JPS5996265A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS5996265A
JPS5996265A JP20461982A JP20461982A JPS5996265A JP S5996265 A JPS5996265 A JP S5996265A JP 20461982 A JP20461982 A JP 20461982A JP 20461982 A JP20461982 A JP 20461982A JP S5996265 A JPS5996265 A JP S5996265A
Authority
JP
Japan
Prior art keywords
substrate
atom
target
thin film
accelerated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20461982A
Other languages
Japanese (ja)
Inventor
Minoru Kametani
亀谷　実
Genichi Watanabe
渡辺　源一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP20461982A priority Critical patent/JPS5996265A/en
Publication of JPS5996265A publication Critical patent/JPS5996265A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering

Abstract

PURPOSE:To enable formation of a thin film having high adhesive strength with high efficiency by providing a hot cathode and a grid in the space between a target and a substrate, ionizing the atom released from the target, and accelerating and sticking the same to a negatively electrified substrate. CONSTITUTION:The atom driven from a target 6 in a vacuum vessel 1 is ionized by a hot cathode 4 and a grid 5 and is accelerated in the direction of a substrate 7 electrified minus and collides against the substrate thus sticking thereto. As a result, the effect like bias sputtering is imparted to the substrate 7 and the decrease in efficiency occuring in the non-directivity of the released atom such as in the prior sputtering method is eliminated. The atom is ionized and is accelerated by the potential gradient and since the atom is stuck to the substrate 7 in such a way, a thin film having high adhesive strength is obtd.

Description

【発明の詳細な説明】 本発明は、通常のスパッタ法にイオンブレーティング法
におけるクラスタイオンビーム法を組合せた高効率のス
パッタ装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a highly efficient sputtering apparatus that combines a normal sputtering method with a cluster ion beam method in an ion blasting method.

スパック法においては、ターゲットからただと出された
原子は真空蒸着法の約１００倍のエネルギを持って飛出
すが、途中二次電子等との再衝突によってサブストレー
ト（基板）に到達するときはそのエネルギはかなり減少
している。しかも、スパッタによる原子は無指向性なの
でサブストレートに直接人則しでくる原子は少ないと思
われる。In the spuck method, atoms that are just ejected from the target fly out with approximately 100 times more energy than in vacuum evaporation, but when they reach the substrate due to re-collision with secondary electrons etc. Its energy has been significantly reduced. Furthermore, since atoms produced by sputtering are non-directional, it is thought that few atoms arrive directly on the substrate.

このため高い効率を行たり、充分なイτ］着強度の薄膜
を形成するには問題がある。Therefore, there are problems in achieving high efficiency and forming a thin film with sufficient adhesion strength.

一方、イオンブレーティング法におけるクラスタイオン
ビーム法は、吹き出してくる原子を次の部屋で加速して
サブストレートに（＝ｊ着させ、・１・Ｊ着強度の高い
Ｍ７，膜をつくるものである。しかし、装置が複雑にな
る要素を持っている。On the other hand, in the cluster ion beam method of the ion blating method, the ejected atoms are accelerated in the next chamber and deposited on the substrate (=j, creating an M7 film with high ・1・J adhesion strength. However, there are elements that make the device complicated.

そこで、本発明は通常のスパッタ法とクラスタイオンビ
ーム法の／！：（埋とを組合せ、高い効率でしかも付着
強度の高い薄膜を形成可能な又バッタ装置を提供しよう
とするものである。Therefore, the present invention combines the conventional sputtering method and the cluster ion beam method. : (This is an attempt to provide a battering device that can form a thin film with high efficiency and high adhesion strength by combining burying and burying.

以下、本発明に係るスパッタ装置の実施例を図面に従っ
て説明する。Embodiments of the sputtering apparatus according to the present invention will be described below with reference to the drawings.

図において、真空容器１には矢印Ｘの如くアルゴン等の
不活性気体が極く低圧で導入されるようになっており、
この真空容器１の一端部にはクープントホルダ２が、他
端部にはサブストレートホルグ３か配置されている。そ
してターゲットホルり２とサブス）・レートホルダ３と
の開の空間に熱陰極・４及びグリッド５が設けられる。In the figure, an inert gas such as argon is introduced into the vacuum container 1 at extremely low pressure as indicated by arrow X.
A Kupunt holder 2 is disposed at one end of the vacuum vessel 1, and a substrate holder 3 is disposed at the other end. A hot cathode 4 and a grid 5 are provided in an open space between the target holder 2 and the sub-rate holder 3.

ターゲットホルダ２には所要の薄膜を形成するだめの金
属原子を放出するターゲット６が保持され、サブストレ
ートホルダ３には表面に金属薄膜を形成すべきサブスト
レート（基板）７が保持される。そして、ターゲット６
には交流電源８により交流電圧＼７ｎか印加され、サブ
ストレート７には直流型）原９により直流電圧■Ａが印
加され、アースに月しサブストレート７は負に帯電する
ように設定する。ここでＶＡ及び＼１１］の絶対値の関
係はＩＶ八　ｌ＜＜１Ｖｎｌ となっている。The target holder 2 holds a target 6 that emits metal atoms to form a desired thin film, and the substrate holder 3 holds a substrate 7 on which a metal thin film is to be formed. And target 6
An AC voltage \7n is applied to the substrate 7 by an AC power source 8, and a DC voltage \A is applied to the substrate 7 by a DC source 9, and the substrate 7 is set to be negatively charged by connecting it to earth. Here, the relationship between the absolute values of VA and \11] is IV8l<<1Vnl.

以」二の実施例の構成において、ターデンドロよりたた
ぎ出された原子は、熱陰極４及びグリッド５でイオン化
され、マイナスに帯電したサブストレート７の方向に加
速されてサブストレート７に当りこれにイ」着する。こ
の結果、サブストレート′７にバイアススパッタのよう
な働きを持たせることがで外、従来のスパッタ法の如く
放出された原子が無指向性であることに起因する効率の
低下を除去で外る。また原子はイオン化され電位の勾配
により加速されてサブストレート７に１７１着するため
、充分な付着強度を有する薄膜がサブス）・レート七に
イ（１られる。In the configuration of the second embodiment, the atoms ejected from the tardendro are ionized by the hot cathode 4 and the grid 5, accelerated in the direction of the negatively charged substrate 7, and hit the substrate 7. I'm wearing it. As a result, the substrate '7 can have a function similar to bias sputtering, and in addition, the decrease in efficiency caused by the non-directionality of emitted atoms as in conventional sputtering methods can be eliminated. . In addition, since the atoms are ionized and accelerated by the potential gradient and adhere to the substrate 7, a thin film having sufficient adhesion strength can be formed at a substrate rate of 7.

以上説明したように、本発明によれば、通常のスパッタ
法にクラスタイオンビーム法の原理を組合せることによ
り、ターゲットより放出された原子をイオン化しかつ指
向性を持たせてサブストレート方向に加速することがで
た高い効率でなおかつＩ＝１着強度の高い薄膜の形成が
可能なスパッタ装置を得ることがでとる。As explained above, according to the present invention, atoms emitted from a target are ionized and directionally accelerated in the direction of the substrate by combining the principle of the cluster ion beam method with the normal sputtering method. It is possible to obtain a sputtering apparatus that can form a thin film with high efficiency and high I=1 deposition strength.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明に係るスパッタ装置の実施例を示す断面図で
ある。 １・・・真空容器、２・・・ターゲットホルダ、３・・
・サブストレートホルダ、４・・・熱陰極、５・・・グ
リッド、６・・・タープ７＋・、７・・・サブストレー
ト。The figure is a sectional view showing an embodiment of a sputtering apparatus according to the present invention. 1... Vacuum container, 2... Target holder, 3...
- Substrate holder, 4... Hot cathode, 5... Grid, 6... Tarp 7+, 7... Substrate.

Claims (1)

【特許請求の範囲】[Claims] （１）低圧気水中に原子を放出するターゲラ）・とマイ
ナスに帯電したサブストレート とともに、前記ターデッドとす・ブストレートとの開の
空間に熱陰極及びグリッドを設け、前記ターゲットより
放出された原子をイオン化し、マイナスに帯電した前記
サブストレートに加速して（＝１着させたことを特徴と
するスパッタ装置。(1) A hot cathode and a grid are provided in the open space between the target and the target, along with a negatively charged substrate, and the atoms released from the target are A sputtering apparatus characterized in that the ions are ionized and accelerated to deposit (=1) on the negatively charged substrate.
JP20461982A 1982-11-24 1982-11-24 Sputtering device Pending JPS5996265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20461982A JPS5996265A (en) 1982-11-24 1982-11-24 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20461982A JPS5996265A (en) 1982-11-24 1982-11-24 Sputtering device

Publications (1)

Publication Number Publication Date
JPS5996265A true JPS5996265A (en) 1984-06-02

Family

ID=16493472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20461982A Pending JPS5996265A (en) 1982-11-24 1982-11-24 Sputtering device

Country Status (1)

Country Link
JP (1) JPS5996265A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5110435A (en) * 1988-03-23 1992-05-05 Helmut Haberland Apparatus and process for producing a thin layer on a substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5278777A (en) * 1975-12-26 1977-07-02 Hitachi Ltd Ion plating apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5278777A (en) * 1975-12-26 1977-07-02 Hitachi Ltd Ion plating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5110435A (en) * 1988-03-23 1992-05-05 Helmut Haberland Apparatus and process for producing a thin layer on a substrate

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