JPS59191039A - Projection exposure device - Google Patents
Projection exposure deviceInfo
- Publication number
- JPS59191039A JPS59191039A JP58065440A JP6544083A JPS59191039A JP S59191039 A JPS59191039 A JP S59191039A JP 58065440 A JP58065440 A JP 58065440A JP 6544083 A JP6544083 A JP 6544083A JP S59191039 A JPS59191039 A JP S59191039A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- quartz
- cover
- projection exposure
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は投影露光装置に関し、とりわけマスク側に付着
した異物の転写を防止した投影露光装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a projection exposure apparatus, and more particularly to a projection exposure apparatus that prevents transfer of foreign matter attached to a mask side.
半導体装置のホ） ＩＪングラフイ工程等に使用される
投影露光装置は、透明基板上に光不透過部材で形成した
マスクの該パターンを、表面にホトレジストを塗布１．
たウェー・・表面に投影結像させているが、このとぎマ
スクの表面に朋埃等の異物が付着しているとこの異物も
マスクツくターンと共にウェーハ表面に結像転写される
ことになり、ウェーハに形成されるパターンに欠陥が発
生し、半導体装置の製造歩留りが低下される。A projection exposure apparatus used in the IJ graphing process of semiconductor devices, etc., applies the pattern of a mask formed of a light-opaque material on a transparent substrate by coating the surface with photoresist.1.
The image is projected onto the wafer surface, but if there is foreign matter such as dust attached to the surface of the wafer, this foreign matter will also be imaged and transferred to the wafer surface as the mask turns. Defects occur in patterns formed on wafers, reducing the manufacturing yield of semiconductor devices.
このため、例えば特開昭５４−８００８２号公報に記載
された第１図のマスクのように、透明基板（ガラス）１
の表面にクロム等の不透明ｊ換２にてノくターンを形成
したマスク３０表面側をスペーサ４と透明薄膜５とから
なるカバー６にて覆う構成とし、これによりマスク３表
面への異物の付着す防止すると共に、カバー６表面に付
着する異物を投影光学系の焦点深度外に設定することに
よりその転写を防＋ｈＬ得るようにしたものが提案され
るに到っている。For this reason, for example, as in the mask shown in FIG. 1 described in JP-A-54-80082, a transparent substrate (glass)
The surface side of the mask 30, on which a turn is formed with an opaque material 2 made of chrome or the like, is covered with a cover 6 consisting of a spacer 4 and a transparent thin film 5, thereby preventing foreign matter from adhering to the surface of the mask 3. At the same time, proposals have been made to prevent foreign matter from being transferred to the surface of the cover 6 by setting it outside the depth of focus of the projection optical system.
しかしながら、この構成のものはカバー６による光路の
シフトの影響を避けるために透明薄膜５を０２〜６μｍ
と極めて薄いものとしており、したがってその加工技術
上の点から透明薄膜５の材料にはニトロセルロース等の
ポリマを使用している。このため、この種の光透過特性
の一つである深紫外光透過率が低い特性によって、深紫
外光によるマスクパターンの転写効果が低くなり、ホト
レジストの感度が実質的に低下されろ。この点、透明薄
膜５を石英で構成すれば深紫外光の透過率が高いことか
ら有効となるが、前述した薄さに加］ニするのは困難で
ある。However, in this configuration, the thickness of the transparent thin film 5 is 02 to 6 μm in order to avoid the influence of the optical path shift caused by the cover 6.
Therefore, from the viewpoint of processing technology, a polymer such as nitrocellulose is used as the material for the transparent thin film 5. Therefore, due to the low deep ultraviolet light transmittance, which is one of such light transmission characteristics, the transfer effect of the mask pattern by deep ultraviolet light is reduced, and the sensitivity of the photoresist is substantially reduced. In this regard, if the transparent thin film 5 is made of quartz, it will be effective since it has a high transmittance for deep ultraviolet light, but it is difficult to achieve this in addition to the above-mentioned thinness.
本発明の目的はカバーの深紫外光透過率を向上する一方
で、加工を容易にしかつ光路のシフトやその他の光学的
な悪影響を防止しながら異物の転写防止を図り、これに
より半導体装置の製造歩留の向上を達成することができ
る投影露光装置な提供することにある。The purpose of the present invention is to improve the deep ultraviolet light transmittance of the cover, facilitate processing, prevent shifts in the optical path and other optical adverse effects, and prevent transfer of foreign matter, thereby improving the manufacturing of semiconductor devices. An object of the present invention is to provide a projection exposure apparatus that can improve yield.
また、本発明の前記ならびにそのほかの目的と新規な特
徴は、本明細書の記述および添付図面からあきらかにな
るであろう。Further, the above-mentioned and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、投影露光体としてのマスク上に石英のカバー
を設けてマスク表面に直接異物が付着しないよ’）ｖｃ
構成する一方、被投影露光体としてのウェーハ表面の上
方位置に前記カバーと同一厚さの石英板を配置すること
により、石英カッく−によってマスクへの異物の付着を
防止すると共に、石英カバーによって生じる光路ロスや
色収差を石英板にて補正し、これにより半導体装置の製
造歩留りの向上を達成するものである。In other words, a quartz cover is provided over the mask as a projection exposure body to prevent foreign matter from directly adhering to the mask surface.
On the other hand, by arranging a quartz plate having the same thickness as the cover above the surface of the wafer as the projection exposure object, the quartz cutter prevents foreign matter from adhering to the mask, and the quartz cover prevents foreign matter from adhering to the mask. The optical path loss and chromatic aberration that occur are corrected using a quartz plate, thereby improving the manufacturing yield of semiconductor devices.
第２図は本発明の一実施例であり、汐かげ君等カラなる
定盤７はエアクツ／ロン８を有する脚部９により基台１
０上に水平に支持されている。この定盤７上にはスキャ
ンテーブル１１をエアベアリング１２にて支持し、スキ
ャンテーブル１１を水平方向に摺動可能に支持している
。このスキャンテーブル１１の一端部（図の右側）の開
口１１ａ上にはマスクホルダ１３を設け、所定のパター
ンに形成した投影露光体としてのマスク１４を保持して
いる。また、他端部には詳細を後述するウェーハ保持部
１５を設け、被投影露光体としてのウェーハ１６を保持
している。FIG. 2 shows an embodiment of the present invention, in which a base plate 7 is connected to a base 1 by means of legs 9 having air actuators/rons 8.
It is supported horizontally on 0. A scan table 11 is supported on the surface plate 7 by an air bearing 12, and the scan table 11 is supported so as to be slidable in the horizontal direction. A mask holder 13 is provided above the opening 11a at one end (right side in the figure) of the scan table 11, and holds a mask 14 as a projection exposure body formed in a predetermined pattern. Further, a wafer holding section 15, the details of which will be described later, is provided at the other end, and holds a wafer 16 as a projection exposure object.
一方、前記定盤７の一端部下側には透孔］７に臨んで光
源ボックス１８を取着すると共に、このボックス１８内
には水銀ランプ等の深紫外光を発するランプ１９．コン
デンサレンズ２０．スリット２１等を設け、前記透孔１
７の上方へ光が射出されるようになっている。また、前
記定盤７の一端部から略中央部にかげての上側には光学
ヘッド２２を配置し、その内部に配設した複数個の平面
鏡２３，２４，２５、凹面鏡２６、凸面鏡２７からなる
結像光学系２８によって前記透孔１７から入射されてき
た光を定盤７の略中央部に照射するようになっている。On the other hand, a light source box 18 is attached to the lower side of one end of the surface plate 7 facing the transparent hole 7, and a lamp 19 such as a mercury lamp that emits deep ultraviolet light is installed inside the box 18. Condenser lens 20. A slit 21 etc. is provided, and the through hole 1
Light is emitted upwards from 7. Further, an optical head 22 is disposed on the upper side extending from one end of the surface plate 7 to approximately the center thereof, and consists of a plurality of plane mirrors 23, 24, 25, a concave mirror 26, and a convex mirror 27 disposed inside the optical head 22. The imaging optical system 28 is configured to irradiate the light incident through the through hole 17 onto a substantially central portion of the surface plate 7.
したがって、この光学系２８により、スキャンテーブル
１１が図示のように定盤７の一端側に移動されたときに
は、前記ランプ１９からの光はマスク１４を通った後に
ウエーノ・保持部１５に保持されたウェー／・１６の表
面に照射され、ここにマスクパターンが結像される。Therefore, with this optical system 28, when the scan table 11 is moved to one end side of the surface plate 7 as shown, the light from the lamp 19 passes through the mask 14 and is held by the wafer holding part 15. The mask pattern is imaged onto the surface of the waveguide 16.
前記マスク１４は、第３図に示すように、石英ガラス等
の基板２９の表面にクロム等の光不透過膜３０を所定の
パターンに形成しており、更にその表面側にはカバー３
１を取着している。このカバー３１はマスク１４周縁に
固着した枠状のスペーサ３２と、このスペーサ３２に支
持さセた石英板３３とで構成し、このカバー３１でマス
ク１４表面を気密に葎っている。石英板３３は必袂な強
度を確保しかつ加工が可能な範囲内で薄く形成しており
、大略故１０μｍ〜数ｔｉｎの厚さとなっている。また
、スペーサ３２の寸法により石英板３３と７７２１４表
面との間隔感、を約数期〜数１００關に設定している。As shown in FIG. 3, the mask 14 has a light-opaque film 30 made of chromium or the like formed in a predetermined pattern on the surface of a substrate 29 made of quartz glass or the like, and a cover 3 on the surface side.
1 is attached. This cover 31 is composed of a frame-shaped spacer 32 fixed to the periphery of the mask 14 and a quartz plate 33 supported by this spacer 32, and the cover 31 covers the surface of the mask 14 in an airtight manner. The quartz plate 33 is formed to be as thin as possible while ensuring the necessary strength, and has a thickness of approximately 10 μm to several tin. Furthermore, the distance between the quartz plate 33 and the surface of 77214 is set to about several orders of magnitude to several hundreds of orders of magnitude depending on the dimensions of the spacer 32.
一方、前記ウェーハ保持部１５は、第４図に示すように
、表面にホトレジスト３４を塗布したウェーハ１６を保
持するホルダ３５を有すると共に。On the other hand, the wafer holding section 15 has a holder 35 that holds a wafer 16 whose surface is coated with a photoresist 34, as shown in FIG.
その周囲に柱状のスペーサ３６を立設し、これらスペー
サ３６の上端に石英板３７を略水平に支架している。こ
の石英板３７は前記カバー３１における石英板３３と同
一厚さに形成し、かつウェーハ１６表面との間隔１２も
カバーにおけると同一の寸法としている。Column-shaped spacers 36 are erected around the spacers 36, and a quartz plate 37 is supported substantially horizontally on the upper ends of these spacers 36. This quartz plate 37 is formed to have the same thickness as the quartz plate 33 in the cover 31, and the distance 12 from the surface of the wafer 16 is also the same as that in the cover.
以上の構成によれば、スキンテーブル１１を例えば図の
実線位置に設定しておけば、ランプ１９ノ光（深紫外光
）はコンデンサレンズ２・０とスリット２１によりスリ
ット光としてマスク１４に射出され、これを透過したも
のが光学ヘッド２２に入射される。光学ヘッド２２では
各鏡２３．２４゜２６．２７，２５で反射され、凹面鏡
２６．凸面鏡２７による結像作用によってウェーハ保持
部１５０ウェーハ１６表面に結像される。そして、この
状態でスキャンテーブル１１を図示の左方へ移動すれば
、スリット光はマスク１４を走食し、かつウェーハ１６
上に走査像が露光される。According to the above configuration, if the skin table 11 is set, for example, at the solid line position in the figure, the light from the lamp 19 (deep ultraviolet light) is emitted to the mask 14 as slit light by the condenser lens 2.0 and the slit 21. , the light that passes through this is incident on the optical head 22. In the optical head 22, it is reflected by each mirror 23, 24, 26, 27, 25, and concave mirror 26. An image is formed on the surface of the wafer holder 150 and the wafer 16 by the imaging effect of the convex mirror 27 . If the scan table 11 is moved to the left in this state, the slit light will eat through the mask 14 and the wafer 16.
A scanned image is exposed thereon.
このとき、マスク１４の表面はカバー３１にて覆われて
いるので、マスク表面に直接異物が付着することはない
。また、異物がカバー３１、即ち石英板３３上に付着し
ていてもマスク表面とは間隔形、だげ光軸方向に離れて
いるため焦点深度内には入らず、結像位置ではボケ像と
なってパターン転写の障害にはならない。また、光がカ
バー３１、即ち石英板３３を透過する際に光波長の屈折
率の相違によって色収差が生じるが、この光は全く逆の
状態でウェーハ保持部１５の石英板３７を透過してウェ
ーハ１６表面に当射されるので、この石英板１６により
色収差は解消される。同様にして、カバー３１の石英板
３３によって生じた光路ロスもウェーハ１６直上の石英
板３７によって補正される。これにより、各石英板３３
，３７の厚さを極めて小さいものにしなくとも不具合が
生じることはない。なお、各石英板３３．３７は深紫外
光の透過率が亮いため、ホトレジスト３４の感光性の点
で有利となることは言うまでもない。At this time, since the surface of the mask 14 is covered with the cover 31, foreign matter does not directly adhere to the mask surface. Furthermore, even if foreign matter adheres to the cover 31, that is, the quartz plate 33, it will not enter the depth of focus because it is spaced apart from the mask surface and is slightly distant in the optical axis direction, resulting in a blurred image at the imaging position. This will not interfere with pattern transfer. Further, when light passes through the cover 31, that is, the quartz plate 33, chromatic aberration occurs due to the difference in the refractive index of the light wavelength, but this light passes through the quartz plate 37 of the wafer holder 15 in a completely opposite state and is transferred to the wafer. Since the light is applied to the surface of the quartz plate 16, chromatic aberration is eliminated by the quartz plate 16. Similarly, the optical path loss caused by the quartz plate 33 of the cover 31 is also corrected by the quartz plate 37 directly above the wafer 16. As a result, each quartz plate 33
, 37 does not have to be made extremely small to cause any problem. It goes without saying that each of the quartz plates 33 and 37 has a high transmittance for deep ultraviolet light, which is advantageous in terms of the photosensitivity of the photoresist 34.
（１） マスク１４０表面を石英板３３のカバー３１
で覆っているので、異物がマスク表面に付着することは
なく、付着するのはカバー３１の表面で所定の間隔がお
かれているので、焦点深度によって異物像がウェーハ１
６ｆｉ面に露光されることはなく、パターン欠陥の発生
を防止して製造歩留な向上できる。(1) Cover 31 of quartz plate 33 on the surface of mask 140
Because the mask surface is covered with
Since the 6fi surface is not exposed to light, pattern defects can be prevented and manufacturing yield can be improved.
（２）マスク１４０カバー３１と、ウェーハ１６の上方
位置に夫々石英板３３．３７を配設しているので、色収
差や光路ロスな補正解消でき、シャープな像をウェーハ
１６表面に結像できる。(2) Since quartz plates 33 and 37 are disposed above the mask 140 cover 31 and the wafer 16, correction for chromatic aberration and optical path loss can be eliminated, and a sharp image can be formed on the wafer 16 surface.
（３１夫々の石英板３３．３７により色収差と光路ロス
を解消できるので石英板３３．３７を極端に薄くする必
要はなく、加工を容易にすると共に強度の向上を図り得
る。(Since chromatic aberration and optical path loss can be eliminated by the quartz plates 33 and 37 of 31, there is no need to make the quartz plates 33 and 37 extremely thin, making processing easier and improving strength.
（４）石英板３３，３７は深紫外光の透過率が高いので
、ホトレジストの感光効率を高め、露光時間の短縮化や
ランプ１９光度の低下な可能にする。(4) Since the quartz plates 33 and 37 have high transmittance for deep ultraviolet light, they increase the photoresist's photosensitive efficiency, making it possible to shorten the exposure time and reduce the luminous intensity of the lamp 19.
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。たとえば、結像用光学
系は既存のあらゆる構成のものが適用できる。また、ウ
エーノ・保持部の石英板をウエーノ・と一体化させる構
成としてもよい。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, any existing configuration of the imaging optical system can be applied. Alternatively, the quartz plate of the Ueno holding section may be integrated with the Ueno.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体装置の製造用
としての投影露光技術に適用した場合について説明した
が、それに限定されるものではなく、たとえばレチクル
からマスクを作る技術等写真蝕刻技術全般に適用できる
。The above explanation has mainly been about the application of the invention made by the present inventor to projection exposure technology for manufacturing semiconductor devices, which is the background field of application, but the invention is not limited to this, for example. It can be applied to all photo-etching techniques, such as techniques for making masks from reticles.
第１図は従来のマスクの断面図、
第２図は本発明装置の全体構成図、
第３図はマスクの拡大図、
第４図はウェーハ保持部の拡大図である。
７・・・定盤、１１・・・スキャンテーブル、１４・・
・マスフ（投影露光体）、１５・・・ウェーハ保持部、
１６・・・ウェーハ（被投影露光体）、１９・・・ラン
プ、２２・光学ヘッド、２３〜２５・・・平面鏡、２６
・・・凹面鏡、２７・・・凸面鏡、２９・・・ガラス基
板、３０・・・クロム膜（パターン）、３１・・カバー
、３２・・・スペーサ、３３・・・石英板、３６・・ス
ペーサ、３７・・・石英板。
代理人 弁理士 高 橋 明 夫（、：）１．’：、
ｊ：：：’ｌ：：・〜−７ノ
第 １ 図
／
第 ２ 図
第 ３ 図FIG. 1 is a sectional view of a conventional mask, FIG. 2 is an overall configuration diagram of the apparatus of the present invention, FIG. 3 is an enlarged view of the mask, and FIG. 4 is an enlarged view of a wafer holding section. 7...Surface plate, 11...Scan table, 14...
・Masuf (projection exposure body), 15... wafer holding part,
16... Wafer (projection exposure object), 19... Lamp, 22. Optical head, 23-25... Plane mirror, 26
... Concave mirror, 27 ... Convex mirror, 29 ... Glass substrate, 30 ... Chrome film (pattern), 31 ... Cover, 32 ... Spacer, 33 ... Quartz plate, 36 ... Spacer , 37...quartz plate. Agent Patent Attorney Akio Takahashi (, :) 1. ':,
j:::'l::・～-7 No. 1/Fig. 2 Fig. 3
Claims (1)
サとからなるカバーにて気密に覆う一方、被投影露光体
としてのウエーノ・の表面上に前記石英板と同一厚さの
石英板を前記スペーサと同一の間隔位置に設置し、前記
投影露光体のパターンを光学系により前記各石英板を透
過させて前記被投影露光体上に結像させるよう構成した
ことを特徴とする投影露光装置。 ２、光学系は反射鏡のみからなる結像光学系として構成
してなる特許請求の範囲第１項記載の投影露光装置。 ３、光源に水銀又はキセノン等のランプを使用して深紫
外光を発生し得るように構成してなる特許請求の範囲第
１項又は第２項記載の投影露光装置。[Scope of Claims] 1. While the surface of the mask as a projection exposure body is hermetically covered with a cover made of a quartz plate and a spacer, a cover of the same thickness as the quartz plate is placed on the surface of the mask as a projection exposure body. quartz plates are installed at the same spacing position as the spacer, and the pattern of the projection exposure body is transmitted through each of the quartz plates by an optical system to be imaged on the projection exposure body. Projection exposure equipment. 2. The projection exposure apparatus according to claim 1, wherein the optical system is configured as an imaging optical system consisting of only a reflecting mirror. 3. A projection exposure apparatus according to claim 1 or 2, which is configured to generate deep ultraviolet light by using a mercury or xenon lamp as a light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58065440A JPS59191039A (en) | 1983-04-15 | 1983-04-15 | Projection exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58065440A JPS59191039A (en) | 1983-04-15 | 1983-04-15 | Projection exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59191039A true JPS59191039A (en) | 1984-10-30 |
Family
ID=13287189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58065440A Pending JPS59191039A (en) | 1983-04-15 | 1983-04-15 | Projection exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59191039A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002059694A1 (en) * | 2001-01-26 | 2002-08-01 | Advanced Micro Devices, Inc. | A pellicle for use in small wavelength lithography and a method for making such a pellicule |
| US6593035B1 (en) | 2001-01-26 | 2003-07-15 | Advanced Micro Devices, Inc. | Pellicle for use in small wavelength lithography and a method for making such a pellicle using polymer films |
| US7110195B2 (en) | 2004-04-28 | 2006-09-19 | International Business Machines Corporation | Monolithic hard pellicle |
-
1983
- 1983-04-15 JP JP58065440A patent/JPS59191039A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002059694A1 (en) * | 2001-01-26 | 2002-08-01 | Advanced Micro Devices, Inc. | A pellicle for use in small wavelength lithography and a method for making such a pellicule |
| US6544693B2 (en) | 2001-01-26 | 2003-04-08 | Advanced Micro Devices, Inc. | Pellicle for use in small wavelength lithography and a method for making such a pellicle |
| US6593035B1 (en) | 2001-01-26 | 2003-07-15 | Advanced Micro Devices, Inc. | Pellicle for use in small wavelength lithography and a method for making such a pellicle using polymer films |
| US7110195B2 (en) | 2004-04-28 | 2006-09-19 | International Business Machines Corporation | Monolithic hard pellicle |
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