JPS59192904A - Device for measuring film thickness - Google Patents
Device for measuring film thicknessInfo
- Publication number
- JPS59192904A JPS59192904A JP6544683A JP6544683A JPS59192904A JP S59192904 A JPS59192904 A JP S59192904A JP 6544683 A JP6544683 A JP 6544683A JP 6544683 A JP6544683 A JP 6544683A JP S59192904 A JPS59192904 A JP S59192904A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film thickness
- polarized
- film
- reflected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は薄膜の膜厚を測定する装置に関し、特に偏光を
利用して測定精度の向上を図った膜厚測定装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a device for measuring the thickness of a thin film, and more particularly to a film thickness measuring device that uses polarized light to improve measurement accuracy.
半導体装置の製造工程では、半導体ウヱーノ・表面に薄
膜を形成することが必須のものとされているが、この薄
膜の膜厚が半導体装置の特性に大きな影響を及ぼすこと
から、膜厚を高精度にコントロールする必要がある。こ
のため、例えばＲＦスパッタ法によるＳｉｎ、膜の生成
圧おいて、従来ではスパッタ時間を管理することにより
膜厚をコントロールしているが、温度や真空度等の他の
要因も加わるために時間管理だけで高精度なコントロー
ルを行なうことは困難であり、またバッチ間の膜厚のば
らづきが大きいという問題もある。In the manufacturing process of semiconductor devices, it is essential to form a thin film on the surface of the semiconductor, but since the thickness of this thin film has a large effect on the characteristics of the semiconductor device, the film thickness must be determined with high precision. need to be controlled. For this reason, for example, regarding the production pressure of a Sin film using RF sputtering, the film thickness is conventionally controlled by managing the sputtering time, but since other factors such as temperature and degree of vacuum are also added, time management is required. It is difficult to perform high-precision control with only one method, and there is also the problem of large variations in film thickness between batches.
このような問題を解決するために、薄膜の形成と同時に
膜厚を非接触で測定する膜厚測定装置が提案されている
。これは、例えばスパッタＳｉｎ。In order to solve such problems, a film thickness measuring device has been proposed that measures the film thickness in a non-contact manner at the same time as forming a thin film. This is, for example, sputtering Sin.
膜生成装置のチャンバの一部に透明な窓を設けておき、
チャンバ外に設置したレーザ発振器からのレーザ光をこ
の窓を通してチャンバ内の半導体ウェーハ表面に照射す
る一方、薄膜により生じたレーザ光の干渉光をチャンバ
外の別の箇所に設けたセンサにて検出し、これを解析し
て薄膜の膜厚を測定しようとするものである。A transparent window is provided in a part of the chamber of the film generation device,
Laser light from a laser oscillator installed outside the chamber is irradiated onto the surface of the semiconductor wafer inside the chamber through this window, while interference light of the laser light generated by the thin film is detected by a sensor installed at another location outside the chamber. , this is analyzed to measure the thickness of the thin film.
この測定装置によれば、時々刻々と変化される膜厚を直
ちに測定できるため、各ウェーハ間における薄膜膜厚の
ばらつきを防止できるという効果が得られる。しかしな
がら、チャンバ内において生ずるプラズマの光や窓のガ
ラスにおける反射光等、前述の干渉光以外の光が雑音と
してセンサに入力されることを防止することが難かしい
ため、Ｓ／Ｎ比が悪くなって高精度な測定を行なうこと
が困難であり、場合によっては測定が不可能になること
もある。According to this measuring device, since the film thickness, which changes from time to time, can be immediately measured, it is possible to prevent variations in the thin film thickness between each wafer. However, it is difficult to prevent light other than the above-mentioned interference light from entering the sensor as noise, such as plasma light generated in the chamber and light reflected from the window glass, resulting in a poor S/N ratio. Therefore, it is difficult to perform highly accurate measurements, and in some cases, measurements may be impossible.
〔発明の目的〕
本発明の目的は膜厚の測定時における雑音としての光が
センサに入力されることを防止し、これにより膜厚の測
定精度を向上することができる膜厚測定装置を提供する
ことにある。[Object of the Invention] An object of the present invention is to provide a film thickness measuring device that can prevent light as noise from being input to the sensor during film thickness measurement, thereby improving film thickness measurement accuracy. It's about doing.
また本発明の他の目的は膜厚の測定精度を向上すること
により膜厚の均一化を図り、半導体装置の信頼性の向上
に寄与することができる膜厚測定装置を提供することに
ある。Another object of the present invention is to provide a film thickness measuring device that can make the film thickness uniform by improving the film thickness measurement accuracy and contribute to improving the reliability of semiconductor devices.
不発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of non-invention are:
It will become clear from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、偏光レーザ発振器を光源としてこの光源と被
測定膜との間にビームスブリックと１／４人板を介装す
る一方、被測定膜からの干渉反射光を検出するセンナの
前に直線偏光板を設置することにより、被測定膜に照射
されて反射された光だけを確実に検出でき、これにより
Ｓ／Ｎ比を向上して膜厚の測定精度の向上を達成するも
のである。In other words, a polarized laser oscillator is used as a light source, and a beam subric and a quarter plate are interposed between the light source and the film to be measured, while a linear polarizing plate is placed in front of the sensor that detects the interference reflected light from the film to be measured. By installing this, it is possible to reliably detect only the light that is irradiated onto the film to be measured and reflected, thereby improving the S/N ratio and achieving an improvement in the measurement accuracy of the film thickness.
図は本発明の膜厚測定装置の一実施例を示し、所謂ＲＦ
スパッタ法による薄膜形成装置に適用した例である。図
において、薄膜形成袋装置１は、チャンバ２内に下部電
極３と上部電極４を有しており、半導体ウェーハ５は下
部電極３上に載置し、上部電極４との間に所定の高周波
電力が印加されるようにしている。また、チャンバ１に
はガス供給口６と排気ロアが開設され、チャンバ２内を
所要のガス雰囲気の低圧状態に保持できる。したがって
、チャンバ２内をこの状態に保ちながら両電極３，４間
に高周波電力を供給すれば、両電極間にプラズマが発生
し、活性化された原子によりスパッタ薄膜、例えばＳｉ
ｎ、膜８が半導体ウェーハ５表面に形成される。The figure shows an embodiment of the film thickness measuring device of the present invention, which is a so-called RF
This is an example applied to a thin film forming apparatus using a sputtering method. In the figure, a thin film forming bag device 1 has a lower electrode 3 and an upper electrode 4 in a chamber 2, a semiconductor wafer 5 is placed on the lower electrode 3, and a predetermined high frequency Power is applied. Further, the chamber 1 is provided with a gas supply port 6 and an exhaust lower, so that the inside of the chamber 2 can be maintained in a low pressure state with a required gas atmosphere. Therefore, if high frequency power is supplied between both electrodes 3 and 4 while maintaining the inside of chamber 2 in this state, plasma is generated between both electrodes, and the activated atoms create a sputtered thin film, for example, Si.
n, a film 8 is formed on the surface of the semiconductor wafer 5.
一方、膜厚測定装置１ｏは前記半導体ウェーハ５の表面
に対向するチャンバ２の一部に穴９を形成し、かつこの
穴９に１／４人（４分の１波長）板１１と保護用のビュ
ーボートガラス１２を嵌着し、上部電極４０間隙を通し
て半導体ウェーハ５の表面一部を透視できるようにして
いる。そして、このビューボートガラス１２上には反射
ミラー１３を４？や角度で設置すると共に、前記チャン
バ２の側方に配設した偏光レーザ発振器１４から射出さ
れるレーザ光りをこの反射ミラー１３で反射させた上で
ビー−ボートガラス１２と１／４人板１１を通してチャ
ンバ２内に導（ようにしている。前記偏光レーザ発振器
１４は、本例ではＰ偏光を出力するように構成しており
、その前方位置にはプリズム状の偏光ビームスプリッタ
１５を配置している。また、この偏光ビームスプリッタ
１５の直角方向の側部にはＳ偏光を通過させる直線偏光
板１６および前記レーザ光のスペクトルに合わせた干渉
フィルタ１７を直列に配置し、更に光センサ１８を配置
している。この光センサ１８にはアン７’ｌ ９ 、
Ａ／Ｄ変換器２ｏおよびマイクロコンピュータ２１を接
続し、光センサ１８の検出信号に基づいて膜厚を演算で
きるようにしている。On the other hand, the film thickness measuring device 1o has a hole 9 formed in a part of the chamber 2 facing the surface of the semiconductor wafer 5, and a 1/4 person (1/4 wavelength) plate 11 and a protective plate 11 in the hole 9. A view boat glass 12 is fitted so that a part of the surface of the semiconductor wafer 5 can be seen through the gap between the upper electrodes 40. Then, on this view boat glass 12, there are 4 reflection mirrors 13? At the same time, the laser beam emitted from the polarized laser oscillator 14 arranged on the side of the chamber 2 is reflected by the reflecting mirror 13, and then the be-boat glass 12 and the quarter board 11 are installed. In this example, the polarized laser oscillator 14 is configured to output P-polarized light, and a prismatic polarized beam splitter 15 is disposed in front of it. A linear polarizing plate 16 for passing S-polarized light and an interference filter 17 matching the spectrum of the laser beam are arranged in series on the side of the polarizing beam splitter 15 in the orthogonal direction, and an optical sensor 18 is further arranged. This optical sensor 18 has 7′l 9 ,
The A/D converter 2o and the microcomputer 21 are connected so that the film thickness can be calculated based on the detection signal of the optical sensor 18.
以上の構成によれば、偏光レーザ発振器１４からのＰ偏
光は偏光ビームスプリッタ１５を通り、反射ミラー１３
にて反射された上でピー−ボートガラス１２および１／
４人板１１を通ってチャンバ２内に導かれる。このとき
、偏光ば１／４人板１１０作用によって円偏光とされ、
半導体ウェーハ５の表面に照射される。そして、ウェー
ハ５の表面に形成されつつあるＳｉｎ、膜８の膜厚に応
じて干渉が生起される。この干渉を生起したウェーハ５
の反射光は逆の経路で１／４人板１１．ビューボートガ
ラス１２を通ってチャンバ外に導出される。このとき、
偏光は１／４人板１１の作用によってＳ偏光とされ、反
射ミラー１３によって反射され更に偏光ビームスプリッ
タエ５により側方へ向けて反射される。そして、直線偏
光板１６および干渉フィルタ１７を通った上で光センサ
１８によって検出される。光センサ１８は光強度に応じ
た信号を出力し、アンプ１９ 、 Ａ／Ｄ変換器２゜お
よびマイクロコンピュータ２１によって膜厚として出力
することになる。According to the above configuration, the P-polarized light from the polarized laser oscillator 14 passes through the polarized beam splitter 15 and passes through the reflecting mirror 13.
pea boat glass 12 and 1/
It is guided into the chamber 2 through the four-person board 11. At this time, the polarized light becomes circularly polarized light by the action of the quarter plate 110,
The surface of the semiconductor wafer 5 is irradiated. Then, interference occurs depending on the thickness of the Sin film 8 that is being formed on the surface of the wafer 5. Wafer 5 that caused this interference
The reflected light passes through the opposite path to the 1/4 person board 11. It is led out of the chamber through the view boat glass 12. At this time,
The polarized light is converted into S-polarized light by the action of the quarter plate 11, reflected by the reflection mirror 13, and further reflected laterally by the polarization beam splitter 5. The light then passes through a linear polarizing plate 16 and an interference filter 17 and is detected by an optical sensor 18 . The optical sensor 18 outputs a signal corresponding to the light intensity, and the amplifier 19, A/D converter 2°, and microcomputer 21 output the signal as a film thickness.
そして、かかる測定において、偏光レーザ発振器１４か
ら出力されたレーザ光の一部が偏光ビームスプリッタ１
５やビューボートガラス１２によって反射されることが
あり、この雑音光がウェーハ表面から反射されてきた測
定光に混入することも生ずるが、雑音光はＰ偏光のまま
であるため直線偏光板１６を通過することはできず、セ
ンサ１８に到達しない。同様にチャンバ２内において生
じるプラズマ光が測定光に混入するが、これらの光は直
線偏光状態にあり、したがって１７４人板１ｌを通って
チャンバ２外に出た時点で測定光とは偏光状態が相違さ
れた円偏光となり直線偏光板１６によって遮断される。In this measurement, a part of the laser beam output from the polarization laser oscillator 14 is transmitted to the polarization beam splitter 1.
5 and the view boat glass 12, and this noise light may be mixed into the measurement light reflected from the wafer surface. However, since the noise light remains P-polarized light, the linear polarizing plate 16 is It cannot pass through and will not reach the sensor 18. Similarly, the plasma light generated in chamber 2 mixes with the measurement light, but these lights are in a linearly polarized state, so when they pass through the 174-person board 1l and exit the chamber 2, the polarization state is different from that of the measurement light. The resulting circularly polarized light is blocked by the linear polarizing plate 16.
このとき、Ｓ成分が通過されることがあっても、干渉フ
ィルタ１７によってスペクトル幅が制約されるためここ
で確実に遮断される。At this time, even if the S component is passed, the spectrum width is restricted by the interference filter 17, so it is reliably blocked.
したがって、ウェーハ５表面の反射光（測定光）のみが
センサ１８に到達され、それ以外の光は確実に遮断され
ることになるので、Ｓ／Ｎ比は極めて良好なものとなり
、膜厚の測定精度を格段に向上することができる。また
、膜厚の測定精度の向上に伴なって薄膜の均一化を実現
でき、これにより半導体装置の特性の安定化、信頼性の
向上を達成できる。Therefore, only the reflected light (measuring light) from the surface of the wafer 5 reaches the sensor 18, and other light is reliably blocked, resulting in an extremely good S/N ratio and a measurement of film thickness. Accuracy can be significantly improved. Further, as the accuracy of measuring the film thickness is improved, it is possible to make the thin film uniform, thereby stabilizing the characteristics of the semiconductor device and improving its reliability.
＋１１ 偏光レーザ発振器のレーザ光を１／４人板を
通して被測定膜に照射させ、その反射光を再度１／４人
板を通し更に前記レーザ光と異なる偏光の直線偏光板を
通してセンサにより検出しているので、雑音としての反
射光やチャンバ内で発生される光が検出されることはな
く、膜厚の測定精度を極めて高いものにできる。+11 Laser light from a polarized laser oscillator is irradiated onto the film to be measured through a 1/4-person plate, and the reflected light is passed through the 1/4-person plate again and then detected by a sensor through a linear polarizing plate with a polarization different from that of the laser beam. Therefore, reflected light as noise and light generated within the chamber are not detected, making it possible to achieve extremely high film thickness measurement accuracy.
（２）膜厚の測定精度が向上できるので、製造される膜
厚の均一化を図ることができ、これにより半導体装置の
特性の安定化、信頼性の向上を達成できる。(2) Since the measurement accuracy of the film thickness can be improved, the thickness of the manufactured film can be made uniform, and thereby the characteristics of the semiconductor device can be stabilized and the reliability can be improved.
（３）膜厚の均一化を図ることができるので、半導体装
置の製造歩留を向上できる。(3) Since the film thickness can be made uniform, the manufacturing yield of semiconductor devices can be improved.
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。たとえば、偏光レーザ
発振器がＳ偏光を出力するように構成する一方、直線偏
光板がＰ偏光を通過できるように構成してもよい。また
、センサの分光感度特性がシャープにレーザ光に合致す
るものであれば干渉フィルタを省略することもできる。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, the polarization laser oscillator may be configured to output S-polarized light, while the linear polarizing plate may be configured to allow P-polarized light to pass through. Furthermore, if the spectral sensitivity characteristics of the sensor sharply match the laser beam, the interference filter can be omitted.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体ウェーへの薄
膜形成技術に適用した場合について説明したが、それに
限定されるものではなく、たとえばエツチング装置等に
用いて膜厚を所要厚さにまで低減する際のコントロール
にも適用でき、更に半導体ウェーハ以上の表面に薄膜を
形成する技術にも適用できる。The above explanation has mainly been about the application of the invention made by the present inventor to the field of application, which is the field of application of the invention, which is the technology for forming thin films on semiconductor wafers. It can also be used to control the reduction of film thickness to a required thickness, and can also be applied to techniques for forming thin films on surfaces larger than semiconductor wafers.
図は本発明装置の一実施例の構成図である。
１・・・薄膜形成装置、２・・・チャンバ、５・・・ウ
ェーハ、８・・・薄膜（Ｓｉｎ、膜）、１０・・・膜厚
測定装置、１１・・・１７４人板、１２・・・ビューボ
ートガラス、１４・・・偏光レーザ発振器、１５・・・
偏光ビームスプリッタ、１６・・・直線偏光板、１７・
・・干渉フィルタ、１８・・・光センサ、２１・・・マ
イクロコンピュータ。The figure is a configuration diagram of an embodiment of the device of the present invention. DESCRIPTION OF SYMBOLS 1... Thin film forming device, 2... Chamber, 5... Wafer, 8... Thin film (Sin, film), 10... Film thickness measuring device, 11... 174 person board, 12... ...View boat glass, 14...Polarized laser oscillator, 15...
Polarizing beam splitter, 16... linear polarizing plate, 17.
...Interference filter, 18... Optical sensor, 21... Microcomputer.
Claims (1)
被測定膜の膜厚を測定する装置であって、Ｐ偏光又はＳ
偏光を射出する偏光レーザ発振器と、この偏光レーザ発
振器と前記被測定膜との間に配設した偏光ビームスプリ
ッタ及び１７４人板と、ビームスプリッタにより反射さ
れた前記被測定膜からの反射光路上に配設した直線偏光
板と、この直線偏光板の後側に設けた光センサを備える
ことを特徴とする膜厚測定装置。 ２、前記反射光路の一部には偏光レーザ発振器のレーザ
光のスペクトル圧合致した干渉フィルタを配設してなる
特許請求の範囲第１項記載の膜厚測定装置。 ３、直線偏光板は偏光レーザ発振器による偏光とは反対
の偏光を通過し得るよう構成してなる特許請求の範囲第
１項又は第２項記載の膜厚測定装置。[Scope of Claims] 1. An apparatus for measuring the film thickness of a film to be measured by irradiating light onto a film to be measured and detecting the reflected interference light, the apparatus comprising P polarized light or S polarized light.
A polarized laser oscillator that emits polarized light, a polarized beam splitter and a plate arranged between the polarized laser oscillator and the film to be measured, and a light path reflected from the film to be measured that is reflected by the beam splitter. A film thickness measuring device comprising a linearly polarizing plate and an optical sensor provided on the rear side of the linearly polarizing plate. 2. The film thickness measuring device according to claim 1, wherein a part of the reflected optical path is provided with an interference filter that matches the spectrum of the laser light from the polarized laser oscillator. 3. The film thickness measuring device according to claim 1 or 2, wherein the linearly polarizing plate is configured to pass polarized light opposite to that of the polarized laser oscillator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6544683A JPS59192904A (en) | 1983-04-15 | 1983-04-15 | Device for measuring film thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6544683A JPS59192904A (en) | 1983-04-15 | 1983-04-15 | Device for measuring film thickness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59192904A true JPS59192904A (en) | 1984-11-01 |
Family
ID=13287365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6544683A Pending JPS59192904A (en) | 1983-04-15 | 1983-04-15 | Device for measuring film thickness |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59192904A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948259A (en) * | 1989-01-14 | 1990-08-14 | Leybold Aktiengesellschaft | Method and apparatus for monitoring layer erosion in a dry-etching process |
| JPH0344842A (en) * | 1989-07-12 | 1991-02-26 | Matsushita Electric Ind Co Ltd | Manufacture of information carrying disk |
| JPH03164497A (en) * | 1989-11-24 | 1991-07-16 | Res Dev Corp Of Japan | Epitaxial growth method of compound crystal |
| JPH0416704A (en) * | 1990-05-10 | 1992-01-21 | Matsushita Electric Ind Co Ltd | Optical film thickness monitor and sputtering apparatus using the monitor |
| JPH04105915U (en) * | 1991-02-21 | 1992-09-11 | スズキ株式会社 | oil strainer |
| JPH08315432A (en) * | 1995-05-15 | 1996-11-29 | Nippondenso Co Ltd | Apparatus for producing optical information recording medium and production method therefor |
-
1983
- 1983-04-15 JP JP6544683A patent/JPS59192904A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948259A (en) * | 1989-01-14 | 1990-08-14 | Leybold Aktiengesellschaft | Method and apparatus for monitoring layer erosion in a dry-etching process |
| JPH0344842A (en) * | 1989-07-12 | 1991-02-26 | Matsushita Electric Ind Co Ltd | Manufacture of information carrying disk |
| JPH03164497A (en) * | 1989-11-24 | 1991-07-16 | Res Dev Corp Of Japan | Epitaxial growth method of compound crystal |
| JPH0751478B2 (en) * | 1989-11-24 | 1995-06-05 | 新技術事業団 | Epitaxial growth method of compound crystal |
| JPH0416704A (en) * | 1990-05-10 | 1992-01-21 | Matsushita Electric Ind Co Ltd | Optical film thickness monitor and sputtering apparatus using the monitor |
| JPH04105915U (en) * | 1991-02-21 | 1992-09-11 | スズキ株式会社 | oil strainer |
| JPH08315432A (en) * | 1995-05-15 | 1996-11-29 | Nippondenso Co Ltd | Apparatus for producing optical information recording medium and production method therefor |
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