JPS59197881A - Reflected electron detecting device having energy selecting function - Google Patents
Reflected electron detecting device having energy selecting functionInfo
- Publication number
- JPS59197881A JPS59197881A JP7266283A JP7266283A JPS59197881A JP S59197881 A JPS59197881 A JP S59197881A JP 7266283 A JP7266283 A JP 7266283A JP 7266283 A JP7266283 A JP 7266283A JP S59197881 A JPS59197881 A JP S59197881A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- reflected electron
- filter
- scintillator
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はエネルギー選択機能を有する反射電子検出装置
の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement of a backscattered electron detection device having an energy selection function.
走査電子顕微鏡等の電子線装置においては、試オ゛１や
加］−拐料に電子線を照射したとぎに発生ずる反則電子
を検出して試料に関する情報として用いることが多い。In an electron beam apparatus such as a scanning electron microscope, foul electrons generated when a specimen or sample is irradiated with an electron beam are often detected and used as information regarding the specimen.
一般に、反射電子の］エネルギーは、零から試料照射電
子線のエネルギーまで広範囲に分布するが、エネルギー
に拘わりなく全ての反則電子を検出するかわりに、ある
範囲のエネルギーを有する反射電子のみを選択して検出
するようにすれば、反射電子が持つ試料に関する情報の
種類を絞ることが出来る。例えば、高いエネルギーの反
射電子を検出すれば試料表面に関する情報を多く含／υ
だ情報が得られ、低いエネルギーの反射電子を検出ずれ
ば試料深部に関する情報を多く含んだ情報が得られる。In general, the energy of backscattered electrons is distributed over a wide range from zero to the energy of the electron beam irradiating the sample, but instead of detecting all foul electrons regardless of energy, only backscattered electrons with energy within a certain range are selected. By detecting the reflected electrons, it is possible to narrow down the type of information about the sample that the backscattered electrons have. For example, detecting high-energy backscattered electrons contains a lot of information about the sample surface.
By detecting low-energy backscattered electrons, information containing a lot of information about the deep part of the sample can be obtained.
反射電子をそのエネルギーに応じて選別するだめの装置
としては、従来より、反射電子検出装置の前面に偏向磁
場やりターディング電場を発生する装置が提案されてい
るが、装置が大川りになるだけでなく、装置から漏れる
電場や磁場が入射電子線を不正に偏向させる原因となる
欠点があった。そのため多くの走査電子顕微鏡は、その
ような装置を設（プず出来るだけ低いエネルギーの反則
電子線まで検出出来るように反射電子検出装置ｄを構成
していた。従って、高いエネルギーのｌｙ、 ！７４電
子線のみを検出して試別表面に関りる情報を多く含／υ
た情報を１ｑることは出来なかつｌこ。As a device for sorting backscattered electrons according to their energy, a device that generates a deflection magnetic field or a tarding electric field in front of a backscattered electron detection device has been proposed, but the device is too complicated. However, there was a drawback in that the electric and magnetic fields leaking from the device could cause the incident electron beam to be improperly deflected. For this reason, many scanning electron microscopes are equipped with such a device and have a backscattered electron detection device d that can detect even the lowest energy foul electron beams.Therefore, high energy ly,!74 Detects only the electron beam and contains a lot of information related to the sample surface /υ
It is not possible to obtain the same information.
本発明はこの点に鑑みてなされたもので、反則電子検出
素子の検出面前方に、反射電子に対するフィルターを挿
脱するフィルター保持手段を設けたことを特徴とする。The present invention has been made in view of this point, and is characterized in that a filter holding means for inserting and removing a filter for reflected electrons is provided in front of the detection surface of the foul electron detection element.
第１図は、本発明を走査電子顕微鏡に適用した場合にお
【プる試ＩＩ 至近傍の構成を示す略図である。FIG. 1 is a schematic diagram illustrating the configuration of the near vicinity when the present invention is applied to a scanning electron microscope.
図にａ３いて、試料室１の上方には対物レンズの下磁極
片２が設けられており、試料３は試料ホルタ−４によっ
て保持され、試料ホルダーを載置する試料移動機構５に
よってその位置が移動される。A3 in the figure, the lower magnetic pole piece 2 of the objective lens is provided above the sample chamber 1, the sample 3 is held by a sample holder 4, and its position is controlled by a sample moving mechanism 5 that places the sample holder. will be moved.
ト磁極片２ど試お１３との間には、反射電子検出装置か
配置されており、この反射電子検出装置は直角ブリスム
型のシンチレータ６、ライトパイプ７゜光電子指イ８管
８とから構成される。又、シンチレータ６と試料３との
間にはフィルター保持手段８（こ保持された薄い円盤状
のフィルター１１．１２゜１３が選択的に配置される。A backscattered electron detection device is arranged between the magnetic pole pieces 2 and 13, and this backscattered electron detection device consists of a right-angled brism type scintillator 6, a light pipe 7°, and a photoelectronic finger 8 tube 8. be done. Further, between the scintillator 6 and the sample 3, a filter holding means 8 (a thin disc-shaped filter 11, 12, 13 held by the filter holding means 8) is selectively disposed.
これらのフィルターやシンチレータ６には、電子線通過
孔が穿たれてＪシつ、対物レンズによって集束された電
子線１４の試料照射経路を妨げないように配慮されてい
る。These filters and scintillators 6 are provided with electron beam passage holes so as not to obstruct the sample irradiation path of the electron beam 14 focused by the objective lens.
このような構成において、電子線１４の試料照射によっ
て試料から発生づ−る反射電子１５はフィルター（図で
は１２）をｊ式過してシンチレータ６の下面に入射し、
そのエネルギーは光に変換される。この光はプリズム型
シンチレーク６の内面で反射されてライトパイプ７の方
向へ集められ、光電子増信管８に入射して電気信号に変
換される。In such a configuration, reflected electrons 15 generated from the sample by irradiation of the sample with the electron beam 14 pass through a filter (12 in the figure) and enter the lower surface of the scintillator 6.
That energy is converted into light. This light is reflected by the inner surface of the prism-type scintillator 6, collected in the direction of the light pipe 7, enters the photoelectron intensifier tube 8, and is converted into an electrical signal.
このような型の反射電子検出装置は、例えば実開昭５４
−１９６５７号明細書に詳説されているが、通常シンチ
レータはエネルギーの弱い反射電子でも検出できるよう
に構成されていて、例えば２ＫｅＶ以上のエネルギーを
有する反射電子は全て検出される。そこで、前述したよ
うな観察目的のために弱いエネルギーの反射電子をカッ
トして高いエネルギーの反射電子のみを検出するために
は、弱いエネルギーの反射電子をカットづ゛るように、
フィルター保持手段９を紙面上左右方向に移動操作りる
ことによってフィルター１１．１２．１３のつらいずれ
かをシンデレータロの下面に配置する。即ら、反射電子
はフィルター１１．１２．１３のいずれかを透過する際
に例えば３ＫｅＶ、５ｅＶ、７ＫｅＶ以上のエネルギー
を損失するので、シンデレータロには各々５Ｋｅ ｖ、
７Ｋｅ ｙ、９ＫｅＶ以上のエネルギーを持って試料か
ら発生する反１’ｌ電子のみが検出されることになる。This type of backscattered electron detection device is, for example,
As detailed in the specification of No. 19657, a scintillator is usually configured to be able to detect even low-energy reflected electrons, and for example, all reflected electrons having an energy of 2 KeV or more are detected. Therefore, in order to cut off the backscattered electrons with weak energy and detect only the backscattered electrons with high energy for the observation purpose described above, it is necessary to cut off the backscattered electrons with low energy.
By moving the filter holding means 9 in the left and right directions on the paper, any of the icicles of the filters 11, 12, and 13 is placed on the lower surface of the cinder taro. That is, when reflected electrons pass through any of the filters 11, 12, and 13, they lose energy of, for example, 3 KeV, 5 eV, and 7 KeV or more, so the sintered electrons have 5 Ke V, 5 Ke V, and 7 KeV, respectively.
Only anti-1'l electrons generated from the sample with energy of 7Key, 9KeV or more will be detected.
第２図は、フィルター１２の構造を示す断面図ぐある。FIG. 2 is a sectional view showing the structure of the filter 12.
フィルター材としてはポリカーボナイト等のプラスデッ
ク薄膜の両面にアルミやカーボン等の導電物質を］−テ
ィングしたものが用いられる。フィルターの厚さは、電
子線通過孔Ｈから離れるにしたがって段階的に薄くなる
ように形成されており、フィルターの異った位置を透過
する反則電子ｒＪ１５ａ、１５ｂ、１５ｃのフィルター
内における紅路の長ざＤ ｈ＜略一定に保たれるように
しである。そのため、シンデレータロの検出面内のいず
れかに入射する反射電子線に対してもエネルギー減衰量
を略一定に保つことが出来る。尚フィルター１１．１３
もフィルター１２と同様な形状となっているが、フィル
ターの厚さは異っている。The filter material used is a thin film made of polycarbonite or the like coated with a conductive material such as aluminum or carbon on both sides. The thickness of the filter is formed so that it gradually becomes thinner as it moves away from the electron beam passage hole H, and the red path in the filter of the foul electrons rJ15a, 15b, and 15c passing through different positions of the filter is reduced. The length D h is kept substantially constant. Therefore, the amount of energy attenuation can be kept substantially constant even for reflected electron beams that are incident on any part of the detection surface of the cinderella. Furthermore, filter 11.13
The filter 12 also has the same shape as the filter 12, but the thickness of the filter is different.
所で、本発明は第１図の実施例装置に限定されるもので
はなく、装置を簡略化するためフィルターを複数個使用
する代りに単一のフィルターを使用する場合とフィルタ
ーを使用しないで直接シンチレータに入射させる場合と
に切換るようにしてもよい。又、シンチレータを使用ぼ
ずに半導体検出素子を利用した反射電子検出装置に本発
明を適用することも容易である。By the way, the present invention is not limited to the apparatus of the embodiment shown in FIG. It may be possible to switch between the case where the light is incident on the scintillator and the case where the light is incident on the scintillator. Furthermore, the present invention can be easily applied to a backscattered electron detection device that uses a semiconductor detection element without using a scintillator.
以上のように、本発明によれば、試料近傍にリターディ
ング電圧を発生させるようなことなしに、簡単な構造で
且つ試料照射電子線に対する悪影響の少ない反射電子の
エネルギー選択機能が得られるため、各種の電子線装置
における反射電子検出装置として用いて大きな効果が発
揮される。As described above, according to the present invention, it is possible to obtain an energy selection function for reflected electrons that has a simple structure and has little adverse effect on the electron beam irradiating the sample without generating a retarding voltage near the sample. It is highly effective when used as a backscattered electron detection device in various electron beam devices.
第１図は本発明の一実施例装置を示す略図、第２図は第
１図（こＪ５けるフィルターを示す断面図である。
１：試料室、２：対物レンズ下磁極片、３：試料、４：
試料ホルタ−１５；試料移動装置、６：シンチレータ、
７：ライトパイプ、８：光電子増イ８管、９：フィルタ
ー保持装置、１１，１２．１３＝フイルター、１４：試
料照＠電子線、１５゜１５ａ、１５ｂ、１５Ｃ：反射電
子線。
特許出願人
日本電子株式会社
代表者 伊藤 −夫FIG. 1 is a schematic diagram showing an apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a filter shown in FIG. , 4:
Sample holter 15; sample moving device, 6: scintillator,
7: light pipe, 8: photomultiplier 8 tube, 9: filter holding device, 11, 12.13 = filter, 14: sample illumination @ electron beam, 15° 15a, 15b, 15C: reflected electron beam. Patent applicant JEOL Ltd. Representative Ito-husband
Claims (3)
りるフィルターを挿脱するためのフィルター保持手段を
設＊−３１〔ことを特徴とするエネルギー選択機能を有
する反射電子検出装置。(1) A backscattered electron detection device having an energy selection function, characterized in that a filter holding means for inserting and removing a filter for backscattered electrons is provided in front of the detection surface of the backscattered electron detection element.
数のフィルターを保持することを特徴とする特ｉｉＱ請
求の範囲第１項記載のエネルギー選択機１１Ｌを有する
反則電子検出装置。(2) The foul electron detection device having the energy selector 11L according to claim 1, wherein the filter holding means holds a plurality of arbitrarily selected filters.
を特徴とする特許請求の範囲第１項記載のエネルギー選
択機能を有する反則電子検出装置。(3) the filter has a non-uniform film thickness;
A foul electron detection device having an energy selection function according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7266283A JPS59197881A (en) | 1983-04-25 | 1983-04-25 | Reflected electron detecting device having energy selecting function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7266283A JPS59197881A (en) | 1983-04-25 | 1983-04-25 | Reflected electron detecting device having energy selecting function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59197881A true JPS59197881A (en) | 1984-11-09 |
Family
ID=13495799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7266283A Pending JPS59197881A (en) | 1983-04-25 | 1983-04-25 | Reflected electron detecting device having energy selecting function |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59197881A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61157814U (en) * | 1985-03-22 | 1986-09-30 | ||
| EP0725975A1 (en) * | 1993-10-26 | 1996-08-14 | Metrologix, Inc. | Detection system for measuring high aspect ratio |
| WO1998000853A1 (en) * | 1996-07-01 | 1998-01-08 | K E Developments Limited | Detector devices |
| US8629395B2 (en) | 2010-01-20 | 2014-01-14 | Hitachi High-Technologies Corporation | Charged particle beam apparatus |
| KR20150036579A (en) | 2012-09-25 | 2015-04-07 | 가부시키가이샤 히다치 하이테크놀로지즈 | Electron microscope and electron beam detector |
| US11393658B2 (en) | 2018-11-13 | 2022-07-19 | Hitachi High-Tech Corporation | Charged particle beam apparatus and sample observation method |
-
1983
- 1983-04-25 JP JP7266283A patent/JPS59197881A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61157814U (en) * | 1985-03-22 | 1986-09-30 | ||
| EP0725975A1 (en) * | 1993-10-26 | 1996-08-14 | Metrologix, Inc. | Detection system for measuring high aspect ratio |
| EP0725975A4 (en) * | 1993-10-26 | 1997-12-29 | Metrologix Inc | Detection system for measuring high aspect ratio |
| WO1998000853A1 (en) * | 1996-07-01 | 1998-01-08 | K E Developments Limited | Detector devices |
| AU714501B2 (en) * | 1996-07-01 | 2000-01-06 | K E Developments Limited | Detector devices |
| US8629395B2 (en) | 2010-01-20 | 2014-01-14 | Hitachi High-Technologies Corporation | Charged particle beam apparatus |
| KR20150036579A (en) | 2012-09-25 | 2015-04-07 | 가부시키가이샤 히다치 하이테크놀로지즈 | Electron microscope and electron beam detector |
| US9355815B2 (en) | 2012-09-25 | 2016-05-31 | Hitachi High-Technologies Corporation | Electron microscope and electron beam detector |
| US11393658B2 (en) | 2018-11-13 | 2022-07-19 | Hitachi High-Tech Corporation | Charged particle beam apparatus and sample observation method |
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