JPS60105234A - Microwave plasma processing apparatus - Google Patents
Microwave plasma processing apparatusInfo
- Publication number
- JPS60105234A JPS60105234A JP21234783A JP21234783A JPS60105234A JP S60105234 A JPS60105234 A JP S60105234A JP 21234783 A JP21234783 A JP 21234783A JP 21234783 A JP21234783 A JP 21234783A JP S60105234 A JPS60105234 A JP S60105234A
- Authority
- JP
- Japan
- Prior art keywords
- coil
- waveguide
- discharge tube
- size
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、マイクロ波プラズマ処理装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a microwave plasma processing apparatus.
従来のマイクロ波プラズマ処理装置を第１図により、説
明する。A conventional microwave plasma processing apparatus will be explained with reference to FIG.
第１図で、真空排気装置１０が連結され放電ガス導入用
のノズルかが設けられた、この場合、上方が開放した真
空容器２１には、石英、アルミナ等の電気絶縁材料で形
成され一端、この場合は、下端が開放した放電管器が真
空容器２１と連通して気密に構設されている。放電管間
の外側には、導電性材料で形成された導波管仙が放電管
Ｉを含み同心状に配設されている。導波管初の長芋方向
、この場合は、高さ方向には、独立して操作されるコイ
ル５０ａ〜５０ ｃが、最上段のコイル５０ａとその下
段のコイルｉｂとの間が放電管器の他端部、この場合は
頂部と対応するような位置で配設、この場合は、環装さ
れている。導波管菊とマイクロ波発生装置６０とは、導
波管、同軸ケーブル等のマイクロ波伝達手段７０で連結
されている。ノズル加には、ガス導管器の一端が連結さ
れ、ガス導管器の他端は放電ガス供給装置匍に連結され
ている。また、放電管（資）内の放電領域に対応して基
板台１００が設けられている。In FIG. 1, a vacuum chamber 21 is connected to a vacuum evacuation device 10 and is provided with a nozzle for introducing discharge gas. In this case, a vacuum chamber 21 with an open top is formed of an electrically insulating material such as quartz or alumina. In this case, a discharge tube whose lower end is open is connected to the vacuum container 21 and is airtightly constructed. On the outside between the discharge tubes, a waveguide tube made of a conductive material includes the discharge tube I and is arranged concentrically. In the first direction of the waveguide, in this case, in the height direction, the coils 50a to 50c, which are operated independently, are connected to each other between the uppermost coil 50a and the lower coil ib of the discharge tube device. It is disposed at a position corresponding to the other end, in this case the top, and in this case is ringed. The waveguide chrysanthemum and the microwave generator 60 are connected by a microwave transmission means 70 such as a waveguide or a coaxial cable. One end of a gas conduit is connected to the nozzle, and the other end of the gas conduit is connected to a discharge gas supply device. Further, a substrate stand 100 is provided corresponding to the discharge area within the discharge tube.
γを
基板１１０が外部より真空容器２１．放電ｐｆ″（資）
に搬入され、被処理面を上面として基板台１００に載置
保持される。その後、真空排気装置１０を駆動すること
で真空容器２１．放電管（９）は所定圧力まで減圧排気
される。その後、放電ガス供給装置頒から放電ガスがガ
ス導管器、ノズル加を介して真空容器２１、放電管器に
導入されると共に、真空容器２１゜放電管間の圧力は、
真空排気装置１０により処理圧力に適正に維持される。The substrate 110 is exposed to the vacuum container 21 from the outside. Discharge pf'' (capital)
and is placed and held on the substrate stand 100 with the surface to be processed facing upward. Thereafter, by driving the vacuum evacuation device 10, the vacuum container 21. The discharge tube (9) is evacuated to a predetermined pressure. Thereafter, discharge gas is introduced from the discharge gas supply device into the vacuum vessel 21 and the discharge tube via the gas conduit and nozzle, and the pressure between the vacuum vessel 21 and the discharge tube is as follows.
The processing pressure is properly maintained by the vacuum evacuation device 10.
一方、マイクロ波発生装置６０で発生したマイクロ波は
マイクロ波伝達手段７０を介して導波管切に導入された
後に放電管間に吸収される。また、コイル５０ ａ −
５０ｃに所定電流を独立して通電することで磁場が発゛
生ずる。これらマイクロ波による電界と磁場とが印加さ
れることで放電管刃の放電領域には、プラズマ放電が生
じ、この放電により導入された放電ガスはプラズマ化さ
れ、プラズマイオンが発生する０このプラズマイオンを
用いて基板１１０の処理がなされる。On the other hand, the microwave generated by the microwave generator 60 is introduced into the waveguide cutter via the microwave transmission means 70 and then absorbed between the discharge tubes. In addition, the coil 50a-
A magnetic field is generated by independently supplying a predetermined current to 50c. Plasma discharge is generated in the discharge region of the discharge tube blade by applying the electric field and magnetic field caused by these microwaves, and the discharge gas introduced by this discharge is turned into plasma, and plasma ions are generated. The substrate 110 is processed using.
なお、コイル５０ ａ −５０ｃで発生する磁場分布と
しては、放電管間の頂部直上にて磁束密度が最大となり
放電管間の長手方向になだらかに減少するような分布に
なることが必要であり、このため、コイル５０ａに通電
される電流値を最大として最大磁場を発生させ、コイル
５０ｂ、５０ｃになるにつれて通電される電流値は低下
させられる。また、コイル５０ ａ −５０ｃは、通常
、銅線又は銅条を巻いた構造であり、コイル５０ａ、５
０ｃの外寸法は、装置外観上からコイル５０ａの外寸法
と略同−となっている。The magnetic field distribution generated in the coils 50a to 50c must be such that the magnetic flux density is maximum right above the top between the discharge tubes and gradually decreases in the longitudinal direction between the discharge tubes. For this reason, the maximum magnetic field is generated by setting the current value applied to the coil 50a as the maximum, and the current value applied to the coils 50b and 50c decreases. Further, the coils 50a to 50c usually have a structure in which copper wire or copper strip is wound.
The outer dimensions of 0c are approximately the same as the outer dimensions of the coil 50a from the appearance of the device.
このようなマイクロ波プラズマ処理装置では、導波管の
寸法が一定であり、したがって、最大磁場発生用のコイ
ルの外寸法が大きくなるため、装置が大型化し専有床面
積が増大するといった欠点があった〇
〔発明の目的〕
本発明の目的は、最大磁場発生用のコイル外寸法を小さ
くすることで、装置を小型化でき専有床面積の狭小化が
できるマイクロ波プラズマ処理装置を提供することにあ
る。In such microwave plasma processing equipment, the dimensions of the waveguide are constant, and therefore the outer dimensions of the coil for generating the maximum magnetic field are large, which has the disadvantage of increasing the size of the equipment and increasing the dedicated floor space. 〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 is be.
本発明は、導波管の放電管を含まない部分に対応して最
大磁場発生用のコイルを配設すると共に、導波管の放電
管を含まない部分の寸法を放電管を含む部分の寸法より
も小さくしたことを特徴とするもので、最大磁場発生用
のコイルの内寸法を他のコイルの内寸法よりも小さ曵し
てその外寸法を小さくしようとしたものである。The present invention provides a coil for generating the maximum magnetic field corresponding to the portion of the waveguide that does not include the discharge tube, and also changes the dimensions of the portion of the waveguide that does not include the discharge tube to the dimensions of the portion that includes the discharge tube. This is characterized by making the inner dimensions of the coil for generating the maximum magnetic field smaller than the inner dimensions of the other coils, thereby reducing its outer dimensions.
本発明の一実施例を第２図により説明する。なお、第２
図で第１図と同−装置等は同一符号で示し説明を省略す
る。An embodiment of the present invention will be described with reference to FIG. In addition, the second
In the figure, the same devices as those in FIG.
第２図で、コイル５０ａ′〜５０ｃ′ の中で最大磁場
発生用のコイル５０ａ’は、導波管荀′の放電管（資）
を含まない部分に対応して配役、この場合は、環装され
ている。導波管旬′の放電管（資）を含まない部分、つ
まり、マイクロ波発生装置ωで発生しマイクロ波伝達手
段７０を介して伝達されたマイクロ波が通過するだけの
部分の寸法は、放電管（資）を含む部分の寸法よりも小
さ４なっている。コイル５０ ａ ’の内寸法は、導波
管伯′の寸法が小さくなった分だけ、コイル５０ｂ’、
５０ｃ’の内寸法よりも小さ曵なり、したがって、コ
イル５０ａ′の外寸法も小さ々なっている。また、必要
とされる磁場分布を考慮した場合、コイル５０ｂ’ 、
５０ｃ’ の外寸法はコイル５０ａ’の外寸法よりも
小さ−することができるが、この場合も従来技術と同様
に装置外観上からコイル５０ａ’の外寸法と同一とされ
ている。なお、本実施例のようなプラズマ処理装置によ
る基板１１０の処理操作は、上記した従来技術と同様で
あるため、説明を省略する。In FIG. 2, among the coils 50a' to 50c', the coil 50a' for generating the maximum magnetic field is connected to the discharge tube (source) of the waveguide tube'.
The cast corresponds to the part that does not contain, in this case, the ring. The dimensions of the part of the waveguide 1' that does not include the discharge tube (part), that is, the part through which the microwave generated by the microwave generator ω and transmitted via the microwave transmission means 70 passes, are as follows: It is smaller than the size of the part containing the pipe (materials). The inner dimensions of the coil 50a' are smaller than those of the waveguide 50b',
The outer dimensions of the coil 50a' are also smaller than the inner dimensions of the coil 50c'. Furthermore, when considering the required magnetic field distribution, the coils 50b',
The outer dimensions of the coil 50c' can be smaller than those of the coil 50a', but in this case as well, they are made to be the same as the outer dimensions of the coil 50a' from the viewpoint of the appearance of the device, as in the prior art. Note that the processing operation of the substrate 110 by the plasma processing apparatus of this embodiment is the same as that of the above-mentioned conventional technique, and therefore the description thereof will be omitted.
本実施例のようなマイクロ波プラズマ処理装置では、最
大磁場発生用のコイルの外寸法を小さくできる（従来４
５０ ｍｖｉであったものを４００ｍｍ１こ小さくでき
る）ため、装置を小型化でき専有床面積を狭小化できる
。In a microwave plasma processing apparatus such as this embodiment, the outer dimensions of the coil for generating the maximum magnetic field can be reduced (compared to the conventional 4
(50 mvi can be reduced by 400 mm), making it possible to downsize the device and reduce the dedicated floor space.
本発明は、以上説明したように、導波管の放電管を含ま
ない部分に対応して最大磁場発生用のコイルを配設する
と共に、導波管の放電管を含まない部分の寸法を放電管
を含む部分の寸法よりも小サクシたことで、最大磁場発
生用のコイルの外寸法を小さくできるので、装置を小型
化でき専有床面積を狭小化できるという効果がある。As explained above, the present invention arranges a coil for generating the maximum magnetic field corresponding to the portion of the waveguide that does not include the discharge tube, and also reduces the dimensions of the portion of the waveguide that does not include the discharge tube. Since the diameter is smaller than the size of the portion including the tube, the outer dimensions of the coil for generating the maximum magnetic field can be reduced, which has the effect of making the device more compact and reducing the dedicated floor space.
第１図は、従来のマイクロ処理装置の構成図、第２図は
、本発明によるマイクロ波プラズマ処理装置の一実施例
を示す構成図である。
ｌＯ・・・・・・真空排気装置、菊・・・・・・放電管
、虹・・・・・・導波管、５０ａ’ないし５０ｃ’・・
・・・・コイル、ω・・・・・・マイクロ波発生装置、
７０・・・・・・マイクロ波伝達手段、匍・・・才１図
０６０
才２図FIG. 1 is a block diagram of a conventional microprocessing apparatus, and FIG. 2 is a block diagram showing an embodiment of a microwave plasma processing apparatus according to the present invention. lO...Evacuation device, Chrysanthemum...Discharge tube, Rainbow...Waveguide, 50a' to 50c'...
... Coil, ω ... Microwave generator,
70...Microwave transmission means, 匍...1 figure 060 2 figure
Claims (1)
みその外側に同心状に配設され前記マイクロ波発生装置
とマイクロ波伝達手段で連結された導波管と、該導波管
の外側でその長芋方向に複数段配設され独立して操作さ
れる複数個のコイルとを有し真空排気装置、放電ガス供
給装置がそれぞれ連結された装置において、前記コイル
の中で前記導波管の前記放電管を含まない部分に対応し
て最大磁場発生用のコイルを配設すると共に、導波管の
放電管を含まない部分の寸法を該放電管を含む部分の寸
法よりも小さえしたことを特徴とするマイクロ波プラズ
マ処理装置Ｏ1. A microwave generator, a discharge tube, a waveguide including the discharge tube, disposed concentrically outside the discharge tube and connected to the microwave generator by a microwave transmission means, and a waveguide of the waveguide. In an apparatus including a plurality of coils arranged in multiple stages in the direction of the potato on the outside and operated independently, and a vacuum exhaust device and a discharge gas supply device are connected to each other, the waveguide is connected to the coil in the coil. A coil for generating the maximum magnetic field is disposed corresponding to the portion of the waveguide that does not include the discharge tube, and the dimensions of the portion of the waveguide that does not include the discharge tube are made smaller than the dimensions of the portion that includes the discharge tube. A microwave plasma processing apparatus O characterized by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21234783A JPS60105234A (en) | 1983-11-14 | 1983-11-14 | Microwave plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21234783A JPS60105234A (en) | 1983-11-14 | 1983-11-14 | Microwave plasma processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60105234A true JPS60105234A (en) | 1985-06-10 |
Family
ID=16621030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21234783A Pending JPS60105234A (en) | 1983-11-14 | 1983-11-14 | Microwave plasma processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60105234A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63213344A (en) * | 1987-03-02 | 1988-09-06 | Hitachi Ltd | Plasma processing device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5341505A (en) * | 1976-09-07 | 1978-04-15 | Weyerhaeuser Co | Process for contact oxydation of pulping reactor leaving gas with oxygen |
| JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
| JPS5782474A (en) * | 1980-11-12 | 1982-05-22 | Hitachi Ltd | Microwave etching device |
-
1983
- 1983-11-14 JP JP21234783A patent/JPS60105234A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5341505A (en) * | 1976-09-07 | 1978-04-15 | Weyerhaeuser Co | Process for contact oxydation of pulping reactor leaving gas with oxygen |
| JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
| JPS5782474A (en) * | 1980-11-12 | 1982-05-22 | Hitachi Ltd | Microwave etching device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63213344A (en) * | 1987-03-02 | 1988-09-06 | Hitachi Ltd | Plasma processing device |
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