JPS5919352A - Semiconductor laser cleaving device - Google Patents
Semiconductor laser cleaving deviceInfo
- Publication number
- JPS5919352A JPS5919352A JP57127532A JP12753282A JPS5919352A JP S5919352 A JPS5919352 A JP S5919352A JP 57127532 A JP57127532 A JP 57127532A JP 12753282 A JP12753282 A JP 12753282A JP S5919352 A JPS5919352 A JP S5919352A
- Authority
- JP
- Japan
- Prior art keywords
- diamond tool
- wafer
- semiconductor laser
- shaft
- cleavage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、ダイヤモンドツールで半導体レーザウェーハ
（以下ウエーノ・と略す）上にヘキ開用の傷をつける半
導体レーザヘキ開装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser cleavage device for making cleavage scratches on a semiconductor laser wafer (hereinafter referred to as wafer) using a diamond tool.
半導体レーザ素子はドーピング、エツチング等の半導体
製造技術でウエーノ・上に一度に多数製造される。そし
て、その中から個々の素子をとり出してパッケージに封
入し、使用する。このウェーハからレーザ素子をとり出
す作業はダイヤモンドスクライプと呼ばれている方法で
行なわれており、ダイヤモンドツールでウェーハ上の所
定の位置に傷を一部つけ、この傷に沿ってウェーハをヘ
キ開するものである。このヘキ開によって得られたヘキ
開面は、半導体レーザ素子が発振する際の最も重要な部
分となる平行反射面を構成している。一般に、半導体レ
ーザではこのヘキ開面が数μｍの許容精度で位置決めさ
れることが必要である。Semiconductor laser devices are manufactured in large numbers on a wafer using semiconductor manufacturing techniques such as doping and etching. Then, individual elements are taken out from there, sealed in a package, and used. The process of removing laser elements from this wafer is carried out using a method called diamond scribing, in which a diamond tool is used to make a scratch at a predetermined position on the wafer, and the wafer is then cut open along the scratch. It is something to do. The cleavage plane obtained by this cleavage constitutes a parallel reflecting surface which is the most important part when the semiconductor laser device oscillates. Generally, in a semiconductor laser, this cleavage plane needs to be positioned with an allowable accuracy of several μm.
このように、半導体レーザヘキ開装置ではウェーハ上の
所定のヘキ開位置に誤差数μｍの高精度で傷をつけるこ
とが必要とされる。As described above, the semiconductor laser cleavage apparatus is required to make a scratch at a predetermined cleavage position on a wafer with high accuracy within an error of several μm.
半導体レーザヘキ開装置は、ウェーハの移動を行うＸ、
Ｙ移動台、ダイヤモンドツールの上下移動台、ヘキ開位
置を決定し、傷をつける状況を観測する顕微鏡で構成さ
れている。数μｍの誤差で傷ｔ−ウェーハ上につける半
導体レーザヘキ開装置では、高精度の位置決めが可能で
、なめらかな移動を行うＸ、Ｙ移動台とダイヤモンドツ
ールの接触圧を数グラムの微少量調整でき、ヘキ開位置
に移動する時、ダイヤモンドツールを上げ、所定ノ位置
で下げてウェーハに接触させるダイヤモンドツール上下
移動台が必要とされる。The semiconductor laser cleavage device has X, which moves the wafer;
It consists of a Y moving table, a table that moves the diamond tool up and down, and a microscope that determines the opening position and observes the scratching situation. Semiconductor laser cleavage equipment, which places scratches on wafers with an error of several micrometers, is capable of highly accurate positioning, and the contact pressure between the smoothly moving X and Y moving table and the diamond tool can be adjusted in small amounts of several grams. A diamond tool vertical moving table is required to raise the diamond tool when moving to the cleavage open position and lower it at a predetermined position to bring it into contact with the wafer.
第１図に今までの牛導体し−ザヘキ開装置の斜視図を示
す。ダイヤモンドツールを先端に取す付けた軸１（以下
ダイヤモンドツールと言う）が筒２にバネ３で押されて
固定されている。このダイヤモンドツール１は筒２の中
で、すべり面４でお互いにすべり、矢印５の方向に移動
が可能である。FIG. 1 shows a perspective view of a conventional conductor opening device. A shaft 1 (hereinafter referred to as the diamond tool) with a diamond tool attached to its tip is fixed to a tube 2 by being pushed by a spring 3. This diamond tool 1 slides against each other on a sliding surface 4 in a tube 2, and is movable in the direction of an arrow 5.
バネ３は、ダイヤモンドツール１の半４体レーザウェー
ハ６（以下ウェーハと言う）への押し付は圧を変化させ
る為、ネジ７によシバネ剛さが変化可能な構造となって
いる。筒２は、矢印５の方向に移動可能なモータ９のネ
ジ送りによる上下移動台８上に固定されており、本上下
移動台８は固定架台１０上に取り付けられている。ウェ
ー／％ ６は真空吸着台１１を介して、矢印１２のＸ方
向と矢印１３のＹ方向の互いに直角な方向に動くＸ移動
台１４とＸ移動台１５上に取り付けられている。The spring 3 has a structure in which the stiffness of the spring 3 can be changed by the screw 7 because the pressure of the diamond tool 1 against the semi-quartet laser wafer 6 (hereinafter referred to as wafer) changes. The tube 2 is fixed on a vertically movable table 8 driven by a screw feed of a motor 9 that can move in the direction of an arrow 5, and the vertically movable table 8 is mounted on a fixed frame 10. The wafer/% 6 is mounted via a vacuum suction table 11 on an X moving table 14 and an X moving table 15 which move in directions perpendicular to each other in the X direction of arrow 12 and the Y direction of arrow 13.
両移動台はそれぞれモータ１６によるネジで移動する。Both movable tables are moved by screws driven by motors 16, respectively.
また、ヘキ開位置の位置決めと傷をつける状態を観測す
る目的で顕微鏡１９が配置されている。Further, a microscope 19 is arranged for the purpose of determining the opening position and observing the state of scratching.
本装置にまりヘキ開用の傷を矢印１３方向につける作業
の流れを以下に示す。The work flow for making a hole in the device in the direction of arrow 13 is shown below.
（１）顕微鏡１９によりウェーハ６上のヘキ開位置の決
定を行う。(1) The cleavage position on the wafer 6 is determined using the microscope 19.
（２）筒２を上下移動台８で、ダイヤモンドツール１が
ウェーハ６に接触し、所定の圧力が加わる位置まで、矢
印１７方向に移動させる。(2) The cylinder 2 is moved in the direction of the arrow 17 by the vertical moving table 8 to the position where the diamond tool 1 contacts the wafer 6 and a predetermined pressure is applied.
（３） Ｘ移動台１５が矢印１８方向に移動し、傷を
つける。(3) The X moving table 15 moves in the direction of arrow 18 and causes damage.
しかしながら、上述した装置には、ダイヤモンドツール
１の上下移動台８に以下のような欠点がある。However, the above-described apparatus has the following drawbacks in the vertically movable table 8 of the diamond tool 1.
（１）ダイヤモンドツール１が筒２の中ですべり移動す
るため、必ずこの部分にすき間があり、ダイヤモンドツ
ール１がウェーハ６上に降りる時の同位置へのくり返し
の再現性が悪い。(1) Since the diamond tool 1 slides inside the tube 2, there is always a gap in this part, and the reproducibility of repeatedly returning to the same position when the diamond tool 1 is lowered onto the wafer 6 is poor.
（２） ダイヤモンドツール１のウェーハ６への数グラ
ムの微少量の接触圧の調整が、ステラフスリップが発生
するすベシ部がダイヤモンドツール１と筒２との間に存
在するため不可能でアシ、さらにその量も一定とならす
変化する。(2) It is impossible to adjust the contact pressure of the diamond tool 1 to the wafer 6 by a small amount of several grams because the base where stellate slip occurs exists between the diamond tool 1 and the tube 2. , furthermore, the amount also changes while remaining constant.
（３） ダイヤモンドツール１がおりる時、ウェーノ
ー６との接触位置の再現性を上げる為には、上下移動台
８に高精度、高剛性が要求され、比較的重い、大きな移
動台とする必要がある。(3) In order to improve the reproducibility of the contact position with the Waeno 6 when the diamond tool 1 descends, the vertical moving table 8 is required to have high precision and high rigidity, and it is necessary to use a relatively heavy and large moving table. There is.
以上のような理由で、本生導体レーザヘキ開装［テは、
ダイヤモンドツール１の上下移動台８に重大な問題があ
り、数μｍの位置決め精度で、ヘキ開用の傷をつけるこ
とは不可能であった。For the above-mentioned reasons, this raw conductor laser beam opening [te is
There was a serious problem with the vertically movable table 8 of the diamond tool 1, and it was impossible to make a crack for opening with a positioning accuracy of several μm.
本発明は上記の点に注目してなされたもので、ウェーハ
上に高精度なヘキ開用の傷をつけ得る半導体レーザヘキ
開装置を提供するものである。The present invention has been made with attention to the above points, and an object thereof is to provide a semiconductor laser cleavage device capable of making highly accurate cleavage scratches on a wafer.
上記の目的を達成するため本発明では、一端にダイヤモ
ンドツールを取り付け、他端に駆動系を配置し、その中
間に静圧空気軸受支持の回転中心を備えた高精度、高剛
性のダイヤモンドツール上下移動台で半導体レーザヘキ
開装置を構成したものである。In order to achieve the above object, the present invention provides a high-precision, high-rigidity diamond tool with a diamond tool attached to one end, a drive system arranged at the other end, and a center of rotation supported by a hydrostatic air bearing in the middle. A semiconductor laser cleavage device is configured with a movable table.
第２図に本発明による半導体レーザヘキ開装置の斜視図
を示す。ダイヤモンドツール３１が回転中心線３２回り
に矢印３３方向に回転する軸３４の一端に配置されてお
シ、軸３４の左右両側に取シ付いた軸３５が圧縮空気の
空気だまり４９とその吹き出しノズル５０を持つ静圧空
気軸受３６で支えられる構造となっている。この回転移
動によシダイヤモンドツール３１が上下に移動するわけ
である。軸３４の他端には矢印３７方向に動くエアシリ
ンダ３８が取り付いており、ダイヤモンドツール３１の
上下移動の駆動系を構成している。FIG. 2 shows a perspective view of a semiconductor laser cleavage device according to the present invention. A diamond tool 31 is disposed at one end of a shaft 34 that rotates in the direction of an arrow 33 around a rotation center line 32, and shafts 35 attached to both left and right sides of the shaft 34 are connected to an air pocket 49 of compressed air and its blowing nozzle. It has a structure in which it is supported by a static pressure air bearing 36 having a diameter of 50 mm. This rotational movement causes the diamond tool 31 to move up and down. An air cylinder 38 that moves in the direction of arrow 37 is attached to the other end of the shaft 34, and constitutes a drive system for vertically moving the diamond tool 31.
なお、このエアシリンダ３８の駆動は圧縮空気で、電磁
弁３９とスピードコントローラ４０を介して行なわれて
いる。スピードコントローラ４ｏはエアシリンダ３８の
上下移動速度を調整する為に取シ付けたものである。ま
た、軸３４部にダイヤモンドツール３１のウェーハ４１
への押し付は圧を調整する為の重シ４２が数カ付く構造
となっている。ダイヤモンドツール３１の下方の真空吸
着台４２上にウェーハ４１が取り付いておシ、その下部
に矢印４３．４４のお互いに直角方向にモータ４７によ
るネジ送りで動く移動台４５．４６が固定架台４８上に
配置されている。また、この作業を観測し、ヘキ開用の
傷の位置決めの目的で顕微鏡４９が配置されている。The air cylinder 38 is driven by compressed air via a solenoid valve 39 and a speed controller 40. The speed controller 4o is installed to adjust the vertical movement speed of the air cylinder 38. Also, the wafer 41 of the diamond tool 31 is attached to the shaft 34 part.
The structure is such that several heavy screws 42 are attached to adjust the pressure when pressed. A wafer 41 is mounted on a vacuum suction table 42 below the diamond tool 31, and a movable table 45, 46 that is moved by a screw feed by a motor 47 in directions perpendicular to each other as indicated by arrows 43 and 44 is mounted on a fixed pedestal 48 below the wafer 41. It is located in A microscope 49 is also provided for the purpose of observing this work and locating the wound for opening.
以上のような構造としたことにより本発明は、（１）静
圧空気軸受３６でダイヤモンドツール３１のなめらかな
動きと高精度な位置決め及び移動が得られるので、位置
の再現性が１μｍ以下となる。With the structure described above, the present invention has the following advantages: (1) The hydrostatic air bearing 36 allows smooth movement and highly accurate positioning and movement of the diamond tool 31, resulting in position repeatability of 1 μm or less. .
伐）静圧空気軸受３６は摩擦係数がほとんどＯで、ステ
ラフスリップがないだめ、ダイヤモンドツール３１のウ
ェーハ４１への接触圧を重りにより１グラム以下で徽少
量調整することができ、その量が常に一定である。The static pressure air bearing 36 has a friction coefficient of almost O, and as long as there is no stellar slip, the contact pressure of the diamond tool 31 to the wafer 41 can be adjusted by a small amount of 1 gram or less using a weight, and the amount Always constant.
（３）ダイヤモンドツール３１の上下移動速度がスピー
ドコントローラ４０により簡単に調整可能となり、ダイ
ヤモンドツール３１がウェーハ４１に接触する際の衝撃
をやわらげることができる。(3) The vertical movement speed of the diamond tool 31 can be easily adjusted by the speed controller 40, and the impact when the diamond tool 31 contacts the wafer 41 can be reduced.
以上によって、本ダイヤモンドツール上下移動台を備え
た半導体レーザヘキ開装置により高精度に半導体レーザ
ウェーハのヘキ開が可能となった。As described above, it has become possible to cleave a semiconductor laser wafer with high precision using the semiconductor laser cleavage apparatus equipped with the present diamond tool vertically movable table.
また、本発明によるダイヤモンドツール上下移動台をＬ
ＳＩ素子をウエーノ・から取り出すダイヤモンドスクラ
イプ装置に適用すれば同等の効果が得られることは言う
までもない。In addition, the diamond tool vertical moving table according to the present invention is
It goes without saying that the same effect can be obtained if the SI element is applied to a diamond scribe device for extracting the SI element from Ueno.
第１図は従来の半導体レーザヘキ開装置を示す斜視図、
第２図は本発明による半導体レーザヘキ開装置を示す斜
視図である。
１．３１・・・ダイヤモンドツール、６．４１・・・ウ
ェーハ、１１．４２・・・真空吸着台、１９．４９・・
・顕微鏡、３６・・・静圧空気軸受。
代理人 弁理士 薄田利幸
第 １ 図
烹 ２ 図FIG. 1 is a perspective view showing a conventional semiconductor laser cleavage device;
FIG. 2 is a perspective view showing a semiconductor laser cleavage device according to the present invention. 1.31...Diamond tool, 6.41...Wafer, 11.42...Vacuum suction table, 19.49...
・Microscope, 36...static air bearing. Agent Patent Attorney Toshiyuki Usuda 1st 2nd fig.
Claims (1)
傷をつけるダイヤモンドツールを配置し、他部に同ツー
ルの上下移動のガイドに静圧空気軸受支持の回転中心と
その駆動系を具備し、該軸部にダイヤモンドツールの半
導体レーザウェーハへの接触圧を調整する為の加圧機構
を装備するダイヤモンドツール上下移動台で構成するこ
とを特徴とする半導体レーザヘキ開装置。1. A semiconductor laser wafer is placed at one end of the shaft, and a diamond tool for making a cleavage scratch is placed on the top, and the other part is equipped with a rotation center supported by a hydrostatic air bearing and its drive system to guide the vertical movement of the tool. A semiconductor laser cleavage device comprising a diamond tool vertically movable table equipped with a pressure mechanism on the shaft portion for adjusting the contact pressure of the diamond tool to the semiconductor laser wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57127532A JPS5919352A (en) | 1982-07-23 | 1982-07-23 | Semiconductor laser cleaving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57127532A JPS5919352A (en) | 1982-07-23 | 1982-07-23 | Semiconductor laser cleaving device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5919352A true JPS5919352A (en) | 1984-01-31 |
Family
ID=14962340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57127532A Pending JPS5919352A (en) | 1982-07-23 | 1982-07-23 | Semiconductor laser cleaving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5919352A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62163386A (en) * | 1986-01-13 | 1987-07-20 | Daito Seiki Kogyo Kk | Point-scribing device for laser diode |
| JP2003045823A (en) * | 2001-07-27 | 2003-02-14 | Disco Abrasive Syst Ltd | Scribing apparatus |
| JP2003045824A (en) * | 2001-07-27 | 2003-02-14 | Disco Abrasive Syst Ltd | Scriber mechanism |
-
1982
- 1982-07-23 JP JP57127532A patent/JPS5919352A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62163386A (en) * | 1986-01-13 | 1987-07-20 | Daito Seiki Kogyo Kk | Point-scribing device for laser diode |
| JPH0523514B2 (en) * | 1986-01-13 | 1993-04-02 | Daitoron Tekunorojii Kk | |
| JP2003045823A (en) * | 2001-07-27 | 2003-02-14 | Disco Abrasive Syst Ltd | Scribing apparatus |
| JP2003045824A (en) * | 2001-07-27 | 2003-02-14 | Disco Abrasive Syst Ltd | Scriber mechanism |
| JP4643865B2 (en) * | 2001-07-27 | 2011-03-02 | 株式会社ディスコ | Scriber mechanism |
| JP4664544B2 (en) * | 2001-07-27 | 2011-04-06 | 株式会社ディスコ | Scribing equipment |
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