JPS5956783A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5956783A JPS5956783A JP16693882A JP16693882A JPS5956783A JP S5956783 A JPS5956783 A JP S5956783A JP 16693882 A JP16693882 A JP 16693882A JP 16693882 A JP16693882 A JP 16693882A JP S5956783 A JPS5956783 A JP S5956783A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- active layer
- grown
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
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- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、化合物半導体を用いた新規な横モードの安定
した、かつ低しきい値のレーザ素子に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a novel laser device that uses a compound semiconductor and has a stable transverse mode and a low threshold.
従来例の調成とその問題点
半導体レーザの基本モード化は、光ファイ・く−西信（
ｔこおける広・；１１域、長距離伝送や低歪アナログ変
調等を可能とするためυ′こ不可欠のものである。Preparation of conventional examples and their problems The fundamental mode of semiconductor lasers was developed by optical fiber Ku-Nishi Shin (
This is indispensable in order to enable wide-band, 11-band, long-distance transmission and low-distortion analog modulation.
そのための発掘モートの制御は、晶初、光の１”ｔｉ失
とむだな再結合を最小にする特定頭載に光エネルギ及び
注入電流をとじ、込める、いわゆる屯ｌ１１（ストライ
プレーザて実現された。その後、各種のストライプレー
ザが開発され現在に至っているが、いずれも、それぞれ
の欠点を有し行だｔ上手ど両足なものである。たとえば
、電極ストライプレーザ等単に電流分布のみ閉じ込めた
場合にはレーザ光は主として利得分布によりストライプ
方向に導かれるが、この利得による導波路作用は不安定
であり、電流を増加してゆくと容易に高次横モート発振
を起し更には電流−光出力特性が歪む場合も多い。The control of the excavation mote for this purpose was first realized using a so-called tun l11 (stripe laser) that focuses and injects light energy and injected current into a specific head that minimizes 1"ti loss and wasteful recombination of light. Since then, various striped lasers have been developed and are still available today, but all of them have their own drawbacks. The laser light is mainly guided in the stripe direction by the gain distribution, but the waveguide effect due to this gain is unstable, and as the current increases, it easily causes higher-order transverse moat oscillation, and furthermore, the current-light output Characteristics are often distorted.
これは、これは、電極ストライプレーザが活性層の横方
向に対してキャリア及び光を閉じ込める構造となってい
ないためである。This is because the electrode stripe laser does not have a structure that confines carriers and light in the lateral direction of the active layer.
そこで」二記の欠点をおぎなう試ケとして第１図に示す
ような、埋め込みへテロ調造が作られた。Therefore, as an attempt to overcome the drawbacks mentioned above, an embedded heterostructure as shown in Figure 1 was created.
り下に例としてＩ ｎ Ｐ ／ Ｉ ｎＧａＡ ｓ Ｐ
半導体を挙げ説明する。第１図において１はｎ−Ｉ
ｎＰ基板、２Ｈｌｎ−Ｉ ｎ Ｐ第１クラッド層、３Ｉ
ｉＩｎＧａＡｓＰ 活性層（例えは１．３７１ｍ発光
波長和尚）、４はＰ−ＩｎＰ第２クラット層、５はＩｎ
ＧａＡｓＰ（例えば１．０５７ｚ発光波長和尚）キャッ
プ層である。このような４層（苦１告エピタキノ−）−
ルウエーハを、ポトリソグラノイの手段によってマスク
をとりつけ、化学エツチングによって逆メサ状に不用部
分をとりのぞき、第２のエピタキノヤル成長によって、
Ｐ−ＩｎＰ埋込み層６、ｎ−ＩｎＰ埋め込み層７を形成
する。Below is an example of I n P / I nGaA s P
Let me explain by citing semiconductors. In Figure 1, 1 is n-I
nP substrate, 2Hln-I nP first cladding layer, 3I
iInGaAsP active layer (e.g. 1.371m emission wavelength Osho), 4 is P-InP second crat layer, 5 is In
It is a GaAsP (eg, 1.057z emission wavelength Osho) cap layer. 4 layers like this (epitachine)
A mask is attached to the wafer by potolithography, an unnecessary part is removed in the shape of an inverted mesa by chemical etching, and a second epitaxial growth is performed.
A P-InP buried layer 6 and an n-InP buried layer 7 are formed.
このような構造においては、活性層は上下・左右共に、
バンドギャップが大きく屈折率の小さいＩｎＰ層でおお
われ、かつ、活性層幅Ｗ１が２μｍ前後と狭く、横方向
に光及びギヤリアのとじ込め効果があり、横モードの安
定な半導体レーザが得ら力、る。しかるに、上記埋め込
みへテロレーザでは、第１同目のエビクギ／−１−ル成
長において活性層かすでに成長され、これを選択的に、
化学エッチしたり、空気中にさらされる。さらに、この
１、・言出し／ζ活１′１層ｋＬ、第２の埋め込みエピ
タキノヤル成長の際、炉中て高温にさらされ、熱劣化の
危険が伴う。寸だ、電極での電気抵抗を極力減少さぜる
ため（で、第１図のように、Ｗｌ〈Ｖ′Ｊ２であり、エ
ツチングでこの形を形成する際オーバエッチず；？’Ｌ
４−Ｊ、活性層から上はなくなってし丑い、寸だ、エ
ツチングか足りなけれは、Ｗｌか充分狭くならないため
高次モードが発生ずることになる。以］二のよう（／′
Ｃ，Ｓ埋め込みへテロレーザは製造工゛程Ｖこおける不
安定さ、結晶成長過程での本質的な〜結晶性の低下、（
ｊｉｇ作歩留りの低下、等多くの問題点を含Ｘ７でいる
。In such a structure, the active layer is located on both the upper and lower sides and the left and right sides.
It is covered with an InP layer with a large bandgap and a small refractive index, and the active layer width W1 is as narrow as around 2 μm, which has the effect of confining light and gear in the lateral direction, making it possible to obtain a semiconductor laser with a stable transverse mode. Ru. However, in the above-mentioned buried hetero laser, the active layer has already been grown in the first layer growth, and this is selectively grown.
Chemically etched or exposed to air. Furthermore, during the growth of the second buried epitaxial layer kL and the second buried epitaxial layer, it is exposed to high temperature in a furnace, and there is a risk of thermal deterioration. In order to reduce the electrical resistance at the electrode as much as possible (as shown in Figure 1, Wl<V'J2, and when forming this shape by etching, do not over-etch; ?'L
4-J: The area above the active layer is almost completely gone.If etching is insufficient, Wl will not be narrow enough, and higher-order modes will occur. ] 2-like (/'
C, S-embedded hetero lasers suffer from instability during the manufacturing process, an essential decrease in crystallinity during the crystal growth process, and (
X7 has many problems such as a decrease in jig production yield.
発明の目的
この発明は、上記のような従来からの埋め込みへテロ［
１η造の欠点をなりシ、歩留りのよい、かつ横モードの
制御を可能とした新規なるＤＨレーザ構造の半導体レー
ザを提１比するものである。Purpose of the Invention The present invention is directed to the conventional implanted hetero [
This paper presents a semiconductor laser with a new DH laser structure that overcomes the drawbacks of the 1η structure, has a high yield, and enables control of the transverse mode.
発明の構成
かかる目的を達成するために、ｎ型結晶基板上に、ｎ型
、Ｐ型、ｎ型の３層のエヒリキ／ヤル層を設け、このエ
ピタキシャル基板上に少なくともｐ ）（ｊ１層土での
厚み以−にの深さに、逆ノサストライブ状に、化学エツ
チング等の手段によ−って、つ工−ハ全加丁し、こＩシ
ｔｉこ、第２の液相エビタキ／ヤル成長によって活性層
、Ｐ型とじ込め層及びＰ型ギャノグ層を成長さぜる。Structure of the Invention In order to achieve the above object, three epitaxial layers of n-type, p-type, and n-type are provided on an n-type crystal substrate. The hole is completely cut by means such as chemical etching in the form of reverse stripes to a depth equal to or greater than the thickness of the hole. An active layer, a P-type confinement layer, and a P-type Ganog layer are grown by the following steps.
実施例の説明
；’Ｑ ２図に示すとと（ｎ４１ｉす（００１）ＩｎＰ
基板１１上ＶＣｎ型ＩｎＰ層１２を厚さ４μｍ、Ｐ型Ｉ
ｎＰ層９を厚さ２ＩｔｍＸｎ型ＩｎＰ層１０を厚さ２７
１ｍと、順次、液相エピタキシャル成長させた。次にコ
ノ」二つナエビタキシャルウェーハの（１１０）方向に
１００μｍ間隔のストライプ状にＳｉＣ２全とりつけ、
１ＨＢｒ：１ＨＮＯ３：５Ｈ２０からなるエツチング液
を月１いて選択的Ｖこ逆メサ状に不用の部分をとりのぞ
いた。この様子を第３図に示す。上記エツチング液の使
用によって第３図における角度θは約６５°すなわちエ
ッチ面は（１１１）となる。Explanation of the embodiment;'Q As shown in Figure 2, (n41i(001)InP
The VCn-type InP layer 12 on the substrate 11 has a thickness of 4 μm and a P-type I
The nP layer 9 has a thickness of 2Itm.The n-type InP layer 10 has a thickness of 27.
Liquid phase epitaxial growth was carried out successively to 1 m. Next, all SiC2 was attached in stripes at 100 μm intervals in the (110) direction of two Naevitaxial wafers.
An etching solution consisting of 1HBr:1HNO3:5H20 was applied once a month to selectively remove unnecessary portions in the form of an inverted mesa. This situation is shown in FIG. By using the above etching solution, the angle θ in FIG. 3 becomes approximately 65°, that is, the etched surface becomes (111).
なお８ば５ＩＯ２酸化膜マスクである。ここで重要なの
（徒、活性層成長層、わずかＶこ未飽和溶液ＶこふオＬ
させることによって活性層の一部をとりのぞくことであ
る。すなわち、逆メサ状のウェー・・−Ｌに活性層を液
相エビタキ７ヤル成長すると、メザの平
周辺部で（ｄｌその他の中相な部分に比へきわめて成長
速度が速く、この」＝うな成長層を、未飽和溶液にふれ
さぜると、メザ周辺部の厚い部分のみを残し、他の部分
をとりのそくことがきわめて容易におこなえる。このよ
うにして形成された活性層は、従来のような薄板状のも
のから、三角柱状のものとなり２１回折によるビーム広
がり角を小さくするとともに、発光スポットをほぼ円形
とし、きわめて安定な措モードの発振を（ｒする／こめ
の構造となりうる。Note that the mask is an 8/5IO2 oxide film mask. What is important here is that the active layer growth layer is slightly saturated with unsaturated solution.
This is to remove a part of the active layer. In other words, when an active layer is grown in a liquid phase in an inverted mesa-shaped way...-L, the growth rate is extremely fast in the flat peripheral part of the mesa (compared to the middle phase parts such as dl). When the grown layer is exposed to an unsaturated solution, it is very easy to leave only the thick part around the meza and remove the other parts. It changes from a thin plate-like shape to a triangular prism-like shape, which reduces the beam spread angle due to 21 diffraction, makes the light emitting spot almost circular, and allows extremely stable oscillation in the mode.
このような活性層を、さらに、Ｐ型とじ込め層、Ｐ型キ
ャップ層を形成して、レーザ素子用エピタキンヤルウエ
ーハとする。このように加工されたウェーハを第２の液
相エピタキシャル成長に」＝って寸ずｎ型の活性層１５
をとりつける。この除、活性層１５は、第４図に示すご
とく平坦部Ａと角部Ｂとでは、厚みが著しく異なる。本
実癩例においてはＩｎ２．ｊ９に対してＡｓを４．６４
ａ Ｌｍ％、Ｇａを０．８３ａｔｍ％Ｐを０．１４ａｔ
ｍ％からなる溶液を用い成長開始温度６４０℃より０．
５℃／ｒｒｕｎの降品速度で３秒の成長を行ったところ
、第４図に示す平坦部Ａにおいては、厚みが約０．２７
層ｍであったが角部Ｂに本・ける最も厚い部分Ｈ１０，
６５７１ｍとなった。Such an active layer is further formed with a P-type confinement layer and a P-type cap layer to form an epitaxial wafer for a laser device. The wafer processed in this way is subjected to second liquid phase epitaxial growth to form an n-type active layer 15.
Attach. Apart from this, the thickness of the active layer 15 is significantly different between the flat part A and the corner part B, as shown in FIG. In this case of leprosy, In2. As for j9 4.64
a Lm%, Ga 0.83 atm% P 0.14 at
Using a solution consisting of m%, the growth starting temperature was 640°C.
When growth was performed for 3 seconds at a drop rate of 5°C/rrun, the thickness of the flat part A shown in Figure 4 was approximately 0.27.
The thickest part H10 of the layer m, which is located at the corner B,
It became 6571m.
厚みの比Ｂ／Ａば、第３図におけるエツチング角θが５
５０のとき最も大きかった。なお、この成長層の組成は
ＩｎＯ，７４Ｇａ０．２６ ＡＳＯ，５７ＰＯ，４３で
ある。If the thickness ratio B/A is used, then the etching angle θ in Fig. 3 is 5.
It was the biggest when I was 50. Note that the composition of this grown layer is InO, 74Ga0.26 ASO, 57PO, 43.
このような成長層を形成したあと、Ｉｎ２．９に対して
Ａｓを約２ａｔｍ％含む溶液に２秒間接触さぜ／こ。こ
の溶液に接触しメルトバックすることによって第Ｓ図に
示すように、活性層平坦部へはとり去られ角部Ｂにのみ
活性層１５′を残すことかできる。内かられかるように
、この活性層１５′の形状に［、はぼ三角形となってい
る。この部分の拡大図の例を第６図に示した。ａは約０
、８ ／Ｉ ｍ、ｂは約Ｏ０５７ｒｍである。活性層
をメルトバックによって順次Ｐ−ＩｎＰ層１３ 、Ｐ
Ｉ ｎ、ｏ 、 ８９ Ｇａ ｏ 、 １１ Ａ Ｓ
ｏ 、２３ＰＯ，７□層１４を成長させ第７図に示す
ようなウェーハをイ尋た。After forming such a growth layer, it was brought into contact with a solution containing about 2 atm % of As based on In2.9 for 2 seconds. By coming into contact with this solution and melting back, the active layer 15' can be removed from the flat portions, leaving only the active layer 15' at the corner B, as shown in FIG. As seen from within, the active layer 15' has a substantially triangular shape. An example of an enlarged view of this part is shown in FIG. a is about 0
, 8 /I m,b is approximately O057rm. The active layer is sequentially formed into P-InP layers 13 and P by melt-back.
I n, o, 89 Ga o, 11 A S
A 23PO, 7□ layer 14 was grown and a wafer as shown in FIG. 7 was prepared.
このウェー・・より５１０２酸化膜８をとりばずし第８
図のように成長層０ＩＩＩＶｃ Ａｕ−Ｚｎ ５％オー
ミック電極１６をとりつけ、基板ｆｌｉｌＫ Ａｕ−３
ｎ １０％オーミック電、極１７をとりつけた。このよ
うなウェートより共振器長約３００μｍ幅２００μｍの
チップにへき開によって切り出し、ＡｕメッキしたＣｕ
−・ノダーにＩｎによってマウントした。このような素
子のＡｕ−Ｚｎ側に」−９基板仙］を−とじて電流を流
すと常温に２いてしきい値２０ｍ Ａで、波長１．２９
μｍの発振を示した。２５ｍＡ以上においては、縦及び
措モード共に屯−となった。さらにビーム広がり角は、
通電方向に垂直、直角ともに約２００でありきわめて円
形に近いものであった。From this wafer, remove the 5102 oxide film 8.
As shown in the figure, a grown layer 0IIIVc Au-Zn 5% ohmic electrode 16 is attached, and the substrate flilK Au-3
n 10% ohmic electrode, pole 17 was attached. A chip with a resonator length of approximately 300 μm and a width of 200 μm was cut out from such a weight by cleavage, and a Cu plated with Au was cut out.
- Mounted on Nodder with In. When a current is passed through the Au-Zn side of such an element with a 9-substrate substrate connected to it, at room temperature, the threshold voltage is 20 mA, and the wavelength is 1.29.
It exhibited μm oscillation. At 25 mA or more, both vertical and negative modes became negative. Furthermore, the beam divergence angle is
Both perpendicular and perpendicular angles to the current direction were approximately 200, and the shape was extremely close to a circle.
なお上記実施例ではＩｎＰ、ＩｎＧａＡｓＰについて述
べたが、ＧａＡｓやＧａＡ４Ａｓ系でも可能である。In the above embodiments, InP and InGaAsP have been described, but GaAs and GaA4As may also be used.
発明の効果
以上述べたように、本発明の半導体レーザば、低しきい
値でかつモードが安定しており、ビームの広がり角が小
さいという効果がある。Effects of the Invention As described above, the semiconductor laser of the present invention has the advantage of having a low threshold value, a stable mode, and a small beam divergence angle.
第１図は従来の一実施例の埋め込みレーザの構成図、第
２図から第８図は本発明の一実施における°１′導体レ
ーザの構造と製造工程を示す図である。
８ ・・・−Ｓ ｉ ０２層、９−− Ｐ型ＩｎＰ層
、１０・−ｎ ７Ｖリ ＩｎＰ 層、 １ １−
ｎ ７９ｐ ＩｎＰ 基４反、 １２・・・＝
・ｎ型ＩｎＰ層、１３−川−Ｐ −Ｉ ｎＰ層、１４・
・Ｐ、Ｉｎ０．８９ ”Ｏ，Ｎ ＡＳＯ，２５Ｐ
Ｏ，７７層、１５−＝・・・ｎノ１りの活性層。
代理人の氏名 弁理士 中 尾 敏 男 はが１名第１
図
第３図
第４図
第５図
第６図FIG. 1 is a block diagram of a conventional buried laser according to an embodiment, and FIGS. 2 to 8 are diagrams showing the structure and manufacturing process of a 1' conductor laser according to an embodiment of the present invention. 8...-S i 02 layer, 9-- P type InP layer, 10.-n 7V Ri InP layer, 1 1-
n 79p InP group 4 anti, 12...=
・n-type InP layer, 13-Kawa-P-I nP layer, 14・
・P, In0.89 ”O, N ASO, 25P
O, 77 layers, 15-=... n no 1 active layer. Name of agent: Patent attorney Toshio Nakao (1st person)
Figure 3 Figure 4 Figure 5 Figure 6
Claims (2)
層を堆積し、該基板上の一部に、（１１１）面を構成し
、（Ｏ○り基板面と（１１１ン面となす角部に、活性層
を埋め込んだことを特徴とする半導体レーザ。(1) A first epitaxial growth layer is deposited on the (001) substrate surface, a (111) plane is formed on a part of the substrate, and a corner formed by the (O○ substrate surface and the (111) plane) is formed. A semiconductor laser characterized by having an active layer embedded therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16693882A JPS5956783A (en) | 1982-09-25 | 1982-09-25 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16693882A JPS5956783A (en) | 1982-09-25 | 1982-09-25 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5956783A true JPS5956783A (en) | 1984-04-02 |
| JPS6347356B2 JPS6347356B2 (en) | 1988-09-21 |
Family
ID=15840427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16693882A Granted JPS5956783A (en) | 1982-09-25 | 1982-09-25 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5956783A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6254987A (en) * | 1985-09-04 | 1987-03-10 | Hitachi Ltd | Semiconductor laser |
| JPH08307010A (en) * | 1996-04-22 | 1996-11-22 | Hitachi Ltd | Semiconductor laser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63214779A (en) * | 1987-03-03 | 1988-09-07 | Mita Ind Co Ltd | Developer supply mechanism |
-
1982
- 1982-09-25 JP JP16693882A patent/JPS5956783A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6254987A (en) * | 1985-09-04 | 1987-03-10 | Hitachi Ltd | Semiconductor laser |
| JPH08307010A (en) * | 1996-04-22 | 1996-11-22 | Hitachi Ltd | Semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6347356B2 (en) | 1988-09-21 |
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