JPS5935694A - Method for preventing formation of tin whisker - Google Patents
Method for preventing formation of tin whiskerInfo
- Publication number
- JPS5935694A JPS5935694A JP14748082A JP14748082A JPS5935694A JP S5935694 A JPS5935694 A JP S5935694A JP 14748082 A JP14748082 A JP 14748082A JP 14748082 A JP14748082 A JP 14748082A JP S5935694 A JPS5935694 A JP S5935694A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- lead
- plating
- film
- whiskers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3473—Plating of solder
Abstract
Description
【発明の詳細な説明】
この発明は、通常、防錆、防蝕、良好なはんだ付けなど
の付与させるための錫めっきにおいて、電気的短絡の原
因ともなる真性錫ウィスカの発生を防止するための方法
に関するものである。[Detailed Description of the Invention] The present invention provides a method for preventing the generation of intrinsic tin whiskers, which can cause electrical short circuits, in tin plating to provide rust prevention, corrosion protection, good soldering, etc. It is related to.
一般に、錫めっきにおいては、めっき後１週間乃至数ケ
年後に真性ウィスカが発生し、電気的に短絡して、事故
の原因となることがあった。Generally, in tin plating, true whiskers are generated one week to several years after plating, which can lead to electrical short circuits and cause accidents.
従来、この真性錫ウィスカの発生を防止するためのめっ
きとして、鉛を１〜３０％含むはんだめっき（鉛−錫合
金めっき）が施されていた。第１図に錫めっき、第２図
にはんだめっきを施した部分の断面図を示す。Conventionally, solder plating (lead-tin alloy plating) containing 1 to 30% lead has been applied as a plating to prevent the generation of intrinsic tin whiskers. FIG. 1 shows a cross-sectional view of a tin-plated portion, and FIG. 2 a solder-plated portion.
錫めっきは、第１図に示すように下地めっき膜０諺を施
した下地金属θ場のにに錫めっき膜（１υを形成したも
ので、このようにして得られためつき膜の表面からは数
日乃至数年の間に真性錫ウィスカが発生して、電気的短
絡の原因となるととがしばしばあった。As shown in Figure 1, tin plating is formed by forming a tin plating film (1υ) on a base metal θ field on which a base plating film has been applied. Intrinsic tin whiskers have often formed over a period of days to years, causing electrical shorts.
はんだめっきは、第１図の０υの錫めっき膜の代りに、
第２図のＱＩ）に示すようにはんだめっき膜を施したも
のであり、真性錫ウィスカは発生していない。しかし、
ウィスカの直径の１０倍以上のこぶ状の突起物が生じて
いた。For solder plating, instead of the 0υ tin plating film in Figure 1,
A solder plating film was applied as shown in QI in FIG. 2, and no intrinsic tin whiskers were generated. but,
A knob-like protrusion more than 10 times the diameter of the whisker was formed.
はんだめっきは、めっき膜が鉛と錫の合金から成るもの
であるから、鉛と錫の構成比を一定の範囲に保つことが
必要であり、このためには、めっき液の組成を一定の範
囲に保つ必要がある。しかし、めっき作業が進むにつれ
て、このめっき液の組成は変動するものであるから、常
時、めっき液の組成の管理をしなければならず、また、
めっき液も高価であるなどの欠点があった。In solder plating, the plating film is made of an alloy of lead and tin, so it is necessary to maintain the composition ratio of lead and tin within a certain range. need to be kept. However, as the plating process progresses, the composition of the plating solution changes, so the composition of the plating solution must be constantly controlled.
The plating solution also had drawbacks, such as being expensive.
この発明は、」二部のような従来の欠陥を除去するため
になされたもので、通常の錫めっきを施した上に、鉛の
極く薄い層を錫めっき表面に付けることにより、錫めっ
きの効果をなくすることなく、錫ウイスカ防止には、は
んだめっきと同等以上の効果を得ることのできる錫ウイ
スカ発生防止法を提供することを目的としている。This invention was made in order to eliminate the conventional defects such as "2 parts", and by applying a very thin layer of lead to the tin plating surface on top of the normal tin plating, the tin plating The purpose of the present invention is to provide a method for preventing the generation of tin whiskers that can achieve an effect equal to or greater than that of solder plating without sacrificing the effect of tin whiskers.
以下、この発明の実施例について説明する。第８図にお
いて、０３は下地金属、０■は下地めっき膜、θυは錫
めっき膜であり、Ｃ’（１１は、この錫めっき膜の上に
施された極く薄い鉛めっき膜である。Examples of the present invention will be described below. In FIG. 8, 03 is the base metal, 0■ is the base plating film, θυ is the tin plating film, and C' (11 is the extremely thin lead plating film applied on the tin plating film).
上記実施例では、下地金属に真性ウィスカの発生し易い
黄銅を用い、錫めっきには、同じく真性ウィスカの発生
し易い光沢剤を含む錫め−）き液を用いて、３μｍの厚
さのめつき膜を作成した。別に同条件の錫めっき膜の上
に０．０５〜０．５ｐｍの鉛めっきを施した。これらの
液中で作成しためつき膜中、錫めっきのみのものでは約
１ケ月で真性ウィスカが発生した。一方鉛めっきを錫め
っき上部に施しためつき膜からは２年経過後も真性ウィ
スカの発生は見られなかった。しかし、はんだめっき膜
」二に生ずる突起物は観察された。また、鉛めっきを錫
めっきの上でなく、錫めっきの下に施した場合には、鉛
めっきの効果はなく、錫めっき単独の場合と同様の真性
ウィスカの発生が観察された。In the above example, the base metal is brass, which tends to generate intrinsic whiskers, and the tin plating uses a tin plating solution containing a brightening agent that also tends to generate intrinsic whiskers. A coated film was created. Separately, 0.05 to 0.5 pm of lead plating was applied on the tin plating film under the same conditions. In the tin-plated films prepared in these solutions, true whiskers were generated in about one month. On the other hand, no true whiskers were observed from the tamped film in which lead plating was applied on top of tin plating even after two years had passed. However, protrusions formed on the solder plating film were observed. Furthermore, when lead plating was applied under the tin plating instead of on top of the tin plating, the lead plating had no effect and generation of intrinsic whiskers was observed as in the case of tin plating alone.
このようにこの発明の錫めっきの上に極く薄い鉛めっき
が存在する場合、真性ウィスカの発生を防止する効果の
あることが確認された。As described above, it has been confirmed that when a very thin lead plating is present on the tin plating of the present invention, it is effective in preventing the generation of intrinsic whiskers.
別の実施例では、錫めっき上の鉛膜を無電解めっき蒸着
、スパッタ等により、０．０５ 、０．１ 、０．８７
ｚｍの厚さに作成した。これらの錫めっきにおいても約
１．５年経過しても真性ウィスカの発生は見られず電気
めっきによる鉛膜形成と同一の効果のあることが確認さ
れた。In another example, a lead film on tin plating is deposited by electroless plating, sputtering, etc. to a thickness of 0.05, 0.1, 0.87
It was made to a thickness of zm. Even after about 1.5 years, no intrinsic whiskers were observed in these tin platings, and it was confirmed that the tin plating had the same effect as lead film formation by electroplating.
更に、また別の実施例では、イオン注入により０．０５
７ｚｍの鉛の高濃度層を錫めっき膜の表面に作成した場
合において、約１．５年経過後真性ウィスカの発生は認
められなかった。ただし、拡散により鉛高濃度層を形成
する場合、熱により行うため昇温され、昇温による防止
効果も顕著であるので、両者の防止効果によって、真性
ウィスカは生じなかったものと思われる。Furthermore, in another embodiment, 0.05
When a high concentration layer of 7zm lead was created on the surface of the tin plating film, no true whiskers were observed to occur after about 1.5 years. However, when a high lead concentration layer is formed by diffusion, the temperature is raised because it is performed using heat, and the prevention effect of the temperature increase is also significant, so it is thought that the prevention effects of both prevent the formation of true whiskers.
以上のように、この発明によれば、錫めっきと鉛薄膜を
別々に作成したので、錫めっきの利点を失うことなく、
また、めっき液の管理がはんだめっきの場合に比べて簡
単であり、更にまた、はんだめっき液のように高価なめ
つき液を使用しなくて済むので、錫ウィスカの発生防止
法として極めて有効である。As described above, according to the present invention, the tin plating and the lead thin film are created separately, so the advantages of the tin plating are not lost.
In addition, management of the plating solution is easier than in the case of solder plating, and there is no need to use an expensive plating solution like solder plating solution, so it is extremely effective as a method for preventing the generation of tin whiskers. .
第１図は通常の錫めっきを施した状態を示す断面図、第
２図は真性ウィスカ防止に効果かあるとされているはん
だめっきを施した状態を示す断面図、第３図はこの発明
にもとづき」二部に鉛めっき膜を施した状態を示す断面
図である。
図中、θυは錫めっき膜、０２は下地めっき膜、鵠は下
地金属、（３１）は鉛めっき膜である。
なお、図中、同一符号は同一または相当部分を示す。
代理人 葛 野 信 −
第１ 図
第２喝
第３図
特許庁長官殿
ｌ 事件の表示 持１ｆｉｌｌ、’： 、、５７
−１４７４８０号２、発明の名称 錫ウイスカ発
生防止法３、補正をする習
名 称（６０１） 三菱電機株式会社代表者片由仁
八部
６、補正の対象
特許請求の範囲
＋１）下地金属＄ｃ通富の錫めっきを施した後、その表
向に０．０５ ｐｍ以上の鉛薄膜を形成したことを特徴
とする錫ウイスカ発生防止法。
（２）鉛％膜は、電気めっき、無電解めっき、蒸着、ス
パッタにより形成されたことを特徴とする特許請求の範
囲第１項ｇＬ！載の錫ウイスカ発生防止法。
（３）鉛〜膜とし゛Ｃ１イオン注入、拡散により鉛濃度
の高い領域を形成したことを特徴とする特許請求の範囲
第１項記載の錫ウイスカ発生防止法。
（４）鉛薄膜としＣ１錫を５％以上含む鉛−錫合金の助
成を形成したことを特徴とする特ｒＦ ｊｉＷ求の範囲
第１項または第２項記載事項の錫ウイスカ発生防止法。Fig. 1 is a sectional view showing a state in which ordinary tin plating has been applied, Fig. 2 is a sectional view showing a state in which solder plating is applied, which is said to be effective in preventing intrinsic whiskers, and Fig. 3 is a sectional view showing a state in which this invention is applied. It is a sectional view showing a state in which a lead plating film is applied to the second part of the original. In the figure, θυ is a tin plating film, 02 is a base plating film, 02 is a base metal, and (31) is a lead plating film. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Agent Makoto Kuzuno - Figure 1 Figure 2 Figure 3 Commissioner of the Japan Patent Office Case display 1fill,': ,,57
-147480 No. 2, Title of the invention Tin whisker generation prevention method 3, Common name to be amended (601) Mitsubishi Electric Corporation Representative Katayuni 8 Department 6, Scope of patent claims to be amended + 1) Substrate metal $c communication A method for preventing the generation of tin whiskers, characterized in that after tin plating is applied, a thin lead film of 0.05 pm or more is formed on the surface thereof. (2) The lead% film is formed by electroplating, electroless plating, vapor deposition, or sputtering.gL! Method for preventing tin whisker generation. (3) A method for preventing tin whisker generation according to claim 1, characterized in that a region with a high lead concentration is formed by C1 ion implantation and diffusion as a lead film. (4) A method for preventing the generation of tin whiskers as set forth in item 1 or 2 of the scope of the request, characterized in that a lead thin film is formed with a lead-tin alloy containing 5% or more of C1 tin.
Claims (4)
に０．０５１ａη以上の鉛薄膜を形成したことを錫ウイ
スカ発生防止法。(1) A tin whisker prevention method involves forming a thin lead film of 0.051 aη or more on the surface of the base metal after applying regular tin plating.
パッタにより形成されたことを特徴とする特許請求の範
囲第１項記載の錫ウイスカ発生防止法。(2) The method for preventing tin whisker generation according to claim 1, wherein the lead thin film is formed by electroplating, electroless plating, vapor deposition, or sputtering.
高い領域を形成したことを特徴とする特許請求の範囲第
１項記載の錫ウイスカ発生防止法。(3) A method for preventing tin whisker generation according to claim 1, characterized in that a region with a high lead concentration is formed by ion implantation and diffusion as a lead thin film.
膜を形成したことを特徴とする特許請求範囲第１項また
は第２項記載率項の錫ウイスカ発生防圧法。(4) A method for preventing tin whisker generation according to claim 1 or 2, characterized in that the lead thin film is a thin film of a lead-tin alloy containing 5% or more of lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14748082A JPS5935694A (en) | 1982-08-23 | 1982-08-23 | Method for preventing formation of tin whisker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14748082A JPS5935694A (en) | 1982-08-23 | 1982-08-23 | Method for preventing formation of tin whisker |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5935694A true JPS5935694A (en) | 1984-02-27 |
Family
ID=15431343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14748082A Pending JPS5935694A (en) | 1982-08-23 | 1982-08-23 | Method for preventing formation of tin whisker |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935694A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0644713A1 (en) * | 1992-06-02 | 1995-03-22 | Ibiden Co., Ltd. | Solder-precoated wiring board and method for manufacturing the same |
| WO1996017100A1 (en) * | 1994-11-26 | 1996-06-06 | Glyco-Metall-Werke Glyco B.V. & Co. Kg | Laminated material and process for producing the same |
| US6361823B1 (en) | 1999-12-03 | 2002-03-26 | Atotech Deutschland Gmbh | Process for whisker-free aqueous electroless tin plating |
| WO2007040191A1 (en) * | 2005-10-03 | 2007-04-12 | C. Uyemura & Co., Ltd. | Method of surface treatment for the inhibition of wiskers |
| WO2010021624A1 (en) * | 2008-08-21 | 2010-02-25 | Agere Systems, Inc. | Mitigation of whiskers in sn-films |
| JP2010258218A (en) * | 2009-04-24 | 2010-11-11 | Nippon Chemicon Corp | Method for manufacturing electrolytic capacitor and electrolytic capacitor |
-
1982
- 1982-08-23 JP JP14748082A patent/JPS5935694A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0644713A1 (en) * | 1992-06-02 | 1995-03-22 | Ibiden Co., Ltd. | Solder-precoated wiring board and method for manufacturing the same |
| EP0644713A4 (en) * | 1992-06-02 | 1995-06-21 | Ibiden Co Ltd | Solder-precoated wiring board and method for manufacturing the same. |
| US5532070A (en) * | 1992-06-02 | 1996-07-02 | Ibiden Co., Ltd. | Solder-precoated conductor circuit substrate and method of producing the same |
| WO1996017100A1 (en) * | 1994-11-26 | 1996-06-06 | Glyco-Metall-Werke Glyco B.V. & Co. Kg | Laminated material and process for producing the same |
| US6361823B1 (en) | 1999-12-03 | 2002-03-26 | Atotech Deutschland Gmbh | Process for whisker-free aqueous electroless tin plating |
| US6720499B2 (en) | 1999-12-03 | 2004-04-13 | Atotech Deutschland Gmbh | Tin whisker-free printed circuit board |
| WO2007040191A1 (en) * | 2005-10-03 | 2007-04-12 | C. Uyemura & Co., Ltd. | Method of surface treatment for the inhibition of wiskers |
| JP2007100148A (en) * | 2005-10-03 | 2007-04-19 | C Uyemura & Co Ltd | Whisker-suppressive surface treating method |
| KR101310400B1 (en) * | 2005-10-03 | 2013-09-17 | 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸 | Method of surface treatment for the inhibition of wiskers |
| US8821708B2 (en) | 2005-10-03 | 2014-09-02 | C. Uyemura & Co., Ltd. | Method of surface treatment for the inhibition of whiskers |
| WO2010021624A1 (en) * | 2008-08-21 | 2010-02-25 | Agere Systems, Inc. | Mitigation of whiskers in sn-films |
| US8653375B2 (en) | 2008-08-21 | 2014-02-18 | Agere Systems, Inc. | Mitigation of whiskers in Sn-films |
| JP2010258218A (en) * | 2009-04-24 | 2010-11-11 | Nippon Chemicon Corp | Method for manufacturing electrolytic capacitor and electrolytic capacitor |
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