JPS599918A - )levelling method of wafer of reflection projection exposure device - Google Patents
)levelling method of wafer of reflection projection exposure deviceInfo
- Publication number
- JPS599918A JPS599918A JP57118531A JP11853182A JPS599918A JP S599918 A JPS599918 A JP S599918A JP 57118531 A JP57118531 A JP 57118531A JP 11853182 A JP11853182 A JP 11853182A JP S599918 A JPS599918 A JP S599918A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- level
- measuring
- leveling
- projection exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 21
- 238000006073 displacement reaction Methods 0.000 abstract description 13
- 230000003287 optical effect Effects 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract 1
- 239000003504 photosensitizing agent Substances 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 210000003127 knee Anatomy 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Projection-Type Copiers In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は反射投影露光装置のマスクパターンの結像面に
ウェハ表面を一致させるためにウェハの高さを所定の基
準面にレベリングする方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for leveling the height of a wafer to a predetermined reference plane in order to align the wafer surface with the imaging plane of a mask pattern of a cathode projection exposure apparatus.
第１図は従来技術に係るレベリング方法を用いるために
構成された反射投影露光装置の正面図である。FIG. 1 is a front view of a cathode projection exposure apparatus configured to use a leveling method according to the prior art.
ウェハ１およびマスク２はそれぞれステージ３．４の上
に搭載保持され、上記のテーブル３及び同４は走行テー
ブル乙の上に設置されている。The wafer 1 and the mask 2 are each mounted and held on a stage 3.4, and the above-mentioned tables 3 and 4 are installed on a traveling table B.
上記の走行テーブル６はエアベアリング（図示せず）に
より定盤５の上に図示左右方向の摺動自在なように支承
されている。この定盤５の上方に投影光学系７、アライ
メント光学系８、及び、ウェハ表面位置決め部９が支承
されている。The traveling table 6 is supported by an air bearing (not shown) on the surface plate 5 so as to be slidable in the left-right direction in the figure. A projection optical system 7, an alignment optical system 8, and a wafer surface positioning section 9 are supported above the surface plate 5.
定盤５の下方に設けられた光源１０から出た露光光はマ
スク２を通過し、投影光学系７によりウェハ１の上にマ
スク２のパターン像を結像させる。アライメント光学系
８の対物レンズ１１に対向してハーフミラ−１２が設置
されていて、ウェハ１のパターンとマスク２のパターン
トラ同時に観察しながらステージ６、同４を操作してパ
ターン合わせを行なうことができるようになっている。Exposure light emitted from a light source 10 provided below the surface plate 5 passes through the mask 2, and a pattern image of the mask 2 is formed on the wafer 1 by the projection optical system 7. A half mirror 12 is installed opposite the objective lens 11 of the alignment optical system 8, and the patterns can be aligned by operating the stages 6 and 4 while simultaneously observing the pattern of the wafer 1 and the pattern of the mask 2. It is now possible to do so.
上記の操作に伴ってウェハ１の表面をウェハ表面位置決
め部９によって所定の基準面にレベリングするには、走
行テーブル６を図示左方に摺動させてウェハ１をウェハ
表面位置決め部９の下方に位置させる。第２図はこの状
態におけるウェハ１の付近を示す拡大断面図である。In order to level the surface of the wafer 1 to a predetermined reference plane by the wafer surface positioning section 9 in accordance with the above operation, the traveling table 6 is slid to the left in the figure, and the wafer 1 is positioned below the wafer surface positioning section 9. position. FIG. 2 is an enlarged sectional view showing the vicinity of the wafer 1 in this state.
１３はウェハ１を搭載保持するための真空チャックであ
る。上記の真空吸着チャック１３は球面受座１４を介し
て上下動１９の上に回動自在に支承され、かつ、窒洞部
１５を真空源に連通して上記の回動を固定し得る構造に
なっている。13 is a vacuum chuck for mounting and holding the wafer 1; The vacuum suction chuck 13 is rotatably supported in a vertical motion 19 via a spherical seat 14, and has a structure in which the nitrogen cavity 15 is communicated with a vacuum source to fix the above rotation. It has become.
一方、ウエノ・表面位置決め部９にプレート１８が固定
されていて、このプレート１８に３本のビン１７が固着
されている。上記のビン１７の下端はウェハ１の表面を
レベリングすべき基準面よりも上方に設定した水平面Ａ
に揃えである。On the other hand, a plate 18 is fixed to the Ueno/surface positioning section 9, and three bottles 17 are fixed to this plate 18. The lower end of the bin 17 is a horizontal plane A set above the reference plane on which the surface of the wafer 1 is to be leveled.
It is aligned with.
従来技術を用いてウエノ・１をレベリングするには、空
洞１６に真空源を連通して真空チャック１６にウェハ１
を吸着し、空洞１５を大気に連通して真空チャック１３
０回動をフリーにしておいて上下軸１９を上昇させる。To level the wafer 1 using conventional techniques, a vacuum source is connected to the cavity 16 and the wafer 1 is placed in the vacuum chuck 16.
The vacuum chuck 13 connects the cavity 15 to the atmosphere.
The vertical shaft 19 is raised with the 0 rotation free.
ウエノ・１はビン１７に当接して水平面Ａに揃えられる
ので、空洞１５に真空源を連通して球面座１４の回動を
固定した後、上下軸１９を測定器（図示せず）の指示に
基づいて一定寸法だけ下降せしめてウエノ・１を基準面
に揃える。Since Ueno 1 is brought into contact with the bottle 17 and aligned with the horizontal plane A, a vacuum source is communicated with the cavity 15 to fix the rotation of the spherical seat 14, and then the vertical axis 19 is aligned with the direction of the measuring instrument (not shown). Based on this, lower the Ueno 1 by a certain distance to align it with the reference surface.
以上に説明した従来技術に係るレベリング方法において
は決起のような不具合がある。The leveling method according to the prior art described above has a problem such as a sudden rise.
（イ） ウェハ１の表面にビン１７を機械的に当接せし
めるため、ウェハ１の表面の感光剤被膜が損傷し、微粒
となって剥離して塵埃を生じ、ウェハ１に付着してその
品質を低下させる虞れがある。(b) Since the bottle 17 is brought into mechanical contact with the surface of the wafer 1, the photosensitive agent coating on the surface of the wafer 1 is damaged and peeled off as fine particles, producing dust, which adheres to the wafer 1 and deteriorates its quality. There is a risk of lowering the
（ロ） ビン１７の先端が接触によって摩耗するのでメ
インテナンスを必要とし、手数がかかる。(b) Since the tip of the bottle 17 wears out due to contact, maintenance is required and time consuming.
（／Ｊ ウェハ１０レベルを水平面Ａに揃えた後、基準
面まで下降させる場合、その下降量を表示する測定器の
ドリフトによってウェハ１のレベルに誤差を生じる。(/J After aligning the wafer 10 level with the horizontal plane A, when lowering it to the reference plane, an error occurs in the level of the wafer 1 due to drift of the measuring instrument that displays the amount of the lowering.
本発明は上記の事情に鑑みて為され、ウエノ・の感光剤
被膜を傷つける虞れが無く、摩耗によってメインテナン
スの手数をかけることなく、その上、ウェハ１の水平を
出した後に測定器のドリフトによってレベリング誤差を
混入させることの無い反射投影露光装置のウエノ・レベ
リング方法を提供することを目的とする。The present invention has been made in view of the above circumstances, and there is no risk of damaging the photosensitive agent coating of the wafer, and there is no need for maintenance due to wear, and in addition, the drift of the measuring instrument after leveling the wafer 1 is avoided. An object of the present invention is to provide a Ueno leveling method for a reflection projection exposure apparatus that does not introduce leveling errors.
上記の目的を達成するため、本発明はウエノ１の表面を
基準面に揃えるためにレベリングを行なう方法において
、ウェハ表面のレベルを非接触的に測定すると共に、上
記のレベルを測定する手段によって基準面位置を測定し
、上記双方の測定値を比較してその差を減少させる方向
にウェハを上下方向に駆動することを特徴とする。In order to achieve the above object, the present invention provides a leveling method for aligning the surface of a wafer 1 with a reference surface, in which the level of the wafer surface is measured in a non-contact manner, and the level is measured using the above-mentioned level measuring means. The method is characterized in that the surface position is measured, the two measured values are compared, and the wafer is driven vertically in a direction that reduces the difference.
第３図は本発明に係るウェハレベリング方法を実施する
ために構成したウェハレベリング装置の一例を示し、従
来方法を実施するために構成した装置を示す第１図に対
応する図である。FIG. 3 shows an example of a wafer leveling apparatus configured to implement the wafer leveling method according to the present invention, and is a diagram corresponding to FIG. 1 showing an apparatus configured to implement the conventional method.
第３図に示した装置において第１図と同一の図面参照番
号を付したウエノ・１、マスク２、ステージ４、定盤５
、走行ステージ６、投影光学系７、アライメント光学系
８、及び光源１０は第１図九ついて説明した構成部材と
同様の構成部材である。In the apparatus shown in Fig. 3, Ueno 1, mask 2, stage 4, and surface plate 5 are given the same drawing reference numbers as in Fig. 1.
, the traveling stage 6, the projection optical system 7, the alignment optical system 8, and the light source 10 are the same structural members as those described with reference to FIG.
ステージ３は第１図に示ｌ、７たステージ３と類似の構
成部材であるが、このステージ３によってウェハ１を支
承する手段の構成については第４図について後述する。The stage 3 has similar components to the stages 1 and 7 shown in FIG. 1, and the structure of the means for supporting the wafer 1 by this stage 3 will be described later with reference to FIG.
ステージ３と同４との中間に、第５図について後述する
基準面ブロック３２を設けて走行テーブル６に固定する
。上記の基準面ブロック３２の上方に位置するごとくウ
ェハ表面位置決め部３９を設け、定盤５に対して固定す
る。A reference plane block 32, which will be described later with reference to FIG. 5, is provided between the stages 3 and 4 and is fixed to the traveling table 6. A wafer surface positioning section 39 is provided above the reference plane block 32 and fixed to the surface plate 5.
走行テーブル６を図示右方に摺動させるとウェハ１を搭
載したステージ３がウェハ表面位置決め部６９の下方に
来る。第４図にその状態を示す。When the traveling table 6 is slid to the right in the drawing, the stage 3 on which the wafer 1 is mounted comes to be below the wafer surface positioning section 69. FIG. 4 shows the state.
ウェハ表面位置決め部６９はプレート１８に３個の非接
触変位計２１を固着してなる。２８は変位検出器、２９
はコンピュータである。The wafer surface positioning section 69 is made up of three non-contact displacement gauges 21 fixed to the plate 18. 28 is a displacement detector, 29
is a computer.
ステージ３に対して真空チャック１３を電歪素子２０で
支承する。２５は真空チャック１３を電歪素子２０に尚
接せしめてその姿勢を安定させるためのテンションスプ
リングである。A vacuum chuck 13 is supported on the stage 3 by an electrostrictive element 20. Reference numeral 25 denotes a tension spring for keeping the vacuum chuck 13 in contact with the electrostrictive element 20 and stabilizing its posture.
上記の電歪素子２０けコンピータ２９によシＤ／Ａ変換
器５０及びドライバ３１を介して駆動される。The 20 electrostrictive elements described above are driven by the computer 29 via the D/A converter 50 and the driver 31.
走行テーブル６を摺動させて基準面ブロック３２を非接
触変位計２１の下方に位置せしめたところを第５図に示
す。基準面ブロック５２は精密な段差寸法Δを有する２
段形状に形成し、下段３２αが基準面Ｂと一致するよう
に、そして上段３２ｂが微小寸法ｔを介して非接触変位
計２１に対向するように構成する。FIG. 5 shows a state in which the traveling table 6 is slid to position the reference plane block 32 below the non-contact displacement meter 21. The reference plane block 52 has a precise step dimension Δ2.
It is formed into a stepped shape, with the lower step 32α coinciding with the reference plane B, and the upper step 32b facing the non-contact displacement meter 21 via the minute dimension t.
次に上述の装置を用いて本発明方法を実施する一例を説
明する。Next, an example of implementing the method of the present invention using the above-mentioned apparatus will be described.
第５図に示したように基準面ブロック６２を変位計２の
下方に位置せしめて寸法ｔを計測する。As shown in FIG. 5, the reference plane block 62 is positioned below the displacement meter 2, and the dimension t is measured.
これにより既知の寸法Δを用いてｔ＋Δの値を算出する
。次いで第４図のようにウェハ１を変位計２１の下方に
位置せしめ、ウェハ１と変位計２１との間の距離を計測
し、この計測値をコンピュータ２９によって前述の寸法
ｔ＋Δと比較し、両者の差を減少させる方向に、Ａ／Ｄ
変換器３０及びドライバ３１を介して電歪素子２０を駆
動する。Thereby, the value of t+Δ is calculated using the known dimension Δ. Next, as shown in FIG. 4, the wafer 1 is positioned below the displacement meter 21, and the distance between the wafer 1 and the displacement meter 21 is measured. A/D
The electrostrictive element 20 is driven via the converter 30 and driver 31.
３個の変位計２１とウェハ１との間の距離がそれぞれｔ
＋Δに揃うと、ウェハ１の表面は基準面に一致する。The distance between the three displacement meters 21 and the wafer 1 is t.
+Δ, the surface of the wafer 1 coincides with the reference plane.
本実施例のごとく基準面が既知の段差Δを有する複数の
平面によって構成されていると、ｔ＋Δを計測する場合
に４寸法のみ実測してｔ＋Δを演算によって求めること
ができるため、寸法Δに計測誤差が混入せず、精密な計
測が容易である。If the reference plane is composed of a plurality of planes having a known step difference Δ as in this example, when measuring t+Δ, it is possible to actually measure only four dimensions and calculate t+Δ, so the measurement can be made to the dimension Δ. Precise measurement is easy without introducing errors.
温度管理を適切に行なえば熱膨張による誤差の混入は防
止し、若しくは補正することができる。Appropriate temperature control can prevent or correct errors caused by thermal expansion.
本発明方法を実地に適用する場合、上述の基準面として
既知の段差を有しない基準面ブロック（図示せず）を用
いて前述の４寸法を毎回測定することにより測定器のオ
フセットを補正して正確々レベリングを行なうことも可
能である。When the method of the present invention is actually applied, the offset of the measuring instrument is corrected by measuring the four dimensions described above each time using a reference surface block (not shown) having no known steps as the reference surface. It is also possible to perform accurate leveling.
この実施例によれば、長期間の使用による非接触変位計
２１の劣化によるゲイン変動を考慮する必要が無い場合
に簡便に正確なレベリングができる。According to this embodiment, accurate leveling can be easily performed when there is no need to consider gain fluctuations due to deterioration of the non-contact displacement meter 21 due to long-term use.
しかし、前記の非接触変位計２１は長期間の使用による
劣化、その他の原因でゲイン変動を生じる虞れがある。However, the non-contact displacement meter 21 may suffer from deterioration due to long-term use or gain fluctuations due to other causes.
このゲイン変動を算出して補正し、長期間にわたって信
頼性の高い精密なレベリングを行なうには次記の方法に
よる。The following method is used to calculate and correct this gain variation and perform highly reliable and precise leveling over a long period of time.
測定器にゲイン変動を生じた場合、次記の関係式が成立
する。When gain fluctuation occurs in the measuring instrument, the following relational expression holds true.
δ＝ ｔ’ −ｔ
！＝Δ′／Δ
ただし
ｔ’： −ｔに対応する測定値
Δ′ニーΔに対応する測定値
δニーオフセット
Ｉニー測定ゲイン変動
第４図の状態でウェハ１の高さを複数個所Ｃ本実施例に
おいては３個所）測定し、前記の補正量を加味して最小
自乗法によってウェハ１の表面の近似表面を求め、予め
求めておいたマスクパターン結像面である基準面Ｂとの
差を計算し、この差が零となるように電歪素子２０の駆
動量をコンピュータ２９で算出して補正する。δ=t'-t! = Δ'/Δ However, t': - Measured value corresponding to t Δ' Measured value corresponding to knee Δ δ Knee offset I Knee measurement gain variation Conducted at multiple locations C at the height of wafer 1 under the condition shown in Fig. 4 In the example, the approximate surface of the surface of the wafer 1 is determined by the least squares method, taking into account the above correction amount, and the difference from the reference surface B, which is the mask pattern imaging surface determined in advance, is calculated. The drive amount of the electrostrictive element 20 is calculated and corrected by the computer 29 so that this difference becomes zero.
以上のようにしてウェハ１の表面ヲマスクパターンの結
像面に一致させた後、ウェハ１がハーフミラ−１２の下
方に位置するように走行テーブル６を移動させてパター
ン合わせ及び転写を行なう。この実施例によれば非接触
変位計のゲイン変動を自動的に算出して補正し、長期間
にわたって信頼性の高い精密なレベリングを行なうこと
ができる。After the surface of the wafer 1 is aligned with the image plane of the mask pattern as described above, the traveling table 6 is moved so that the wafer 1 is positioned below the half mirror 12 to perform pattern alignment and transfer. According to this embodiment, gain fluctuations of the non-contact displacement meter are automatically calculated and corrected, and highly reliable and precise leveling can be performed over a long period of time.
以上詳述したように、本発明を適用してウェハ表面のレ
ベルを非接触的に測定すると共に、上記のウェハ表面を
測定する手段を用いて基準面を測定し、上記双方の測定
値を比較してその差を減少させる方向にウェハを駆動す
ると、ウェハ１の表面に他の物体が機械的に接触するこ
とが無いので、ウェハ表面の感光剤被膜が破壊されて塵
埃を発生する虞れが無い。またウエノ・１との接触によ
って摩耗する個所が無いのでメインティナンスの手数が
少−＆＜、ウェハ１の水平を出すと同時にレベリングを
行なうので水平を出した後に測定器のドリフトによって
レベリング誤差が混入する虞れが無いという優れた実用
的効果が得られる。As detailed above, the present invention is applied to measure the level of the wafer surface in a non-contact manner, the reference surface is measured using the above-mentioned means for measuring the wafer surface, and the measured values of both are compared. When the wafer is driven in a direction that reduces the difference, other objects will not come into mechanical contact with the surface of the wafer 1, so there is a risk that the photosensitive agent coating on the wafer surface will be destroyed and dust will be generated. None. In addition, since there are no parts that wear out due to contact with the wafer 1, the number of maintenance steps is reduced. Since leveling is performed at the same time as the wafer 1 is leveled, there is no possibility of leveling errors due to drift of the measuring instrument after the wafer 1 is leveled. An excellent practical effect can be obtained in that there is no risk of contamination.
第１図は従来技術に係るウェハレベリング方法を実施す
るために構成された従来形レベリング装置を備えた反射
投影露光装置の正面図、第２図は上記のレベリング方法
の説明図、第３図は本発明方法を実施するために構成し
たレベリング装置を備えた反射投影露光装置の正面図、
第４図および第５図は本発明方法の説明図である。
１・・・ウェハ ２・・・マスク１３・・・
真空チャック １４・・・球面座１８・・・プレー
ト２０・・・電歪素子２１・・・非接触変位形 ２
９・・・コンビーータ３０・・・Ｉ）／Ａコンビューク
６１・・・ドライバ３２・・・基準面ブロックFIG. 1 is a front view of a reflection projection exposure apparatus equipped with a conventional leveling device configured to implement a wafer leveling method according to the prior art, FIG. 2 is an explanatory diagram of the above leveling method, and FIG. A front view of a reflection projection exposure apparatus equipped with a leveling device configured to carry out the method of the present invention,
4 and 5 are explanatory diagrams of the method of the present invention. 1... Wafer 2... Mask 13...
Vacuum chuck 14... Spherical seat 18... Plate 20... Electrostrictive element 21... Non-contact displacement type 2
9... Conbeater 30... I)/A Conbuque 61... Driver 32... Reference plane block
Claims (1)
を行なう方法において、ウェハ表面のレベルを非接触的
に測定すると共に、上記のウェハ表面を測定する手段に
より基準面を測定し、上記双方の測定値を比較してその
差を減少させる方向にウェハを駆動することを特徴とす
る反射投影露光装置のウエノ・レベリング方法。 ２、 前記のレベル測定手段を用いて測定する基準面は
、既知の段差量を有する複数の平面からなるものとした
ことを特徴とする特許請求の範囲第１項に記載の反射投
影露光装置のウェハレベリング方法。 ３、前記のレベル測定手段を用いて測定する基準面は、
段差の無い平面からなるものとしたことを特徴とする特
許請求の範囲第１項に記載の反射投影露光装置のウェハ
レベリング方法。[Claims] 1. In a method for leveling the wafer so that the surface is aligned with a reference plane, the level of the wafer surface is measured in a non-contact manner, and the reference plane is measured by the above-mentioned means for measuring the wafer surface. A wafer leveling method for a reflection projection exposure apparatus, characterized in that the two measured values are compared and the wafer is driven in a direction that reduces the difference. 2. The reflective projection exposure apparatus according to claim 1, wherein the reference plane to be measured using the level measuring means is made up of a plurality of planes having a known level difference. Wafer leveling method. 3. The reference plane to be measured using the above level measuring means is:
A wafer leveling method for a reflection projection exposure apparatus according to claim 1, wherein the wafer leveling method is a flat surface having no steps.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118531A JPS599918A (en) | 1982-07-09 | 1982-07-09 | )levelling method of wafer of reflection projection exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118531A JPS599918A (en) | 1982-07-09 | 1982-07-09 | )levelling method of wafer of reflection projection exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS599918A true JPS599918A (en) | 1984-01-19 |
Family
ID=14738897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57118531A Pending JPS599918A (en) | 1982-07-09 | 1982-07-09 | )levelling method of wafer of reflection projection exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599918A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6128445A (en) * | 1984-07-20 | 1986-02-08 | Oak Seisakusho:Kk | Apparatus for irradiating ultraviolet rays |
-
1982
- 1982-07-09 JP JP57118531A patent/JPS599918A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6128445A (en) * | 1984-07-20 | 1986-02-08 | Oak Seisakusho:Kk | Apparatus for irradiating ultraviolet rays |
| JPH0456289B2 (en) * | 1984-07-20 | 1992-09-08 | Ooku Seisakusho Kk |
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