JPS5940449A - Bias voltage control device of electron beam machining device - Google Patents
Bias voltage control device of electron beam machining deviceInfo
- Publication number
- JPS5940449A JPS5940449A JP15220382A JP15220382A JPS5940449A JP S5940449 A JPS5940449 A JP S5940449A JP 15220382 A JP15220382 A JP 15220382A JP 15220382 A JP15220382 A JP 15220382A JP S5940449 A JPS5940449 A JP S5940449A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- bias
- circuit
- transformer
- bias voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/241—High voltage power supply or regulation circuits
Abstract
Description
【発明の詳細な説明】
この発明は、電子ビーム加工装置において、バイアス電
圧により電子ビーム電流を制御する装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a device for controlling electron beam current using a bias voltage in an electron beam processing apparatus.
従来この種の装置として第１図に示すものがあった。図
において、（１）は主電源、（２）は昇圧トランス、（
３）は高圧整流回路、（４）は尚圧平溝回路、（５）は
カソード、（６）はアノード、（７）は電子ビーム、（
８）は被加工物、（９）は補助電源、σＱはカソード（
５）の加熱電源、ａ◇は加熱電源ＯＱの絶縁トランスｃ
以下、絶縁トランス１という）、（６）は電子ビーム（
７）の電流値を制御するウェネルト電極、口は電子ビー
ム（７）の電流値を検出するシャント抵抗、σ荀はシャ
ント抵抗σ３により検出された電子ビーム（７）の電流
信号の増幅器ｃ以下、電流信号増幅器という）、θＱは
ｉｔ電子ビーム７）の電流値を定める基準電源、αＱは
電流信号増幅器α弔の出力と基準電源ｒｍの出力の加算
器、（１７１はＰＩＤ調整器、ＣＩＥ９は交流発振器、
叫はＰＩＤ調整器Ｑ？）の出力と交流発振器θ枠の出力
の乗算器、（イ）は電力増幅器、？υはバイアス整流回
路、＠はバイアス平滑回路、＠はバイアス整流回路ｃ！
ｖとバイアス平滑回路（財）の絶縁トランス（以下、絶
縁トランス２という）、（ハ）は電子ビーム（７）の電
流値を制御する電流制御装置である。A conventional device of this type is shown in FIG. In the figure, (1) is the main power supply, (2) is the step-up transformer, (
3) is a high voltage rectifier circuit, (4) is an applanation flat groove circuit, (5) is a cathode, (6) is an anode, (7) is an electron beam, (
8) is the workpiece, (9) is the auxiliary power supply, and σQ is the cathode (
5) Heating power supply, a◇ is the insulation transformer c of the heating power supply OQ
(hereinafter referred to as isolation transformer 1), (6) is the electron beam (
7) Wehnelt electrode that controls the current value, the mouth is a shunt resistor that detects the current value of the electron beam (7), σ is the amplifier c for the current signal of the electron beam (7) detected by the shunt resistor σ3, (171 is a PID regulator, CIE9 is an AC oscillator,
Is the scream PID regulator Q? ) is a multiplier for the output of the AC oscillator θ frame, (A) is a power amplifier, ? υ is a bias rectifier circuit, @ is a bias smoothing circuit, @ is a bias rectifier circuit c!
(c) is a current control device that controls the current value of the electron beam (7).
次に動作について説明する。主電源（１）の出力電圧は
昇圧トランス（２）で昇圧され、次いで高圧整流回路（
３）で整流され、さらに高圧平滑回路（４）で平滑され
てカソード（５）とアノード（６）の間に印加される。Next, the operation will be explained. The output voltage of the main power supply (1) is boosted by a step-up transformer (2), and then the high voltage rectifier circuit (
3), and is further smoothed by a high voltage smoothing circuit (4) and applied between the cathode (5) and anode (6).
−万、カソード（５）は、補助電源（９）と絶縁トラン
ス１０ηで絶縁された加熱電源ｏｎにより加熱される。- 10,000, the cathode (5) is heated by the heating power source on which is insulated from the auxiliary power source (9) by an insulation transformer 10η.
但し、加熱電源ＱＱからカソード（５）への接続は本発
明には直接関与しないので、複雑さを避けるために図中
には示していない。加熱されたカソード（５）から放出
された熱電子はカソード（５）とアノード（６）の間の
加速電圧により加速され、電子ビーム（７）となって被
加工物（８）を加工する。電子ビーム（７）の電流値は
、以下に述べる電流制御装置＠により制御される。電子
ビーム（７）の電流値はシャント抵抗時で検出され、さ
らに増幅器σ肴で増幅される。増幅器５４）の出力は電
子ビーム（７）の電流値を設定する基準電源Ｑ０の出力
と加算器ＣＩＱで突き合わされ、その差の信号はＰＩＤ
調整器復ηに入力する。ＰＩＤ調整器的の出力は交流発
振器（ト）の出力に乗算器０１Ｊにより乗算され、電力
増幅器（４）に入力する交流電圧を制御する。この信号
は電力増幅器（イ）で増幅され、絶縁トランス２峙で昇
圧かつ絶縁され、次いでノ（イアス整流回路３〃で整流
され、バイアス平滑回路（イ）で平滑されて、カソード
（５）とウェネルト電極（２）の間にバイアス電圧を印
加する。従って、電子ビーム（７〕の電流値が基準１１
Ｅ ＃ｉ ０６の電圧値に対して変化するとバイアス電
圧が変化するので、電子ビーム（７）の電流値が一定に
保たれる。However, since the connection from the heating power source QQ to the cathode (5) is not directly related to the present invention, it is not shown in the figure to avoid complexity. Thermionic electrons emitted from the heated cathode (5) are accelerated by an accelerating voltage between the cathode (5) and the anode (6), become an electron beam (7), and process the workpiece (8). The current value of the electron beam (7) is controlled by a current control device @ described below. The current value of the electron beam (7) is detected by the shunt resistor and further amplified by the amplifier σ. The output of the amplifier 54) is matched with the output of the reference power supply Q0, which sets the current value of the electron beam (7), by the adder CIQ, and the difference signal is used as a PID.
Input to the regulator feedback η. The output of the PID regulator is multiplied by the output of the AC oscillator (G) by a multiplier 01J to control the AC voltage input to the power amplifier (4). This signal is amplified by a power amplifier (A), boosted and isolated by two isolation transformers, then rectified by an IAS rectifier circuit 3, smoothed by a bias smoothing circuit (A), and then connected to a cathode (5). A bias voltage is applied between the Wehnelt electrodes (2).Therefore, the current value of the electron beam (7) is equal to the reference 11.
Since the bias voltage changes when the voltage value of E #i 06 changes, the current value of the electron beam (7) is kept constant.
従来の電子ビーム加工装置は以上の様に構成されている
ので、絶縁トランスが加熱Ｋｍ用とバイアス回路用の２
個必要であり、高圧電源装置が大形かつ高価になり、重
量も増大するなどの欠点があった。Conventional electron beam processing equipment is configured as described above, so there are two isolation transformers, one for heating Km and one for bias circuit.
However, the high-voltage power supply becomes large and expensive, and its weight also increases.
この発明は上記の様な従来のものの欠点を除去するため
になされたもので、加熱電源用の絶縁トランスの２次側
にバイアス回路用のタップを設け、バイアス電圧の制御
をパルス幅茨調された光信号を用いて行なうことにより
、１個の絶縁トランスしか必要としない電子ビーム加工
装置を提供することを目的としている。This invention was made in order to eliminate the above-mentioned drawbacks of the conventional ones.A tap for the bias circuit is provided on the secondary side of the insulation transformer for the heating power supply, and the bias voltage can be controlled by varying the pulse width. It is an object of the present invention to provide an electron beam processing apparatus that requires only one isolation transformer by performing the processing using an optical signal obtained by using an optical signal.
以下、この発明の一実施例を図について説明する。第２
図において、に）は加熱電源用とバイアス回路用の２つ
の２次側巻線を持つ絶縁トランス（以下、バイアス回路
用タップ付絶縁トランスという〕、（イ）はパルス幅変
調回路（以下、ＰＷＭ回路という）、（社）は発光ダイ
オード、に）は光フアイバーケーブル、翰は受光ダイオ
ード、（７）は受光ダイオード四の検出信号の前置増幅
器、０◇は前置増幅器図の出力信号を波形整形するコン
パレータ回路、（１）ｉ、ｉ ＰＷＭ信号の復調回路で
ある低域フィルタ回路、（至）はバイアス電圧を制御す
るパワートランジスタ、鰯は整流回路、（至）は規定の
バイアス電圧を得るためのトランス（以下、バイアス用
トランスという）である。An embodiment of the present invention will be described below with reference to the drawings. Second
In the figure, ( ) is an isolation transformer with two secondary windings for heating power supply and bias circuit (hereinafter referred to as bias circuit tapped insulation transformer), (a) is a pulse width modulation circuit (hereinafter referred to as PWM ), (company) is a light-emitting diode, (2) is an optical fiber cable, 翺 is a light-receiving diode, (7) is a preamplifier for the detection signal of light-receiving diode 4, and 0◇ is the waveform of the output signal of the preamplifier diagram. A comparator circuit for shaping, (1) i, a low-pass filter circuit that is a demodulation circuit for the i PWM signal, (to) a power transistor that controls the bias voltage, a rectifier circuit (to), and (to) obtains a specified bias voltage. (hereinafter referred to as a bias transformer).
次に動作について説明する。この発明ではバイアス回路
用タップ付絶縁トランスに）を１個用いてバイアス回路
用の電力を供給し、低電圧側からパルス幅変調された光
信号により高電圧部に配置されている回路を制御し、バ
イアス電圧を回度にする。ＰＩＤ調整器Ｑηの出力信号
はＰＷＭ回路（ホ）でパルス幅変調され、その信号は発
光ダイオード（ハ）の電流として流れ、パルス幅変調さ
れた光信号となる。Next, the operation will be explained. In this invention, power is supplied to the bias circuit by using one tapped insulation transformer for the bias circuit, and the circuit placed in the high voltage section is controlled by a pulse width modulated optical signal from the low voltage side. , set the bias voltage to degrees. The output signal of the PID regulator Qη is pulse width modulated by the PWM circuit (e), and the signal flows as a current of the light emitting diode (c), becoming a pulse width modulated optical signal.
この光信号は光フアイバーケーブル（ハ）により高電圧
部に絶縁されて伝送され、受光ダイオード（２）で受光
される。受光された光信号は前置増幅器（至）で増幅さ
れ、コンパレータ回路０］）でパルス波高値が一定にさ
れ、パルス幅変調信号が低域フィルタ回路（イ）により
復調されて直流電圧に変換され、パワートランジスタ（
至）のベースに入る。バイアス回路用タップ付絶縁トラ
ンス（ハ）の出力側に対し、パワートランジスタ曽とバ
イアス用トランス（至）は直列に接続されているので、
パワートランジスタ（至）の内部抵抗を上記のベース電
流で変化させることによってバイアス用トランス（至）
の入力電圧の制御ができる。またパワートランジスタ（
至）は一方向にしか電流を流せないため、整流回路例で
整流を行なう。また、バイアス用トランス（至）は、パ
ワートランジスタ（至）の耐電圧が数１００Ｖであり、
１００Ｖ程度で電圧制御を行なって規定のバイアス電圧
１５００〜２０００ Ｖに昇圧するための物である。バ
イアス用トランス■は絶縁電圧が１５００〜２０００Ｖ
であり、また伝送電力も数１０Ｗと小さいので、小Ｊ１
９／・ｕ：量である。電圧制御されたバイアス用トラン
ス（至）の２次側出力はバイアス整流回路にυで整流さ
れ、バイアス平滑回路（ハ）で平滑されてカソード（５
）とウェネルト成極（６）の間に印加され、電子ビーム
（７）の璽流値を制御する。バイアス電圧に要求される
制御応答時間を１０ｍ５とするとパルス幅夏調信号の基
本周波数はＩＩ（ｌ（ｚ［度必要となり、さらにＰＷＭ
回路（イ）、発光ダイオード（イ）、光ファイバーケー
ブル弼、受光ダイオード翰、前１戚増幅器に）およびコ
ンパレータ回路Ｇυの周波数ｊｔｆ）答は１００ＫＨｚ
程度必要となるが、上記の構成はこの要求を十分満足す
る。またパルス幅醍調方式を用いているため、発光ダイ
オード（ハ）・光フアイバーケーブル（ホ）および受光
ダイオード（ハ）の大きな特性のバラツキの影響を受け
なくなるので負帰還制御の安定性が良くなる。さらに雑
音等によるパルス幅変調された光（Ａ号の歪は電流制御
装置ｔｃｎのフィードバックループで補正される。This optical signal is insulated and transmitted to a high voltage section by an optical fiber cable (c), and is received by a light receiving diode (2). The received optical signal is amplified by the preamplifier (to), the pulse height value is made constant by the comparator circuit (0), and the pulse width modulated signal is demodulated by the low-pass filter circuit (a) and converted into a DC voltage. and the power transistor (
Go to the base of Since the power transistor So and the bias transformer (To) are connected in series to the output side of the tapped isolation transformer for the bias circuit (C),
By changing the internal resistance of the power transistor (to) with the above base current, a bias transformer (to) can be created.
The input voltage can be controlled. Also, the power transistor (
(to) can only allow current to flow in one direction, so rectification is performed using a rectifier circuit example. In addition, the power transistor (to) of the bias transformer (to) has a withstand voltage of several hundred V,
This is for controlling the voltage at about 100V and boosting it to a specified bias voltage of 1500 to 2000V. The bias transformer ■ has an insulation voltage of 1500 to 2000V.
In addition, the transmission power is small at several tens of W, so a small J1
9/・u: Quantity. The secondary output of the voltage-controlled bias transformer (to) is rectified by the bias rectifier circuit at υ, smoothed by the bias smoothing circuit (c), and then output to the cathode (to).
) and the Wehnelt polarization (6) to control the ripple value of the electron beam (7). If the control response time required for the bias voltage is 10m5, the fundamental frequency of the pulse width summer tone signal is II(l(z[degrees), and further PWM
The answer is 100 KHz.
However, the above configuration sufficiently satisfies this requirement. In addition, since the pulse width adjustment method is used, it is not affected by large variations in the characteristics of the light emitting diode (c), optical fiber cable (e), and light receiving diode (c), improving the stability of negative feedback control. . Furthermore, distortion of the pulse width modulated light (A) due to noise etc. is corrected by the feedback loop of the current control device tcn.
以上の様に、この発明によれば加熱電源用の絶縁トラン
スの２次側にバイアス回路用のタップを設け、バイアス
電圧の制御にパルス幅変調された光信号を用いる様に構
成したので、絶縁トランスが１つになるため装置が小形
・軽量・安価にでき光信号が光素子の特性のバラツキの
影響を受けないため負帰還制御の安定性が増す効果があ
る。As described above, according to the present invention, a tap for the bias circuit is provided on the secondary side of the insulation transformer for the heating power source, and the configuration is such that a pulse width modulated optical signal is used to control the bias voltage. Since there is only one transformer, the device can be made smaller, lighter, and cheaper, and the optical signal is not affected by variations in the characteristics of the optical elements, which has the effect of increasing the stability of negative feedback control.
第１図は従来の電子ビーム電流制御装置の構成図、第２
図はこの発明の一実施例による電子ビーム電流制御装置
の構成図である。
図中、時はシャント抵抗、ＣＩ４は増幅器、（至）は基
準電源、ＣＩｏは加算器、ａηはＰＩＤ調整器、（ホ）
はＰＷＭ回路、嬶は発光ダイオード、（至）は光フアイ
バーケーブル、（ホ）は受光ダイオード、（７）は前置
増幅器、０めはコンパレータ回路、幹は低域フィルタ回
路、（至）はパワートランジスタ、鏝は整流回路、（２
）はバイアス回路用タップ付絶縁トランス、（至）はバ
イアス用トランス、ｅｖはバイアス整流回路、に）はバ
イアス平滑回路、（ハ）は電流制御装置である。
なお、図中、同一符号は同一、または相当部分を示す〇
代理人 葛野信−
第１図Figure 1 is a configuration diagram of a conventional electron beam current control device;
The figure is a configuration diagram of an electron beam current control device according to an embodiment of the present invention. In the figure, hours are shunt resistors, CI4 is an amplifier, (to) is a reference power supply, CIo is an adder, aη is a PID regulator, (e)
is the PWM circuit, the bottom is the light emitting diode, (to) is the optical fiber cable, (e) is the light receiving diode, (7) is the preamplifier, 0 is the comparator circuit, the main is the low-pass filter circuit, (to) is the power Transistor, iron is rectifier circuit, (2
) is an isolation transformer with a tap for the bias circuit, (to) is a bias transformer, ev is a bias rectifier circuit, 2) is a bias smoothing circuit, and (C) is a current control device. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (2)
電極にバイアス電圧を印加するバイアス整流回路、この
バイアス回路に電力を供給するタップを有する陰極加熱
回路用絶縁トランス、上記バイアス電圧回路の制御系に
パルス幅変調装置、発光素子、光伝送路、受光素子およ
びパルス幅復調装置を含み電子ビーム電流を制御する負
帰還回路を備えてなる電子ビーム加工装置のバイアス電
圧制御装置。(1) In an electron beam processing device, a bias rectifier circuit that applies a bias voltage to a current control electrode of an electron gun, an insulation transformer for a cathode heating circuit having a tap that supplies power to this bias circuit, and a control system for the bias voltage circuit. A bias voltage control device for an electron beam processing device, comprising a pulse width modulator, a light emitting element, an optical transmission line, a light receiving element, and a pulse width demodulator, and a negative feedback circuit for controlling an electron beam current.
であることを特徴とする特許請求の範囲第１項記載の電
子ビーム加工装置のバイアス電圧制御装置。(2) The bias voltage control device for an electron beam processing apparatus according to claim 1, wherein the electron beam processing apparatus is an electron beam welding apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15220382A JPS5940449A (en) | 1982-08-30 | 1982-08-30 | Bias voltage control device of electron beam machining device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15220382A JPS5940449A (en) | 1982-08-30 | 1982-08-30 | Bias voltage control device of electron beam machining device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5940449A true JPS5940449A (en) | 1984-03-06 |
Family
ID=15535309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15220382A Pending JPS5940449A (en) | 1982-08-30 | 1982-08-30 | Bias voltage control device of electron beam machining device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5940449A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237653A (en) * | 1986-04-08 | 1987-10-17 | Nec Corp | Acceleration voltage power source for electron beam generator |
| EP0750332A3 (en) * | 1995-06-20 | 1998-04-15 | Carl Zeiss | Procedure for controlling the emission current of an electron source and electron source with emission current control |
| DE102007042108A1 (en) * | 2007-09-05 | 2009-03-12 | Siemens Ag | electron source |
| DE102009011642A1 (en) * | 2009-03-04 | 2010-09-09 | Siemens Aktiengesellschaft | X-ray tube with multicathode |
-
1982
- 1982-08-30 JP JP15220382A patent/JPS5940449A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237653A (en) * | 1986-04-08 | 1987-10-17 | Nec Corp | Acceleration voltage power source for electron beam generator |
| EP0750332A3 (en) * | 1995-06-20 | 1998-04-15 | Carl Zeiss | Procedure for controlling the emission current of an electron source and electron source with emission current control |
| US5808425A (en) * | 1995-06-20 | 1998-09-15 | Carl-Zeiss-Stiftung | Method for controlling the emission current of an electron source and an electron source having a control circuit for controlling the emission current |
| DE102007042108A1 (en) * | 2007-09-05 | 2009-03-12 | Siemens Ag | electron source |
| DE102007042108B4 (en) * | 2007-09-05 | 2010-02-11 | Siemens Ag | Electron source with associated measured value acquisition |
| US8026674B2 (en) | 2007-09-05 | 2011-09-27 | Siemens Aktiengesellschaft | Electron source and method for the operation thereof |
| DE102009011642A1 (en) * | 2009-03-04 | 2010-09-09 | Siemens Aktiengesellschaft | X-ray tube with multicathode |
| US8295441B2 (en) | 2009-03-04 | 2012-10-23 | Siemens Aktiengesellschaft | Multicathode X-ray tube |
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