JPS59214020A - Optical switch - Google Patents
Optical switchInfo
- Publication number
- JPS59214020A JPS59214020A JP8852683A JP8852683A JPS59214020A JP S59214020 A JPS59214020 A JP S59214020A JP 8852683 A JP8852683 A JP 8852683A JP 8852683 A JP8852683 A JP 8852683A JP S59214020 A JPS59214020 A JP S59214020A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- electrode
- propagation
- leakage
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3137—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光スィッチに関する。特に導波光を分岐させる
ことにより光出力をオン−オフさせる光集積回路に応用
する光スィッチに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to optical switches. In particular, the present invention relates to an optical switch applied to an optical integrated circuit that turns on and off optical output by branching guided light.
従来例の構成とその問題点
従来この種の交差する導波路を用いだ光スィッチと１−
で、ＴＩＲ（全反射型）スイッチがある。Conventional structure and problems Conventionally, optical switches using this type of intersecting waveguides and 1-
There is a TIR (total internal reflection) switch.
従来この種のＴＩＲスイッチは電気光学効果を有するＴ
１拡散型Ｌ Ｉ Ｎ ｂ Ｏｓ導波路により構成されで
いた。この構成のＴＩＲスイッチは第１図に示すように
、主導波路１１と交差する副導波路１２とからなり、上
記交差する導波路１１．１２からなる交差部１３上の鋭
角なる交差角の２等分線上に配置された一定間隔の伝搬
電極空隙１４を有する伝搬制御電極１６から構成されて
いた。このＴＩＲスイッチにおいて、伝搬制御電極１６
に電圧を印加１〜ない状態では主導波路の導波光ｔ１は
交差部１３を直進ｉ〜主導波路１１をそのまま伝搬する
。所定の電圧を印加すると伝搬電極ギャップ１４の下の
導波路の屈折率が低下し、導波光ｔ１はこの低屈折率層
との界面で全反射され副導波路へ伝搬する。具体的に述
べると、電圧が印加されていない状態では、導波光ｔ
は直進し、導波光ｔ２となる。一方、電圧印加状態では
、導波光ｔ、は交差路内で全反射され、導波光ｔ３とな
り、スイ３ ′
ノチ動作を行う。Conventionally, this type of TIR switch has an electro-optical effect.
It was composed of a 1-diffusion type L I N b Os waveguide. As shown in FIG. 1, the TIR switch with this configuration is composed of a main waveguide 11 and a sub-waveguide 12 that intersects with each other. It consisted of a propagation control electrode 16 having propagation electrode gaps 14 at regular intervals arranged on a line. In this TIR switch, the propagation control electrode 16
When no voltage is applied to 1 to 1, the guided light t1 of the main waveguide travels straight through the intersection 13 and propagates directly through the main waveguide 11. When a predetermined voltage is applied, the refractive index of the waveguide below the propagation electrode gap 14 decreases, and the guided light t1 is totally reflected at the interface with this low refractive index layer and propagates to the sub-waveguide. To be more specific, when no voltage is applied, the guided light t
travels straight and becomes guided light t2. On the other hand, when a voltage is applied, the guided light t is totally reflected within the cross-path, becomes the guided light t3, and performs a swivel 3' operation.
このような従来の光スィッチにおいては以下に示す問題
点があった。電気光学効果による屈折率変化は放電破壊
の生じ易くなる２ＫＶ／ｍｍの電界印加時でも１０ と
小さいため、全反射角となる主導波路１１と副導波路１
２との交差角を大きくすることができなかった。この交
差角は０．５〜４゜と小さいため、電圧が印加されてい
ない状態で導波光ｔ１ は交差部での導波路の構造変化
に影響を受け、全部直進せず一部副導波路へ漏洩し導波
光ｔ３となった。このため、１０ｄＢ以上の分岐比を得
ることが困難となり、スイッチング特性を充分に得るこ
とができなかった。Such conventional optical switches have the following problems. Since the refractive index change due to the electro-optic effect is as small as 10 2 even when an electric field of 2 KV/mm is applied, which tends to cause discharge breakdown, the main waveguide 11 and the sub-waveguide 1, which form the total reflection angle,
It was not possible to increase the intersection angle with 2. Since this crossing angle is as small as 0.5 to 4°, when no voltage is applied, the guided light t1 is affected by the structural change of the waveguide at the crossing point, and does not go straight at all, but partially passes through the sub-waveguide. It leaked and became guided light t3. For this reason, it became difficult to obtain a branching ratio of 10 dB or more, and it was not possible to obtain sufficient switching characteristics.
この分岐比を改善するために発明者ら／′ｉ第２図に示
す光スィッチを提案した。この光スィッチは、従来の光
スィッチに漏洩制御電極を付与し、分岐比を改善された
。すなわち、主導波路１１と副導波路１２の結合部に、
伝搬制御電極１６の一部を変形させ、主導波路に平行な
一定間隔の漏洩電極空隙２１をもつ漏洩制御電極２２を
設けた。以上の構成にすると、伝搬制御電極オフ、漏洩
制御電極オン時では、漏洩電極空隙２１下の導波路の屈
折率が電気光学効果により低下し低屈折率層を形成する
ので導波光ｔ１ の副導波路１２への漏洩光は上記低屈
折率層で全反射され漏洩することなく交差路１４を直進
し導波光ｔ３となり、特性の優れた分岐比を得ることが
出来た。また、副導波路１２へのスイッチ動作は、伝搬
制御電極オン、漏洩制御電極オフにより実行された。In order to improve this branching ratio, the inventors proposed an optical switch shown in FIG. 2. This optical switch adds a leakage control electrode to a conventional optical switch and improves the branching ratio. That is, at the coupling part between the main waveguide 11 and the sub waveguide 12,
A portion of the propagation control electrode 16 was deformed to provide a leakage control electrode 22 having leakage electrode gaps 21 at regular intervals parallel to the main waveguide. With the above configuration, when the propagation control electrode is off and the leakage control electrode is on, the refractive index of the waveguide below the leakage electrode gap 21 decreases due to the electro-optic effect and forms a low refractive index layer, so that the sub-guidance of the guided light t1 is reduced. The light leaking into the wave path 12 was totally reflected by the low refractive index layer and went straight through the crossroads 14 without leaking, becoming the waveguide light t3, making it possible to obtain a branching ratio with excellent characteristics. Further, the switching operation to the sub waveguide 12 was performed by turning on the propagation control electrode and turning off the leakage control electrode.
しかし、この構造ではまだ不充分な点を有していた。す
なわち、低電圧で導波光を全反射させるためには、伝搬
電極空隙および漏洩電極空隙の幅を２〜４μｍにするこ
とが必要である。２μｍ以下では導波光が低屈折率層を
エバノネノセント波で漏洩するため、全反射しない。ま
た、４μｍを越えると電極空隙に印加する電圧を上げな
ければ、２〜４μｍの場合と等１−い電界が得られない
。１〜たがって、導波路の幅が２Ｑμｍ以下となると、
伝搬制御電極１６と漏洩制御電極２２を交差路１３上に
構成することは不可能となる。両電極を第２図のごとく
一体化で構成すると、漏洩電極と伝搬電極との共通電極
部２３の幅は２μｍ以下となり、通常の７オトリソ加工
は難１〜くなり歩留も低下する。さらに共通電極２３の
先端は非常に細くなり、電極空隙１５．２１が交差路全
体に至らなくなり、導波路幅の広い、例えば２０μｍ以
下の場合得られた効果が充分得られないという欠点があ
った。However, this structure still had some shortcomings. That is, in order to totally reflect the guided light at a low voltage, it is necessary to set the width of the propagation electrode gap and the leakage electrode gap to 2 to 4 μm. At 2 μm or less, the guided light leaks through the low refractive index layer as an evanescent wave, and is not totally reflected. Moreover, if the thickness exceeds 4 μm, an electric field as high as that in the case of 2 to 4 μm cannot be obtained unless the voltage applied to the electrode gap is increased. 1~ Therefore, when the width of the waveguide is 2Qμm or less,
It becomes impossible to configure the propagation control electrode 16 and the leakage control electrode 22 on the intersection 13. When both electrodes are integrated as shown in FIG. 2, the width of the common electrode portion 23 between the leakage electrode and the propagation electrode becomes 2 μm or less, which makes normal 7-otolithography difficult and reduces the yield. Furthermore, the tip of the common electrode 23 becomes very thin, and the electrode gap 15.21 does not reach the entire cross-path, which has the disadvantage that the effect obtained cannot be obtained sufficiently when the waveguide width is wide, for example, 20 μm or less. .
発明者らは、上記構成の電極に改良を加え、導波路幅の
狭い導波路でも分岐比の優れ、したがって信号対雑音比
（Ｓ／Ｎ比）の優れた光スィッチを発明した。The inventors improved the electrode having the above-mentioned configuration and invented an optical switch that has an excellent branching ratio even in a waveguide having a narrow waveguide width, and therefore has an excellent signal-to-noise ratio (S/N ratio).
発明の目的
本発明は、上記従来例の有１〜ていた欠点もしくは問題
点を除去し分岐特性の良好な光スィッチを提供すること
を目的とする。OBJECTS OF THE INVENTION It is an object of the present invention to provide an optical switch with good branching characteristics by eliminating the drawbacks or problems of the above-mentioned conventional examples.
発明の構成
本発明の光スィッチは、主導波路と、上記主導波路と交
差する副導波路と、上記副導波路の形成する交差路上の
鋭角なる交差角の２等分線上に配置された一定間隔の伝
搬電極空隙を有する伝搬制御電極と、上記交差路におい
て上記主導波路の導波光のうち上記副導波路へ漏洩する
漏洩光を制御する一定間隔の漏洩電極空隙を有する漏洩
制御電極とを有し、上記漏洩電極空隙を上記伝搬電極空
隙に平行に上記交差路近傍の少なくとも上記副導波路上
に配置したものである。Structure of the Invention The optical switch of the present invention includes a main waveguide, a sub-waveguide that intersects the main waveguide, and a predetermined interval arranged on the bisector of an acute intersection angle on the intersection formed by the sub-waveguide. a propagation control electrode having a propagation electrode gap of , and a leakage control electrode having a leakage electrode gap at a constant interval for controlling leakage light leaking to the sub waveguide out of the guided light of the main waveguide at the intersection. , the leakage electrode gap is arranged parallel to the propagation electrode gap on at least the sub waveguide near the intersection.
以下に本発明につ−て図を用いて説明する。The present invention will be explained below with reference to the drawings.
第３図は本発明にかかる光スィッチの構造を示す。同図
において本発明にかかる光スィッチは、主導波路１１と
上記主導波路１１と交差する副導波路１２と、上記副導
波路１１．１２の形成する交差路１３上の鋭角なる交差
角の二等分線上に配置された一定間隔の伝搬電極空隙１
４を有する伝搬制御電極３１と、上記交差路１３におい
て上記主導波路１１の導波光のうち上記副導波路１２へ
漏洩する漏洩光を制御する一定間隔の漏洩電極空隙３２
を有する漏洩制御電極３３とからなり、上記漏洩電極空
隙３２は伝搬電極空隙１４に平行に上記交差路１３近傍
の少なくとも副導波路上に配置されている。FIG. 3 shows the structure of an optical switch according to the present invention. In the same figure, the optical switch according to the present invention has a main waveguide 11, a sub-waveguide 12 that intersects with the main waveguide 11, and an acute intersection angle between the sub-waveguides 11 and 13 formed by the sub-waveguides 11 and 12. Propagation electrode gaps 1 at regular intervals arranged on a segment line
4, and leakage electrode gaps 32 at regular intervals for controlling leakage light leaking to the sub waveguide 12 out of the guided light of the main waveguide 11 at the intersection 13.
The leakage electrode gap 32 is arranged parallel to the propagation electrode gap 14 at least on the sub-waveguide near the intersection 13.
従来、このようが構成では伝搬電極空隙１４に漏洩電極
空隙３２が平行なので、漏洩電極空隙３２に電界を印加
１〜電気光学効果により漏洩電極空隙下の導波路に低屈
折率層を形成し、主導波路１１の導波光ｔ１のうち副導
波路１２への漏洩光は上記低屈折率層で全反射されるが
、幾何学的配置が主導波路１１へ漏洩先金て戻るように
なっていないので分岐比が充分改善されないと考えられ
ていた。しかし、発明者らは本発明にかかる構造におい
ても、伝搬電極空隙１４に電界を印加せず、漏洩電極空
隙３２にのみ電界を印加すると、主導波路１１の導波光
ｔ、は副導波路１２に漏洩することなく伝搬することを
見い出ｊ〜、新規の光スィッチを発明１〜た。すなわち
、動作原理の詳細は明確になっていないが、漏洩電極空
隙３２下の導波路に形成された低屈折率層により、導波
光ｔ１のうちの漏洩成分が低下し、屈折率の高い主導波
路内へ導波光が閉じ込められ、副導波路へ漏洩すること
なく伝搬するもの古考えられる。Conventionally, in such a configuration, since the leaky electrode gap 32 is parallel to the propagation electrode gap 14, an electric field is applied to the leaky electrode gap 32. A low refractive index layer is formed in the waveguide under the leaky electrode gap by the electro-optic effect. Of the guided light t1 of the main waveguide 11, the leakage light to the sub-waveguide 12 is totally reflected by the low refractive index layer, but the geometric arrangement is not such that the leakage light returns to the main waveguide 11. It was thought that the branching ratio would not be improved sufficiently. However, even in the structure according to the present invention, the inventors found that when an electric field is not applied to the propagation electrode gap 14 but only to the leakage electrode gap 32, the guided light t of the main waveguide 11 is transferred to the sub waveguide 12. We discovered that light propagates without leakage and invented a new optical switch. That is, although the details of the operating principle are not clear, the low refractive index layer formed in the waveguide below the leaky electrode gap 32 reduces the leakage component of the guided light t1, and the main waveguide with a high refractive index It is thought that the guided light is confined inside and propagates without leaking to the sub waveguide.
本発明にかかる構造を詳細に検討した結果、導波路幅に
最適の範囲のあることを見い出１−だ。すなわち、導波
路幅４〜２０μｍが最適である。４μｍ以下では、電極
空隙が２〜４μｍが適当なので、本構成を実現すること
が不可能であ°る。又、２膜μｍを越えると、従来例で
示した構造が実現可能である。さらに、本発明の構造で
は従来例よりも分岐比を向上させることができなかった
。これは、従来例と異なり全反射視像を用いていないた
めと考えられる。特に導波路幅が４〜１０μｍで分岐比
改善が優れており、分岐比２０ｄＢ以上が実現された。As a result of a detailed study of the structure according to the present invention, it was found that there is an optimum range for the waveguide width. That is, a waveguide width of 4 to 20 μm is optimal. If the electrode gap is less than 4 μm, it is impossible to realize this configuration because the appropriate electrode gap is 2 to 4 μm. Furthermore, if the thickness exceeds 2 μm, the structure shown in the conventional example can be realized. Furthermore, with the structure of the present invention, it was not possible to improve the branching ratio compared to the conventional example. This is considered to be because, unlike the conventional example, a total internal reflection visual image is not used. In particular, when the waveguide width was 4 to 10 μm, the branching ratio was improved, and a branching ratio of 20 dB or more was achieved.
したがって、本発明にかかる構造においては、伝搬制御
電極３１１，３１２に電圧を印加せず、漏洩制御電極３
１１，３３１に所望の電圧を印加した場合、主導波路１
１の導波光ｔ１は副導波路１２へ漏洩せず、そのまま主
導波路を伝搬する。Therefore, in the structure according to the present invention, no voltage is applied to the propagation control electrodes 311 and 312, and the leakage control electrode 3
When a desired voltage is applied to 11,331, the main waveguide 1
The guided light t1 of 1 does not leak to the sub waveguide 12 and propagates through the main waveguide as it is.
一方、伝搬制御電極３１１，３１２に電圧を印加し、漏
洩制御電極３１１．３３１の電圧を印加させない場合、
導波光ｔ１は伝搬電極空隙１３下に形成された低屈折率
層で全反射され、副導波路１２９ ／ ζ
へ導波光ｔ３となって伝搬する。以上のような電圧印加
を加えることにより、導波光ｔ１ をスイッチ動作させ
ることができた。分岐比２０ｄＢ、消光比２０ｄＢを実
現させることができ、Ｓ／Ｎ比の優れた光スィッチを可
能と１〜だ。On the other hand, when applying voltage to the propagation control electrodes 311 and 312 and not applying voltage to the leakage control electrodes 311 and 331,
The guided light t1 is totally reflected by the low refractive index layer formed under the propagation electrode gap 13, and propagates to the sub waveguide 129/ζ as the guided light t3. By applying the voltage as described above, the guided light t1 could be operated as a switch. It is possible to achieve a branching ratio of 20 dB and an extinction ratio of 20 dB, making it possible to create an optical switch with an excellent S/N ratio.
上記構成の光スィッチにおいて、第３図に示す主導波路
１１と副導波路１２との間に構成上の差異はなく、１１
を副導波路に、１２を主導波とすることができる。この
構成において、スイッチ動作は以下のようになる。すな
わち、伝搬制御電極３１１．３１２に電圧を印加せず、
漏洩制御電極３１２．３３２に電圧を印加した場合、導
波光ｔ４の副導波路の漏洩光は漏洩電極空隙３４下に電
気光学効果により形成された低屈折率層により主導波路
に戻されるので、漏洩することなく伝搬し導波光ｔ３と
なる。一方、伝搬制御電極３１１゜３１２に電圧を印加
し、漏洩制御１篭極３１２゜３３２に電圧を印加させな
い場合、導波光ｔ４は伝搬電極空隙１３下に電気光学効
果により形成された低屈折率層で全反射され、副導波路
１１を伝１ｏ・−ノ
搬する導波光ｔ２となシスイッチ動作を行う。In the optical switch having the above configuration, there is no difference in configuration between the main waveguide 11 and the sub waveguide 12 shown in FIG.
can be used as a sub-waveguide, and 12 can be used as a main waveguide. In this configuration, the switch operation is as follows. That is, without applying voltage to the propagation control electrodes 311 and 312,
When a voltage is applied to the leakage control electrodes 312 and 332, the leakage light of the guided light t4 from the sub-waveguide is returned to the main waveguide by the low refractive index layer formed under the leakage electrode gap 34 by the electro-optic effect, so that the leakage is prevented. The light propagates without any movement and becomes guided light t3. On the other hand, when a voltage is applied to the propagation control electrodes 311° 312 and no voltage is applied to the leakage control 1 gating electrode 312° 332, the guided light t4 passes through the low refractive index layer formed under the propagation electrode gap 13 by the electro-optic effect. The guided light t2 is totally reflected and propagates through the sub-waveguide 11, performing a switching operation.
１−たがって、本発明の光スィッチは主導波路および副
導波路の区別なく形成され、しかも電極も一部共通に使
用するので、簡単な構成で高性能な光スィッチが実現で
きた。1- Therefore, in the optical switch of the present invention, the main waveguide and the sub-waveguide are formed without distinction, and some electrodes are also used in common, so a high-performance optical switch can be realized with a simple configuration.
実施例の説明
以下本発明について、実施例をあげて具体的に説明する
。DESCRIPTION OF EMBODIMENTS The present invention will be specifically described below with reference to Examples.
本発明の実施例を第３図により具体的に説明する０たと
えば、電気光学効果の大きい材料であるＬｉＮｂＯ３単
結晶において、表面が平滑なＹ−カットＬ ｉＮ ｂ
Ｏ３単結晶基板３６上に深さ１μｍＳ度のＴｉ拡散層か
らなる線路幅２０μｍの交差する２本の導波路を、導波
路の鋭角なる交差角の２等分線がＬ ｉ Ｎ ｂ Ｏ３
単結晶のＸ軸方向に形成１−１主光導波路１１および副
導波路１２とし、次に電極と導波路とが直接接すると導
波光の伝搬損失が増加するので、バッファ層として膜厚
０．２μｍのｂ １０２膜をスパッタ法で蒸着した。次
に、上記交差部１３に膜厚０．１μｍ 、空隙幅４μｍ
の伝搬制１１′
両電極３１および漏洩制御電極３３をＡ４の真空蒸着お
よびリフトオフの技術で形成し、光スィッチとする。以
上の構成において、電極３１１゜３１２．３３２は等電
位とし、３１１と３３１との間に電圧を例えば１０Ｖ／
μｍの電界で、印加すると、漏洩電極空隙３２下の導波
路中に低屈折率を形成すると、主導波路１１の導波路光
ｔ１ は副導波路１２に漏洩することなく直進ｔ−だ。Embodiments of the present invention will be specifically explained with reference to FIG. 3. For example, in LiNbO3 single crystal, which is a material with a large electro-optic effect,
Two intersecting waveguides with a line width of 20 μm made of a Ti diffusion layer with a depth of 1 μm S degrees on an O3 single crystal substrate 36 are formed so that the bisector of the acute intersection angle of the waveguides is L i N b O3
1-1 main optical waveguide 11 and sub-waveguide 12 are formed in the X-axis direction of the single crystal, and then the propagation loss of the guided light increases if the electrode and the waveguide are in direct contact with each other. A 2 μm b 102 film was deposited by sputtering. Next, at the intersection 13, a film thickness of 0.1 μm and a gap width of 4 μm are applied.
Propagation control 11' Both electrodes 31 and leakage control electrode 33 are formed by A4 vacuum evaporation and lift-off techniques to form an optical switch. In the above configuration, the electrodes 311, 312, and 332 are at equal potential, and a voltage of, for example, 10 V/3 is applied between 311 and 331.
When an electric field of μm is applied to form a low refractive index in the waveguide below the leaky electrode gap 32, the waveguide light t1 of the main waveguide 11 travels straight t- without leaking to the sub waveguide 12.
この場合、分岐比は、２０ｄＢ以上を得ることができた
。スイッチ動作させる場合、電極３１１，３３１を等電
位にし、電極３１２．３３２を等電位とし、電極３１１
と３１２との間に電圧を、例えば１゜７７μｍの電界で
、印加させると、導波光ｔ１は伝搬電極空隙１３下の導
波路中に形成された低屈折率層で全反射され、導波光ｔ
３となる。この場合、分岐比は２ｏｄＢ以上得られた。In this case, a branching ratio of 20 dB or more could be obtained. When operating the switch, the electrodes 311 and 331 are made to have an equal potential, the electrodes 312 and 332 are made to be made to have an equal potential, and the electrodes 311 and 331 are made to have an equal potential.
When a voltage is applied, for example, with an electric field of 1° 77 μm between
It becomes 3. In this case, a branching ratio of 2 odB or more was obtained.
本実施例ではＴｉ拡散型Ｌ Ｉ Ｎ ｂ Ｏｓ導波路を
用いて説明したが、本発明の構造において光導波路は電
気光学効果の大きい材料であればよく、Ｌ ｉＮ ｂ
Ｏ３に限定されるものでない。例えば、ＬｉＴａＯ２，
ＰＬＺＴ、ＢＧＯ，ＧａＡｓ などでも同様な効果を示
す。Although this embodiment has been described using a Ti-diffused L I N b Os waveguide, the optical waveguide in the structure of the present invention may be made of any material that has a large electro-optic effect;
It is not limited to O3. For example, LiTaO2,
PLZT, BGO, GaAs, etc. also exhibit similar effects.
発明の効果
以上のように本発明は光スィッチの交差部に漏洩制御電
極の構造に工夫を加え、分岐特性を改善１−たものであ
る。本発明において、単に導波路上に設けられた電極に
所定の電圧を印加することにより、導波光の直進時には
副導波路へ漏洩せず、又反射時に副導波路へ全て伝搬す
るので、分岐比の優れた光スィッチが得られる。さらに
、消光比の良好な光スィッチが実現される。したがって
、本発明の光スィッチを用いると、導波光の漏洩の少な
い光スィッチを構成することができ、スイッチ特性の優
れた光スィッチが実現できるものである。Effects of the Invention As described above, the present invention improves the branching characteristics by improving the structure of the leakage control electrode at the intersection of the optical switch. In the present invention, by simply applying a predetermined voltage to the electrodes provided on the waveguide, the guided light does not leak to the sub-waveguide when it travels straight, and all propagates to the sub-waveguide when it is reflected, so the branching ratio is An excellent optical switch is obtained. Furthermore, an optical switch with a good extinction ratio can be realized. Therefore, by using the optical switch of the present invention, an optical switch with less leakage of guided light can be constructed, and an optical switch with excellent switching characteristics can be realized.
第１図は従来の全反射型光スイッチの要部平面図、第２
図は発明者らの提案にかかる全反射型光スイッチの要部
平面図、第３図は本発明にかかる実施例の光スィッチの
要部平面図である。
１３′・ ：ｆ
１１・・・・・・主導波路、１２・・・・・・副導波路
、１３・・・・・・交差部、１４・・・・・・伝搬電極
空隙、３１・・・・・・伝搬制御電極、３２・・・・・
・漏洩電極空隙、３３・・・・・・漏洩制御電極、３４
・・・・・・漏洩電極空隙。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
４
第２図
１５ Ｚ３ ２／ ２２Figure 1 is a plan view of the main parts of a conventional total reflection type optical switch, Figure 2
The figure is a plan view of a main part of a total reflection type optical switch proposed by the inventors, and FIG. 3 is a plan view of a main part of an optical switch according to an embodiment of the present invention. 13':f 11...Main waveguide, 12...Sub waveguide, 13...Intersection, 14...Propagation electrode gap, 31... ...Propagation control electrode, 32...
・Leakage electrode gap, 33...Leakage control electrode, 34
...Leakage electrode gap. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 4 Figure 2 15 Z3 2/22
Claims (1)
両溝波路の形成する交差路上の鋭角なる交差角の２等分
線上に配置された一定間隔の伝搬電極空隙を有する伝搬
制御電極と、上記交差路において上記主導波路の導波光
のうち上記副導波路へ漏洩する漏洩光を制御する一定間
隔の漏洩電極空隙を有する漏洩制御電極とを有し、上記
漏洩電極空隙を上記伝搬電極空隙に平行に上記交差路近
傍の少なくとも上記副導波路上に配置したことを特徴と
する光スィッチ。a main waveguide, a sub-waveguide that intersects with the main waveguide, and a propagation control electrode having propagation electrode gaps arranged at constant intervals on a bisector of an acute intersection angle on the intersection formed by the double-groove waveguide; , a leakage control electrode having a leakage electrode gap at a constant interval for controlling leakage light that leaks to the sub waveguide out of the waveguide light of the main waveguide at the intersection, and the leakage electrode gap is connected to the propagation electrode gap. An optical switch, characterized in that the optical switch is arranged parallel to at least the sub-waveguide near the intersection.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8852683A JPS59214020A (en) | 1983-05-19 | 1983-05-19 | Optical switch |
| US06/667,480 US4715680A (en) | 1983-02-10 | 1984-02-10 | Optical switch |
| EP84900750A EP0137851B1 (en) | 1983-02-10 | 1984-02-10 | Optical switch |
| DE8484900750T DE3482287D1 (en) | 1983-02-10 | 1984-02-10 | OPTICAL SWITCH. |
| PCT/JP1984/000039 WO1984003155A1 (en) | 1983-02-10 | 1984-02-10 | Optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8852683A JPS59214020A (en) | 1983-05-19 | 1983-05-19 | Optical switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59214020A true JPS59214020A (en) | 1984-12-03 |
Family
ID=13945279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8852683A Pending JPS59214020A (en) | 1983-02-10 | 1983-05-19 | Optical switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59214020A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6810176B2 (en) | 2000-08-07 | 2004-10-26 | Rosemount Inc. | Integrated transparent substrate and diffractive optical element |
| US6987901B2 (en) | 2002-03-01 | 2006-01-17 | Rosemount, Inc. | Optical switch with 3D waveguides |
| US7003187B2 (en) | 2000-08-07 | 2006-02-21 | Rosemount Inc. | Optical switch with moveable holographic optical element |
-
1983
- 1983-05-19 JP JP8852683A patent/JPS59214020A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6810176B2 (en) | 2000-08-07 | 2004-10-26 | Rosemount Inc. | Integrated transparent substrate and diffractive optical element |
| US7003187B2 (en) | 2000-08-07 | 2006-02-21 | Rosemount Inc. | Optical switch with moveable holographic optical element |
| US6987901B2 (en) | 2002-03-01 | 2006-01-17 | Rosemount, Inc. | Optical switch with 3D waveguides |
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