JPS60105281A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS60105281A JPS60105281A JP58212029A JP21202983A JPS60105281A JP S60105281 A JPS60105281 A JP S60105281A JP 58212029 A JP58212029 A JP 58212029A JP 21202983 A JP21202983 A JP 21202983A JP S60105281 A JPS60105281 A JP S60105281A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- type
- avalanche multiplication
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 11
- 230000031700 light absorption Effects 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000004913 activation Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910005542 GaSb Inorganic materials 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 10
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum antimony Chemical compound 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発明の技術分野
本発明は半導体受光装置、特に雑音と暗電流との両特性
が顕著に改善されるアバランシフォトダイオードに関す
る。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a semiconductor light receiving device, and particularly to an avalanche photodiode in which both noise and dark current characteristics are significantly improved.
（ｂ） 技術の背景
光を情報信号の媒体とする光通信その他のシステムにお
いて、光信号を電気信号に変換する半導体受光装置には
重要で基本的な構成要素の一つであシ、既に多数実用化
されている。これらの半導体受光装置のうち、光電流が
なだれ降伏によって増倍されて感度が高められるアバラ
ンシフォトダイオード（以下ＡＰＤと略称する）は光検
知器の信号対雑音比を改善する効果が大きい。(b) Technical Background In optical communication and other systems that use light as a medium for information signals, semiconductor photodetectors that convert optical signals into electrical signals are one of the important and basic components, and there are already many of them. It has been put into practical use. Among these semiconductor light receiving devices, an avalanche photodiode (hereinafter abbreviated as APD), whose sensitivity is increased by multiplying the photocurrent by avalanche breakdown, is highly effective in improving the signal-to-noise ratio of a photodetector.
光通信システムは情報化社会の実現に向って、大容量化
、中継の長距離化などが推進されており、光伝送に用い
られる石英系光フアイバ内の撰失が少ない波長１．３乃
至１．６５（μｆｎ）程度の帯域に対応する光通信用Ａ
ＰＤについて、更に雑音の低減が要望されている。In order to realize an information-oriented society, optical communication systems are being promoted to have higher capacity and longer relay distances. A for optical communication that corresponds to a band of about .65 (μfn)
There is a demand for further noise reduction in PDs.
（ｃ） 従来技術と問題点
波長１〔μｍ３以上の帯域を対象とするＡＰＤとしては
、既にゲルマニウム（Ｇｅ ）及び＋Ｕ−Ｖ族化合物半
導体、例えばインジウム・燐−インジウム・ガリウム・
砒素（ＩｎＰ −ＩｎＧａＡｓ ）を半導体材料とする
ＡＰＤが提供されている。(c) Prior art and problems APDs targeting wavelengths of 1 [μm3 or more] have already been developed using germanium (Ge) and +UV group compound semiconductors, such as indium, phosphorus-indium, gallium, etc.
APDs using arsenic (InP-InGaAs) as a semiconductor material have been provided.
第１図はＩｎＰ −ＩｎＧａＡｓ系ＡＰＤの代表的構造
を示す断面図である。図において、１ｔよｎ＋型ＩｎＰ
基板、２ ／／′ｉ、ｎ型ＩｎＰバッファ層、３はｎ型
ＩｎＧａＡｓ光吸収層、４はｎ型１ｎＰウィンド層、５
はＩｎＰつインド層４に形成されたダ型領域、６はガー
ドリングを構成するｐ型領域、７は保護絶縁膜、８は反
射防止膜、９はｐ側電極、１０はｎ側電極を示す。FIG. 1 is a sectional view showing a typical structure of an InP-InGaAs APD. In the figure, 1t and n+ type InP
Substrate, 2 //'i, n-type InP buffer layer, 3, n-type InGaAs light absorption layer, 4, n-type 1nP window layer, 5
denotes a type region formed in the InP layer 4, 6 denotes a p-type region constituting a guard ring, 7 denotes a protective insulating film, 8 denotes an antireflection film, 9 denotes a p-side electrode, and 10 denotes an n-side electrode. .
このＡ Ｐ Ｄ Ｉｃ ｎ ｌｌｌ電極１０を正、ｐ側
電極９を負の極性とする逆バイアス電圧を印加すること
により、Ｐｎ接合すなわちｐ＋型領領域５ｎ型工」ウィ
ンド層４との界面を挾んで空乏層が形成され、これがｎ
型ＩｎＧａＡｓ光吸収層３までひろがシ、この元吸収層
３内で入力信号光によって電子が伝導帯に励起されるこ
とによって電子正孔対が発生し、正孔はｐ側電極９に向
ってドリフトする。この正孔が電界によって加速されエ
ネルギーを得て、ｎ型ＩｎＰウィンド層４において結晶
格子を構成する原子に衝突した際に電子正孔対を生ずる
に到る。By applying a reverse bias voltage with positive polarity on the A P D Ic n llll electrode 10 and negative polarity on the p-side electrode 9, a Pn junction, that is, the interface between the p+ type region 5n type window layer 4 is sandwiched. A depletion layer is formed, and this
The type InGaAs light absorption layer 3 is expanded, and within this original absorption layer 3, electrons are excited to the conduction band by the input signal light, thereby generating electron-hole pairs, and the holes are directed toward the p-side electrode 9. Drift. These holes are accelerated by the electric field, gain energy, and when they collide with atoms forming the crystal lattice in the n-type InP wind layer 4, electron-hole pairs are generated.
この正孔及び電子による衝突電離が繰返されてなだれ増
倍された正孔がｐｎ接合を横切ることによって電気的応
答が得られる。このためにｎｍ、１ｒｌＰウィンド層４
は増倍層もしくは増倍領域とも呼ばれる。This impact ionization by holes and electrons is repeated, and the avalanche-multiplied holes cross the p-n junction, thereby producing an electrical response. For this purpose, nm, 1rlP wind layer 4
is also called a multiplication layer or a multiplication region.
前記の衝突回数の統計的なゆらぎによって通常増倍雑音
と呼ばれる固有のショット雑音が現われる。電子が単位
長当たり衝突電離を起す回数すなわち電子のイオン化率
をα、正孔のイオン化率をβとするとき、イオン化率比
β／αもしくはα／βが１に近いときに前記増倍雑音が
大きくなり、イオン化率比が大きいときに増倍雑音は減
少することが既によく知られている。Due to the above-mentioned statistical fluctuations in the number of collisions, an inherent shot noise, usually called multiplication noise, appears. When the number of times an electron undergoes collision ionization per unit length, that is, the ionization rate of electrons is α, and the ionization rate of holes is β, then when the ionization rate ratio β/α or α/β is close to 1, the multiplication noise is It is already well known that the multiplication noise decreases when the ionization rate ratio increases.
半導体受光装置については更に暗電流（ｐｎ接合部のト
ンネル電流）特性が重要である。先に述べた如き従来構
造のＡＰＤにおいては、なだれ降伏を発生するために１
０５（Ｖ／Ｇり程度以上の強電界を必要とし、また電界
の分布はｐｎ接合界面において最大となるためにｐｎ接
合がなだれ増倍領域を形成する半導体層に設けられてい
る。この結果増倍雑音と暗電流とのＡＰＤの重要な２％
性がこの半導体層によって支配される。しかるに例えば
前記従来例のＩｎＰ等の半導体材料では、イオン化率比
が大きいこととトンネル電流が少ないこと七が両立せず
、低増幅雑音でかつ低暗電流である新１．１ｎＡＰＤが
要望されている。For semiconductor light receiving devices, dark current (tunnel current at the pn junction) characteristics are also important. In the APD of the conventional structure as described above, 1
05 (A strong electric field of about V/G or higher is required, and the electric field distribution is maximum at the pn junction interface, so the pn junction is provided in the semiconductor layer forming the avalanche multiplication region. As a result, the avalanche multiplication region is Significant 2% of APD with double noise and dark current
properties are controlled by this semiconductor layer. However, for example, with semiconductor materials such as InP of the conventional example, a high ionization rate ratio and a low tunnel current are not compatible, and a new 1.1 n APD with low amplification noise and low dark current is desired. .
最近半導体祠料のイオン化率比が特に大きくなる共鳴イ
オン化現象の具体的な例が報告されている。すなわち例
えばガリウムアルミニウムアンチモン（Ｇａｌ−ｘＡＩ
ＸＳｂ）について、アルミニウム（Ａｌ）の組成比ｘ
＝ ０．０６５において価電子帯のスピン軌道分離準位
△が伝導帯と価電子帯とのバンドギャップエネルギーＥ
ｇに等しくなって、正孔のイオン化率比βが著しく増大
しイオン化率比β／α〉２０が例えば電界強度４ ｘ’
ｉｏ’［Ｖ／ｃＩｒＬ〕程度において得られている。（
ＩＥＥＥ Ｊ、Ｑｈ？−１７゜ｐｐ、２８４− ．１９
８υ
同様の共鳴イオン化現象によるイオン化率比β／αの著
しい増大が、インジウム砒素（ＩｎＡｓ） １カドミウ
ム水銀テルル（Ｃｄ０７３Ｈｇ０２７Ｔｅ）などについ
ても知られている。これらの半導体材料をなだれ増倍領
域に用いるならば増倍雑音の低減が６Ｊ能であるが、一
方において仁れらの半導体材料はバンドギャップが狭く
、先に説明した構造の如＜ｐｎ接合をこの半導体層内に
設けた場合には暗電流が増大して良好な受光装置は得ら
れない。従って共鳴イオン化現象を活用して増倍雑音を
低減し、併せて暗電流が抑制される半導体受光装置的の
構造が要求されている。Recently, a specific example of a resonance ionization phenomenon in which the ionization rate ratio of a semiconductor abrasive material becomes particularly large has been reported. That is, for example, gallium aluminum antimony (Gal-xAI
For XSb), the composition ratio x of aluminum (Al)
= 0.065, the spin-orbit separation level △ of the valence band is the band gap energy E between the conduction band and the valence band
g, the hole ionization rate ratio β increases significantly, and the ionization rate ratio β/α〉20 becomes equal to, for example, the electric field strength 4 x'
io'[V/cIrL]. (
IEEE J, Qh? -17°pp, 284-. 19
8υ A remarkable increase in the ionization rate ratio β/α due to a similar resonance ionization phenomenon is also known for indium arsenide (InAs) 1 cadmium mercury tellurium (Cd073Hg027Te) and the like. If these semiconductor materials are used in the avalanche multiplication region, the multiplication noise can be reduced by 6J, but on the other hand, the semiconductor materials of Nire et al. have a narrow band gap, making it difficult to form a pn junction like the structure described above. If it is provided within this semiconductor layer, dark current will increase and a good light receiving device cannot be obtained. Therefore, there is a need for a semiconductor photodetector-like structure that utilizes the resonance ionization phenomenon to reduce multiplication noise and suppress dark current.
（ｄ） 発明の目的
本発明は前記状況に対処して、ＦＭ電流と雑音とが共に
低減される半導体受光装置、特にアバランシフォトダイ
オードの構造を提供することを目的とする。(d) Object of the Invention The present invention addresses the above-mentioned situation and aims to provide a structure of a semiconductor light receiving device, particularly an avalanche photodiode, in which both FM current and noise are reduced.
（ｅ） 発明の構成
本発明の前記目的は、Ｐｎ接合となだれ増倍領域との間
に光吸収領域を備えて々る半導体受光装置により達成さ
れる。(e) Structure of the Invention The above object of the present invention is achieved by a semiconductor light receiving device including a light absorption region between a Pn junction and an avalanche multiplication region.
前記半導体受光装置は、前記なだれ増倍領域を、共鳴イ
オン化現象によりキャリア増倍が行なわれる半導体劇料
によって構成することにょシ芥易に実現する仁とができ
る。The semiconductor light-receiving device can be easily realized by constructing the avalanche multiplication region using a semiconductor material in which carrier multiplication is performed by a resonance ionization phenomenon.
すなわち本発明においては、従来性なわれているＡＰＤ
のなだれ増倍領域を構成する半導体材料よシもなだれ降
伏電圧の低い半導体材料によって増倍領域を構成し、ｐ
ｎ接合を設けるウィンド層はトンネル電流の少ない、す
なわちバンドギャップの大きい半導体材料によって構成
する。この両生導体領域間に意図する受光波長帯域に適
合するバンドギャップを有する光吸収領域を設ける。That is, in the present invention, the conventional APD
The multiplication region is made of a semiconductor material having a lower avalanche breakdown voltage than the semiconductor material forming the avalanche multiplication region, and p
The window layer providing the n-junction is made of a semiconductor material with a small tunnel current, that is, a large band gap. A light absorption region having a bandgap matching the intended receiving wavelength band is provided between the bidirectional conductor regions.
この様なヘテロ接合半導体基体は、例えばなだれ降伏が
共鳴イオン化現象によって従来一般に使用されている半
導体材料より遥に低い電圧において発生する半導体によ
ってなだれ増倍領域を構成することにより実現されて、
雑音の低減が達成され、同時にｐｎ接合近傍における電
界強度の低減によって暗電流も低減される。Such a heterojunction semiconductor body is realized, for example, by constructing an avalanche multiplication region with a semiconductor whose avalanche breakdown occurs due to the resonance ionization phenomenon at a much lower voltage than the semiconductor materials commonly used in the past.
A reduction in noise is achieved, and at the same time dark current is also reduced due to the reduction in electric field strength in the vicinity of the pn junction.
（ｆ） 発明の実施例
以下本発明を実施例によ勺図面を参照して具体的に説明
する。(f) Embodiments of the Invention The present invention will now be described in detail by way of embodiments with reference to the drawings.
第２図（ａ）ｒＩ′ｉ本発明の実施例を示す断面図、同
図（ｂｌ ＆−ｔ、本実施例の半導体基体内の電界強度
の分布の例を示す図である。FIG. 2(a) rI'i is a cross-sectional view showing an embodiment of the present invention; FIG.
第２図（ａ）に示す如く本実施例の半導体基体は、不純
物濃度が１ｘ１ｏ１８（ＧｒｒＬ”）程度のｐ＋＋ガリ
ウムアンチモン（Ｇａ Ｓｂ ）基板１１上に、なだれ
増倍領域として例えば不純物濃度がｌＸｌ０Ｉ５（礪二
３〕程度のｐ型Ｇａ ＯＱ３５ Ａｌｏｏｓｓ Ｓｂ
Ｍ １２が厚さ例えば０．５乃至１（７１ｍ）程度に、
次に光吸収領域として例えば不純物濃度がＩ Ｘ Ｉ
Ｑ ｌｆｌ （（ｓ−３）程度のｐ型ＧａｏｅＡｌｏｔ
Ｓｂ層１３が厚さ例えば２〔／１ｔ１１〕程度ニ、次に
ウィンド層として例えば不純物濃度が１×１０１６（ｃ
Ｉｎ−８）程度のｐ型ＧａｏｓＡＪｏ４Ｓｂ層１４が厚
さ例えば２〔μｍ〕程度に順次成長されている。このｐ
型ＧａｏｓＡＪｌ！ｏ４Ｓｂウィンド層１４に例えばシ
リコン（Ｓｉ）をイオン注入し活性化熱処理を施して不
純物濃度Ｉ Ｘ １ｏ１８（ｃｉ−３）程度のｎ＋型領
領域１５設けられている。また１７は保護絶縁膜、１８
は反射防止膜、１９はｐ側電極、２０はｎ側電極を示す
。As shown in FIG. 2(a), the semiconductor substrate of this embodiment is formed by forming an avalanche multiplication region on a p++ gallium antimony (Ga Sb ) substrate 11 with an impurity concentration of about 1×1018 (GrrL”), for example, with an impurity concentration of 1×10I5 (GrrL”). p-type Ga OQ35 Alooss Sb
M12 has a thickness of, for example, about 0.5 to 1 (71 m),
Next, as a light absorption region, for example, the impurity concentration is I
Q lfl (p-type GaoeAlot of (s-3)
The Sb layer 13 has a thickness of, for example, about 2[/1t11], and then the window layer has an impurity concentration of, for example, 1×1016(c).
A p-type GaosAJo4Sb layer 14 of approximately In-8) is sequentially grown to a thickness of, for example, approximately 2 [μm]. This p
TypeGaosAJl! For example, silicon (Si) is ion-implanted into the o4Sb window layer 14, and an activation heat treatment is performed to provide an n+ type region 15 having an impurity concentration of about I x 1o18 (ci-3). Further, 17 is a protective insulating film, 18
1 is an antireflection film, 19 is a p-side electrode, and 20 is an n-side electrode.
本実施例の電界強度は第２図（ｂ）に示す例の如く分布
せしめる。すなわち最大の電界強［はｐ型Ｇａｏ、ａＡ
ｊ？ｏ４Ｓｂウィンド１−１４のｐｎ接合界面に生じて
例えば３ Ｘ １０’［Ｖ／儂］程度であシ、なだれ増
倍領域であるｐ型Ｇａｏ、ｏｓｓＡＪ！ｉｏ、ｏａｓ
Ｓｂｂｌ２は例えば５ Ｘ １０４ （Ｖ／Ｇｍ）程度
と最も低い。なだれ増倍領域の電界強度はこの様に前記
従来例の１７１０程度にて足り、ｐｎ接合界面の電界強
度も従来より低くすることが可能である。The electric field strength in this embodiment is distributed as shown in the example shown in FIG. 2(b). That is, the maximum electric field strength [is p-type Gao, aA
j? Formed at the p-n junction interface of the o4Sb window 1-14, the p-type Gao, ossAJ!, which is an avalanche multiplication region, is formed, for example, on the order of 3 x 10' [V/儂]. io, oas
Sbbl2 is the lowest, for example, about 5×104 (V/Gm). In this way, the electric field strength in the avalanche multiplication region is sufficient to be about 1710 as in the conventional example, and the electric field strength at the pn junction interface can also be made lower than in the conventional example.
以上説明した本発明の実施例を先に説明したＩｎＰ−Ｉ
ｎＧａＡｓ系ＡＰＤの従来例と比較すれば、動作電圧は
従来例が１ｏｏｖ程度であるのに対して本実施例では２
０Ｖ程度と大幅に低くすることができる。The embodiment of the present invention described above is applied to the InP-I described above.
Compared to the conventional example of nGaAs-based APD, the operating voltage of the conventional example is about 1oov, whereas in this example it is about 2oov.
It can be significantly lowered to around 0V.
また実効的な増倍雑音パラメータには従来例では２程度
であるのに対して本実施例ではｌＯ程度であって約５ｄ
Ｂの改善が達成されている。更に暗電流はなだれ降伏電
圧の９ｏ（％）の逆バイアス′電圧を印加して、従来例
では５０ｎＡ程度であるのに対して本実施例では５ｎＡ
程度に減少している。In addition, the effective multiplication noise parameter is about 2 in the conventional example, but in this embodiment it is about lO and about 5 d.
Improvement of B has been achieved. Furthermore, by applying a reverse bias voltage of 90 (%) of the avalanche breakdown voltage, the dark current is approximately 50 nA in the conventional example, but is 5 nA in this example.
It has decreased to a certain extent.
以上説明した如く本発明の構造によって、雑音と暗電流
との両特性について従来のＡＰＤに比較して大きく改善
されるが、更に本発明の構造によれば光吸収領域がなだ
れ増倍領域より前面に配設されるために、なだれ増倍領
域のバンドギャップが光吸収領域より小さい組合わせを
行なっても光吸収に影響はなく、最適の吸収帯域特性を
選択することかできる。As explained above, the structure of the present invention greatly improves both noise and dark current characteristics compared to conventional APDs. Therefore, even if a combination is made in which the bandgap of the avalanche multiplication region is smaller than that of the light absorption region, light absorption is not affected, and the optimum absorption band characteristics can be selected.
（ｇ） 発明の効果
以上説明した如く本発明によれば、半導体受光装置、特
にアバランシフォトダイオードの雑音と暗電流とを同時
に低減することが可能となり、例えば光通信システムの
大容量化、中継間隔の延技などの光情報システムの進展
に寄与することができる。(g) Effects of the Invention As explained above, according to the present invention, it is possible to simultaneously reduce the noise and dark current of a semiconductor photodetector, especially an avalanche photodiode, and this is useful, for example, in increasing the capacity of optical communication systems and relaying. It can contribute to the progress of optical information systems such as spacing extension technology.
第１図は従来のＡＰＤの例を示す断面図、第２図（ａ）
は本発明の実施例を示す断面図、同図（ｂ）は該実施例
における電界強度分布の例を示す図である。
図において、１１はｐ＋型Ｇａｒｂ基板、１２はｐ型Ｇ
ａ ｏ、ｅｓｓ Ａｌｏ、ｏｓｓ Ｓｂ層）１３はｐ型
Ｇａｏ９７１ｏｌＳｂ層、１４はｐ型Ｇａ ｏ、ａ Ａ
Ａ！ ０．４ Ｓｂ層、１５はｎ１領域、１９はｐ側電
極、２０はｎ側電極を示す。Figure 1 is a sectional view showing an example of a conventional APD, Figure 2 (a)
1 is a cross-sectional view showing an embodiment of the present invention, and FIG. 2B is a diagram showing an example of electric field strength distribution in this embodiment. In the figure, 11 is a p+ type Garb substrate, 12 is a p type G
ao, ess Alo, oss Sb layer) 13 is p-type Gao971olSb layer, 14 is p-type Gao, a A
A! 0.4 Sb layer, 15 is the n1 region, 19 is the p-side electrode, and 20 is the n-side electrode.
Claims (2)
を備えてなることを特徴とする半導体受光装置。(1) A semiconductor light receiving device comprising a light absorption region between a pn junction and an avalanche multiplication region.
シキャリア増倍が行なわれる半導体材料によって構成さ
れてなることを特徴とする特許請求の範囲第１項記載の
半導体受光装置。(2) The semiconductor light receiving device according to claim 1, wherein the avalanche multiplication region is made of a semiconductor material in which carrier multiplication is performed by a resonance ionization phenomenon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58212029A JPS60105281A (en) | 1983-11-11 | 1983-11-11 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58212029A JPS60105281A (en) | 1983-11-11 | 1983-11-11 | Semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60105281A true JPS60105281A (en) | 1985-06-10 |
Family
ID=16615687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58212029A Pending JPS60105281A (en) | 1983-11-11 | 1983-11-11 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60105281A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0242298A2 (en) * | 1986-04-15 | 1987-10-21 | Fujitsu Limited | Avalanche photo-diode |
| US4984032A (en) * | 1988-01-18 | 1991-01-08 | Fujitsu Limited | Semiconductor photodiode |
| JP2009292473A (en) * | 1998-03-27 | 2009-12-17 | Manitowoc Crane Companies Ltd | Four-truck type crawler crane |
-
1983
- 1983-11-11 JP JP58212029A patent/JPS60105281A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0242298A2 (en) * | 1986-04-15 | 1987-10-21 | Fujitsu Limited | Avalanche photo-diode |
| JPS62259481A (en) * | 1986-04-15 | 1987-11-11 | Fujitsu Ltd | Semiconductor light receiving device |
| US4935795A (en) * | 1986-04-15 | 1990-06-19 | Fujitsu Limited | Avalanche photodiode with uniform avalanche multiplication |
| US4984032A (en) * | 1988-01-18 | 1991-01-08 | Fujitsu Limited | Semiconductor photodiode |
| JP2009292473A (en) * | 1998-03-27 | 2009-12-17 | Manitowoc Crane Companies Ltd | Four-truck type crawler crane |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6515315B1 (en) | Avalanche photodiode for high-speed applications | |
| Decoster et al. | Optoelectronic sensors | |
| US4142200A (en) | Semiconductor photodiodes | |
| JPS6328506B2 (en) | ||
| Lee | Photodetectors | |
| JP4702977B2 (en) | Receiver | |
| US5446293A (en) | Resonant tunneling opto-electronic device having a plurality of window layers | |
| US4701773A (en) | Semiconductor device for receiving light | |
| JPS62259481A (en) | Semiconductor light receiving device | |
| JP2002231992A (en) | Semiconductor light receiving element | |
| JPS63955B2 (en) | ||
| JPS60105281A (en) | Semiconductor photodetector | |
| Wang et al. | High gain and wide dynamic range punchthrough heterojunction phototransistors | |
| JPS61170079A (en) | Semiconductor light-receiving element | |
| WO2021100088A1 (en) | Avalanche photodiode | |
| JPH051629B2 (en) | ||
| Law et al. | State‐of‐the‐art performance of GaAlAs/GaAs avalanche photodiodes | |
| JPS59151475A (en) | Hetero-structure avalanche-photodiode with buffer layer | |
| JPH05291609A (en) | Optical semiconductor device | |
| KR100198423B1 (en) | Long wavelength optic detector of avalanche photo diode type | |
| JPS63198383A (en) | Semiconductor photodetector and its manufacture | |
| Arshad et al. | Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode | |
| JPH0265279A (en) | Semiconductor photodetecting element | |
| JPS63142683A (en) | Avalanche photodiode | |
| JPS6373676A (en) | Semiconductor photodetector |