JPS59210652A - Temperature measuring process of semiconductor substrate - Google Patents
Temperature measuring process of semiconductor substrateInfo
- Publication number
- JPS59210652A JPS59210652A JP8528483A JP8528483A JPS59210652A JP S59210652 A JPS59210652 A JP S59210652A JP 8528483 A JP8528483 A JP 8528483A JP 8528483 A JP8528483 A JP 8528483A JP S59210652 A JPS59210652 A JP S59210652A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- substrate
- semiconductor substrate
- thermocouple
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は、半導体基板の温度測定方法に関し、特に、赤
外線を照射して半導体基板を昇温する装置における半導
体基板の温度測定方法に関するものである。[Detailed Description of the Invention] [Technical field to which the invention pertains] The present invention relates to a method for measuring the temperature of a semiconductor substrate, and more particularly to a method for measuring the temperature of a semiconductor substrate in an apparatus that heats up the semiconductor substrate by irradiating infrared rays. be.
近年、イオン注入法を用いて半導体能動層を形成するに
際し、イオン注入後のアニールとして、従来の電気炉に
よる等温、長時間のアニールに代わって、赤外線を照射
し、急激に昇降温させて非常に短時間のアニール方法の
実用化への検討が感発に行なわれている。In recent years, when forming a semiconductor active layer using the ion implantation method, instead of the conventional isothermal, long-term annealing in an electric furnace, the annealing after ion implantation is performed using infrared rays to rapidly raise and lower the temperature. The practical application of short-time annealing methods is now being studied.
本赤外線を用いた短時間アニール方法の利点は、非常に
アニール時間が短いために、注入された不純物がアニー
ル時に拡散しないこと、かつ、アニール時間が短いため
に、電気炉を用いたアニール法に比べてアニール温度を
より高温にすることができ、よシ高濃度キャリアの能動
層を形成できることなどであシ、従って、これらの利点
を活用することによシ、非常に浅いｐ蝶合、あるいはオ
ーム性電極用の浅い高濃度キャリア層の形成を実現でき
、集積回路の高速度化・高集積化を実現しうる０
第１図に曲線■で赤外線を用いた短時間アニール方法に
おける温度サイクルの一例を示す。第１図において、縦
軸は半導体基板温度を、横軸は時間を示す。そして温度
Ｔ、は予備加熱温度を、温度Ｔ２はアニール温度を示す
。この第１図に示すような温度サイクルは、半導体基板
温度を測定し、赤外線を発光する赤外線ランプ電源にフ
ィードバックし、赤外線ランプに加える電力を増減し、
赤外線ランプよシ発光される赤外線強度を制御すること
によル実現される。The advantage of this short-time annealing method using infrared rays is that the implanted impurities do not diffuse during annealing because the annealing time is very short, and because the annealing time is short, it is better than an annealing method using an electric furnace. In comparison, the annealing temperature can be raised to a higher temperature and an active layer with a higher concentration of carriers can be formed. It is possible to form a shallow high-concentration carrier layer for ohmic electrodes, making it possible to achieve higher speed and higher integration of integrated circuits. An example is shown. In FIG. 1, the vertical axis represents the semiconductor substrate temperature, and the horizontal axis represents time. The temperature T indicates the preheating temperature, and the temperature T2 indicates the annealing temperature. The temperature cycle shown in Figure 1 measures the temperature of the semiconductor substrate, feeds it back to the infrared lamp power source that emits infrared rays, increases or decreases the power applied to the infrared lamp, and
This is achieved by controlling the intensity of the infrared light emitted by the infrared lamp.
第１図に示すような温度サイクルを実現すること、すな
わち、非常な短時間に温度を制御するためには、半導体
基板の温度を正確に、速く、再現性よく測定する必要が
ある。まず速く測定するた熱電対を用いて正確かつ良い
再現性で温度測定をするためには、まず被測定物体に十
分に接触していること、また被測定物体と熱電対が高−
温で反応しないことが必要である。In order to realize the temperature cycle as shown in FIG. 1, that is, to control the temperature in a very short time, it is necessary to measure the temperature of the semiconductor substrate accurately, quickly, and with good reproducibility. First of all, in order to measure temperature accurately and with good reproducibility using a thermocouple that measures quickly, it is first necessary to make sufficient contact with the object to be measured, and to make sure that the object to be measured and the thermocouple are at a high temperature.
It is necessary that it does not react at high temperatures.
第２図は従来の半導体基板の温度測定方法の一例を説明
するための模式図である。FIG. 2 is a schematic diagram for explaining an example of a conventional method for measuring the temperature of a semiconductor substrate.
被測定シリコン基板４を石英板３の上に置き、赤外線ラ
ンプ１で照射して昇温させる。２は赤外線反射鏡で、赤
外線照射の効率を高めるためのものである。シリコン基
板４の表面に熱電対５を当てて温度を測定する。熱電対
５にはクロメル−アルメル熱電対を用いる。この温度測
定法によシ、第１図に示す温度サイクルを実測すると、
始めは第１図中の曲線■に示すように正確に一１定でき
ていたものが、繰シ返し５回目の測定では曲線■に示す
ようになシ、温度Ｔ１から温度１１２への立上シ傾斜が
緩やかになるとともに、到達温度も可成シ（約１０℃）
低くなっている。このような現象の起る原因は、高温に
おいて熱電対材料とシリコン基板との間に固相反応が進
むによシ、シリコンと熱電対材料による熱伝導率の低い
金芦蛙化物が形成されるためであると考えられる。この
ため３回程度の測定回数までは新しい熱電対と＃１は同
じ温度サイクルを示すが、５回以上になるとシリコンと
熱電対とが明瞭な反応を起し始め、指示温度は実際温度
よシ低くなシ、所定のアニールを行なうことができなく
なる。A silicon substrate 4 to be measured is placed on a quartz plate 3 and irradiated with an infrared lamp 1 to raise the temperature. 2 is an infrared reflecting mirror, which is used to increase the efficiency of infrared irradiation. A thermocouple 5 is applied to the surface of the silicon substrate 4 to measure the temperature. As the thermocouple 5, a chromel-alumel thermocouple is used. Using this temperature measurement method, we actually measure the temperature cycle shown in Figure 1.
At the beginning, the temperature remained exactly constant as shown in curve ■ in Figure 1, but after the fifth repeated measurement, the temperature rose from T1 to 112, as shown in curve ■. The slope becomes gentler and the temperature reached is also achievable (approximately 10°C).
It's getting lower. The reason for this phenomenon is that a solid-phase reaction progresses between the thermocouple material and the silicon substrate at high temperatures, resulting in the formation of a goldfish with low thermal conductivity between the silicon and the thermocouple material. This is thought to be due to the Therefore, up to about 3 measurements, the new thermocouple and #1 show the same temperature cycle, but after 5 or more measurements, the silicon and thermocouple start to react clearly, and the indicated temperature is less similar to the actual temperature. Otherwise, it becomes impossible to perform the prescribed annealing.
すなわち、従来の半導体基板の温度測定方法には、正確
に、速く、再現性良く急激な温度変化を測定することが
できないという欠点がある。That is, the conventional method for measuring the temperature of a semiconductor substrate has the drawback that it is not possible to measure sudden temperature changes accurately, quickly, and with good reproducibility.
本発明の目的は、かかる従来技術の欠点を除去すること
によシ、熱電対を用いて、正確に、速く。The object of the present invention is to eliminate the drawbacks of such prior art techniques by using thermocouples accurately and quickly.
再現性良く急激な温度変化を測定できるところの半導体
基板の温度測定方法を提供することにある。An object of the present invention is to provide a method for measuring the temperature of a semiconductor substrate, which can measure rapid temperature changes with good reproducibility.
本発明の半導体基板の温度測定方法は、半導体基板の少
くとも一部分に絶縁膜を被着し、該絶縁膜上に熱電対を
当てることから構成される。The method for measuring the temperature of a semiconductor substrate according to the present invention includes depositing an insulating film on at least a portion of the semiconductor substrate and applying a thermocouple onto the insulating film.
第３図は本発明の一実施例を説明するだめの模式図であ
る。なお、図においては前述の第１図と同じものには同
一参照数字を付しである。被測定シリコン基板４上の一
部分に膜厚１０００Ａのシリコン窒化膜６を被着する。FIG. 3 is a schematic diagram for explaining one embodiment of the present invention. Note that in the figures, the same parts as in FIG. 1 described above are given the same reference numerals. A silicon nitride film 6 with a thickness of 1000 Å is deposited on a portion of the silicon substrate 4 to be measured.
このシリコン基板４を石英板３の上に置き、赤外線ラン
プ１で加熱し昇温させる。シリコン基板４の温度を測定
する熱電対５はシリコン窒化膜６０表面に当てる。熱電
対５としてクロメル−アルメルを用いる。This silicon substrate 4 is placed on a quartz plate 3 and heated with an infrared lamp 1 to raise the temperature. A thermocouple 5 for measuring the temperature of the silicon substrate 4 is applied to the surface of the silicon nitride film 60. Chromel-alumel is used as the thermocouple 5.
この測定方法によシ、第１図曲線■に示す温度サイクル
を実測した結果は、同図中に点線で示した曲線■のよう
になる。温度Ｔ、から温度Ｔ２への温度の上昇時に、窒
化シリコン膜６の熱伝導による微少な温度遅れが観測さ
れるが、到達温度には変シない。この観測された温度遅
れも０．１秒程度で、温度Ｔ２への保持時間（数秒）に
対してはノ
無視できる値である。また、繰シ返へしての測定回数に
対する変化は、２００回目測定においてもなんらの変化
を認めることができない。Using this measurement method, the temperature cycle shown in curve (2) in Figure 1 was actually measured, and the results were as shown in curve (2) indicated by a dotted line in the same figure. When the temperature rises from temperature T to temperature T2, a slight temperature delay due to heat conduction in the silicon nitride film 6 is observed, but there is no change in the final temperature. This observed temperature delay is also about 0.1 seconds, which is a negligible value compared to the holding time (several seconds) to temperature T2. Further, regarding the number of repeated measurements, no change was observed even in the 200th measurement.
すなわち、本実施例によると、急減に変化する半導体基
板の温度を、正確に、速く、再現性良く測定できること
になる。従ってこれを用いて所定のアニールを行なうこ
とが可能となる。In other words, according to this embodiment, the rapidly changing temperature of the semiconductor substrate can be measured accurately, quickly, and with good reproducibility. Therefore, it is possible to perform a predetermined annealing using this.
なお、以上の実施例においては、半導体基板と合につい
て説明したけれども、本発明は、例えば半導体基板とし
てゲルマニウム、ガリウム砒素等の半導体基板、絶縁膜
として酸化膜、ボロン窒化膜等の絶縁物、熱電対として
白金系統の熱電対を用いてもよいことは言うまでもない
。Although the above embodiments have been described with reference to semiconductor substrates, the present invention is also applicable to semiconductor substrates such as germanium, gallium arsenide, etc. as semiconductor substrates, insulators such as oxide films and boron nitride films, and thermoelectric materials as insulating films. It goes without saying that a platinum-based thermocouple may be used as the pair.
さらに、使用する絶縁膜の厚さ社温度上昇時における立
上シの温度遅れから考えて、その厚さは十分に薄いこと
が必要である。しかし余シ薄いと艮
半導体基板と熱電対の固相ルを防止できなくなるので適
当な厚さとする必要がある。だソし、この立上シの温度
遅れの時間ａｔｔは一定であるので、始めに温度サイク
ルのＴ２温度の保持時間をその分だけ補正しておくこと
によっても、所定のアニールが可能となる。Furthermore, the thickness of the insulating film used must be sufficiently thin in consideration of the temperature delay during startup when the temperature rises. However, if it is too thin, it will not be possible to prevent the solid contact between the semiconductor substrate and the thermocouple, so it is necessary to have an appropriate thickness. However, since the temperature delay time att of this start-up is constant, predetermined annealing is also possible by first correcting the T2 temperature holding time of the temperature cycle by that amount.
以上、詳細に説明したとおシ、本発明によれば、半導体
基板上に絶縁膜を介して、熱電対を当てることによ多温
度測定を行なうので、従来のように多数回繰シ返へし測
定していると測定温度の立ち上シ傾斜が緩かになシ、到
達温度も低くなると言うことが無くなシ、正確に、速く
、再現性良く急激な温度変化を測定できると言う効果が
得られる。As described above in detail, according to the present invention, multiple temperature measurements are performed by applying thermocouples to a semiconductor substrate through an insulating film, so it is not necessary to repeat the measurement many times as in the conventional method. During measurement, the rising slope of the measured temperature is gentle, the temperature reached does not become low, and rapid temperature changes can be measured accurately, quickly, and with good reproducibility. can get.
従って本発明を赤外線アニールに用いると所定のアニー
ルを正しく行なうことが可能となシその効果は大きい。Therefore, when the present invention is used for infrared annealing, it is possible to carry out a predetermined annealing correctly, which has a great effect.
第１図は赤外線アニールにおける温度サイクルと従来の
方法および本発明の一実施例によるその測定結果を示す
図、第２図は従来の半導体基板の温度測定方法の一例を
説明するだめの模式図、第３図は本発明の一実施例を説
明するための模式図である。FIG. 1 is a diagram showing a temperature cycle in infrared annealing, a conventional method, and the measurement results according to an embodiment of the present invention, and FIG. 2 is a schematic diagram illustrating an example of a conventional method for measuring the temperature of a semiconductor substrate. FIG. 3 is a schematic diagram for explaining one embodiment of the present invention.
Claims (2)
該絶縁膜上に熱電対を当てることを特徴とする半導体基
板の温度測定方法。(1) depositing an insulating film on at least a portion of the semiconductor substrate;
A method for measuring the temperature of a semiconductor substrate, comprising applying a thermocouple to the insulating film.
縁膜がシリコン窒化膜である特許請求の範囲第（１）項
記載の半導体基板の温度測定方法。(2) The method for measuring the temperature of a semiconductor substrate according to claim (1), wherein the semiconductor substrate is silicon or the gallium arsenide edge film is a silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8528483A JPS59210652A (en) | 1983-05-16 | 1983-05-16 | Temperature measuring process of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8528483A JPS59210652A (en) | 1983-05-16 | 1983-05-16 | Temperature measuring process of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59210652A true JPS59210652A (en) | 1984-11-29 |
Family
ID=13854268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8528483A Pending JPS59210652A (en) | 1983-05-16 | 1983-05-16 | Temperature measuring process of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59210652A (en) |
-
1983
- 1983-05-16 JP JP8528483A patent/JPS59210652A/en active Pending
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