JPS5919252A - Control method of semiconductor laser array output - Google Patents
Control method of semiconductor laser array outputInfo
- Publication number
- JPS5919252A JPS5919252A JP57127266A JP12726682A JPS5919252A JP S5919252 A JPS5919252 A JP S5919252A JP 57127266 A JP57127266 A JP 57127266A JP 12726682 A JP12726682 A JP 12726682A JP S5919252 A JPS5919252 A JP S5919252A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- output
- semiconductor
- signals
- lasers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Dot-Matrix Printers And Others (AREA)
- Laser Beam Printer (AREA)
- Optical Head (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本冗明は半導体レーザーアレイを光源として用いる清報
記録方法における半導体レーザーアレイ出力制叫j方法
に関する、。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser array output suppression method in a news recording method using a semiconductor laser array as a light source.
従来、単一の半導体レーザーケ用(・た光情報記録装置
においては半導体レーザーのモニター出力を検出して半
導体レーザーの出力制伺)を行なっていた。しかしこの
光情報記録装置では単一の半導体レーザーを用いている
ため、記録速度か速くならない。また半導体レーサーア
レイを用(・た光情報記録装置においては半導体レーサ
ーアレイの複数の出力のうち1個の出力を検出して半導
体レーザーアレイの全出力?一定に?l1ll nMI
する方法が採ら」1ている。しかしこの方法では半導体
レーサーアレイは半導体レーザー他1々の%けのバラツ
キがあるため、すべての半導体レーザーの出力を一定に
11ilJ I却することは困難である。Conventionally, a single semiconductor laser was used (in optical information recording devices, the output of the semiconductor laser was controlled by detecting the monitor output of the semiconductor laser). However, since this optical information recording device uses a single semiconductor laser, the recording speed cannot be increased. In addition, in an optical information recording device using a semiconductor laser array, one output out of multiple outputs of the semiconductor laser array is detected and the total output of the semiconductor laser array is kept constant.
A method has been adopted to do so. However, in this method, since the semiconductor laser array has variations of 11% from the semiconductor lasers and others, it is difficult to set the outputs of all the semiconductor lasers to a constant value.
本発明は上記のような欠点を改害し、半導体レーサー1
固々の特注のバラツキによる影響が7’x、 <て比教
的簡単な回路で実姉できる半導体レーザーアレイ出力制
御1141方法を提供することな目的とする。The present invention improves the above-mentioned drawbacks and provides a semiconductor racer 1.
The purpose of this invention is to provide a semiconductor laser array output control method that can be implemented using a simple circuit, since the effects of custom-made variations are less than 7'x.
以下図面を参照しながら本発明について実施例をあげて
直間する。Embodiments of the present invention will be described below with reference to the drawings.
3□ 1図は単一の半導体レーザーを用いた光情報記録
装置の一例を示す。変調回路1は一子計q4被から入力
さねた又字消)・反により半纏体レーザー2ケr ii
’・″りする。半導体レーサー2から出力さJする。3□ Figure 1 shows an example of an optical information recording device using a single semiconductor laser. The modulation circuit 1 has a half-coupled laser 2 ker ii due to the input from the single child q4
'・'' is output from the semiconductor racer 2.
文字l’A# ;tMに従って変調を受けたレーザービ
ームは切物レンズ3により所>Eビーム径の平行光にさ
Jl、回転多面鋭あるいはポログラムの回折現象を利用
した走)−光学系4にまり主走彌方向に一定の速度でj
重力さねる。この走り、光学系4からのレーザーチップ
、は、J・θし/ズ5により1回転している感光体ドラ
ムより/Iる記録体6上にスポットとして結flさ牙7
文字博報が記録体6に記録される。The laser beam modulated according to the character l'A#; tM is converted into parallel light with a beam diameter of >E by a cut-off lens 3, and is converted into a parallel beam using the diffraction phenomenon of a rotating polygonal sharpness or a porogram)-to an optical system 4. j at a constant speed in the main direction
I feel gravity. During this run, the laser chip from the optical system 4 is formed as a spot on the recording medium 6 by the photoreceptor drum, which is rotated once by the J·θ angle 5.
Character information is recorded on the record body 6.
この+≠−の半導体レーザー馨用いた光j%i’報記録
装置の低速1’l二を改善するために複数の半屏体し−
サーンモノンリノクにアレイ化した半υ−h体レーザー
アレイが開発さ牙1てきた。In order to improve the low speed of the optical information recording device using this +≠- semiconductor laser, a plurality of half-folds were used.
A semi-υ-h body laser array arrayed in a solar cell has been developed.
4′2図は半導体レーザーアレイの一例を示す。Figure 4'2 shows an example of a semiconductor laser array.
この1タリは31固の半導体レーサーンアレイ化したも
のであり、n 亀(% 11 + n −GaAs基
板12.n−Ga1−y Aly As 13 、 G
a1−x A7x As (但しx<y)14゜P −
Ga1−y AlyAs 15 、 P 這41.6
1〜1.65 ’を積層したレーサーチップで楢成さ
Jlている(厳札にはもう少し懐郷な)4Q造になって
いるが、その説明は省略する)。このレーザーチップ(
13つの半導体レーサーのアイル−/ヨ/をよくするた
めに荷17.18か設けており、各半導体レーザーは発
光部]9〜21よりレーザー光ケ放射する。そしてレー
サーチップはP電憾161〜]軛を下にしてサフマウン
ト部22にIn 等で接着さJする。This one-tally is a 31-layer semiconductor laser array, and is made of n-Ga(% 11 + n-GaAs substrate 12.n-Ga1-y Aly As 13, G
a1-x A7x As (x<y) 14゜P -
Ga1-y AlyAs 15, P 41.6
It is made of 4Q construction (a little more nostalgic for the issue), which is constructed with racer chips laminated with 1 to 1.65', but I will omit that explanation). This laser chip (
In order to improve the aisles of the 13 semiconductor lasers, loads 17 and 18 are provided, and each semiconductor laser emits laser light from light emitting parts] 9 to 21. Then, the racer chip is glued to the surf mount part 22 with In or the like with the yoke facing down.
この半纏体レーザーアレイの各半導体レーザーは各々独
立に駆動、変調ができて同時に抜ばの情報を光16号と
して故旧できる。Each of the semiconductor lasers in this semi-integrated laser array can be independently driven and modulated, and at the same time, information can be transmitted as optical signal 16.
このような半纏体レーザーアレイを用いた光清獄記録装
置の一例を、1(’ 3図に示す。半纏体レーザーアレ
イ23の各半導体レーザー231〜233は図示しない
か、独立に駆動回路で)駆動さ牙1て匿調回路で変調1
呂号により変調される。半導体レーザー231〜235
を山男−したレーサーと−11は対!l/lレノズレン
で平行光にさ1+るが、こjlらの平行光は対物レンズ
24の光軸にズ・jする角度を異にする。対!吻し/ズ
24の焦点短棚をJ−1,各半尋体し−ザー231〜2
350間隅をdとすると、対物レンズ24を出た谷平行
光の角度差Δθは
、11
となる。対物レンズ24からの各平行ブCは回転多面戎
よりなる走査光学系25により偏光さ牙する。月・3図
では回転多面硯25が反射面のみ示さ旧ている。An example of an optical recording device using such a semi-integrated laser array is shown in Fig. 1 ('3.Each semiconductor laser 231 to 233 of the semi-integrated laser array 23 is not shown or is driven by an independent drive circuit). Driven fan 1 and modulation circuit 1
Modulated by Rogo. Semiconductor lasers 231-235
The racer who was a mountain man and -11 are a match! The l/l lens forms parallel lights, but these parallel lights have different angles to the optical axis of the objective lens 24. versus! The focal short shelf of the nose/zu 24 is J-1, each half-fathom body is 231-2
If the 350-degree corner is d, then the angle difference Δθ of the valley parallel light exiting the objective lens 24 is 11. Each parallel beam C from the objective lens 24 is polarized by a scanning optical system 25 consisting of a rotating polygon. In Figure 3, only the reflective surface of the rotary polygon inkstone 25 is shown.
10転多面鋭25で゛・偏向さJlた谷平行光はJOし
/ズ26 により、1」転している感光体ドラムより
なる記録体27」二に独立したスポットとして結像さf
l。The valley parallel light deflected by the 10-turn multifaceted sharp 25 is imaged as an independent spot by the JO lens 26 on a recording medium 27 consisting of a photosensitive drum which is turned by 1".
l.
回転多面鋭250回転に伴なって第3図の垂直方間に主
疋七さ牙1て情報が鵡、光体ドラム27に記録さ」する
。主走畳さiするスポットの間隔△はJOレンズ26
り焦点距離をf2 とすると1、t2
Δ中□ d
1
となり、走會スポットの間隔へは半導体レーザーの間隔
dにh/f+を乗じた値となる。(f、=l。Along with the 250 rotations of the rotating multifaceted blade, information is recorded on the optical drum 27 in the vertical direction in FIG. The interval △ of the spots for main running is JO lens 26
When the focal length is f2, it becomes 1, t2 □ d 1 , and the distance between the traveling spots is equal to the distance d between the semiconductor lasers multiplied by h/f+. (f,=l.
mmr h = 200 mm、 d == 10
μm とすると、622111mとなり、2 mm
の間隔をおいて亜ぶ3 (161のスポットがその配列
方向と直角な方向に〕M 畳’a hることになる。こ
のような状態で情報のb己録ケ行うと、各走査線の間隔
があきすき′てしまう。この解決策として矛6図に示す
ように半導体レーザー231〜230の配列方向な副走
梵力向に7寸しである角度θたけ1頃けて設定すること
が知ら牙]ている。このよ 。mmr h = 200 mm, d = = 10
If it is μm, it becomes 622111m, which is 2 mm
This means that the 161 spots are spaced at intervals of 3 (161 spots in a direction perpendicular to the direction in which they are arranged).If information is recorded in this state, each scanning line will be As a solution to this problem, as shown in Figure 6, it is possible to set an angle θ of about 1, which is about 7 inches in the direction of the sub-stroke force in the arrangement direction of the semiconductor lasers 231 to 230. It's here.
うにすると、副坩葺方向に間隔のあかンよい主矩畳がで
きる。副走食方向のRr女走追1勝間隔ンlとすると、
φ”’S11 −
△
に設定すねはよい。各半導体レーサー231〜235を
1台り貧りたライン情報で各々独立に変調ず牙1は1回
り王走倉により半導体レーサーの1回数分たけ主走宜線
か同時に記録される。By doing this, a main rectangular tatami with good spacing in the direction of the secondary crucible can be created. If the distance between Rr women's races and races in the sub-race direction is 1, it is good to set φ”'S11 − △. Each semiconductor racer 231 to 235 is not modulated independently with poor line information. Fang 1's first lap was recorded at the same time as the main line for one lap of the semi-conductor racer.
3″4図は本発明の′夷厘回路例で゛あり、」・5図は
そのタイミングチャートで゛ある。この例では」二^己
t’e l杓報記4ぺ、gg、置において、半導体レー
ザー231〜23乙のすべての出力モニター光が光検出
器31に大東するように光学系が溝成さ」する。」・5
図(イ)(ロ) (−)は半導体レーサー231〜23
6の出力fltll餌1及びビーム位置検出の為の変調
18号a、b1〜b5であり、清報信号の無いブラノキ
/グ期間に発生ずる。半畳体レーサーZ31は変調信号
aにより変調回路で各十走宜毎に変調さ牙1、その出力
か光検j↓′1器31で・検出さ牙1て」・d幅器32
で、 j!、Bi幅さ牙1、回転多面蔑25による止定
悠に対応して半導体レーザー231〜236ケ情報信号
で変調する為の同ル」が増幅器:32の出力信号により
とら牙する。また半導体レーザー2;31〜236は俊
5同信号b1〜b3により変調回路で止定丘旬に順次変
調さ牙7る。つまり1回目の止定=では半導体レーサー
231か変調信号b1 で変調さ牙1.2回目の止定
宜で(j″半轡体レーザー232か変調信号b2 で
変調さ牙1.3回目の止定宜では半導体レーザー233
が変調16号b5 (:’!IL@さil、以下同様
な変調がくり返して行なわ才1イ)。Figures 3 and 4 are examples of the circuit of the present invention, and Figures 5 and 5 are timing charts thereof. In this example, the optical system is configured so that all the output monitor lights from the semiconductor lasers 231 to 23 are directed toward the photodetector 31 at the 4th position. "do. ”・5
Figures (a), (b), and (-) indicate semiconductor racers 231 to 23.
6 output fltll bait 1 and modulation No. 18 a, b1 to b5 for beam position detection, which are generated during the braking/g period when there is no alert signal. The half-containing body racer Z31 is modulated by the modulation signal a in the modulation circuit for each ten-stroke interval, and its output is detected by the optical detector j↓'1 device 31.
So, j! , Bi-width fan 1, and rotary polygon head 25 correspond to the output signal of semiconductor lasers 231 to 236 for modulating with information signals. Further, the semiconductor lasers 2; 31 to 236 are sequentially modulated by the modulation circuit according to the same signals b1 to b3. In other words, at the first stop, the semiconductor laser 231 modulates the modulation signal b1, and at the second stop, the laser 232 modulates the modulation signal b2. From time to time, semiconductor laser 233
is modulation No. 16 b5 (:'!IL@SIL, similar modulations will be repeated thereafter).
2・5図(ニ)(ホ)(へ)は1h報1′占号Cが4イ
る1時の変調信号であり、変調回路により半導体レーザ
ー231〜236を変調する。光検出器31は半導体レ
ーサー231〜233の出力を検出して矛5図(ト)に
示すような用力偽号?発生し、この出力信号は増幅器3
2で増幅される。Figures 2 and 5 (d), (e), and (f) are modulation signals for 1 o'clock in which the 1 hour signal 1' symbol C is 4, and the semiconductor lasers 231 to 236 are modulated by the modulation circuit. The photodetector 31 detects the outputs of the semiconductor racers 231 to 233 and generates a false signal as shown in Figure 5 (G). and this output signal is sent to amplifier 3.
It is amplified by 2.
す/プリノブホールド回路33〜35は変調信号b1〜
b3に同期してその発生期間で発生ずる矛5図(チ)
(’J) (ヌ)に示すようなサノプリノグ信号により
増幅器32の出力信号をす/プリノブホールドする。つ
まりザ/グリ/グホールド回路33は増幅器32の出力
信号により半導体レーザー231の変調信号b1 で
変調さ牙′また出力に対応する部分ゲサノプリ/グホー
ルドし、サノグリノグホールド回路34 は増幅6J
32の出力信号より半導体レーザー232の変調信号b
2 で変調さ、11だ出力に対応する部分をサンプル
ホールドし、す/プリフグボールド回路35は増幅器3
2の出力信号より半導体レーザー235の変W11信号
b3 で変調さ牙また出力に対応する>;ij分をザ
/プリ/グホールドする。ザ7プリングホールド回路、
33〜35の出力(g号は各々誤差」胃1ン1吊器、3
h〜38&ておいて丞竿゛亀圧と比較さ」1てその一4
差伯号が1駒、勤回路39〜41に加えられる。、駆戯
1回1−a39〜41はそ牙1ぞ」1半導体レーザー2
31〜233馨、駆動するが、その、駆動型77!iが
誤差増幅器36〜38の出力信号により1tll @l
さ」する。従ってザノプリノグボールド回路33〜35
の出力が常に基準電圧と等しくなるように制帥さ牙1て
半導体レーザー231〜233の出力が一定に制萌1さ
牙]る。The pre-knob hold circuits 33 to 35 receive modulation signals b1 to
Figure 5 of the Zuru that occurs in the period of occurrence in synchronization with b3 (H)
('J) The output signal of the amplifier 32 is held by the Sanoprinog signal as shown in (J). In other words, the output signal from the amplifier 32 is modulated by the modulation signal b1 of the semiconductor laser 231, and the output signal from the amplifier 32 is modulated by the output signal b1.
The modulation signal b of the semiconductor laser 232 is obtained from the output signal of the semiconductor laser 232.
2, sample and hold the part corresponding to the 11 output, and the S/Prifugal bold circuit 35
2 is modulated by the variable W11 signal b3 of the semiconductor laser 235, and the >; ij portion corresponding to the output is held. The 7 pull-hold circuit,
Outputs of 33 to 35 (g is the error for each) 1 stomach 1 suspension, 3
H ~ 38 & Compare with ``Kametsu'' 1 part 4
One piece of Sahakugo is added to Kin circuits 39-41. , 1 time 1-a39~41 is 1 semiconductor laser 2
31-233 Kaoru is driving, but the driving type is 77! i is 1tll @l due to the output signals of the error amplifiers 36 to 38
I'll do it. Therefore, Zanoprinog bold circuits 33-35
The outputs of the semiconductor lasers 231 to 233 are controlled to be constant so that the outputs of the semiconductor lasers 231 to 233 are always controlled to be equal to the reference voltage.
以上のように本発明によ牙1は光情報記録装置においで
、清・1・K信号の無(・期間に半導体レーヤーアレイ
の各半導体レーザーな止定育栂に1個づつ変ahs シ
てその出力τ光(火山器で検出しこの光抜出器の出力(
、q号により各半導体レーザーの出力を制御するので、
半畳体レーサー個々の特注のバラツキによる影響がなく
、しかも半導体レーサーの谷出力を別々に検出及び制御
卸する賜金に比べて簡単なIL!l Eで実施すること
ができる。As described above, according to the present invention, the fan 1 is changed one by one for each semiconductor laser in the semiconductor layer array during the absence of the Q, 1, and K signals in the optical information recording device. The output τ light (detected by the volcanic device and the output of this light extractor (
, q controls the output of each semiconductor laser, so
There is no influence from variations in the customization of each semi-conductor racer, and IL is simpler than that of a gift that separately detects and controls the valley output of a semiconductor racer! It can be carried out with lE.
3・1図は光情報記録装置の一例を示す斜視図、月・2
図は半導体レーサーアレイの一ト・1jを示す斜視図、
3・3図は光博報記録咬−の他の例な示す正面略図、1
・4図は本発明の実施回路例を]Jスずブロック図、」
・5図は同側のタイミングチャート、1′6図は本発明
ヲ説明するための図である。
231〜233・・・半導体レーサー、31・・・光検
出器。
32 ・・・増幅器、33〜35・・・す/グリフグ
ホールド回路、36〜38・・・誤差増幅器、39〜4
1・・・駆動回路。
如4園
もG闇Figure 3.1 is a perspective view showing an example of an optical information recording device;
The figure is a perspective view showing part 1j of the semiconductor racer array,
Figure 3.3 is a schematic front view showing another example of optical information recorder, 1
・Figure 4 shows an example of the implementation circuit of the present invention] J-Suz block diagram.
・Figure 5 is a timing chart for the same side, and Figures 1' and 6 are diagrams for explaining the present invention. 231-233...Semiconductor racer, 31...Photodetector. 32...Amplifier, 33-35...S/Griffuge hold circuit, 36-38...Error amplifier, 39-4
1... Drive circuit. The fourth garden is also G darkness
Claims (1)
を、移動する記録体上に土足食し清報信号によって前記
レーザーヒームを変調して清報の記録ケ行う光情報記録
装置において、i白銀信梠の無い期間に+:iJ記半導
体レーザーアレイの各半導体レーザーな王炬宜毎に1個
づつ変調してこ牙1もの半導体レーザーの出力馨光検出
益で検出し、この光検出器の出力信号により1lJ−半
導体レーザーの谷山力を制jI11すること乞特或とす
る半導体レーザープレイ出力1間1卸方云。In an optical information recording device that records a news report by placing an Oh laser beam emitted from a semiconductor laser onto a moving recording medium and modulating the laser beam with a news signal, during a period when there is no silver signal, +: The output signal of the semiconductor laser is modulated one by one for each semiconductor laser in the iJ semiconductor laser array, and the output signal of this photodetector is used to detect the output signal of the semiconductor laser. It is special to control the semiconductor laser play output for 1 hour and 1 hour.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57127266A JPS5919252A (en) | 1982-07-21 | 1982-07-21 | Control method of semiconductor laser array output |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57127266A JPS5919252A (en) | 1982-07-21 | 1982-07-21 | Control method of semiconductor laser array output |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5919252A true JPS5919252A (en) | 1984-01-31 |
Family
ID=14955762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57127266A Pending JPS5919252A (en) | 1982-07-21 | 1982-07-21 | Control method of semiconductor laser array output |
Country Status (1)
Country | Link |
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JP (1) | JPS5919252A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0165060A2 (en) * | 1984-06-13 | 1985-12-18 | Fuji Photo Film Co., Ltd. | Semiconductor laser beam scanning device |
JPS61243975A (en) * | 1985-04-20 | 1986-10-30 | Sony Corp | Method and apparatus for optical recording |
JPS63163872A (en) * | 1986-12-26 | 1988-07-07 | Toshiba Corp | Image forming device |
JPH0231343A (en) * | 1988-07-20 | 1990-02-01 | Sony Corp | Laser light source |
JPH02188277A (en) * | 1989-01-18 | 1990-07-24 | Fuji Xerox Co Ltd | Integrated light density control of laser |
JPH0388143A (en) * | 1989-08-31 | 1991-04-12 | Nec Corp | Multibeam optical head device |
JPH03120630A (en) * | 1989-10-04 | 1991-05-22 | Matsushita Electric Ind Co Ltd | Optical disk device |
US5432537A (en) * | 1992-05-18 | 1995-07-11 | Ricoh Company, Ltd. | Optical recording apparatus capable of controlling optical power of laser diode array |
EP0713214A3 (en) * | 1994-11-17 | 1996-09-18 | Matsushita Electric Ind Co Ltd | A method and an apparatus for controlling the power of a multibeam semiconductor laser device |
US5671077A (en) * | 1992-05-18 | 1997-09-23 | Ricoh Company, Ltd. | Multi-beam light source device and optical scanning apparatus using the multi-beam source device |
-
1982
- 1982-07-21 JP JP57127266A patent/JPS5919252A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0165060A2 (en) * | 1984-06-13 | 1985-12-18 | Fuji Photo Film Co., Ltd. | Semiconductor laser beam scanning device |
JPS61243975A (en) * | 1985-04-20 | 1986-10-30 | Sony Corp | Method and apparatus for optical recording |
JPS63163872A (en) * | 1986-12-26 | 1988-07-07 | Toshiba Corp | Image forming device |
JPH0712709B2 (en) * | 1986-12-26 | 1995-02-15 | 株式会社東芝 | Image forming device |
JPH0231343A (en) * | 1988-07-20 | 1990-02-01 | Sony Corp | Laser light source |
JPH02188277A (en) * | 1989-01-18 | 1990-07-24 | Fuji Xerox Co Ltd | Integrated light density control of laser |
JPH0388143A (en) * | 1989-08-31 | 1991-04-12 | Nec Corp | Multibeam optical head device |
JPH03120630A (en) * | 1989-10-04 | 1991-05-22 | Matsushita Electric Ind Co Ltd | Optical disk device |
US5432537A (en) * | 1992-05-18 | 1995-07-11 | Ricoh Company, Ltd. | Optical recording apparatus capable of controlling optical power of laser diode array |
US5671077A (en) * | 1992-05-18 | 1997-09-23 | Ricoh Company, Ltd. | Multi-beam light source device and optical scanning apparatus using the multi-beam source device |
EP0713214A3 (en) * | 1994-11-17 | 1996-09-18 | Matsushita Electric Ind Co Ltd | A method and an apparatus for controlling the power of a multibeam semiconductor laser device |
US5671209A (en) * | 1994-11-17 | 1997-09-23 | Matsushita Electric Industrial Co., Ltd. | Focusing time period and power control of a multilaser diode array |
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