JPS5919252A - Control method of semiconductor laser array output - Google Patents

Control method of semiconductor laser array output

Info

Publication number
JPS5919252A
JPS5919252A JP57127266A JP12726682A JPS5919252A JP S5919252 A JPS5919252 A JP S5919252A JP 57127266 A JP57127266 A JP 57127266A JP 12726682 A JP12726682 A JP 12726682A JP S5919252 A JPS5919252 A JP S5919252A
Authority
JP
Japan
Prior art keywords
semiconductor laser
output
semiconductor
signals
lasers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57127266A
Other languages
Japanese (ja)
Inventor
Isamu Shibata
柴田　勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP57127266A priority Critical patent/JPS5919252A/en
Publication of JPS5919252A publication Critical patent/JPS5919252A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Dot-Matrix Printers And Others (AREA)
  • Laser Beam Printer (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To eliminate the effect due to the characteristic variance of each semiconductor laser, by modulating each semiconductor laser of a semiconductor laser array for each main scanning and in a period containing no information signal, then detecting the modulated output through a photodetector, and controlling the output of each semiconductor laser with the output signal of the photodetector. CONSTITUTION:Semiconductor lasers 231, 232 and 233 are modulated by modulating b1, b2 and b3 with the 1st, 2nd and 3rd main scans respectively. Thereafter, the same modulation is repeated. A photodetector 31 detects the outputs of lasers 231-233 and amplifies them through an amplifier 32. Sampling/holding circuits 33-35 sample and hold the output signals of the amplifier 32 synchronously with the signals b1-b3 and by sampling signals produced in a due generating period. The output signals of the circuits 33-35 are compared with the reference voltage through error amplifiers 36-38. Then the error signals are applied to driving circuits 39-41, and these circuits drive the lasers 231-233 respectively.

Description

【発明の詳細な説明】 本冗明は半導体レーザーアレイを光源として用いる清報
記録方法における半導体レーザーアレイ出力制叫ｊ方法
に関する、。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser array output suppression method in a news recording method using a semiconductor laser array as a light source.

従来、単一の半導体レーザーケ用（・た光情報記録装置
においては半導体レーザーのモニター出力を検出して半
導体レーザーの出力制伺）を行なっていた。しかしこの
光情報記録装置では単一の半導体レーザーを用いている
ため、記録速度か速くならない。また半導体レーサーア
レイを用（・た光情報記録装置においては半導体レーサ
ーアレイの複数の出力のうち１個の出力を検出して半導
体レーザーアレイの全出力？一定に？ｌ１ｌｌ　ｎＭＩ
する方法が採ら」１ている。しかしこの方法では半導体
レーサーアレイは半導体レーザー他１々の％けのバラツ
キがあるため、すべての半導体レーザーの出力を一定に
１１ｉｌＪ　Ｉ却することは困難である。Conventionally, a single semiconductor laser was used (in optical information recording devices, the output of the semiconductor laser was controlled by detecting the monitor output of the semiconductor laser). However, since this optical information recording device uses a single semiconductor laser, the recording speed cannot be increased. In addition, in an optical information recording device using a semiconductor laser array, one output out of multiple outputs of the semiconductor laser array is detected and the total output of the semiconductor laser array is kept constant.
A method has been adopted to do so. However, in this method, since the semiconductor laser array has variations of 11% from the semiconductor lasers and others, it is difficult to set the outputs of all the semiconductor lasers to a constant value.

本発明は上記のような欠点を改害し、半導体レーサー１
固々の特注のバラツキによる影響が７’ｘ、　＜て比教
的簡単な回路で実姉できる半導体レーザーアレイ出力制
御１１４１方法を提供することな目的とする。The present invention improves the above-mentioned drawbacks and provides a semiconductor racer 1.
The purpose of this invention is to provide a semiconductor laser array output control method that can be implemented using a simple circuit, since the effects of custom-made variations are less than 7'x.

以下図面を参照しながら本発明について実施例をあげて
直間する。Embodiments of the present invention will be described below with reference to the drawings.

３□　１図は単一の半導体レーザーを用いた光情報記録
装置の一例を示す。変調回路１は一子計ｑ４被から入力
さねた又字消）・反により半纏体レーザー２ケｒ　ｉｉ
’・″りする。半導体レーサー２から出力さＪする。3□ Figure 1 shows an example of an optical information recording device using a single semiconductor laser. The modulation circuit 1 has a half-coupled laser 2 ker ii due to the input from the single child q4
'・'' is output from the semiconductor racer 2.

文字ｌ’Ａ＃　；ｔＭに従って変調を受けたレーザービ
ームは切物レンズ３により所＞Ｅビーム径の平行光にさ
Ｊｌ、回転多面鋭あるいはポログラムの回折現象を利用
した走）−光学系４にまり主走彌方向に一定の速度でｊ
重力さねる。この走り、光学系４からのレーザーチップ
、は、Ｊ・θし／ズ５により１回転している感光体ドラ
ムより／Ｉる記録体６上にスポットとして結ｆｌさ牙７
文字博報が記録体６に記録される。The laser beam modulated according to the character l'A#; tM is converted into parallel light with a beam diameter of >E by a cut-off lens 3, and is converted into a parallel beam using the diffraction phenomenon of a rotating polygonal sharpness or a porogram)-to an optical system 4. j at a constant speed in the main direction
I feel gravity. During this run, the laser chip from the optical system 4 is formed as a spot on the recording medium 6 by the photoreceptor drum, which is rotated once by the J·θ angle 5.
Character information is recorded on the record body 6.

この＋≠−の半導体レーザー馨用いた光ｊ％ｉ’報記録
装置の低速１’ｌ二を改善するために複数の半屏体し−
サーンモノンリノクにアレイ化した半υ−ｈ体レーザー
アレイが開発さ牙１てきた。In order to improve the low speed of the optical information recording device using this +≠- semiconductor laser, a plurality of half-folds were used.
A semi-υ-h body laser array arrayed in a solar cell has been developed.

４′２図は半導体レーザーアレイの一例を示す。Figure 4'2 shows an example of a semiconductor laser array.

この１タリは３１固の半導体レーサーンアレイ化したも
のであり、ｎ　亀（％　１１　＋　　ｎ　−ＧａＡｓ基
板１２．ｎ−Ｇａ１−ｙ　Ａｌｙ　Ａｓ　１３　、　Ｇ
ａ１−ｘ　Ａ７ｘ　Ａｓ　（但しｘ＜ｙ）１４゜Ｐ　−
Ｇａ１−ｙ　ＡｌｙＡｓ　１５　、　　Ｐ　這４１．６
１〜１．６５　　’を積層したレーサーチップで楢成さ
Ｊｌている（厳札にはもう少し懐郷な）４Ｑ造になって
いるが、その説明は省略する）。このレーザーチップ（
１３つの半導体レーサーのアイル−／ヨ／をよくするた
めに荷１７．１８か設けており、各半導体レーザーは発
光部］９〜２１よりレーザー光ケ放射する。そしてレー
サーチップはＰ電憾１６１〜］軛を下にしてサフマウン
ト部２２にＩｎ　　等で接着さＪする。This one-tally is a 31-layer semiconductor laser array, and is made of n-Ga(% 11 + n-GaAs substrate 12.n-Ga1-y Aly As 13, G
a1-x A7x As (x<y) 14゜P -
Ga1-y AlyAs 15, P 41.6
It is made of 4Q construction (a little more nostalgic for the issue), which is constructed with racer chips laminated with 1 to 1.65', but I will omit that explanation). This laser chip (
In order to improve the aisles of the 13 semiconductor lasers, loads 17 and 18 are provided, and each semiconductor laser emits laser light from light emitting parts] 9 to 21. Then, the racer chip is glued to the surf mount part 22 with In or the like with the yoke facing down.

この半纏体レーザーアレイの各半導体レーザーは各々独
立に駆動、変調ができて同時に抜ばの情報を光１６号と
して故旧できる。Each of the semiconductor lasers in this semi-integrated laser array can be independently driven and modulated, and at the same time, information can be transmitted as optical signal 16.

このような半纏体レーザーアレイを用いた光清獄記録装
置の一例を、１（’　３図に示す。半纏体レーザーアレ
イ２３の各半導体レーザー２３１〜２３３は図示しない
か、独立に駆動回路で）駆動さ牙１て匿調回路で変調１
呂号により変調される。半導体レーザー２３１〜２３５
を山男−したレーサーと−１１は対！ｌ／ｌレノズレン
で平行光にさ１＋るが、こｊｌらの平行光は対物レンズ
２４の光軸にズ・ｊする角度を異にする。対！吻し／ズ
２４の焦点短棚をＪ−１，各半尋体し−ザー２３１〜２
３５０間隅をｄとすると、対物レンズ２４を出た谷平行
光の角度差Δθは 、１１ となる。対物レンズ２４からの各平行ブＣは回転多面戎
よりなる走査光学系２５により偏光さ牙する。月・３図
では回転多面硯２５が反射面のみ示さ旧ている。An example of an optical recording device using such a semi-integrated laser array is shown in Fig. 1 ('3.Each semiconductor laser 231 to 233 of the semi-integrated laser array 23 is not shown or is driven by an independent drive circuit). Driven fan 1 and modulation circuit 1
Modulated by Rogo. Semiconductor lasers 231-235
The racer who was a mountain man and -11 are a match! The l/l lens forms parallel lights, but these parallel lights have different angles to the optical axis of the objective lens 24. versus! The focal short shelf of the nose/zu 24 is J-1, each half-fathom body is 231-2
If the 350-degree corner is d, then the angle difference Δθ of the valley parallel light exiting the objective lens 24 is 11. Each parallel beam C from the objective lens 24 is polarized by a scanning optical system 25 consisting of a rotating polygon. In Figure 3, only the reflective surface of the rotary polygon inkstone 25 is shown.

１０転多面鋭２５で゛・偏向さＪｌた谷平行光はＪＯし
／ズ２６　　により、１」転している感光体ドラムより
なる記録体２７」二に独立したスポットとして結像さｆ
ｌ。The valley parallel light deflected by the 10-turn multifaceted sharp 25 is imaged as an independent spot by the JO lens 26 on a recording medium 27 consisting of a photosensitive drum which is turned by 1".
l.

回転多面鋭２５０回転に伴なって第３図の垂直方間に主
疋七さ牙１て情報が鵡、光体ドラム２７に記録さ」する
。主走畳さｉするスポットの間隔△はＪＯレンズ２６　
　り焦点距離をｆ２　　とすると１、ｔ２ Δ中□　ｄ １ となり、走會スポットの間隔へは半導体レーザーの間隔
ｄにｈ／ｆ＋を乗じた値となる。（ｆ、＝ｌ。Along with the 250 rotations of the rotating multifaceted blade, information is recorded on the optical drum 27 in the vertical direction in FIG. The interval △ of the spots for main running is JO lens 26
When the focal length is f2, it becomes 1, t2 □ d 1 , and the distance between the traveling spots is equal to the distance d between the semiconductor lasers multiplied by h/f+. (f,=l.

ｍｍｒ　　ｈ　＝　２００　ｍｍ、　　ｄ　＝＝　１０
　μｍ　　とすると、６２２１１１ｍとなり、２　ｍｍ
の間隔をおいて亜ぶ３　（１６１のスポットがその配列
方向と直角な方向に〕Ｍ　畳’ａ　ｈることになる。こ
のような状態で情報のｂ己録ケ行うと、各走査線の間隔
があきすき′てしまう。この解決策として矛６図に示す
ように半導体レーザー２３１〜２３０の配列方向な副走
梵力向に７寸しである角度θたけ１頃けて設定すること
が知ら牙］ている。このよ　　　　。mmr h = 200 mm, d = = 10
If it is μm, it becomes 622111m, which is 2 mm
This means that the 161 spots are spaced at intervals of 3 (161 spots in a direction perpendicular to the direction in which they are arranged).If information is recorded in this state, each scanning line will be As a solution to this problem, as shown in Figure 6, it is possible to set an angle θ of about 1, which is about 7 inches in the direction of the sub-stroke force in the arrangement direction of the semiconductor lasers 231 to 230. It's here.

うにすると、副坩葺方向に間隔のあかンよい主矩畳がで
きる。副走食方向のＲｒ女走追１勝間隔ンｌとすると、 φ”’Ｓ１１　− △ に設定すねはよい。各半導体レーサー２３１〜２３５を
１台り貧りたライン情報で各々独立に変調ず牙１は１回
り王走倉により半導体レーサーの１回数分たけ主走宜線
か同時に記録される。By doing this, a main rectangular tatami with good spacing in the direction of the secondary crucible can be created. If the distance between Rr women's races and races in the sub-race direction is 1, it is good to set φ”'S11 − △. Each semiconductor racer 231 to 235 is not modulated independently with poor line information. Fang 1's first lap was recorded at the same time as the main line for one lap of the semi-conductor racer.

３″４図は本発明の′夷厘回路例で゛あり、」・５図は
そのタイミングチャートで゛ある。この例では」二＾己
ｔ’ｅ　ｌ杓報記４ぺ、ｇｇ、置において、半導体レー
ザー２３１〜２３乙のすべての出力モニター光が光検出
器３１に大東するように光学系が溝成さ」する。」・５
図（イ）（ロ）　（−）は半導体レーサー２３１〜２３
６の出力ｆｌｔｌｌ餌１及びビーム位置検出の為の変調
１８号ａ、ｂ１〜ｂ５であり、清報信号の無いブラノキ
／グ期間に発生ずる。半畳体レーサーＺ３１は変調信号
ａにより変調回路で各十走宜毎に変調さ牙１、その出力
か光検ｊ↓′１器３１で・検出さ牙１て」・ｄ幅器３２
で、　ｊ！、Ｂｉ幅さ牙１、回転多面蔑２５による止定
悠に対応して半導体レーザー２３１〜２３６ケ情報信号
で変調する為の同ル」が増幅器：３２の出力信号により
とら牙する。また半導体レーザー２；３１〜２３６は俊
５同信号ｂ１〜ｂ３により変調回路で止定丘旬に順次変
調さ牙７る。つまり１回目の止定＝では半導体レーサー
２３１か変調信号ｂ１　　で変調さ牙１．２回目の止定
宜で（ｊ″半轡体レーザー２３２か変調信号ｂ２　　で
変調さ牙１．３回目の止定宜では半導体レーザー２３３
が変調１６号ｂ５　　（：’！ＩＬ＠さｉｌ、以下同様
な変調がくり返して行なわ才１イ）。Figures 3 and 4 are examples of the circuit of the present invention, and Figures 5 and 5 are timing charts thereof. In this example, the optical system is configured so that all the output monitor lights from the semiconductor lasers 231 to 23 are directed toward the photodetector 31 at the 4th position. "do. ”・5
Figures (a), (b), and (-) indicate semiconductor racers 231 to 23.
6 output fltll bait 1 and modulation No. 18 a, b1 to b5 for beam position detection, which are generated during the braking/g period when there is no alert signal. The half-containing body racer Z31 is modulated by the modulation signal a in the modulation circuit for each ten-stroke interval, and its output is detected by the optical detector j↓'1 device 31.
So, j! , Bi-width fan 1, and rotary polygon head 25 correspond to the output signal of semiconductor lasers 231 to 236 for modulating with information signals. Further, the semiconductor lasers 2; 31 to 236 are sequentially modulated by the modulation circuit according to the same signals b1 to b3. In other words, at the first stop, the semiconductor laser 231 modulates the modulation signal b1, and at the second stop, the laser 232 modulates the modulation signal b2. From time to time, semiconductor laser 233
is modulation No. 16 b5 (:'!IL@SIL, similar modulations will be repeated thereafter).

２・５図（ニ）（ホ）（へ）は１ｈ報１′占号Ｃが４イ
る１時の変調信号であり、変調回路により半導体レーザ
ー２３１〜２３６を変調する。光検出器３１は半導体レ
ーサー２３１〜２３３の出力を検出して矛５図（ト）に
示すような用力偽号？発生し、この出力信号は増幅器３
２で増幅される。Figures 2 and 5 (d), (e), and (f) are modulation signals for 1 o'clock in which the 1 hour signal 1' symbol C is 4, and the semiconductor lasers 231 to 236 are modulated by the modulation circuit. The photodetector 31 detects the outputs of the semiconductor racers 231 to 233 and generates a false signal as shown in Figure 5 (G). and this output signal is sent to amplifier 3.
It is amplified by 2.

す／プリノブホールド回路３３〜３５は変調信号ｂ１〜
ｂ３に同期してその発生期間で発生ずる矛５図（チ）　
（’Ｊ）　（ヌ）に示すようなサノプリノグ信号により
増幅器３２の出力信号をす／プリノブホールドする。つ
まりザ／グリ／グホールド回路３３は増幅器３２の出力
信号により半導体レーザー２３１の変調信号ｂ１　　で
変調さ牙′また出力に対応する部分ゲサノプリ／グホー
ルドし、サノグリノグホールド回路３４　　は増幅６Ｊ
３２の出力信号より半導体レーザー２３２の変調信号ｂ
２　　で変調さ、１１だ出力に対応する部分をサンプル
ホールドし、す／プリフグボールド回路３５は増幅器３
２の出力信号より半導体レーザー２３５の変Ｗ１１信号
ｂ３　　で変調さ牙また出力に対応する＞；ｉｊ分をザ
／プリ／グホールドする。ザ７プリングホールド回路、
３３〜３５の出力（ｇ号は各々誤差」胃１ン１吊器、３
ｈ〜３８＆ておいて丞竿゛亀圧と比較さ」１てその一４
差伯号が１駒、勤回路３９〜４１に加えられる。、駆戯
１回１−ａ３９〜４１はそ牙１ぞ」１半導体レーザー２
３１〜２３３馨、駆動するが、その、駆動型７７！ｉが
誤差増幅器３６〜３８の出力信号により１ｔｌｌ　＠ｌ
さ」する。従ってザノプリノグボールド回路３３〜３５
の出力が常に基準電圧と等しくなるように制帥さ牙１て
半導体レーザー２３１〜２３３の出力が一定に制萌１さ
牙］る。The pre-knob hold circuits 33 to 35 receive modulation signals b1 to
Figure 5 of the Zuru that occurs in the period of occurrence in synchronization with b3 (H)
('J) The output signal of the amplifier 32 is held by the Sanoprinog signal as shown in (J). In other words, the output signal from the amplifier 32 is modulated by the modulation signal b1 of the semiconductor laser 231, and the output signal from the amplifier 32 is modulated by the output signal b1.
The modulation signal b of the semiconductor laser 232 is obtained from the output signal of the semiconductor laser 232.
2, sample and hold the part corresponding to the 11 output, and the S/Prifugal bold circuit 35
2 is modulated by the variable W11 signal b3 of the semiconductor laser 235, and the >; ij portion corresponding to the output is held. The 7 pull-hold circuit,
Outputs of 33 to 35 (g is the error for each) 1 stomach 1 suspension, 3
H ~ 38 & Compare with ``Kametsu'' 1 part 4
One piece of Sahakugo is added to Kin circuits 39-41. , 1 time 1-a39~41 is 1 semiconductor laser 2
31-233 Kaoru is driving, but the driving type is 77! i is 1tll @l due to the output signals of the error amplifiers 36 to 38
I'll do it. Therefore, Zanoprinog bold circuits 33-35
The outputs of the semiconductor lasers 231 to 233 are controlled to be constant so that the outputs of the semiconductor lasers 231 to 233 are always controlled to be equal to the reference voltage.

以上のように本発明によ牙１は光情報記録装置においで
、清・１・Ｋ信号の無（・期間に半導体レーヤーアレイ
の各半導体レーザーな止定育栂に１個づつ変ａｈｓ　シ
てその出力τ光（火山器で検出しこの光抜出器の出力（
、ｑ号により各半導体レーザーの出力を制御するので、
半畳体レーサー個々の特注のバラツキによる影響がなく
、しかも半導体レーサーの谷出力を別々に検出及び制御
卸する賜金に比べて簡単なＩＬ！ｌ　Ｅで実施すること
ができる。As described above, according to the present invention, the fan 1 is changed one by one for each semiconductor laser in the semiconductor layer array during the absence of the Q, 1, and K signals in the optical information recording device. The output τ light (detected by the volcanic device and the output of this light extractor (
, q controls the output of each semiconductor laser, so
There is no influence from variations in the customization of each semi-conductor racer, and IL is simpler than that of a gift that separately detects and controls the valley output of a semiconductor racer! It can be carried out with lE.

【図面の簡単な説明】[Brief explanation of the drawing]

３・１図は光情報記録装置の一例を示す斜視図、月・２
図は半導体レーサーアレイの一ト・１ｊを示す斜視図、
３・３図は光博報記録咬−の他の例な示す正面略図、１
・４図は本発明の実施回路例を］Ｊスずブロック図、」
・５図は同側のタイミングチャート、１′６図は本発明
ヲ説明するための図である。 ２３１〜２３３・・・半導体レーサー、３１・・・光検
出器。 ３２　　・・・増幅器、３３〜３５・・・す／グリフグ
ホールド回路、３６〜３８・・・誤差増幅器、３９〜４
１・・・駆動回路。 如４園 もＧ闇Figure 3.1 is a perspective view showing an example of an optical information recording device;
The figure is a perspective view showing part 1j of the semiconductor racer array,
Figure 3.3 is a schematic front view showing another example of optical information recorder, 1
・Figure 4 shows an example of the implementation circuit of the present invention] J-Suz block diagram.
・Figure 5 is a timing chart for the same side, and Figures 1' and 6 are diagrams for explaining the present invention. 231-233...Semiconductor racer, 31...Photodetector. 32...Amplifier, 33-35...S/Griffuge hold circuit, 36-38...Error amplifier, 39-4
1... Drive circuit. The fourth garden is also G darkness

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザープレイから発するＯｈのレーザーヒーム
を、移動する記録体上に土足食し清報信号によって前記
レーザーヒームを変調して清報の記録ケ行う光情報記録
装置において、ｉ白銀信梠の無い期間に＋：ｉＪ記半導
体レーザーアレイの各半導体レーザーな王炬宜毎に１個
づつ変調してこ牙１もの半導体レーザーの出力馨光検出
益で検出し、この光検出器の出力信号により１ｌＪ−半
導体レーザーの谷山力を制ｊＩ１１すること乞特或とす
る半導体レーザープレイ出力１間１卸方云。In an optical information recording device that records a news report by placing an Oh laser beam emitted from a semiconductor laser onto a moving recording medium and modulating the laser beam with a news signal, during a period when there is no silver signal, +: The output signal of the semiconductor laser is modulated one by one for each semiconductor laser in the iJ semiconductor laser array, and the output signal of this photodetector is used to detect the output signal of the semiconductor laser. It is special to control the semiconductor laser play output for 1 hour and 1 hour.
JP57127266A 1982-07-21 1982-07-21 Control method of semiconductor laser array output Pending JPS5919252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57127266A JPS5919252A (en) 1982-07-21 1982-07-21 Control method of semiconductor laser array output

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57127266A JPS5919252A (en) 1982-07-21 1982-07-21 Control method of semiconductor laser array output

Publications (1)

Publication Number Publication Date
JPS5919252A true JPS5919252A (en) 1984-01-31

Family

ID=14955762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57127266A Pending JPS5919252A (en) 1982-07-21 1982-07-21 Control method of semiconductor laser array output

Country Status (1)

Country Link
JP (1) JPS5919252A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165060A2 (en) * 1984-06-13 1985-12-18 Fuji Photo Film Co., Ltd. Semiconductor laser beam scanning device
JPS61243975A (en) * 1985-04-20 1986-10-30 Sony Corp Method and apparatus for optical recording
JPS63163872A (en) * 1986-12-26 1988-07-07 Toshiba Corp Image forming device
JPH0231343A (en) * 1988-07-20 1990-02-01 Sony Corp Laser light source
JPH02188277A (en) * 1989-01-18 1990-07-24 Fuji Xerox Co Ltd Integrated light density control of laser
JPH0388143A (en) * 1989-08-31 1991-04-12 Nec Corp Multibeam optical head device
JPH03120630A (en) * 1989-10-04 1991-05-22 Matsushita Electric Ind Co Ltd Optical disk device
US5432537A (en) * 1992-05-18 1995-07-11 Ricoh Company, Ltd. Optical recording apparatus capable of controlling optical power of laser diode array
EP0713214A3 (en) * 1994-11-17 1996-09-18 Matsushita Electric Ind Co Ltd A method and an apparatus for controlling the power of a multibeam semiconductor laser device
US5671077A (en) * 1992-05-18 1997-09-23 Ricoh Company, Ltd. Multi-beam light source device and optical scanning apparatus using the multi-beam source device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165060A2 (en) * 1984-06-13 1985-12-18 Fuji Photo Film Co., Ltd. Semiconductor laser beam scanning device
JPS61243975A (en) * 1985-04-20 1986-10-30 Sony Corp Method and apparatus for optical recording
JPS63163872A (en) * 1986-12-26 1988-07-07 Toshiba Corp Image forming device
JPH0712709B2 (en) * 1986-12-26 1995-02-15 株式会社東芝 Image forming device
JPH0231343A (en) * 1988-07-20 1990-02-01 Sony Corp Laser light source
JPH02188277A (en) * 1989-01-18 1990-07-24 Fuji Xerox Co Ltd Integrated light density control of laser
JPH0388143A (en) * 1989-08-31 1991-04-12 Nec Corp Multibeam optical head device
JPH03120630A (en) * 1989-10-04 1991-05-22 Matsushita Electric Ind Co Ltd Optical disk device
US5432537A (en) * 1992-05-18 1995-07-11 Ricoh Company, Ltd. Optical recording apparatus capable of controlling optical power of laser diode array
US5671077A (en) * 1992-05-18 1997-09-23 Ricoh Company, Ltd. Multi-beam light source device and optical scanning apparatus using the multi-beam source device
EP0713214A3 (en) * 1994-11-17 1996-09-18 Matsushita Electric Ind Co Ltd A method and an apparatus for controlling the power of a multibeam semiconductor laser device
US5671209A (en) * 1994-11-17 1997-09-23 Matsushita Electric Industrial Co., Ltd. Focusing time period and power control of a multilaser diode array

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