JPS59228648A - Method for developing photoresist - Google Patents

Method for developing photoresist

Info

Publication number
JPS59228648A
JPS59228648A JP10467583A JP10467583A JPS59228648A JP S59228648 A JPS59228648 A JP S59228648A JP 10467583 A JP10467583 A JP 10467583A JP 10467583 A JP10467583 A JP 10467583A JP S59228648 A JPS59228648 A JP S59228648A
Authority
JP
Japan
Prior art keywords
resist
pattern
mask material
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10467583A
Other languages
Japanese (ja)
Inventor
Keiichi Fukuda
啓一 福田
Toshiki Ehata
敏樹 江畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP10467583A priority Critical patent/JPS59228648A/en
Publication of JPS59228648A publication Critical patent/JPS59228648A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To form a fine pattern whose cross-section has the shape of an inverted triangle by forming a slightly soluble resist on the surface of a resist film with plasma before or after exposure and by carrying out development. CONSTITUTION:A resist 2 coated on a substrate 1 and prebaked is treated with plasma generated from gaseous CF4 to form a slightly soluble film 3 having a low velocity of dissolution in a pattern forming liq. on the surface of the resist 2. Exposure through a prescribed pattern and development are then carried out to form a fine pattern whose cross-section has the shape of an inverted convex. When this fine photoresist pattern is used as a mask material, a coating can be cut at an edge part of the mask, so a pattern for an electrode wiring film can be formed accurately. Since a removing agent permeates well the mask material, the mask material can be removed thoroughly.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、微細パターン形成において、レジストを現像
する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for developing a resist in fine pattern formation.

〔背景技術〕[Background technology]

微細パターン形成においては、マスクあるいはシリコン
基板上にレジストを塗布し、ＵＶ光、ジープＵＶ光、電
子線、Ｘ線あるいはイオン線によって露光を行った後、
現像を行ってパターンを形成する。In fine pattern formation, a resist is applied onto a mask or silicon substrate, and after exposure with UV light, Jeep UV light, electron beam, X-ray, or ion beam,
Perform development to form a pattern.

現在、配線電極膜の微細バクーン形成方法の１つにリフ
トオフ法というものがあり、半導体デバイスの微細化技
術の１つとして有望視されている。Currently, there is a lift-off method as one of the methods for forming fine backbones of wiring electrode films, and it is seen as a promising technique as one of the techniques for miniaturizing semiconductor devices.

しかし、半導体基板上に被膜形成したマスク材の断面形
状が丸みを帯びているため電極配線金属膜を被覆形成し
た際にマスクが十分にその機能を発探せず、マスク材の
エツジ部の所で電極配線膜を切断することができなくな
り、電極配線膜のバクーン形成が精度よく行えない。ま
た、マスク材の除去においても除去剤の浸透およびマス
ク材の溶出が完全に行えなくなり、電極配線膜が短絡す
る等の問題がある。However, because the cross-sectional shape of the mask material formed as a film on the semiconductor substrate is rounded, the mask cannot fully discover its function when the electrode wiring metal film is formed, and the edges of the mask material The electrode wiring film cannot be cut, and the electrode wiring film cannot be formed with high accuracy. Furthermore, when removing the mask material, the removal agent cannot completely penetrate and the mask material can be completely eluted, resulting in problems such as short-circuiting of the electrode wiring film.

また、マスク材にフォトレジストを用いる方法の中には
フォトレジストを芳香族有機化合物溶液の中に長時間浸
漬し、フォトレジストパターン断面形状が逆三角形状の
微細パターンを形成するために、フォトレジスト表面の
パターン形成液に対する溶解速度が小さくなる様変質さ
せる方法がある。しかし、この方法では工程が増加し作
業時間も増大する上に、湿式法によることから大量処理
が困難であると共に再現性を得るのが難しい。In addition, in some methods of using photoresist as a mask material, the photoresist is immersed in an aromatic organic compound solution for a long time to form a fine pattern with an inverted triangular cross section. There is a method of altering the surface so that the rate of dissolution in the pattern forming liquid becomes lower. However, this method increases the number of steps and working time, and since it is a wet method, it is difficult to process large quantities and it is difficult to obtain reproducibility.

〔発明の開示〕[Disclosure of the invention]

本発明は、上記問題を解消するためになされたもので、
プラズマガスによる処理によって、その断面プロファイ
ルが逆凸状のフォトレジストの微細パターンを形成する
方法を提供することにある。The present invention was made to solve the above problems, and
An object of the present invention is to provide a method of forming a fine pattern of photoresist having an inverted convex cross-sectional profile by treatment with plasma gas.

以下本発明について詳細を述べる。The present invention will be described in detail below.

上記１コ的を達成するための本発明の特色は逆凸状の断
面プロファイルを示すパターンを形成するために必要な
フォトレジスト表面部の難溶性レジスト部形成のために
、プラズマガスを用いてレジストの表面処理を行うこと
にある。A feature of the present invention for achieving the above first objective is that plasma gas is used to form a poorly soluble resist portion on the photoresist surface necessary for forming a pattern showing an inversely convex cross-sectional profile. The purpose is to perform surface treatment.

例えば基板上に塗布しプリベークを行ったレジストをプ
ラズマ装置内に設定し、ＣＦ４ガスを用いて、ガス圧４
　ｘ　１０−２Ｔｏｒｒ中で６０　ｓｅｃ　　間プラズ
マを発生させるとレジスト表面にパターン形成液に対す
る溶解速度の小さな膜を形成することができる。For example, a resist coated on a substrate and prebaked is set in a plasma device, and CF4 gas is used to create a resist with a gas pressure of 4.
By generating plasma for 60 seconds at x 10 -2 Torr, a film having a low dissolution rate with respect to the pattern forming solution can be formed on the resist surface.

ガス種のＣＦ、の他しジスト表面に難溶膜を形成するも
のであれば、種類は問われない。また、ガス圧、パワー
および処理時間についてもプロ七スおよび目的とするパ
ターンプロファイルに応じて最適な値を選択することが
できる。さて、レジスト表面に難溶膜を形成した後、所
定のパターンに従って露光を行い、現像を行えば、微細
パターンの断面形状は逆凸となり、このフォトレジスト
の微、４１１１パターンをマスク材として用いて、マス
クのエツジ部において、被覆を切断できる。またマスク
材除去においても電極配線膜の切断が行われているため
に問題はないのである。The type of gas is not limited to CF, as long as it forms a hardly soluble film on the surface of the resist. Moreover, the optimum values for gas pressure, power, and processing time can be selected depending on the process and the intended pattern profile. After forming a refractory film on the surface of the resist, it is exposed to light according to a predetermined pattern and developed, and the cross-sectional shape of the fine pattern becomes inversely convex.This fine, 4111 pattern of photoresist can be used as a mask material. , the coating can be cut at the edges of the mask. Furthermore, there is no problem in removing the mask material because the electrode wiring film is cut.

図１は、本発明の一つの実施例である断面形状が逆凸状
の積層形成したフ第１・レジストパターンの断面を示す
ものである。１は半導体基板、２はポジ型ホトレジスト
、３はプラズマ処理に上って形成された難溶膜である。FIG. 1 shows a cross section of a first resist pattern formed by stacking and having an inverted convex cross-sectional shape, which is an embodiment of the present invention. 1 is a semiconductor substrate, 2 is a positive photoresist, and 3 is a refractory film formed by plasma processing.

なお、この処理は、露光後、現像前に行っても良く、レ
ジスト種によれば露光後に処理を行うことにより、より
確実に逆凸形状が得られる場合がある。Note that this treatment may be performed after exposure and before development, and depending on the type of resist, performing the treatment after exposure may more reliably obtain an inverted convex shape.

パターン形成剤もこの他にアルカリ金属類、アルカリ水
溶液でもよい。The pattern forming agent may also be an alkali metal or an aqueous alkali solution.

また本発明の他の構成とには断面形状を逆凸状にパター
ン形成する限りにおいて、パターン形成別は液体にかぎ
らずガス体でも良い訳である。Further, in other configurations of the present invention, as long as the cross-sectional shape is patterned in an inverted convex shape, the type of pattern formation is not limited to liquid, but gas may also be used.

〔産業上の利用可能性〕[Industrial applicability]

以上の様に本発明は断面状が逆凸状のフォトレジストパ
ターンを形成することが出来る。As described above, according to the present invention, a photoresist pattern having an inverted convex cross section can be formed.

本発明の効果は上記以外にセラミック基板、水晶振動子
基板等に電極配線ＪＩＫのパターンを形成するのにすぐ
れた効果を有するものである。In addition to the effects described above, the present invention has excellent effects in forming electrode wiring JIK patterns on ceramic substrates, crystal resonator substrates, and the like.

【図面の簡単な説明】[Brief explanation of drawings]

図１は、本発明の一実施例を示すための図である。 ｌ・・・半導体基板 ２・・・ポジ型フォトレジスト ３・・・難溶膜 図１ FIG. 1 is a diagram showing one embodiment of the present invention. l...Semiconductor substrate 2...Positive photoresist 3... Hardly soluble film Figure 1

Claims (1)

【特許請求の範囲】[Claims] （１）基板上に塗布したレジスト膜を所定のパターンに
したがって露光した後、もしくは露光する前にプラズマ
ガスによりレジスト表面に難溶性レジストを形成した後
、現像を行ない、レジストの断面プロファイルを制御す
る事を特徴とするホトレジストの現像法。(1) After exposing a resist film coated on a substrate according to a predetermined pattern, or after forming a poorly soluble resist on the resist surface using plasma gas before exposure, development is performed to control the cross-sectional profile of the resist. A photoresist development method characterized by:
JP10467583A 1983-06-10 1983-06-10 Method for developing photoresist Pending JPS59228648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10467583A JPS59228648A (en) 1983-06-10 1983-06-10 Method for developing photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10467583A JPS59228648A (en) 1983-06-10 1983-06-10 Method for developing photoresist

Publications (1)

Publication Number Publication Date
JPS59228648A true JPS59228648A (en) 1984-12-22

Family

ID=14387043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10467583A Pending JPS59228648A (en) 1983-06-10 1983-06-10 Method for developing photoresist

Country Status (1)

Country Link
JP (1) JPS59228648A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0151408A2 (en) * 1984-02-06 1985-08-14 International Business Machines Corporation A method of forming a patterned resist mask for etching via holes in an insulating layer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53147531A (en) * 1977-05-27 1978-12-22 Mitsubishi Electric Corp Forming method for thin film pattern
JPS558013A (en) * 1978-06-30 1980-01-21 Fujitsu Ltd Semiconductor device manufacturing method
JPS5518004A (en) * 1978-07-25 1980-02-07 Toshiba Corp Etching
JPS5533035A (en) * 1978-08-28 1980-03-08 Nec Corp Forming of resist pattern shaped like inverted truncated pyramid

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53147531A (en) * 1977-05-27 1978-12-22 Mitsubishi Electric Corp Forming method for thin film pattern
JPS558013A (en) * 1978-06-30 1980-01-21 Fujitsu Ltd Semiconductor device manufacturing method
JPS5518004A (en) * 1978-07-25 1980-02-07 Toshiba Corp Etching
JPS5533035A (en) * 1978-08-28 1980-03-08 Nec Corp Forming of resist pattern shaped like inverted truncated pyramid

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0151408A2 (en) * 1984-02-06 1985-08-14 International Business Machines Corporation A method of forming a patterned resist mask for etching via holes in an insulating layer

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