JPS5953840A - Formation of fine pattern of water-soluble resist - Google Patents
Formation of fine pattern of water-soluble resistInfo
- Publication number
- JPS5953840A JPS5953840A JP16552382A JP16552382A JPS5953840A JP S5953840 A JPS5953840 A JP S5953840A JP 16552382 A JP16552382 A JP 16552382A JP 16552382 A JP16552382 A JP 16552382A JP S5953840 A JPS5953840 A JP S5953840A
- Authority
- JP
- Japan
- Prior art keywords
- water
- pattern
- soluble
- soluble resist
- alcohol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は水溶性レジストの微細パターンを形成するため
の方法に関する。さらに詳しくいえば、本発明は水溶性
レジストの微細パターンをうるばあいに水溶竪型の有機
溶剤を用いたリンス処理によりパターン膨潤をおさえた
きれのよい微細パターンの形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming fine patterns in water-soluble resist. More specifically, the present invention relates to a method of forming a fine pattern of a water-soluble resist by rinsing the fine pattern using a water-soluble vertical organic solvent to suppress pattern swelling.
従来カゼイン、ゼラチン、ポリ酢酸ビニル誘導体、セル
ロース誘導体、ポリアクリルアミドおよびその誘導体、
ポリビニルビ四リドンおよびその誘導体などの水溶性ポ
リマーがら構成される水溶性レジストのパターンは水溶
性レジスト塗［ｔ−形成したのち所定のパターンを照射
し、水現像または温水現像を行ない、風乾または適当な
温度にょるベーキング処理によってえていた。Conventionally, casein, gelatin, polyvinyl acetate derivatives, cellulose derivatives, polyacrylamide and its derivatives,
A pattern of a water-soluble resist composed of water-soluble polymers such as polyvinyl bitetraridone and its derivatives is formed by coating the water-soluble resist [t-], irradiating the prescribed pattern, developing with water or hot water, and drying with air or a suitable method. It was obtained by baking at different temperatures.
この種の水溶性レジストは光照射されることにより水に
対する溶解性が減少し、水に対して不溶となる。つまり
水溶性レジストは光照射部分と光来照射部分との水に対
する溶解性の差を利用してパターンを形成する。すなわ
ち光照射部分と光来照射部分との界面の水溶性レジスト
の溶解除去の程度かパターニング性、たとえはパターン
のきれの程度ひいては解像力に影響する。水溶性レジス
ト塗膜の水による現像は所定のパターンを光照射後、水
あるいは温水に浸漬することにより（１）水溶性レジス
ト塗膜の光来照射部分の吸水（２〕水溶性レジスト塗膜
の光来照射部分の溶解（３）水溶性レジス′ト塗膜の光
来照射部分の離脱および除去
というプロセスを経て行なわれる。When this type of water-soluble resist is irradiated with light, its solubility in water decreases and it becomes insoluble in water. In other words, the water-soluble resist forms a pattern by utilizing the difference in water solubility between the light-irradiated portion and the light-irradiated portion. That is, the degree of dissolution and removal of the water-soluble resist at the interface between the light irradiated part and the light irradiated part affects the patterning property, for example, the degree of pattern sharpness, and thus the resolution. Development of a water-soluble resist coating film with water is done by irradiating a predetermined pattern with light and then immersing it in water or warm water. Dissolution of the light-irradiated area (3) The process of separating and removing the light-irradiated area of the water-soluble resist coating film is carried out.
光照射部分の水溶性レジスト塗膜は光照射により水に不
溶になっているが、元来親水性を有するためある程度吸
水する。このため現像処理後の／＜ターンは予想される
ものより膜厚およびパターン幅が大きいものになる。と
くにパターン幅については下記の理由により膜厚以上に
吸水の影響をうける。すなわち、光照射部分と光来照射
部分の界面では水に対する溶解性の変化が大きい。その
ため必然的にこの部分には水に対する溶解性の大きい水
溶性レジストと光照射により水に対して不溶性になった
水溶性レジストとの間の溶解性の水溶性レジストが生じ
、溶解しきらない水溶性レジストが残りやすい。この部
分の水溶性レジストはそれ自身が充分不溶性になってお
らず、また親水性であるため他の不溶性部分と比較して
多量の水を含む。その結果パターン断面は第２図に示す
ように膜厚（ｄよ）が第１図（こ示す水現像の前の膜厚
（ｄｏ）と比較してやや厚＜（ｄ工＞ ａ□ ） 、第
２図に示すパターン幅（町）が第１図に示すパターンＩ
ｉｉ！＋１（Ｗｏ）と比較して大きい（Ｗ工〉Ｗｏ）も
のとなる。当然パターンの肩も丸みをおびる。したがっ
て水溶性レジスト塗膜のパターニングを単に水現像また
は温水現像のみで行なったばあい、パターンのきれの好
ましくない膨潤したものかえられ、解像力の優れたきれ
のよいパターンをうろことが困難であつた。Although the water-soluble resist coating film in the light-irradiated area becomes insoluble in water due to the light-irradiation, it absorbs water to some extent because it is originally hydrophilic. Therefore, after the development process, the film thickness and pattern width of the /< turns are larger than expected. In particular, the pattern width is affected by water absorption more than the film thickness for the following reasons. That is, the solubility in water changes greatly at the interface between the light-irradiated portion and the light-irradiated portion. Therefore, a water-soluble resist that is soluble in water is inevitably created in this area between the water-soluble resist that has a high solubility in water and the water-soluble resist that has become insoluble in water due to light irradiation, and the water-soluble resist that is not completely dissolved. Resistance tends to remain. The water-soluble resist in this part itself is not sufficiently insoluble, and since it is hydrophilic, it contains a larger amount of water than other insoluble parts. As a result, the cross section of the pattern has a film thickness (d) as shown in Fig. 2, which is slightly thicker than the film thickness (do) before water development shown in Fig. 1. The pattern width (town) shown in Figure 2 is the pattern I shown in Figure 1.
ii! It is larger (W>Wo) compared to +1 (Wo). Naturally, the shoulders of the pattern are also rounded. Therefore, if patterning of a water-soluble resist coating film was carried out simply by water development or hot water development, the pattern would be replaced by an undesirable swollen pattern, and it would be difficult to trace a clear pattern with excellent resolution. .
本発明者らは前記の従来法の欠点を改善するため鋭意検
討した結果、本発明に到達した。The present inventors have made extensive studies to improve the drawbacks of the conventional methods described above, and as a result, have arrived at the present invention.
本発明は基板上に水溶性レジスト塗膜を形成する工程、
該塗膜に所定のパターンを光照射し、水を用いて現像し
所定のパターンの塗膜をうる工程、前記塗膜を水溶竪型
の有機溶剤を用いてリンスする工程よりなることを特徴
とする水溶性レジストの微細パターン形成方法に関する
。The present invention includes a step of forming a water-soluble resist coating film on a substrate;
It is characterized by comprising the steps of: irradiating the coating film with light in a predetermined pattern and developing it with water to obtain a coating film with a predetermined pattern; and rinsing the coating film using a water-soluble vertical organic solvent. The present invention relates to a method for forming a fine pattern using a water-soluble resist.
本発明における水溶性レジストのパターンを製造するた
めに使用される水溶性レジストとしてはカゼイン、ゼラ
チン、ポリ酢酸ビニル誘導体、ポリビニルアルコールお
よびその誘導体、ポリアクリルアミドおよびその誘導体
、ポリビニルピロリドンおよびその誘導体、セルロース
誘導体などを基材とするものがある。これらΩ基材は単
独または２種以上の混合物でも同様の効果をうろことが
できる。通常の方法により感光性を有する化合物などを
混合し、または感光性を有する化合物を反応させるなど
して水溶性レジスト溶液を作製する。Examples of water-soluble resists used to produce the water-soluble resist pattern in the present invention include casein, gelatin, polyvinyl acetate derivatives, polyvinyl alcohol and its derivatives, polyacrylamide and its derivatives, polyvinylpyrrolidone and its derivatives, and cellulose derivatives. There are some that are based on These Ω base materials can be used alone or in combination of two or more to achieve the same effect. A water-soluble resist solution is prepared by mixing or reacting a photosensitive compound with a conventional method.
えられた水浴性レジスト溶液をスピン塗布など通常の方
法によりシリコンウェハ、ステンレス板、アルミニウム
板または銅板などの一般に水溶性レジストのパターン形
成に用いられる基板に塗布し、水溶性レジスト塗膜を形
成する。The resulting water-bath resist solution is applied to a substrate generally used for patterning water-soluble resists, such as a silicon wafer, stainless steel plate, aluminum plate, or copper plate, by a conventional method such as spin coating, to form a water-soluble resist coating film. .
該塗膜にルず１高圧水銀灯などを用いて通常の方法によ
りパターンを光照射する。本発明によりえられるパター
ン・リイズはサブミクロン領域以上１００μｍ以下の・
リイズのパターンであればよいが、好ましくは１〜２０
μｍ程度である。The pattern is irradiated onto the coating film by a conventional method using a Luzu 1 high-pressure mercury lamp or the like. The pattern size obtained by the present invention is from submicron region to 100 μm or less.
It may be a pattern of 1 to 20, but preferably 1 to 20
It is about μm.
本発明に用いる現像処理およびリンス処理は際漬浸法、
スプレー法、超音波照射漬浸法、水バブル漬浸法、スピ
ンスプレー法またはスピン法などの公知の現像方法また
はリンス方法企用いてもよく、またこれらの方法を組合
せて行なってもよい。The development treatment and rinsing treatment used in the present invention include a dipping method,
Known developing or rinsing methods such as a spray method, an ultrasonic irradiation immersion method, a water bubble immersion method, a spin spray method, or a spin method may be used, or a combination of these methods may be used.
処理方法にあわせて処理時間をきめればよい。The processing time can be determined according to the processing method.
水を用いた現像によりえられた塗膜を水浴竪型の有機溶
剤を用いてリンスし、塗膜に含有されている水分を除去
し、パターン膨潤をおさえたきれ醇よい微細パターンを
形成する。The coating film obtained by development using water is rinsed using an organic solvent in a vertical water bath to remove water contained in the coating film and form a rich fine pattern with suppressed pattern swelling.
本発明における水溶竪型の有機溶剤としてはメチルアル
コール、エチルアルコール、プロピルアルコール、ブチ
ルアルコールなどの低級脂肪族アルコール、アセトン、
メチルエチルケトンなどのケトン類、メチルエーテル、
エチルエーテルなどのエーテル類のうち少なくとも１種
類を用いる。Examples of water-soluble vertical organic solvents used in the present invention include lower aliphatic alcohols such as methyl alcohol, ethyl alcohol, propyl alcohol, and butyl alcohol, acetone,
Ketones such as methyl ethyl ketone, methyl ether,
At least one type of ether such as ethyl ether is used.
これらの有機溶剤に必要な性質としては水に溶解し、レ
ジスト膜に残っている水分を吸着または水分と置換され
やすいことがあげられる。本発明はとくに水現像または
温水現像中に生じた光照射により不溶性になった水溶性
レジストの膨潤を軽減することを意図しているため、使
用される有機溶剤は単独で用いてもよいし、また２種以
上組合せて用いてもよい。また必要により現像、リンス
処理後適当な温度でベーキング処理してもよい。The necessary properties of these organic solvents include being soluble in water and easily adsorbing or replacing moisture remaining in the resist film. Since the present invention is particularly intended to reduce swelling of a water-soluble resist that has become insoluble due to light irradiation during water development or hot water development, the organic solvent used may be used alone, or Also, two or more types may be used in combination. Further, if necessary, baking treatment may be performed at an appropriate temperature after development and rinsing treatment.
本発明によれば従来の写真製版技術をそのまま用いてわ
ずが一工程増加させるたけで著しく改善された水溶性レ
ジストの微細パターンをうろことができる。また本発明
によってえられる水溶性レジストのパターンは安定性が
よく、品質管理の点で優れた特徴を有している。他の効
果としては水溶性レジストのパターン形成後にあるエツ
チングまたはカラーフィルター製造プロセスにみられる
染色工程など他のプロセスに何ら悪影響を与えないこと
などがあげられる。もちろん従来の写真製版技術の設備
はそのまま利用できるという特徴を有する。According to the present invention, a significantly improved fine pattern of water-soluble resist can be created by using conventional photolithography technology as is and adding only one step. Furthermore, the water-soluble resist pattern obtained by the present invention has good stability and has excellent characteristics in terms of quality control. Another advantage is that it does not have any adverse effect on other processes such as etching after pattern formation of a water-soluble resist or dyeing process seen in the color filter manufacturing process. Of course, it has the feature that conventional photolithography equipment can be used as is.
つぎに実施例および比較例をあげて本発明の詳細な説明
する。Next, the present invention will be explained in detail with reference to Examples and Comparative Examples.
実施例１
濃度１５％（重量％、以下同様）のゼラチン水溶液を６
ＣＪｍｌと１Ａｔｘ１ｏ％の取りロム酸アンモニウム水
溶液を２ 、５ ｒｎｌとを混合して感光液を作製した
。Example 1 A gelatin aqueous solution with a concentration of 15% (weight %, hereinafter the same) was added to 6
A photosensitive solution was prepared by mixing CJml and 2.5 rnl of a 10% ammonium ammonium romate solution.
その感光液を熱酸化膜が約５ｏｏｏ Ｘ形成されたシリ
コンウェハ」二にスピン塗布したのち６００ｏＸ ３０
分間チッ素雰囲気中でベーキングし、所定のフォトマス
クを介して２５０Ｗの超高圧水銀灯で約１分間光照射し
た。ついで室温にて約１５秒間純水中に浸漬して現像処
理を行なったのち直ちに室温のイソプｏ ヒル、７ ）
Ｌｔ フール中に約２０秒浸漬し、リンス処理を行ない
、そののち乾燥チッ素ガスにて吹付乾燥させて所望の水
溶性レジストのパターンをえた。The photosensitive solution was spin-coated onto a silicon wafer with a thermal oxide film of about 500 x 30
It was baked in a nitrogen atmosphere for 1 minute, and then irradiated with light for about 1 minute using a 250 W ultra-high pressure mercury lamp through a predetermined photomask. The film was then immersed in pure water for about 15 seconds at room temperature for development, and immediately after that, the film was immersed in pure water at room temperature.
It was immersed in Lt-fool for about 20 seconds to perform a rinsing treatment, and then was spray-dried with dry nitrogen gas to obtain a desired water-soluble resist pattern.
えられたパターンの膜厚は約１．０μｍであった。The film thickness of the pattern obtained was approximately 1.0 μm.
えられたパターンを第４図に示す。The resulting pattern is shown in Figure 4.
第４図から水溶性レジストのパターンのきれが良好、す
なわち２μｍのラインパターンを精度よく形成している
ことがわかる。It can be seen from FIG. 4 that the pattern of the water-soluble resist is well defined, that is, a 2 μm line pattern is formed with high accuracy.
なお第４図はパターンサイズが２０．１５．１０．８．
６．５．４．６および２μｍで、残しパターンによるも
のである。In addition, in FIG. 4, the pattern size is 20.15.10.8.
6.5.4.6 and 2 μm, due to the remaining pattern.
実施例２
濃度１４％のカゼイン水溶液を約５０ｍ１と濃度２０％
の重クロム酸アンモニウム水溶液を２．５ｍｌとを混合
して感光液を作製した。この感光液を熱酸化膜が約５０
０ＯＸ形成されたシリコンウェハ上にスピン塗布したの
ち７０°０×１０分間チッ素雰囲気中でベーキングし、
所定のフォトマスクを密着させ２５０Ｗの超高圧水銀灯
で約２０秒間照射した。ついで室温にて約１５秒間純水
中に浸漬し現像処理を行なったのち直ちに室温のメチル
エチルケトン中に約６０秒間浸漬し、リンス処理を行な
い、そののち乾燥チッ素ガスにて吹付乾燥させて所望の
水溶性レジストパターンをえた。えられたパターンの膜
厚は約１．０μｍであった。Example 2 Approximately 50 ml of casein aqueous solution with a concentration of 14% and a concentration of 20%
A photosensitive solution was prepared by mixing 2.5 ml of ammonium dichromate aqueous solution. A thermal oxide film of about 50% is applied to this photosensitive liquid.
After spin coating on a silicon wafer formed with 0OX, baking in a nitrogen atmosphere at 70°0x10 minutes,
A predetermined photomask was placed in close contact and irradiation was performed for about 20 seconds with a 250 W ultra-high pressure mercury lamp. Next, it was immersed in pure water for about 15 seconds at room temperature for development, then immediately immersed in methyl ethyl ketone at room temperature for about 60 seconds for rinsing, and then spray-dried with dry nitrogen gas to obtain the desired result. A water-soluble resist pattern was obtained. The film thickness of the pattern obtained was approximately 1.0 μm.
えられたパターンはコーナーのきれのよい膨潤のない締
ったきれのよいものであり、２μｍのラインパターンが
精度よく形成できることを確認した。The resulting pattern had sharp corners and no swelling, and it was confirmed that a 2 μm line pattern could be formed with high precision.
比較例１
実施例１と同様にして感光液を作製し、約５００ＯＡの
熱酸化膜を有するシリコンウェハ上にスピン塗布したの
ち６０°０×６０分間チッ素雰囲気中でベーキングし、
所定の７オトマスクを介して２５０Ｗの超高圧水銀灯で
約１分間露光した。ついで室温にて約１５秒間純水中に
浸漬し現像処理を行なった。えられたパターンの膜厚は
約１．０μｍであった。Comparative Example 1 A photosensitive solution was prepared in the same manner as in Example 1, spin-coated onto a silicon wafer having a thermal oxide film of about 500 OA, and then baked in a nitrogen atmosphere at 60 degrees for 60 minutes.
It was exposed for about 1 minute to a 250 W ultra-high pressure mercury lamp through a predetermined 7-oto-mask. The film was then immersed in pure water for about 15 seconds at room temperature for development. The film thickness of the pattern obtained was approximately 1.0 μm.
えられたパターンを第５図に示す。The resulting pattern is shown in FIG.
第５図から水溶性レジストのパターンのきれが好ましく
ない膨潤したものかえられ、解像力の優れたきれの良好
なパターンをうろことが困難であることがわかる。It can be seen from FIG. 5 that the pattern of the water-soluble resist has undesirably swollen patterns, and it is difficult to trace a well-defined pattern with excellent resolution.
また純水中に浸漬し、現像処理を行なったのち約１００
８０で熱処理を施してもえられるパターン形状に変化は
なかった。In addition, after being immersed in pure water and subjected to development processing, approximately 100%
There was no change in the pattern shape obtained by heat treatment at 80°C.
なお第５図はパターンサイズが第４図のばあいと同一で
、残しパターンによるものである。Note that the pattern size in FIG. 5 is the same as that in FIG. 4, and is based on the remaining pattern.
前記の実施例および比較例で説明したように、水溶性レ
ジスト塗膜にパターンを照射し、水を用いた現像後に有
機溶剤を用いてリンス処理するはあいとしないばおいて
水溶性レジストのパターニング性が著しく異なり、リン
ス処理するとバターニング性が著しく向上すること、す
なわちリンス処理が有効であることを確認した。As explained in the Examples and Comparative Examples above, patterning of the water-soluble resist can be accomplished by irradiating a pattern onto the water-soluble resist coating film, developing it with water, and then rinsing it with an organic solvent. It was confirmed that the buttering properties were significantly different and that the buttering properties were significantly improved by rinsing, that is, rinsing was effective.
以上本発明を好ましい実施例にもとづいて説明したが、
本発明はかかる実施例のみに限定されるものではなく、
本発明の思想を逸脱しない限り種々の変更や修正が可能
である。Although the present invention has been described above based on preferred embodiments,
The present invention is not limited only to such examples,
Various changes and modifications can be made without departing from the spirit of the invention.
第１図は光照射後の水溶性レジスト塗膜の断面図、第２
図は第１図に示す光照射後の水溶性レジスト塗膜を水を
用いて現像したのちの断面図、第６図は第２図に示す水
溶性レジスト塗膜をリンス処理したのちの断面図、第４
図は本発明による水溶性レジストのパターン形成例、第
５図は従来法による水溶性レジストのパターン形成例を
示す。
（図面の主要符号）
（１）：光照射部の水溶性レジスト塗膜（２）：光来照
射部の水溶性レジスト塗膜（３）二基 板
（４）：パターンの肩
代理人 葛 野 信 −（ほか１名）Figure 1 is a cross-sectional view of the water-soluble resist coating after light irradiation, Figure 2
The figure is a cross-sectional view of the water-soluble resist coating shown in Figure 1 after being developed with water after irradiation with light, and Figure 6 is a cross-sectional view of the water-soluble resist coating shown in Figure 2 after being rinsed. , 4th
The figure shows an example of pattern formation of a water-soluble resist according to the present invention, and FIG. 5 shows an example of pattern formation of a water-soluble resist according to a conventional method. (Main symbols in the drawing) (1): Water-soluble resist coating on the light-irradiated area (2): Water-soluble resist coating on the light-irradiated area (3) Two substrates (4): Shoulder agent of the pattern Kuzuno Shin - (1 other person)
Claims (5)
塗膜に所定のパターンを光照射し、水を用いて現像し所
定のパターンの塗膜をうる工程、前記塗膜を水溶竪型の
有機溶剤を用いてリンスする工程よりなることを特徴と
する水溶性レジストの微細パターン形成方法。(1) A process of forming a water-soluble resist coating film on a cutting board, a process of irradiating the coating film with light in a predetermined pattern and developing it using water to obtain a coating film with a predetermined pattern, and a process of forming a water-soluble resist coating film on the cutting board. A method for forming a fine pattern on a water-soluble resist, comprising a step of rinsing using a vertical organic solvent.
、ケトン類、エーテル類のうち少なくとも１種を用いる
ことを特徴とする特許請求の範囲第（１）項記載の方法
。(2) The method according to claim (1), characterized in that at least one of lower aliphatic alcohols, ketones, and ethers is used as the water-soluble vertical organic solvent.
コールがメチルアルコール、エチルアルコール、プロピ
ルアルコールまたはブチルアルコールである特許請求の
範囲第（１）項または第（２）項記載の方法。(3) The method according to claim (1) or (2), wherein the lower aliphatic alcohol used as the water-soluble vertical organic solvent is methyl alcohol, ethyl alcohol, propyl alcohol, or butyl alcohol.
トンまたはメチルエチルケトンである特許請求の範囲第
（０項または第（２）項記載の方法。(4) The method according to claim 0 or (2), wherein the ketone used as the water-soluble vertical organic solvent is acetone or methyl ethyl ketone.
チルエーテルまたはエチルエーテルである特許請求の範
囲第（０項または第（２）項記載の方法。(5) The method according to claim 0 or (2), wherein the ether used as the organic solvent for the vertical water bath is methyl ether or ethyl ether.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16552382A JPS5953840A (en) | 1982-09-20 | 1982-09-20 | Formation of fine pattern of water-soluble resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16552382A JPS5953840A (en) | 1982-09-20 | 1982-09-20 | Formation of fine pattern of water-soluble resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5953840A true JPS5953840A (en) | 1984-03-28 |
Family
ID=15814002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16552382A Pending JPS5953840A (en) | 1982-09-20 | 1982-09-20 | Formation of fine pattern of water-soluble resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5953840A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4853680A (en) * | 1971-11-06 | 1973-07-27 | ||
| JPS5164918A (en) * | 1974-12-02 | 1976-06-04 | Mitsubishi Chem Ind | JUKUROMUSANENKEIKANKOSONO SEIZOHO |
| JPS54141128A (en) * | 1978-04-25 | 1979-11-02 | Fuji Photo Film Co Ltd | Processing method of picture image forming material |
| JPS56153340A (en) * | 1980-04-04 | 1981-11-27 | Hughes Aircraft Co | Method of forming photosensitive layer on plastic substrate |
-
1982
- 1982-09-20 JP JP16552382A patent/JPS5953840A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4853680A (en) * | 1971-11-06 | 1973-07-27 | ||
| JPS5164918A (en) * | 1974-12-02 | 1976-06-04 | Mitsubishi Chem Ind | JUKUROMUSANENKEIKANKOSONO SEIZOHO |
| JPS54141128A (en) * | 1978-04-25 | 1979-11-02 | Fuji Photo Film Co Ltd | Processing method of picture image forming material |
| JPS56153340A (en) * | 1980-04-04 | 1981-11-27 | Hughes Aircraft Co | Method of forming photosensitive layer on plastic substrate |
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