JPS59188965A - Original reading element - Google Patents
Original reading elementInfo
- Publication number
- JPS59188965A JPS59188965A JP58063364A JP6336483A JPS59188965A JP S59188965 A JPS59188965 A JP S59188965A JP 58063364 A JP58063364 A JP 58063364A JP 6336483 A JP6336483 A JP 6336483A JP S59188965 A JPS59188965 A JP S59188965A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- microcrystalline
- amorphous
- amorphous silicon
- adopting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 30
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract description 23
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 230000003595 spectral effect Effects 0.000 abstract description 14
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 230000031700 light absorption Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Abstract
Description
【発明の詳細な説明】
この発明は光導電体−に非晶質シリコン（アセコンＩＣ
センサが用いられているが、該シリコンＩＣセンサはセ
ンサ長が２０ａｍ乃至３０ｍ＋と短いことから光路長の
長い縮小光学系を必要とし、装置の小型化を図る上で問
題になっていた。DETAILED DESCRIPTION OF THE INVENTION This invention uses amorphous silicon (Acecon IC) as a photoconductor.
However, since the silicon IC sensor has a short sensor length of 20 am to 30 m+, it requires a reduction optical system with a long optical path length, which has been a problem in miniaturizing the device.
そこで最近は、縮小光学系を必要としない、すなわち原
稿幅と同じ長さを有する長尺の薄膜センサの開発が試み
られている。その代表的な構成全第１図に示す。すなわ
ち同センナは光導電体１に非晶質シリコン（ａ−８ｔ：
Ｈ）を用い、これを酸化インジウムスズ（Ｉｎｄｉｕｍ
−Ｔｉｎ ０ｘｉｄｅ ：略称ＩＴＯ）等の透明電極２
と画素数に対応した数に分割形成した金属電極３とでは
さんだサンドイッチ型の構成をとっている。なお、４は
ガラス、セラミック等の基板である。Therefore, recently, attempts have been made to develop a long thin film sensor that does not require a reduction optical system, that is, has the same length as the original width. Its typical configuration is shown in FIG. That is, the same senna uses amorphous silicon (a-8t:
H) and indium tin oxide (Indium tin oxide).
- Transparent electrode 2 such as Tin Oxide (abbreviated as ITO)
It has a sandwich type structure sandwiched between the metal electrode 3 and the metal electrode 3 which is divided into a number corresponding to the number of pixels. Note that 4 is a substrate made of glass, ceramic, or the like.
第２図に上記従来のセンサの分光感度特性を示す。なお
、第２図において横軸は入射光の波長であり、縦軸は正
規化した分光感度である。同図によれば該センサの分光
感度は波長０．６５μｍ付近が最も良く、その長波長側
および短波長側においては分光感度が悪くなっているこ
とがわかる。このうち長波長側での該分光感度の急激な
低下は非晶質シリコン層１における光吸収係数の減少に
よるものでアシ、短波長側での分光感度の低下は本−子
の受光面への入射フォトン数の減少、透明電極膜２間で
の干渉効果による非晶質シリコン層への入射フォトン数
の減少等による。しかし、特に短波長側での低下は上記
以外に透明電極２と非晶質シリコン層１との界面に存在
するトラップ準位の影響によるものも太きいと考えられ
る。なぜならば、非晶質シリコ／１の光吸収係数は結晶
シリコンと比べて上記短波長域において約１ケタ大きく
（後述の第４図参照）、光吸収は該非晶質シリコン層１
の透明電極２近傍でなされるために、そこで発生した電
子−正孔対は上記トラップ準位に大きく左右されるから
である。FIG. 2 shows the spectral sensitivity characteristics of the above conventional sensor. In FIG. 2, the horizontal axis is the wavelength of incident light, and the vertical axis is the normalized spectral sensitivity. According to the figure, it can be seen that the spectral sensitivity of the sensor is best near a wavelength of 0.65 μm, and the spectral sensitivity is poor on the longer and shorter wavelength sides. Among these, the rapid decrease in spectral sensitivity on the long wavelength side is due to a decrease in the light absorption coefficient in the amorphous silicon layer 1, and the decrease in spectral sensitivity on the short wavelength side is due to the decrease in the light absorption coefficient of the amorphous silicon layer 1. This is due to a decrease in the number of incident photons, a decrease in the number of incident photons to the amorphous silicon layer due to the interference effect between the transparent electrode films 2, etc. However, it is considered that the decrease particularly on the short wavelength side is caused not only by the above but also by the effect of trap levels existing at the interface between the transparent electrode 2 and the amorphous silicon layer 1. This is because the light absorption coefficient of amorphous silicon/1 is approximately one order of magnitude larger than that of crystalline silicon in the short wavelength range (see Figure 4 below), and the light absorption coefficient of the amorphous silicon layer 1
This is because the electron-hole pairs generated there are largely influenced by the trap level because the electron-hole pairs are generated near the transparent electrode 2.
この発明は上記実情に鑑みてなされたものであシ、原稿
読取素子の分光感度特性を向上させることによシ、高精
度かつ高能率の原稿読取シを実現する原稿読取素子を提
供することを目的とする。The present invention has been made in view of the above circumstances, and aims to provide a document reading element that realizes highly accurate and highly efficient document reading by improving the spectral sensitivity characteristics of the document reading element. purpose.
すなわちこの発明は、光吸収係数が波長０．６５μｍＪ
：υ低波長域で非晶質シリコンよシ小さく、波長０．６
５μｍよシ長波長域で該非晶質シリコンよシ大きい微結
晶シリコン（ｍ１ｃｒｏ ｃｒｙｓｔａｌ ５ｉｌｉｃ
ｏｎ；μｅ−８１）を前記非晶質シリコンとともに光導
電体として用いるようにしたものでアシ、さらに詳しく
は基板上に所定画素数に対応するように分割形成した金
属電極の上から光導電体として上記非晶質シリコンを着
膜した後、この上面にさらに光導電体として上記微結晶
シリコンを例えば１００Ｘ〜１００ＯＸの厚さに着膜し
、さらにこの上層にＩＴＯ等の透明電極を着膜形成する
ようにしたものである。このような構成とすることによ
り、上記低波長域における透明電極と非晶質シリコンと
の界面のトラップ効果の影響を緩和することができ、さ
らに上記長波長域における光吸収効率を向上させること
ができる。なお、上記微結晶シリコン層は透明電極同様
、干渉フィルタの役割も兼ねている。That is, in this invention, the light absorption coefficient is 0.65 μmJ.
:υ Smaller than amorphous silicon in the low wavelength range, wavelength 0.6
Microcrystalline silicon (m1cro crystal 5ilic), which is larger than the amorphous silicon in the long wavelength range of 5 μm
μe-81) is used as a photoconductor together with the amorphous silicon. After depositing the above-mentioned amorphous silicon as a film, the above-mentioned microcrystalline silicon is further deposited as a photoconductor on the upper surface to a thickness of, for example, 100X to 100OX, and a transparent electrode such as ITO is further deposited on this upper layer. It was designed to do so. By adopting such a configuration, it is possible to alleviate the influence of the trap effect at the interface between the transparent electrode and the amorphous silicon in the above-mentioned low wavelength range, and further improve the light absorption efficiency in the above-mentioned long wavelength range. can. Note that, like the transparent electrode, the microcrystalline silicon layer also serves as an interference filter.
以下、この発明にかかる原稿読取素子を添付図面に示す
実施例にしたがって詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A document reading element according to the present invention will be described in detail below with reference to embodiments shown in the accompanying drawings.
第３図にこの発明にかかる原稿読取素子の一実施例構成
を示す。なお、第１図に示した従来素子と同一構成要素
については同一符号を付して示しておシ、重複する説明
は省略する。FIG. 3 shows the configuration of an embodiment of the document reading element according to the present invention. Components that are the same as those of the conventional device shown in FIG. 1 are designated by the same reference numerals, and redundant explanations will be omitted.
すなわち本実施例では光導電体としての非晶質シリコ／
層１と透明電極層２との間にさらに第２の光導電体とし
て所定厚さの微結晶シリコン５（μＣ−５ｉ）１介在形
成した構成としている。微結晶シリコン５は平均結晶粒
径が１００Ｘ以下の微結晶相とアモルファス相とが混合
されたものである。In other words, in this example, amorphous silicon/
A microcrystalline silicon 5 (μC-5i) 1 with a predetermined thickness is further formed as a second photoconductor between the layer 1 and the transparent electrode layer 2. The microcrystalline silicon 5 is a mixture of a microcrystalline phase with an average crystal grain size of 100X or less and an amorphous phase.
第４図は入射光の波長と吸収係数との関係を非晶質シリ
コン（ａ −８１）、微結晶シリコン（μＣ−８１）、
結晶シリコン（結晶８１ ）についてそれぞれ示すもの
である。なお、第４図において実線が非晶質シリコンで
ア）、破線が微結晶シリコンであシ、一点鎖線が結晶シ
リコンであるＱ
第４図に示すように、微結晶シリコンの吸収係数αは波
長λ（０，６５μｍの短波長領域では非晶質シリコンの
吸収係数よシ小さく、波長λ）０．６５μｍの長波長領
域では非晶質シリコンの吸収係数より大きい。Figure 4 shows the relationship between the wavelength of incident light and the absorption coefficient for amorphous silicon (a-81), microcrystalline silicon (μC-81),
Each figure is shown for crystalline silicon (crystal 81). In Figure 4, the solid line is amorphous silicon, the broken line is microcrystalline silicon, and the dashed line is crystalline silicon.Q As shown in Figure 4, the absorption coefficient α of microcrystalline silicon is In the short wavelength region of λ (0.65 μm), the absorption coefficient is smaller than that of amorphous silicon, and in the long wavelength region of 0.65 μm (λ), it is larger than the absorption coefficient of amorphous silicon.
したがって第３図に示した本発明の構造をとることによ
ｐ１上記短波長光の吸収領域は非品質シリコン層１内の
ＩＴＯ透明電極２近傍から非晶質シリコン層１の中心部
方向へ広が９、該吸収領域での吸収によ多発生する電、
子−正孔対は前述した透明電極２と非晶質シリコン層ｌ
＋の界面に存在するトラップ準位の影響を受けにくくな
る。また一方、波長が０．７μｍ以上の長波長光に対し
ては第４図に示したように微結晶シリコンの吸収係数は
非晶質シリコンのそれよシも大きいため、本発明の構造
をとることにより長波長光の光吸収効率は向上する。し
かも、可視の波長領域である０、４μｍ〜０．７μｍの
領域で、微結晶シリコンの屈折率ｎは非晶質シリコンの
それよ）小さく、本発明によるＩＴＯ膜２、微結晶シリ
コン５、非晶質シリコンの屈折率ｎの間には
ｎ （ＩＴＯ））ｎ （μｃ −８：１ ））ｎ （ａ
−８ｉ：Ｈ）の関係が成り立って。いるため、微結晶シ
リコン層５は上記ＩＴＯ膜２とともに光反射に対する防
止膜の働きをしている。Therefore, by adopting the structure of the present invention shown in FIG. 9, the electric charge generated due to absorption in the absorption region,
The electron-hole pairs are formed by the transparent electrode 2 and the amorphous silicon layer l described above.
It becomes less susceptible to the influence of trap levels existing at the + interface. On the other hand, for long-wavelength light with a wavelength of 0.7 μm or more, the absorption coefficient of microcrystalline silicon is larger than that of amorphous silicon, as shown in FIG. 4, so the structure of the present invention is adopted. This improves the light absorption efficiency of long wavelength light. Moreover, in the visible wavelength region of 0.4 μm to 0.7 μm, the refractive index n of microcrystalline silicon is smaller than that of amorphous silicon, and the ITO film 2 according to the present invention, microcrystalline silicon 5, The refractive index n of crystalline silicon is n (ITO))n (μc -8:1))n (a
-8i:H) holds true. Therefore, the microcrystalline silicon layer 5, together with the ITO film 2, functions as a film for preventing light reflection.
し、たがって、本発明の構造すなわち非晶質シリコン層
と透明電極層との間に微結晶シリコン層を介在させる構
造をとることによシ、上記短波長域および長波長域にお
いても分光感度特性の向上を十分に期待することができ
る。Therefore, by adopting the structure of the present invention, that is, a structure in which a microcrystalline silicon layer is interposed between an amorphous silicon layer and a transparent electrode layer, the spectral sensitivity can be improved even in the short wavelength range and long wavelength range. It can be fully expected that the characteristics will be improved.
次に第３図に示したこの発明にかかる原稿読取素子の７
１造方法を説明する。Next, 7 of the document reading element according to the present invention shown in FIG.
The method for making one will be explained.
まずはじめに、ガラス等の絶縁基板才を上にクロム（Ｃ
ｒ）を３０００Ｘ程電子ビ一ム蒸着し、この後例えばフ
ォトリングラフィおよびエツチングによｐ ｔ＋ターン
形成を施すことによって所定画素数に対応した数に分割
した金属電極３を形成する。First, place an insulating substrate such as glass on top of chromium (C).
The metal electrode 3 is divided into a number corresponding to a predetermined number of pixels by electron beam vapor deposition of about 3000X and then forming a pt+ turn by, for example, photolithography and etching.
次いでその上に光導電体１として非晶質シリコンをプラ
ズマＣＶＤ法によシ約１μｍ着膜する。なおこの着膜に
際しては、１００％シランガス（５ｉｎ４）を用いるも
のとし、Ｓ ｉＨ４流量１０〜５０８ＣＣＭ（標準ｃｃ
分）、ＲＦ（高周波： １３．５６ ＭＨｚ ）パワー
５〜５０Ｗ、圧力０．１〜０．５ Ｔｏｒｒ 、基板温
度２５０℃の条件で行なうのが好ましい。次に、真空状
態を保ったまま水素（Ｈ２）ガスを混入し、シランガス
および水素ガス（ＳｉＨ４＋ Ｈ２）を用いたプラズマ
ＣＶＤ法によシ、上記形成した非晶質シリコン層１の上
に微結晶シリコン５を約１００Ｘ〜１０００１着膜する
。なおこの着膜に際しては、１〜１０チのシランガス（
Ｓｉｎ４）濃度にするとともに、ガス流量１０〜１００
ＳＣＣＭＸＲＦ （高周波：１３．５６ＭＨｚ ）
Ａ’クワ−０〜２００Ｗ１圧力帆１〜０．５ Ｔｏｒｒ
、基板温度２５０〜３００℃の条件で行なうのが好まし
い。そして最後に、透明電極２をＤＣ（直流）スパッタ
リング法によシ５００〜２０００１着膜する。なおこの
際のターゲットには前記ＩＴＯを用いるものとする。Next, amorphous silicon is deposited thereon to a thickness of about 1 μm as a photoconductor 1 by plasma CVD. For this film deposition, 100% silane gas (5 in 4) is used, and the SiH4 flow rate is 10 to 508 CCM (standard cc
It is preferable to carry out the process under the conditions of RF (high frequency: 13.56 MHz) power of 5 to 50 W, pressure of 0.1 to 0.5 Torr, and substrate temperature of 250°C. Next, hydrogen (H2) gas is mixed while maintaining the vacuum state, and microcrystals are formed on the amorphous silicon layer 1 formed above by a plasma CVD method using silane gas and hydrogen gas (SiH4 + H2). A film of approximately 100× to 1000× silicon 5 is deposited. In addition, when depositing this film, 1 to 10 inches of silane gas (
Sin4) concentration and gas flow rate of 10 to 100
SCCMXRF (High frequency: 13.56MHz)
A' Hoe - 0~200W1 Pressure sail 1~0.5 Torr
It is preferable to carry out the process at a substrate temperature of 250 to 300°C. Finally, a transparent electrode 2 of 500 to 20,001 layers is deposited by DC (direct current) sputtering. Note that the above-mentioned ITO is used as the target at this time.
ただし、上記微結晶シリコン５の膜厚は、透明電極２の
膜厚との相関関係による光反射防止効果および非晶質シ
リコン１の膜厚との相関関係による光吸収効率を考慮し
て、着目する波長の光の分光感度が最大になるよう、最
適化したほうが望ましい結果が得られることは勿論であ
る。However, the film thickness of the microcrystalline silicon 5 is determined by considering the light reflection prevention effect due to the correlation with the film thickness of the transparent electrode 2 and the light absorption efficiency due to the correlation with the film thickness of the amorphous silicon 1. It goes without saying that more desirable results can be obtained by optimizing the spectral sensitivity of light at the desired wavelength to its maximum.
さて、このようにして製造した原稿読取素子について、
■ＴＯ透明電極２に一５ｖのバイアス電圧を印加して分
光感度を測定してみたところ、波長０．５μｍの短波長
域において約４０％、そして波長０．６５μｍの長波長
域において約２０％分光感度が向上した。Now, regarding the manuscript reading element manufactured in this way,
■When we applied a bias voltage of -5V to the TO transparent electrode 2 and measured the spectral sensitivity, it was approximately 40% in the short wavelength region of 0.5 μm, and approximately 20% in the long wavelength region of 0.65 μm. Spectral sensitivity has been improved.
なお、上述した製造方法においては、５ＩＨ４＋Ｈ２ガ
スを用いたプラズマＣＶＤ法によって微結晶シリコン５
を形成するようにしたが、例えば５ＩＨ４＋Ｈ２あるい
は５ｉｎ４ガスの雰囲気中でのグロー放電分解法により
、あるいは不活性ガス（Ｈｅ 、 Ａｒ 、 Ｋｒ。In addition, in the above-mentioned manufacturing method, microcrystalline silicon 5
However, for example, by glow discharge decomposition method in an atmosphere of 5IH4+H2 or 5in4 gas, or by an inert gas (He, Ar, Kr, etc.).
Ｘｓ等）十Ｈ２の雰囲気中でシリコンをスパッタリング
すること等によって上記微結晶シリコン５を形成しても
よいことは勿論である。Of course, the microcrystalline silicon 5 may be formed by sputtering silicon in an atmosphere of 10H2 (Xs, etc.).
また、本実施例においてはノンドープのｌ形の微結晶シ
リコンを用いたが、？ロン（Ｂ）、あるいはリン（Ｐ）
等をドーグしたｐ形あるいはｎ形の微結晶シリコンを用
いてもよいことは勿論である。他の構成要素の材料につ
いても同様であシ、高感度の分光度を得ることができる
ものであれば他のいかなる材料を用いてもよい。Also, in this example, non-doped l-type microcrystalline silicon was used, but? Ron (B) or Lin (P)
It is of course possible to use p-type or n-type microcrystalline silicon prepared by doping. The same applies to the materials of the other components, and any other material may be used as long as it can provide a highly sensitive spectroscopic intensity.
以上説明したようにこの発明にかかる原稿読取素子によ
れば、分光感度特性を大幅に上昇させることができるこ
とから、高精度かつ高能率の原稿読取ｐを行なうことが
できる。As described above, according to the document reading element according to the present invention, the spectral sensitivity characteristics can be significantly improved, so that highly accurate and highly efficient document reading p can be performed.
第１図は従来の原稿読取素子の構成例を示す図、第２図
は第１図に示した従来の原稿読取素子の分光感度特性゛
を示す線図、第３図はこの発明にかかる原稿読取素子の
一実施例構成を示す図、第４図は非晶質シリコン、微結
晶シリコン等における光吸収係数と波長との関係を示す
線図でおる。
１・・・光導電体である非晶質シリコン、２・・・ＩＴ
Ｏ等の透明電極、３・・・金属電極、４・・・基板、５
・・・光導電体である微結晶シリコン。
第１図
第２図
逅 株 （μｍ）
第３図
第４図
１．４ １６ １．８ ２０ ２２
フオトンエフノンへ−（ｅＶ）FIG. 1 is a diagram showing an example of the configuration of a conventional document reading element, FIG. 2 is a diagram showing the spectral sensitivity characteristics of the conventional document reading element shown in FIG. 1, and FIG. 3 is a diagram showing a document according to the present invention. FIG. 4 is a diagram showing the structure of an embodiment of the reading element, and is a diagram showing the relationship between light absorption coefficient and wavelength in amorphous silicon, microcrystalline silicon, etc. 1...Amorphous silicon which is a photoconductor, 2...IT
Transparent electrode such as O, 3... Metal electrode, 4... Substrate, 5
...Microcrystalline silicon that is a photoconductor. Figure 1 Figure 2 Stock (μm) Figure 3 Figure 4 1.4 16 1.8 20 22
To photon efnon - (eV)
Claims (1)
を着膜した後さらにこの上面に透明電極を晶シリコン層
を介在させたことを特徴とする原稿ある特許請求の範囲
第（１）項記載の原稿読取素子。(1) A document characterized in that a divided silicon film is deposited on a substrate in a number corresponding to a predetermined number of pixels, and then a transparent electrode is interposed on the upper surface of the film with a crystalline silicon layer interposed therebetween. ) Document reading element described in section 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58063364A JPS59188965A (en) | 1983-04-11 | 1983-04-11 | Original reading element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58063364A JPS59188965A (en) | 1983-04-11 | 1983-04-11 | Original reading element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59188965A true JPS59188965A (en) | 1984-10-26 |
Family
ID=13227138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58063364A Pending JPS59188965A (en) | 1983-04-11 | 1983-04-11 | Original reading element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59188965A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63220568A (en) * | 1987-03-10 | 1988-09-13 | Mitsui Toatsu Chem Inc | Photoelectric conversion element |
| US4937454A (en) * | 1987-11-19 | 1990-06-26 | Hitachi, Ltd. | Radiation detector |
| US5184200A (en) * | 1991-03-27 | 1993-02-02 | Canon Kabushiki Kaisha | Thin film semiconductor device with particular grain size |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57187971A (en) * | 1981-05-15 | 1982-11-18 | Agency Of Ind Science & Technol | Solar cell |
| JPS586164A (en) * | 1981-07-03 | 1983-01-13 | Fuji Photo Film Co Ltd | Solid-state image pickup device |
-
1983
- 1983-04-11 JP JP58063364A patent/JPS59188965A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57187971A (en) * | 1981-05-15 | 1982-11-18 | Agency Of Ind Science & Technol | Solar cell |
| JPS586164A (en) * | 1981-07-03 | 1983-01-13 | Fuji Photo Film Co Ltd | Solid-state image pickup device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63220568A (en) * | 1987-03-10 | 1988-09-13 | Mitsui Toatsu Chem Inc | Photoelectric conversion element |
| US4937454A (en) * | 1987-11-19 | 1990-06-26 | Hitachi, Ltd. | Radiation detector |
| US5184200A (en) * | 1991-03-27 | 1993-02-02 | Canon Kabushiki Kaisha | Thin film semiconductor device with particular grain size |
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