JPS5996277A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS5996277A
JPS5996277A JP20597282A JP20597282A JPS5996277A JP S5996277 A JPS5996277 A JP S5996277A JP 20597282 A JP20597282 A JP 20597282A JP 20597282 A JP20597282 A JP 20597282A JP S5996277 A JPS5996277 A JP S5996277A
Authority
JP
Japan
Prior art keywords
electrode
dry etching
etching
power source
coupling method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20597282A
Other languages
Japanese (ja)
Inventor
Seiji Sagawa
誠二 寒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP20597282A priority Critical patent/JPS5996277A/en
Publication of JPS5996277A publication Critical patent/JPS5996277A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enable dry etching with less damage on an underlying material in the stage of etching the film on a semiconductor substrate with a dry etching device of a parallel flat plate electrode type by making the polarities of an upper electrode and a lower electrode changeable. CONSTITUTION:An RF power source 6 is made selectively connectable by an upper electrode 1 and a lower electrode 4 in a dry etching device of a parallel flat plate electrode type by means of selection switches 8, 8', 8'', respectively. If the electrode 1 is grounded and the electrode 4 is connected to the power source 6, the oxide film on the surface of the semiconductor wafer 3 placed on the electrode 4 can be etched by the dry etching of a cathode coupling system. If the power source 6 is connected to the electrode 1 and the electrode 4 is grounded by changing over the switches, the etching by an anode coupling system is executed. The advantages of the above-mentioned two systems are provided, whereby the dry etching is accomplished with less damage to the underlying material.

Description

【発明の詳細な説明】 の種装置において半導体基板上に形成された膜を工，チ
ングする場合に間頂となるホトレジストや下地物質との
選択性，あるいはプラズマ照射によっておこる素子特性
への影響を改善することができるドライエツチング装置
を提供しようとするものである。[Detailed Description of the Invention] When a film formed on a semiconductor substrate is etched or etched using a seed device, the selectivity with respect to the photoresist or underlying material that is the top layer, or the influence on device characteristics caused by plasma irradiation is investigated. It is an object of the present invention to provide a dry etching device that can be improved.

半導体装置におけるパターン形成にドライエツチングを
利用するのは非常に有効である。特に。Dry etching is very effective in forming patterns in semiconductor devices. especially.

平行平板電極型ドライエツチング装置においてＲＦ電源
供給方式としてカソードカップリング方式を用いリアク
ティブイオンエツチングを行なうと，ス・ぐノタ効果の
強い異方性エツチングを行なうことができる。しかしこ
の方式はレノスト，下地物質へ損傷を与え，選択性も悪
いという欠点がある。一方，アノードカップリング方式
を用いプラズマエノチングを行なうと，化学的エツチン
グの強い等方性エツチングを行なうことができる。When reactive ion etching is performed using a cathode coupling method as an RF power supply method in a parallel plate electrode type dry etching apparatus, anisotropic etching with a strong S-Gunota effect can be performed. However, this method has the drawbacks of damaging the lenost and underlying material and having poor selectivity. On the other hand, when plasma etching is performed using an anode coupling method, isotropic etching with strong chemical etching can be performed.

本発明は，上記カソードカップリング方式及びアノード
カップリング方式の特長を兼ね備えたドライエツチング
装置を提供することを目的とする。An object of the present invention is to provide a dry etching apparatus that combines the features of the cathode coupling method and the anode coupling method.

以下に本発明の詳細な説明する。The present invention will be explained in detail below.

第１図は本発明を平行平板電極枚葉型（一枚型）ドライ
エツチング装置に適用した一実施例の基本構成図である
。FIG. 1 is a basic configuration diagram of an embodiment in which the present invention is applied to a parallel plate electrode sheet type (single sheet type) dry etching apparatus.

図において，上部電極１と下部電極４にそれぞれ、切換
えスイッチ８によりＲＦ電源６が切換え接続できるよう
にされている。２はガス注入口。In the figure, an RF power source 6 can be selectively connected to the upper electrode 1 and the lower electrode 4 by a changeover switch 8, respectively. 2 is the gas inlet.

３はウェハー、５はマツチングボックス、７は排気口で
ある。８′、８“はそれぞれ、スイッチ８と連動してア
ースの切り換えを行なう切換えスイッチである。3 is a wafer, 5 is a matching box, and 7 is an exhaust port. 8' and 8'' are changeover switches that operate in conjunction with switch 8 to switch the ground.

このような構成によシ、スイッチ８を端子ａ側に切シ換
えると、下部電極４にＲＦ電源６が接続され、上部電極
ｌはアースされてカソードカップリング方式によるエツ
チングが行なわれる。一方。With this configuration, when the switch 8 is switched to the terminal a side, the RF power source 6 is connected to the lower electrode 4, the upper electrode 1 is grounded, and etching is performed by the cathode coupling method. on the other hand.

スイッチ８を端子す側に切り換えると、上部電極１にＲ
Ｆ電源６が接続され、下部電極４はアースされてアノー
ドカップリング方式によるエツチングが行なわれる。When switch 8 is switched to the terminal side, R is applied to upper electrode 1.
The F power source 6 is connected, the lower electrode 4 is grounded, and etching is performed by an anode coupling method.

すなわち、　１００　ｍＴｏｒｒ以下の圧力下において
は、カソードカップリング方式ではイオンシースができ
るが、アノ−ドカ、ｆリング方式ではできないことに起
因している。このためアノードカップリング方式では等
方性エツチングとなる。この性質を利用して１　’ＯＯ
ｍ　Ｔｏｒｒ以下の圧力でアノードカップリング方式と
カソードカップリング方式とを切シ換えることでエツチ
ングの方向性を変化させることができ、被エツチング物
質に応じて異方性エツチングと等方性エツチングとを使
い分けることができる。したがって２例えばはじめにカ
ソードカッシリング方式による異方性エツチングを行な
い、エツチング終了直前にアノードカップリング方式に
よる等方性エツチングを行なうことによシ、下地物質へ
のダメージ等を少なくすることができる。しかし、アノ
ードカップリング方式あるいはカソードカッシリング方
式のいずれを先に行なうかは、エツチングの態様に応じ
て決められ、各方式の切シ換えタイミングも同様に決め
られる。That is, under a pressure of 100 mTorr or less, an ion sheath can be formed with the cathode coupling method, but this is not possible with the anode coupling method. Therefore, the anode coupling method results in isotropic etching. Using this property, 1 'OO
The directionality of etching can be changed by switching between an anode coupling method and a cathode coupling method at a pressure of less than m Torr, and anisotropic etching and isotropic etching can be performed depending on the material to be etched. Can be used differently. Therefore, for example, damage to the underlying material can be reduced by first performing anisotropic etching using a cathode cassilling method and then performing isotropic etching using an anodic coupling method immediately before the end of etching. However, which of the anode coupling method and the cathode cassilling method is performed first is determined depending on the manner of etching, and the switching timing for each method is determined in the same way.

本発明は９例えば第２図に示すように、　Ｓｔ基板９上
の５ｉ０２膜１０にコンタクトホール１２を形成しＡｔ
膜１１を形成するような場合にも有効である。For example, as shown in FIG. 2, a contact hole 12 is formed in a 5i02 film 10 on an St substrate 9, and an At
It is also effective when forming the film 11.

チングを行なうことによシテー・ぐを有する欠を形成し
２次にスイッチ８を端子ａに切シ換えて方向性を持つ異
方性エツチングを行なうことによシ。By performing etching, a notch having a siting hole is formed, and then by switching switch 8 to terminal a and performing anisotropic etching with directionality.

穴すを形成して図示の如く上部にチーｉ４　ａを有する
コンタクトホール１２が形成される。このコンタクトホ
ールによれば、Ａｔ膜１１を形成する際のスデップカバ
レッジを良好にすることができる。A contact hole 12 having a tip i4a at its upper portion is formed as shown in the figure. According to this contact hole, it is possible to improve the dip coverage when forming the At film 11.

以上説明してきたように８本発明によればアノードカッ
プリング方式とカソードカップリング方式との特長を兼
ね備えることができ、半導体基板上に形成された膜をエ
ツチングする際に問題となるホトレジスト膜や下地物質
との選択性、あるいはプラズマ照射によっておこ盃素子
特性への影響という問題点を改善することができる。勿
論２本発明は平行平板電極型のドライエツチング装置全
般に適用可能である。As explained above, according to the present invention, the features of the anode coupling method and the cathode coupling method can be combined, and the photoresist film and base layer, which are problems when etching a film formed on a semiconductor substrate, can be used. It is possible to improve the problem of selectivity with the substance or the influence on the characteristics of the sake cup element by plasma irradiation. Of course, the present invention is applicable to all parallel plate electrode type dry etching apparatuses.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明を適用したドライエツチング装置の基本
構成図、第２図はこの装置を用いてエツチングした例を
示す。 図中、１は上部電極、２はガス注入口、３はウェハー、
４は下部電極、５はマツチングボックス。 ６はＲＦ定電源’８．８’、８“は切換えスイッチ、９
は８１基板、１０は５１０２膜、１１はＡｔ膜。FIG. 1 is a basic configuration diagram of a dry etching apparatus to which the present invention is applied, and FIG. 2 shows an example of etching using this apparatus. In the figure, 1 is the upper electrode, 2 is the gas injection port, 3 is the wafer,
4 is the lower electrode, 5 is the matching box. 6 is the RF constant power supply '8.8', 8" is the changeover switch, 9
81 substrate, 10 5102 film, 11 At film.

Claims (1)

【特許請求の範囲】[Claims] １、　平行平板電極型ドライエ、チング装置において、
アノードカップリング方式による電源供給系とカソード
カップリング方式による電源供紹系とを備え、上記二種
のカップリング方式を任意に切シ換え可能な機構を有す
ることを特徴とするドライエ、チング装置。1. In a parallel plate electrode type dryer and ching device,
A drying and drying device comprising a power supply system using an anode coupling method and a power supply system using a cathode coupling method, and having a mechanism capable of arbitrarily switching between the two types of coupling methods.
JP20597282A 1982-11-26 1982-11-26 Dry etching device Pending JPS5996277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20597282A JPS5996277A (en) 1982-11-26 1982-11-26 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20597282A JPS5996277A (en) 1982-11-26 1982-11-26 Dry etching device

Publications (1)

Publication Number Publication Date
JPS5996277A true JPS5996277A (en) 1984-06-02

Family

ID=16515760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20597282A Pending JPS5996277A (en) 1982-11-26 1982-11-26 Dry etching device

Country Status (1)

Country Link
JP (1) JPS5996277A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250165A (en) * 1991-12-09 1993-10-05 Motorola, Inc. Controlled isotropy reactive ion etcher for multi-stepped sloped contact etch process
JPH0778700A (en) * 1993-09-08 1995-03-20 Anelva Corp Plasma processing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250165A (en) * 1991-12-09 1993-10-05 Motorola, Inc. Controlled isotropy reactive ion etcher for multi-stepped sloped contact etch process
JPH0778700A (en) * 1993-09-08 1995-03-20 Anelva Corp Plasma processing device

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