JPS60116769A - Vapor deposition device - Google Patents

Vapor deposition device

Info

Publication number
JPS60116769A
JPS60116769A JP22608583A JP22608583A JPS60116769A JP S60116769 A JPS60116769 A JP S60116769A JP 22608583 A JP22608583 A JP 22608583A JP 22608583 A JP22608583 A JP 22608583A JP S60116769 A JPS60116769 A JP S60116769A
Authority
JP
Japan
Prior art keywords
evaporation
crucible
treated
chip
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22608583A
Other languages
Japanese (ja)
Other versions
JPH0369990B2 (en
Inventor
Tsunekiyo Kobayashi
小林　常清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP22608583A priority Critical patent/JPS60116769A/en
Publication of JPS60116769A publication Critical patent/JPS60116769A/en
Publication of JPH0369990B2 publication Critical patent/JPH0369990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To avoid the interruption of an evaporation state, and to send only an evaporation material which is completely gassified to a material to be treated by providing a shielding plate in a vessel wherein the evaporation material is melted in a continuous vapor deposition device capable of supplying successively the evaporation material to an evaporation source. CONSTITUTION:A belt-shaped material 1 to be treated is continuously supplied into a vacuum vessel in the direction (a), and the vecuum vapor deposition of Al is carried out. An Al chip 8 is thrown into a crucible 2 at the lower position of the material 1 to be treated, and the molten part is formed by heating with an electron beam 3 and further evaporated. A shutter 5 provided between an evaporation source 4 and the material 1 is closed until the evaporation of the Al becomes stationary to avoid the deposition of the evaporated material on the material 1 to be treated. The supply of the chip 8 into the crucible 2 is carried out by rotating a rotor 9, and the chip 8 charged into a hopper 7 is sent into the crucible. The vicinity of the position where the replenished chip 8 is melted is covered with a shielding plate 11 to prevent the deposition of the evaporated substance and the splash of Al, etc. on the material to be treated 1.

Description

【発明の詳細な説明】 （ａｌ　発明の技術分野 本発明は蒸発源への蒸発材料供給を順次行ない連続蒸着
が可能な蒸着装置の構造に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to the structure of an evaporation apparatus capable of continuous evaporation by sequentially supplying evaporation material to an evaporation source.

（ｂｌ　技術の背景 金属被膜を所望部に被着させる方法として真空蒸着や減
圧中で金属被膜を被着させる方法が広く用いられるよう
になってきており、最近ではバッチ式の他に一定量の被
処理物を連続的に順次送り込んで金属被膜を被着させる
大量の生産ができる装置も製作されている。(bl Background of the technology) Vacuum deposition and methods of depositing metal films under reduced pressure have become widely used as methods for depositing metal films on desired areas. An apparatus capable of mass production in which metal coatings are deposited by continuously feeding objects to be treated one after another has also been manufactured.

これらの装置で蒸発源から被着する材料を蒸発させて金
属被膜を得る方式におし）で番よ、順次連Ｕ９的に送り
込だ被処理物に均一で均質な被膜を１昇るために蒸発源
からは一定の蒸発速度で連続して蒸発させ、しかも能率
を向上させるには蒸発速度を早くする必要があり、この
ため品質の良し）蒸発物を安定して長時間大量に供給す
ることができる蒸発機構が要望されている。These devices are used to evaporate the material deposited from the evaporation source to obtain a metal coating), in order to form a uniform and homogeneous coating on the workpiece that is sequentially fed in a continuous manner. It is necessary to evaporate continuously from the evaporation source at a constant evaporation rate, and in order to improve efficiency, the evaporation rate must be high, so that the evaporated material can be stably supplied in large quantities for a long time. There is a need for an evaporation mechanism that can do this.

（Ｃ１従来技術と問題点 真空蒸着法を含む減圧中における金属被膜の被着方法に
おいて、蒸発源から金属を蒸発させて製品へ被着させる
方法があり、蒸発源Ｇよ固体の被着材料を溶融して溶湯
とし更に気化させて蒸発物として製品へ被着させる。そ
して蒸発源からの蒸発量を大量に必要とする場合にはル
ツボ内に一定量の材料を入れておき加熱して材料を蒸発
させなめ（ら蒸発量に見合ってルツボ内に設けたワイヤ
ーを供給するワイヤーフィード方式で行う力１又番よ？
乱数のルツボを設けて順次加熱して必要量を確保１−る
ようにている。(C1 Prior art and problems) Among methods for depositing metal films under reduced pressure, including vacuum evaporation, there is a method in which the metal is evaporated from an evaporation source and deposited on the product. It is melted into a molten metal, further vaporized and deposited on the product as an evaporated substance.If a large amount of evaporation from the evaporation source is required, a certain amount of material is placed in a crucible and heated to evaporate the material. Evaporation is performed using a wire feed method that supplies a wire set in the crucible according to the amount of evaporation.
Crucibles with random numbers are provided and heated in sequence to ensure the required amount.

蒸発物を目的の製品に被着させる場合゛に蒸発源となる
材料を固体−液体一気体として蒸気で被着させる示この
溶融過程が急激に行なわれた場合に、は材料に含まれる
成分や含有ガス又はイ」着成分のガス化の状態によって
これに起因して材料の溶融時に突沸が起こり竿体の飛沫
を飛散さ・Ｕるのでそれが製品に被着した場合に突出し
た粒と般るので被膜としての目的が達せられないなどの
欠点となる。When depositing the evaporated material on the target product, the material used as the evaporation source is deposited as a vapor in the form of a solid-liquid gas.If this melting process is carried out rapidly, the components contained in the material and Due to the state of gasification of the contained gas or the adhesion component, bumping occurs when the material melts, scattering droplets from the rod body, and when it adheres to the product, protruding particles and general This results in drawbacks such as the inability to achieve the purpose of the coating.

この防止方法として加熱した金属網を蒸爬源と処理物（
製品）の中間に設けて飛沫が製品に被着しないようにす
る方法が提案されている。しかしこの方法では長時間に
わたって使用する場合には網の材質と蒸発物が合金をつ
くりついには溶けてしまったりするので交換して使用す
る必要があり網の維持が困難であるという欠点がある。To prevent this, a heated metal net is used as the distillation source and the processed material (
A method has been proposed to prevent droplets from adhering to the product by installing it between the products (products). However, this method has the disadvantage that when used for a long time, the material of the net and the evaporated material form an alloy and eventually melt, making it necessary to replace the net and making it difficult to maintain the net.

又ルツボを用いて蒸発源をルツボ中で溶融し更に蒸発さ
せる場合に溶融初期に起こる飛沫の被着を防ぐため製品
の蒸発部との中間にカバーを設けて一定に溶融してから
カバーをはずして蒸発させている。In addition, when using a crucible to melt the evaporation source in the crucible and further evaporate it, in order to prevent the adhesion of droplets that occur during the early stages of melting, a cover is provided between the product and the evaporation part, and the cover is removed after the product has been melted to a constant level. and evaporate it.

しかし以降の蒸発源の補充をワイヤ材を連続的□に挿入
する方法にあってはワイヤ材の溶融が連続的に行なわれ
るため突沸による飛沫の被着に留意するため溶解速度を
ゆっくり行うので高速度の蒸発を連続的に行う場合に不
向きであり、また材料の厳選が必要となり経済的でない
。However, in the subsequent method of replenishing the evaporation source by continuously inserting wire material into the □, the wire material is melted continuously, and the melting rate is slow to avoid adhesion of droplets due to bumping, so the melting rate is slow. It is not suitable for continuous high-speed evaporation, and requires careful selection of materials, making it uneconomical.

又複数のルツボと順次加熱部へ送り込んで蒸発させる方
式では材料のｆ４融初期にカバーをすることが必要で蒸
発が断続的になり一定の連続蒸発を行うのに不向きであ
る。Furthermore, in the method of evaporating materials by sequentially feeding them into a heating section with a plurality of crucibles, it is necessary to cover the material at the beginning of f4 melting, which results in intermittent evaporation, which is not suitable for performing constant continuous evaporation.

（ｄ）　発明の目的 本発明は蒸発源からの蒸発量を多くするため一定量の容
積のルツボ内に蒸発させる材料を入れ熱源で加熱蒸発さ
せる方式においてルツボ内に順次材料を補給する場合に
蒸発状態を中断せずに又製品への被着物が蒸発源から完
全に気化したものだけが到達するようにするための材料
の連続供給における構造及び方式を提供することを目的
とする。(d) Purpose of the Invention The present invention aims to increase the amount of evaporation from the evaporation source by placing the material to be evaporated in a crucible with a certain volume and heating and evaporating it with a heat source. It is an object of the present invention to provide a structure and method for continuous supply of material without interrupting the conditions and in such a way that only completely vaporized material is deposited on the product from the evaporation source.

（ｅｌ　発明の構成 本発明の上記目的は、固形体が順次熔解する部所のイ］
近からの蒸発物が直接処理物に被着しないよう真空容器
内遮蔽板に設けた蒸着装置の提供により達成できる。(El Structure of the Invention The above object of the present invention is to provide a portion where the solid body is sequentially melted)
This can be achieved by providing a vapor deposition device that is installed on a shielding plate inside the vacuum container so that evaporated substances from nearby areas do not directly adhere to the processed material.

（ｆ）　発明の実施例 以下本発明の実施例を図面に沿って説明する。(f) Examples of the invention Embodiments of the present invention will be described below with reference to the drawings.

第１図はＡＩ被被膜被着する真空蒸着の装置内部を図示
したもので本発明を説明する模式図である。図において
、１は矢印ａ方向に連続供給される処理物（例えば金属
板材４２７０イの帯状）。FIG. 1 is a schematic diagram illustrating the inside of a vacuum evaporation apparatus for depositing an AI film, and is for explaining the present invention. In the figure, reference numeral 1 denotes a processed material (for example, a strip of metal plate material 4270) that is continuously supplied in the direction of arrow a.

２はＣｕからなるルツボで水冷却２ａ′？：冷却され源
、５は可動シャッタ、６は秤料供給装置、７は蒸発材料
ＡＩの補給用ホッパー、８は補給材の回船状ＡＩチップ
、９は送り込み用のロータ、１０は移送用のガイドであ
る。2 is a crucible made of Cu and water-cooled 2a'? : Cooled source, 5 is a movable shutter, 6 is a weighing material supply device, 7 is a hopper for replenishing evaporated material AI, 8 is a ship-shaped AI chip for replenishment material, 9 is a rotor for feeding, 10 is for transfer It is a guide.

また１１が本発明の特徴である材料補給部からの飛散物
が直接製品へ被着しないようにする遮蔽板である。Further, numeral 11 is a shielding plate that prevents scattered objects from the material replenishment section from directly adhering to the product, which is a feature of the present invention.

尚、上記のものは真空装置の容器内に設けられる（真空
度ｌＸｌ０　Ｔｏｒｒ程度）。第１図の装置で真空容器
内に処理物１　（例えば４２アロイ寸法０．２５ｔＸ幅
１０ＱｍｓＸ長さｌの帯条）を送り込んでＡＩの真空蒸
着を行う場合に、処理物供給は帯条の送り込み及びこれ
に連動とする巻き取り装置により蒸着領域へ連続的に送
り込むようにし送り込み前段部では必要に応じて予備加
熱３００〜５００℃を行う。Incidentally, the above-mentioned device is provided in a container of a vacuum device (degree of vacuum is approximately 1X10 Torr). When performing vacuum deposition of AI by feeding the processing material 1 (for example, a strip of 42 alloy size 0.25t x width 10Qms x length l) into the vacuum container using the apparatus shown in Fig. 1, the processing material is supplied by feeding the strip. The material is continuously fed into the vapor deposition region by a winding device interlocked therewith, and preheating is performed at 300 to 500° C. as necessary in the pre-feeding section.

□蒸発機構はその処理する帯条の下方位置にルツボ２を
設け、これにＡＩチップ８を投入しておきこれを電子ビ
ーム３で加熱して溶湯部分ができるようにし、更に熔湯
部からＡＩが蒸発するに必要なエネルギーを供給して蒸
発させる。又金属ルツボが溶けたＡＩと合金を作らない
ようにするために水冷却２ａに冷却水を流しておきルツ
ボに接する部分のＡＩの一部をも溶けない状態に保って
おく。そしてＡＩの溶湯ができる初期にはシャッタ５を
蒸発源４と処理物１の間に設けて蒸発物が被着しないよ
うに配慮するが、ＡＩの蒸発を定常状態にした後はシャ
ック５を開けておくようにする。□The evaporation mechanism is provided with a crucible 2 below the strip to be processed, into which an AI chip 8 is placed and heated by an electron beam 3 to form a molten metal portion, and then from the molten portion to the AI chip 8. evaporates by supplying the energy necessary for it to evaporate. Also, in order to prevent the metal crucible from forming an alloy with the melted AI, cooling water is allowed to flow through the water cooling 2a to keep a portion of the AI in contact with the crucible unmelted. At the initial stage when the molten AI is formed, a shutter 5 is installed between the evaporation source 4 and the processed material 1 to prevent evaporated matter from adhering to it, but after the evaporation of AI has reached a steady state, the shack 5 is opened. Make sure to keep it.

ルツボへのＡｌの供給は材料補給用のホッパ７内にＡ１
のチップ８を入れておき、ロータ９を回転させて、移送
ガイド１０へ送り込み、ＡＩの溶湯部分へＡＩチ・７プ
８を送り込むようにする。Al is supplied to the crucible in A1 in hopper 7 for supplying materials.
A rotor 9 is rotated to send the AI chip 8 to the transfer guide 10, and the AI chip 7 is sent to the molten metal part of the AI.

そしてこのような連続装置の補給したＡＩチ・ツブ８が
溶融する部所の付近を遮蔽板１１でおおいこの付近から
の蒸発物やＡＩの飛沫などが処理物１に被着しないよう
にしておく。The vicinity of the part where the AI chips 8 supplied in such a continuous device melt is covered with a shielding plate 11 to prevent evaporated matter and AI droplets from adhering to the processed material 1 from this vicinity. .

このような装置では処理物１の送り込みと電子ビーム３
でのＡＩの加熱とＡ１の蒸発分と補給する補給装置６と
が一定状態でバランスして運転させることにより連続作
業を続けることができる。In such a device, the processing material 1 is fed and the electron beam 3
Continuous work can be continued by operating in a constant balance between the heating of AI, the evaporated portion of A1, and the replenishing device 6.

そして処理物１に被着するＡｌ被映は蒸発したＡ１によ
り蒸着されるので均質な表面を得ることができる。Since the Al coating on the workpiece 1 is deposited by the evaporated Al, a homogeneous surface can be obtained.

即ち、本装置では蒸発材料を？＋ｌｉ給する際にチップ
８をルツボ２におけるＡＩの蒸発する部所とつながった
溶湯部へ挿入し電子ビーム３によりＡ１を溶かす部所は
処理物１に蒸発物や飛沫が達しない様に遮蔽板１１がカ
バーするので、溶かしたＡｌを蒸発させるべき部所へ送
り込むことができる。In other words, does this device use evaporative materials? When feeding +li, the chip 8 is inserted into the molten metal part of the crucible 2 connected to the part where AI evaporates, and the part where A1 is melted by the electron beam 3 is covered with a shielding plate to prevent evaporated matter and droplets from reaching the object 1 to be treated. 11 covers the area, so that the melted Al can be sent to the area where it is to be evaporated.

このため溶融及び蒸発が連続した状態で行なわれても処
理物１へはＡＩの溶ゆう時に起こる不純な物質の被着や
突沸による飛沫の被着が全くない均質な表面が得られる
。Therefore, even if the melting and evaporation are carried out continuously, a homogeneous surface can be obtained on the processed material 1 without any impurity substances or splashes caused by bumping occurring when the AI melts.

上記の実施例で蒸発する材料をＡＩとしたがＡ１に限ら
ず例えばＡｌの合金、Ａｕ、Ａｇ、Ｃｕその他の蒸発可
能な金属を用いる場合にも適用できるし、加熱源にあっ
ても電子ビームからのエネルギ供給の他に抵抗加熱や誘
導加熱方式の場合にも又その他の溶融蒸発方法にも適用
できる。蒸発材料の供給方法はチップとして補給する場
合の他ワイヤーで補給することもできる。Although AI is used as the material to be evaporated in the above embodiments, it is not limited to A1, but can also be applied to cases where Al alloys, Au, Ag, Cu, and other evaporable metals are used. In addition to supplying energy from a source, it can also be applied to resistance heating, induction heating, and other melting and evaporation methods. The evaporation material can be supplied in the form of chips or by wire.

又真空蒸着法に限らず蒸発源と溶湯とする方式膜を被着
できることは明らかでる。Furthermore, it is clear that the film can be deposited not only by the vacuum evaporation method but also by a method using the evaporation source and the molten metal.

又他の実施例として第２図のように、ルツボ２０の形状
をチップ８を溶融する部所２０ａとこれをつなげて蒸発
を行う部所２０ｂとし、この中間で両方の溶湯が通じる
ようにてＩｔ！１２を設け、更にチップ８を溶融する部
所からの蒸発物や飛沫などが処理物へ被着しないように
する遮蔽板１１を堰１２と接続して設ける。ルツボ２０
の月質ば用いられる溶融金属と合金を作りにくいもので
耐熱性の良好なものが用しζられる。そして補給される
跡 チップ８の一部を除いて蒸着源４は溶湯としておくよう
加熱源１３を工夫する（例えば全体を加熱する方法と局
部加熱を併用する方法が考えられる）。As another example, as shown in FIG. 2, the shape of the crucible 20 is such that a part 20a for melting the chips 8 is connected to a part 20b for evaporation, and the molten metal from both can communicate in the middle. It! 12 is provided, and a shielding plate 11 is further provided connected to the weir 12 to prevent evaporated matter and droplets from the part where the chips 8 are melted from adhering to the processed material. Crucible 20
If the material is lunar, it is difficult to form an alloy with the molten metal used, and a material with good heat resistance is used. Then, the heating source 13 is devised so that the vapor deposition source 4 is kept as molten metal except for a part of the remaining chips 8 to be replenished (for example, a method of heating the whole and a method of using local heating in combination may be considered).

又他の実施例として図示は省略するが、チップを溶融す
るルツボと蒸発を行う目的のルツボを独立に設けて、チ
ップを溶融してから蒸発を行う目的のルツボ内の溶湯と
なった部分へ注ぎ込んで加ないようなカバーを設ける。In another embodiment, although not shown, a crucible for melting chips and a crucible for evaporation are provided independently, and after the chips are melted, the molten metal is transferred to the molten metal in the crucible for evaporation. Provide a cover to prevent pouring.

前記いずれの方法でも同じ効果が得られる。The same effect can be obtained by any of the above methods.

（ｇｌ　発明の効果 以上の本発明によれば、蒸発源への蒸発材料の補給を行
っても製品への被膜の被着に悪影響を及ぼさなく、しか
も連続長時間使用できるルツボ容量より大量の蒸発源を
容易に得られ安価で且つ良好な品質の連続被着が可能と
なる。(gl) According to the present invention described above, even if the evaporation source is replenished with evaporation material, it does not adversely affect the adhesion of the film to the product, and moreover, a large amount of evaporation is achieved than the capacity of the crucible, which can be used continuously for a long time. The source can be easily obtained, and continuous deposition of good quality at low cost is possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図と第２図は本発明の第１実施例および第２実施例
による蒸着装置を部分的に示す断面図である。 １−・処理物 ２．２（１−−ルツボ ６−・補給装置 ８−・チップ １１−・遮蔽板1 and 2 are cross-sectional views partially showing a vapor deposition apparatus according to a first embodiment and a second embodiment of the present invention. 1-・Processing material 2.2 (1--Crucible 6-・Supplying device 8-・Chip 11-・Shielding plate

Claims (1)

【特許請求の範囲】[Claims] 容器内に蒸発源となる固形体を蒸発源の蒸発量に見合っ
て供給し且つそれを順次溶解させて蒸発源として、処理
物に被膜を被着させる蒸着装置において、前記固形体が
順次溶解する部所の付近からの蒸発物が前記処理物に被
着しないよう前記容器内に遮断板を儲けたことを特徴と
する蒸着装置。In a vapor deposition apparatus, a solid body serving as an evaporation source is supplied into a container in proportion to the amount of evaporation of the evaporation source, and the solid body is sequentially dissolved to serve as an evaporation source and coat a film on the object to be treated, in which the solid body is sequentially dissolved. A vapor deposition apparatus characterized in that a shielding plate is provided in the container to prevent evaporated matter from near the part from adhering to the processed material.
JP22608583A 1983-11-30 1983-11-30 Vapor deposition device Granted JPS60116769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22608583A JPS60116769A (en) 1983-11-30 1983-11-30 Vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22608583A JPS60116769A (en) 1983-11-30 1983-11-30 Vapor deposition device

Publications (2)

Publication Number Publication Date
JPS60116769A true JPS60116769A (en) 1985-06-24
JPH0369990B2 JPH0369990B2 (en) 1991-11-06

Family

ID=16839585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22608583A Granted JPS60116769A (en) 1983-11-30 1983-11-30 Vapor deposition device

Country Status (1)

Country Link
JP (1) JPS60116769A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62139868A (en) * 1985-12-13 1987-06-23 Matsushita Electric Ind Co Ltd Crucible for electron beam evaporation
JPH0222462A (en) * 1988-07-12 1990-01-25 Matsushita Electric Ind Co Ltd Crucible and production of metallic thin film using said crucible
JP2018123389A (en) * 2017-02-02 2018-08-09 株式会社アルバック Gold material for vapor deposition, and production method of gold material for vapor deposition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6075574A (en) * 1983-09-30 1985-04-27 Ulvac Corp Feeding method of metal by melting

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6075574A (en) * 1983-09-30 1985-04-27 Ulvac Corp Feeding method of metal by melting

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62139868A (en) * 1985-12-13 1987-06-23 Matsushita Electric Ind Co Ltd Crucible for electron beam evaporation
JPH0222462A (en) * 1988-07-12 1990-01-25 Matsushita Electric Ind Co Ltd Crucible and production of metallic thin film using said crucible
JP2018123389A (en) * 2017-02-02 2018-08-09 株式会社アルバック Gold material for vapor deposition, and production method of gold material for vapor deposition

Also Published As

Publication number Publication date
JPH0369990B2 (en) 1991-11-06

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