JPS5986306A - Band-pass filter - Google Patents
Band-pass filterInfo
- Publication number
- JPS5986306A JPS5986306A JP19638482A JP19638482A JPS5986306A JP S5986306 A JPS5986306 A JP S5986306A JP 19638482 A JP19638482 A JP 19638482A JP 19638482 A JP19638482 A JP 19638482A JP S5986306 A JPS5986306 A JP S5986306A
- Authority
- JP
- Japan
- Prior art keywords
- line
- sub
- spurious
- band
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、ストリップ線路により構成されたバンドパス
フィルタに関スる。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a bandpass filter constructed of strip lines.
ストリッジ線路形パントノやスフィルタ（以下Ｂ、Ｐ、
Ｆ、という）は平面回路のため比較的設計性が良く機械
的構造も簡単なことからマイクロ波のフィルタとしてし
ばしば用いられている。特に、マイクロストリップ線路
形Ｂ、Ｐ、Ｆ、は他の回路素子と容易に一体化でき、マ
イク四波回路モジュール中の簡便なフィルタに適してい
る。一般に、Ｂ、Ｐ、Ｆ、は複数個の共振器とインビー
ダンメ変成器とから構成されている。ス） ＩＪッｆ線
路形Ｂ、Ｐ、Ｆ、においてはこれらの回路要素としてλ
／４あるいはλ／２（λは通過帯域中心周波数ｆ。Stridge line type pantone filter (hereinafter referred to as B, P,
Since it is a planar circuit, it is relatively easy to design and has a simple mechanical structure, so it is often used as a microwave filter. In particular, microstrip line types B, P, and F can be easily integrated with other circuit elements and are suitable for simple filters in microphone four-wave circuit modules. In general, B, P, and F are composed of a plurality of resonators and an Inbee Damme transformer. ) In IJf line types B, P, and F, λ is used as these circuit elements.
/4 or λ/2 (λ is the passband center frequency f.
での線路波長）を単位とする線路群が用いられる。スト
リップ線路形Ｂ、Ｐ、Ｆ、には数多くの種類があるが、
第１図に直列接続λ／２２段Ｂ、Ｐ、Ｆ、の例を示す。A group of lines is used, with the unit being the line wavelength (at There are many types of strip line B, P, and F.
FIG. 1 shows an example of λ/22 stages B, P, and F connected in series.
即ち、入力ｐｔが加えられる入力線路１ノと出力Ｐｏが
抽出される出力線路１３との間にλ／２線路１２．１２
が２段直列に設けられる。That is, a λ/2 line 12.12 is connected between the input line 1 to which the input pt is applied and the output line 13 from which the output Po is extracted.
are provided in two stages in series.
ストリップ線路形Ｂ、Ｐ、Ｆ、はスプリアス通過帯域を
持っている。第２図（ａ）、（ｂ）は第１図のフィルタ
のスズリアスモードを説明するもので、第２図（＝）に
示すよりなλ／２線路２１はＪ’ａの基本波の共振モー
ドの外に、第２図（ｂ）に示すような基本前の高調波に
対応するＮｆｏ（Ｎ＝２．３．・・・）の周波数のスプ
リアス共振モードを持ち、このＮＪ’ｏの周波数はほと
んど減衰なく透過する。この様なスプリアス通過帯域の
存在は高周波回路を構成する際に著しい障害となる場合
が多い。Stripline types B, P, and F have spurious passbands. Figures 2 (a) and (b) explain the tin ria mode of the filter in Figure 1, and the λ/2 line 21 shown in Figure 2 (=) resonates with the fundamental wave of J'a. In addition to this mode, there is a spurious resonance mode with a frequency of Nfo (N = 2.3...) corresponding to the harmonic before the fundamental as shown in Figure 2 (b), and this frequency of NJ'o. is transmitted with almost no attenuation. The presence of such spurious passbands often becomes a significant hindrance when constructing high frequency circuits.
例えば受信機においてはスプリアス受信感度の問題、送
信機においては発振器、逓倍器、電力増幅器等の非線形
デバイスで発生する高周波の不要放射の問題等がそれで
ある。又、従来、ストリップ線路形Ｂ、Ｐ、Ｆ、は高調
波に対する入出カリアクタンスの周波数特性が急峻なた
めに、前記非線形デバイスと接続した際に、高調波反射
波の位相によって、デバイスの不安定動作をひきおこす
事があった。For example, in a receiver, there is a problem of spurious reception sensitivity, and in a transmitter, there is a problem of unnecessary high-frequency radiation generated by nonlinear devices such as oscillators, multipliers, and power amplifiers. In addition, conventional strip line types B, P, and F have steep frequency characteristics of input and output caliactance with respect to harmonics, so when connected to the nonlinear device, the phase of the harmonic reflected wave causes device instability. There was something that caused some movement.
本発明は上記の欠点を除去するもので、スゲリアス帯域
での伝送を抑圧しうるストリップ線路形Ｂ、Ｐ、Ｆ、
’ｉ提供することを目的とする。The present invention eliminates the above-mentioned drawbacks, and has the purpose of eliminating the above-mentioned drawbacks.
'I aim to provide.
本発明は、ストリップ線路を用いたバンドパスフィルタ
において、バンドパスフィルタを構成する主共催線路の
近傍に、バンド・臂スフィルタのスゲリアス帯域周波数
で前記主共振線路と電磁的に共振結合する低Ｑの副線路
を設けたスプリアス帯域抑圧形のパントノｆスフィルタ
である。The present invention provides a bandpass filter using a stripline, in which a low Q This is a spurious band suppression type pantonous f filter provided with a sub-line.
以下、本発明の実施例を図面を参照して説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第３図は本発明の一実施例であり、入力ｉ９１が加えら
れる入力線路３１と出力ＰＯが抽出される出力線路３３
との間には例えばλ／２ストリップ線路より形成される
主共振線路３２が直列接続２段Ｂ、Ｐ、Ｆ、 ’ｉ構成
して設けられる。この主共催線路３２の近傍には例えば
１／２・λ々ストリップ線路よシ形成される副線路３４
が複数個設けられる。この副線路３４はＢ、Ｐ、Ｆ、の
あるスゲリアス帯域の周波数で前記主共振線路３２と電
磁的に共振結合する線路長をもつ低Ｑ（損失の多い）の
線路、！ある。第３図では副線路３４の線路長が１／２
・λ／２＝λ／４の場合であるので２Ｎｆｏ（Ｎ−１，
２，３・・・）の周波数で共振する。低Ｑの副線路３４
は例えば比較的電気抵抗の大きいＮｉＣｒ＋ＴａＮ２薄
膜線路で実現される。副線路３４は２Ｎｆ。FIG. 3 shows an embodiment of the present invention, in which an input line 31 to which input i91 is applied and an output line 33 to which output PO is extracted.
A main resonant line 32 formed of, for example, a λ/2 strip line is provided between the main resonant lines 32 in two series-connected stages B, P, F, 'i. In the vicinity of this main co-operating line 32, there is a sub-line 34 formed, for example, as a 1/2/λ strip line.
A plurality of are provided. This sub-line 34 is a low-Q (high-loss) line with a line length that electromagnetically resonantly couples with the main resonant line 32 at a certain Sgelius band frequency of B, P, and F. be. In Figure 3, the line length of the sub-line 34 is 1/2.
・Since λ/2=λ/4, 2Nfo(N-1,
It resonates at the frequency of 2, 3...). Low Q sub-line 34
is realized, for example, with a NiCr+TaN2 thin film line having relatively high electrical resistance. The sub line 34 is 2Nf.
の共振周波数で主共振線路３２と電磁気的に結合する様
に配置されている。従って、副線路３４のＱ値を適切に
選び、さらに、主共振線路３２と副線路３４との結合度
を、主共振線路３２と出力線路３３との結合度よシも十
分大きく選ぶことによって、２Ｎｆｏでの共催エネルギ
の大部分を副線路３４に吸収させることができる。すな
わち、２Ｎｆｏのスプリアス帯域における挿入損金増大
させ、スゲリアス帯域での伝送量を、第４図の破線のフ
ィルタ特性の如く抑圧することができる。第４図はフィ
ルタ周波数特性で、実線は従来例によるＢ、Ｐ、Ｆ、で
あシ、破線は本発明によるスジリアス抑圧形Ｂ、Ｐ、Ｆ
、である。なお、副線路３４の存在はフィルタ本来の帯
域通過特性にほとんど影響を与えない。帯域内中心周波
数ｆｏにおいて、副線路３４は共振モードがなく、λ／
２の主共振線路３２から見て極めて高いインピーダンス
にあるからである。The main resonant line 32 is arranged so as to be electromagnetically coupled to the main resonant line 32 at a resonant frequency of . Therefore, by appropriately selecting the Q value of the sub line 34 and further selecting the degree of coupling between the main resonant line 32 and the sub line 34 to be sufficiently larger than the degree of coupling between the main resonant line 32 and the output line 33, Most of the co-produced energy in 2Nfo can be absorbed by the sub-line 34. That is, the insertion loss in the spurious band of 2Nfo can be increased, and the amount of transmission in the spurious band can be suppressed as shown in the filter characteristic shown by the broken line in FIG. FIG. 4 shows the filter frequency characteristics, where the solid line shows B, P, F, according to the conventional example, and the broken line shows the stripe suppression type B, P, F according to the present invention.
, is. Note that the existence of the sub line 34 has almost no effect on the original bandpass characteristics of the filter. At the in-band center frequency fo, the sub line 34 has no resonant mode and λ/
This is because the impedance is extremely high when viewed from the main resonant line 32 of No. 2.
以上述べた本発明の副線路の原理は要するに周波数選択
性の損失回路である。従って、基本動作周波数に殆んど
無関係に、所要のスプリアス帯域減衰量に必要な複数個
の副線路を使用することができる。第３図は副線路３４
を４個用いた場合であって、複数個使用することは設計
の自由度を増す事にもつながる。第３図では２Ｎｆ０に
共振する１／２・λ／２の副線路３４のみを用いたが、
第５図に示すように、例えば１／２・λ／２線路３５と
１／３・λ／２線路３６より構成される長さの異なる複
数個の副線路を用いることもできる。The principle of the sub-line of the present invention described above is essentially a frequency-selective loss circuit. Therefore, the number of sub-lines required for the required amount of spurious band attenuation can be used almost independently of the fundamental operating frequency. Figure 3 shows the sub-track 34.
This is a case where four pieces are used, and using a plurality of pieces also increases the degree of freedom in design. In Fig. 3, only the 1/2/λ/2 sub-line 34 resonating with 2Nf0 was used, but
As shown in FIG. 5, it is also possible to use a plurality of sub-lines of different lengths, including, for example, a 1/2·λ/2 line 35 and a 1/3·λ/2 line 36.
第５図の場合は２Ｎｆ、および３Ｎｆｏのスゲリアス帯
域が抑圧される。In the case of FIG. 5, the 2Nf and 3Nfo spurious bands are suppressed.
第６図は本発明の他の実施例を示すものであシ、第１段
目の主共振線路３２に対してはＩＡ・λ／２線路よりな
る３個の副線路３７を多段接続することにより、減衰帯
域の帯域幅を拡げている。又、第２段目の主共振線路３
２に対しては１／２・λ／２線路の副線路３８との結合
方法の一変形例を示すものである。FIG. 6 shows another embodiment of the present invention, in which three sub-lines 37 made of IA/λ/2 lines are connected in multiple stages to the main resonant line 32 of the first stage. This expands the attenuation band width. In addition, the main resonant line 3 of the second stage
2 shows a modification of the method of coupling the 1/2/λ/2 line with the sub-line 38.
本発明の利点は、発明を実施する上で特に平面回路製作
上の工程を複雑にしないことである。An advantage of the present invention is that it does not complicate the steps involved in implementing the invention, particularly in the fabrication of planar circuits.
本発明は通常の薄膜プロセスの範ちゅう内で容実施例
又、本発明によるスゲリアス帯域の抑圧はエネルギ吸収
によるものであるから、スゲリアス帯域でもほぼ整合状
態にあシ、本発明によるＢ、Ｐ、Ｆ、 ’ｉｉ、発振器
、逓倍器、電力増幅器等の様な高調波の負荷インピーダ
ンスが問題となる非線形デバイスと接続しても、常に安
定なデバイス動作が可能である。The present invention can be applied within the scope of a normal thin film process.Furthermore, since the suppression of the sgelious band according to the present invention is due to energy absorption, even the sgelious band can be almost matched. Even when connected to nonlinear devices such as oscillators, multipliers, power amplifiers, etc., where harmonic load impedance is a problem, stable device operation is always possible.
以上述べたように本発明によれば、スゲリアス帯域を抑
圧したストリング線路形Ｂ、Ｐ、Ｆ、 ’ｅ実現でき高
周波系の構成が簡便になるばかシでなく、発振器、逓倍
器、電力増幅器等の非線形性の強いデバイスに接続して
も、高周波反射波による動作不安定を起こしえないＢ、
Ｐ、Ｆ、 を提供できる。As described above, according to the present invention, it is possible to realize string line types B, P, F, 'e that suppress the spurious band, and to simplify the configuration of the high frequency system, as well as oscillators, multipliers, power amplifiers, etc. B. Does not cause operational instability due to high-frequency reflected waves even when connected to devices with strong nonlinearity.B.
P, F, can be provided.
第１図は従来のＢ、Ｐ、Ｆ、 ’ｅ示す構成図、第２図
（ａ） 、（ｂ）はフィルタの基本波モードとスプリア
スモード金示す説明図、第３図は本発明のＢ、Ｐ、Ｆ。
の一実施例を示す構成図、第４図は本発明に係るフィル
タ周波数特性の一例を従来と比較して示す曲線図、第５
図及び第６図は本発明の他の実施例を示す構成図である
。
３ノ・・・入力線路、３２・・・主共振線路、３３・・
・出力線路。Fig. 1 is a configuration diagram showing the conventional B, P, F, 'e, Fig. 2 (a) and (b) are explanatory diagrams showing the fundamental wave mode and spurious mode of the filter, and Fig. 3 is an explanatory diagram showing the B, P, F, 'e of the present invention. , P.F. FIG. 4 is a configuration diagram showing an example of the present invention; FIG. 4 is a curve diagram showing an example of filter frequency characteristics according to the present invention in comparison with a conventional filter;
6 and 6 are configuration diagrams showing other embodiments of the present invention. 3... Input line, 32... Main resonant line, 33...
・Output line.
Claims (1)
る主共振線路と、この主共振線路の近傍に設けられバン
ドパスフィルタのスジリアス帯域周波数で前記主共振線
路と電磁的に共振結合されるストリップ線路よりなる低
Ｑの副線路とを具備することを特徴とするバンドパスフ
ィルタ。A main resonant line made of a strip line constituting a pantonous filter, and a low resonant line made of a strip line provided near this main resonant line and electromagnetically coupled to the main resonant line at the bandpass filter's strip band frequency. A bandpass filter characterized by comprising a Q sub-line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19638482A JPS5986306A (en) | 1982-11-09 | 1982-11-09 | Band-pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19638482A JPS5986306A (en) | 1982-11-09 | 1982-11-09 | Band-pass filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5986306A true JPS5986306A (en) | 1984-05-18 |
Family
ID=16356972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19638482A Pending JPS5986306A (en) | 1982-11-09 | 1982-11-09 | Band-pass filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5986306A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4731596A (en) * | 1985-02-27 | 1988-03-15 | Alcatel Thomson Faisceaux Hertziens | Band-pass filter for hyperfrequencies |
| EP0803979A2 (en) * | 1996-04-26 | 1997-10-29 | Lk-Products Oy | Integrated filter construction |
-
1982
- 1982-11-09 JP JP19638482A patent/JPS5986306A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4731596A (en) * | 1985-02-27 | 1988-03-15 | Alcatel Thomson Faisceaux Hertziens | Band-pass filter for hyperfrequencies |
| EP0803979A2 (en) * | 1996-04-26 | 1997-10-29 | Lk-Products Oy | Integrated filter construction |
| EP0803979A3 (en) * | 1996-04-26 | 1999-03-03 | Lk-Products Oy | Integrated filter construction |
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