JPS5950579A - Semiconductor optical position detector - Google Patents
Semiconductor optical position detectorInfo
- Publication number
- JPS5950579A JPS5950579A JP57161470A JP16147082A JPS5950579A JP S5950579 A JPS5950579 A JP S5950579A JP 57161470 A JP57161470 A JP 57161470A JP 16147082 A JP16147082 A JP 16147082A JP S5950579 A JPS5950579 A JP S5950579A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive film
- type amorphous
- transparent conductive
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 230000003287 optical effect Effects 0.000 title description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 239000000969 carrier Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 230000004304 visual acuity Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- MGTYKZBWBMDCNO-UHFFFAOYSA-N [In].O=S Chemical compound [In].O=S MGTYKZBWBMDCNO-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
Abstract
Description
【発明の詳細な説明】 本発明は、半導体装置検出器に関する。[Detailed description of the invention] The present invention relates to a semiconductor device detector.
近年、画像の走査を行なわないで光学的に被測定物体の
位置を検出する半導体装置検出器が実用されている。In recent years, semiconductor device detectors have been put into practical use that optically detect the position of an object to be measured without scanning an image.
第１図は、かかる半導体装置検出器りの従来例を示すも
のであり、同図において、ｎ型シリコン層（純シリコン
層）１は、シリコン単結晶の薄片を正方形に形成したも
のであり、該１型シリコン層１の一方の面と他方の面に
は不純物の熱拡散等によってｐ型紙抗層２およびｎ型シ
リコ７層３が各々形成されている。上記ｐ型紙抗層２に
は、第２図に示すように２対の電極４，４′および５゜
５′が対向配設され、また上記ｎ型シリコン層３にはそ
の中央付近に電極６が付設されている。FIG. 1 shows a conventional example of such a semiconductor device detector, and in the figure, an n-type silicon layer (pure silicon layer) 1 is a square piece of silicon single crystal, A p-type paper layer 2 and an n-type silicon 7 layer 3 are formed on one side and the other side of the 1-type silicon layer 1, respectively, by thermal diffusion of impurities or the like. On the p-type paper layer 2, two pairs of electrodes 4, 4' and 5.5' are disposed facing each other as shown in FIG. is attached.
いま、上記ｐ型紙抗層２のＡ点に光ビームＬが入射され
ると、Ａ点におけるｐｎ接合に該光ビームＬのｙｅ量（
エネルギンに対応した過剰キャリアを生じ、該過剰キャ
リアに基づく電流が上記ｐ型紙抗層２を介して電極４
、４’ 、 ５ 、５’と電極６間にそれぞれ流れる。Now, when the light beam L is incident on the point A of the p-type paper layer 2, the ye amount of the light beam L (
Excess carriers corresponding to the energy are generated, and a current based on the excess carriers passes through the p-type paper layer 2 to the electrode 4.
, 4', 5, 5' and electrode 6, respectively.
上記ｐ型紙抗層２が均一な抵抗分布を有していることか
ら、上記各電流の値はＡ点から電極４゜４’ 、 ５
、５’までの距離に逆比例した大きさとなり、したがっ
て、対向する各型棒から出力される電流値の差または比
に基づいてＸ、Ｙ方向についての上記Ａ点の位置を検出
するようにしている１、かかる従来の半導体装置検出器
は、以下のような欠点を有していた。Since the p-type paper resisting layer 2 has a uniform resistance distribution, the values of each of the currents are from the point A to the electrodes 4°4', 5
, 5', and therefore, the position of the above point A in the X and Y directions is detected based on the difference or ratio of the current values output from the opposing mold bars. 1, such conventional semiconductor device detectors had the following drawbacks.
すなわち、シリコン単結晶を原材料としているために大
面積に形成することが技術的および経済的に困難であり
、かかる理由から、分解能を向上するためには複雑高価
な光学系を外付けする必要があった。また、ｐ型抵抗層
に光電変換作用と抵抗作用を兼用させているので、最適
な設計が困難であった。In other words, since silicon single crystal is used as the raw material, it is technically and economically difficult to form it over a large area, and for this reason, it is necessary to attach a complicated and expensive external optical system to improve resolution. there were. Furthermore, since the p-type resistance layer has both a photoelectric conversion function and a resistance function, it has been difficult to achieve an optimal design.
本発明の目的は、上記した欠点を解消した半導体装置検
出器を提供することにある。An object of the present invention is to provide a semiconductor device detector that eliminates the above-mentioned drawbacks.
本発明は、上記目的全達成するために、アモルファスシ
リコンヲ原材料として使用している。The present invention uses amorphous silicon as a raw material in order to achieve all of the above objects.
以下、添附図面を参照しながら本発明の詳細な説す」す
る。Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
第３図は、本発明に係る半導体装置検出器ＤＤの一実施
例を示している。この実施例では、正方形のガラス基板
１０に、透明導電膜１１、ｐ型アモルファスシリコンｆ
ｆ１１２． ｉ型アモルファスシリコン層１３、ｎ型ア
モルファススシリコン層１４および透明導電膜１５を順
次接合している。上記透明導電膜１１には枠状の電極」
６がその縁部に沿って伺設され（第４図参照）、また上
記透明導電膜１５には２対の枠状の電極１７ 、１７’
および１８ 、１８’がその縁部に沿って対向配設され
ている（第５図参照）。なお、上記透明導電膜１１ 、
１５はＩＴＯ（インジウム−スス−酸化物）や金屑薄膜
等から々す、また、上記ｐ型アモルファスシリコン層１
２． Ｂ１９７モル７アスシ’Ｊ コン層１３ オｊ
ヒｎ ｌ’＋Ｑアモルフーγスシリコン層１４は層側
４ば３００ Ａ 、 ３００（１〜５０００ Ａおよ
び１００Ａの厚さにそれぞれ蒸着されて形成される。FIG. 3 shows an embodiment of the semiconductor device detector DD according to the present invention. In this embodiment, a square glass substrate 10, a transparent conductive film 11, a p-type amorphous silicon f
f112. An i-type amorphous silicon layer 13, an n-type amorphous silicon layer 14, and a transparent conductive film 15 are sequentially bonded. The transparent conductive film 11 has a frame-shaped electrode.
6 is provided along its edge (see FIG. 4), and two pairs of frame-shaped electrodes 17 and 17' are provided on the transparent conductive film 15.
and 18, 18' are arranged oppositely along the edge (see FIG. 5). Note that the transparent conductive film 11,
15 is made of ITO (indium-sulfur oxide), gold scrap thin film, etc., and the p-type amorphous silicon layer 1
2. B197 mole 7 asci'J con layer 13 oj
The amorphous silicon layer 14 is formed by depositing the layer side 4 to a thickness of 300 A, 300 (1 to 5000 A and 100 A, respectively).
また、第３図では、ガラス基板１０の厚さを他の厚さと
比べて縮小しである。Further, in FIG. 3, the thickness of the glass substrate 10 is reduced compared to other thicknesses.
いま、第６図に示したように、」二記半導体装装置検出
器ＤＤに光ビームＬを入射すると、該光ビームＬの照射
点におけるｐｎ接合に過剰キャリアが生じ、該過剰キャ
リアに基づく電流が透明導電膜１５を介してそれぞれ電
極１７ 、１７’ 、 １８ 、１８’と電極１６の間
に流れる。Now, as shown in FIG. 6, when the light beam L is incident on the semiconductor device detector DD, excess carriers are generated at the pn junction at the irradiation point of the light beam L, and a current based on the excess carriers is generated. flows between the electrodes 17, 17', 18, 18' and the electrode 16 via the transparent conductive film 15, respectively.
しかして、上記透明導電膜１５が均一な抵抗分布を有し
ていることから、上記電流の大きさは上記照射点から各
電極までの距離に逆比例し、したがって対向する電極か
ら出力される電流値の差または比に基づいて上記照射点
の位置を算出することができる。Since the transparent conductive film 15 has a uniform resistance distribution, the magnitude of the current is inversely proportional to the distance from the irradiation point to each electrode, and therefore the current output from the opposing electrodes. The position of the irradiation point can be calculated based on the difference or ratio of values.
ところで、上述した実施例ではガラス基板にｐ型、ｎ型
およびｎ型のアモルファスシリコンを蒸着して半導体装
置検出器ＤＤｉ形成しているので、該半導体装置検出器
ＤＤは半透明となる。By the way, in the above embodiment, since the semiconductor device detector DDi is formed by depositing p-type, n-type, and n-type amorphous silicon on the glass substrate, the semiconductor device detector DD is semitransparent.
そこで、かかる半導体装置検出器ＤＤを２個所定距離を
おいて平行に配置すれば、光ビームは１つ目の半導体装
置検出器ＤＤを通過して２つ目の半導体装置検出器ＤＤ
を照射する。したがって、それぞれの半導体装置検出器
ＤＤにおける光ビームの照射点の位置検出結果に基づい
て、該光ビームの半導体装置検出器ＤＤへの照射角度を
得ることができる。Therefore, if two such semiconductor device detectors DD are arranged in parallel with a predetermined distance apart, the light beam passes through the first semiconductor device detector DD and then passes through the second semiconductor device detector DD.
irradiate. Therefore, based on the position detection result of the irradiation point of the light beam on each semiconductor device detector DD, the irradiation angle of the light beam on the semiconductor device detector DD can be obtained.
上記ガラス基板１０に代えて金属基板を用いても、上述
と同様にして光ビームの照射点を検出し得る。Even if a metal substrate is used instead of the glass substrate 10, the irradiation point of the light beam can be detected in the same manner as described above.
ただし、この場合は透明導電膜１５方向から光ビームを
受光する必要がある。However, in this case, it is necessary to receive the light beam from the direction of the transparent conductive film 15.
また、上記電極１６を透明導電膜１５に配設し、上記電
極１７ 、１７’ 、 １８ 、１８’全透明導電膜１
１に配設した態様でも、本発明は実施することができる
。さらに第７図に示す如く、電ＩＭ］７ 、１７’を透
明導電膜１１に、また電極１８ 、１８’を透明導電膜
１５にそれぞれ正方形の別の対向する辺に沿う態様で配
設しても本発明を実施し得る。なお、同図の実施例では
光ビームの照射点に発生した過剰キャリアのうち電子が
ｐ型アモルファスシリコン層１２に移動シ、正孔がｎ型
７モル７７１７９３７層１４に移動するため、上記電極
１７ 、１７’から出力される電流と、電極１８ 、１
８’から出力される箱、流とは極性が逆になる。Further, the electrodes 16 are disposed on the transparent conductive film 15, and the electrodes 17, 17', 18, 18' are completely transparent conductive film 1.
The present invention can also be implemented in the embodiment arranged in No. 1. Furthermore, as shown in FIG. 7, the electrodes 7 and 17' are arranged on the transparent conductive film 11, and the electrodes 18 and 18' are arranged on the transparent conductive film 15 along the opposite sides of the square. may also carry out the invention. In the embodiment shown in the same figure, among the excess carriers generated at the irradiation point of the light beam, electrons move to the p-type amorphous silicon layer 12, and holes move to the n-type 7717937 layer 14, so that the electrode 17 , 17' and the current output from the electrodes 18, 1
The polarity is opposite to that of the box and flow output from 8'.
本発明は、上述した構成および作用を有するので次のよ
うな効果をもつ。Since the present invention has the above-described configuration and operation, it has the following effects.
■ ｉ型アモルファスシリコンおよびｎ型アモルファｙ
、シリコンはシリコン単結晶に比べて高抵抗でかつキャ
リア移動度が低く、また、ｐ型、ｎ型およびｎ型アモル
ファス７リコノを薄膜に形成しているので光ビーム照射
点に発生した過剰キャリアは横方向へあまジ拡散しない
。したがって、発生した過剰キャリアの大部分が透明導
電膜に移動し、これによって光ビーム照射点の検出分解
能を高くすることができる。■ I-type amorphous silicon and n-type amorphous silicon
, silicon has higher resistance and lower carrier mobility than silicon single crystal, and since p-type, n-type, and n-type amorphous 7 silicon are formed in thin films, excess carriers generated at the light beam irradiation point are Does not spread too much laterally. Therefore, most of the generated excess carriers move to the transparent conductive film, thereby increasing the detection resolution of the light beam irradiation point.
■ アモルファスシリコン全大面積の薄膜に形成するこ
とは技術的に容易であるために大面積の半導体装置検出
器全安価に実現できる。また、かかる半導体装置検出器
に適用する光学系′ｆｒ：ＷｒＪ単化することができる
。■ Since it is technically easy to form a thin film of amorphous silicon over a large area, a large area semiconductor device detector can be realized at low cost. Further, the optical system 'fr:WrJ applied to such a semiconductor device detector can be simplified.
■ 光電効果により生じた電流を透明導電膜によって分
割するようにしているので、各アモルファスシリコン層
および抵抗部（透明導電膜）ｆｔ：それぞれの作用が最
も有効に行なわれるように個別に設計することができ、
これによって高感度化を図れる。■ Since the current generated by the photoelectric effect is divided by the transparent conductive film, each amorphous silicon layer and the resistive part (transparent conductive film) ft: must be designed individually so that each function is performed most effectively. is possible,
This allows higher sensitivity to be achieved.
■ 各アモルファスシリコン層の膜厚を調整することに
より分光感度を変化することができる。■ Spectral sensitivity can be changed by adjusting the thickness of each amorphous silicon layer.
第１図および第２図は、半導体装置検出器の従来例を示
す概念断面図および上面図、第３図、第４図および第５
図は、本発明に係る半導体装置検出器の一実施例を示す
断面図、上面図および下面図、第６図は、本発明に係る
半導体装置検出器の作用を説明するだめの概念断面図、
第７図は、本発明に係る半導体装置検出器の他の実施例
を示す斜視図である。
ＩＯ・ガラス基板、１１ 、１５・・・透１ｐＪ導電膜
、１２−ｐ型アモルファスシリコン層、１３− ｉ １
１’４１モルファスシリコン層、１４・・ｎ型アモルフ
ァスシリコン層、１６ 、１７ 、１７’ 、 １８
、１８’・・・電極。
第３図
匹
第６図
ｎ
第７図1 and 2 are conceptual cross-sectional views and top views showing conventional examples of semiconductor device detectors, and FIGS.
The figures are a cross-sectional view, a top view, and a bottom view showing one embodiment of a semiconductor device detector according to the present invention, and FIG. 6 is a conceptual cross-sectional view for explaining the operation of the semiconductor device detector according to the present invention.
FIG. 7 is a perspective view showing another embodiment of the semiconductor device detector according to the present invention. IO/glass substrate, 11, 15... transparent 1pJ conductive film, 12-p type amorphous silicon layer, 13- i 1
1'41 amorphous silicon layer, 14...n-type amorphous silicon layer, 16, 17, 17', 18
, 18'...electrode. Figure 3 Figure 6 Figure n Figure 7
Claims (1)
ン層およびｎ型アモルファスシリコン層を順次接合した
半導体層と、該半導体層の両面にそれぞれ接合した透光
性導電膜と、該透光性導電膜に対向配置した少なくとも
１対の棒状電極とを具えた半導体装置検出器。A semiconductor layer in which an n-type amorphous silicon layer and an n-type amorphous silicon layer are sequentially bonded to a p-type amorphous silicon layer, a light-transmitting conductive film bonded to both surfaces of the semiconductor layer, and disposed opposite to the light-transmitting conductive film. A semiconductor device detector comprising at least one pair of rod-shaped electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57161470A JPS5950579A (en) | 1982-09-16 | 1982-09-16 | Semiconductor optical position detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57161470A JPS5950579A (en) | 1982-09-16 | 1982-09-16 | Semiconductor optical position detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5950579A true JPS5950579A (en) | 1984-03-23 |
| JPH04395B2 JPH04395B2 (en) | 1992-01-07 |
Family
ID=15735702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57161470A Granted JPS5950579A (en) | 1982-09-16 | 1982-09-16 | Semiconductor optical position detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5950579A (en) |
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5956778A (en) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | Position detector for semiconductor device |
| JPS5984587A (en) * | 1982-11-08 | 1984-05-16 | Anritsu Corp | Location sensor |
| JPS61201482A (en) * | 1985-03-04 | 1986-09-06 | Komatsu Ltd | Semiconductor optical position detector |
| JPS61216490A (en) * | 1985-03-22 | 1986-09-26 | Komatsu Ltd | Semiconductor light position detector |
| JPS61229372A (en) * | 1985-04-03 | 1986-10-13 | Komatsu Ltd | Semiconductor position detector |
| JPS61204243U (en) * | 1985-06-08 | 1986-12-23 | ||
| JPS62203346A (en) * | 1986-03-04 | 1987-09-08 | Hamamatsu Photonics Kk | Semiconductor position detector |
| US4761547A (en) * | 1985-03-18 | 1988-08-02 | Kabushiki Kaisha Komatsu Seisakusho | Semiconductor photoelectric conversion device for light incident position detection |
| EP0340412A2 (en) * | 1988-03-07 | 1989-11-08 | Kanegafuchi Chemical Industry Co., Ltd. | Semiconductor light beam position sensor, and image input device using this sensor |
| JPH0274838A (en) * | 1988-09-09 | 1990-03-14 | Komatsu Ltd | Triaxial force sensor |
| JPH0294863U (en) * | 1989-01-11 | 1990-07-27 | ||
| EP0877231A1 (en) * | 1997-05-09 | 1998-11-11 | Vishay S.A. | Device for non-contact measuring of positon and displacement |
| JP2016510397A (en) * | 2012-12-19 | 2016-04-07 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | Detector for optically detecting one or more objects |
| US9989623B2 (en) | 2013-06-13 | 2018-06-05 | Basf Se | Detector for determining a longitudinal coordinate of an object via an intensity distribution of illuminated pixels |
| US10012532B2 (en) | 2013-08-19 | 2018-07-03 | Basf Se | Optical detector |
| US10094927B2 (en) | 2014-09-29 | 2018-10-09 | Basf Se | Detector for optically determining a position of at least one object |
| US10353049B2 (en) | 2013-06-13 | 2019-07-16 | Basf Se | Detector for optically detecting an orientation of at least one object |
| US10412283B2 (en) | 2015-09-14 | 2019-09-10 | Trinamix Gmbh | Dual aperture 3D camera and method using differing aperture areas |
| JP2020523784A (en) * | 2017-06-06 | 2020-08-06 | フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン | Sensor device and manufacturing method thereof |
| US10775505B2 (en) | 2015-01-30 | 2020-09-15 | Trinamix Gmbh | Detector for an optical detection of at least one object |
| US10890491B2 (en) | 2016-10-25 | 2021-01-12 | Trinamix Gmbh | Optical detector for an optical detection |
| US10948567B2 (en) | 2016-11-17 | 2021-03-16 | Trinamix Gmbh | Detector for optically detecting at least one object |
| US10955936B2 (en) | 2015-07-17 | 2021-03-23 | Trinamix Gmbh | Detector for optically detecting at least one object |
| US11041718B2 (en) | 2014-07-08 | 2021-06-22 | Basf Se | Detector for determining a position of at least one object |
| US11060922B2 (en) | 2017-04-20 | 2021-07-13 | Trinamix Gmbh | Optical detector |
| US11067692B2 (en) | 2017-06-26 | 2021-07-20 | Trinamix Gmbh | Detector for determining a position of at least one object |
| US11125880B2 (en) | 2014-12-09 | 2021-09-21 | Basf Se | Optical detector |
| US11211513B2 (en) | 2016-07-29 | 2021-12-28 | Trinamix Gmbh | Optical sensor and detector for an optical detection |
| US11428787B2 (en) | 2016-10-25 | 2022-08-30 | Trinamix Gmbh | Detector for an optical detection of at least one object |
| US11860292B2 (en) | 2016-11-17 | 2024-01-02 | Trinamix Gmbh | Detector and methods for authenticating at least one object |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS4997583A (en) * | 1972-12-01 | 1974-09-14 | ||
| JPS5587007U (en) * | 1978-12-12 | 1980-06-16 | ||
| JPS6057716A (en) * | 1983-07-27 | 1985-04-03 | アメリカン テレフオン アンド テレグラフ カムパニ− | Waveform combining device |
Cited By (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0462187B2 (en) * | 1982-09-27 | 1992-10-05 | Tokyo Shibaura Electric Co | |
| JPS5956778A (en) * | 1982-09-27 | 1984-04-02 | Toshiba Corp | Position detector for semiconductor device |
| JPS5984587A (en) * | 1982-11-08 | 1984-05-16 | Anritsu Corp | Location sensor |
| JPS61201482A (en) * | 1985-03-04 | 1986-09-06 | Komatsu Ltd | Semiconductor optical position detector |
| US4761547A (en) * | 1985-03-18 | 1988-08-02 | Kabushiki Kaisha Komatsu Seisakusho | Semiconductor photoelectric conversion device for light incident position detection |
| JPS61216490A (en) * | 1985-03-22 | 1986-09-26 | Komatsu Ltd | Semiconductor light position detector |
| JPS61229372A (en) * | 1985-04-03 | 1986-10-13 | Komatsu Ltd | Semiconductor position detector |
| JPS61204243U (en) * | 1985-06-08 | 1986-12-23 | ||
| JPS62203346A (en) * | 1986-03-04 | 1987-09-08 | Hamamatsu Photonics Kk | Semiconductor position detector |
| US5126815A (en) * | 1988-03-07 | 1992-06-30 | Kanegafuchi Chemical Industry Co., Ltd. | Position sensor and picture image input device |
| US5025297A (en) * | 1988-03-07 | 1991-06-18 | Kanegafuchi Chemical Industry Co., Ltd. | Semiconductor light beam position sensor element and a position sensor and a picture image input device each using the same |
| EP0340412A2 (en) * | 1988-03-07 | 1989-11-08 | Kanegafuchi Chemical Industry Co., Ltd. | Semiconductor light beam position sensor, and image input device using this sensor |
| JPH0274838A (en) * | 1988-09-09 | 1990-03-14 | Komatsu Ltd | Triaxial force sensor |
| JPH0294863U (en) * | 1989-01-11 | 1990-07-27 | ||
| US6034765A (en) * | 1997-05-09 | 2000-03-07 | Vishay Sa | Contactless position and displacement measuring device |
| FR2763122A1 (en) * | 1997-05-09 | 1998-11-13 | Vishay Sa | NON-CONTACT POSITION MEASUREMENT AND MOVEMENT DEVICE |
| EP0877231A1 (en) * | 1997-05-09 | 1998-11-11 | Vishay S.A. | Device for non-contact measuring of positon and displacement |
| JP2016510397A (en) * | 2012-12-19 | 2016-04-07 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | Detector for optically detecting one or more objects |
| US10120078B2 (en) | 2012-12-19 | 2018-11-06 | Basf Se | Detector having a transversal optical sensor and a longitudinal optical sensor |
| US9989623B2 (en) | 2013-06-13 | 2018-06-05 | Basf Se | Detector for determining a longitudinal coordinate of an object via an intensity distribution of illuminated pixels |
| US10823818B2 (en) | 2013-06-13 | 2020-11-03 | Basf Se | Detector for optically detecting at least one object |
| US10353049B2 (en) | 2013-06-13 | 2019-07-16 | Basf Se | Detector for optically detecting an orientation of at least one object |
| US10845459B2 (en) | 2013-06-13 | 2020-11-24 | Basf Se | Detector for optically detecting at least one object |
| US10012532B2 (en) | 2013-08-19 | 2018-07-03 | Basf Se | Optical detector |
| US11041718B2 (en) | 2014-07-08 | 2021-06-22 | Basf Se | Detector for determining a position of at least one object |
| US10094927B2 (en) | 2014-09-29 | 2018-10-09 | Basf Se | Detector for optically determining a position of at least one object |
| US11125880B2 (en) | 2014-12-09 | 2021-09-21 | Basf Se | Optical detector |
| US10775505B2 (en) | 2015-01-30 | 2020-09-15 | Trinamix Gmbh | Detector for an optical detection of at least one object |
| US10955936B2 (en) | 2015-07-17 | 2021-03-23 | Trinamix Gmbh | Detector for optically detecting at least one object |
| US10412283B2 (en) | 2015-09-14 | 2019-09-10 | Trinamix Gmbh | Dual aperture 3D camera and method using differing aperture areas |
| US11211513B2 (en) | 2016-07-29 | 2021-12-28 | Trinamix Gmbh | Optical sensor and detector for an optical detection |
| US11428787B2 (en) | 2016-10-25 | 2022-08-30 | Trinamix Gmbh | Detector for an optical detection of at least one object |
| US10890491B2 (en) | 2016-10-25 | 2021-01-12 | Trinamix Gmbh | Optical detector for an optical detection |
| US11415661B2 (en) | 2016-11-17 | 2022-08-16 | Trinamix Gmbh | Detector for optically detecting at least one object |
| US10948567B2 (en) | 2016-11-17 | 2021-03-16 | Trinamix Gmbh | Detector for optically detecting at least one object |
| US11635486B2 (en) | 2016-11-17 | 2023-04-25 | Trinamix Gmbh | Detector for optically detecting at least one object |
| US11698435B2 (en) | 2016-11-17 | 2023-07-11 | Trinamix Gmbh | Detector for optically detecting at least one object |
| US11860292B2 (en) | 2016-11-17 | 2024-01-02 | Trinamix Gmbh | Detector and methods for authenticating at least one object |
| US11060922B2 (en) | 2017-04-20 | 2021-07-13 | Trinamix Gmbh | Optical detector |
| JP2020523784A (en) * | 2017-06-06 | 2020-08-06 | フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン | Sensor device and manufacturing method thereof |
| US11217619B2 (en) | 2017-06-06 | 2022-01-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Sensor device and method of manufacturing the same |
| US11067692B2 (en) | 2017-06-26 | 2021-07-20 | Trinamix Gmbh | Detector for determining a position of at least one object |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04395B2 (en) | 1992-01-07 |
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