JPS5941867A - Electrode and forming method thereof - Google Patents
Electrode and forming method thereofInfo
- Publication number
- JPS5941867A JPS5941867A JP5320482A JP5320482A JPS5941867A JP S5941867 A JPS5941867 A JP S5941867A JP 5320482 A JP5320482 A JP 5320482A JP 5320482 A JP5320482 A JP 5320482A JP S5941867 A JPS5941867 A JP S5941867A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode member
- layer
- electrode
- auzn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000012298 atmosphere Substances 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Abstract
Description
【発明の詳細な説明】
本発明はＡｕＺｎ系電極部材と５ｉｏ２または５ｉ３１
Ｊ４系絶縁膜との密着性が向上した電極及びその形成方
法に開平るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an AuZn-based electrode member and 5io2 or 5i31
The present invention is directed toward an electrode with improved adhesion to a J4-based insulating film and a method for forming the same.
従来、Ｐ型１−ｖ族化合物半導体及びＰ型３元または４
元混晶化合物半導体のＰ型オーム性電極としてＡｕＺｎ
系合金が多く用いらノ１．できた。通常、ＡｕＺｎ系電
極の形成方法としては第１図に示すように真空中で５ｉ
０２４だは５ｉ５Ｎ４系の絶縁膜２上にＡｕＺｎ合金を
蒸着して電極部材１を形成した後、Ｈ２等の還元性雰囲
気中にて温度３〔１０°Ｃ〜５００°Ｃで熱処理してい
た。Conventionally, P-type 1-v group compound semiconductors and P-type ternary or quaternary
AuZn as a P-type ohmic electrode of original mixed crystal compound semiconductor
1. Many alloys are used. did it. Normally, the method for forming AuZn-based electrodes is as shown in Figure 1.
In 024, an AuZn alloy was vapor-deposited on the 5i5N4-based insulating film 2 to form the electrode member 1, and then heat-treated at a temperature of 3 (10° C. to 500° C.) in a reducing atmosphere such as H2.
しかし、ＡｕＺｎ系電極部月１と５ｉｏ２−または５ｉ
ｓＮ４系の絶縁膜２との密着性が弱く、デバイス加工上
電極剥離、ボンデイング不良前の問題が生じる欠点を有
していた。However, the AuZn-based electrode part 1 and 5io2- or 5i
The adhesion with the sN4-based insulating film 2 is weak, and it has the drawback of causing problems such as electrode peeling and bonding failure during device processing.
このため、これを避けるためＡｕＺｎ系箱、極材料を絶
縁膜２と密着性の良い゛醒極材料に代えたり、第２図に
示すように絶縁膜２とＡｕＺｎ系電極部材１との間にＣ
ｒ 、 Ａｕ等密着性の良い材料を挾んだ構造等が考え
られているが、コンタクト抵抗が増大する、工程が増加
し複雑となる、等の欠点を有し、電極形成方法としては
あまり好ましくなかった。Therefore, in order to avoid this, the AuZn-based box and electrode material may be replaced with a material that has good adhesion to the insulating film 2, or as shown in FIG. C
A structure in which a material with good adhesion such as Au is sandwiched between layers has been considered, but it has drawbacks such as increased contact resistance and increased complexity of the process, making it less desirable as an electrode formation method. There wasn't.
本発明は前記欠点を解決し、ＡｕＺｎ系電極部材と５１
０２またはＳｉ３Ｎ４系絶縁膜との密着性を向上させた
電極とその形成方法を提供することを目的とするもので
ある。The present invention solves the above-mentioned drawbacks and combines AuZn-based electrode members and 51
An object of the present invention is to provide an electrode with improved adhesion to a 02 or Si3N4-based insulating film and a method for forming the same.
すなわち、本発明は、ＡｕＺｎ系′題極部材と５１０２
まだはＳｉ３Ｎ４系絶縁膜との界面にＺｎＯＭ−ｊたは
ＺｎＮ層が形成されると両者間の密着性が向上すること
に着目してなされたものである。That is, the present invention has an AuZn-based pole member and 5102
This method was developed based on the fact that when a ZnOM-j or ZnN layer is formed at the interface with the Si3N4-based insulating film, the adhesion between the two improves.
以下、本発明の実施例について説明する。Examples of the present invention will be described below.
まず、第１実施例について説明すると、ＡｕＺｎ系合金
を真空中で５１０２またはＳｉ！ＳＮ４系絶縁膜４上に
蒸着して電極（１１−材５を形成し、［７かる後、Ｎ２
等の不活性ガス雰囲気中にて温度４００〜５００°Ｃで
熱処理する。すると、５ｉ０２またはＳｉ３Ｎ４系絶図
に示すように絶縁族生が５１０２の場合にはＺｎ０層６
が形成され、またＮ１．５Ｎ４の場合にかよＺｎＮ層６
が形成される。First, to explain the first example, an AuZn-based alloy is prepared in vacuo using 5102 or Si! An electrode (11-material 5) is formed by vapor deposition on the SN4-based insulating film 4, and after [7, N2
Heat treatment is performed at a temperature of 400 to 500°C in an inert gas atmosphere such as . Then, as shown in the 5i02 or Si3N4 system diagram, if the insulation family is 5102, the Zn0 layer 6
is formed, and in the case of N1.5N4, the ZnN layer 6
is formed.
ＺｎＯ層、Ｚｎ’Ｎ層６は絶縁膜４とＡｕＺｎ系′１１
１！極部材５とを結びつける働きをするため、絶縁膜４
と電極部材５との密着性は大巾に向−ヒする。−また、
従来の製造設備を変更することなく単に熱処理雰囲気を
還元性ガスからＮ２ガス等の不活性ガスに変えることに
よって容易に得られるから非常に経済性にも優れている
。The ZnO layer and the Zn'N layer 6 are composed of the insulating film 4 and the AuZn-based '11.
1! The insulating film 4 serves to connect the pole member 5.
The adhesion between the electrode member 5 and the electrode member 5 is greatly improved. -Also,
It is also very economical because it can be easily obtained by simply changing the heat treatment atmosphere from a reducing gas to an inert gas such as N2 gas without changing conventional manufacturing equipment.
なお上記実施例で不活性ガス雰囲気中で熱処理するのは
、絶縁膜４上にＡｕＺｎ系合金を真空中で蒸着して電極
部材５を形成した後、Ｎ２等の還元性ガス雰囲気中にて
温度４００〜５００″Ｃで熱処理した場合には、絶縁族
生とＡｕＺｎ系電極部材５との界面に形成されたＺｎＯ
−１−たけＺｎＮ層は直ちに還元され解離して第１図と
同じ状態となり、密着性の向上には寄与しないためであ
る。In the above example, the heat treatment in an inert gas atmosphere is performed after the AuZn-based alloy is vapor-deposited on the insulating film 4 in vacuum to form the electrode member 5, and then heated in a reducing gas atmosphere such as N2. When heat-treated at 400 to 500"C, the ZnO formed at the interface between the insulation group and the AuZn-based electrode member 5
This is because the -1-thick ZnN layer is immediately reduced and dissociated, resulting in the same state as shown in FIG. 1, and does not contribute to improving adhesion.
また５ｉｏ２またはＳｉ３Ｎ、系絶縁膜ヰ上にＡｕを真
空中で蒸着して電極部材５を形成した後、１１２等の不
活性ガス雰囲気中にて温度４００〜５００°Ｃで熱処理
しても前記絶縁膜４と電極部材５との密着性の向上は認
められない。Furthermore, even if the electrode member 5 is formed by vapor-depositing Au on a 5io2 or Si3N-based insulating film in a vacuum, and then heat-treated at a temperature of 400 to 500°C in an inert gas atmosphere such as 112, the insulation film is No improvement in the adhesion between the membrane 4 and the electrode member 5 was observed.
次に第２実施例について説明する。この実施例は還元性
ガス雰囲気中下においてもＺｎＯ層またはＺｎＮ層を形
成することができるようにしたものであって、絶縁膜４
上にＡｕＺｎ系合金を真空中で蒸着して電極部材５を形
成した後、Ｃｒ 、 Ｎｉ 、Ｔｉ等の高融点金属７を
’ｉ！ｊ、 （５部材５の表面に蒸着し、しかる後Ｎ２
等の還元性ガス雰囲気中で熱肌理した後、前記高融点金
属７をエツチング処理等で除去する。Next, a second embodiment will be described. In this embodiment, a ZnO layer or a ZnN layer can be formed even in a reducing gas atmosphere, and the insulating film 4
After forming the electrode member 5 by depositing an AuZn-based alloy on top in vacuum, a high melting point metal 7 such as Cr, Ni, Ti, etc. is deposited on the top of the electrode member 5. j, (5 Deposited on the surface of member 5, then N2
After thermal texturing in a reducing gas atmosphere such as, the high melting point metal 7 is removed by etching or the like.
この場合にはＮ２が高融点金属゛ｌに妨げられて絶縁膜
４と電極部材５の界面まで進まないため還元作用は起こ
らず、絶縁族生と′ｗｉ極部材５との界面にはＺｎ０層
６まだはＺｎ／Ｎ層６が形成され、絶縁膜４とＡｕＺｎ
系電極部材５との密着性は向上する。In this case, N2 is blocked by the high melting point metal and does not advance to the interface between the insulating film 4 and the electrode member 5, so no reduction occurs, and a Zn0 layer is formed at the interface between the insulating film and the electrode member 5. 6. Zn/N layer 6 is still formed, and insulating film 4 and AuZn
Adhesion with the system electrode member 5 is improved.
次に上記実施例による密着性向上を示す試験結果につい
て説明する。Next, test results showing improved adhesion by the above examples will be explained.
金属顕微鏡によって撮影した写真１−ａ、ｉ−ｂにおい
て白く見える円形部分が電極で黒い部分が絶縁膜である
。この試験は次のようにして行なった。まず基板上にＳ
ｉ３Ｎ４絶縁膜を形成し、その上に直径５−００ μａ
φのＡｕＺｎ合金（Ｚｎ ｉ ｏ％）を蒸着して円形の
電極部材を形成した後、写真１−ａはＮ２ガス雰囲気中
で、写真１−ｂはＮ２ガス雰囲気中で、温度４５０℃で
２分間熱処理してそれぞれの試料を作成する。次にこれ
らの試料の表面に粘着テープを貼り伺げた後、この粘着
テープを急激に引き剥がした。In photos 1-a and 1-b taken with a metallurgical microscope, the circular parts that appear white are electrodes, and the black parts are insulating films. This test was conducted as follows. First, place S on the board.
An i3N4 insulating film is formed, and a diameter of 5-00 μa is formed on it.
After forming a circular electrode member by vapor-depositing an AuZn alloy (Zn io%) of φ, photo 1-a shows it in an N2 gas atmosphere, and photo 1-b shows it in an N2 gas atmosphere at a temperature of 450°C. Each sample is prepared by heat treatment for a minute. Next, adhesive tape was applied to the surfaces of these samples, and then the adhesive tape was rapidly peeled off.
Ｎ２ガス雰囲気中で熱処理した場合は写真１−ａから明
らかなように電極部材が大部分（約９０％以上）剥離さ
れているが、 Ｎ２ガス雰囲気中で熱処理した場合は写
真ｊ−ｂのように全く剥離しておらず密着性の著しい向
上が明白である。When heat-treated in an N2 gas atmosphere, most of the electrode members (approximately 90% or more) were peeled off as shown in Photo 1-a, but when heat-treated in a N2 gas atmosphere, as shown in Photo j-b. There was no peeling at all, and it was clear that the adhesion was significantly improved.
写真２はスクラッチ法により密着性をｔ′Ｆ価した例で
、写真１で示した試料を用い、先端半径３０μ携の球形
をルたダイヤモンドグローブ（写真３はダイヤモンドグ
ローブの先端形状を示す）によって荷重１０ｇでＡｕＺ
ｎ系電極部材表１ａｉをひつかき、その痕跡を比較した
ものである。Ｎ２ガス雰囲気中で熱処理したものでは写
１ｃ２− ａのように電極部材が広く剥離されているの
に対し、Ｎ２ガス雰囲気中で熱処理したものでは写真２
−ｂのように剥離が全く生じていない。Photo 2 shows an example in which the adhesion was evaluated by t'F using the scratch method. Using the sample shown in Photo 1, a spherical diamond glove with a tip radius of 30 μm was used (Photo 3 shows the tip shape of the diamond glove). AuZ with a load of 10g
The n-type electrode material table 1ai is taken and the traces are compared. In the case heat-treated in an N2 gas atmosphere, the electrode member is widely peeled off as shown in Photo 1c2-a, whereas in the case heat-treated in a N2 gas atmosphere, the electrode member is widely peeled off as shown in Photo 2.
-B, no peeling occurred at all.
次に、ＩｎＧａＡｓＰ／工ｎＰ系半導体レーザのＰ型電
極として本発明による電極を用いた第３実施例を第５図
に示す。Next, FIG. 5 shows a third embodiment in which the electrode according to the present invention is used as the P-type electrode of an InGaAsP/nP semiconductor laser.
Ｂ１５Ｎａ絶縁膜８はＰ−ＩｎＧａＡｓＰ層９の上に形
成され、電極となる部分１０がストライプ状に工 ４゜
ツチング除去されている。Ａｕ−Ｚｎ合金電極部材１１
は絶縁膜８とＰ −ＩｎＧａＡ日Ｐ層９の上に蒸着され
た後、 Ｎ２雰囲気中４５０°Ｃで２分間熱処理を施す
と、Ｅ１１５Ｎ４絶縁膜８とＡｕ−Ｚｎ電極部材１１間
にＺｎＮ層１２が形成され、強固な密着性が得られた。A B15Na insulating film 8 is formed on a P-InGaAsP layer 9, and a portion 10 that will become an electrode is etched away by 4° in a striped pattern. Au-Zn alloy electrode member 11
After being deposited on the insulating film 8 and the P-InGaA layer 9, heat treatment is performed at 450° C. for 2 minutes in an N2 atmosphere to form a ZnN layer 12 between the E115N4 insulating film 8 and the Au-Zn electrode member 11. was formed, and strong adhesion was obtained.
この時、電極となるストライプ部分１０の構成は従来と
全く同等であるためオーミック性はまったく損なわれず
に８１ｓＮａ絶縁［βとＡｕＺｎ電極部材１１との密着
性が向上し半導体レーザのへき聞及びポンディング性が
著しく改善された。At this time, since the configuration of the striped portion 10 that becomes the electrode is completely the same as that of the conventional one, the ohmic property is not impaired at all, and the adhesion between the 81sNa insulation [β and the AuZn electrode member 11 is improved, and the gap and bonding of the semiconductor laser are improved. sex was significantly improved.
なお、図中１３はＰ−工ｎＰクラッド層、１４はＰ−工
ｎＧａＡＰ活性層、１５はＮ−工ｎＰクラッドｈれ１６
はＮ −ＩｎＰ基板、１７はＮ型電極である。In the figure, 13 is a P-type nP cladding layer, 14 is a P-type nGaAP active layer, and 15 is an N-type nP cladding layer 16.
is an N-InP substrate, and 17 is an N-type electrode.
以上説明゛したように本発明は絶縁膜と電極部材との間
にＺｎＯ層、またはＺｎＮ層を形成したので、コンタク
ト抵抗を増大させることなしに著しく密着性が向上し、
またへき聞及びボンディング性も著しく向上し、その結
果半導体部品の信頼性も向上する。As explained above, since the present invention forms a ZnO layer or a ZnN layer between an insulating film and an electrode member, adhesion is significantly improved without increasing contact resistance.
Furthermore, the clearance and bonding properties are significantly improved, and as a result, the reliability of the semiconductor component is also improved.
第１−は従来の、Ｎ２等の還元性雰囲気中で熱処理した
場合の絶縁膜とＡｕＺｎ系電極部材の断面図、第２図は
従来の、Ｃｒ 、 Ｎｉ等を絶縁膜とＡｕＺｎ系電極部
材との間に挾んで密着性を向上させた場合の断面図、第
６配本発明の第１実施例を示す断面図、第４図は本発明
の第２実施例を示す断面図、第５図は本発明の第３実施
例を示す断面図である。
写真１−ａ、１−ｂは従来例及び本発明による電極を粘
着テープ剥離法で密着性を評価した金属顕微鏡写真、写
真２−ａ、２−ｂは同様に写真３のダイヤモンドプロー
ブを用いてスクラッチ法で密着性を評価した金属顕微鏡
写真である。
ル・・・絶縁膜、５・・・電極部材、６・・・ＺｎＯ層
またはＺｎＮ層、７・・・高融点金属層。
特許 出願人 安立電気株式会社
代理人 弁モ１１士 早 川 誠 志第１図 第３
図
第５図
手続補正書（方式）
昭和５８年９月２９日
特許庁長官若杉和夫殿
１、事件の表示 昭和５７年 特許願第５３２０４号２
、発明の名称
電極とその形成方法
３、補正をする者
事件との関係 特許出願人
住所 東京都港区南麻布五丁目１０番２７号名称 （０
５７）安立電気株式会社
代表者 １） 島 −部
４、代 理 人 〒１０５ 電話４３５−４７０２住
所 東京都港区新橋４−２４−３
昭和５８年８月１０日（発送日：昭和５８年８月５０日
）６、補正の対象
明細書の［４、図面の簡単な説明」の欄７、補正の内容
明細書の第９頁の第１行目〜第５行目の「写真ｊ−ａ、
ｊ−ｂは・・・・・・・・・・・写真である。」の文を
削除する。
３１１Figure 1- is a cross-sectional view of a conventional insulating film and AuZn-based electrode member when heat treated in a reducing atmosphere such as N2, and Figure 2 is a cross-sectional view of a conventional insulating film and AuZn-based electrode member made of Cr, Ni, etc. A cross-sectional view showing the first embodiment of the present invention, FIG. 4 is a cross-sectional view showing the second embodiment of the present invention, and FIG. FIG. 3 is a sectional view showing a third embodiment of the present invention. Photos 1-a and 1-b are metallurgical micrographs of conventional electrodes and electrodes of the present invention evaluated for adhesion using an adhesive tape peeling method, and photos 2-a and 2-b are metallurgical micrographs of the electrodes of the conventional example and the present invention using the diamond probe shown in photo 3. This is a metallurgical microscope photograph in which adhesion was evaluated using a scratch method. L: Insulating film, 5: Electrode member, 6: ZnO layer or ZnN layer, 7: High melting point metal layer. Patent Applicant Anritsu Electric Co., Ltd. Agent Benmo 11th Examiner Makoto Hayakawa Figure 1 Figure 3
Figure 5 Procedural amendment (method) September 29, 1980 Kazuo Wakasugi, Commissioner of the Patent Office 1, Indication of case 1981 Patent Application No. 53204 2
, Name of the invention Electrode and its formation method 3, Relationship with the case of the person making the amendment Patent applicant address 5-10-27 Minami-Azabu, Minato-ku, Tokyo Name (0
57) Representative of Anritsu Electric Co., Ltd. 1) Shima-Department 4, Representative Address: 4-24-3 Shinbashi, Minato-ku, Tokyo 105 Phone: 435-4702 August 10, 1988 (Shipping date: August 1988) May 50th) 6. Column 7 of [4. Brief explanation of drawings] of the specification to be amended. ,
j-b is a photo. ” Delete the sentence. 311
Claims (1)
１１３Ｎ４系絶縁膜とによって構成される電極において
；前記絶縁膜に真空中でＡｕＺ ｎ系合金を蒸着してＩ
Ｌ電極部材形成し、しかる後不活性ガス雰囲気中で熱処
理して前記絶縁膜と前記電極部材との界面にＺｎＯ層ま
たはＺｎＮ層を形成することを特徴とする電極の形成方
法。 （３） ＡｕＺｎ系電極部材と５１０２または５ｉ５
Ｎ４系絶縁膜とによって構成される電極において；前記
絶縁膜に真空中でＡ、ｕＺｎ系合金を蒸着して電極部材
を形成し、しかる後Ｃｒ、 Ｎｉ 、Ｔｉ等の高融点金
属を前記電極部材表面に蒸着した後、還元性ガス雰囲気
中で熱処理して、前記絶縁膜と電極部材との界面にＺｎ
＆’１４たはＺｎＮ層を形成することを特徴とする電極
の形成方法。[Claims] (2) AuZn-based electrode member and 5io2-): or E
113N4-based insulating film; an AuZ n-based alloy is deposited on the insulating film in vacuum;
A method for forming an electrode, comprising forming an L electrode member, and then heat-treating in an inert gas atmosphere to form a ZnO layer or a ZnN layer at the interface between the insulating film and the electrode member. (3) AuZn-based electrode member and 5102 or 5i5
In an electrode composed of an N4-based insulating film; A, uZn-based alloy is deposited on the insulating film in vacuum to form an electrode member, and then a high melting point metal such as Cr, Ni, Ti, etc. is applied to the electrode member. After being deposited on the surface, Zn is heat-treated in a reducing gas atmosphere to form Zn at the interface between the insulating film and the electrode member.
&'14 A method for forming an electrode, characterized by forming a ZnN layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5320482A JPS5941867A (en) | 1982-03-31 | 1982-03-31 | Electrode and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5320482A JPS5941867A (en) | 1982-03-31 | 1982-03-31 | Electrode and forming method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5941867A true JPS5941867A (en) | 1984-03-08 |
Family
ID=12936337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5320482A Pending JPS5941867A (en) | 1982-03-31 | 1982-03-31 | Electrode and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5941867A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005129524A (en) * | 2003-10-20 | 2005-05-19 | Samsung Sdi Co Ltd | Lithium ion secondary battery |
| US7147962B2 (en) | 2000-03-30 | 2006-12-12 | Ngk Insulators, Ltd. | Lithium secondary battery and manufacturing method thereof |
| US9287588B2 (en) | 2010-01-13 | 2016-03-15 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627990A (en) * | 1979-08-14 | 1981-03-18 | Nec Corp | Formation of semiconductor ohmic electrode |
| JPS56144559A (en) * | 1980-04-10 | 1981-11-10 | Toshiba Corp | Compound semiconductor element |
| JPS57115864A (en) * | 1981-01-12 | 1982-07-19 | Toshiba Corp | Compound semiconductor device |
-
1982
- 1982-03-31 JP JP5320482A patent/JPS5941867A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627990A (en) * | 1979-08-14 | 1981-03-18 | Nec Corp | Formation of semiconductor ohmic electrode |
| JPS56144559A (en) * | 1980-04-10 | 1981-11-10 | Toshiba Corp | Compound semiconductor element |
| JPS57115864A (en) * | 1981-01-12 | 1982-07-19 | Toshiba Corp | Compound semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7147962B2 (en) | 2000-03-30 | 2006-12-12 | Ngk Insulators, Ltd. | Lithium secondary battery and manufacturing method thereof |
| JP2005129524A (en) * | 2003-10-20 | 2005-05-19 | Samsung Sdi Co Ltd | Lithium ion secondary battery |
| US9287588B2 (en) | 2010-01-13 | 2016-03-15 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing battery |
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