JPS5948938A - Wafer chuck - Google Patents

Wafer chuck

Info

Publication number
JPS5948938A
JPS5948938A JP15995982A JP15995982A JPS5948938A JP S5948938 A JPS5948938 A JP S5948938A JP 15995982 A JP15995982 A JP 15995982A JP 15995982 A JP15995982 A JP 15995982A JP S5948938 A JPS5948938 A JP S5948938A
Authority
JP
Japan
Prior art keywords
wafer
chuck
suction head
vacuum
bernoulli
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15995982A
Other languages
Japanese (ja)
Inventor
Tatsuhiko Nishimura
辰彦 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15995982A priority Critical patent/JPS5948938A/en
Publication of JPS5948938A publication Critical patent/JPS5948938A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Gripping Jigs, Holding Jigs, And Positioning Jigs (AREA)
  • Sheets, Magazines, And Separation Thereof (AREA)

Abstract

PURPOSE:To obtain the chuck, which does not damage a wafer and combines a vacuum chuck and a Bernoulli chuck, by properly using a suction from a negative pressure introducing pipe and the injection of an air current from an air- current introducing pipe and tapering the inner edge of the nose of an attracting head. CONSTITUTION:When a valve is changed over and the wafer is sucked under vacuum, negative pressure is introduced to the recessed section of the lower surface of the head 11 from the pipe 13, and the tapered surface 12 of the head forms angles of 2 deg.-5 deg. together with the top surface of the wafer 1, thus attracting and holding the wafer under the state of a linear contact in a fringe shoulder section. Accordingly, the surface of the wafer is not damaged. When the valve is changed over, a suction under vacuum is stopped and N2 gas is introduced 18, N2 flows on the surface of the wafer 1 along a plate 17, and the wafer is chucked by buoyancy. A distance (t) between the wafer and the plate is determined according to the flow rate of N2. A chuck surface and a wafer surface are kept parallel in either case of the vacuum chuck or the Bernoulli chuck by the action of a spherical bearing 14. The chuck is suitable for receiving or feeding the wafer from or to the upper section of the heating plate of a CVD device.

Description

【発明の詳細な説明】 〔発明の（支術分野〕 本発明は半導体ウェハーを保持１−るためのウェハーチ
ャックＣ：貼ｌし、′侍（二（、：ＶＤ装置内の所定位
置Ｃ：半導体ウェハーをセットし、あるいはＣＶＤ装置
内から半導体ウェハーをＪ１ｙ切出す際に用いて効果を
発揮するウェハーチャックＣ二係るＯ 〔発明の技術的背景およびその間麹、６〕ＵＶＩ）装置
の加熱板上Ｃ二被処）ＪＩＩ（Ａである半導体ウェハー
を設置鴎する際、従来は第１図（Ａｌｌｌｌアポうにウ
ェハ−１１７Ｊ表面をバキュームピンセット２で唱名し
てチャッキングし、これを手作業で加熱板上に載−１す
る方法が用いられていた０半綱体ウェハーをｅＶＤ３−
からｆｉｇ　）Ｊ出Ｔ場合もバキュームビンセラ）２に
よる同様ＱＪｈｌ去が用いられていたｐこのようなバキ
ュームピンセット２（二よって半導体ウェハーｌをＣＶ
ＩＪｈ直内ｆニセットし、あるいはｅｖｔ＋装置から月
×１」出丁方法≦二は伏のような問題かあった０即チ、
バキューム吸着式であること力）らウェハーの中央部分
をチャッキング■ること（−７ｊｔｌ。[Detailed Description of the Invention] [Substantive Field of the Invention] The present invention provides a wafer chuck C for holding a semiconductor wafer. Wafer chuck C2 is effective when setting a semiconductor wafer or cutting out a semiconductor wafer from inside a CVD device. Conventionally, when placing a semiconductor wafer in JII (A), the surface of the wafer 117J was chanted and chucked with vacuum tweezers 2, and then heated manually. eVD3-
From fig) In the case of J output T, a similar QJhl removal was used.
IJh immediate f is set, or from evt + device month x 1" How to issue ≦ 2, there was a problem like 0 immediately,
Chucking the central part of the wafer from the vacuum suction type (-7jtl).

ウェハーの表面Ｓユ陽がついてしまう口また。被処理後
のウェハーを吸看して保持する際にはつエバーの表面ｇ
二形成されたＣＶＤ薄膜にバキュームピンセットの跡が
残り、その部分Ｃ二形成されたＩＣチップには不良品が
発生していた□これに対して、第１図（ｃ）に示すベル
ヌーイチャックと呼はれる非接触型のウェハーチャック
を用いれは、ウエハーノの表面に傷跡をつけることなく
、ウェハーを保持することができる。Also, the surface of the wafer may get dirty. When sucking and holding the wafer after processing, the surface of the lever
□The vacuum tweezers left traces on the formed CVD thin film, and the resulting IC chips were defective. A non-contact type wafer chuck can be used to hold a wafer without damaging the surface of the wafer.

このベルヌーイチャックはベルヌーイの定理を応用した
もので、半導体ウェハーｌの上面Ｃ二蒙素ガス等の気体
を高速で諦すことによりウェハー７の下向に発生する上
回きの圧力Ｐでウェハーｔｙ保袖するものである０とこ
ろが、ベルヌーイチャックではウェハーｌがチャックと
の出］に一定の微小間隔だけＲｔｉ＝ｊ−Ｉして保持さ
れるためウェハーｔｌ”ｌ左右（二かなｉ）移ｉす１し
、このために保持されているウェハーｌを所定位置に載
置する際の位置槓曳はかな″り低い。従って、Ｃ“ＶＤ
装置、の加熱板上Ｃ二半碑体りエハーを整列して載―す
る際にベルヌーイチャックを使用すると。This Bernoulli chuck is an application of Bernoulli's theorem. By giving up gas such as dimonide gas on the upper surface of the semiconductor wafer l at a high speed, the wafer ty is However, in the Bernoulli chuck, the wafer l is held at a certain minute distance Rti=j-I between the edges of the chuck, so the wafer tl''l is moved left and right (two kana i). 1. For this reason, the positioning effort when placing the held wafer l in a predetermined position is quite low. Therefore, C“VD
A Bernoulli chuck is used when aligning and placing the two-half C wafer on the heating plate of the device.

ウェハーを加熱板上に＠置した後、その位置を補正する
ためにバキュームピンセットを使用しなければならず、
前述したと同じ問題を生じることになるＤ 〔発明の目的〕 本発明は上記事情に猷みてなされたもので。After placing the wafer on the hot plate, vacuum tweezers must be used to correct its position.
D [Object of the Invention] The present invention has been made in consideration of the above-mentioned circumstances.

バキュームチャックとしてもベルヌーイチャックとして
も使甲でき、しかもバキュームチャックとして使用する
際には半導体ウェハーがチャックと線接触で吸着される
構造とすることＣ二よ１）、゛半導体ウェハーの表面に
１易をつけることなくこれを保描すると共に保持したウ
ェハーをｉｈい位置積度で所定位置に疎部することがで
きるウェハーチャックを提供し、もって（：　Ｖ　Ｄ装
置内へ半導体ウェハーを出し入れする際の従来の問題を
解決しようとするものである□ 〔発明の摺す５要〕 本発明によるクエハーチャックトゴ、ド万（二回って拡
開した笠状の吸着ヘッドと、該仮名ヘッドの頂部に連結
された負圧尊入管と、Ｏｊ１記吸右〜ツドの先端開口部
に吸着保持される半導体ウェハーの同縁肩部が当接する
ように前記吸着ヘッドの先端部内縁に形成されたテーパ
面と、酊１記吸希ヘッドの中央部でその開口端面と略同
レベルに配設されたベルヌーイチャック用の気流案内板
と、自；■記吸着ヘッドを上方力）ら貫通し、て的記気
流姿内板に連結され、該気流案内板の下方（ニベルヌー
イチャック用の気流を１１貧射する気７１↑喫入管とを
μ固したことを特徴とするものである。It can be used as either a vacuum chuck or a Bernoulli chuck, and when used as a vacuum chuck, the semiconductor wafer must be attracted to the chuck in line contact C2-1). To provide a wafer chuck that can hold the wafer without attaching it, and also can loosely place the held wafer in a predetermined position with high positional density. This is an attempt to solve the conventional problems. [Five points of the invention] The present invention has a cap-shaped suction head that expands twice, and a A tapered surface formed on the inner edge of the tip of the suction head so that the connected negative pressure intake pipe and the shoulder of the same edge of the semiconductor wafer which is suctioned and held in the tip opening of the suction head and the suction head come into contact with each other. , The airflow guide plate for the Bernoulli chuck is arranged at the center of the suction head at approximately the same level as the opening end surface of the suction head, and the suction head is passed through the suction head by an upward force. It is connected to the inner plate and is characterized in that the lower part of the airflow guide plate (the air 71↑intake pipe that irradiates the airflow for the Niverneuil chuck) is hardened.

上記構成からなるウェハーチャックは負圧導入管からの
吸引と気ｆＭ嫁入管からのベルヌーイチャック産気ｂ１
１、噴射とを使い分けることζ二よってバキュームチャ
ックとしてもベルヌーイチャックとしても４σ・用する
ことができる◎しかも。The wafer chuck with the above configuration uses suction from the negative pressure introduction pipe and air from the air fM transfer pipe into the Bernoulli chuck b1.
1. By using injection and ζ2, it can be used as a vacuum chuck or a Bernoulli chuck. Moreover, it can be used as a 4σ chuck.

バキュームチャックとして便用−「る場合、仮相保持さ
れる半導体ウェハーはその周縁周部７ａ′吸呑ヘツドの
先端部内縁に形成されたテーパ面（二当接して保持され
る。−従って、この場合の半導体ウェハーと吸布ヘッド
部との接触はウェハー周縁（７，ＩＪｌ■ＩＳと吸着ヘ
ッド先端のテーパ面との線接触となり、この結果ウェハ
ー表面に傷がつくのを防止することができる。When used conveniently as a vacuum chuck, the semiconductor wafer to be temporarily held is held by the tapered surface (two tapers formed on the inner edge of the tip of the suction head) on the peripheral edge 7a' of the suction head. In this case, the contact between the semiconductor wafer and the suction head is a line contact between the wafer periphery (7, IJl IS) and the tapered surface of the tip of the suction head, and as a result, it is possible to prevent the wafer surface from being scratched.

［発明の実施例］ 第２図は本発明の一実施１９１１になるウェハーチャッ
クを示す断面図である。同図−おいて、ＩＩは半導体ウ
ェハーｌを吸着保持するための吸着ヘッドである０該吸
看ヘツトｌｌは下方に拡開した笠状の形状を有しており
、その先ｍＡｉ部内縁には内側に向けて傾斜したテーパ
面１２が形成されている。このテーパ面１２はｅＭヘッ
ドＩＩに吸龜保持される半２！−１Ｌ俸ウェハーｌの周
ｆｌ’ｌ　ｋ４　ｇｌｓに当接するようにル成されてい
る０また。[Embodiments of the Invention] FIG. 2 is a sectional view showing a wafer chuck according to one embodiment 1911 of the present invention. In the same figure, II is a suction head for suctioning and holding the semiconductor wafer l. The suction head l has a cap-like shape that expands downward, and the inner edge of the mAi section beyond it is A tapered surface 12 that slopes inward is formed. This tapered surface 12 is held by the eM head II in half 2! -1L wafer l's periphery fl'l k4 gls.

吸着ヘット１ｌＯＪ石部には負圧尋入管１３か連結され
ている６　ｎｋ負圧堺入愉１３は球面軸承１４を介して
連結部１５に連結され、該連結部１５はｌ柴吸引肯ｔｂ
Ｃ一連結されている。他方。A negative pressure intake pipe 13 is connected to the suction head 1lOJ stone part.6nk Negative pressure Sakai intake pipe 13 is connected to a connecting part 15 via a spherical bearing 14, and the connecting part 15 is
C is connected. On the other hand.

吸宥ヘッドｔノｏｗ開放端ｌと略同レベルＣ二はベルヌ
ーチャック用の案内板ｊ７か配設され、該案内板１７は
仮布ヘットｌｌに収ｉ１１．Ｊけられている０また１頁
窄吸引管１６．〕更和１１−１５および自圧導入管１３
の中を目通してベルヌーイチャック用の気流導入管１８
が配設されている。At approximately the same level as the open end 1 of the suction head t, a guide plate j7 for the Bernoux chuck is provided, and the guide plate 17 is accommodated in the temporary cloth head 11. 0 or 1 page narrowed suction tube 16. 〕Kyowa 11-15 and self-pressure introduction pipe 13
Air flow introduction pipe 18 for Bernoulli chuck through the inside
is installed.

この気流導入管１８は前記ベルヌーイチャック用案内板
Ｉ７に嵌装されてお幻、該案内をｙノＺのト方に向けて
ベルヌーイチャック用。）気流を噴身１するようＣ二な
っているロ史Ｃ二、酌Ｊ呂已吸着ヘッドｌノにはその端
線がら下方に延出するベルヌーイチャック用のウニへ−
ガイドｋ　ｔ　ｙが設けられている０そして、　４ｉｌ
記真空吸引伯゛ノロがらの真空吸引と、　Ｑｉｉ記気流
椅入管１８がらのベルヌーイチャック用の気Ｍｒ醇入と
は、バルブで任意に１ｕＪｉ１換えられるよう（二なっ
ている。This air flow introduction pipe 18 is fitted onto the guide plate I7 for the Bernoulli chuck, and the guide is directed in the direction of Y/Z toward the Bernoulli chuck. ) The airflow is made to flow into the jet 1, and the suction head 1 has its end line extending downward to the sea urchin for the Bernoulli chuck.
Guide k ty is provided0 and 4il
The vacuum suction of the vacuum suction unit described above and the air intake for the Bernoulli chuck of the Qii air flow intake tube 18 can be changed arbitrarily by a valve.

上記横′戟からなるウェハーチャックをバキュームチャ
ックとして使用するときは、バルブの切を）換えによｌ
Ｊ前記真空吸引管ノロから真空吸引をｉ７よい、吸着ヘ
ッドＩＩをしＪ示のように半４１クエハー１０ＪＣ↓上
に配「表する。これＣユよｌ）。When using the above horizontal wafer chuck as a vacuum chuck, the valve must be turned off.
Apply vacuum suction from the vacuum suction tube Noro, and place the suction head II on the semi-41 Quar 10JC↓ as shown.

吸着ヘッド１１下側の凹部には負圧尋人’ａ’　ｔ　、
？から買出が尋人され、この負圧（二よって半導体ウェ
ハー１は吸付ヘッドＩＩ（二ψ（霜保持される■その際
、吸着ヘッド１１の的記テーパ面１２は半導体ウェハー
ｌの頂面に対して２’　−５’の角度をなすように形成
されているから、第３区＋　（Ａ）　ｌ二本ずように半
解体ウェハーｌはその周縁月片５ンテーバ面１２に当接
し、この結果吸着ヘットＪｌと線接触の状態で吸９ａ保
持さ些る０従って、従来のバキュームピンセットのよう
に半櫨俸りエハーｌを保持する際にその表面に傷をつけ
ることはない。他方、上記軍、そ施が１の■ノエハーチ
ャックをベルヌーイチ・Ｖツクとして使用する際は、バ
ルブの切替によって呉至吸引を（−Ｖ・止すると同時に
気７Ｍ、偏人管１８から窒素ガス等のベルヌーイチャッ
ク相克１ｊｔｔ　’ｒ　都人ずれはよい、これ（二よっ
て袖も３図（Ｂｌ　ｉ二本丁ようにベルヌーイチャック
用気流が案内板１７に沿ってクエへ−１１７１大面を流
れ、ウェハーｌはこの気流（二よｆｌ生じる浮力によっ
てウェハーヲーヤック（二保持される０このときの半導
体ウェハー１と案内板１２どの間の距離ｔは気流の浦祝
によって異なるひなお、上記実施例のウェハーチャック
では。Negative pressure 'a' t,
? Due to this negative pressure (2), the semiconductor wafer 1 is held in the suction head II (2ψ (frost)). Since it is formed so as to form an angle of 2' - 5' with respect to As a result, the suction head 9a is held in line contact with the suction head Jl.Therefore, unlike conventional vacuum tweezers, the surface of the half-shaped wafer will not be scratched when it is held. When using the above-mentioned Noeher Chuck as a Bernuich V-tsuku, switch the valve to stop the suction (-V) and at the same time release air 7M, nitrogen gas etc. from the eccentric tube 18. Bernoulli Chuck Conflict 1jtt 'r It's good that people are out of town, this (2, so the sleeves are also 3 (Bl i 2 pieces) The airflow for the Bernoulli chuck flows along the guide plate 17 to the que-1171 large surface, and the wafer l The distance t between the semiconductor wafer 1 and the guide plate 12 at this time varies depending on the size of the air current. Well then.

バキュームチャックとして使用する場合およびベルヌー
イチャックとして使用する場合の何れの＃、４舎も１球
面ｄｘｈ承１４の１′「川によってチャックのｌ１ｉＪ
きが半導体ウェハー／　ｆ７Ｊ表面に倣うようになって
いる。When used as a vacuum chuck and when used as a Bernoulli chuck, both # and 4 are 1 spherical dxh bearing 14'1'
The surface pattern follows that of a semiconductor wafer/f7J.

〔発明の効果〕〔Effect of the invention〕

土建のようζ二、木光明Ｃ二よるウェハーチャック）１
バキユームチヤツクとし′Ｃもベルヌーイチャックとし
ても仕へに使い分けることができ。Wafer chuck by Doken no Yo ζ2, Kikomei C2) 1
It can be used as either a baggy chuck or a Bernoulli chuck.

しかもバキュームチャックとし７て使用Ｔる際にも半解
体ウェハーカ表面を隅っけることがないことから、ＣＶ
Ｉ）装！内、内の加熱板上に半導体ウェハーを設置しあ
るいは加熱板上カウェハーを収１〕出す際０．〕ウエハ
ーチヤツクとして特（−後れた効果をイー」する０１、 ｆＪＪ　ｉ：、　、半得体つコーハー乞ＣＶ　Ｌ）装置
内の加熱板上に１役ｉ−」才る１５．キにはこのウェハ
ーチャックをバキュームチャックとして用いることによ
り。Moreover, even when used as a vacuum chuck, the surface of the semi-disassembled wafer is not cornered, so the CV
I) Dressing! 0. When placing a semiconductor wafer on the heating plate inside or removing the wafer from the heating plate. ] Specially used as a wafer chuck (01, fJJi:, , semi-obtainable cohering CV L) on the heating plate in the equipment 15. By using this wafer chuck as a vacuum chuck.

半導体ウェハー表向に伺＠傷を付けることなく。Visits the surface of semiconductor wafers without damaging them.

しηλも１−い位置積度で半導体ウェハーを加熱板上の
り１定位置に載−することができる。他方。The semiconductor wafer can be placed at a fixed position on the heating plate with a positional density of ηλ of 1. On the other hand.

ＣＶＤ％―内の加熱板上から処理箔の半合体ウェハーを
取り出すときには１本発明のウェハーチャックをベルヌ
ーイチャックとＬ９て使用１することによｆｌ、にνＬ
）＃膜Ｃ：は何らＪ（７ｑ：を付けることなく非接１秋
の状態で、ウェハーを１１メリ出１−ことができる◎ま
た。半４Ｉ体ウェハーを（ν１）装Ｌｆ内から収（）出
ず際にベルヌーイチャックとして使用ずれは、チャック
とウェハーどの接触７１回だけの線持触で出し入れでき
ろ曲、伏のよう７よ効果もｒ＝られる。When taking out a semi-combined wafer of treated foil from a heating plate in a CVD chamber, the wafer chuck of the present invention is used with a Bernoulli chuck and L9.
)#Film C: can be used to extract 11 wafers in the non-contact state without adding any J(7q:. ) When used as a Bernoulli chuck, the chuck and wafer can be moved in and out with only 71 line-holding touches.

即し、ベルヌーイチャックの場侍は保持下べさ半導体ウ
ェハーとウェハーチャックとの１［１１力位ＥＩ　Ｑ’
１１９：をれ［（シても支障ないから、半導体りエハー
収り出しの際のセットアツプ時間を短稲することができ
、調整も１′ｆ易であるｅまた。パギュームナヤツクで
の使用とベルヌーイチャックでの使１１４とを父仕に行
なうから、バキュームチャック時に二吸福ヘッドカテー
パ出１（二１・「へした腿１欠４−がベルヌーイチャッ
ク１１方力大（％Ｚ　’二よって除去され、これによっ
てクリーニング効果が得られるという利点を有する。Therefore, when using a Bernoulli chuck, the force level EI Q' between the semiconductor wafer and the wafer chuck is 1 [11].
119: Since there is no problem even if the wafer is removed, the setup time when removing the semiconductor wafer can be shortened, and the adjustment is also easy. Since I will be using the Bernoulli chuck and using the Bernoulli chuck 114, when I vacuum chuck it, I will use two sucking head caps with a taper out 1 (21. This has the advantage of being removed, thereby providing a cleaning effect.

上述のようＣ二１本発明のウェハーチャックによれはＣ
−’　１）　公置円へ半導体ウェハーを出し入れするｈ
Ｇ　Ｌ）Ｊ従来の問題を解決できると共に、その細杆々
の効果を得ることができる・As mentioned above, the wafer chuck of the present invention has C.
-' 1) Inserting and removing semiconductor wafers from the public circleh
G L)J It is possible to solve conventional problems and obtain detailed effects.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（Ａ）、　、　（Ｂ）はバキュームピンセットの
説明図であ１）、Ｔｈ１図Ｃ）はベルヌーイチャックの
説明（！！ｌＳ、　、第２図は本発明の、一実施例にな
るウェハーチャックを示す断面図、第３固体）（Ｂ）は
夫々第２図のウェハーチャックの作用をボア説明図であ
る。 ７７・・・吸着ヘッド、１２・・・テーパ面、ノ３・・
・負圧導入管、１４・・・球面軸承、１５・・・連結管
。 １６・・・真草牧引督°、ノー・・・気流案内板、１Ｂ
・・・気７ｆ＋ｔ　８入管、１−９・・・ウェハーガイ
ド板。 出願人代理人　弁理士　鈴　江　武　彦゛第　１　図 第３１！ｌ （Ａ）Figures 1 (A), , and (B) are explanatory diagrams of vacuum tweezers 1), Th1 Figure C) is an explanation of Bernoulli chuck (!!lS), and Figure 2 is an embodiment of the present invention. A cross-sectional view showing a wafer chuck, 3rd solid body) (B) is a bore explanatory view of the function of the wafer chuck shown in FIG. 2, respectively. 77... Suction head, 12... Tapered surface, No. 3...
・Negative pressure introduction pipe, 14... Spherical bearing, 15... Connecting pipe. 16... Makusamaki guide °, no... airflow guide plate, 1B
... air 7f+t 8 entry pipe, 1-9... wafer guide plate. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 31! l (A)

Claims (1)

【特許請求の範囲】 下方に市１って拡開し７た笠状力吸着ヘッドと。 該吸犯ヘッドの頂部に連結された貝圧睨入管と。 前記吸着ヘッドの先端開口部に吸着保持される半管体ウ
ェハーの周＃胸部が当接するようにｉｎ記吸呑ヘッドの
先端部内Ｇ５？　ｌ二形取、されたテーパ面と、　Ｑｉ
前記吸覇ヘット°の中央部でその開口端面と略同レベル
に配設されたベルヌーイチャック用の気流案内板と、酊
１記吸屑ヘッドを上方から１抽してｉｉｌ記気流案内板
に連結され、該気流−屡内様の下方にベルヌーイチャッ
ク用の気流を１質射１−る気７ｊ＋を尋入首とを置端し
Ｋことを特徴とするウェハーチャック◎[Claims] A cap-like force suction head that expands downward. and a shellfish pressure intrusion tube connected to the top of the crime suction head. G5? l Two-shaped tapered surface and Qi
An airflow guide plate for a Bernoulli chuck disposed at the center of the suction head at approximately the same level as the opening end surface thereof, and a suction head from above connected to the airflow guide plate (iii). ◎ A wafer chuck characterized in that an air flow for a Bernoulli chuck is placed below the air flow and an air flow for the Bernoulli chuck is placed at the end.
JP15995982A 1982-09-14 1982-09-14 Wafer chuck Pending JPS5948938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15995982A JPS5948938A (en) 1982-09-14 1982-09-14 Wafer chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15995982A JPS5948938A (en) 1982-09-14 1982-09-14 Wafer chuck

Publications (1)

Publication Number Publication Date
JPS5948938A true JPS5948938A (en) 1984-03-21

Family

ID=15704902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15995982A Pending JPS5948938A (en) 1982-09-14 1982-09-14 Wafer chuck

Country Status (1)

Country Link
JP (1) JPS5948938A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61140432A (en) * 1984-12-11 1986-06-27 Shinko Denki Kk Holder of wafer or the like
JPH02303047A (en) * 1989-05-18 1990-12-17 Shioya Seisakusho:Kk Wafer chucking and device therefor
EP1091389A2 (en) * 1999-10-08 2001-04-11 Infineon Technologies AG Bernoulli and vacuum combined gripper
KR100392864B1 (en) * 1999-12-22 2003-07-28 가부시키가이샤 오크세이사꾸쇼 Substrate transfer apparatus
EP1473764A2 (en) * 2003-04-29 2004-11-03 Infineon Technologies AG Multifunction support for substrat
JP2010264551A (en) * 2009-05-15 2010-11-25 Lintec Corp Apparatus and method for transferring plate-like member
CN102672641A (en) * 2012-05-16 2012-09-19 安徽华东光电技术研究所 Assembling fixture used for electronic gun cathode control assembly and assembling method thereof
WO2018059857A1 (en) * 2016-09-28 2018-04-05 Broetje-Automation Gmbh Gripping device having a bernoulli gripping unit and a vacuum gripping unit
CN110267776A (en) * 2016-09-28 2019-09-20 布勒特耶自动控制设备有限责任公司 End effector component
EP3655352A4 (en) * 2017-07-21 2021-04-21 Electro Scientific Industries, Inc. Non-contact handler and method of handling workpieces using the same
CN112880597A (en) * 2019-12-26 2021-06-01 南京力安半导体有限公司 Method for measuring wafer flatness

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61140432A (en) * 1984-12-11 1986-06-27 Shinko Denki Kk Holder of wafer or the like
JPH02303047A (en) * 1989-05-18 1990-12-17 Shioya Seisakusho:Kk Wafer chucking and device therefor
EP1091389A2 (en) * 1999-10-08 2001-04-11 Infineon Technologies AG Bernoulli and vacuum combined gripper
EP1091389A3 (en) * 1999-10-08 2005-02-09 Infineon Technologies AG Bernoulli and vacuum combined gripper
KR100392864B1 (en) * 1999-12-22 2003-07-28 가부시키가이샤 오크세이사꾸쇼 Substrate transfer apparatus
EP1473764A2 (en) * 2003-04-29 2004-11-03 Infineon Technologies AG Multifunction support for substrat
EP1473764A3 (en) * 2003-04-29 2007-06-06 Infineon Technologies AG Multifunction support for substrat
JP2010264551A (en) * 2009-05-15 2010-11-25 Lintec Corp Apparatus and method for transferring plate-like member
CN102672641A (en) * 2012-05-16 2012-09-19 安徽华东光电技术研究所 Assembling fixture used for electronic gun cathode control assembly and assembling method thereof
WO2018059857A1 (en) * 2016-09-28 2018-04-05 Broetje-Automation Gmbh Gripping device having a bernoulli gripping unit and a vacuum gripping unit
CN109922932A (en) * 2016-09-28 2019-06-21 布勒特耶自动控制设备有限责任公司 Grabbing device with Bernoulli Jacob's picking unit and vacuum picking unit
CN110267776A (en) * 2016-09-28 2019-09-20 布勒特耶自动控制设备有限责任公司 End effector component
US11110614B2 (en) 2016-09-28 2021-09-07 Broetje-Automation Gmbh Gripping device having a Bernoulli gripping unit and a vacuum gripping unit
RU2767926C2 (en) * 2016-09-28 2022-03-22 Бретье-Аутомацион Гмбх Gripping device with bernoulli gripping unit and vacuum gripping unit
EP3655352A4 (en) * 2017-07-21 2021-04-21 Electro Scientific Industries, Inc. Non-contact handler and method of handling workpieces using the same
CN112880597A (en) * 2019-12-26 2021-06-01 南京力安半导体有限公司 Method for measuring wafer flatness

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