JPS60119764U - thermoelectric generator - Google Patents

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図並びに第２図は従来例の斜視図、第３図は本考案
の要部分解斜視図、第４図は同全体斜視図、第５図は第
４図のＸ視拡犬図、第６図は同要部切欠断面せる側面図
である。 ５・・・素子体、６・・・Ｐ型半導体、７・・・Ｎ型半
導体、９・・・間隔、１０・・・導電部材、１１・・・
絶縁部材、１２・・・固定具（固定手段）。1 and 2 are perspective views of the conventional example, FIG. 3 is an exploded perspective view of essential parts of the present invention, FIG. 4 is an overall perspective view of the same, and FIG. FIG. 6 is a side view showing a cutaway section of the same essential part. 5... Element body, 6... P-type semiconductor, 7... N-type semiconductor, 9... Spacing, 10... Conductive member, 11...
Insulating member, 12... fixing tool (fixing means).

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 金属ケイ化物Ｐ型半導体とＮ型半導体とを結合して略Ｕ
字状に形成され、互いに結合側端部を同方向にし、Ｐ型
半導体とが対向し、かつ間隔を存して厚さ方向に積層さ
れる複数の素子体と、これ゛　　等素子体の反結合側端
部を電気的に直列接続する導電部材と、同反結合側端部
の上記間隔を埋める絶縁部材と、前記複数の素子体の反
結合側端部を絶縁材と共に固定する固定手段とからなる
熱発電素子。A metal silicide P-type semiconductor and an N-type semiconductor are combined to form approximately U.
A plurality of element bodies formed in a letter shape, with their coupling side ends in the same direction, facing a P-type semiconductor, and stacked in the thickness direction with a gap between them, and the opposite side of these element bodies. a conductive member that electrically connects the coupling side ends in series; an insulating member that fills the gap between the same and anticoupling side ends; and a fixing means that fixes the anticoupling side ends of the plurality of element bodies together with the insulating material. A thermoelectric power generation element consisting of.