JPS60100755A - Gas sensor - Google Patents
Gas sensorInfo
- Publication number
- JPS60100755A JPS60100755A JP20957183A JP20957183A JPS60100755A JP S60100755 A JPS60100755 A JP S60100755A JP 20957183 A JP20957183 A JP 20957183A JP 20957183 A JP20957183 A JP 20957183A JP S60100755 A JPS60100755 A JP S60100755A
- Authority
- JP
- Japan
- Prior art keywords
- gas sensor
- sensitivity
- sno2
- added
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、ＳｎＯ２の抵抗値の変化を利用したガスセ
ンサの、改良に関スル。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement of a gas sensor that utilizes changes in the resistance value of SnO2.
添加物によりＳｎＯ２ガスセンサの特性を改善しようと
する試みは、数多くなされている。このような努力にも
かかわらず、未解決のまま残された問題として、Ｈ２や
エタノールへの経時変化が有る。Many attempts have been made to improve the characteristics of SnO2 gas sensors using additives. Despite these efforts, one issue that remains unresolved is the aging of H2 and ethanol.
即ち、ガスセンサを長期間使用すると、Ｈ２やエタノー
ルへの感度が徐々に増すのである。本発明者の実験によ
ると、Ｈ２やエタノールへの経時変化はガスセンサの使
用温度を高める程、著しくなることがわかった。That is, when a gas sensor is used for a long period of time, its sensitivity to H2 and ethanol gradually increases. According to experiments conducted by the present inventor, it was found that the change over time to H2 and ethanol becomes more significant as the temperature at which the gas sensor is used increases.
発明者は、５ｎｏ２に少量のＶ２Ｏ５を添加すると、Ｈ
２やエタノールへの経時変化を防止し１））ることを見
出した。次に、少量のＶ２Ｏ５を担持させたシリカコロ
イドやアルミナを、５ｎ０２と混合しても、同じ効果が
生ずることを見出した。The inventor discovered that when a small amount of V2O5 is added to 5no2, H
We have found that 1)) prevents the change over time to 2 and ethanol. Next, it was found that the same effect was produced even when silica colloid or alumina carrying a small amount of V2O5 was mixed with 5n02.
Ｓｎ ０２以外のものに加えたＶ２Ｏ５が、何故５ｎ０
２の経時変化を抑制するのかは、明らかでない。しかし
この発明は、この発見から始まる。そしてこの発明では
、小量のＶ２Ｏ５を添加したシリカやアルミナ等の耐熱
絶縁性物質を、ｓｎ ０２と混合することにより、Ｈ２
やエタノール等のアルコールガスへの、経時変化を防止
する。Why does V2O5 added to things other than Sn 02 become 5n0?
It is not clear whether it suppresses the change over time of 2. However, this invention begins with this discovery. In this invention, H2
Prevents changes over time to alcohol gases such as ethanol and ethanol.
以下に、各実施例を説明する。Each example will be described below.
ガスセンサの構造を、第１図に示す。このガスセンサ（
２）は、アルミナ製の絶縁管（４）に、一対の電極Ｆ６
１． （８１を取り付け、Ｓ、 ｏ２ガス感応股（１υ
）の抵抗値の変化を取り出すようにしだものである。そ
してヒータＯ９を絶縁管（４）に挿入し、ガスセンサ（
２）を加熱する。ガスセンサの構造には、多くの公知例
が有勺、ここに示したもの以外に種々のものを用いるこ
とができる。The structure of the gas sensor is shown in FIG. This gas sensor (
2) is a pair of electrodes F6 in an alumina insulating tube (4).
1. (Install 81, S, o2 gas sensitive crotch (1υ
) is designed to extract the change in resistance value. Then, insert the heater O9 into the insulating tube (4), and insert the gas sensor (
2) Heat. There are many known examples of gas sensor structures, and various structures other than those shown here can be used.
このガス感応膜（ｌＯ）は、ＳｎＯ２と、少量のＶ２Ｏ
５を添加した耐熱絶縁性物質との混合物からなるＯここ
に耐熱絶縁性物質としては、例えばＳｎ ｏ２の骨材で
あるａ−Ａｔ２０３やｒ−Ａｔ２０３、あるいは５ｎｏ
２の焼結剤であるシリカコロイド等の、 ５ｎｏ２と反
応してその感度を損ねないもので有れば良い。This gas-sensitive film (lO) consists of SnO2 and a small amount of V2O.
As the heat-resistant insulating material, for example, a-At203 or r-At203, which is an aggregate of SnO2, or 5no.
Any material that does not react with 5no2 and impair its sensitivity, such as silica colloid, which is the sintering agent of No. 2, may be used.
す１■のＶ２０５を添加しだα−Ａｔ２０３を用い、α
−Ａｔ２ｏ３ とＳｎＯ２との混合重量比を１：２．１
：１．２．５：１の３段階にわけ試験を行ったが、いず
れの試料でも同程度にＨ２やエタノールへの経時変化を
抑制することができた。またｓ；ｏ２換算で１２当９７
■のＶ２Ｏ５を添加しだ硅酸ヒドロシルを用いた場合、
５ｎ０２１００ｒ当υの、５ｉ０２換算での硅酸ヒドロ
シルの添加量を２ｒ、６Ｆ（７）２種にわけて試験を行
ったが、いずれも充分な効果が得られた。このように耐
熱絶縁性物質の添加量は自由に変えることができ、実用
上は骨材や焼結剤等の、おのおのの耐熱絶縁性物質が持
つＩ“有の性質に基づいて添加量を定めれば良い。Using α-At203 with 1 μm of V205 added, α
-Mixing weight ratio of At2o3 and SnO2 to 1:2.1
The test was conducted in three stages: 1.2.5:1, and all samples were able to suppress the change over time to H2 and ethanol to the same extent. Also 12 wins 97 in s; o2 conversion
When using hydrosyl silicate with the addition of V2O5,
A test was conducted with the amount of hydrosyl silicate added in terms of 5i02 equivalent to 5n02100r divided into two types: 2r and 6F(7), and sufficient effects were obtained in both cases. In this way, the amount of heat-resistant insulating material added can be changed freely, and in practice, the amount added is determined based on the I" property of each heat-resistant insulating material, such as aggregate and sintering agent. That's fine.
耐熱絶縁性物質１ｇ当りのＶ２Ｏ５の添加１ｊ（は、広
くとも５０μｆ〜５０ＴＩ９とし、次に好ましくは５０
μｍ〜２０ｍｆとし、最も好ましくは８０１）７〜３■
とする。Ｖ２Ｏ５の添加効果は、耐熱紀１糸１ミ物質１
１当り１００μ２の添加でも著しく太き（、ｉ宿加量を
増すとともに大きくなり、ｔ ｍｙ以」二の添７Ｊｌ］
で飽和する。ところでＶ２Ｏ５の添加量を不・必要に大
きくすると、各種ガスへの感度が低十するとともに、ガ
スセンサ（２）が高抵抗化し、力゛スーヒン−ＩＪ−＋
２１としての実用性が失なわれる。Ｖ２Ｏ５’ＩＩＡ力
１１量の上限は、耐熱絶縁性物質の種類により変化し、
−律に定めることができない。添加量の上限が最も低く
なったのは、α−ＡＡ２０３を用いた場合で、この場合
は、α−ＡＡ２０３１ ｆ当り２０ｍ７以下が好ましい
。しかしγ−ＡＡ２０３を用いた例では、１７当り５０
キの添加でも弊害は小さかった。The addition 1j of V2O5 per gram of heat-resistant insulating material is broadly 50 μf to 50 TI9, then preferably 50
μm to 20mf, most preferably 801)7 to 3■
shall be. The effect of adding V2O5 is as follows: heat resistance 1 yarn 1 material 1
Even with the addition of 100 μ2 per 1 ml, it becomes significantly thicker (it becomes larger as the amount of i addition increases, and 7 Jl of 2 additions per t my)
becomes saturated. By the way, if the amount of V2O5 added is increased unnecessarily or unnecessarily, the sensitivity to various gases will decrease, the resistance of the gas sensor (2) will increase, and the power
21 will be lost. The upper limit of V2O5'IIA force 11 varies depending on the type of heat-resistant insulating material,
-Cannot be established by law. The upper limit of the addition amount is the lowest when α-AA203 is used, and in this case, it is preferably 20 m7 or less per α-AA2031 f. However, in the example using γ-AA203, 50 per 17
Even with the addition of Ki, the adverse effects were small.
以下に、ガスセンサ（２）の試験例を、製造例とともに
説明する。Test examples of the gas sensor (2) will be described below along with manufacturing examples.
５００２１００ ｆ当ｐｏ、ｓｙ、のｐｄｏを担持させ
たものを用意する。ＰｄＯは、ガスへの感度と応答性の
改善釦用いるもので、Ｐ ｔ＋ＡＬＩ等の他の添加物に
代えても、あるいはなくても良い。5002100 Prepare one carrying pdo of fpo, sy. PdO is used to improve sensitivity and response to gases, and may be replaced with other additives such as Pt+ALI, or may be omitted.
２００メツシユパスのび−Ａｔ２０３に、金属バナジウ
ムを硝酸に溶解させた水溶液を含浸させ、乾燥後６５０
ｉに空気中で３０分間加熱し、０．１〜１０η／ ｔ
Ａｔ２０ａのＶ２Ｏ５を担持しだα−Ａｔ２０３を得る
。なお６５０℃への加熱で、バナジウムの化合物は熱分
解され、大部分がＶ２Ｏ５となる。バナジウムの存在形
態としては、Ｖ２Ｏ５の他に微量のＶ２Ｏ４等が含まれ
ると思われるが、添加したバナジウムが全てＶ２Ｏ５に
転化したものとして、添加量を示す。含浸法では高濃度
のＶ２Ｏ５を担持させることが難しいので、同じα−Ａ
ｔ２０３に５０〜／ｆ！Ａｔ２０３ノｖ２０５粉末を加
え、６５０℃に８０分間空気中で加熱し、高濃度のＶ２
Ｏ５を担持させだａ −Ａ７２０３を得ル。Ｖ２Ｏ５を
添加Ｌり（Ｚ −Ａｔ２０３を、α−Ａｔ２０３： ５
ｎ０２の重量比で１：２．１：１．２．５：Ｌに、５ｎ
０２と混合し、水に分散させて絶縁管（４）に塗布し、
７５０℃に１０分間空気中で加熱して、ガス感応膜（１
０）とする。次に、５ｍ７／ｌ Ａｔ２ｏ３ 、および
５０〜／ ？ Ａ７２０３のＶ２Ｏ５を含浸法により担
持させたγ−Ａｚ２ｏ３、（比表面積８０ｎ？、＃）を
得る。γ−Ａｔ２０３と３１０２の重量比を１＝１とし
て、ガス感応膜ｔ１０１とする。Ｖ２Ｏ５の添加やガス
感応膜の製造過程は、α−Ａｔ２０３の場合と同様とす
る。200 mesh pass extension - At203 is impregnated with an aqueous solution of metal vanadium dissolved in nitric acid, and after drying, 650
Heated in air for 30 minutes to 0.1-10η/t
α-At203 carrying V2O5 of At20a is obtained. Note that by heating to 650° C., the vanadium compound is thermally decomposed, and most of it becomes V2O5. Although it is thought that vanadium exists in a trace amount such as V2O4 in addition to V2O5, the added amount is shown assuming that all of the added vanadium has been converted to V2O5. Since it is difficult to support a high concentration of V2O5 with the impregnation method, the same α-A
50~/f on t203! Add At203nov205 powder and heat to 650°C for 80 minutes in air to obtain a high concentration of V2.
A-A7203 was obtained by carrying O5. Addition of V2O5 (Z-At203, α-At203: 5
The weight ratio of n02 is 1:2.1:1.2.5:L, 5n
02, dispersed in water and applied to the insulating tube (4),
The gas-sensitive membrane (1
0). Then 5 m7/l At2o3 and 50~/? γ-Az2o3 (specific surface area 80n?, #) on which V2O5 of A7203 was supported by an impregnation method was obtained. The weight ratio of γ-At 203 and γ-At 3102 is set to 1=1 to form a gas sensitive film t101. The addition of V2O5 and the manufacturing process of the gas-sensitive film are the same as in the case of α-At203.
またテトラエチ）ＶＶリケチー７５ｃｃに水２５ｃｃと
塩酸Ｑ、 ３ ｃｃを加え、３０分間かき交ぜて、硅酸
ヒドロゾＩしを得る。この硅酸ヒドロシルに、金属バナ
ジウムと硝酸との反応溶液を加え、５ｉ０２１ｊ’当９
７ηのバナジウム化合物（Ｖ２Ｏ５換算）を担持させる
。５ｎｏ２の塗膜を設けた絶縁管（４）を、バナジウム
化合物を担持させた硅酸ヒドロシル中に浸漬し、７５０
℃に１０分間空気中で加熱し、ヒドロシルのゲルへの分
解と、Ｖ２Ｏ５への熱分解とを行う。ここで、５ｉ０２
と５ｎ０２との重量比を、２：１００と、６：１００の
２種とする。Additionally, 25 cc of water and 3 cc of hydrochloric acid Q were added to 75 cc of VV Rickettsia, and the mixture was stirred for 30 minutes to obtain silicic acid hydrochloride. A reaction solution of metal vanadium and nitric acid was added to this hydrosilicic acid, and 5i021j' and 9
A vanadium compound of 7η (in terms of V2O5) is supported. The insulating tube (4) provided with a coating film of 5no2 was immersed in hydrosilicic acid supporting a vanadium compound, and
C. for 10 minutes in air to effect decomposition of the hydrosil into a gel and thermal decomposition to V2O5. Here, 5i02
The weight ratios of 5n02 and 5n02 are set to 2:100 and 6:100.
これらのガスセンサ（２）を、各５個ずつ用い、２５℃
−６５％ＲＨの雰囲気下で、測定を行う。Using 5 of each of these gas sensors (2), at 25°C.
Measurement is performed under an atmosphere of -65% RH.
各ガスの濃度をいずれも２０００ｐｐ、、とし、ガスセ
ンサ１２）の加熱温度を４００℃とする。ただしガスセ
ンサ１２）の加熱温度を凌えても、結果は変らない０
第２図に、１１当シ１ｍｙのＶ２Ｏ５を添加したα−Ａ
ｔ２０３を等重量の５ｎ０２と混合したガスセンサ（２
）の経時特性を示す。第３図に、Ｖ２Ｏ５無添加のα−
Ａｔ２ ｏ３を加えた他は、同一のものの経時特性を示
す。The concentration of each gas is set to 2000 pp, and the heating temperature of the gas sensor 12) is set to 400°C. However, even if the heating temperature of the gas sensor 12) is exceeded, the results will not change. Figure 2 shows α-A with 11/1 myV2O5 added.
Gas sensor (2
) shows the temporal characteristics of Figure 3 shows α- without V2O5 addition.
It shows the aging characteristics of the same product except that At2 o3 was added.
通電開始時の特性を見ると、各種ガスへの感度や抵抗値
（Ｒ８）は、変らない。しかしＶ２Ｏ５無添加のもので
は、Ｒ２やエタノールへの感度が経時的に増大する。一
方、Ｖ２Ｏ５を加えたものでは、経時変化が見られない
。Looking at the characteristics at the start of energization, the sensitivity to various gases and the resistance value (R8) do not change. However, with no V2O5 added, the sensitivity to R2 and ethanol increases over time. On the other hand, when V2O5 was added, no change over time was observed.
耐熱絶縁性物質の量や種類を変えた際の結果を表に示す
。なお各種ガスへの相対感度はほとんど同じであるので
、イソブタンへの感度のみを示す。The table shows the results when changing the amount and type of heat-resistant insulating material. Note that the relative sensitivity to various gases is almost the same, so only the sensitivity to isobutane is shown.
１ １ α−Ａｔ２０３ ５０ １Ｊ
２ １ α−Ａｔ２０３１００ １．２８ １ α−Ａ
ｌｚＯａ ２５０ １．２４ ０” １−ＡｌｔｘＯｓ
１００ ５．８５ ５ １．０５
６ ５０ １．０
７ ０秦 ５４０２ ６ ５．７
８ ７ Ｍｌ、０５
９ ７ ５口）２ ２ １．１
秦印は従来例
ｕｌ ａ縁体１ ｙ当りｙ） Ｖ２Ｏ５ｍ、１２１ ５
ＨＯ２１００ｆ当りの添加量１．３１ 通電１２０日後
のｆ［気伝導度と最初の！気伝導度との比、（４１空気
中の抵抗値とイソブタン中の抵抗値の比。1 1 α-At203 50 1J 2 1 α-At203100 1.28 1 α-A
lzOa 250 1.24 0” 1-AltxOs
100 5.85 5 1.05 6 50 1.0 7 0 Qin 5402 6 5.7 8 7 Ml, 05 9 7 5 units) 2 2 1.1 Qin mark is conventional example UL a edge 1 y per y) V2O5m, 121 5
Amount added per 100f of HO2 1.31 After 120 days of energization, f[air conductivity and initial! Ratio to air conductivity, (41 Ratio of resistance value in air to resistance value in isobutane.
１・１ ４Ｂ １１．８
１．１ ７２ １．７
１．１ ６２ ５２
４．７ ５２ ２０
１．０ ４７ ２１
１．０ ４５ ２５
４．８ ５９ １．２
１．０ ５７ １．５
１．０５ ６７ ０．９
耐熱絶縁性物質の種類や量によらず、Ｖ２Ｏ５による経
時変化の抑制効果が得られることがわかる。1・1 4B 11.8 1.1 72 1.7 1.1 62 52 4.7 52 20 1.0 47 21 1.0 45 25 4.8 59 1.2 1.0 57 1.5 1. 05 67 0.9 It can be seen that the effect of suppressing changes over time due to V2O5 can be obtained regardless of the type or amount of the heat-resistant insulating material.
次に、ＳｎＯ２とα−Ａｔ２０３とを重・量比で１：１
に混合したものを例に、Ｖ２Ｏ５の添加量の影響を検討
した。第４図に、経時変化の抑制効果を示し、その横軸
はα−Ａｔ２０３１７当りのＶ２Ｏ５量を、縦軸は通電
１２０日後の電気伝導度と最初の電気伝導度との比をあ
られす。０１■／ｆＡ７２０３の添加で、経時変化は著
しく抑制され、この効果は１ツ７ｙＡｔ２ｏ３以上の添
加で飽和する。Next, SnO2 and α-At203 were mixed in a weight/weight ratio of 1:1.
The effect of the amount of V2O5 added was investigated using as an example a mixture of V2O5 and V2O5. FIG. 4 shows the effect of suppressing changes over time, where the horizontal axis shows the amount of V2O5 per α-At20317, and the vertical axis shows the ratio of the electrical conductivity after 120 days of energization to the initial electrical conductivity. The addition of 01■/fA7203 significantly suppresses the change over time, and this effect is saturated when 17yAt2o3 or more is added.
Ｖ２Ｏ５を１〜／ｌＡｔ２０３より多く加えると、各種
ガスへの感度が低下し、ガスセンサ（２）の抵抗値が増
大する。これについての結果を第５図に示す。When V2O5 is added in an amount greater than 1 to /lAt203, the sensitivity to various gases decreases and the resistance value of the gas sensor (2) increases. The results are shown in FIG.
なおイソブタンとｃＨ４への感度を図示するが、他のガ
スへの感度も同様の挙動を示した。Ｖ２Ｏ５量を１０■
／ ｆ Ａｔ、２０：ｌとすると感度はかなシ低下１５
０〜／ ｒ Ａｔ２０３ とすると著しく低下する。し
かしＶ２Ｏ５量の上限は、耐熱絶縁性物質によシ変化し
、γ−Ａｔ ２０３の場合５０り／ ｙ Ａｚ２０３の
添加でも感度の低下は小さかった。（表の試料６）。Although the sensitivity to isobutane and cH4 is illustrated, the sensitivity to other gases also showed similar behavior. V2O5 amount 10■
/ f At, 20:l, the sensitivity decreases slightly 15
When it is set to 0~/r At203, it decreases significantly. However, the upper limit of the amount of V2O5 varies depending on the heat-resistant insulating material, and in the case of γ-At203, even when 50 ri/y of Az203 was added, the decrease in sensitivity was small. (Sample 6 in the table).
なお経時変化抑制の効果は、５ｎ０２を用いたガスセン
サ（２）にのみ有効で、Ｉｎ２Ｏ３やＺｌｌｏ を用い
たセンサには効果がなかった。またＶ２Ｏ５を５ｂ２０
３やＮｂ２Ｏ５、Ｔａ２０５に代えると、効果が失なわ
れた。Note that the effect of suppressing changes over time was effective only for the gas sensor (2) using 5n02, and was not effective for the sensors using In2O3 or Zllo. Also, V2O5 is 5b20
3, Nb2O5, and Ta205, the effect was lost.
以上説明したように、この発明ではガスセンサのＨ２や
エタノール等のアルコ−／レカースへの経時変化を防止
することができる。As explained above, according to the present invention, it is possible to prevent the gas sensor from changing over time into alcohol/recurse such as H2 or ethanol.
第１図は実施例のガスセンサの部分切り欠き図、第２図
は実施例のガスセンサの特性図、第３図は従来例のガス
センサの特性図である。
第４図、第５図は実施例のガスセンサの特性図である。
特許出願人
フィガロ技研株式会社
第１図
第２図
−６−ａｉｒ −０−Ｃ０
００
つｎ
Ｔｉｍｅ（ｄａｙ）
第３図
＠−ａ！ｒ −０−Ｃ０
Ｔｉｍｅ（ｄａｙ）
第４図
０ ０．１ １ １０ １００
１００Ｖ２０３（＠Ａ１２０３）FIG. 1 is a partially cutaway view of the gas sensor of the embodiment, FIG. 2 is a characteristic diagram of the gas sensor of the embodiment, and FIG. 3 is a characteristic diagram of a conventional gas sensor. FIG. 4 and FIG. 5 are characteristic diagrams of the gas sensor of the example. Patent applicant Figaro Giken Co., Ltd. Figure 1 Figure 2 -6-air -0-C0 00 Time (day) Figure 3 @-a! r -0-C0 Time (day) Fig. 4 0 0.1 1 10 100 100V203 (@A1203)
Claims (1)
サにおいて、 前記耐熱絶縁性物質に、Ｖ２Ｏ５を添加したことを特徴
とするガスセンサ。[Claims] II) A gas sensor comprising 5n02 mixed with a heat-resistant insulating substance, characterized in that V2O5 is added to the heat-resistant insulating substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20957183A JPS60100755A (en) | 1983-11-08 | 1983-11-08 | Gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20957183A JPS60100755A (en) | 1983-11-08 | 1983-11-08 | Gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60100755A true JPS60100755A (en) | 1985-06-04 |
Family
ID=16575031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20957183A Pending JPS60100755A (en) | 1983-11-08 | 1983-11-08 | Gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60100755A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60209159A (en) * | 1984-04-03 | 1985-10-21 | Nippon Muki Kk | Gas detecting element |
| CN104634830A (en) * | 2015-01-26 | 2015-05-20 | 南京大学 | PMMA-SnO2-based thin-film gas sensor for detecting methane |
| CN110988046A (en) * | 2019-10-30 | 2020-04-10 | 广州钰芯传感科技有限公司 | V capable of detecting ethanol gas2O5Preparation method of nano material and application of nano material in gas sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317440A (en) * | 1976-07-31 | 1978-02-17 | Sayama Seimitsu Kogyo Kk | Ball storage control system for pachinko game machine |
| JPS573681A (en) * | 1980-06-06 | 1982-01-09 | Youzou Seki | Automatic stop device for sewing machine |
-
1983
- 1983-11-08 JP JP20957183A patent/JPS60100755A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317440A (en) * | 1976-07-31 | 1978-02-17 | Sayama Seimitsu Kogyo Kk | Ball storage control system for pachinko game machine |
| JPS573681A (en) * | 1980-06-06 | 1982-01-09 | Youzou Seki | Automatic stop device for sewing machine |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60209159A (en) * | 1984-04-03 | 1985-10-21 | Nippon Muki Kk | Gas detecting element |
| JPH053541B2 (en) * | 1984-04-03 | 1993-01-18 | Nippon Muki Kk | |
| CN104634830A (en) * | 2015-01-26 | 2015-05-20 | 南京大学 | PMMA-SnO2-based thin-film gas sensor for detecting methane |
| CN110988046A (en) * | 2019-10-30 | 2020-04-10 | 广州钰芯传感科技有限公司 | V capable of detecting ethanol gas2O5Preparation method of nano material and application of nano material in gas sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5815731B2 (en) | Kemuri Oyobi Gasken Chisoshi | |
| KR870001258B1 (en) | Gas sensor | |
| US4251225A (en) | Method of detecting carbon monoxide | |
| JP6667192B2 (en) | Ammonia sensor element | |
| JPS6218865B2 (en) | ||
| JPS60100755A (en) | Gas sensor | |
| JP3053865B2 (en) | Sensor for detecting carbon monoxide | |
| JPS5814043B2 (en) | humidity sensor element | |
| EP0261275B1 (en) | A hydrogen gas detecting element and method of producing same | |
| JPS59105553A (en) | Gas detecting element | |
| JPH0468587B2 (en) | ||
| JP2544144B2 (en) | Gas sensor and manufacturing method thereof | |
| JP2570440B2 (en) | Gas sensor | |
| JPS6410774B2 (en) | ||
| JPH0226184B2 (en) | ||
| JPS5847018B2 (en) | gas sensing element | |
| JPS6128937B2 (en) | ||
| CN117554438A (en) | Pd/SnO 2 /g-C 3 N 4 Nano gas-sensitive composite material, preparation method thereof and application thereof in CO sensing | |
| JPH0380257B2 (en) | ||
| JPWO2006011202A1 (en) | Semiconductor gas sensor | |
| Fine | Density of Solutions of Ammonium Nitrate and Tetramethylammonium Nitrate in Nitric Acid. | |
| CN109917069A (en) | A kind of novel catalytic combustion type gas sensor | |
| JPS627497B2 (en) | ||
| JPS5840696B2 (en) | gas sensing element | |
| JPH0225457B2 (en) |