JPS5959475A - Manufacture of thin film thermal head - Google Patents
Manufacture of thin film thermal headInfo
- Publication number
- JPS5959475A JPS5959475A JP57171406A JP17140682A JPS5959475A JP S5959475 A JPS5959475 A JP S5959475A JP 57171406 A JP57171406 A JP 57171406A JP 17140682 A JP17140682 A JP 17140682A JP S5959475 A JPS5959475 A JP S5959475A
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal lead
- lead layer
- resistive film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010409 thin film Substances 0.000 title description 13
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 238000000059 patterning Methods 0.000 abstract description 2
- 238000007738 vacuum evaporation Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 88
- 230000001681 protective effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- JVJQPDTXIALXOG-UHFFFAOYSA-N nitryl fluoride Chemical compound [O-][N+](F)=O JVJQPDTXIALXOG-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は感熱記録装置の記録ヘッドとして用いられる
薄膜サーマルヘッドの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a thin film thermal head used as a recording head of a thermal recording device.
感熱記録装置の配録ヘッドとして用いられる薄膜サーマ
ルヘッドは、従来第１図１たけ第２図に示す如き桿・１
造を有している。即ち、アルミナ基板Ｊａ上に保温性と
表面スムーズネスを得るべくグレーズ層１ｂを政十乃至
百ミクロン程度の厚さに形成し、更にその製造工程にお
ける各種薬品による腐蝕から保訛する為にＴａ２０．等
の下地保詠層ＩＣを形成し、これを絶縁性基板Ｉとして
いる。この絶縁性基板１上に発熱体としての抵抗ｆＪＨ
’ｉ ２，第１および第２のメタルリード膜３，４を積
層付加し、これをＰＥＰ （フォトエングレービングプ
ロセス）法ヲ用いてパターニングして、所望の記録解（
２）度を得るピッチ。A thin film thermal head used as a recording head of a thermal recording device has conventionally been a rod-type head as shown in Fig. 1 and Fig. 2.
It has a structure. That is, the glaze layer 1b is formed on the alumina substrate Ja to a thickness of about 10 to 100 microns in order to obtain heat retention and surface smoothness, and furthermore, in order to protect it from corrosion caused by various chemicals in the manufacturing process, a Ta20. A base protection layer IC such as the following is formed, and this is used as an insulating substrate I. A resistor fJH as a heating element is placed on this insulating substrate 1.
'i 2. Add the first and second metal lead films 3 and 4 and pattern them using the PEP (photo-engraving process) method to obtain the desired recording solution (
2) Pitch to obtain degree.
線幅に加工している。しかるのち、上記第１および第２
のメタルリード膜３，４の一部をエツチング除去して前
記抵抗膜２を露出させたのち、それらの上に耐摩耗性保
設膜５を形成して前記抵抗膜２等の酸化と感熱記録紙と
の摺動による摩粁から保護すＺ）構造となっている。Processed to line width. After that, the above first and second
After removing a portion of the metal lead films 3 and 4 by etching to expose the resistive film 2, a wear-resistant maintenance film 5 is formed thereon to prevent oxidation of the resistive film 2, etc. and heat-sensitive recording. It has a structure that protects it from abrasion caused by sliding with paper.
尚、上記第１」、−よび第２のメダルリード膜３゜４
Ｌ７） ＰＥＰ法によるエツチング除去に際しては、１
ツチング液を適宜選択することにより、第１図および第
２図にそれぞカフ示すように複数層のリード膜３，４を
所謂階段状にｌ）（成して感熱記録紙との外的密着性を
高め、配録品質の向上と熱効率の改良を図るべく工夫が
なされている。In addition, the above-mentioned first medal lead film 3゜4
L7) When removing etching using the PEP method, 1
By appropriately selecting the coupling liquid, the multiple layers of lead films 3 and 4 can be formed into a so-called stepped shape (l) (as shown in FIGS. 1 and 2, respectively) (to achieve external close contact with the thermal recording paper). Efforts have been made to improve performance, recording quality, and thermal efficiency.
寸た第２図に示すものは、４′￥に抵］１；、膜２ン・
その発ｐ％（、ｇを含む所定範囲にのみ形成して、その
生産性を高めたものである。ちなみに、感熱記録に供さ
れる抵Ｊ／”（、膜２の発熱体長ｍけ通當数杓ミクロン
程度であり、ｌｌα厚や比抵抗を再現性良く安定にＩｎ
る為、上記抵抗膜２の長さｎｌ−１、従来一般に１０〜
３（）祁に定４６られている。The one shown in FIG.
It is formed only in a predetermined range including p%(,g) to increase its productivity.Incidentally, the resistance used for thermal recording is J/''(, the length of the heating element of the film 2, m). It is about a few microns, and the llα thickness and resistivity can be stably measured with good reproducibility.
Therefore, the length nl-1 of the resistive film 2 is conventionally generally 10~
3() is determined by Qi46.
ところで従来、この秤の薄膜サーマルヘッドにあっては
第１のメタルリード層４にはＡｕが用いられ、第２０メ
４ルリード層３にＩｒＪ−Ｃｒが用いられている為に非
常に高価なものとなることが否めなかった。即ち、Ａｕ
からなる第２のメタルリードＭ ｒｔは、抵抗膜２に対
する主たるリード体として作用するものであり、通常】
乃至１０ミクロン程度のｌｑさに形成される。そしてｃ
ｒからなる＠Ｊのメタルリード層３ば、上記Ａｕからな
る第２のメタルリード層４を安定・確実に付着させる為
に設けらｈるもので、前記段１ｆ＋５の長さｌにおいて
ＩＪ −１・°休として機能する領ｌ成ｌｄ Ｏ，５ｒ
ｒｍ稈ＩＷと、その抵抗膜については実際上殆んど無視
することができる。尚、この第」のメタルリード層３の
膜厚は５００乃至］ ０００オングストロ一ム稈度であ
る。そして、このようにして第２のメタルリード層４と
してＡｕが用いられている為、前記保護膜５を形成する
に際しては、上記保護膜５がＡｕに直接付着し々いこと
から、Ｃｒ膜を介在させる等の工夫が施されている。つ
１す、抵抗膜２のリード体として従来一般［Ａｕが用い
られている為に、その製作が困難であり、高価であると
言う問題があっブζ。By the way, conventionally, in the thin film thermal head of this scale, Au is used for the first metal lead layer 4 and IrJ-Cr is used for the 20th metal lead layer 3, so it is very expensive. It was undeniable that this would happen. That is, Au
The second metal lead Mrt acts as the main lead body for the resistive film 2, and usually]
It is formed to have a thickness of about 10 microns. and c
The @J metal lead layer 3 made of r is provided in order to stably and reliably attach the second metal lead layer 4 made of Au, and has an IJ −1 at the length l of the step 1f+5.・Region that functions as a rest area ld O, 5r
The rm culm IW and its resistive film can practically be ignored. The thickness of this second metal lead layer 3 is 500 to 1,000 angstroms. Since Au is used as the second metal lead layer 4 in this way, when forming the protective film 5, the protective film 5 tends to adhere directly to Au, so a Cr film is not used. Efforts have been made such as intervening. First, since Au has been conventionally used as the lead body of the resistive film 2, there is a problem in that it is difficult and expensive to manufacture.
そこで近年、上記Ａｕに代えて他のメタル利ｔ１をリー
ド体として用いることが神々研究されてい乙。然し乍ら
、以下に示すようにイ（０々の問題があり、その実用化
が帷しかっブｃつ即ち、Ａｕに代えてＡ〕やＣｕを用い
ようとする場合、例え（ブＴａ ５ｉ０２からなる抵抗
膜２をＰＥＰ法により加工するとき、その工、７チング
液に）、硝酸液が用いられる為、上Ｎ？ Ａ７！やＣｕ
も同時に侵されてしまうと言う問題が生じる。芥だＡｕ
に代えてＣｒを用いようとすると、その比抵抗が約９倍
もあるので、リード膜厚を相当厚くする心火が生じる。Therefore, in recent years, research has been carried out on using other metals as lead materials instead of the above-mentioned Au. However, as shown below, when trying to use A instead of Au or Cu, there are problems that make it difficult to put it into practical use. When processing the film 2 by the PEP method, a nitric acid solution is used as the processing solution (7), so there may be
The problem arises that both are simultaneously attacked. Au
If an attempt is made to use Cr in place of Cr, its resistivity is about nine times higher, which causes a core fire that makes the lead film thickness considerably thicker.
この為、その微細加工が問題となり、寸だその生産性の
点でも問題が生じた。更にはＣｒをリード体とした場合
、ＩＣチ、ｆへのワイヤ・ｊ？ンディングの取出しにお
けるボングビリティの問題も生じた。For this reason, the microfabrication became a problem, and a problem also occurred in terms of productivity. Furthermore, if Cr is used as the lead body, the wires to ICs 1 and 2 and j? Problems with bongability during removal of the binding also arose.
本発明はこのような事情を考應してなされたもので、そ
の目的とするところは、リード体材料として安価なメタ
ル材料を用いて生産性良く薄膜サーマルヘッドを製作す
ることのできる実用性の高い′ｆｆｆｆ−マルヘッドの
製造方法を提供することにある。The present invention has been made in consideration of the above circumstances, and its purpose is to provide a practical method for manufacturing a thin film thermal head with high productivity using an inexpensive metal material as the lead body material. It is an object of the present invention to provide a method for manufacturing a high 'ffff-mul head.
本発明は絶１縁性基板上に帯状に抵抗膜を形１：ｔＩン
し／（のぢ、その上に第１のメタルリ−ド層と安価なメ
タル材本′１からなる第２のメタルリード層とを積層形
成し、この積層体全ストライプ状に・ぞターン加工した
のち前記第２のメタルリード層のｔＪＬ抗膜に対向する
領域をエツチング除去してその喰なりをなくし、その後
第１のメタルリード層を部分的にエツチング除去して抵
抗ｊ＋′Ｌを露出さぜるようにしたものである。In the present invention, a resistive film is formed in the form of a band on an insulating substrate. After forming a laminate with a lead layer and turning the entire laminate into a stripe shape, the region of the second metal lead layer facing the tJL anti-film is removed by etching to eliminate the gap, and then the first metal lead layer is etched. The metal lead layer is partially etched away to expose the resistor j+'L.
Ｕｅって本発明によれば、第２のメタルリード層が抵抗
膜と沖なり合うことがないので、抵抗膜のエツチング加
工時に第２のメタルリード層が侵されることがない。故
に第２のメタルリード層としてΔ！やＣｕ等の安価なメ
タル材ネ１否・用いることが可能となり、生産性良く裾
゛ｌ戻ザーマルヘッドを簡易に製作することを可能とす
るり１の実用上多大な効果が奏せらｆｌ、る。According to the present invention, the second metal lead layer does not overlap the resistive film, so the second metal lead layer is not corroded during etching of the resistive film. Therefore, as the second metal lead layer, Δ! It has become possible to use inexpensive metal materials such as copper and copper, and has great practical effects, making it possible to easily manufacture hem-returning thermal heads with good productivity. .
す、下、図面を参照して本発明の一実施例につき説明す
る。Below, one embodiment of the present invention will be described with reference to the drawings.
第３図および第４図はそハ、それ本発明に係る薄膜サー
マルヘッド゛の実施例ＩＭ造を示す図である。尚、従来
へ、ｌｏと同一（％分には同−符号を付して説明する。FIGS. 3 and 4 are diagrams showing an embodiment of the IM structure of a thin film thermal head according to the present invention. It should be noted that, conventionally, it is the same as lo (the percentage will be described with the same sign).
基板Ｉは、例ズ−ば熱伝導性が良く、月つ表面平滑化さ
ｉまた゛アルミナ′Ｊ７（板ｌａ上に、その保ｉ％口件
と表面スｊ・−ズネスを得るべくり１／−ズｆｊ；？、
Ｉ ＋＋を騎士乃至百ミク【１ン稈ｎｙの厚さに焼、
成付陪形成し、その上に薬品による廐蝕から保Ｋｔ！＋
する為の下地保ｈΦ膜１ｃとしてＴａ２Ｏ３を０５乃至
１．０ミクロンの厚さに付着して構成されろう
このような（トイ成の絶縁性基板Ｉ上に抵抗膜２として
例えばＴａ Ｓ＋０２を厚さ３０００ ＝ ５０００
Ｘ程度にス・Ｐワタリング形成する。この抵抗膜２の付
着形成の領域幅ｎは、財に示す如く所定の狭い範囲とす
る。尚、この際、幅ｎなるマスクを用いて上記抵抗膜２
をスパッタリング形成すると、前記基板Ｉとマスクとの
間に多少の隙間ができ、スノやツタリング膜（抵抗膜２
）が廻り込んで４１１着する。そしてこの膜は伺渚力が
弱いことから、その後リード層のエツチング形成を行う
とき、子の増大に耐えらノ１なくなって剥離するノｒｙ
＜ ｈが生じる。従って、＃ａ ｎの抵抗膜２を・形Ｉ
ＪｋするにＵＪ、■、抗模膜２舛板Ｉの全面、゛またけ
幅ｎより広い範囲に亘ってスパッタリング形成したのち
、ＰＥＰ法によって幅ｎに寸法規制するようにすること
が好ましいう寸だ別の手段と１〜では、リフト詞フによ
りｌ１ｌｉ１）ｎのイｉシ状に抵抗ル・１２乞形成して
もよく、このようにすれば生産性に優れると言う効果が
奏せられる。即ち、ホトレジストの如き塗料を幅ｎの領
域を除い−ｃ（＝Ｊ摺し、乾燥固化したのち、これをマ
スクとして抵抗ｌｌφ２をスノぐツタリング形）戊する
。その後、」−記塗料を有機溶剤にて酵解除去するよう
にすれは、幅ｎの抵抗ｖ２をｆｆ１ｉ易に、且つ確実に
イテ］漸形成することが可能となる。尚、上記抵抗膜２
の幅（１は、例えば５喘８度に定められる。まだこのよ
うな抵抗膜２の形成法によれば、所謂屋根瓦式に積重ね
てスパッタリング処理を行い？するので、その生産性が
良い。The substrate I, for example, has a good thermal conductivity and has a smooth surface or an alumina J7 (plate la), which has a surface smoothness of 1/2 to obtain its retention and surface smoothness. -zufj;?,
Bake I++ to a thickness of 1 inch to 100 mm,
It is formed as a result of growth and is protected from corrosion caused by chemicals! +
For example, Ta S+02 is deposited to a thickness of 0.5 to 1.0 microns as a resistive film 2 on an insulating substrate I of a toy type. 3000 = 5000
Form S/P wattering to about X. The width n of the region where the resistive film 2 is formed is set in a predetermined narrow range as shown in FIG. At this time, using a mask with a width of n, the resistive film 2 is
When the resistive film 2 is formed by sputtering, a slight gap is created between the substrate I and the mask.
) came around and finished 411th. Since this film has a weak beaching force, when the lead layer is subsequently etched, it cannot withstand the growth of the lead layer and may peel off.
< h occurs. Therefore, the resistive film 2 of #a n is of the form I
For Jk, it is preferable to sputter the entire surface of the two anti-retardant plates I over an area wider than the straddling width n, and then adjust the dimensions to the width n using the PEP method. As an alternative method, the resistors may be formed in the shape of l1li1)n using the lift word f, and in this way, the effect of being excellent in productivity can be achieved. That is, a paint such as a photoresist is applied to an area of width n except for -c (=J), dried and solidified, and then using this as a mask, a resistor 11φ2 is smeared. Thereafter, by fermenting and removing the paint with an organic solvent, it becomes possible to easily and reliably form a resistor v2 having a width n. In addition, the above-mentioned resistive film 2
The width (1 is defined as, for example, 5 degrees and 8 degrees.) According to this method of forming the resistive film 2, the productivity is good because the resistive film 2 is stacked in a so-called roof tile style and subjected to sputtering.
しかるのち、上記抵抗膜２を形成してなる基板Ｉの上面
に、第１のメタル９〜１層３としてのＣｒ膜をＰｅ窒蒸
着またはスパッタリングにより約１．０μ７）２の厚さ
に付着形成すＺ、。このリード層３についても例えば幅
ｑの範囲に亘って帯状に形成する。但し、上記幅は（ｑ
＞ｎ）となるべく、Ｃｒ膜によって前記抵抗膜２が完全
に援われるようｉＣすることは言う捷でもない。Thereafter, on the upper surface of the substrate I on which the resistive film 2 is formed, a Cr film as the first metal layer 3 is deposited to a thickness of about 1.0μ7)2 by Pe nitride deposition or sputtering. Su Z. This lead layer 3 is also formed in a band shape over a range of width q, for example. However, the above width is (q
>n), it is a matter of course to carry out iC so that the resistive film 2 is completely supported by the Cr film.
その後、上記Ｃｒ１ｌｉＪ上に、第２のメタルリード層
４と１７てのＡ！膜を真空蒸着またＯまス・々ラグリン
グによって、約５μｍの厚さに形成する。この人、Ａ暎
ｐよ、例えば基板Ｉの全面に付着形成したのちＰＥＰに
よって前記抵抗膜２に対向する部分を、例えば（２ａ＋
ｍ）の範囲に亘って窓状にエツチング除去したり、ある
いは上記（２１＋ｍ）の範囲を除いて還択的に付着形成
するようにマスクを用いて行うようにしでもよい。Thereafter, the second metal lead layers 4 and 17 are formed on the Cr1liJ. The film is formed to a thickness of about 5 μm by vacuum evaporation or O-mass lag ring. This person, Mr. A, will deposit the entire surface of the substrate I and then apply PEP to the part facing the resistive film 2, for example (2a+
It is also possible to perform window-like etching and removal over the range (m), or alternatively to selectively deposit and form the film except for the range (21+m) using a mask.
これによって発熱抵抗膜２に対向する部ｒ■に第２のメ
タルリード層（Ａ’ Ｑｉ ） ４が存在することのな
い薄膜積層体ｔｉ’ｉ造が得ら１Ｌる。As a result, a thin film laminate ti'i structure is obtained in which the second metal lead layer (A'Qi) 4 is not present in the portion r2 facing the heating resistor film 2.
しかるのら上記祐層体を、所望とする解像度を１（でる
為の定められたピッチで、且つ紳幅合有慢′２．ストラ
イプ状マスクを用い、ＰＥＰＶ？ｌよってｉＲ４−ニン
グする。この）やターニングは、図面中、紙面と垂直な
方向に所定ピッチで抵抗膜２が切断される如く行われる
。ぞして、これに上りβりえは８４μｍ７Ｚピツチで５
４μｍ線幅の抵抗ＩＩゑ２の配列パターンが得られるこ
とになる。尚、前述しプこ（２ｇ−ｔ−ｍ ）の幅は約
１０悶程度に定められる。Then, the above-mentioned thick layer body is subjected to iR4-coating using PEPV?l using a striped mask with a desired resolution of 1 (with a predetermined pitch and a width of 2.2 mm). ) and turning are performed so that the resistive film 2 is cut at a predetermined pitch in a direction perpendicular to the plane of the drawing. Therefore, the upstream β rie is 84 μm 7Z pitch and 5
An array pattern of resistors II2 with a line width of 4 μm is obtained. In addition, the width of the puko (2g-tm) mentioned above is set to about 10g-tm.
その後、前記抵抗膜２上のＣｒ膜の一部ｆ：ＰＥＰ法に
より除去し、抵抗膜２の一部を露出させろ。After that, a part f of the Cr film on the resistive film 2 is removed by the PEP method to expose a part of the resistive film 2.
この露出幅ｎｌは、例えば２ （１０μｍ程度に定めら
れる。そして、これらの処理を終了したのりその上に保
内膜５を形成して第３図寸たｄ、第４図に示す構造の薄
膜サーマルヘッドが完成される。This exposure width nl is determined to be, for example, about 2 (10 μm).Then, after these treatments are completed, an endoprotective membrane 5 is formed on it, and a thin film having the structure shown in Fig. 3 (d) and Fig. 4 is formed. The thermal head is completed.
尚、第３図に示す構造のヘッド標−５Ｃｒ膜の・（ｊ前
節ａＨを、抵抗膜２の端部に重なるＭ置からＡノＩｌ々
に重なる自ｒ面゛までとしたものである。これに対して
第４図に示すものはＣｒ１ｌφをΔ−４膜下の全域に残
したものである。このようにＣｒ膜をその全域に残す（
Ｕ造とする場合、上１１ピＣｒ膜とＡ／膜とを連続的に
付着形成できるので生産性が良い等の効果が奏せられる
。またこの利点を活かす上では、Ｃｒ膜の膜厚をあ捷り
厚＜ １．ない方が好ましい。It should be noted that the head mark 5Cr film having the structure shown in FIG. On the other hand, in the case shown in Fig. 4, Cr1lφ is left over the entire area under the Δ-4 film.In this way, the Cr film is left over the entire area (
In the case of the U construction, the upper 11-pi Cr film and the A/film can be continuously deposited, so that effects such as good productivity can be achieved. In addition, in order to take advantage of this advantage, the thickness of the Cr film should be adjusted so that the thickness is less than 1. It is preferable not to have it.
また前記保護膜５の形成幅Ｄ （／Ｃ関しては、Δｅ膜
の内側とするようにしてもよい。つ捷り第３図に示すも
のではＤ＞（ｚ／＋ｍ）なるφｐ囲に保護膜を形成して
いるが、Ｄ（（’ ２ ｌ十ｍ ）なる範囲としてもよ
い。この場合、（２γ十ｍ）を小格＜シてもよく、逆に
大きくすることによって達成してもよい。′８）だ大き
くする場合にけＣｒ膜模の膜厚を厚くし、長さｌが大き
くなってもり一１゛抵抗が大きくならないようにする等
の工夫を加じｔことが望ましい。In addition, the formation width D (/C) of the protective film 5 may be set inside the Δe film. In the case shown in FIG. Although a film is formed, it may also be in the range D(('2l0m). In this case, (2γ0m) may be smaller than shi, or conversely, it may be achieved by increasing it. 8) When increasing the size, it is desirable to take measures such as increasing the thickness of the Cr film so that the resistance does not become too large even though the length l becomes large.
かくして、上記の如き構造ＩＣよれば、主としてリード
体としてナリｊく第２のメタシリ−１゛層４が抵抗膜２
と重なることがないので、上記第２のメタルリード層４
としてＡノ膜を用いても従来のような問題を招くことが
ない。つ甘り抵抗膜２のパターニング処理時に第２のメ
タルリート）督４が侵されることがなく、上述したＡノ
膜の採用が可能となる。従って、Ａｕに代えてＡノを用
いるので、安価に製作することがＦｊＪ能となり実用上
多大な効果が奏せられる。Thus, according to the IC structure as described above, the second metasilicon layer 4, which is mainly used as a lead body, is the resistive film 2.
The second metal lead layer 4 does not overlap with the second metal lead layer 4.
Even if an A-no film is used as a material, problems like the conventional ones are not caused. The second metal layer 4 is not attacked during the patterning process of the thin resistive film 2, making it possible to employ the above-mentioned A film. Therefore, since A is used instead of Au, FjJ can be manufactured at low cost, and a great practical effect can be achieved.
次に上配措造の薄膜サーマルヘッドの製造方法について
第５図および第６図に示す模式的り製造工程の流れに沿
って説明する。Next, a method for manufacturing a thin film thermal head with an upper mounting structure will be explained along the schematic manufacturing process flow shown in FIGS. 5 and 6.
先ず絶縁性基板！上の全面に抵抗膜２を付着形成する（
第５図（ａ）、第６図（ａ））。しかるのら、この抵抗
ＩＩＩ ２を帯状にエツチング形成するに４）５図（ｂ
）（ｃ） 、第６図（ｂ） （ｅ） ） ６そして、こ
の帯状の抵抗膜２を覆って前記基板１の全面に第１のメ
タルリード層３を形成する（第５は１（ｄ）、第（１１
９４１（ｄ））。次に前記抵抗膜２に対向する領域を除
いて前記第１のメタルリード層３上に第２のメタルリー
ド層４を形成するか（第５図（ｅ））、寸たは第１のメ
タルリード層３上の全域に第２のメタルリード層４を形
成する（第（１図（Ｃ））。これによって基板ｌ上に抵
抗膜２．！ａ’；１および第２のメタルリート°層３，
４からηる積層体が形成されることになる〇
しかるのち、上記積層体を抵抗膜２の帯状方向と直角な
方向に所定ピッチ、所定幅でストライプ状に１ＦＥＰ法
によりノ９ターニングする（第５図（ｆ）、第６図（ｆ
））。そして、第５図（ｆ）の如くノ９ターニングされ
た積層体に対して抵抗膜２の中央部を露出させるべく、
第１のメタルリート“層３を部分的にエツチング除去す
る（第５図（ｇ））。First, an insulating substrate! A resistive film 2 is deposited on the entire surface (
Fig. 5(a), Fig. 6(a)). However, in order to form this resistor III 2 into a band shape by etching, it is necessary to form the resistor III 2 into a band shape as shown in Fig. 4) 5 (b).
)(c), FIGS. 6(b)(e)) 6 Then, a first metal lead layer 3 is formed on the entire surface of the substrate 1, covering this band-shaped resistive film 2 (the fifth layer is 1(d)). ), No. (11)
941(d)). Next, a second metal lead layer 4 is formed on the first metal lead layer 3 except for the region facing the resistive film 2 (FIG. 5(e)), or A second metal lead layer 4 is formed over the entire area on the lead layer 3 (FIG. 1(C)).This forms a resistive film 2.!a';1 and a second metal lead layer on the substrate l. 3,
After that, the above-mentioned laminate is turned into stripes with a predetermined pitch and a predetermined width in a direction perpendicular to the band-shaped direction of the resistive film 2 by the 1FEP method. Figure 5 (f), Figure 6 (f)
)). Then, as shown in FIG. 5(f), in order to expose the central part of the resistive film 2 to the nine-turned laminated body,
The first metal layer 3 is partially etched away (FIG. 5(g)).
壕だ第６図（ｆ）に示す積層体にあっては、抵抗膜２上
に第１および第２のメタルリード
が積層されていることから、先ず第２のメタルリード層
４の抵抗膜２に対向する領域をエツチング除去しく第６
図（ｇ））、その後、これによって露出された第１のメ
タルリード層，？の中央音す分をエツチング除去して抵
抗膜２の中央部を露出させる（第６図（ｈ））。そして
、このような工程を経たのち、その上に保護膜５を形成
してサーマルヘッドが完成されろう
尚、この製作工程において、抵抗膜２としてはＴａ Ｓ
＋０２の如きＴａ−８１−０系，Ｃｒ−Ｓｔ−０系およ
びＮｌ −Ｃｒ−Ｓｌ系等のフッ硝酸をエツチング液と
してエツチング加工されるものが用いられる。寸だこの
とき第２のメタルリード層４としテ、上記エツチング液
に侵されるＡノやＣｕを用いても、第２のメタルリード
層４が抵抗膜２の形成領域を避けて設けられている為、
これによる悪影響を受ける虞れがない。従って第２のメ
タルリード層４として、従来のＡｕに代えて安価なＡノ
やＣｕ等を用いることが可能とケる。In the laminate shown in FIG. 6(f), since the first and second metal leads are stacked on the resistive film 2, first the resistive film 2 of the second metal lead layer 4 is stacked. 6. Remove the area opposite by etching.
Figure (g)), then the first metal lead layer exposed by this, ? The central part of the resistor film 2 is etched away to expose the central part of the resistive film 2 (FIG. 6(h)). After going through these steps, a protective film 5 is formed on top of the protective film 5 to complete the thermal head.In this manufacturing process, the resistive film 2 is made of TaS.
Used are Ta-81-0 series such as +02, Cr-St-0 series, and Nl-Cr-Sl series which are etched using fluoronitric acid as an etching solution. At this point, the second metal lead layer 4 is formed so as to avoid the region where the resistive film 2 is formed, even if A or Cu, which is eroded by the etching solution, is used. For,
There is no risk of any negative effects from this. Therefore, as the second metal lead layer 4, it is possible to use an inexpensive material such as A or Cu in place of the conventional Au.
ところで、上記の如き構造の薄膜サーマルヘッドの基板
上に、その駆動回路を実装する場合、次のようにすれば
よい。第７図（ａ）〜（ｄ）はその例を示すもので、第
７図＜−’Ｉ （ｂ）は第３図に示す構造のサーマルヘ
ッドに対する実装例を、また第７図（Ｃ） （ｄ）は第
４図に示す構造のサーマルヘッドにＸ；Ｊする実装例を
示している。即ち、第７図（ａ） （ｃ）に示すものに
あっては、第２のメタルリード層４がＡノ膜であること
から、■Ｃチ５１．プロのづ？ンディングパッドとの間
でＡノワイヤ、寸だばＡｕワイヤ７を用いてワイヤホゝ
ンディング接経：するように′１′ればよい。また第７
図（ｂ）に示すようにＩＣチップ６をはんだイ」け接続
する場合には、Ａノｌｌｙニー３ （第２のメタルリー
ド層４）上にはんだが直接付かないことから、上記ＡＡ
ＩＩｆｆＧ ｌにＴｉ１ｌ保８゜Ｃｏ膜９を順次積層
し、この上に前記ＩＣチップ６をはんだイ寸けするよう
にすｉｔば、にい。−また第７図（（１）に示すように
Ｃｒ膜上にＩＣチップ６′ｆＫ：はんだ付けする場合に
は、Ｃｊ［にはんだが直接付かないことからをよんだ用
のメタライセ゛−／ヨンとして前述したようにＴｉ膜８
、 Ｃｕ膜９をＣｒ膜上に＋ｔ：４１ＪＩｙ、するよ
うにすればよい。このようにす第１．げ、Ｐ＋’、 ２
のメタルリード層４としてＡ）膜を用いても その、駆
動回路であるＩＣチ、第６の実装に何ら不都合を招くこ
とがない。尚、図中１０に１はんだバンプ苓：示しでい
る。By the way, when mounting the drive circuit on the substrate of the thin film thermal head having the structure as described above, the following may be done. FIGS. 7(a) to (d) show examples, and FIG. 7(b) shows an example of mounting the thermal head having the structure shown in FIG. (d) shows an example of mounting the thermal head having the structure shown in FIG. That is, in the case shown in FIGS. 7(a) and 7(c), since the second metal lead layer 4 is an A film, the C-chi 51. Professional Nozu? It is only necessary to perform wire bonding using an A wire and an Au wire 7 between the bonding pad and the bonding pad. Also the 7th
When the IC chip 6 is connected by soldering as shown in FIG.
If the Ti1l and 8°Co films 9 are successively laminated on the IIffGl, and the IC chip 6 is soldered thereon. - Also, as shown in Fig. 7 ((1), when soldering the IC chip 6'fK: on the Cr film, it is necessary to solder the IC chip 6'fK: as shown in Fig. As mentioned above, the Ti film 8
The Cu film 9 may be placed on the Cr film at +t:41JIy. In this way, 1st. Ge, P+', 2
Even if the film A) is used as the metal lead layer 4 of the semiconductor device, there will be no inconvenience in mounting the IC chip, which is the drive circuit. In the figure, every 10 solder bumps are shown.
１膜上本発明に係る薄膜サーマル−＼ラドの第１４造と
その製造方法につき説明したが、こねによって得られる
効井（は次の通りであろう先ず、本発明によｈ−ば、第
２のメタルリード層４としてＡｕの如き繊金属を用いる
ことなく、Ａ／ −？ Ｃｕ Ｍの安価な金属を用いる
ことができ、辰Ｈ％（記録へ７ドλ・安価に実現するこ
とができる。ま７Ｆ往来のものと一゛４なり、抵抗膜２
を狭い９１５囲にだ０形（戊ずれ（′」“よいので、そ
の生産性を高めることができる。しかもこのとき、屋根
瓦状に基板をね重ね−Ｃ１【（抗＋１１；３２の形成を
行い得るので、生産能率の同一ヒを図り得る。壕ン琶抵
抗願２の工、チンダ液としてフッ硝酸を用いても、Ｍ記
Ａノ膜が上記工１．チンダ液に触れることがないので、
Ａノ膜がこれによって侵されることがないうちん的に（
Ｉｆ来のものにあっ−〔ｋ−↓、抵抗膜２との重なり部
分（ｔＣお・い−こＡ〕暎（第２のメタルリード層）が
侵され、消失してし斗う虞れがあり、実用上問題となっ
た。しかし、上述した、しりに第２のメタルリード層（
ＡＩ膜）が抵抗Ｈ！４２の形成領域ンリ・ら離り、て設
けられた構造なので、このような不具合が生じることが
ない Ｔ、ｆｉには本（’Ａ造によｉｚば、保商膜５を
極力狭い範囲にのみ設けることが可能となるので、その
生産性を高めることが可能となり、この場合でも屋根瓦
状に８１重ねて保護膜５のス・ぐツタリング処理ができ
るので、生産能率の向上か期待できる。−１／こ従来、
貴金属リード上に保ｈφ嗅を形成することができない為
、Ｃｒ膜等の活はメタル層を■デ成したのち保訓膜５を
形成しているが、このような不具合も生じない等の効果
が奏せられる。このように本発明によれば、ｆ・「々格
別の絶大なる利点効果が奏せられる。1 Film The 14th structure of the thin film thermal-\RAD according to the present invention and its manufacturing method have been explained. As the metal lead layer 4 of 2, it is possible to use an inexpensive metal such as A/-?CuM without using a woven metal such as Au, and it is possible to realize a low H% (recording temperature of 7 degrees λ) at low cost. .It is 1゛4 from the one on the 7th floor, and the resistive film is 2.
It is possible to increase the productivity by laying the board in the shape of a roof tile. Even if fluoro-nitric acid is used as the binder solution in step 2, the film in M-A will not come into contact with the binder solution in step 1 above. ,
As long as the A membrane is not affected by this (
If there is a possibility that the overlapping part with the resistive film 2 (tC O/I-CoA) (second metal lead layer) may be attacked and disappear. However, as mentioned above, the second metal lead layer (
AI film) has resistance H! Since the structure is located far away from the formation area of 42, such problems will not occur. In this case, the protective film 5 can be stacked like a roof tile and the protective film 5 can be stacked, so it can be expected that the production efficiency will be improved. -1/this conventionally,
Since it is not possible to form a protective film on the noble metal lead, the protective film 5 is formed after forming a metal layer such as a Cr film, but this method does not cause such problems. is played. As described above, according to the present invention, extremely great advantages and effects can be achieved.
尚、本発明Ｕ、上述（７た実施例にのみ限定されるもの
ではなく、その要旨を逸脱しない範囲で種々変形して実
施することができろととは勿論のことである。It goes without saying that the present invention is not limited to the above-mentioned (7) embodiments, and can be implemented with various modifications without departing from the gist thereof.
第１図および第２図はそれぞね、従来の薄ＩＩ（、Ｘ′
丈−マルヘッドの構造例を示す図、Ｑｌ’＋ ３図およ
び第４図はそれぞれ本発明の実施例に係る薄膜サーマル
”’７．ドの構造例を示す図、第５図（ａ）〜（ｇ）お
よび第６図（ａ）〜（ｈ）はそれぞれ本発明の実施例に
係る薄膜サーマルヘッドの製造工程の流れを模式的に示
す＋ｇＩ、第７図（ａ）〜（ｄ）はそれぞれツ′−マル
ヘッド駆動回路の実装例を示す図である。
Ｉ・・・絶縁性基板、２・・抵抗膜、３・・・第１のメ
タルリード層、４・・第２のメタルリード層、５・保護
膜、６ ・ＩＣチップ（駆動１町路）、？・・・Ａノ（
Ａ、ｕ ）ボ゛ンディングリー１’、８ ・−Ｔｉ膜、
９・Ｃｕ暎、ＩＯ・はんだゼイド。
出顧人代理人 弁理士 鈴 江 武 彦第５図
第６図1 and 2 respectively show the conventional Thin II (,
Figures Ql'+3 and 4 are diagrams showing structural examples of a thin film thermal head according to an embodiment of the present invention, respectively, and Figures 5(a) to ( g) and FIGS. 6(a) to (h), respectively, schematically show the flow of the manufacturing process of a thin film thermal head according to an embodiment of the present invention, and FIGS. 7(a) to (d) respectively, It is a diagram showing an example of mounting a '-multihead drive circuit. I... Insulating substrate, 2... Resistive film, 3... First metal lead layer, 4... Second metal lead layer, 5・Protective film, 6 ・IC chip (drive 1 town), ?...Aノ(
A, u) Bonding tree 1', 8 ・-Ti film,
9. Cu, IO, solder. Client agent Patent attorney Takehiko Suzue Figure 5
Figure 6
Claims (1)
膜を覆って前記絶縁基板上に第１のメタルリード層を形
成する工程と、この第１のメタルリード層上の前記抵抗
膜に対向する部分を除く領域に第２のメタルリード層を
形成する工程と、上記抵抗膜と第１および第２のメタノ
しリード層からなる積層体を前記抵抗膜の帯状方向と直
交する方向にストライブ状にエツチング除去する工程と
、前記第１のメタルソー１゛層の前言１２抵抗１１！！
に対向する領域の中央γ９＋＋ ４＋ ｆｆｉ工、・チ
ング除去する工程とを具備したことを！ｈ徴とする薄１
漠ザーマルへ、ドの製造方法。forming a strip-shaped resistive film on the insulating substrate; forming a first metal lead layer on the insulating substrate covering the resistive film; and forming the resistive film on the first metal lead layer. a step of forming a second metal lead layer in a region excluding a portion facing the resistive film; and a step of forming a laminate consisting of the resistive film and the first and second metal lead layers in a direction perpendicular to the strip direction of the resistive film. A step of etching and removing the first metal saw layer 12 in the form of stripes and removing the resistor 11! !
The central γ9++ 4+ ffi process of the area facing the area, and the process of removing the tingling! Thin 1 with h sign
The manufacturing method for the desert.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57171406A JPS5959475A (en) | 1982-09-30 | 1982-09-30 | Manufacture of thin film thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57171406A JPS5959475A (en) | 1982-09-30 | 1982-09-30 | Manufacture of thin film thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5959475A true JPS5959475A (en) | 1984-04-05 |
Family
ID=15922554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57171406A Pending JPS5959475A (en) | 1982-09-30 | 1982-09-30 | Manufacture of thin film thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5959475A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5637177A (en) * | 1979-09-03 | 1981-04-10 | Hitachi Ltd | Resistor for heat-sensitive recording head and manufacture thereof |
| JPS5689580A (en) * | 1979-12-20 | 1981-07-20 | Matsushita Electric Ind Co Ltd | Thin film type thermal head |
| JPS56157382A (en) * | 1980-05-09 | 1981-12-04 | Hitachi Ltd | Thermal head |
-
1982
- 1982-09-30 JP JP57171406A patent/JPS5959475A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5637177A (en) * | 1979-09-03 | 1981-04-10 | Hitachi Ltd | Resistor for heat-sensitive recording head and manufacture thereof |
| JPS5689580A (en) * | 1979-12-20 | 1981-07-20 | Matsushita Electric Ind Co Ltd | Thin film type thermal head |
| JPS56157382A (en) * | 1980-05-09 | 1981-12-04 | Hitachi Ltd | Thermal head |
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