JPS5984423A - Energy radiation equipment - Google Patents
Energy radiation equipmentInfo
- Publication number
- JPS5984423A JPS5984423A JP19411582A JP19411582A JPS5984423A JP S5984423 A JPS5984423 A JP S5984423A JP 19411582 A JP19411582 A JP 19411582A JP 19411582 A JP19411582 A JP 19411582A JP S5984423 A JPS5984423 A JP S5984423A
- Authority
- JP
- Japan
- Prior art keywords
- lens
- light
- center
- passing
- output light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title abstract 2
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 2
- 230000003685 thermal hair damage Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は表面層の改質等に用いる高エネルギビーム照射
、特に半導体基板の単結晶化処理に用いる装置に関する
。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a high-energy beam irradiation used for modifying a surface layer, and particularly to an apparatus used for single crystallization of a semiconductor substrate.
従来例の構成とその問題点
金属表面の改質例えば焼入、その他、半導体装置におい
ては、薄膜多結晶体の単結晶化などへ適用するためのレ
ーザ照射装置がある。Conventional Structures and Problems There are laser irradiation devices used for modification of metal surfaces, such as hardening, and for semiconductor devices, such as single crystallization of thin film polycrystals.
このようなレーザ照射装置では、レーザ光を光学系に導
き、出力光を絞って試料表面に照射するが、そのエネル
ギ 分布１は一般に第１図（ＩＬ）に示すようにガウス
分布をしている。このような出力光で、試料を照射する
と、当然、そのピーク位置２０部分のみが深くしかも高
温に加熱され、その周囲３の部分は余り加熱されない。In such a laser irradiation device, the laser beam is guided through an optical system, and the output light is focused and irradiated onto the sample surface, but the energy distribution 1 generally has a Gaussian distribution as shown in Figure 1 (IL). . When a sample is irradiated with such output light, naturally only the peak position 20 is heated deeply and to a high temperature, and the surrounding area 3 is not heated much.
従って、第１図の形状のビームではビームの高温部分の
１１」が狭くなシ、ある面を均等に熱処理しようとする
と、非常に重なりを大きくし、かなシの数の走査を行わ
なければならない。例えば、半導体などのレーザアニー
ルという極端な例では、出力光の径が５０μｍ以上ある
のに、１０〜２０μｍ毎にずらして、即ち、６０〜８０
％の重なりをもって照射しなければならないという欠点
がある。しかも、ピークが大きいため、基板深くまで瞬
時に加熱され、熱歪や欠陥を誘起することが指摘されて
いるしたがって、第２図に示すいわゆる輪状ないしはド
ーナツ状の出力光エネルギ 分布４は、この点で優れて
いることが想像される。すなわち第２図では温度の比較
的高い部分（斜線部分）が広くなシ、広範囲に均一な加
熱を行うことができる、このような第２図に示すエネル
ギ 分布は、レーザ光をガウス分布をもつ多モードから
、単モードにし、ＴＥＭｏ＋やＴ Ｅ Ｍ＋ｏにすれば
得られることがわかっているが、調整が非常に難しい上
にレーザ出力が大［１〕に低下し、たとえば１／／Ｆ５
〜１／１ｏになるという欠点がある。Therefore, in a beam with the shape shown in Figure 1, the high-temperature part of the beam is narrow (11"), and in order to uniformly heat treat a certain surface, the overlap must be made extremely large and a number of scans must be performed. . For example, in an extreme example of laser annealing for semiconductors, the diameter of the output light is 50 μm or more, but the diameter is shifted by 10 to 20 μm, that is, 60 to 80 μm.
The disadvantage is that the irradiation must be done with a % overlap. Moreover, because the peak is large, it has been pointed out that the substrate is instantaneously heated deep into the substrate, inducing thermal distortion and defects. Therefore, the so-called ring-shaped or donut-shaped output light energy distribution 4 shown in Fig. 2 is caused by this point. It is imagined that it will be excellent. In other words, in Figure 2, the area where the temperature is relatively high (the shaded area) is wide, and uniform heating can be performed over a wide range.The energy distribution shown in Figure 2 causes the laser beam to have a Gaussian distribution. It is known that it can be obtained by changing from multimode to single mode and changing to TEMo+ or TE M+o, but it is very difficult to adjust and the laser output drops to a large [1], for example, 1//F5
It has the disadvantage that it becomes ~1/1o.
発明の目的
本発明は、レーザ等の照射エネルギ 出力の低下をきた
さず、即ち、多モードレーザ等においても、ＩＪ広い、
エネルギ分布の均等な出力光を実現し、基板深くに熱歪
を加えず、巾広い照射を行わしめる光エネルギ 照射装
置を提供するものである。Purpose of the Invention The present invention does not cause a decrease in the irradiation energy output of a laser etc., that is, even in a multi-mode laser etc., the IJ is wide.
The present invention provides a light energy irradiation device that realizes output light with uniform energy distribution and irradiates over a wide range without causing thermal distortion deep into the substrate.
発明の構成
本発明は、中心部に凹部ないしは凸部を設けた光学レン
ズを用い、この光学レンズを通過する光のうち、中心部
附近を通過する光を周辺を通過する光よりも相対的にレ
ンズ外側へ大きく屈折させて、いわば光学系を出る光束
の中心部のエネルギ密度を低下させて、目的物に光学レ
ンズの通過光を照射するもので、さらにカマボコ型レン
ズを通過させて光エネルギ 分布を一方向に圧縮し長円
状にするものである。Structure of the Invention The present invention uses an optical lens having a concave or convex portion in the center, and out of the light passing through this optical lens, the light passing near the center is relatively smaller than the light passing around the periphery. The light that passes through the optical lens is irradiated onto the object by greatly refracting the light to the outside of the lens, reducing the energy density at the center of the light beam exiting the optical system, and then passing through the semi-cylindrical lens to improve the light energy distribution. is compressed in one direction to make it into an ellipse.
実施例の説明
本発明は、光学系の途中に特殊な光学レンズを設けるこ
とによって達成される。すなわち、本発明に用いる光学
レンズは、たとえば第３図又は第４図に示すごとく光学
レンズ１１中の中心部に凹部１２ないし凸部１３を設け
、中心部分を通過する光１４を相対的にレンズ外側へよ
シ大きく屈折させることによって、中心部に集中してい
るエネルギー強度を周辺に分散させ、こうしたレンズ１
１を通過した光を通常の凸レンズ（群）などで焦点にあ
つめることによって、第２図に示すような輪状の出力光
エネルギ分布を有した出力光を得る。DESCRIPTION OF THE EMBODIMENTS The present invention is achieved by providing a special optical lens in the middle of the optical system. That is, the optical lens used in the present invention has a concave portion 12 or a convex portion 13 in the center of the optical lens 11, as shown in FIG. 3 or 4, so that the light 14 passing through the center is relatively By refracting a large amount outward, the energy intensity concentrated in the center is dispersed to the periphery.
By concentrating the light that has passed through the lens 1 to a focal point using a normal convex lens (group), output light having a ring-shaped output light energy distribution as shown in FIG. 2 is obtained.
この特殊な光学レンズ１４は、第３，４図に示すもの以
外に第５図に示すように両面とも円錐状になっていても
よく、又、第６図に示すように弧状に円錐のすそが引い
ていてもよい。要はレンズ中心部の光が通常の凹又は凸
レンズ等に、比べてより外側へ屈折されるようになって
おり、焦点を結ばなければ良い。又、曲面でなくとも、
五角錐などのように平面で構成されても同様の効果があ
る。In addition to what is shown in FIGS. 3 and 4, this special optical lens 14 may have a conical shape on both sides as shown in FIG. 5, or may have an arcuate conical base as shown in FIG. may be subtracted. The point is that the light at the center of the lens is refracted to the outside more than with a normal concave or convex lens, so it does not need to be focused. Also, even if it is not a curved surface,
A similar effect can be obtained even if the structure is made of a flat surface such as a pentagonal pyramid.
又、第７図に示すような特殊な凸レンズであれば（凹部
は極端に強調しである）、一枚で、その焦点附近に第２
図で示すような光エネルギ分布を有した出力光を得られ
る。Also, if it is a special convex lens like the one shown in Figure 7 (the concave part is extremely emphasized), a second lens will be placed near the focal point with one lens.
Output light having a light energy distribution as shown in the figure can be obtained.
さらに、第５，６図に例示した特殊な光学レンズ１１に
、カマボコ型のレンズ１５を第８図に示すように組み合
わせれば、その合成焦点１６の近傍には、第１図に示す
ようなガウス分布ではなく一方向に圧縮された長円状で
しかも平旦な第９図に示すような熱処理に好ましい出力
光エネルギ分布１７を実現できる。すなわち、このよう
な長円状でしかも比較的均一なエネルギ 分布を有する
レーザー光で矢印１８の方向に走査すれば効率よくエネ
ルギー照射を目的物に行うことができる。Furthermore, if the special optical lens 11 illustrated in FIGS. 5 and 6 is combined with the semi-cylindrical lens 15 as shown in FIG. It is possible to realize an output light energy distribution 17 which is not a Gaussian distribution but is compressed in one direction, has an oval shape, and is flat, as shown in FIG. 9, which is preferable for heat treatment. That is, by scanning in the direction of the arrow 18 with such an elliptical laser beam having a relatively uniform energy distribution, the target object can be efficiently irradiated with energy.
なお、第８図に示す合成焦点１６はレンズ１１を凹部１
２のないものとしたときの破線の通過光による元の焦点
１９の近傍にある方が望ましい。なお、第８図のレンズ
１５の右側の図は側面を示したものでカマボコ状である
ことを示している。Note that the composite focal point 16 shown in FIG.
It is preferable that the focal point 19 be located near the original focal point 19 of the transmitted light indicated by the broken line when there is no 2. The right side view of the lens 15 in FIG. 8 shows the side surface and shows that it has a semicylindrical shape.
本発明の効果を、条件の厳しい半導体素子に適用した結
果でもって説明する。The effects of the present invention will be explained using the results of application to a semiconductor element under severe conditions.
シリコン基板の上に非常に厚い熱酸化膜２μｍを形成し
、さらにその上にＬＰ（減圧）ＣＶＤ法によって多結晶
シリコンを０．５μｍ形成した。A very thick thermal oxide film of 2 μm was formed on a silicon substrate, and a polycrystalline silicon film of 0.5 μm was further formed thereon by LP (low pressure) CVD.
通常この多結晶シリコンを第１０図に示す従来のレーザ
ー光照射装置にてアニールして単結晶化あるいは大結晶
粒化する。第１０図において、レーザ発生装置２１のレ
ーザ光２２は、拡大器２３で１０倍に拡げられ、鏡２４
で直角に曲げ、最終レンズ（焦点距離５Ｑｍの通常の凸
レンズ）２５で絞り、試料（前記多結晶シリコンの形成
された基板）２６上にあてる。Usually, this polycrystalline silicon is annealed using a conventional laser beam irradiation device shown in FIG. 10 to form a single crystal or a large crystal grain. In FIG. 10, a laser beam 22 from a laser generator 21 is expanded ten times by a magnifier 23, and a mirror 24
The sample is bent at a right angle, apertured with a final lens (a normal convex lens with a focal length of 5 Qm) 25, and applied onto a sample (the substrate on which the polycrystalline silicon is formed) 26.
この従来の装置を用い、レーザ出力ｓＷ、走査速度１ｏ
ｏｗｔｒ、／Ｓ、基板温度３００°Ｃで、約２０μｍ巾
の多結晶シリコンが融解し、大結晶化した。Using this conventional device, the laser output sW and the scanning speed 1o
At owtr, /S and a substrate temperature of 300°C, polycrystalline silicon with a width of about 20 μm melted and became a large crystal.
全面をさらに大結晶粒化するためには、走査の重ねを大
きくし、横方向へ６μｍの小さなピッチで送らなければ
ならなかった。次にレーザ照射後の基板を割った所、通
常の臂開が生ぜず、貝から状に割れ、大きな歪があるこ
とが分った。断面を研磨し、蝕刻した所、無数の欠陥が
、レーザ光のピークに対応して、深さ５μｍにまで及ん
でいるのズ１１を第１０図の一点鎖線部分に挿入した所
、同条件でありながら融解巾は約８０μｍと増加した。In order to further increase the grain size over the entire surface, it was necessary to increase the overlap of scans and send them in the lateral direction at a small pitch of 6 μm. Next, when the substrate was cracked after laser irradiation, it was found that the normal arm opening did not occur, but instead it cracked into shell-shaped pieces and was severely distorted. When the cross section was polished and etched, there were countless defects up to a depth of 5 μm, corresponding to the peak of the laser beam. When the hole 11 was inserted into the dot-dash line in Fig. 10, under the same conditions. However, the melting width increased to about 80 μm.
従って、ピッチも４０μｍと非電に大きくとれ、従来法
に比べて走査能率が４〜８倍改善され ４だ。しかも
、基板には熱歪が見られず、前述のような欠陥は全く認
められなかった。Therefore, the pitch can be set to 40 μm, which is a large non-electromagnetic method, and the scanning efficiency is improved by 4 to 8 times compared to the conventional method. Moreover, no thermal strain was observed on the substrate, and no defects such as those described above were observed.
次に第１１図に示すように特殊レンズ１１とカマボコ型
レンズ１５を凸レンズ２５のあとに組み入れ、長円状の
強度を有する第９図の出力光を形成した。この第１１図
の構成を用いて同様の実験をした所、融解巾は約１７０
μｍとさらに広くでき、従ってピッチも約１００μｍと
非常に改善された。そして基板に対する熱影響は全く認
められなかった。さらにカマボコ型のレンズを二枚直角
に組み合わせることによって、出力光の巾や長さを自由
に調整できることも明らかとなった。Next, as shown in FIG. 11, a special lens 11 and a semi-cylindrical lens 15 were installed after the convex lens 25 to form the output light shown in FIG. 9 having an oval intensity. When a similar experiment was conducted using the configuration shown in Figure 11, the melting width was approximately 170 mm.
The pitch can be further increased to 100 μm, which is a great improvement. No thermal effect on the substrate was observed. It was also revealed that by combining two semi-cylindrical lenses at right angles, the width and length of the output light could be adjusted freely.
発明の効果
以上の説明でも明らかなように、本発明によればレーザ
出力の低下を招くことなく、又、基板に熱損傷を形成す
ることのないビーム巾の広いエネルギ照射装置を得るこ
とができる。なお、本発明はシリコンに限らず、全ての
表面処理に適用し得ることは明白である。Effects of the Invention As is clear from the above explanation, according to the present invention, it is possible to obtain an energy irradiation device with a wide beam width without causing a decrease in laser output or causing thermal damage to the substrate. . It is clear that the present invention is applicable not only to silicon but also to all surface treatments.
第１図ａ、 ｂはレーザ出力光エネルギ分布の正面分
布図、平面分布図、第２図ａ・ ｂは本発明のレンズに
より作成されるエネルギ 分布の正面分布。＋ ”ｌ’
ｍｌ ５’ｆ 、−Ｗ’ｙ Ａ町。エア□１カ、ヵ、
６特殊光学レンズを示す図、第８図はカマポコ型レンズ
を用いた時のレーザ光路及びその出力光の照射状態を示
す図、第９図ａ、 ｂはカマボコ型レンズを用いた時
のエネルギ 分布の正面分布図、平面分布図、第１０図
は従来のレーザ照射装置の概略図、第１１図は本発明を
適用したレーザ照射装置の部分概略図である。
４．１７・・・・・エネルギ 分布、１１・・・・・特
殊レンズ、１４・・・・・・中心部分の通過光、１５・
・・・・・カマボコ型レンズ、２６・・・・・試料。
代即人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図 第２図
第３図 第４図
第５図 第６図
第７図
第８図Figures 1a and 1b are frontal distribution diagrams and planar distribution diagrams of the laser output light energy distribution, and Figures 2a and 2b are frontal distribution diagrams of the energy distribution created by the lens of the present invention. ＋ ``l'
ml 5'f, -W'y A town. Air □1 ka, ka,
6. A diagram showing the special optical lens. Figure 8 is a diagram showing the laser optical path and the irradiation state of the output light when using a semi-cylindrical lens. Figures 9 a and b are energy distribution when using a semi-cylindrical lens. FIG. 10 is a schematic diagram of a conventional laser irradiation device, and FIG. 11 is a partial schematic diagram of a laser irradiation device to which the present invention is applied. 4.17...Energy distribution, 11...Special lens, 14...Light passing through the center, 15.
...Horse-shaped lens, 26...Sample. Name of representative Patent attorney Toshio Nakao and 1 other person 1st
Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8
Claims (2)
記光学レンズを通過する光のうち前記中心部附近の光を
周辺の光に対して相対的にレンズ外側へよ多大きく屈折
させて前記光学レンズの通過光を目的物に照射すること
を特徴とするエネルギ照射装置。(1) A concave or convex portion is provided in the center of the optical lens, and among the light passing through the optical lens, light near the center is refracted to the outside of the lens to a large extent relative to surrounding light. An energy irradiation device characterized by irradiating a target object with light passing through an optical lens.
記中心部附近の光を周辺の光に対して相対的にレンズ外
側へより大きく屈折させ、さらにカマボコ型レンズを通
すことにより、光エネルギ分布を一方向に圧縮し長円状
にすることを特徴とする光エネルギ照射装置。(2) By providing a concave or convex portion in the center of the optical lens, the light near the center is refracted to the outside of the lens to a greater extent relative to the surrounding light, and the light is further passed through the semi-cylindrical lens to generate light energy. A light energy irradiation device characterized by compressing the distribution in one direction into an elliptical shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19411582A JPS5984423A (en) | 1982-11-04 | 1982-11-04 | Energy radiation equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19411582A JPS5984423A (en) | 1982-11-04 | 1982-11-04 | Energy radiation equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5984423A true JPS5984423A (en) | 1984-05-16 |
Family
ID=16319167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19411582A Pending JPS5984423A (en) | 1982-11-04 | 1982-11-04 | Energy radiation equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984423A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59151421A (en) * | 1983-02-17 | 1984-08-29 | Agency Of Ind Science & Technol | Laser annealing device |
| JPS6199323A (en) * | 1984-10-19 | 1986-05-17 | Sharp Corp | Apparatus for manufacturing monocrystalline thin film |
| JPS6247115A (en) * | 1985-08-26 | 1987-02-28 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS6266617A (en) * | 1985-09-19 | 1987-03-26 | Agency Of Ind Science & Technol | Laser light emitting device |
| EP0987577A2 (en) * | 1998-09-14 | 2000-03-22 | Fujitsu Limited | Light intensity distribution converting device and optical data storage apparatus |
| JP2013162010A (en) * | 2012-02-07 | 2013-08-19 | Dainippon Screen Mfg Co Ltd | Heat treatment equipment |
-
1982
- 1982-11-04 JP JP19411582A patent/JPS5984423A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59151421A (en) * | 1983-02-17 | 1984-08-29 | Agency Of Ind Science & Technol | Laser annealing device |
| JPS6199323A (en) * | 1984-10-19 | 1986-05-17 | Sharp Corp | Apparatus for manufacturing monocrystalline thin film |
| JPS6247115A (en) * | 1985-08-26 | 1987-02-28 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS6266617A (en) * | 1985-09-19 | 1987-03-26 | Agency Of Ind Science & Technol | Laser light emitting device |
| EP0987577A2 (en) * | 1998-09-14 | 2000-03-22 | Fujitsu Limited | Light intensity distribution converting device and optical data storage apparatus |
| EP0987577A3 (en) * | 1998-09-14 | 2001-07-04 | Fujitsu Limited | Light intensity distribution converting device and optical data storage apparatus |
| EP1321795A2 (en) * | 1998-09-14 | 2003-06-25 | Fujitsu Limited | Light intensity distribution converting device and optical data storage apparatus |
| EP1321795A3 (en) * | 1998-09-14 | 2004-01-07 | Fujitsu Limited | Light intensity distribution converting device and optical data storage apparatus |
| EP1569024A1 (en) * | 1998-09-14 | 2005-08-31 | Fujitsu Limited | Light intensity distribution converting device and optical data storage apparatus |
| JP2013162010A (en) * | 2012-02-07 | 2013-08-19 | Dainippon Screen Mfg Co Ltd | Heat treatment equipment |
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