JPS5994910A - Frequency fine adjusting method - Google Patents
Frequency fine adjusting methodInfo
- Publication number
- JPS5994910A JPS5994910A JP20428382A JP20428382A JPS5994910A JP S5994910 A JPS5994910 A JP S5994910A JP 20428382 A JP20428382 A JP 20428382A JP 20428382 A JP20428382 A JP 20428382A JP S5994910 A JPS5994910 A JP S5994910A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- saw
- mass
- metal
- interdigital transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は圧電基板表面にインタディジタル・トランスジ
ューサ電極を付着して前記基板表面に励起する弾性表面
波（ＳＡＷ）或は表面直下のバルク内を伝播する波（８
ＳＢＷ）等を利用する共振デバイスの周波数微細調整方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides surface acoustic waves (SAWs) that are excited on the surface of the substrate by attaching interdigital transducer electrodes to the surface of the piezoelectric substrate, or waves that propagate in the bulk just below the surface (8
This invention relates to a method for finely adjusting the frequency of a resonant device using SBW) or the like.
従来、圧電基板表面にインタディジタル・トランスジュ
ーサ電極を付着し前記基板表面又は或は８８ＢＷデバイ
スの共振周波数の微細調整方法としてはウェット・エツ
チングと称しエツチング液中で付着電極を溶出したりイ
オン或はプラズマ・エツチングと称してガス中でイオン
化したガス微粒子又はプラズマを高速で電極に衝突させ
電極を削り取る等してデバイス表面に付着した電極質量
全減少せしめたり、陽極酸化法と称して付着電極を酸化
せしめ結合した酸素の質量弁だけ電極質量を増大させて
共振周波数を微細に調整することが行なわれている。Conventionally, a method for finely adjusting the resonance frequency of the substrate surface or the 88BW device by attaching interdigital transducer electrodes to the surface of a piezoelectric substrate is called wet etching, in which the attached electrodes are eluted in an etching solution or ions or plasma are etched.・This method is called etching, in which ionized gas particles or plasma are collided with the electrode at high speed to scrape off the electrode, thereby reducing the total mass of the electrode attached to the device surface, and the method is called anodic oxidation, in which the attached electrode is oxidized. The resonance frequency is finely adjusted by increasing the electrode mass by the mass valve of the coupled oxygen.
しかしながらこれらはいずれも所定の装置を必要とする
上、ウェット−エツチング、プラズイ・エツチング等は
共振周波数をモニタしながら調整作業を行うことが不可
能である為、能率が悪く実用的ではないという欠点があ
り九。However, all of these methods require specific equipment, and wet etching, plasma etching, etc. have the disadvantage that they are inefficient and impractical because it is impossible to perform adjustment work while monitoring the resonant frequency. There are nine.
本発明は上述の如きＳＡＷデバイス等に対する周波数詞
撃方法の欠点金除去する為になされたものであって、Ｓ
ＡＷデバイス等の圧電基板表面、電極付着全面或は所要
の部分に金属、非金属或はこれらの化合物を当該デバイ
スの共振周波数をモニタしながら或は統計的に蒸着条件
を確定した上でバッチ処理で蒸着することによって七〇
共娠周波数を調整する周波数微細調整方法を提供せんと
するものである。The present invention has been made in order to eliminate the disadvantages of the frequency bombardment method for SAW devices etc. as described above.
Batch processing of metals, nonmetals, or their compounds on the surface of piezoelectric substrates such as AW devices, the entire surface of electrodes attached, or required parts while monitoring the resonance frequency of the device or after statistically determining the deposition conditions. It is an object of the present invention to provide a frequency fine adjustment method for adjusting the 70-coupled frequency by vapor deposition.
以下本発明を実施例に基づいて詳細に説明する。The present invention will be described in detail below based on examples.
第１図及び第２図は夫々ＳＡＷを利用した共振器及びフ
ィルタの構造を示す図である。FIG. 1 and FIG. 2 are diagrams showing the structures of a resonator and a filter using SAW, respectively.
ＳＡＷ共撮共成器フィルタは周知の如く水晶、リチウム
ナイアベイト或はリチウムタンタレイトの如き圧電基板
１上に所要のインタディジタル・トランスジューサ電極
２，２Ｉ・・・・・・を、更に必要ならば前記電極によ
って励起したＳＡＷを反射して共振器のＱｔ−高める反
射器３，３．・・・・・・等を付着したもので、その製
造法は先ず前記圧電基板の表面に均一の厚さにアルミニ
ウム等を全面蒸着し然る後にフォトエツチングによって
所望の電極パターンを形成するものである。As is well known, the SAW co-photographing co-component filter has the necessary interdigital transducer electrodes 2, 2I, etc. on a piezoelectric substrate 1 such as quartz crystal, lithium niabate or lithium tantalate, if necessary. Reflectors 3, 3. which reflect the SAW excited by the electrodes to increase the Qt of the resonator. The manufacturing method is to first evaporate aluminum or the like to a uniform thickness on the surface of the piezoelectric substrate, and then form a desired electrode pattern by photo-etching. be.
このような構造を有する８ＡＷデバイス等の共振周波数
を微細に調整する為例えばウェット・エツチングによっ
て電極を溶解せしめその質量を減少させるといった従来
の手法では周波数のモニタリング下にこれを行うことが
不可能である等の欠点があったこと前述のとうりでおる
。In order to finely tune the resonant frequency of an 8AW device with such a structure, it is impossible to do this while monitoring the frequency using conventional methods, such as dissolving the electrode by wet etching and reducing its mass. As mentioned above, there were some drawbacks.
そこで本発明に於いては共振器又はフィルタに対し直接
その全面或は所定部分に金属又は非金属或はこれらの化
合物を蒸着して周波数の微細な調整を行なうものである
。Therefore, in the present invention, a metal, a nonmetal, or a compound thereof is deposited directly on the entire surface or a predetermined portion of the resonator or filter to perform fine frequency adjustment.
第３図及び第４図は夫々ＳＡＷ共振器及びフィルタに本
発明に係る周波数微細調整方法を適用する場合の説明図
である。FIGS. 3 and 4 are explanatory diagrams when the frequency fine adjustment method according to the present invention is applied to a SAW resonator and a filter, respectively.
即ち、第３図及び第４図は夫々前記反射器３．３を備え
たＳＡＷ共振器及び入出力電極を備えたＳＡＷフィルタ
に金属を付加蒸着し周波数の微細な調整を行なうべくこ
れらの表面波が閉じ込められる部分、あるいは表面波が
伝搬する部分に相当する面のみを開放したマスク４を用
いて、上記部分にのみ質量を付加すれば良い。That is, FIGS. 3 and 4 show the SAW resonator equipped with the reflector 3.3 and the SAW filter equipped with the input/output electrodes, respectively, in which metal is additionally deposited and these surface waves are evaporated in order to finely adjust the frequency. It is sufficient to use a mask 4 that opens only the surface corresponding to the portion where the surface wave is confined or the portion where the surface wave propagates, and add mass only to the above-mentioned portion.
このとき必ずしも、マスクを用いる必要はないが、封止
環の後工程を考慮するとマスクを使用した方が良い。Although it is not necessarily necessary to use a mask at this time, it is better to use a mask in consideration of the subsequent process of the sealing ring.
斯くして周波数の微細調整を行うデバイスが共振器であ
ればこれを発振器に、フィルタであればその伝送特性計
測装置に接続した上で真空蒸着槽に収容し、共振周波数
或は伝送特性をモニタしつつ金嘱ヲ付加蒸着し、共振周
波数或は伝送特性が所望の値となったところで蒸着を停
止すればよい。If the device that performs fine frequency adjustment is a resonator, it is connected to an oscillator, and if it is a filter, it is connected to a transmission characteristic measuring device and placed in a vacuum deposition tank, and the resonant frequency or transmission characteristics are monitored. At the same time, the metal layer may be additionally deposited, and the deposition may be stopped when the resonance frequency or transmission characteristic reaches a desired value.
蒸着すべき金属材料としてはＡｇ、Ａｕ、Ｃｒ。Metal materials to be deposited include Ag, Au, and Cr.
Ｎｉ・・・・・・等呑斡加熱蒸着可能なものであれば種
類は問わない。Any type of material can be used as long as it can be heated and vapor-deposited, such as Ni.
伺、導電性の高い金属を付加蒸着する場合であっても付
着量が極めてわずかで足りる場合には付加蒸着金属は孤
立した島状に付着するため、インタディジタル拳トラン
スジューサ電極同志ミニウムを用いるのは危険が多ので
避けた方がよい。溶融アルミニウムは表面張力が極めて
小５−
さくインタディジタル・トランスジューサ電極間に広が
る如く付着するからである。However, even when a highly conductive metal is additionally deposited, if only a very small amount is required, the additionally deposited metal will adhere in the form of isolated islands. It is highly dangerous so it is best to avoid it. This is because the molten aluminum has extremely low surface tension and is spread across the interdigital transducer electrodes.
従って、蒸着物質としてアルミニウム或はこれと同様基
板との「濡れ」が良い物質を用いる必要がある場合には
前記インタディジタル串トランスジューサ電極部２，２
への蒸着を避は例えば反射器３，３又は波動の伝搬部の
みに蒸着するようにすればよい。Therefore, when it is necessary to use aluminum or a similar material that has good "wetting" with the substrate as the vapor deposition material, the interdigital skewer transducer electrode parts 2, 2
For example, to avoid vapor deposition on the reflectors 3, 3 or the wave propagation portion, the vapor deposition may be performed only on the reflectors 3, 3 or the wave propagation portion.
以上、最も一般的な金属材料の付加蒸着について説明し
たが本発明はこれに限定する必要はなく、例えばフッ化
マグネシウム、溶融石英等の化合物或は非金属を付加蒸
着してもよい。これらはいずれも電気伝導度が極めて小
さくしかも安定した物質であるから電極間に付着せしめ
ても全く問題を生じない。Although the most common additive vapor deposition of a metal material has been described above, the present invention is not limited thereto, and compounds such as magnesium fluoride, fused silica, or non-metals may be additionally vapor deposited. Since all of these materials have extremely low electrical conductivity and are stable, no problem will occur even if they are deposited between the electrodes.
同、以上述べた如き物質の微量付加蒸着によってもデバ
イスの主要な定数、例えばＱ１等価インダクタンスは殆
んど影響をうけないことが確認された。It has also been confirmed that the main constants of the device, such as the Q1 equivalent inductance, are hardly affected by the additional deposition of a small amount of the substance as described above.
本発明に係る周波数微細調整方法は上述の如６−
く行なうので通常の蒸着設備以外の格別な装置を必要と
せずしかも周波数又は伝送特性をモニタしながら調整作
業をなしうるので安価かつ高能率にしかもデバイスの特
性を実質的に変えることな（８ＡＷデバイス等の周波数
微細調整金行う上で著しい効果を発揮する。Since the frequency fine adjustment method according to the present invention is carried out as described above, it does not require any special equipment other than ordinary vapor deposition equipment, and the adjustment work can be done while monitoring the frequency or transmission characteristics, making it inexpensive and highly efficient. Moreover, it exhibits a remarkable effect in finely adjusting the frequency of 8AW devices and the like without substantially changing the characteristics of the device.
更に、本発明に係る周波数微細調整方法は必ずしも周波
数をモニタしながら行うべきことを絶対的要件とするも
のではない。Furthermore, the frequency fine adjustment method according to the present invention does not necessarily have to be performed while monitoring the frequency.
今日、８ＡＷデバイス等は一般に大面積圧電基板上に多
数のフォト−エツチング用マスクを整列せしめてバッチ
処理で一挙に大量のデバイスを製造する。従って周波数
微細調整もパッチ処理で行うことが可能であって、この
為には付加蒸着条件と周波数調整量との関係を統計的に
把握しておけばよいことはいうまでもあるまい。Nowadays, 8AW devices and the like are generally manufactured in large quantities by batch processing by arranging a large number of photo-etching masks on a large-area piezoelectric substrate. Therefore, it is possible to perform fine frequency adjustment by patch processing, and it goes without saying that for this purpose, it is sufficient to statistically understand the relationship between the additional deposition conditions and the frequency adjustment amount.
伺、本発明は８ＡＷデバイスに限らずインタディジタル
・トランスジューサ電極にて励起しつる全ての波動、例
えば前述の８ＳＢＷ（ＳｕｒｆａｃｅＳｋｉｒｙｍｉｎ
ｃＺＢｕｌｋ Ｗａｖｅ ）の他うブ波、ＳＨ波。However, the present invention is applicable not only to 8AW devices but also to all waves excited at interdigital transducer electrodes, such as the aforementioned 8SBW (Surface Skirymin).
cZBulk Wave) Other Bulk waves and SH waves.
ブルースタインーグーリエー清水波等を利用するデバイ
スにも同様に適用可能である。The present invention is also applicable to devices using Brewster-Goulier Shimizu waves and the like.
第１図及び第２図は夫々本発明に係る周波数微細調整方
法を適用するＳＡＷ共振器及び８ＡＷフイルタの構造を
示す図、第３図及び第４図は夫々ＳＡＷ共振器及びＳＡ
Ｗフィルタに金属を付加蒸着する際の手法を説明する図
である。
特許出願人 東洋通信機株式会社1 and 2 are diagrams showing the structures of a SAW resonator and an 8AW filter, respectively, to which the frequency fine adjustment method according to the present invention is applied, and FIGS. 3 and 4 are diagrams showing the structures of a SAW resonator and an 8AW filter, respectively.
It is a figure explaining the method when additionally vapor-depositing metal on a W filter. Patent applicant: Toyo Tsushinki Co., Ltd.
Claims (1)
を付着して前記基板表面上或はバルク内に所望の周波数
の音響的波動音生ぜしめるデバイスに於いて、該デバイ
ス基板表面の全面又は所定の殻部分に金属又は非金属或
はこれらの化合物を付加蒸着して前記デバイスの共振周
波数を所望の値に調整することを特徴とする周波数微細
調整方法。In a device in which interdigital transducer electrodes are deposited on a piezoelectric substrate to produce an acoustic wave sound of a desired frequency on the surface of the substrate or in the bulk, metal is applied to the entire surface of the device substrate or to a predetermined shell portion. Or, a frequency fine adjustment method characterized by adjusting the resonance frequency of the device to a desired value by additionally depositing a non-metal or a compound thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20428382A JPS5994910A (en) | 1982-11-19 | 1982-11-19 | Frequency fine adjusting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20428382A JPS5994910A (en) | 1982-11-19 | 1982-11-19 | Frequency fine adjusting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5994910A true JPS5994910A (en) | 1984-05-31 |
| JPH0247886B2 JPH0247886B2 (en) | 1990-10-23 |
Family
ID=16487912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20428382A Granted JPS5994910A (en) | 1982-11-19 | 1982-11-19 | Frequency fine adjusting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994910A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS611922U (en) * | 1984-06-08 | 1986-01-08 | 関西日本電気株式会社 | surface acoustic wave device |
| JPS63246911A (en) * | 1986-12-22 | 1988-10-13 | レイセオン・カンパニー | Elastic surface wave device and surface wave speed characteristics control method |
| JPH02268505A (en) * | 1989-04-11 | 1990-11-02 | Matsushita Electric Ind Co Ltd | Frequency adjusting method for surface acoustic wave device |
| US5716042A (en) * | 1996-04-15 | 1998-02-10 | Derviller; Peter Reginald John | Springing means for suspension systems |
| JP2009130806A (en) * | 2007-11-27 | 2009-06-11 | Seiko Epson Corp | Surface acoustic wave element and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55110418A (en) * | 1979-02-20 | 1980-08-25 | Victor Co Of Japan Ltd | Surface acoustic wave device |
-
1982
- 1982-11-19 JP JP20428382A patent/JPS5994910A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55110418A (en) * | 1979-02-20 | 1980-08-25 | Victor Co Of Japan Ltd | Surface acoustic wave device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS611922U (en) * | 1984-06-08 | 1986-01-08 | 関西日本電気株式会社 | surface acoustic wave device |
| JPS63246911A (en) * | 1986-12-22 | 1988-10-13 | レイセオン・カンパニー | Elastic surface wave device and surface wave speed characteristics control method |
| JPH0554726B2 (en) * | 1986-12-22 | 1993-08-13 | Raytheon Co | |
| JPH02268505A (en) * | 1989-04-11 | 1990-11-02 | Matsushita Electric Ind Co Ltd | Frequency adjusting method for surface acoustic wave device |
| US5716042A (en) * | 1996-04-15 | 1998-02-10 | Derviller; Peter Reginald John | Springing means for suspension systems |
| JP2009130806A (en) * | 2007-11-27 | 2009-06-11 | Seiko Epson Corp | Surface acoustic wave element and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0247886B2 (en) | 1990-10-23 |
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