JPS5957428A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS5957428A
JPS5957428A JP57168977A JP16897782A JPS5957428A JP S5957428 A JPS5957428 A JP S5957428A JP 57168977 A JP57168977 A JP 57168977A JP 16897782 A JP16897782 A JP 16897782A JP S5957428 A JPS5957428 A JP S5957428A
Authority
JP
Japan
Prior art keywords
projection
beams
exposure
rectangular
projected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57168977A
Other languages
Japanese (ja)
Inventor
Katsunobu Nakagawa
中川　勝信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP57168977A priority Critical patent/JPS5957428A/en
Publication of JPS5957428A publication Critical patent/JPS5957428A/en
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To maintain high speed property as an advantage of an electron beam lithography method using rectangular beams, and to enable exposure with high accuracy by projecting electron beams in the intensity of projection lower than that of rectangular beams in succession while they are superposed partially and exposing a material to be exposed. CONSTITUTION:Electron beams are scanned so as not to be partially superposed at the positions of projection of the rectangular beams 11, 12. When the length l1 and width l2 of a unit beam are 1mum and a feed-pitch P 0.5mum, a square of 1mum is adopted as the size of the unit beam. Electron beams are projected at the position 21 of projection, the position is displaced by 0.5mum, and electron beams are projected at the position 22 of projection. The position is displaced by 0.5mum, and electron beams are projected at the position 23 of projection. The process is repeated, and electron beams are projected up to 2n. Accordingly, a bundary line of beams projected at the positions 21 and 23 of projection is located at the central section of the position 23 of projection, and exposure at the bundary line is equalized through a projection at the position, thus preventing the generation of the swelling or constriction of the resist pattern.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は高速、高精度露光を可能にする電子線露光によ
るパターン形成法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a pattern forming method using electron beam exposure that enables high-speed, high-precision exposure.

従来例の構成とその問題点 半導体集積回路などを製作するだめの電子線露光による
パターン形成法では、一般に、電子ビームを細く集束し
た状態で、試料上に投射し、コンピュータからの指令に
基いて、この電子ビームを試料上で走査し所望する図形
を描いている。このパターン形成法によると非常に微細
な図形を高精度に描くことができる。しかしながら、集
積化する回路を構成する回路素子が多くなった場合、比
較的大面積である部分を露光するだめの塗りつぶし走査
に長時間を要することとなり、実用上の問題がある。こ
の問題を回避するために、電子ビームの走査過程におい
て矩形断面をもつ電子ビーム（以後、矩形ビームと称す
る）の寸法を所望する図形にあわせて可変させることに
よって、塗りつぶし走査に要する時間を大幅に短縮でき
るようにした方法が、近年提案された。Conventional configurations and their problems In the pattern forming method using electron beam exposure for manufacturing semiconductor integrated circuits, generally, a narrowly focused electron beam is projected onto the sample, and the pattern is formed based on instructions from a computer. , this electron beam is scanned over the sample to draw the desired figure. According to this pattern forming method, extremely fine figures can be drawn with high precision. However, when the number of circuit elements constituting a circuit to be integrated increases, it takes a long time to perform fill-in scanning to expose a relatively large area, which poses a practical problem. In order to avoid this problem, by changing the dimensions of the electron beam (hereinafter referred to as the rectangular beam) having a rectangular cross section during the electron beam scanning process, the time required for fill-in scanning can be significantly reduced. Recently, methods have been proposed to shorten the time.

この方法によると、高速露光が実現されるものの、図形
を形成したとき、矩形ビームのつなぎ図において、矩形
ビームどうしの重なり、まだはすきまが発生し易く、以
後の工程において形成されたレジストパターンに周期的
にふとり又はくびれが出現する。レジストパターンに精
度を要しない図形の場合は、このようなふとりまたはく
びれは問題とならないが、精度を要する図形の場合には
このふとり又はくびれによる誤差が無視できないものと
なる。Although high-speed exposure is achieved with this method, when a figure is formed, the rectangular beams tend to overlap each other in the connection diagram of the rectangular beams, and gaps tend to occur. Weight gain or constriction appears periodically. In the case of a figure that does not require accuracy in the resist pattern, such a rise or constriction does not pose a problem, but in the case of a figure that requires precision, the error due to this rise or constriction cannot be ignored.

昨今のように、集積度が著しく高まり、微細なパターン
を必要とする半導体集積回路では、上記のふとりまたは
くびれをなくすことが高速露光に加えて要求される。In recent years, in semiconductor integrated circuits where the degree of integration has increased significantly and requires fine patterns, in addition to high-speed exposure, it is also required to eliminate the above-mentioned fatness or constriction.

発明の目的 本発明は上記のごとき欠点に鑑みてなされたものであり
、矩形ビームを用いた電子線露光方法の利点である高速
性を維持して、さらに高精度の露光を可能にする電子線
露光のパターン形成法を提供することを目的とする。Purpose of the Invention The present invention has been made in view of the above-mentioned drawbacks, and provides an electron beam that maintains the high speed that is an advantage of the electron beam exposure method using a rectangular beam and enables even higher precision exposure. The purpose of the present invention is to provide a method for forming an exposure pattern.

発明の（１６成 本発明のパターン形成方法は、精度を要するレジストパ
ターンもしくは一部に精度を要するパターン部分をもつ
レジストパターンの前記のパターンの前記のパターン部
分の露光に際して、矩形ビームの寸法が一定であり、か
つ、精度を要しない図形部を描く際に用いる矩形ビーム
の投射強度より低い投射強度の電子ビーム（以後、単位
ビームと称する）を部分的に重ねながら順次投射して露
光する方法であり、この部分的な重ね合せ露光により適
正な露光量による微細なパターン形成がなされ、しかも
、矩形ビームを用いた露光によりもたらされていたふと
りあるいはくびれのないパターン形成もなされる。(16) The pattern forming method of the present invention is characterized in that the dimensions of the rectangular beam are constant when exposing the pattern portion of the resist pattern that requires precision or a resist pattern that partially has a pattern portion that requires precision. This is an exposure method in which electron beams (hereinafter referred to as unit beams) are projected sequentially while partially overlapping each other, and the projection intensity is lower than that of the rectangular beam used when drawing graphic parts that do not require precision. Through this partial overlapping exposure, a fine pattern can be formed with an appropriate amount of exposure, and a pattern can also be formed without the fat or constriction that is produced by exposure using a rectangular beam.

実施例の説明 第１図は、精度を要する図形部と精度を要しない図形部
とが混在するパターンの形成に、本発明の方法を適用し
た実施例を示す図である。図中、１は精度が問題とされ
ず、矩形ビームを重ねることなしに露光する図形部、２
は精度が要求され、矩形ビームの投射強度を低下させた
ｌ）ｉ位ビームを順次重ね合ぜるようにした本発明の方
法で露光する図形部である。なお、１１．１２・・・・
・・１ｎは矩形ビームの投射位置を示しそおシ、部分的
に重ならないように走査する。２’に、２２．・・・・
・・２ｎは単位ビームの投射位置を示しており、各々の
投射位置は部分的に重なっている。本実施例の場合、単
位ビームの長さ１１は例えば、１μｍ、幅１２は任意で
よいが、例えば、１μｍであシ、また、送りピッチｐｌ
ｄ、例えば０．６μｍである。従って単位ビームの寸法
は、１μｍの正方形である。露光する＋＋ＢＩ番は、ま
ず、１μｍ角の単位ビームを投射位置２１に投射し、次
にＯ０６μｍ位置をずらせて投射位置２２に投射する。DESCRIPTION OF THE EMBODIMENTS FIG. 1 is a diagram showing an embodiment in which the method of the present invention is applied to the formation of a pattern in which graphic parts that require precision and graphic parts that do not require precision coexist. In the figure, 1 is a figure part where accuracy is not an issue and is exposed without overlapping rectangular beams, 2
1) is a figure portion exposed by the method of the present invention in which accuracy is required and the projection intensity of the rectangular beam is lowered.l) i-position beams are sequentially superimposed. In addition, 11.12...
. . 1n indicates the projection position of the rectangular beam, which is scanned so as not to partially overlap. 2', 22.・・・・・・
...2n indicates the projection position of the unit beam, and each projection position partially overlaps. In the case of this embodiment, the length 11 of the unit beam is, for example, 1 μm, and the width 12 may be arbitrary, for example, 1 μm.
d, for example 0.6 μm. Therefore, the size of a unit beam is a 1 μm square. For the ++BI number to be exposed, first, a unit beam of 1 μm square is projected onto the projection position 21, and then shifted by 006 μm and projected onto the projection position 22.

更に０．６μｍ位置をずらせて投射位置２３に投射する
。以下同様にして２ｎまで投射する。このようにして露
光すると、投射位置２１ど２３の投射ビームの境目が、
投射位置２３の中心部に位置するところとなり、この位
置への投射で境目の露光が平均化することになり、レジ
ストパターンのふとりまたはくびれの発生が阻止される
。以下露光をくり返すことによって、任意の長さで幅が
１μｍの図形を得ることができる。Further, the position is shifted by 0.6 μm and projected to the projection position 23. Thereafter, projection is performed in the same manner up to 2n. When exposed in this way, the boundary between the projection beams at the projection positions 21 and 23 is
This is located at the center of the projection position 23, and projection to this position averages out the exposure at the border, thereby preventing the resist pattern from becoming thick or constricted. By repeating the exposure, a pattern with an arbitrary length and a width of 1 μm can be obtained.

一方、精度がそれほど要求されない図形部１の露光に際
しては、投射強度を弱める配慮を払われていない通常用
いる矩形ビームを用い、投射位置１１．１２，１３．１
ｎ−１、Ｉｎとｌｌｌ１￥次投射位置をシフトさせて投
射を行う。この露光によるときには、矩形ビームによる
露光部が隣接して配置された状態で図形部１が形成され
る。On the other hand, when exposing the graphic part 1 where high accuracy is not required, a normally used rectangular beam is used, which does not take into account weakening of the projection intensity, and the projection positions 11.12, 13.1 are used.
Projection is performed by shifting the n-1, In and lll1\next projection positions. When this exposure is performed, the graphic part 1 is formed in a state where the exposed parts by the rectangular beam are arranged adjacent to each other.

ところで、本発明の方法では、単位ビームの投射強度を
通常用いる矩形ビームの投射強度よりも弱めているが、
この配慮が払わないと、重ね合せ露光がなされるために
露光量が約２倍となってしまう。このだめ、電子ビーム
制御用コンピュータの入力データあるいけ制御プログラ
ムを設定し、その指示で単位ビームの投射強度が矩形ビ
ームの投射強度の約Ａになるよう制御する。By the way, in the method of the present invention, the projection intensity of the unit beam is made weaker than the projection intensity of the rectangular beam normally used.
If this consideration is not taken, the amount of exposure will approximately double due to overlapping exposure. In this case, a control program is set based on the input data of the electron beam control computer, and the projection intensity of the unit beam is controlled to be about A of the projection intensity of the rectangular beam according to the instructions.

第２図は、第１図で示しだ露光処理ののち、現像処理を
症すことによって得られたレジストパターンの状態を示
す図である。第２図において１０ｄ、精度を要しない図
形部のレジストパターンでああり、２ｏは精度を要する
図形部のレジストパターンである。ところで、精度を要
しない図形部１゜では、り、［コ形ビームによる投射位
置の境目、すなわら図形のつなぎ目において、凸部（ふ
とり）３あるいは凹部（くびれ）４が生じるばかりでな
く、図形のつなぎ目伺近にはレジストの干渉色の不均一
な部分５．６が出現する。一方、単位ビームを用いて爪
ね露光を行なうことにより形成した精度を要する図形部
２Ｑでは、レジストの干渉色も一様であり、形成された
図形のエツジに凹凸が発生することがない。通常、一連
の図形の中で、精度を要する図形部分が占める割合はわ
ずかであり、大半は精度を要しない図形部によって占め
られている。したがって、前者の図形部の形成にのみ本
発明の方法を適用するならば、塗りつぶし走査に要する
時間は、矩形ビームを用いて全ての図形を露光する露光
法による場合と大差がない。このため、矩形ビームを用
いる露光法の利点である高速露光を損うことなく、細く
集束した電子ビームで塗りつぶし走査を行うよシもはる
かに高速で露光するこ七ができる。また、全ての図形を
矩形ビームで露光する露光法では対処することが困難で
あった高い精度を要する図形部の高精度露光ができる。FIG. 2 is a diagram showing the state of a resist pattern obtained by performing a development process after the exposure process shown in FIG. In FIG. 2, 10d is a resist pattern for a graphic portion that does not require precision, and 2o is a resist pattern for a graphic portion that requires precision. By the way, in the figure part 1° which does not require precision, not only a convex part (fat) 3 or a concave part (constriction) 4 occurs at the boundary of the projection position by the U-shaped beam, that is, at the joint of the figures. A portion 5.6 of non-uniform interference color of the resist appears near the joint between the figures. On the other hand, in the graphic portion 2Q that requires precision and is formed by performing fingernail exposure using a unit beam, the interference color of the resist is uniform, and no unevenness occurs on the edges of the formed graphic. Normally, in a series of figures, the proportion of figure parts that require precision is small, and the majority is occupied by figure parts that do not require precision. Therefore, if the method of the present invention is applied only to the formation of the former figure part, the time required for fill-in scanning is not much different from the exposure method in which all the figures are exposed using a rectangular beam. For this reason, it is possible to perform exposure at a much higher speed than when performing fill-in scanning with a narrow, focused electron beam, without sacrificing the high-speed exposure that is an advantage of the exposure method using a rectangular beam. In addition, it is possible to perform high-precision exposure of graphic parts that require high precision, which is difficult to handle with an exposure method in which all the graphics are exposed with a rectangular beam.

さらに、本発明のパターン形成法では、単位ビームの幅
召、を狭くすることにより幅が１μ以下の直線を描くこ
ともできる。この場合、単位ビームの長さを幅より小さ
くする必要はない。本発明のバター／形成法によらず、
従来の矩形ビームのみを用いる方法によって、幅が１μ
以下の直線を描こうとすると、くびれまだはふとりのだ
め、図形に切断部ができること、あるいは周期的に太く
なることなどの不都合が生じる。寸だ矩形ビームにかえ
て円形の断面をもつ電子ビームを少しずつ重ねながら露
光することも考えられるが、この方法によると図形の端
が波状になシ精度のよい図形を得ることができない。本
発明の単位ビームを用いるパターン形成法では、このよ
うな不都合は全く生じない。Furthermore, in the pattern forming method of the present invention, by narrowing the width of the unit beam, a straight line with a width of 1 μm or less can be drawn. In this case, it is not necessary to make the length of the unit beam smaller than the width. Regardless of the butter/formation method of the present invention,
The width is 1μ by the conventional method using only rectangular beams.
If you try to draw the following straight line, you will experience inconveniences such as constrictions, gaps in the shape, cuts in the figure, or periodic thickening. It is conceivable to perform exposure by gradually overlapping electron beams with circular cross-sections instead of using rectangular beams, but with this method, the edges of the figure become wavy and it is not possible to obtain a highly accurate figure. In the pattern forming method using the unit beam of the present invention, such inconvenience does not occur at all.

以上、本発明について、精度を要する図形部とそれほど
の精度を要しない図形部とが混在する図形の形成を例示
して説明したのであるが、本発明のパターン形成法は、
全ての図形が高い精度を要するものである場合に適用で
きる。また、本発明のパターン形成法では、単位ビーム
として電子ビーｌ・を例として示しだが、電子ビームに
かえて、レーザビームあるいはイオンビーム等を用いる
こともできる。The present invention has been described above by exemplifying the formation of a figure in which a figure part requiring precision and a figure part not requiring such precision coexist, but the pattern forming method of the present invention
This method can be applied when all figures require high precision. Further, in the pattern forming method of the present invention, an electron beam is used as an example of the unit beam, but a laser beam, an ion beam, or the like may be used instead of the electron beam.

発明の効果 、ミ２ 本発明のパターン形成法は、図形形成速度については、
矩形ビ　ムを用いる従来の方法と遜色のない高速性が酵
保でき、しかも、この方法では得ることのできない高い
描画精度が得られるものであり、高い精度が要求される
図形を含むパターン形成の作業性ならびに形成されるパ
ターン品質を高める効果を奏する。Effects of the invention, M2 The pattern forming method of the present invention has the following features regarding the figure forming speed:
This method can maintain high speed comparable to the conventional method using rectangular beams, and also provides high drawing accuracy that cannot be obtained with this method. This has the effect of improving workability and quality of formed patterns.

めの原理図、第２図は本発明のパターン形成法によって
形成したレジストパターンの状態を示す図である。FIG. 2 is a diagram showing the state of a resist pattern formed by the pattern forming method of the present invention.

１・・・・矩形ビームを重ねることなしに露光する図形
部、２・・・・・単位ビームを重ねながら露光する図形
部、１１．１２．１３〜１ｎ−１，１ｎ・・・・・・矩
形ビームの投射位置、２１，２２．２３〜２ｎ−１，２
ｎ・・・・・・単位ビームの投射位置、１０・・・・・
・矩形ビームの投射で形成したレジストパターン部、２
ｏ・・・・・・単位ビームの投射で形成したレジストパ
ターン部、３・・・・・・矩形ビーム投射位置の境目に
生じるレジストパターンの凸部、４・・・・・矩形ビー
ム投射位置の境目に生じるレジストパターンの凹部、６
．７・・・・・レジストの干渉色の不均一な部分。1... Graphic part exposed without overlapping rectangular beams, 2... Graphic part exposed while overlapping unit beams, 11.12.13~1n-1, 1n... Projection position of rectangular beam, 21, 22.23 ~ 2n-1, 2
n...Projection position of unit beam, 10...
・Resist pattern part formed by projection of a rectangular beam, 2
o...Resist pattern portion formed by unit beam projection, 3...Protrusion of the resist pattern occurring at the boundary between rectangular beam projection positions, 4...Protrusion of the rectangular beam projection position Recesses in resist pattern that occur at boundaries, 6
．． 7... Part where the interference color of the resist is uneven.

Claims (3)

【特許請求の範囲】[Claims] （１）断面形状を矩形状となし、投射強度をレジスト露
光時の投射強度よシも低下させた単位ビームを、投射位
置が部分的に重なるよう順次シフトさせてレジスト上に
投射し、所定図形に対応するレジストパターンを形成す
ることを特徴とするパターン形成方法。(1) Unit beams with a rectangular cross-sectional shape and a projection intensity lower than the projection intensity during resist exposure are projected onto the resist by sequentially shifting the projection positions so that they partially overlap. A pattern forming method characterized by forming a resist pattern corresponding to. （２）所定図形が、全図形の一部であシ、かつ高い描画
精度を要する微細図形であることを特徴とする特許請求
の範囲第１項に記載のパターン形成方法。(2) The pattern forming method according to claim 1, wherein the predetermined figure is a part of the entire figure and is a minute figure that requires high drawing accuracy. （３）単位ビームが電子ビーム、レーザビームまたはイ
オンビームのいずれかであることを特徴とする特許請求
の範囲第１項に記載のパターン形成方法。(3) The pattern forming method according to claim 1, wherein the unit beam is an electron beam, a laser beam, or an ion beam.
JP57168977A 1982-09-27 1982-09-27 Forming method for pattern Pending JPS5957428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57168977A JPS5957428A (en) 1982-09-27 1982-09-27 Forming method for pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57168977A JPS5957428A (en) 1982-09-27 1982-09-27 Forming method for pattern

Publications (1)

Publication Number Publication Date
JPS5957428A true JPS5957428A (en) 1984-04-03

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JP57168977A Pending JPS5957428A (en) 1982-09-27 1982-09-27 Forming method for pattern

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JP (1) JPS5957428A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63196038A (en) * 1987-02-09 1988-08-15 Nec Corp Device and method of energy beam lithography

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112016A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Exposure of electron beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112016A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Exposure of electron beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63196038A (en) * 1987-02-09 1988-08-15 Nec Corp Device and method of energy beam lithography

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