JPS6010625A - Multistage plasma processor - Google Patents
Multistage plasma processorInfo
- Publication number
- JPS6010625A JPS6010625A JP11801783A JP11801783A JPS6010625A JP S6010625 A JPS6010625 A JP S6010625A JP 11801783 A JP11801783 A JP 11801783A JP 11801783 A JP11801783 A JP 11801783A JP S6010625 A JPS6010625 A JP S6010625A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- chambers
- wafer
- cassette
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
Ｌ Ｓ Ｉ、超Ｌ Ｓ Ｉ等の大規模集積回路を形成し
たチップを製造するには、半導体ウェハーに微細パター
ンを形成したレジスト膜を介して、絶縁膜、半導体膜或
いは金属膜をエツチングする工程、上記膜をクリーニン
グする工程及びエツチングに使用したレジスト膜をウェ
ハー表面から除去する〒テテテチ工程を必要としている
。[Detailed Description of the Invention] In order to manufacture chips on which large-scale integrated circuits such as LSI, VLSI, etc. Alternatively, it requires a process of etching the metal film, a process of cleaning the film, and a process of removing the resist film used for etching from the wafer surface.
そして、上記各工程を行うには無機酸、有機溶剤等の種
々の液体化学薬品を用いた湿式処理と、プラズマを用い
た乾式処理があるが、最近では加工精度及び作業性に優
れたプラズマ処理を行う傾向にある。To carry out each of the above steps, there are wet processing using various liquid chemicals such as inorganic acids and organic solvents, and dry processing using plasma. There is a tendency to do this.
しかしながら、上記各工程をプラズマ処理によって行う
としても、各工程における処理条件、例えば真空度、処
理時間及び反応ガス等は各工程毎に異なり、また従来の
プラズマ処理装置は１つのプラズマ発生用チャンバー（
処理室）しか備えていないため、１つの処理装置で複数
の工程を連続的に行うことができない。However, even if each of the above steps is performed by plasma processing, the processing conditions in each step, such as the degree of vacuum, processing time, and reaction gas, differ for each step, and conventional plasma processing equipment has only one plasma generation chamber (
Since the processing equipment is equipped with only a processing chamber (processing chamber), it is not possible to perform multiple steps continuously with one processing device.
斯る問題は１つのプラズマ処理装置に複数のプラズマ発
生用チャンバーを設ければよいのであるが、単に複数の
プラズマ発生用チャンバーを設けただけでは装置自体極
めて大型化し、更にウニ・・−をチャンバーへ移す機構
も複雑となり、かえって処理が面倒となる。This problem can be solved by providing multiple plasma generation chambers in one plasma processing device, but simply providing multiple plasma generation chambers would make the device itself extremely large, and it would also be difficult to accommodate sea urchins in the chamber. The mechanism for transferring the data to the other end is also complicated, making the process more troublesome.
本発明は」二連した従来の問題点を改善すべく成したも
のであり、その目的とする処は、従来のプラズマ処理装
置と比べて略々同じ大きさで済み、しかもウェハーを異
なる条件で連続的に処理し得る多段プラズマ処理装置を
提供するにある。The present invention has been made to improve two problems in the prior art, and its purpose is to use approximately the same size as conventional plasma processing equipment, and to process wafers under different conditions. An object of the present invention is to provide a multi-stage plasma processing apparatus capable of performing continuous processing.
この目的を達成すべく本発明に係る多段プラズマ処理装
置は、−側部或いは両側部に真空予備室を付設した複数
のプラズマ発生用チャンバーを装置内に上下方向に重ね
て配設し、また前記真空予備室の側方にガイド部側を設
げ、このガイド部側にウニ・・−収納カセットを昇降自
在に保持せしめ、ガイド部材を設けた側の真空予備室の
側方、真空予備室内部及びプラズマ発生用チャンバー内
部のそれぞれに配設された搬送装置により、ウエノ・−
収納カセットとプラズマ発生用チャンバー内との間でウ
ェハーを出し入れするようにしたことをその要旨とする
。In order to achieve this object, the multi-stage plasma processing apparatus according to the present invention includes a plurality of plasma generation chambers each having a vacuum preliminary chamber attached to the negative side or both sides thereof, which are stacked vertically in the apparatus, A guide part side is provided on the side of the vacuum preparatory chamber, and the sea urchin storage cassette is held on this guide part side so that it can be raised and lowered, and the side of the vacuum preparatory chamber on the side where the guide member is provided, inside the vacuum preparatory chamber. Ueno--
The gist is that wafers can be taken in and out between the storage cassette and the inside of the plasma generation chamber.
以下に本発明の実施例を添付図面に基づいて説明する。Embodiments of the present invention will be described below based on the accompanying drawings.
第１図は本発明に係る多段プラズマ処理装置の要部の斜
視図であり、上下方向に複数段重なる如く配設されたプ
ラズマ発生用チャンパート・の−側部には、中間室２・
・・を介して真空予備室３・・・が個別に旧設されてい
る。また、真空予備室３の側方には一対の平行なガイド
ロッド４，４が立設され、これらガイドロッド４，４に
よりウエノ・−収納用カセット５を載置するカセット台
６の昇降動 町が案内され、それについて該カセット５
が昇降動する。この収納用カセット台６の昇降動は例え
ば３−
パルス制御されるモータによって回転するネジロッドに
カセット台６の一部を螺合せしめるようにして行う。FIG. 1 is a perspective view of the main parts of a multi-stage plasma processing apparatus according to the present invention, in which an intermediate chamber 2 and an intermediate chamber 2 and
Vacuum preliminary chamber 3... is installed separately through... A pair of parallel guide rods 4, 4 are installed on the sides of the vacuum preliminary chamber 3, and these guide rods 4, 4 move the cassette table 6, on which the ueno storage cassette 5 is placed, up and down. is guided, and the corresponding cassette 5
moves up and down. The vertical movement of the storage cassette table 6 is performed by, for example, screwing a part of the cassette table 6 onto a threaded rod rotated by a 3-pulse controlled motor.
ウェハー収納用カセット台６は中央に切欠７を形成した
平面コ字状をなし、ウエノ・−収納用カセット５を載置
したときに、ウニ・・−８を出し入れ自在としている。The wafer storage cassette stand 6 has a U-shaped planar shape with a notch 7 formed in the center, and when the wafer storage cassette 5 is placed, the urchin 8 can be taken in and taken out.
一方、前記プラズマ発生用チャンバー１、中間室２及び
真空予備室３の内部構造は第２図及び第３図に示すよう
に、プラズマ発生用チャンバー１の−１−壁９には反応
ガスの導入管１０を、側壁１１には真空ポンプにつなが
る真空引き用のバイブ１２を取り付け、またチャンバー
１内には高周波電源につながる上部電極１３と下部電極
１４とからなる平行平板型電極を設け、この下部電極１
４内に冷却水導入管１５及び排水管１６を介して冷却水
を循環せしめるようにしている。また下部電極１４の中
央からはウェハー載置台１７が昇降動自在に突出してお
り、この載置台１７はその下降限において下部電極と略
々面一となるようにされている。On the other hand, the internal structure of the plasma generation chamber 1, the intermediate chamber 2, and the vacuum preparatory chamber 3 is as shown in FIGS. A vacuum vibrator 12 connected to a vacuum pump is attached to the side wall 11 of the tube 10, and a parallel plate type electrode consisting of an upper electrode 13 and a lower electrode 14 connected to a high frequency power source is provided inside the chamber 1. Electrode 1
Cooling water is circulated through the cooling water inlet pipe 15 and the drain pipe 16 within the cooling water tank 4. Further, a wafer mounting table 17 protrudes from the center of the lower electrode 14 so as to be movable up and down, and this mounting table 17 is arranged to be substantially flush with the lower electrode at its lower limit.
４−
そしてチャンバー１内の下部で下部電極１４よりも若干
−Ｆ方には一対の平行なベルトコンベア１８゜１８が左
右方向に移動可能に配設されている。4- A pair of parallel belt conveyors 18.degree. 18 are disposed at the lower part of the chamber 1, slightly in the direction -F of the lower electrode 14, so as to be movable in the left-right direction.
また、チャンバー１と開口１９を介して連通し、真空予
備室３と開口２０を介して連通ずる中間室２内には弁装
置２１が設げられている。この弁装置２１はシリンダ２
２のロッド２３に固着された支持部２４と、この支持部
２７にリンク２５．２５を介して連結し、前面にシール
２６を取付げた弁体２７とからなり、ロッド２３がシリ
ンダ２２内に引っ込んでいるときには第４図（イ）に示
す如く、スプリングによって弁体２７先端部が支持部２
４の先端部よりも突出し、シリンダ２２を作動させて、
ロッド２３を突出せしめ第４図（ロ）に示す如く弁体２
７の先端部を中間室２の側壁に当接させ、更にロッド２
３を突出させることで弁体２７を前方へ移動せしめて、
前記開口１９を閉じ、チャンバー１と真空予備室３とを
気密に隔離する。Further, a valve device 21 is provided in the intermediate chamber 2, which communicates with the chamber 1 through an opening 19 and with the vacuum preliminary chamber 3 through an opening 20. This valve device 21 is connected to the cylinder 2
It consists of a support part 24 fixed to the rod 23 of No. 2, and a valve body 27 connected to this support part 27 via a link 25.25 and having a seal 26 attached to the front surface. As shown in FIG.
protruding from the tip of 4 and actuating the cylinder 22,
Protrude the rod 23 and remove the valve body 2 as shown in Fig. 4 (b).
The tip of the rod 7 is brought into contact with the side wall of the intermediate chamber 2, and the rod 2
By protruding 3, the valve body 27 is moved forward,
The opening 19 is closed to airtightly isolate the chamber 1 and the vacuum preliminary chamber 3.
また、真空予備室３の土壁２８には真空引き用のパイプ
２９を取付け、側壁３０には開口３１を開閉する弁体３
２を設け、更に真空予備室３内には一対の平行なベルト
コンベア３３．３３を配設している。そして、開口３１
の側方にも一対の平行なベルトコンベア３４．３４が配
設され、このベルｌコンベア３４は前後方向（第２図、
第３図において左右方向）に全体的に移動可能とされ、
前方（第２図、第３図中左方）に移動することで、前記
ガイド部材４，４に支持されたカセット台６に形成した
切欠７内に入り込むようにされ、後方に移動することで
、その後端部が開口３１の近傍に位置するようにしてい
る。そして、このベルトコンベア３４．３４も各プラズ
マ発生用チャンバー ｉ ｖｃ対応して個別に設けられ
、且つベルトコンベア３４及び前記ベルトコンベア１８
．３３のベル］・面は同一平面十にあるようにしている
。In addition, a vacuum pipe 29 is attached to the clay wall 28 of the vacuum preliminary chamber 3, and a valve body 3 for opening and closing the opening 31 is attached to the side wall 30.
2 is provided, and a pair of parallel belt conveyors 33, 33 are further provided within the vacuum preparatory chamber 3. And opening 31
A pair of parallel belt conveyors 34, 34 are also arranged on the sides of
It is movable as a whole in the left and right direction (in Fig. 3),
By moving forward (to the left in FIGS. 2 and 3), the cassette is inserted into a notch 7 formed in the cassette stand 6 supported by the guide members 4, 4, and by moving backward. , the rear end portion is located near the opening 31. The belt conveyors 34 and 34 are also individually provided corresponding to each plasma generation chamber i vc, and the belt conveyor 34 and the belt conveyor 18
．． 33 Bell] - The surfaces are on the same plane.
尚、ベルトコンベア３４ば図示例にあっては、各プラズ
マ発生用チャンバー１毎に対応して個別に配設したが、
ベルトコンベア３４を昇降動自在とすれば、１つのベル
トコンベア３４により共用を図ることも可能である。In addition, in the illustrated example, the belt conveyor 34 is individually arranged corresponding to each plasma generation chamber 1.
If the belt conveyor 34 is movable up and down, it is possible to use one belt conveyor 34 in common.
次に以上の如き構成からなるプラズマ処理装置の使用例
を述べる。尚、この場合最上段に位置する第１段目のチ
ャンバーと、第２段目のチャンバーにおいてはＣＣ＾ガ
スを導入してウェハー上のアルミニウム膜の選択的なエ
ツチングを行い、第３段目のチャンバーではＣＦ、ガス
を導入してウェハーのクリーニングを行い、第４段目の
チャンバーにおいてはアルミニウム膜上のホトレジスト
層をアッシング除去することを本発明の一例として次に
具体的に説明する。Next, an example of use of the plasma processing apparatus having the above configuration will be described. In this case, CC^ gas is introduced into the first stage chamber located at the top stage and the second stage chamber to perform selective etching of the aluminum film on the wafer. In the chamber, CF and gas are introduced to clean the wafer, and in the fourth stage chamber, the photoresist layer on the aluminum film is removed by ashing. This will be described in detail below as an example of the present invention.
先ず、ガイド部材４，４に支持されたカセット台６上に
例えば２５枚の未処理のウェハー８・・・を収納したカ
セット５を載置し、これを最上段のチャンバー１よりも
上方となるように位置せしめ、とのカセット５よりも下
方にカセット台６′上に載置した空のカセット５′を位
置せしめる。斯る状態からベルトコンベア３４を前方へ
移動させ、これと同時にカセット台６を降下させる。す
ると、力 １セット台６には切欠７が形成されているの
でカセット５の降下により最下段のウェー・−８がベル
ト７−
コンベア３４」二に載る。そこで、カセット５の降下を
停止Ｊ−，するとともにベルトコンベア３４を後方へ移
動する。First, the cassette 5 containing, for example, 25 unprocessed wafers 8 is placed on the cassette stand 6 supported by the guide members 4, 4, and placed above the chamber 1 at the top. The empty cassette 5' placed on the cassette stand 6' is positioned below the cassette 5. From this state, the belt conveyor 34 is moved forward, and at the same time, the cassette table 6 is lowered. Then, since the notch 7 is formed in the force 1 set table 6, the lowermost wafer 8 is placed on the belt 7 and the conveyor 34 as the cassette 5 is lowered. Then, the lowering of the cassette 5 is stopped J-, and the belt conveyor 34 is moved rearward.
次いで、弁体３２を回動させて開口３１を開き、ベルト
コンベア３４及び３３を駆動せしめることでウェハー８
を真空予備室３に入れる。尚、この場合、真空予備室３
と中間室２とを連通ずる開口１９は弁装置２１によって
閉じられている。Next, the valve body 32 is rotated to open the opening 31, and the belt conveyors 34 and 33 are driven to remove the wafer 8.
into the vacuum preparatory chamber 3. In this case, vacuum preliminary chamber 3
The opening 19 communicating between the intermediate chamber 2 and the intermediate chamber 2 is closed by a valve device 21.
そ１−て、弁体３２によって開口３１を閉じた後、真空
予備室３を所定の真空度になるまで真空引きし、所定の
真空度に到達したならば弁装置２１によって開口１９を
開き真空予備室３とチャンバー１内とを連通ずる。そし
て、ベルトコンベア３３及び１８を駆動することでウェ
ハー８をチャンバー１内に搬入する。この場合、チャン
バー１内は既に所定の真空度に保持されている。1- After closing the opening 31 with the valve body 32, the vacuum preparatory chamber 3 is evacuated to a predetermined degree of vacuum, and when the predetermined degree of vacuum is reached, the opening 19 is opened by the valve device 21 to release the vacuum. The preliminary chamber 3 and the inside of the chamber 1 are communicated with each other. The wafer 8 is then carried into the chamber 1 by driving the belt conveyors 33 and 18. In this case, the inside of the chamber 1 is already maintained at a predetermined degree of vacuum.
而る後、弁装置２１によって開口１９を閉じるとともに
反応ガス導入管１０を介してチャンバー１内にＣＣｔ４
ガスを導入する。また、これと同時にウェハー載Ｎ 台
１７が上昇し、ベルトコンベア１８８−
」二にあったウニ・・−８をウェハー載置台１７」二に
載せ、この後ベルトコンベア１８．１８が左右に移動し
てその間隔がウエノ・−８の径よりも大きくなる。次い
で、ウェハー載置台１７が降下してウェハー８を下部電
極１４上に載置する。この状態から、上部電極１３と下
部電極１４との間に高周波を印加しプラズマを発生せし
め、ウエノ・−８表面のアルミニウム膜をエツチングす
る。Thereafter, the opening 19 is closed by the valve device 21, and CCt4 is introduced into the chamber 1 via the reaction gas introduction pipe 10.
Introduce gas. At the same time, the wafer loading table 17 rises and places the sea urchin...-8 that was on the belt conveyor 188-''2 onto the wafer loading table 17''2, after which the belt conveyor 18.18 moves left and right. The distance between them is larger than the diameter of Ueno-8. Next, the wafer mounting table 17 descends to place the wafer 8 on the lower electrode 14. From this state, a high frequency wave is applied between the upper electrode 13 and the lower electrode 14 to generate plasma, thereby etching the aluminum film on the surface of Ueno-8.
そして、第１段目のチャンバー１における処理が半分程
度まで済んだならば、前記同様の操作により、カセット
５の下から２段目に収納さね５ていたウェハー８を第２
段目のチャンバー１内に搬入し、この第２段目のチャン
バー１内においてＣＣ７！、ｌガスを用いてウェハー８
表面のアルミニウム膜のエツチングを行う。When approximately half of the processing in the first stage chamber 1 is completed, the wafers 8 stored in the second stage from the bottom of the cassette 5 are transferred to the second stage by the same operation as described above.
It is carried into the chamber 1 of the second stage, and CC7! , the wafer 8 using l gas
Etch the aluminum film on the surface.
尚、このエツチング処理の間に、前記カセット５を一旦
上昇させ、カセット５′を最−ヒ段のチャンバー１に対
応する位置まで上昇させておく。Incidentally, during this etching process, the cassette 5 is once raised, and the cassette 5' is raised to a position corresponding to the chamber 1 in the lowest stage.
そして、第１段目のチャンバー１におけるエツチング処
理が終了したならば前記とは逆の操作によりウェハー８
を真空予備室３に戻し、ベルトコンベア３３．３４を駆
動してウェハー８をベルトコンベア３４上に載ぜ、この
ベルトコンベア３４を前方に移動せしめて、アルミニウ
ム膜のエツチング処理が終了したウェハー８を空のカセ
ット５′内に収納する。After the etching process in the first stage chamber 1 is completed, the wafer 8 is etched by the reverse operation to the above.
is returned to the vacuum preliminary chamber 3, the belt conveyors 33 and 34 are driven to place the wafer 8 on the belt conveyor 34, and the belt conveyor 34 is moved forward to place the wafer 8 on which the aluminum film has been etched. Store it in an empty cassette 5'.
次いでベルトコンベア３４をカセット５．５’の昇降動
と干渉しない位置まで戻す。この後、３段目のプラズマ
発生用チャンバー１に対応して設けられたベル）・コン
ベア３４を前方に移動せしめるとともに空のカセット５
′を降下せしめ、３段目のベルトコンベア３４Ｊ二にア
ルミニウム膜のエツチング処理が終了したウニ・・−３
４を載置する。そして、前記同様の操作でこのウェハー
を３段目のプラズマ発生用チャンバー１内に搬入する。Next, the belt conveyor 34 is returned to a position where it does not interfere with the vertical movement of the cassette 5.5'. After this, the bell) conveyor 34 provided corresponding to the third stage plasma generation chamber 1 is moved forward, and the empty cassette 5 is moved forward.
The sea urchins whose aluminum film has been etched onto the third stage belt conveyor 34J2...-3
Place 4. Then, this wafer is carried into the third stage plasma generation chamber 1 by the same operation as described above.
ここで３段目のプラズマ発生チャンバー１内には反応ガ
スとしてＣＦ４ガスを充填し、とのチャンバー１内では
プラズマクリーニング処理を行う。Here, the third stage plasma generation chamber 1 is filled with CF4 gas as a reaction gas, and a plasma cleaning process is performed in the second chamber 1.
一方、アルミ膜のエツチング処理が終了したウェハー８
に対し３段目のチャンバー１でクリーニング処理を行っ
ている間に、最上段のチャンバー１内では、カセット５
の最下段から３段目に収納されていたウェハー８のアル
ミニウム膜エツチング処理を施すこととなる。On the other hand, wafer 8 after the etching process of the aluminum film has been completed.
While the cleaning process is being performed in the third chamber 1, the cassette 5 is being cleaned in the top chamber 1.
The aluminum film of the wafer 8 stored in the third row from the bottom will be etched.
そして、３段目のチャンバー１内でクリーニング処理が
施されたウニ・・−８は前記同様の操作で再び空のカセ
ット５′内に戻され、次いで前記同様の操作により今度
は４段目のチャンバー１内に搬入される。そしてとのチ
ャンバー１内には反応カスどし、て０２ガスを導入し、
プラズマによりレジスト膜のアッシング処理を行う。こ
れと併行して第２段目のチャンバー１内で゛アルミニウ
ム膜のエツチング処理が終了したウエノ・−８を３段目
のチャンバー１内にてクリーニング処理を施す。Then, the sea urchin . It is carried into the chamber 1. Then, the reaction residue and 02 gas are introduced into the chamber 1.
Ashing processing of the resist film is performed using plasma. In parallel with this, the Ueno-8 whose aluminum film has been etched in the second stage chamber 1 is subjected to a cleaning process in the third stage chamber 1.
このようにして、複数枚のウエノ・−に対し、異なる処
理条件下において、連続的にプラズマ処理を施す。In this way, a plurality of sheets of Ueno are subjected to plasma processing continuously under different processing conditions.
尚、以上の使用例は一例に過ぎず、反応条件等 汽は任
意に設定できるものであり、また実施例にあっては個々
のプラズマ発生用チャンバー毎に真空１１−
ポンプ及び高周波電源を設けるようにしたが、１つの真
空ポンプ或いは高周波電源を共用するようにしてもよい
。Note that the above usage example is only one example, and the reaction conditions, etc. can be set arbitrarily, and in the example, a vacuum pump and high frequency power source may be provided for each plasma generation chamber. However, one vacuum pump or high frequency power source may be shared.
また、図示例にあってはプラズマ発生用チャンパート・
・の−側部に真空予備室３・・を旧設したものを示した
が、プラズマ発生用チャンパート・の両側部に真空予備
室３を旧設し、一方の真空予備室３から搬入したウェハ
ー８を他方の真空予備室３を介して搬出するようにして
もよい。尚、この場合はそれぞれの真空予備室の側方に
カイト部材４を立設する必要がある。In addition, in the illustrated example, a chamber part for plasma generation is shown.
The vacuum preparatory chamber 3 was previously installed on the - side of ・, but the vacuum preparatory chamber 3 was previously installed on both sides of the plasma generation chamber, and the vacuum preparatory chamber 3 was brought in from one of the vacuum preparatory chambers 3. The wafer 8 may be carried out via the other vacuum preliminary chamber 3. In this case, it is necessary to erect the kite member 4 on the side of each vacuum preliminary chamber.
以」二に説明したように本発明によれば、装置内に真空
予備室を旧設したプラズマ発生用チャンバーを上下方向
に重なる如（配設し、真空予備室の側方にはガイド部側
を介してウェハーを収納したカセットを昇降動自在に保
持し、更に搬送装置により、−ヒ記チャンバーとカセッ
トとの間でウェハーを出し入れ可能としたので、１つの
装置で複数のウェハーに対し、異なる条件下において連
続的に各種プラズマ処理を行うことができ、従来に比１
２−
べ飛躍的に生産効率が向」ニするとともに、装置自体が
占めるスペースも従来装置と然程変わることがない環条
（の効果を発揮する。As explained in Section 2 below, according to the present invention, the plasma generation chambers in which the vacuum preliminary chamber was previously provided are arranged in such a way that they overlap in the vertical direction, and the guide section side is placed on the side of the vacuum preliminary chamber. A cassette containing wafers is held movably up and down through the cassette, and a transport device allows wafers to be taken in and out between the chamber and the cassette, so one device can handle multiple wafers at different times. It is possible to perform various plasma treatments continuously under different conditions, and it is more efficient than conventional methods.
2- Not only does the production efficiency improve dramatically, but the space occupied by the equipment itself is not significantly different from conventional equipment.
第１図は本発明に係る多段プラズマ処理装置の要部を示
す剰視図、第２図は同要部の縦断面図、第３図は同要部
の横断面図、第４図（イ）、（ｃｉは弁装置の作動を示
す横断面図である。
尚、図面中１はプラズマ発生用チャンバー、３は真空予
備室、４はガイド部材５，５′はウェハー収納用カセッ
ト、８はウェハー、１３．１４は電極、１８．３３．３
４は搬送装置、２１は弁装置である。
特許出願人 東京電子化学才朱氏７訃材−代理人 弁理
士 下 １） 容一部
間 弁理士 大 橋 邦 音
間 弁理士 小 山 有FIG. 1 is a perspective view showing the main parts of a multi-stage plasma processing apparatus according to the present invention, FIG. 2 is a longitudinal cross-sectional view of the main parts, FIG. 3 is a cross-sectional view of the main parts, and FIG. ), (ci is a cross-sectional view showing the operation of the valve device. In the drawings, 1 is a plasma generation chamber, 3 is a vacuum preliminary chamber, 4 is a guide member 5, 5' is a wafer storage cassette, and 8 is a wafer storage cassette. Wafer, 13.14 electrode, 18.33.3
4 is a conveyance device, and 21 is a valve device. Patent applicant Tokyo Denshi Kagaku Saishu 7 deceased - agent Patent attorney 2 1) Toyo Participant Patent attorney Kuni Ohashi Otoma Patent attorney Yu Koyama
Claims (3)
部にウェハー搬送装置を組込んだ複数のプラズマ発生用
チャンバーと、これら各プラズマ発生用チャンバーの側
部に付設されるとともに内部ウェハー搬送装置を組込ん
だ真空予備室と、これら真空予備室の側方に立設された
ガイド部材と、このガイド部材に昇降動可能に支持され
るウェハー収納用カセットと、このウェハー収納用カセ
ットと前記プラズマ発生用チャンバーとの間で・ウェハ
ーを出し入れするための搬送装置とを備えてなる多段プ
ラズマ処理装置。(1) - A plurality of plasma generation chambers that are arranged to overlap in the downward direction and have a wafer transfer device built into them, and are attached to the side of each of these plasma generation chambers and are provided with an internal wafer transfer device. A vacuum preliminary chamber incorporating a device, a guide member standing upright on the side of the vacuum preliminary chamber, a wafer storage cassette supported by the guide member so as to be movable up and down, and this wafer storage cassette and the above-mentioned A multi-stage plasma processing device that is equipped with a transfer device for loading and unloading wafers to and from a plasma generation chamber.
一側部に付設されたことを特徴とする特許請求の範囲第
１項記載の多段プラズマ処理装置。(2) The multi-stage plasma processing apparatus according to claim 1, wherein the vacuum preliminary chamber is attached to one side of the plasma generation chamber.
んで両側部に付設されたことを特徴とする特許請求の範
囲第１項記載の多段プラズマ処理装置。 を形成したチップ素材となる半導体ウェハーにプラズマ
処理を施す装置に関する。(3) The multi-stage plasma processing apparatus according to claim 1, wherein the vacuum preliminary chamber is attached to both sides of the plasma generation chamber. The present invention relates to an apparatus that performs plasma processing on a semiconductor wafer that is used as a chip material on which a semiconductor wafer is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58118017A JPH0666295B2 (en) | 1983-06-29 | 1983-06-29 | Multi-stage plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58118017A JPH0666295B2 (en) | 1983-06-29 | 1983-06-29 | Multi-stage plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6010625A true JPS6010625A (en) | 1985-01-19 |
| JPH0666295B2 JPH0666295B2 (en) | 1994-08-24 |
Family
ID=14725995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58118017A Expired - Lifetime JPH0666295B2 (en) | 1983-06-29 | 1983-06-29 | Multi-stage plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0666295B2 (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0210388A (en) * | 1988-06-29 | 1990-01-16 | Canon Inc | Transfer/carrying device |
| JPH0236035U (en) * | 1988-08-31 | 1990-03-08 | ||
| JPH02152251A (en) * | 1988-12-03 | 1990-06-12 | Furendotetsuku Kenkyusho:Kk | Manufacturing system of vertical-type semiconductor |
| US5470940A (en) * | 1992-06-29 | 1995-11-28 | Canon Kabushiki Kaisha | Transfer material supporting member and image forming device using this transfer material supporting member |
| US5534581A (en) * | 1991-03-28 | 1996-07-09 | Canon Kabushiki Kaisha | Transfer material carrying member and image forming apparatus making use of the same |
| US5601913A (en) * | 1992-01-30 | 1997-02-11 | Canon Kabushiki Kaisha | Transfer material carrying member and image forming apparatus |
| US5788447A (en) * | 1995-08-05 | 1998-08-04 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| US5794110A (en) * | 1994-11-30 | 1998-08-11 | Kabushiki Kaisha Toshiba | Image forming apparatus having a semiconductive transfer belt |
| US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| US6053980A (en) * | 1996-09-26 | 2000-04-25 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| WO2003001579A1 (en) * | 2001-06-25 | 2003-01-03 | Tokyo Electron Limited | Substrate treating device and substrate treating method |
| US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
| US6551399B1 (en) | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
| US6617173B1 (en) | 2000-10-11 | 2003-09-09 | Genus, Inc. | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition |
| JP2015502654A (en) * | 2011-10-26 | 2015-01-22 | ブルックス オートメーション インコーポレイテッド | Handling and transport of semiconductor wafers |
| CN117276162A (en) * | 2023-11-22 | 2023-12-22 | 深圳市恒运昌真空技术有限公司 | Plasma processing equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5116237A (en) * | 1974-07-31 | 1976-02-09 | Daiichi Denshi Kogyo | DENKAISHORI HOSHIKI |
| JPS55150920A (en) * | 1979-05-11 | 1980-11-25 | Plasma Syst:Kk | Plasma continuous treatment apparatus |
| JPS5698478A (en) * | 1980-01-08 | 1981-08-07 | Toshiba Corp | Vacuum treating device |
| JPS56164522A (en) * | 1980-05-22 | 1981-12-17 | Sony Corp | Transferring and distributing method |
| JPS5739430U (en) * | 1980-08-14 | 1982-03-03 | ||
| JPS58111336A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Belt type wafer baking furnace |
-
1983
- 1983-06-29 JP JP58118017A patent/JPH0666295B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5116237A (en) * | 1974-07-31 | 1976-02-09 | Daiichi Denshi Kogyo | DENKAISHORI HOSHIKI |
| JPS55150920A (en) * | 1979-05-11 | 1980-11-25 | Plasma Syst:Kk | Plasma continuous treatment apparatus |
| JPS5698478A (en) * | 1980-01-08 | 1981-08-07 | Toshiba Corp | Vacuum treating device |
| JPS56164522A (en) * | 1980-05-22 | 1981-12-17 | Sony Corp | Transferring and distributing method |
| JPS5739430U (en) * | 1980-08-14 | 1982-03-03 | ||
| JPS58111336A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Belt type wafer baking furnace |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0210388A (en) * | 1988-06-29 | 1990-01-16 | Canon Inc | Transfer/carrying device |
| JPH0236035U (en) * | 1988-08-31 | 1990-03-08 | ||
| JPH02152251A (en) * | 1988-12-03 | 1990-06-12 | Furendotetsuku Kenkyusho:Kk | Manufacturing system of vertical-type semiconductor |
| JP2592511B2 (en) * | 1988-12-03 | 1997-03-19 | 株式会社フレンドテック研究所 | Vertical semiconductor manufacturing system |
| US5534581A (en) * | 1991-03-28 | 1996-07-09 | Canon Kabushiki Kaisha | Transfer material carrying member and image forming apparatus making use of the same |
| US5601913A (en) * | 1992-01-30 | 1997-02-11 | Canon Kabushiki Kaisha | Transfer material carrying member and image forming apparatus |
| US5470940A (en) * | 1992-06-29 | 1995-11-28 | Canon Kabushiki Kaisha | Transfer material supporting member and image forming device using this transfer material supporting member |
| US5794110A (en) * | 1994-11-30 | 1998-08-11 | Kabushiki Kaisha Toshiba | Image forming apparatus having a semiconductive transfer belt |
| US6066210A (en) * | 1995-08-05 | 2000-05-23 | Kokusai Electric Co., Ltd. | Substrate processing apparatus with a processing chamber, transfer chamber, intermediate holding chamber, and an atmospheric pressure section |
| US5788447A (en) * | 1995-08-05 | 1998-08-04 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| US6143083A (en) * | 1995-08-05 | 2000-11-07 | Kokusai Electric Co., Ltd. | Substrate transferring mechanism |
| US6053980A (en) * | 1996-09-26 | 2000-04-25 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
| US6551399B1 (en) | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
| US6617173B1 (en) | 2000-10-11 | 2003-09-09 | Genus, Inc. | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition |
| WO2003001579A1 (en) * | 2001-06-25 | 2003-01-03 | Tokyo Electron Limited | Substrate treating device and substrate treating method |
| JP2015502654A (en) * | 2011-10-26 | 2015-01-22 | ブルックス オートメーション インコーポレイテッド | Handling and transport of semiconductor wafers |
| US10239707B2 (en) | 2011-10-26 | 2019-03-26 | Brooks Automation, Inc | Semiconductor wafer handling and transport |
| CN117276162A (en) * | 2023-11-22 | 2023-12-22 | 深圳市恒运昌真空技术有限公司 | Plasma processing equipment |
| CN117276162B (en) * | 2023-11-22 | 2024-03-22 | 深圳市恒运昌真空技术股份有限公司 | Plasma processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0666295B2 (en) | 1994-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6010625A (en) | Multistage plasma processor | |
| US6726848B2 (en) | Apparatus and method for single substrate processing | |
| CN1192417C (en) | Method and apparatus for supercritical processing of multiple workpieces | |
| US20090029560A1 (en) | Apparatus and method for single substrate processing | |
| JP3993496B2 (en) | Substrate processing method and coating processing apparatus | |
| US11784054B2 (en) | Etching method and substrate processing system | |
| US5158616A (en) | Apparatus for cleaning a substrate | |
| US20080000495A1 (en) | Apparatus and method for single substrate processing | |
| US6681499B2 (en) | Substrate drying method for use with a surface tension effect dryer with porous vessel walls | |
| JPS6325500B2 (en) | ||
| JPS5860553A (en) | Vertical-type automatic plasma processing device | |
| US20070272657A1 (en) | Apparatus and method for single substrate processing | |
| JP3902027B2 (en) | Substrate processing equipment | |
| JPH07310192A (en) | Washing treatment device | |
| KR102058034B1 (en) | Lift pin unit and Unit for supporting substrate | |
| JP3910757B2 (en) | Processing apparatus and processing method | |
| JPH08141526A (en) | Substrate treatment apparatus and treatment tank used therein | |
| JP2004179519A (en) | Substrate processor | |
| JPH08195372A (en) | Cleaning device and its method | |
| JPH054282Y2 (en) | ||
| JPH08195368A (en) | Cleaning method and device, and transfer device | |
| JP2001044257A (en) | Vacuum treatment apparatus | |
| KR100892089B1 (en) | Wafer cleaning and processing apparatus | |
| JPH05230673A (en) | Dry etching device | |
| JPS5848935A (en) | Automatic plasma processing apparatus |