JPS59182577A - Manufacture of silicon wafer for solar cell - Google Patents
Manufacture of silicon wafer for solar cellInfo
- Publication number
- JPS59182577A JPS59182577A JP58056595A JP5659583A JPS59182577A JP S59182577 A JPS59182577 A JP S59182577A JP 58056595 A JP58056595 A JP 58056595A JP 5659583 A JP5659583 A JP 5659583A JP S59182577 A JPS59182577 A JP S59182577A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- paste
- silicon wafer
- back side
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 24
- 229910052710 silicon Inorganic materials 0.000 title claims description 24
- 239000010703 silicon Substances 0.000 title claims description 24
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 239000012535 impurity Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 230000002265 prevention Effects 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 24
- 238000010586 diagram Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 235000001630 Pyrus pyrifolia var culta Nutrition 0.000 description 1
- 240000002609 Pyrus pyrifolia var. culta Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はＰ型シリコンウェハ（こよって、太陽電層（こ
用いられるｎ”Ｐ”Ｐ＋接合のシリコンウェハを製造す
るための方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing P-type silicon wafers (and thus n"P" P+ junction silicon wafers used for solar photovoltaic layers).
従来から効率のよいＢ Ｓ Ｆ （Ｂａｃｋ ５ｕｒｆ
□ａｃｅＦｉｅｌｄ ） 化されたシリコンウェハが
太陽電池に用いられているが、当該ウェハの製造は、次
の如き工程を経て冥施されている。Traditionally efficient BSF (Back 5urf)
□aceField) Silicon wafers are used in solar cells, but the production of these wafers is complicated through the following steps.
すなわち第１図の工程説明図が示す通り、先ず（イ）に
あって用意されたＰ型シリコンウェハに対し、燐、ボロ
ン等の３価の不純物を拡散させることにより、（ロ）の
如くＰ型シリコンウェハの全表面に、シリコン酸化膜Ａ
により被覆されたｎ＋層が形成されてＰｎ＋ 接合を得
る。That is, as shown in the process diagram of FIG. 1, first, by diffusing trivalent impurities such as phosphorus and boron into the P-type silicon wafer prepared in (a), P-type silicon wafers as shown in (b) are Silicon oxide film A is applied to the entire surface of the mold silicon wafer.
An n+ layer coated with is formed to obtain a Pn+ junction.
次に上記シリコン酸化膜Ａを弗化水素溶液にて除去した
後、？層の裏面にＡｔペーストＢをスクリーン印刷し、
これを空気中にて焼成することでＡｔをｎ 層からＰ型
シリコンウェハのＰ層に拡散させ、これによってＰ＋層
を形成することによりｎ”ＰＰ 接合とするＢＳＦ化
処理を行ない、このと蛭上記Ｐ 層の下面に付着残存し
ているＡｔ ペースト酸化層ＣをＨＣＡ。Next, after removing the silicon oxide film A with a hydrogen fluoride solution,? Screen print At paste B on the back side of the layer,
By firing this in air, At is diffused from the n layer to the P layer of the P type silicon wafer, thereby forming a P+ layer and performing BSF processing to form an n''PP junction. HCA the At paste oxide layer C remaining on the bottom surface of the P layer.
ＮａＯＨ等による溶液に除去するものである。It is removed using a solution such as NaOH.
もちろん、上記のようにして得られたｎ＋ＰＰ＋接合の
シリコンウェハは、その裏面側に裏面電極を、表面側に
表面電極を形成して太陽電池となるのであるが、第１図
の＠に示した上記の状態にあっては、ｎ 層の外周側部
分がＰ＋層と接触したものとなるため、当該接触が太陽
電池としての出力を低下させることになり、このため（
ハ）につき、その外周縁にスピングラインダー等による
機械研磨をかけ、ｎ 層の外周側＋
部分とＰ層の外周側部分とを削除することにより、（ト
）の如き最終のシ、リコンウエハを得るようにしている
。Of course, the n+PP+ junction silicon wafer obtained as described above becomes a solar cell by forming a back electrode on the back side and a front electrode on the front side. In the above state, the outer peripheral part of the n layer comes into contact with the p+ layer, and this contact reduces the output of the solar cell.
For c), the outer periphery is mechanically polished using a spin grinder or the like to remove the outer periphery + part of the n layer and the outer periphery part of the p layer, thereby obtaining the final silicon wafer as shown in (g). That's what I do.
このため従来法によるときは、極めて薄いシリコンウェ
ハの外周縁を研磨するといった面倒な工程を強いられ、
生産性が悪くなると共に、研磨中に当該ウェハを破損す
ることもあり、かつ（ト）の研削端縁りが粗面となって
しまうため太陽電池としての効率も低下してしまうとい
った欠陥があった。For this reason, when using the conventional method, a tedious process such as polishing the outer periphery of an extremely thin silicon wafer is required.
In addition to poor productivity, the wafer may be damaged during polishing, and (g) the grinding edge becomes a rough surface, resulting in a decrease in efficiency as a solar cell. Ta.
本発明、は上記難点Ｉこ鑑み、研削手段を施すことなし
に、？ 層とＰ＋層との接触なきｎ” ＰＰ＋接合シ
リコンウニ八を製造し得るようになし、もってその生産
性と太陽電池の効率とを向上させようとするもので、そ
の特徴とするところは、Ｐ型シリコンウェハの裏面外周
部に、Ｓ ｉ０２ 、ＴｉＯ２、ＭｇＯ２等のペースト
による不純物拡散防止層を印刷し、これ（こ燐、ボロン
等による拡散処理を施すこと番こより、当該不純物拡散
防止層を除く全表面に、シリコン酸化膜で覆われたｎ＋
層を形成し、次（こ弗化水素等の溶液処理によって当該
シリコン酸化膜ト前記不純物拡散防止層を除去した後、
その裏面中央部に露呈した裏面側ｎ 層の下面にＡ４ペ
ーストを印刷し、これを空気中にて焼成することにより
、当該Ａｔペーストを上記裏面中央部の計 層から当該
Ｐ型シリコンウェハのＰ層に拡散させ、これによるＰ＋
層を形成することでｎ”ＰＰ＋接合とするＢＳＦ化処理
を行ない、さらに上記Ｐ＋層の下面に形成されているＡ
Ａペースト酸化層をＨＣｔ 、ＮａＯＨ等による溶液処
理によって除去するようにしたことにある。In view of the above-mentioned difficulty I, the present invention provides ? The purpose is to make it possible to manufacture n'' PP+ junction silicon urchins without contact between the P+ layer and the P+ layer, thereby improving the productivity and efficiency of solar cells. An impurity diffusion prevention layer made of a paste such as Si02, TiO2, MgO2, etc. is printed on the outer periphery of the back surface of the mold silicon wafer, and then a diffusion treatment with phosphorus, boron, etc. is performed to remove the impurity diffusion prevention layer. n+ surface covered with silicon oxide film
After forming a layer and removing the impurity diffusion prevention layer from the silicon oxide film by a solution treatment such as hydrogen fluoride,
By printing an A4 paste on the lower surface of the n layer on the back side exposed at the center of the back side and baking it in the air, the At paste is applied from the n layer at the center of the back side to the P of the P type silicon wafer. diffused into the layer, resulting in P+
By forming a layer, BSF processing is performed to form an n''PP+ junction, and furthermore, A
The oxidized layer of paste A is removed by solution treatment using HCt, NaOH, or the like.
本発明を第２図の工程説明図によって詳記すれば、（イ
）に示す如く例“えば直径３インチ、厚さ３００μｍ１
比抵抗ｌΩｍのＰ型シリコンウェハ１を用意し、先ず当
該ウェハ１の裏面１′にあって、その外周部に不純物拡
散防止層２を環状にスクリーン印刷法等により印刷する
。The present invention will be described in detail with reference to the process diagram of FIG.
A P-type silicon wafer 1 having a specific resistance of 1Ωm is prepared, and first, an impurity diffusion prevention layer 2 is printed in a ring shape on the outer circumference of the back surface 1' of the wafer 1 by screen printing or the like.
この際上記拡散防止層２の素材としては、５１０２、Ｔ
ＩＯ□、ＭｇＯ２等のセラミック系酸化物を用いるのが
よく、印刷に際しては例えば上記５ｉ０２を主成分とし
たペーストを用いることになるが、ペーストを得るには
既知の如＜、ＳｉＯ２等がセルロース系有機バインダー
、有機溶剤により調合される。At this time, the materials for the diffusion prevention layer 2 are 5102, T
Ceramic oxides such as IO□, MgO2, etc. are preferably used, and when printing, for example, a paste containing the above-mentioned 5i02 as a main component is used. It is formulated using an organic binder and an organic solvent.
次ζこ上記（ロ）のものに対し燐、ボロン等の不純物に
よる拡散処理を第１図の（ロ）に示す場合と同じく施す
ことで、ｆ→の通シ上記不純物拡散防止層２を除く全表
面にｎ十層を形成するのであり、従って当該ｎ中層とし
ては、表面から外周側面にかけての表面側ｎ十層３と裏
面中央部における裏面側ｎ土層３′ とが、分断状に形
成されること＼なり、これらｎ十層３．３′の表面には
シリコン酸化膜４が形成されているのであり、こ＼で上
記ｎ十層の面抵抗は５０Ω２４］、拡散層の深さは０２
μｍでちった。Next, by applying the diffusion treatment using impurities such as phosphorus and boron to the above (b) in the same manner as shown in (b) of FIG. n0 layers are formed on the entire surface, and therefore, the n middle layer is divided into the n0 layers 3 on the front side from the front side to the outer peripheral side and the n layer 3' on the back side at the center of the back side. Therefore, the silicon oxide film 4 is formed on the surface of these n0 layers 3 and 3', and the sheet resistance of the n0 layers is 50Ω24], and the depth of the diffusion layer is 02
It was measured in μm.
次に上記のものに対し弗化水素溶液にて処理することｆ
こより、上記のシリコン酸化膜４と、Ｓ ｉ ０２等に
よる前記不純物拡散防止層２とを除去することにより、
同図のに）の状態となし、次に（ホ）に示すｙ口く裏面
側ｎ土層３′の下面にＡｔペースト６をスクリーン印刷
等の手段ｌこて印刷するのでありこの際用いられるＡｊ
ペースト６としてｆｄ、３５０メツシュ以上のアルミニ
ウム粉を主成分となし、前記の５ｉ０２ペーストｊ同じ
よう番こして調合したものを用いることができ、当該印
刷による層厚は２０〜４０μｍ とした０
さらに上記のものを空気中にて８００℃〜９００℃の温
度により、１〜５分間焼成するのであるが、当該処理に
よってＡｔ ペースト５のＡｔ は、裏面側層層３′を
突き破りＰ型ンリコンウエハ１のＰ層にまで拡散して行
き、これにより（へ）の如くＰ層ζこ隣接した１層を形
成することができ、かくしてｎ”ＰＰ＋接合とするＩｊ
Ｓ Ｆ化処理が完結される。Next, treat the above items with a hydrogen fluoride solution f
Therefore, by removing the silicon oxide film 4 and the impurity diffusion prevention layer 2 made of S i 02 or the like,
In the same figure, the At paste 6 is printed on the lower surface of the soil layer 3' on the back side shown in (e) using a method such as screen printing. Aj
As the paste 6, a paste containing fd, 350 mesh or more aluminum powder as the main component, prepared in the same manner as the above 5i02 paste j, can be used, and the layer thickness by printing is 20 to 40 μm. The wafer is baked in air at a temperature of 800° C. to 900° C. for 1 to 5 minutes, and as a result of this process, the At of the paste 5 breaks through the back side layer 3' and forms the P of the P-type silicon wafer 1. As a result, it is possible to form one layer adjacent to the P layer ζ as shown in (below), thus forming an n''PP+ junction.
The SF processing is completed.
最後−に上記（へ）にあってＰ＋層の下面（こ形成され
ているＡｔペースト酸化＠６をＨＣｌ 等により除去す
ることで、太陽電池用シリコンウェハ７が（ト）の如く
製造し得ること＼なシ、とのＰ＋層下面に裏面電極を、
表面側ｎ十 層３の上面ｌこ表面電極を形成し１．さら
に当該電極を反射防止膜により被覆して、太陽電池を得
ること＼なる。Finally, by removing the At paste oxide @ 6 formed on the lower surface of the P+ layer in (g) above with HCl etc., the silicon wafer 7 for solar cells can be manufactured as shown in (g). Place the back electrode on the bottom surface of the P+ layer with \nashi,
1. Forming a surface electrode on the upper surface of the layer 3 on the surface side; Furthermore, the electrode is coated with an antireflection film to obtain a solar cell.
不発明は上記の説示により明らかな通り、ｎ層形成のた
めの拡蔽処理前に、予めＰ型シリコンウェハの裏面外周
部に不純物拡散防止層を形成しておくようにしたので、
Ｐ型シリコンウェハの裏面には表面側ｎ十層と分断状に
、しかもその中央部だけに裏面側ｎ°十中層形成される
こと＼ｌす、この結果ｎ土層とＰ＋層との接触なき製品
が労せずして得られるので、従来法の如き研磨作業は不
要となり作業性を改善できると共に、研磨による粗面も
生じないので効率のよい太陽電池が得られ、作業中にウ
ェハを破損するといった難点も解消される。As is clear from the above explanation, the non-invention is that an impurity diffusion prevention layer is formed in advance on the outer periphery of the back surface of the P-type silicon wafer before the expansion process for forming the n-layer.
On the back side of a P-type silicon wafer, the n° layer on the front side is separated from the n layer on the front side, and the n° layer on the back side is formed only in the center. As a result, there is no contact between the n layer and the P+ layer. Since the product can be obtained without much effort, there is no need for polishing work as in the conventional method, improving workability, and since there is no rough surface caused by polishing, highly efficient solar cells can be obtained, and wafers are not damaged during work. Such difficulties will also be resolved.
第１図の（イ）〜（ト）は従来の太陽電池用シリコンウ
ェハ製造法を示す工程説明図、第２図の（イ）〜（ト）
は本発明に係る同製造法の工程説明図である。
１・・・・−Ｐ２Ｎシリコンウェハ
２・・・・・不純物拡散防止層
３・・・・・表面側ｎ 層
３′・・・・裏面側層層
４・・・・・シリコン酸化膜
５・・・・−Ａｔペースト
６・・・・・Ａ４ペースト酸化層
ｍｔ図
第 ２ 図(A) to (G) in Figure 1 are process explanatory diagrams showing the conventional method for manufacturing silicon wafers for solar cells, and (A) to (G) in Figure 2
FIG. 2 is a process explanatory diagram of the manufacturing method according to the present invention. 1...-P2N silicon wafer 2... Impurity diffusion prevention layer 3... Front side n layer 3'... Back side layer 4... Silicon oxide film 5. ...-At paste 6...A4 paste oxide layer mt diagram Fig. 2
Claims (1)
２、ＭｇＯ□等のペーストによる不純物拡散防止層を印
刷し、これに燐、ボロン等による拡散処理を施すことに
より、当該不純物拡散防止層を除く全表面に、シリコン
酸化膜で覆−われたｎ＋層を形成し、次に弗化水素等の
溶液処理、によって当該シリコン酸化膜と前記不純物拡
散防止層を除去した後、その裏面中央部、に露呈した裏
面１１１１１ ｎ＋層の下面にＡｔペーストを印刷し、
これを空気中にて焼成することにより、当該Ａ′ｔペー
ストのＡｔ を上記裏面中央部のｎ＋層から当該Ｐ型シ
リコンウェハのＰ層に拡散させ、これ番こよるＰ＋層を
形成することでｎ＋ＰＰ＋接合とするＢＳＦ化処理を行
ない、さらに上記Ｐ＋層の下面番こ形成されているＡｔ
ペースト酸化層をＨＣＩ 、 ＮａＯＨ等による溶液
処理ζこよって除去するようにしたことを特徴とする太
陽電池用シリコンウェハの製造方法。-5in2°TlO on the outer periphery of the back side of the P-type silicon wafer
2. By printing an impurity diffusion prevention layer made of a paste such as MgO□ and performing a diffusion treatment with phosphorus, boron, etc., the entire surface except the impurity diffusion prevention layer is covered with an n+ silicon oxide film. After forming a layer and removing the silicon oxide film and the impurity diffusion prevention layer by treatment with a solution such as hydrogen fluoride, At paste is printed on the lower surface of the back surface 11111 n+ layer exposed at the center of the back surface. death,
By firing this in the air, the At of the A't paste is diffused from the n+ layer at the center of the back surface to the P layer of the P type silicon wafer, thereby forming a highly concentrated P+ layer. BSF processing is performed to form an n+PP+ junction, and the At
A method for manufacturing a silicon wafer for solar cells, characterized in that the paste oxide layer is removed by solution treatment using HCI, NaOH, etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58056595A JPS59182577A (en) | 1983-03-31 | 1983-03-31 | Manufacture of silicon wafer for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58056595A JPS59182577A (en) | 1983-03-31 | 1983-03-31 | Manufacture of silicon wafer for solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59182577A true JPS59182577A (en) | 1984-10-17 |
| JPH0362031B2 JPH0362031B2 (en) | 1991-09-24 |
Family
ID=13031551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58056595A Granted JPS59182577A (en) | 1983-03-31 | 1983-03-31 | Manufacture of silicon wafer for solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59182577A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0233980A (en) * | 1988-07-22 | 1990-02-05 | Sharp Corp | Manufacture of solar cell |
| WO2001084639A1 (en) * | 2000-05-03 | 2001-11-08 | Universität Konstanz | Method for producing a solar cell, and solar cell produced according to said method |
| EP1321446A1 (en) | 2001-12-20 | 2003-06-25 | RWE Solar GmbH | Method of forming a layered structure on a substrate |
| JP2013168678A (en) * | 2012-01-10 | 2013-08-29 | Hitachi Chemical Co Ltd | Mask-forming composition, method for manufacturing solar cell substrate, and method for manufacturing solar cell element |
| JP2013168677A (en) * | 2012-01-10 | 2013-08-29 | Hitachi Chemical Co Ltd | Mask-forming composition, method for manufacturing solar cell substrate, and method for manufacturing solar cell element |
| JP2014112636A (en) * | 2012-01-10 | 2014-06-19 | Hitachi Chemical Co Ltd | Barrier layer-forming composition, method of manufacturing substrate for solar cell and method of manufacturing solar cell element |
-
1983
- 1983-03-31 JP JP58056595A patent/JPS59182577A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0233980A (en) * | 1988-07-22 | 1990-02-05 | Sharp Corp | Manufacture of solar cell |
| WO2001084639A1 (en) * | 2000-05-03 | 2001-11-08 | Universität Konstanz | Method for producing a solar cell, and solar cell produced according to said method |
| US7179987B2 (en) | 2000-05-03 | 2007-02-20 | Universitat Konstanz | Solar cell and method for making |
| EP1321446A1 (en) | 2001-12-20 | 2003-06-25 | RWE Solar GmbH | Method of forming a layered structure on a substrate |
| JP2013168678A (en) * | 2012-01-10 | 2013-08-29 | Hitachi Chemical Co Ltd | Mask-forming composition, method for manufacturing solar cell substrate, and method for manufacturing solar cell element |
| JP2013168677A (en) * | 2012-01-10 | 2013-08-29 | Hitachi Chemical Co Ltd | Mask-forming composition, method for manufacturing solar cell substrate, and method for manufacturing solar cell element |
| JP2013219372A (en) * | 2012-01-10 | 2013-10-24 | Hitachi Chemical Co Ltd | Barrier layer forming composition, barrier layer, method for manufacturing solar cell substrate, and method for manufacturing solar cell element |
| JP2014112636A (en) * | 2012-01-10 | 2014-06-19 | Hitachi Chemical Co Ltd | Barrier layer-forming composition, method of manufacturing substrate for solar cell and method of manufacturing solar cell element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0362031B2 (en) | 1991-09-24 |
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