JPS5956972A - Improvement in wettability with solder of soldering parts - Google Patents
Improvement in wettability with solder of soldering partsInfo
- Publication number
- JPS5956972A JPS5956972A JP16925982A JP16925982A JPS5956972A JP S5956972 A JPS5956972 A JP S5956972A JP 16925982 A JP16925982 A JP 16925982A JP 16925982 A JP16925982 A JP 16925982A JP S5956972 A JPS5956972 A JP S5956972A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- wettability
- stem
- heat sink
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
この発明はパワートランジスタ用ステム等の十ＬＩＪ（
Ｊけ部品の半田ぬれ性の改良方法に関する。[Detailed Description of the Invention] Technical Field This invention relates to a power transistor stem, etc.
This invention relates to a method for improving the solder wettability of J-type parts.
背景技術
カンケース型のパワートランジスタ等におけるステムに
は各種の構造２寸法のものがある。例えば第１図および
第２図はその代表的なものを示し、第１図は平面図であ
り、第２図は第１図のｎ−ｕ線に沿う断面図である。図
において１は略菱形状を呈する鉄製のステム基板で、長
手方向の両端部にンヤーシ等への取付孔２，２を治し、
中心から若干偏心した位置にリード線封着用の小径の透
孔３．３を有するとともに、ヒートシンク固着用の大径
の透孔４を治する。５，５は前記透孔３，３に充填され
たソーダライムガラス、ソーダバリウムガラス等のガラ
スで、このガラス５．５を介して、鉄・ニッケル合金等
よりなるリード閣６，６が、ステム基板１と電気的に絶
縁してかつ気密に封着されている。７は前記透孔４に嵌
合しかしめられたうえで気密にロウイｑけされた銅製の
ヒートンンクである○
上記のステムは一般に無電解ニッケルメッキが施された
上で、全体を加熱しておいて前記ヒートンンク７」二に
半田を供給し、溶融した半田を介してトランジスタペレ
ット等の素子を固着したのち、素子のエミッタ電極やベ
ース電極等の上面電極とリード線６，６との間をアルミ
ニウムや金等よりなる接続細心メで４文続し、最後に上
から鉄製のキャッゾを被膜で溶抗溶接等により固着制止
している。BACKGROUND OF THE INVENTION Stems in can case type power transistors and the like have various structures and two dimensions. For example, FIGS. 1 and 2 show typical examples thereof, with FIG. 1 being a plan view and FIG. 2 being a sectional view taken along line nu in FIG. 1. In the figure, 1 is a substantially diamond-shaped iron stem board, with mounting holes 2, 2 fixed at both ends in the longitudinal direction for attaching to a string, etc.
A small diameter through hole 3.3 for sealing the lead wire is provided at a position slightly eccentric from the center, and a large diameter through hole 4 for fixing the heat sink is fixed. 5, 5 is a glass such as soda lime glass or soda barium glass that is filled in the through holes 3, 3. Through this glass 5.5, leads 6, 6 made of iron-nickel alloy, etc. are connected to the stem. It is electrically insulated from the substrate 1 and hermetically sealed. 7 is a copper heat-tonk that is fitted into the through hole 4 and then hermetically waxed. The above stem is generally plated with electroless nickel and then heated as a whole. After supplying solder to the heat sink 7''2 and fixing an element such as a transistor pellet through the molten solder, an aluminum wire is connected between the upper surface electrode such as the emitter electrode or base electrode of the element and the lead wires 6, 6. There are four connections made of metal or gold, and finally, a coat of iron casso is applied from above to prevent it from sticking by hot welding.
ところで、無電解ニッケルメッキ層は経時変化によって
表面層に酸化被膜等が形成されやすいため、−Ｉ−記の
半日−Ｊ溶一時に半田のぬれ性が悪くなり、素子の固着
が不１月能ないし不完全になりやすいという間頌点があ
った。By the way, the electroless nickel plating layer tends to form an oxide film on the surface layer due to changes over time, so during the half-day melting process described in -I-, the wettability of the solder deteriorates, making it impossible to fix the element. There was an ode to the fact that it was easy to be incomplete.
発明の開示
そこで、この発明は上記パワートランジスタ用ステム等
の半田イ」け部品の半田ぬれ性を改善できる方法を提供
することを目的とする。DISCLOSURE OF THE INVENTION Therefore, it is an object of the present invention to provide a method that can improve the solder wettability of solder-ready components such as the power transistor stem.
この発明は無電解ニッケルメッキを施し、た半田イ・」
け７’ｇ（（品を、８０〜１００°Ｃに加熱した次亜リ
ン酸ソーダの５〜２５坏溶液中に３〜１０分間浸漬した
のち、水洗し乾燥することを特徴とするものである。This invention applies electroless nickel plating to solder.
7'g ((Items are characterized by being immersed for 3 to 10 minutes in a 5 to 25-g solution of sodium hypophosphite heated to 80 to 100°C, then washed with water and dried. .
すなわち、この発明によれば、半田付は部品にＪＩＪＬ
をれた無電解ニッケルメッキの表面に酸化被膜が形成さ
れていても、次亜リン酸ソーダの還元作用によって、酸
化被膜が還元除去されて、活性な問が露出するので、半
田ぬれ性が改善できるのである。That is, according to the present invention, soldering is performed on parts at JIJL.
Even if an oxide film is formed on the surface of the electroless nickel plating, the reducing action of sodium hypophosphite removes the oxide film and exposes active particles, improving solderability. It can be done.
発明を実施するだめの最良の形態
９０ ”ＣＶｒ：加熱した次亜リン酸ソーダの１５％溶
液中に、第１図および第２図に示すパワートランジスタ
用ステムを５分１１ｔｊ浸漬したのち、水洗し乾燥した
。このステムのヒートシンク７」二の半Ｈ」のぬれ広が
りはヒートシンク７の」二面積の９０％になった。BEST MODE FOR CARRYING OUT THE INVENTION 90 ``CVr: After immersing the power transistor stem shown in FIGS. 1 and 2 in a heated 15% solution of sodium hypophosphite for 5 minutes, washing it with water. The stem was dried. The wet spread of the heat sink 7" of this stem was 90% of the area of the heat sink 7.
これに対して、上記と同一ステムの未処理品のヒートシ
ンク７上の半田のぬれ広がりはヒートシンク７の土面積
の１０％程度であった。On the other hand, the solder spread on the heat sink 7 of an untreated product having the same stem as above was about 10% of the soil area of the heat sink 7.
以下にＡ次亜リン酸ソーダ溶液の濃度、温度および浸漬
時間と半田ぬれ性との関係を示す。The relationship between the concentration, temperature, and immersion time of sodium hypophosphite solution A and the solder wettability is shown below.
［］」 濃度々半１」」ぬれ性との関係濃度 、！
］′田ぬれ性良品
］ ％ ３／］ｏ 液 温； ８０
’Ｃ３％ ７／３ｏ 浸漬時間、５分間
５ ％ １．０／１゜
８ ダろ コ−○／１．０１０ 呪
１０／１０
コ−５％ １０／１゜
２０ 呪 １０／、。[ ] `` Concentration 1 and a half '' `` Relationship density with wettability,!
]' Good wettability product] % 3/]o Liquid temperature; 80
'C3% 7/3o Soaking time, 5 minutes 5% 1.0/1゜8 Daro Co○/1.010 Curse
10/10 Co-5% 10/1゜20 Curse 10/.
２５ ％ ］−〇／□。25% 】- ／□.
３０ ％ １ＯＺ１ｏ （半田浸漬前 次亜リン
酸処理後 表面変色）
すなわち、次ａ＋ｉ、ＩＪン酸ソーダ溶液の濃度は、５
％未満では還元作用が低すきるし、２５％を越えると還
元作用が激しくて、被処理部品の変色を生しるので、５
〜２５気の範囲内に限定される。30% 1OZ1o (Surface discoloration before solder immersion and after hypophosphorous acid treatment) In other words, the concentration of the hypophosphorous acid solution is 5
If it is less than 25%, the reducing effect will be low, and if it exceeds 25%, the reducing effect will be strong and cause discoloration of the parts to be treated.
Limited to a range of ~25 ki.
［２］ 液乙情と半田ぬれ性との関係温 度 半田
ぬれ性良品
５０°Ｃ２／１０ 濃 度；１０％６０”
Ｃ５／１゜ 浸漬時間；５分間７０℃ ９
／ｌ。[2] Relationship between liquid temperature and solderability Temperature Good solderability 50°C 2/10 Concentration: 10% 60"
C5/1゜ Immersion time: 70℃ for 5 minutes 9
/l.
８０°Ｃ１°／ １０ ９０℃ １０／ｌ。80°C1°/10 90℃ 10/l.
１００℃ １０／ １０
すなわち、溶液の加熱温度は、８０°Ｃ未満では還元作
用が低下り、、 １００″Ｃを越える温度にはできな
いので、８０〜１００°Ｃの範囲内に限定される。100°C 10/10 That is, the heating temperature of the solution is limited to a range of 80 to 100°C, since the reducing effect decreases below 80°C, and the temperature cannot exceed 100°C.
〔３コ 浸漬時間と半田ぬれ性との関係時 間 半
田ぬれ性良品
］−分間 ｌ／１０ 液 温； ｓｏ
°Ｃ２分間 ５／□。 濃 度；ｌＯ％
３分間 １０／ｌ。[3. Relationship between immersion time and solderability Time Good solderability] - Minutes l/10 Liquid temperature; so
°C for 2 minutes 5/□. Concentration; lO%
10/l for 3 minutes.
５分間 １０／、。5 minutes 10/.
８分間 １０／１゜ １０分間 １０／ ｌ。8 minutes 10/1゜ 10 minutes 10/l.
］−５分間 １０／ｌＯ（半田浸漬前 次亜リン酸
処理後 表面変色）
すなわち、浸漬時間は、２分間未満では効果が４ｊ＋１
実でなく、逆に」０分間を超えると被処理部品の茨色を
生じるσ）て゛、３〜ｌＯ分間に限定される。]-5 minutes 10/lO (before solder immersion, after hypophosphorous acid treatment, surface discoloration) In other words, if the immersion time is less than 2 minutes, the effect is 4j+1
On the contrary, if the treatment time exceeds 0 minutes, the parts to be treated will turn a thorny color. Therefore, the treatment time is limited to 3 to 10 minutes.
なお、この発明は上記実施例に示したパワートランジス
タ川ステムのみならず、他の構造のステム［も実施でき
るし、ステムのみならず他の半田イ・」け部品にも実施
できるものである。Note that the present invention can be applied not only to the power transistor stem shown in the above embodiment, but also to stems of other structures, and can be applied not only to the stem but also to other soldering parts.
第３図および第２図はこの発明の背景となるパワー１、
ランジスク用ステムの一例を示し、第１図は・＋ｉ而面
ズ、第２図は第１図のｌ−１１線に沿う断面図である。
１ ステム基板、 ５・・・・・ ガラス、６・・
・・・ リード線、７ 、、、、、、 ヒートシンク
。Figures 3 and 2 show power 1, which is the background of this invention.
An example of a stem for a run disk is shown, and FIG. 1 is a . 1 Stem board, 5...Glass, 6...
...Lead wire, 7,,,,, heat sink.
Claims (1)
、８０〜９０°Ｃに加熱した次亜リン酸ソーダの５〜２
５気の溶液中に３〜１ｏ分間浸漬したのち、水洗し、乾
燥することを特徴とする半田イ１け部品の半田ぬれ性改
良方法。For soldering with nickel plating (electroless on the surface), solder the parts with 5 to 2
A method for improving the solder wettability of solder parts, which comprises immersing them in a 5-gas solution for 3 to 10 minutes, washing with water, and drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16925982A JPS5956972A (en) | 1982-09-28 | 1982-09-28 | Improvement in wettability with solder of soldering parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16925982A JPS5956972A (en) | 1982-09-28 | 1982-09-28 | Improvement in wettability with solder of soldering parts |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5956972A true JPS5956972A (en) | 1984-04-02 |
Family
ID=15883185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16925982A Pending JPS5956972A (en) | 1982-09-28 | 1982-09-28 | Improvement in wettability with solder of soldering parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5956972A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150216056A1 (en) * | 2013-08-15 | 2015-07-30 | Hitachi Metals, Ltd. | Ceramic circuit substrate and its production method |
-
1982
- 1982-09-28 JP JP16925982A patent/JPS5956972A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150216056A1 (en) * | 2013-08-15 | 2015-07-30 | Hitachi Metals, Ltd. | Ceramic circuit substrate and its production method |
| US10057992B2 (en) * | 2013-08-15 | 2018-08-21 | Hitachi Metals, Ltd. | Ceramic circuit substrate and its production method |
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