JPS5918155A - Ceramic composition - Google Patents
Ceramic compositionInfo
- Publication number
- JPS5918155A JPS5918155A JP57128111A JP12811182A JPS5918155A JP S5918155 A JPS5918155 A JP S5918155A JP 57128111 A JP57128111 A JP 57128111A JP 12811182 A JP12811182 A JP 12811182A JP S5918155 A JPS5918155 A JP S5918155A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- ceramic composition
- ceramic
- multilayer ceramic
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、ｐｂｌ含む複合ペロブスカイト型化合物であ
るｐｂ ＜Ｍｑｙ４ＦｅｙＡＡ）ＯＪｔびＰｂ（Ｍｑ％
Ｔａ％）０３を主成分とする磁器組成物に関するもので
あり、その目的とするところは、高誘電率で誘電体損失
が小さく、絶縁抵抗が高く、なおかつ１０００℃以下の
低温で焼結が可能な高誘電率系の磁器組成物を提供する
ことにある。DETAILED DESCRIPTION OF THE INVENTION The present invention is a composite perovskite compound containing pbl, pb<Mqy4FeyAA)OJt and Pb(Mq%
This relates to a ceramic composition whose main component is Ta%) 03, and its objectives are to have a high dielectric constant, low dielectric loss, high insulation resistance, and can be sintered at low temperatures below 1000°C. An object of the present invention is to provide a high dielectric constant ceramic composition.
従来、高誘電率系の磁器組成物としてはチタン酸バリウ
ムＢａＴｉＯ３を主成分として、これにジルコン酸カル
シウムＣａ Ｚ ｒＯ３＋チタン酸カルシウムＣａＴｘ
Ｏｓ ＋ スズ酸カルシウムＣａ５ｎｏ３．チタン酸ス
トロンチウムＳ ｒ Ｔ ｉＯ３などを適量添加して特
性を改善したものが実用化されている。これらの磁器の
焼結温度は概わ１３００℃〜１４００℃と高いものであ
った。Conventionally, high dielectric constant ceramic compositions include barium titanate BaTiO3 as the main component, and calcium zirconate CaZ rO3 + calcium titanate CaTx.
Os + Calcium stannate Ca5no3. Products with improved characteristics by adding an appropriate amount of strontium titanate S r TiO3 have been put into practical use. The sintering temperature of these porcelains was generally as high as 1300°C to 1400°C.
近年、電子機器分野の発展とともに、電子機器の小形、
軽量化が著しく、従来円板形状で用いられていた磁器コ
ンデンサにおいても、小形で大容量を達成するために積
層構造を持った積層セラミックコンデンサが開発され広
く使用されている。In recent years, with the development of the electronic equipment field, electronic equipment has become smaller and smaller.
Multilayer ceramic capacitors with a laminated structure have been developed and widely used in order to significantly reduce weight and achieve large capacitance in a compact size compared to the conventionally used disk-shaped ceramic capacitors.
積層セラミックコンデンサにおいては図面に示すように
、磁器誘電体１の上下に内部電極２を配して、小さな単
板コンデンサを多数個並列に接続し、積み重ねた構造を
とっており、内部電極２は交互に左右いずれかの一外部
電極３に接続されている。As shown in the drawing, a multilayer ceramic capacitor has a structure in which internal electrodes 2 are arranged above and below a ceramic dielectric 1, and many small single-plate capacitors are connected in parallel and stacked. They are alternately connected to one of the left and right external electrodes 3.
この積層セラミックコンデンサでは、その製造上内部電
極をセラミック誘電体に埋込んだ状態で焼結する必要が
あるが、従来の高誘電率系の磁器組成物では前述のよう
に焼成温度が１３００℃以上と高いため、内部電極の材
料としてはこのような高温でも安定な白金、あるいはパ
ラジウムのような高価な貴金属を使わざるを得なかった
。従って１００ｏ’ｃ以下の低温で焼結できる磁器誘電
体材料を開発し、これを積層セラミックコンデンサに用
いることができれば、内部電極材料として銀糸合金、ニ
ッケル系合金などの安価な金属材料を使用することがで
きるため、低コストの積層セラミックコンデンサを供給
することが可能となる。In order to manufacture this multilayer ceramic capacitor, it is necessary to sinter the internal electrodes while embedding them in the ceramic dielectric, but as mentioned above, the firing temperature for conventional high dielectric constant ceramic compositions is 1300°C or higher. As a result, the internal electrodes had to be made of platinum, which is stable even at such high temperatures, or an expensive noble metal such as palladium. Therefore, if we can develop a porcelain dielectric material that can be sintered at a low temperature of 100o'c or less and use it in multilayer ceramic capacitors, we can use inexpensive metal materials such as silver thread alloys and nickel-based alloys as internal electrode materials. This makes it possible to supply low-cost multilayer ceramic capacitors.
本発明は上記のような背景のもとに、種々の複合ベロ
スカイト型化合物について研究を重ねた結果、Ｐｂ （
％Ｆ ｅｙＷｙ ）０３テ表わされる化合物とｐｂ（Ｍ
ｇ％Ｔａ％）ｏ３で表わされる化合物を用いることによ
り、誘電率が高く、誘電体損失が小さく、絶縁抵抗が高
く、なおかつ低温で焼結可能な磁器誘電体材料の開発に
成功したものである。The present invention is based on the above-mentioned background.
As a result of repeated research on skite-type compounds, Pb (
%FeyWy)03te and pb(M
By using a compound represented by g%Ta%)o3, we succeeded in developing a porcelain dielectric material that has a high dielectric constant, low dielectric loss, high insulation resistance, and can be sintered at low temperatures. .
以下本発明の実施例について詳細に説明する。Examples of the present invention will be described in detail below.
まず、焼結により Ｐ ｂ （Ｍｇ％Ｆ ｅ、Ｗ、 ）
０３及びＰｂ （ＭｑｙＴ ａ％）ｏ３の比率が次表に
示すモル比となるように酸化鉛、酸化鉄、酸化タングス
テン、酸化マグネシウム、酸化タンタルを適量秤量し、
これをボールミルを用いて混合した。この粉体原料を７
５０’Ｃ〜８５０℃で仮焼した後、再びボールミルを用
いて粉砕し、この粉砕原料にポリビニールアルコールを
加えて造粒し、直径１３ ｗｎ、厚み０８閣の円板形状
に成形した。その後９２０〜９８０℃の温度で、マグネ
シア質匡鉢中で焼成したのち、両面に銀を主成分とする
電極を付与し、誘電体試料とした。このようにして作成
した試料について電気特性を測定した結果を次表に示す
。ここで誘電率ε８及び誘電体損失ｔａｎδは周波数１
ｋ）ｈで２５℃で測定した。また絶縁抵抗ＩＲは直流６
０Ｖを印加して、室温中で測定した。なお表中の焼成温
度は、焼結して誘電体磁器を作成するための最低温度で
ある。First, by sintering, P b (Mg%Fe, W, )
Weigh appropriate amounts of lead oxide, iron oxide, tungsten oxide, magnesium oxide, and tantalum oxide so that the ratio of 03 and Pb (MqyT a%)o3 becomes the molar ratio shown in the following table,
This was mixed using a ball mill. This powder raw material is
After calcining at 50'C to 850C, the mixture was pulverized again using a ball mill, and polyvinyl alcohol was added to the pulverized raw material to granulate it, which was molded into a disk shape with a diameter of 13 wn and a thickness of 0.8 mm. After that, it was fired in a magnesia pot at a temperature of 920 to 980°C, and electrodes containing silver as a main component were applied to both sides to prepare a dielectric sample. The results of measuring the electrical properties of the samples thus prepared are shown in the following table. Here, the dielectric constant ε8 and dielectric loss tanδ are frequency 1
k) Measured at 25°C in h. Also, the insulation resistance IR is DC6
The measurement was performed at room temperature by applying 0V. Note that the firing temperature in the table is the lowest temperature for sintering to create dielectric ceramic.
（以下余白）
表中の試料ｆ；、１及び６は本発明の範囲外のものであ
り、比較のため示したものである０即ち、Ｐｂ （Ｍｇ
ｙ４Ｆｅ、Ｗ、）ｏ３のモル比Ｘが０９０ ’ｉ超える
と誘電体損失ｔａｎδが犬きく実用的でなく、またＸカ
ニ０６０未満では焼成温度が高くなり、さらに高価な酸
化タンタルの比率が犬きくなるため実用的でない。(Margin below) Samples f;, 1 and 6 in the table are outside the scope of the present invention and are shown for comparison.
If the molar ratio X of y4Fe, W, Therefore, it is not practical.
以上詳述したように、本発明（７） Ｐｂ （Ｍｃｒ３
ＡＦｅ、Ｗ、）０３Ｐ ｂ （Ｍｇｙ’ｒ’ ａ％）０
３系磁器組成物を用いれば、誘電率ε６が３１６０〜４
１ｏＯと大きく、誘電体損失ｔａｎδがｏ６％〜２６チ
と小さく、また絶縁抵抗ＩＲが６２×１ｏ１０Ｑ−Ｃｍ
以上と高い値を示し、温度による容量変化率の小さい高
性能の新規な誘電体磁器組成物が得られる。さらに焼成
温度が９２０℃〜９８０℃ と低温であるために積層セ
ラミックコンデンサに使用した場合に内部電極として銀
糸合金。As detailed above, the present invention (7) Pb (Mcr3
AFe, W, )03P b (Mgy'r' a%)0
If a 3-series ceramic composition is used, the dielectric constant ε6 is 3160 to 4.
It has a large dielectric loss of 1oO, a small dielectric loss tan δ of o6% to 26chi, and an insulation resistance IR of 62×1o10Q-Cm.
A novel dielectric ceramic composition with high performance and a small rate of change in capacitance due to temperature can be obtained. Furthermore, since the firing temperature is as low as 920°C to 980°C, the silver thread alloy is used as an internal electrode when used in multilayer ceramic capacitors.
ニッケル系合金などの安価な金属を用いることができ、
積層セラミックコンデンサの低コスト化を図る上で非常
に有効な価値があるものである。加えて、低温での焼結
が可能なため、焼成に用いる電気炉の保全が容易になる
ばかりでなく、使用電力の北からも省エネルギー化が図
れるものである。Cheap metals such as nickel-based alloys can be used,
This is extremely effective in reducing the cost of multilayer ceramic capacitors. In addition, since sintering can be performed at low temperatures, it is not only easier to maintain the electric furnace used for firing, but also allows for energy savings in terms of power consumption.
従って、積層セラミックコンデンサのみでな〈従来の円
板形磁器コンデンサに応用した場合においても、製造コ
スト上有利となるものである。Therefore, it is advantageous in terms of manufacturing costs not only when applied to multilayer ceramic capacitors but also when applied to conventional disk-shaped ceramic capacitors.
図面は積層セラミックコンデンサの一例を示す一部切欠
斜視図である。
１・・・・・・磁器誘電体、２・・・・・・内部電極、
３・・・・・・外部電極。The drawing is a partially cutaway perspective view showing an example of a multilayer ceramic capacitor. 1... Ceramic dielectric, 2... Internal electrode,
3...External electrode.
Claims (1)
ｅｑＶζ）０３及びマグネシウム・タンタル酸鉛ｐｂ
（Ｍｇ％Ｔａ％）ｏ３からなる二成分組成物をＰｂ（Ｍ
ｇ、Ｆｅ、Ｗ、）ｘ（Ｍｇ、Ｔａ、）１．０３と表わし
た時に組成比Ｘが０６０≦Ｘ≦Ｑ９０の範囲内にあるこ
とを特徴とする磁器組成物。Magnesium, iron, lead tungstate pb (Mg, AF
eqVζ)03 and magnesium lead tantalate pb
(Mg%Ta%)o3
A porcelain composition characterized in that the composition ratio X is within the range of 060≦X≦Q90 when expressed as: g, Fe, W, ) x (Mg, Ta,) 1.03.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57128111A JPS5918155A (en) | 1982-07-21 | 1982-07-21 | Ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57128111A JPS5918155A (en) | 1982-07-21 | 1982-07-21 | Ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5918155A true JPS5918155A (en) | 1984-01-30 |
| JPH032814B2 JPH032814B2 (en) | 1991-01-17 |
Family
ID=14976650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57128111A Granted JPS5918155A (en) | 1982-07-21 | 1982-07-21 | Ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5918155A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4704373A (en) * | 1985-10-29 | 1987-11-03 | Ngk Spark Plug Co., Ltd. | Dielectric ceramic composition and process for producing the same |
| JPH02144277U (en) * | 1989-04-28 | 1990-12-06 | ||
| US5720919A (en) * | 1992-12-23 | 1998-02-24 | Hoechst Aktiengesellschaft | Al2 O3 and Y2 O3 containing silicon nitride having high mechanical strength at high temperatures |
-
1982
- 1982-07-21 JP JP57128111A patent/JPS5918155A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4704373A (en) * | 1985-10-29 | 1987-11-03 | Ngk Spark Plug Co., Ltd. | Dielectric ceramic composition and process for producing the same |
| JPH02144277U (en) * | 1989-04-28 | 1990-12-06 | ||
| US5720919A (en) * | 1992-12-23 | 1998-02-24 | Hoechst Aktiengesellschaft | Al2 O3 and Y2 O3 containing silicon nitride having high mechanical strength at high temperatures |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH032814B2 (en) | 1991-01-17 |
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