造
法や前記金属等の粉末を押型で高い成形圧下で加圧成形
後、加熱して焼結する。By the way, the tarquet plate made of tellurium or tellurium alloy, etc., which is used in the sputtering process, has conventionally been produced by a casting method in which the metal is melted in a vacuum or in an inert gas and cast into a mold, or by a powder of the metal, etc. After pressure forming under high molding pressure with a press mold, it is heated and sintered.
コールドプレス法で製造されている。Manufactured using the cold press method.
しかし、鋳造法では、上記金属等の蒸気圧が高いため製
造中、蒸発量が多く歩留りが低下する問題、及び、これ
ら蒸気は有毒なので、除害や安全上に問題がある。また
、鋳造した金属等は、ガラス質のため製造時の冷却やス
パッタリング時の発熱に伴って割れやガス発生が生じ易
い問題がある。However, in the casting method, since the vapor pressure of the above-mentioned metals is high, the amount of evaporation during production is large, resulting in a decrease in yield.Also, since these vapors are toxic, there are problems in terms of abatement and safety. Furthermore, since cast metals are glassy, they tend to crack or generate gas when cooled during manufacturing or generated during sputtering.
さらに、１コールドプレス法は、高密度焼結体を得るに
は高い成形圧が必要であり圧縮性の悪い粉体に対しては
押型Ｊ、り取り出す際に圧縮割れやスプリングバックに
よって割れる危険性が高い。そして、蒸気圧の高い金属
等葡焼結させるには、表面積が大きいので黒画ロスが多
いなどの問題がある。Furthermore, the cold pressing method requires high compacting pressure to obtain a high-density sintered body, and there is a risk of cracking due to compression cracking or springback when removing the powder from the press die. is high. When sintering metals with high vapor pressure, there are problems such as a large amount of black loss due to the large surface area.
この発明は、以上の点に鑑みてなされたものであって、
すなわちテルル粉末あるいはテルル合金粉末を加圧下で
成形焼結し、密度比勿７０〜９０チに調整することに、
Ｊ：９強い曲げ強さを有して割れにくいテルルもしくは
テルル合金よりなるスパッタリング用ターダット板？提
供するものである。This invention was made in view of the above points, and
That is, by molding and sintering tellurium powder or tellurium alloy powder under pressure and adjusting the density ratio to 70 to 90 inches,
J:9 A TARDAT board for sputtering made of tellurium or tellurium alloy that has strong bending strength and is hard to break? This is what we provide.
ここで、密度比とは、金属の真比重に対する焼結体の見
掛密度の百分比ｒいう。Here, the density ratio refers to the percentage ratio r of the apparent density of the sintered body to the true specific gravity of the metal.
加圧成形ν工び焼結は通常行われる粉末冶金的方法で良
いが、比較的低い成形圧で粉体勿加圧成形したのちに、
加圧下で焼結する方が一般に好結果が得られる。Pressure molding and sintering can be carried out by the commonly used powder metallurgy method, but after pressure molding the powder at a relatively low molding pressure,
Sintering under pressure generally gives better results.
加圧子焼結のためには、圧縮焼結法あるいはホットプレ
ス法があるが、粉体會充填した押型全加熱する際の熱膨
張や熱歪み全利用して加圧子焼結ケ実施する方法も簡便
な方法である。There are compression sintering methods and hot press methods for sintering the indenter, but there is also a method of sintering the indenter by fully utilizing the thermal expansion and thermal strain that occurs when the powder-filled mold is fully heated. This is a simple method.
焼結温度は原料の融点の帆７５〜０．９５倍、好ましく
は帆９倍がよく、テルルターゲツト板製造の際の焼結温
度は３４０〜４３０℃、好ましくは４１０℃とする。The sintering temperature is preferably 75 to 0.95 times, preferably 9 times, the melting point of the raw material, and the sintering temperature in manufacturing the tellurium target plate is 340 to 430°C, preferably 410°C.
第１６結時の雰囲気は水素あるいはアルゴン雰囲気とす
ることが望ましい。The atmosphere during the 16th condensation is preferably a hydrogen or argon atmosphere.
以下、実施例に基づいてこの発明ケ説明する。Hereinafter, this invention will be explained based on examples.
市販されているテルルノヨツ） ｆ −ｅｆｏ ｍｅｓ
ｈであり、７Ｊｓつ−３２５ｍｅｓｈの比率が４０％程
度となる工うに粉砕し１こテルル粉末ｒ、所足の形状た
とえば薄肉厚の円盤状に成形圧力１０〜５００ Ｋｆ／
讐好ましくは１５０〜２５０ Ｋｙ／−において加圧成
形したのち、加圧下で焼結することにＪ：ｖ密度比７０
〜９０％の焼結体とした。密度比ｔ７０〜９０チとする
理由は、密度比７０％以下では曲げ強さが弱く、９０チ
以上では気孔が少なくなるのでクラックが発生し易く、
且つ気孔が閉鎖されたものとなり通気孔とならないので
ス・ぐツタリング時に割れやガスが発生しやすくなるか
らである。本発明に係るターゲツト板は１強い曲げ強さ
葡有し、割れにくいものとなっているので、スノクツタ
リング時に急熱されても割れやガスの発生がなく、ター
ケ゛ット板として良好な性状葡有している。Commercially available terurunoyotsu) f-efo mes
Grind one piece of tellurium powder so that the ratio of 7Js-325mesh is about 40%, mold it into the desired shape, for example, a thin-walled disc, and press at a pressure of 10 to 500 Kf/
The J:v density ratio is preferably 70 after pressure forming at 150 to 250 Ky/- and sintering under pressure.
~90% sintered body. The reason why the density ratio t is 70 to 90 inches is that if the density ratio is less than 70%, the bending strength will be weak, and if it is more than 90 inches, the number of pores will decrease and cracks will easily occur.
In addition, since the pores are closed and do not function as ventilation holes, cracks and gas are likely to occur during suctioning. The target board according to the present invention has a high bending strength of 1 and is not easily cracked, so even when it is rapidly heated during snow cutting, it does not crack or generate gas, and has good properties as a target board. are doing.
次に、本発明に係るスノヤツタリング用ターゲットと、
高圧圧縮成形常圧焼結したターゲツト板の物性値の測定
比較を表−１に示す。Next, a snowyearing target according to the present invention,
Table 1 shows a comparison of the measured physical properties of target plates that were subjected to high-pressure compression molding and pressureless sintering.
本発明に係るターゲツト板においては、押型に装填され
た粉末’１１５８Ｋｇ／冨の成形圧で圧縮成形したのち
、水素雰囲気中で４１０℃において加圧焼結することに
よって製造した。一方、従来法に明刹書の６）書（内容
に変更なし）
する萬圧圧縮成形常圧焼結ターｒット板においては、粉
末ｗ ５００ Ｋｔｉ−の成形圧で常温において圧縮し
て成形体を製造し、水素雰囲気中で４１０℃において常
圧下で焼結し友。The target plate according to the present invention was produced by compression molding the powder loaded in a mold at a molding pressure of 1,158 kg/powder, followed by pressure sintering at 410° C. in a hydrogen atmosphere. On the other hand, in the case of conventional pressure compression molded pressureless sintered tart plates, which are based on the conventional method according to 6) of the Meijisho (no change in content), the powder is compressed and molded at room temperature with a molding pressure of 500 Kti-. The body was manufactured and sintered at 410°C under normal pressure in a hydrogen atmosphere.
なお、υ６給する粉末としては１両省とも一６０ｍｅｓ
ｈでＰ ツー ３２５ ｍｅｓｈの比率が４０１程度と
なる工うに粉砕されたテルルの粉末ｒ使用した。ま７ζ
。In addition, the powder that supplies υ6 is 160 mes in both provinces.
Tellurium powder was used which had been ground to give a ratio of P to 325 mesh of about 401. Ma7ζ
.
物性値のうち１曲は強さは、炭素協会規格ＪＣＡＳ−１
０−１９６８−４４Ｋｍつて測定ｔ、、 密ｉ比はＪｌ
ｓＺ２５００−３１９に準じ訓足を行ない評価を竹なつ
１ζ、表−１
表−１〃）ら判るＬうに、この発明に係るターゲツト板
は、従来の方法に１９焼結し１ζターゲツト板に比べて
、成形圧で１／３と低いにも刀＞ｐ＞わらず曲げ強さは
２０倍以上となっており、刀）つ密度比においても同等
以上の値が得られている。One of the physical property values is strength, which is based on the Carbon Society standard JCAS-1.
Measured at 0-1968-44Km, the density ratio is Jl
As can be seen from Table 1), the target plate according to the present invention has a 1ζ target plate that is sintered using the conventional method. Even though the molding pressure was 1/3 lower, the bending strength was more than 20 times higher than the previous one, and the same or higher value was obtained for the density ratio.
なおターケ゛ット板の原料としては、テルル粉末に限ら
すテルル合金の粉末も用いられる。Note that the raw material for the target plate is not limited to tellurium powder, but also tellurium alloy powder.
以上説明し′ｆｃように、本発明に係るスノソツタリン
グ用ターゲット板は、テルルもしくはテルル合金の粉末
の加圧成形焼結に工って製造され、密度比７０〜９０％
で強い曲げ強さヶ有し、スノやツタリング時に急熱して
も割れやガスの発生がなくス／Ｊ’ツタリング作業を確
実に行なえる効果がある。As explained above, the target plate for snow sottering according to the present invention is manufactured by pressure molding and sintering of tellurium or tellurium alloy powder, and has a density ratio of 70 to 90%.
It has strong bending strength and does not crack or generate gas even if it heats up rapidly during snowing or tsuttering, making it possible to reliably perform tsuttering work.
また、焼結法であるので、溶製法に比して揮発ロスが少
なくてすむ利点がある。Furthermore, since it is a sintering method, it has the advantage of less volatilization loss compared to the melting method.
特許出願人 日本鉱業株式会社
手続補正書（方幻
特許庁長官 若杉 和犬 殿
１ 事件の表示
昭和５８年特許願第２３９９２３号
２ 発明の名称
スパッタリング用ターゲツト板
３ 補正をする者
事件との関係 特許出願人
住所 東京都港区虎）門二丁目ｌＯ′＃ｒ１号代表取締
役社長 Ｖ誠 苗に
４ 代理人
住所 〒１０５
東京都港区虎ノ門１丁目１９番１４号
昭和５９年３月７日（発送日昭和５９年３月２７１）６
補正により増加する発明の数 ０
７ 補正の対象 明細書第５頁
８ 補正の内容 別紙の通り全文補正する。Patent Applicant Nippon Mining Co., Ltd. Procedural Amendment (Hogen Patent Office Commissioner Wanu Wakasugi) 1 Display of the case Patent Application No. 239923 filed in 1982 2 Name of the invention Target plate for sputtering 3 Person making the amendment Relationship to the case Patent Applicant Address: 1-19-14 Toranomon, Minato-ku, Tokyo Representative Director and President: V Makoto Naeni 4 Address: 1-19-14 Toranomon, Minato-ku, Tokyo March 7, 1980 (shipped March 1982 271) 6
Number of inventions increased by amendment 0 7 Target of amendment Page 5 of the specification 8 Contents of amendment The entire text shall be amended as shown in the attached sheet.
Claims (1)
たのち、焼結して密歴比を７０〜９０％の間に調整した
ことケ特徴とするスパッタリング用ターケゝット板。(1) A target plate for sputtering, characterized in that a tellurium or tellurium alloy powder is press-molded and then sintered to adjust the density ratio between 70 and 90%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23992383A JPS60131963A (en) | 1983-12-21 | 1983-12-21 | Target plate for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23992383A JPS60131963A (en) | 1983-12-21 | 1983-12-21 | Target plate for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60131963A true JPS60131963A (en) | 1985-07-13 |
| JPH0344145B2 JPH0344145B2 (en) | 1991-07-05 |
Family
ID=17051853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23992383A Granted JPS60131963A (en) | 1983-12-21 | 1983-12-21 | Target plate for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60131963A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6213569A (en) * | 1985-07-10 | 1987-01-22 | Mitsubishi Metal Corp | Sintered te or te alloy target for sputtering |
| JPS62148362A (en) * | 1985-12-24 | 1987-07-02 | 三菱マテリアル株式会社 | Manufacture of target material for sputtering |
| JPS6348632A (en) * | 1986-08-18 | 1988-03-01 | Matsushita Electric Ind Co Ltd | Manufacture of optical information recording and reproducing disk |
| JPS63143258A (en) * | 1986-12-05 | 1988-06-15 | Mitsubishi Metal Corp | Sputtering target |
| JPH02170969A (en) * | 1988-12-23 | 1990-07-02 | Mitsubishi Metal Corp | Manufacture of target material |
-
1983
- 1983-12-21 JP JP23992383A patent/JPS60131963A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6213569A (en) * | 1985-07-10 | 1987-01-22 | Mitsubishi Metal Corp | Sintered te or te alloy target for sputtering |
| JPS6328987B2 (en) * | 1985-07-10 | 1988-06-10 | Mitsubishi Metal Corp | |
| JPS62148362A (en) * | 1985-12-24 | 1987-07-02 | 三菱マテリアル株式会社 | Manufacture of target material for sputtering |
| JPS6348632A (en) * | 1986-08-18 | 1988-03-01 | Matsushita Electric Ind Co Ltd | Manufacture of optical information recording and reproducing disk |
| JPH0752527B2 (en) * | 1986-08-18 | 1995-06-05 | 松下電器産業株式会社 | Optical information recording / reproducing disk manufacturing method |
| JPS63143258A (en) * | 1986-12-05 | 1988-06-15 | Mitsubishi Metal Corp | Sputtering target |
| JPH02170969A (en) * | 1988-12-23 | 1990-07-02 | Mitsubishi Metal Corp | Manufacture of target material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0344145B2 (en) | 1991-07-05 |
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