JPS5961136A - Mask defect inspecting device - Google Patents
Mask defect inspecting deviceInfo
- Publication number
- JPS5961136A JPS5961136A JP57171852A JP17185282A JPS5961136A JP S5961136 A JPS5961136 A JP S5961136A JP 57171852 A JP57171852 A JP 57171852A JP 17185282 A JP17185282 A JP 17185282A JP S5961136 A JPS5961136 A JP S5961136A
- Authority
- JP
- Japan
- Prior art keywords
- defect
- white
- black
- detected
- inspected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007547 defect Effects 0.000 title claims abstract description 172
- 239000000872 buffer Substances 0.000 claims abstract description 21
- 238000007689 inspection Methods 0.000 claims abstract description 21
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 238000013461 design Methods 0.000 claims abstract description 11
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000012937 correction Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241000201776 Steno Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、半導体集積回路の製作時に用いられるフォト
マスクの欠陥の有無及びパターンの正否を検査するマス
ク欠陥検査装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a mask defect inspection apparatus for inspecting the presence or absence of defects and the correctness of a pattern of a photomask used in the manufacture of semiconductor integrated circuits.
従来、フォトマスクに形成されたパターンノ検査を行う
マスク欠陥検査装置においては、フォトマスクにパター
ンを形成する隙に用いらｔＬる設創データに基づいて発
生された走査信号（第２の走査信号）と、設言１データ
を基に形成された被検査・セターンから得られた走査信
号（第１の走査信号）とを比較照合して欠陥め有無及び
パターンの正否′ｆ！：＠査している。っまシ、上記第
１及び第２の走を信号の比較にょシ欠陥パターンの大き
さを認識してその犬＠きと許容欠陥最大寸法との比較を
行い、許容欠陥最大寸法よシ小さい欠陥パターンに関し
てはフォトマスクからウェーハへ／４’ターンを転写さ
れても悪影響を及ぼさない等の理由によシ、欠陥と判定
しガいと云う検査を行っている。Conventionally, in a mask defect inspection apparatus that inspects a pattern formed on a photomask, a scanning signal (a second scanning signal) generated based on design data used in the gap between forming a pattern on a photomask is used. ) and the scanning signal (first scanning signal) obtained from the seta to be inspected formed based on the Proposition 1 data to check whether there is a defect or not and whether the pattern is correct or incorrect'f! :@Inspecting. After comparing the first and second signals, the size of the defect pattern is recognized and compared with the maximum allowable defect size, and defects smaller than the maximum allowable defect size are detected. As for the pattern, we conduct an inspection to determine if it is a defect, for reasons such as the fact that even if a 4' turn is transferred from the photomask to the wafer, it will not have any adverse effect.
しかしながら、この種の装置にあっては次のような問題
があった。すなわち、被検査・平ターンには白糸欠陥と
熱系欠陥とが存在し、白糸欠陥に許容される欠陥寸法と
熱系欠陥に許容される欠陥寸法とは一般に異々る大きさ
である。そして、上述した従来装置では許容欠陥最大寸
法した検査しかできない。このため、欠陥検査後の修正
工程において白糸欠陥か、熱系欠陥かを人為的に確認し
、さらに修正を要する欠陥が要しない欠陥かを判定する
必要が生じ、したがって検査から修正までの時間が長く
なるという問題がある。また、白糸欠陥と熱系欠陥とを
検出する場合に、前記走査信号の違いにょシ微妙な誤差
が生じる等の問題があった。However, this type of device has the following problems. That is, a white thread defect and a heat-related defect exist in the flat turn to be inspected, and the defect size allowed for a white thread defect and the defect size allowed for a heat-based defect are generally different in size. The conventional apparatus described above can only inspect the maximum allowable defect size. For this reason, in the correction process after defect inspection, it is necessary to manually confirm whether the defect is a white thread defect or a heat-related defect, and further determine whether a defect that requires correction is a defect that does not require correction, thus reducing the time from inspection to correction. The problem is that it is long. Further, when detecting white yarn defects and thermal defects, there is a problem that a slight error occurs due to the difference in the scanning signals.
本発明の目的は、白糸欠陥及び熱系欠陥に許容される各
欠陥寸法の差に起因する欠陥検出誤差をなくすことがで
き、検査スループットの向上及び欠陥検査後の修正工程
におけるスループット向上等をはかシ得るマスク欠陥検
査装置を提供することにある。An object of the present invention is to be able to eliminate defect detection errors caused by differences in allowable defect dimensions for white yarn defects and thermal defects, and to improve inspection throughput and throughput in correction processes after defect inspection. An object of the present invention is to provide a mask defect inspection device that can be used easily.
本発明の骨子は、白糸欠陥と熱系欠陥とをそれぞれ独立
な許容欠陥最大寸法と比較し、より正確な欠陥検査を行
うことにある。The gist of the present invention is to perform more accurate defect inspection by comparing white thread defects and heat-related defects with independent maximum allowable defect dimensions.
すなわち本発明は、半導体集積回路の製作に用いられる
フォトマスクの欠陥の有無及び・やターンの正否を検査
するマスク欠陥検査装置において、上記フォトマスクに
光を照射する元照射部と、上記光の照射及びフォトマス
ク上での光照射位置の移動によシ得られる上記フォトマ
スクに形成された被検査パターンに対応する第１の走ｆ
ｆ１ｉ信号を検出する信号検出部と、上記被検査・やタ
ーンを形成する際の設計データを基に得られる第２の走
査信号を発生する基準（ｉ４号発生部と、上記被検査・
ぐターンに許容される熱系欠陥及び白糸欠陥の各最大寸
法が設定され、上記第１及び第２の走査信号の差分を求
め上記被検査パターンの欠陥寸法を検出すると共に黒系
欠陥若しくは白糸欠陥のいずれかであるかを検出し、こ
の検出結果に対応する上記設定された黒系欠陥若しくは
白糸欠陥の許容欠陥寸法と上記検出欠陥寸法とを比較し
検出欠陥寸法が許容欠陥寸法よシ大なるとき欠陥有シと
判定する判定部とを設けるようにしたものである。That is, the present invention provides a mask defect inspection apparatus for inspecting the presence or absence of defects and the correctness of turns of a photomask used in the manufacture of semiconductor integrated circuits. A first scan f corresponding to the pattern to be inspected formed on the photomask obtained by irradiation and movement of the light irradiation position on the photomask.
A signal detection section that detects the f1i signal, a reference (i4 generation section) that generates a second scanning signal obtained based on the design data for forming the above-mentioned test object, and a turn, and the above-mentioned test object.
The maximum dimensions of thermal defects and white thread defects that are allowed in the pattern are set, and the difference between the first and second scanning signals is determined to detect the defect size of the pattern to be inspected, as well as detect black defects or white thread defects. Detect whether the detected defect size is larger than the allowable defect size by comparing the allowable defect size of the black defect or white thread defect set above corresponding to this detection result with the detected defect size. A determining section is provided which determines that there is a defect when there is a defect.
本発明によれば、熱系欠陥と白糸欠陥との修正工程の違
いによシ生じる許容欠陥最大寸法の差・つまシ黒系欠陥
及び白糸欠陥に許容される各欠陥寸法の差に起因する欠
陥検出誤差をなくすことができる。さらＫ、熱系欠陥を
検出する場合と白糸欠陥を検出する場合とでの微妙な走
査信号の誤差分を補正することが可能となる。According to the present invention, defects caused by the difference in the maximum allowable defect size due to the difference in the correction process between heat-related defects and white thread defects, and the difference in the allowable defect sizes for black-colored defects and white thread defects. Detection errors can be eliminated. Furthermore, it is possible to correct subtle errors in scanning signals between when detecting thermal defects and when detecting white yarn defects.
また、熱系欠陥及び白糸欠陥の検出欠陥寸法がそれぞれ
対応する許容欠陥最大寸法と比較されることになるので
、欠陥検査を必要最小限の時間で正確に行うことが可能
であり、欠陥検査のスループットが向上する。しかし修
正を行う際、熱系欠陥か白糸欠陥かを人為的に確認する
作業が不要となシ、検査から修正までの一連の工程での
スループットが向上する等の効果を奏する。In addition, since the detected defect dimensions of heat-related defects and white thread defects are compared with the corresponding maximum allowable defect dimensions, defect inspection can be performed accurately in the minimum amount of time required. Throughput is improved. However, when making a correction, there is no need to manually confirm whether it is a heat-related defect or a white thread defect, and the throughput in a series of processes from inspection to correction is improved.
第１図（ａ）は設計データに応じたパターンを示す平面
図、同図（ｂ）は欠陥の存在する実際の被検査パターン
を示す平面図であり、図中１は正規のパターン、２は白
系欠陥、３は黒糸欠陥を示してｂる。FIG. 1(a) is a plan view showing a pattern according to design data, and FIG. 1(b) is a plan view showing an actual pattern to be inspected in which a defect exists. 3 indicates a white defect, and 3 indicates a black yarn defect.
第２図は本発明の一実施例に係わるマスク欠陥検査装置
の概略構成を示すブロック図である。FIG. 2 is a block diagram showing a schematic configuration of a mask defect inspection apparatus according to an embodiment of the present invention.
図中１１はフォトマスク１２を載置する試料台であシ、
この試料台１ノは計算機１３から指令を受けたステージ
駆動制御部１４によりＸ方向（紙面左右方向）及びＹ方
向（紙面表裏方向）に移動されるものとなっている。そ
して、試料台１ノの移動位置は、例えばレーザ干渉計か
らなるステージ位置測定部１５により測定されるものと
なっている。In the figure, 11 is a sample stage on which a photomask 12 is placed;
This sample stage 1 is moved in the X direction (left/right direction in the paper) and Y direction (front/back direction in the paper) by a stage drive control section 14 that receives commands from the computer 13. The moving position of the sample stage 1 is measured by a stage position measuring section 15 consisting of, for example, a laser interferometer.
一方、試料台１１の上方には、光の（光照射部）１６が
配置されている。光源１６からの光は、試料台１１上に
載置されるフォトマスク１２上にスポット照射され、そ
の透過光が信号検出部１７の受光面に照射される。ここ
で、上記光照射と共に試料台１ノを連続移動させること
により、信号検出部１７ではフォトマスク１２の被検査
パターンに対応した走査信号（第１の走査信号）が検出
される。そして、この検出走査信号は、基準信号発生部
１８により上記被検査パターンを形成する際の設計デー
タに基づいて発生された走査信号（第２の走査信号）と
共に、欠陥判定部１９に供給されるものとなっている。On the other hand, above the sample stage 11, a light (light irradiation unit) 16 is arranged. The light from the light source 16 is spot irradiated onto the photomask 12 placed on the sample stage 11, and the transmitted light is irradiated onto the light receiving surface of the signal detection section 17. Here, by continuously moving the sample stage 1 along with the light irradiation, the signal detection unit 17 detects a scanning signal (first scanning signal) corresponding to the pattern to be inspected on the photomask 12. This detection scanning signal is then supplied to the defect determining section 19 together with a scanning signal (second scanning signal) generated by the reference signal generating section 18 based on the design data when forming the pattern to be inspected. It has become a thing.
欠陥判定部１ｇは、第３図に示す如く検出データバッフ
ァ２Ｊ 、設計テータパッファ２２、第１データ変換回
路２３、第２データ変換回路２４、差分信号発生回路２
５、欠陥判定回路２６、黒糸欠陥判定バッファ２７及び
白糸欠陥判定・々ソファ２フから構成されている。すな
わち、前記信号検出部１７からの第１の走査信号は検出
データバッファ２ノに登録され、第１データ変換回路２
３を介して差分信号発生回路２５ｖＣ送られる。同様に
前記基準信号発生部１８からの第２の走査信号は設計デ
ータバッファ２２に登録され、第２デー−−夕変換回路
２４を介して差分信号発生回路２５に送られる。差分信
号発生回路２５は上記入力した各走査信号の差、前記被
検査・母ターンの欠陥寸法を検出するものであシ、この
検出欠陥寸法は欠陥判定回路２６に送られる。欠陥判定
回路２６は、上記差分信号発生回路２５の出力信号の正
負に基づいて検出欠陥が黒糸欠陥か白糸欠陥であるかを
検出し、この検出結果に基づき黒糸欠陥判定バッファ２
７或いは白糸欠陥判定バッファ２８に登録されたｒ「容
欠陥最大寸法と」二記検出欠陥寸法とを比較照合し、検
出欠陥寸法が許容欠陥最大寸法よシ大なるとき欠陥有り
と判定するものである。そして、この欠陥判定回路２６
の出力イロ号が欠陥判定部１９の判定情報として前記＝
＋−’Ｊｉ−’ｒｉ＆：１３に送出されるものとなって
いる。なお、黒糸欠陥判定バッファ２７に登録された約
容欠陥何法は黒糸欠陥に酌各される最大寸法（スレッシ
、ルドレペル）に相当するものであシ、白糸欠陥判定バ
ッファ２８に登録された許容欠陥寸法は白糸欠陥に許容
される最大寸法（スレッショルドレベル）に相当するも
のである。As shown in FIG. 3, the defect determination section 1g includes a detection data buffer 2J, a design data buffer 22, a first data conversion circuit 23, a second data conversion circuit 24, and a difference signal generation circuit 2.
5, a defect determination circuit 26, a black yarn defect determination buffer 27, and a white yarn defect determination/sofa 2F. That is, the first scanning signal from the signal detection section 17 is registered in the detection data buffer 2, and is transferred to the first data conversion circuit 2.
3 to the differential signal generating circuit 25vC. Similarly, the second scanning signal from the reference signal generating section 18 is registered in the design data buffer 22 and sent to the differential signal generating circuit 25 via the second data converting circuit 24. The difference signal generation circuit 25 detects the difference between the input scanning signals and the defect size of the inspected mother turn, and the detected defect size is sent to the defect determination circuit 26. The defect determination circuit 26 detects whether the detected defect is a black yarn defect or a white yarn defect based on the positive or negative of the output signal of the differential signal generation circuit 25, and based on this detection result, the black yarn defect determination buffer 2
7 or the detected defect size described in 2 is compared with the r ``maximum defect size'' registered in the white yarn defect determination buffer 28, and when the detected defect size is larger than the maximum allowable defect size, it is determined that there is a defect. be. This defect determination circuit 26
The output iro number is the determination information of the defect determination unit 19 as the =
+-'Ji-'ri&:13. It should be noted that the approximate defect method registered in the black thread defect determination buffer 27 corresponds to the maximum dimension (threshold, drepel) taken into account for black thread defects, and is registered in the white thread defect determination buffer 28. The allowable defect size corresponds to the maximum allowable size (threshold level) for white thread defects.
このような構成であれば、欠陥判定部１９の差分信号発
生回路２５により前記第１及び第２の走査信号が比較さ
れ、これによシ欠陥寸法を検出することができる。そし
て、この検出欠陥が前記第１図（ｂ）に示す黒糸欠陥３
である場合、黒糸欠陥判定バッファ２７に登録された許
容欠陥最大寸法と上記検出欠陥寸法とが比較され、検出
欠陥寸法が許容欠陥最大寸法よυ大なるときのみ欠陥有
シと判定される。同様に、検出欠陥が第１図（ｂ）に示
す白糸欠陥２である場合、白糸欠陥判定バッファ２８に
登録された許容欠陥最大寸法と検出欠陥寸法が比較され
、検出欠陥寸法が許容欠陥最大寸法よｐ大なるときのみ
欠陥有シと判定される。つまシ、黒糸欠陥３と白系欠陥
２とが、それぞれに対応する独立した許容欠陥最大寸法
と比較されることになる。したかって、欠陥検査を必要
最小限の時間で、かつ正確に行うことが可能となる。こ
のため、欠陥検査のスループット向上及び修正工程にお
けるスループット向上等をはか！ｌｌ得る。With such a configuration, the first and second scanning signals are compared by the difference signal generating circuit 25 of the defect determining section 19, thereby making it possible to detect the defect size. This detected defect is the black yarn defect 3 shown in FIG. 1(b).
In this case, the maximum allowable defect size registered in the black thread defect determination buffer 27 is compared with the detected defect size, and it is determined that there is a defect only when the detected defect size is υ larger than the maximum allowable defect size. Similarly, when the detected defect is white thread defect 2 shown in FIG. 1(b), the detected defect size is compared with the maximum allowable defect size registered in the white thread defect determination buffer 28, and the detected defect size It is determined that there is a defect only when it is larger than p. The pick, black thread defect 3 and white defect 2 are compared with their respective independent maximum allowable defect sizes. Therefore, defect inspection can be performed accurately and in the minimum amount of time required. For this reason, we are trying to improve the throughput of defect inspection and correction process! Ill get it.
なお、本発明は上述した実施例に限定されるものではな
い。例えば、前記被検査・やターンに対応する第１の走
査信号を検出するだめの手段として、前記試料台を移動
する代りに、前記光源を移動するようにしてもよい。さ
らに、フォトマスクの透過光を検出する代シに、フォト
マスクからの反射光を検出して第１の走査信号を得るこ
とも可能である。また、前記黒糸欠陥判定バッファ及び
白系欠陥判定バッファに登録する各許容欠陥最大寸法は
、検査する・やターンの複雑さに応じて適宜定めればよ
い。その他、本発明の要旨を逸脱しない範囲で、種々変
形して実施することができる。Note that the present invention is not limited to the embodiments described above. For example, as a means for detecting the first scanning signal corresponding to the turn to be inspected, the light source may be moved instead of moving the sample stage. Furthermore, instead of detecting the light transmitted through the photomask, it is also possible to detect the light reflected from the photomask to obtain the first scanning signal. Further, the maximum allowable defect size to be registered in the black yarn defect determination buffer and the white defect determination buffer may be determined as appropriate depending on the complexity of the turn to be inspected. In addition, various modifications can be made without departing from the gist of the present invention.
第１図（ａ）は設計データに対応した・２ターンを示す
平面図、同図（ｂ）はフォトマスク上の種々の欠陥の存
在する被検査・卆ターンを示す平面図、第２図は本発明
の一実施例に係わるマスク欠陥検査装置の概略構成を示
すブロック図、第３図は上記装置の要部構成を具体化し
て示すブロック図である。
１・・・正規のノ＋ターン、２・・・白系欠陥、３・・
・黒糸欠陥、１ノ・・・試料台、１２・・・フォトマス
ク、１３・・・計算機、１４・・ステーノ駆動制馳１部
、１５・・ステージ位置測定部、ノア・・信号検出部、
１８・・・基準信号発生部、１９・・・欠陥判定部、２
ノ・・・検出データバッファ、２２・・・設計データバ
ッファ、２３・・・第１データ変換回路、２４・・・第
２データ変換回路、２５・・・差分信号発生回路、２６
・・・欠陥判定回路、２７・・・黒糸欠陥判定バッファ
、２８・・・白糸欠陥判定バッファ。
出願人代理人 弁理士 鈴 江 武 彦第１図
（０）
（ｂ）
第２図Fig. 1(a) is a plan view showing two turns corresponding to design data, Fig. 1(b) is a plan view showing a turn to be inspected with various defects on the photomask, and Fig. 2 is a plan view showing two turns corresponding to the design data. FIG. 3 is a block diagram showing a schematic configuration of a mask defect inspection apparatus according to an embodiment of the present invention. FIG. 1... regular no + turn, 2... white defect, 3...
・Black yarn defect, 1... Sample stage, 12... Photomask, 13... Computer, 14... Steno drive control part 1, 15... Stage position measurement unit, Noah... Signal detection unit ,
18... Reference signal generation section, 19... Defect determination section, 2
No...Detection data buffer, 22...Design data buffer, 23...First data conversion circuit, 24...Second data conversion circuit, 25...Difference signal generation circuit, 26
. . . Defect determination circuit, 27 . . . Black yarn defect determination buffer, 28 . . . White yarn defect determination buffer. Applicant's agent Patent attorney Takehiko Suzue Figure 1 (0) (b) Figure 2
Claims (2)
に光を照射する光照射部と、上記光の照射及びフォトマ
スク上での光照射位置の移動によシ得られる上記フォト
マスクに形成された被検査・２ターンに対応する第１の
走査信号を検出する信号検出部と、上記被検査・ぐター
ンを形成する際の設計データを基に得られる第２の走査
信号を発生する基準信号発生部と、前記被検査・母ター
ン拠許容される黒糸欠陥及び白糸欠陥の各最大寸法が設
定され、前記第１及び第２の走査信号の差分を求め前記
被検査パターンの欠陥寸法を検出すると共に黒系欠陥若
しくは白糸欠陥のいずれかであるかを検出し、この検出
結果に対応する上記設定された黒系欠陥若しくは白糸欠
陥の許容欠陥寸法と上記検出欠陥寸法とを比較し検出欠
陥寸法が許容欠陥寸法より犬なるとき欠陥有りと判定す
る判定部とを具備してなることを特徴とするマスク欠陥
検査装置。(1) A light irradiation part that irradiates light onto a photomask used in the production of semiconductor integrated circuits, and a light irradiation part formed on the photomask obtained by irradiation of the light and movement of the light irradiation position on the photomask. A signal detection unit that detects a first scanning signal corresponding to the two turns to be inspected, and a reference signal generator that generates a second scanning signal obtained based on design data when forming the two turns to be inspected. and the maximum dimensions of black yarn defects and white yarn defects that are allowed based on the inspected pattern and the mother turn are set, and the difference between the first and second scanning signals is determined to detect the defect size of the inspected pattern. Also, it detects whether it is a black defect or a white thread defect, and compares the detected defect size with the above-set allowable defect size of the black defect or white thread defect corresponding to this detection result, and determines the detected defect size. 1. A mask defect inspection device comprising: a determination unit that determines that a defect exists when the defect size is smaller than the allowable defect size.
れる黒糸欠陥の最大寸法が保持された黒糸欠陥判定バッ
ファ、前記被検査パターンに許容される白糸欠陥の最大
寸法が保持された白系欠陥判定パ、ファ、前記第１及び
第２の走査信号 −の差分を求める差分信号発生回路、
この差分信号発生回路で得られる差分信号に基づいて前
記被検査パターンの欠陥寸法を検出すると共に黒系欠陥
若しくは白糸欠陥のいずれであるかを検出し、この検出
結果に対応する上記各パ、ファのいずれかに保持された
許容欠陥寸法と上記検出欠陥寸法とを比較し検出欠陥寸
法が許容欠陥寸法よ、９犬なるとき欠陥有シと判定する
判定回路からなるものでるる特許請求の範囲第１項記載
のマスク欠陥検査装置。(2) The determination unit includes: - a black yarn defect determination buffer in which the maximum dimension of a black yarn defect allowed in the pattern to be inspected is held; a maximum dimension of a white yarn defect allowed in the pattern to be inspected is held; a differential signal generation circuit that calculates the difference between the white defect determination signals P, F, and the first and second scanning signals;
Based on the differential signal obtained by this differential signal generation circuit, the defect size of the pattern to be inspected is detected, and whether it is a black defect or a white defect is detected, and each of the patterns and patterns corresponding to this detection result is Claim 1 comprising a determination circuit that compares the detected defect size with the allowable defect size held in any of the above, and determines that there is a defect when the detected defect size is 9 times larger than the allowable defect size. The mask defect inspection device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57171852A JPS5961136A (en) | 1982-09-30 | 1982-09-30 | Mask defect inspecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57171852A JPS5961136A (en) | 1982-09-30 | 1982-09-30 | Mask defect inspecting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5961136A true JPS5961136A (en) | 1984-04-07 |
Family
ID=15930965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57171852A Pending JPS5961136A (en) | 1982-09-30 | 1982-09-30 | Mask defect inspecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961136A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60250629A (en) * | 1984-05-25 | 1985-12-11 | Fujitsu Ltd | Inspecting method of mask |
| US7257247B2 (en) | 2002-02-21 | 2007-08-14 | International Business Machines Corporation | Mask defect analysis system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5258373A (en) * | 1975-11-07 | 1977-05-13 | Fujitsu Ltd | Inspection for defects of pattern forming film |
| JPS5491181A (en) * | 1977-12-28 | 1979-07-19 | Fujitsu Ltd | Pattern deffect discrimination |
| JPS57120807A (en) * | 1980-12-18 | 1982-07-28 | Ibm | Object inspector |
-
1982
- 1982-09-30 JP JP57171852A patent/JPS5961136A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5258373A (en) * | 1975-11-07 | 1977-05-13 | Fujitsu Ltd | Inspection for defects of pattern forming film |
| JPS5491181A (en) * | 1977-12-28 | 1979-07-19 | Fujitsu Ltd | Pattern deffect discrimination |
| JPS57120807A (en) * | 1980-12-18 | 1982-07-28 | Ibm | Object inspector |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60250629A (en) * | 1984-05-25 | 1985-12-11 | Fujitsu Ltd | Inspecting method of mask |
| JPH048780B2 (en) * | 1984-05-25 | 1992-02-18 | ||
| US7257247B2 (en) | 2002-02-21 | 2007-08-14 | International Business Machines Corporation | Mask defect analysis system |
| US7492940B2 (en) | 2002-02-21 | 2009-02-17 | International Business Machines Corporation | Mask defect analysis system |
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