JPS59211261A - Long close type image sensor - Google Patents
Long close type image sensorInfo
- Publication number
- JPS59211261A JPS59211261A JP58085068A JP8506883A JPS59211261A JP S59211261 A JPS59211261 A JP S59211261A JP 58085068 A JP58085068 A JP 58085068A JP 8506883 A JP8506883 A JP 8506883A JP S59211261 A JPS59211261 A JP S59211261A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- emitting element
- thin film
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明はファクシミリや光学文字読取装置等に用いられ
る長尺密着型イメージセンサに関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a long contact type image sensor used in facsimiles, optical character reading devices, and the like.
従来技術と問題点
従来よりファクシミリや光学文字読取装置などの画像入
力装置には原稿からの情報を光電変換する多数の受光素
子を１列に配置した長尺密着型イメージセンサが用いら
れている。BACKGROUND OF THE INVENTION Conventionally, image input devices such as facsimile machines and optical character readers have used long contact type image sensors in which a large number of light-receiving elements for photoelectrically converting information from a document are arranged in a row.
第１図はこの長尺密着型イメージセンサの構造を示す図
であり、同図において、１は光源、２は導光系、３は受
光素子アレイをそれぞれ示１．ている。FIG. 1 is a diagram showing the structure of this long contact type image sensor. In the figure, 1 is a light source, 2 is a light guiding system, and 3 is a light receiving element array. ing.
このイメージセンサは光源１から出た光で原稿４を照射
すると、原稿４からは白黒の模様を含んだ情報として反
射され、この光はライトフォーカシングロッドレンズア
レイと呼ばれる導光系２で受光素子アレイ３上に正立同
倍の像を結び、受光素子アレイ３は受光した光量の大小
を光電流の大小に光電変換して原稿の読み取りを行なう
ようになっている。In this image sensor, when a document 4 is irradiated with light emitted from a light source 1, it is reflected from the document 4 as information containing a black and white pattern, and this light is passed through a light guide system 2 called a light focusing rod lens array to a light receiving element array. The light receiving element array 3 forms an erect image of the same magnification on the image sensor 3, and the light receiving element array 3 photoelectrically converts the magnitude of the received light amount into the magnitude of a photocurrent, thereby reading the document.
このような、ライトフォーカシングロッドレンズアレイ
を導光系として用いる長尺密着型イメージセンサは、ラ
イトフォーカシングロッドレンズアレイが光ファイバを
用いていることから原稿センサ間の光路長が長くなり、
そのため大型となり易く、且つ光の利用効率が高々３％
と少なくなるという欠点があった。In such a long contact type image sensor that uses a light focusing rod lens array as a light guiding system, since the light focusing rod lens array uses an optical fiber, the optical path length between the document sensors becomes long.
Therefore, it tends to be large, and the light usage efficiency is at most 3%.
There was a drawback that the amount decreased.
発明の目的
本発明は上記従来の欠点に鑑み、小型化が可能であり、
且つ光の使用効率の高い長尺密着型イメージセンサを提
供することを目的とするものである。Purpose of the Invention In view of the above-mentioned conventional drawbacks, the present invention enables miniaturization,
Another object of the present invention is to provide a long contact type image sensor with high light usage efficiency.
発明の構成
そしてこの目的は本発明によれば、基板と、該基板の上
に形成された受光素子アレイと、該受光素子アレイを覆
い且つその受光部に対応した位置にＶ形又は台形の溝を
有する透明絶縁膜と、該溝の側面に設けた薄膜型発光素
子とを具備し、て構成されたことを特徴とする長尺密着
型イメージセンサを提供することによって達成される。According to the present invention, a substrate, a light-receiving element array formed on the substrate, and a V-shaped or trapezoidal groove covering the light-receiving element array and at a position corresponding to the light-receiving portion thereof are provided. This is achieved by providing an elongated contact type image sensor characterized by comprising a transparent insulating film having a structure of 100% and a thin film type light emitting element provided on the side surface of the groove.
発明の実施例 以下本発明実施例を図面によって詳述する。Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.
第２図は本発明による長尺密着型イメージセンサを説明
するための図である。同図において、１０は基板、１１
は受光素子アレイ、１２はそのリード線、１３は透明絶
縁膜、１４は台形溝、１５はＥＬ発光素子、１６はその
リード線、１７は原稿面をそれぞれ示している。FIG. 2 is a diagram for explaining a long contact type image sensor according to the present invention. In the figure, 10 is a substrate, 11
12 is a light receiving element array, 12 is a lead wire thereof, 13 is a transparent insulating film, 14 is a trapezoidal groove, 15 is an EL light emitting element, 16 is a lead wire thereof, and 17 is a document surface.
本実施例は、基板ｌＯにガラス、エポキシ、セラミック
等のプリント板を用い、該基板１０の上に公知の従来方
法で受光素子アレイ１１を形成し７、その上にＳｔＯ，
、エポキシ等の透明絶縁膜１３を形成し、この絶縁膜１
３の受光素子アレイの受光部に対応した位置にＶ形又は
台形の溝１４を形成し、この溝へ片側又は両側面に薄膜
型発光素子としてＥＬ発光素子１５を形成したものであ
る。In this embodiment, a printed board made of glass, epoxy, ceramic, etc. is used as the substrate 10, and a photodetector array 11 is formed on the substrate 10 by a known conventional method.
, a transparent insulating film 13 made of epoxy or the like is formed, and this insulating film 1
A V-shaped or trapezoidal groove 14 is formed at a position corresponding to the light receiving portion of the light receiving element array No. 3, and an EL light emitting element 15 is formed as a thin film type light emitting element on one or both sides of this groove.
なお透明絶縁膜１３へのＶ形又は台形の溝１４の形成は
例えば透明絶房膜がＳ１０．の場合には膜の下部から上
部へ向ってエツチング速度が早くなるような成膜条件で
成膜後エツチングする公知の方法を用いれば良く、また
ＥＬ発光素子１５は薄膜形成技術を用いて形成すること
ができる。さらにこのＥＬ発光素子の上に異なった屈折
率を持つ光学薄膜を多層形成し集光性を高めることもで
きる。The V-shaped or trapezoidal grooves 14 are formed in the transparent insulating film 13, for example, in step S10. In this case, a known method of etching after film formation under film formation conditions such that the etching rate increases from the bottom to the top of the film may be used, and the EL light emitting element 15 may be formed using a thin film formation technique. be able to. Furthermore, it is also possible to form multiple layers of optical thin films having different refractive indexes on this EL light emitting element to improve light convergence.
このような本実施例は、より細かいホトリソグラフィ工
程を必要とする受光素子アレイ１１は基板１０が平面の
状態のときに行なうことができ、またＥＬ発光素子１５
は側面でのパターニングが不要であるため多層蒸着で容
易に作成できる。さらに本実施例の使用に際しては、原
稿面１７に密着して用いることができるので原稿面１７
がら受光素子アレイ１１間の光路長が著しく短がくなり
、そのため小型化及び光の使用効率の向上（１０％以上
）が得られる。In this embodiment, the light receiving element array 11 which requires a finer photolithography process can be formed when the substrate 10 is in a flat state, and the EL light emitting element 15 can be formed when the substrate 10 is in a flat state.
Since patterning on the sides is not required, it can be easily created by multilayer deposition. Furthermore, when using this embodiment, the document surface 17 can be used in close contact with the document surface 17.
However, the optical path length between the light receiving element arrays 11 is significantly shortened, resulting in miniaturization and improvement in light usage efficiency (10% or more).
発明の効果
以上、詳細に説明したように本発明の長尺密着型イメー
ジセンサは光源として薄膜型発光素子を用い受光素子ア
レイと一体化することにより光路長が短かくできるため
小型化が可能となり５且っ原稿面と密着させることがで
きるため光の利用効率が向上するといった効果大なるも
のである。Effects of the Invention As explained in detail above, the long contact type image sensor of the present invention uses a thin film type light emitting element as a light source and is integrated with a light receiving element array, thereby making it possible to shorten the optical path length and thus to be miniaturized. 5. Since it can be brought into close contact with the surface of the document, it has a great effect of improving the efficiency of light use.
第１図は従来の長尺密着型イメージセンサを説明するた
めの図、第２図は本発明による長尺密着型イメージセン
サを説明するための図である。。
図面において、１０は基板、ＩＩＶｉ受光素子アレイ、
１３は透明絶縁膜、１４は■形又は台形溝、１５はＥＬ
発光素子、１７は原稿面をそれぞれ示すＯ
特許出願人
富士通株式会社
特許出願代理人
弁理士 青 木 朗
弁理士西舘和之
弁理士内田幸男
弁理士 山 口 昭 之FIG. 1 is a diagram for explaining a conventional long contact type image sensor, and FIG. 2 is a diagram for explaining a long contact type image sensor according to the present invention. . In the drawings, 10 is a substrate, an IIVi light receiving element array,
13 is a transparent insulating film, 14 is a ■-shaped or trapezoidal groove, and 15 is an EL
Light-emitting element, 17 indicates the original surface, respectively Patent applicant Fujitsu Limited Patent agent Akira Aoki Patent attorney Kazuyuki Nishidate Patent attorney Yukio Uchida Patent attorney Akira Yamaguchi
Claims (1)
、該受光素子アレイを覆い且つその受光部に対応した位
置に■形又は台形の溝を有する透明絶縁膜と、該溝の側
面に設けた薄膜型発光素子とを具備して構成されたこと
を特徴とする長尺密着型イメージセンサ。1. A substrate, a light-receiving element array formed on the substrate, a transparent insulating film covering the light-receiving element array and having a square or trapezoidal groove at a position corresponding to the light-receiving part, and a side surface of the groove. What is claimed is: 1. A long contact type image sensor comprising: a thin film type light emitting element;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58085068A JPS59211261A (en) | 1983-05-17 | 1983-05-17 | Long close type image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58085068A JPS59211261A (en) | 1983-05-17 | 1983-05-17 | Long close type image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59211261A true JPS59211261A (en) | 1984-11-30 |
Family
ID=13848307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58085068A Pending JPS59211261A (en) | 1983-05-17 | 1983-05-17 | Long close type image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59211261A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0268455U (en) * | 1988-11-15 | 1990-05-24 | ||
| JPH0268454U (en) * | 1988-11-15 | 1990-05-24 | ||
| JP2008227836A (en) * | 2007-03-12 | 2008-09-25 | Toyota Industries Corp | Light source for scanner |
-
1983
- 1983-05-17 JP JP58085068A patent/JPS59211261A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0268455U (en) * | 1988-11-15 | 1990-05-24 | ||
| JPH0268454U (en) * | 1988-11-15 | 1990-05-24 | ||
| JP2008227836A (en) * | 2007-03-12 | 2008-09-25 | Toyota Industries Corp | Light source for scanner |
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