JPS59179784A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS59179784A JPS59179784A JP5579783A JP5579783A JPS59179784A JP S59179784 A JPS59179784 A JP S59179784A JP 5579783 A JP5579783 A JP 5579783A JP 5579783 A JP5579783 A JP 5579783A JP S59179784 A JPS59179784 A JP S59179784A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering device
- water
- plate
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ）９色町の技術７１野
不発明はスパッタ法によシ果むＬ回路基叙匈の試料上に
金Ｊｔｊ４脈又はシリサイトド−等を被〉ｈ形成させ池
スパッタ装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) The technique 71 of Nine Colors Town is to form a layer of gold, silicite, etc. on a sample of an L circuit group formed by a sputtering method. This invention relates to improvements in sputtering equipment.
（ｂ） 技術の背景
スパッタ法によ多形成される金Ｊｉｊ４ ｈｓｐユ又に
シリサイドには蒸漸法に比して結晶粒径の制御性に優れ
、突起が少ない等の利点によシｇ細パターンの形成に適
し、またステップカバレツヂも良好でおるため大成を）
集積回路の電離形成にはス）Ｚツタ法が主流にな９つつ
ある。(b) Background of the technology Gold and silicide formed by sputtering have advantages such as better controllability of crystal grain size and fewer protrusions than vapor deposition methods. It is suitable for pattern formation and has good step coverage, so it is highly recommended.)
The Z) vine method is becoming mainstream for forming ionization in integrated circuits.
更に二元以上の組肪からなる４’ｒ：属般も答８．に判
１られその装置構成はβ′発諒桧４１．が痒１単である
ため保守が容易で自動化に有オリである。金λ：３．ｒ
隊成形には主として直ｉｌＡ圧印加法及び成１ｉ！、
’ ：ｌ！１・嵐の有利性からマグネトロン方式が多用
されてい私、マグネトロン方式には磁石の配置やターゲ
ット形状によって４１４々の方式があり、プレーナマク
ネトロン、ニスカン（Ｓ−ＧＬＩｎ）、同軸マグネトロ
ン方式灯。Furthermore, 4'r consisting of two or more components: Answer 8. 1, and the device configuration is β' 41. Since it is only one itch, it is easy to maintain and is suitable for automation. Gold λ: 3. r
Formation is mainly done by direct ilA pressure application method and formation 1i! ,
' :l! 1. The magnetron method is often used due to its advantage in storms.There are 414 different magnetron methods depending on the magnet placement and target shape, including planar magnetron, Niskan (S-GLIn), and coaxial magnetron method.
があシ、何れも直焚′ｉ、 ｅ′界をオＵ用しプラズマ
をクーゲット近傍の局在的空ｉ】］に閉じ込める原理を
４１１用している。However, both use the principle of confining the plasma in the localized space near the Kuget using the direct firing 'i and e' fields.
（Ｃ） 従来技術と…」魁点
第１図は従来のマグネトロン方式くツク装置を示す構成
図である。(C) Prior art...'' Figure 1 is a block diagram showing a conventional magnetron type locking device.
図においてマグネトロンスパック装渦１には一定瓦のア
ルゴンガスを導入する絹入口２及びチャンバ内を減圧排
気する排気口３を備える。金８＝、又は合金素材からな
るターゲット４に角のｑ４流′【ヒ、圧を印加してカソ
ードを構成する。ターゲット４水冷バツキンググレート
５に接着固定しその直には永久イー石６を配置し回転さ
せる。永久磁石によって生ずるターゲット４上の磁場７
に電子サイクロイド運動し、導入したアルゴンガスのス
分子と衝突する結果密度の旨いプラズマが発する。プラ
ズマが磁場７によシ集中し加速されアルゴンイオン（Ａ
ｒ＋）がターゲット４（カソードに衝突してターゲット
原子をた＼き出し、集積路基板８にターゲット４とｔデ
に同一組成の金属を被着ブト族させる。永久研、石６を
ターゲット４中心よりずらせた位置で偏心回転させ磁場
７を辺部に延長させターゲット４の有効利用体積の上を
計る。マグネトロン方式でハ′亀碕界にょシとじこめら
れた高密度プラズマの発生する領域。In the figure, the magnetron pack vortex 1 is equipped with an inlet 2 for introducing a certain amount of argon gas and an exhaust port 3 for depressurizing and exhausting the inside of the chamber. A cathode is formed by applying an angular q4 flow' pressure to a target 4 made of gold 8= or an alloy material. A target 4 is adhesively fixed to a water-cooled bucking grate 5, and a permanent E-stone 6 is placed directly thereon and rotated. Magnetic field 7 on target 4 caused by permanent magnet
The electrons move in a cycloid and collide with the molecules of the introduced argon gas, producing a dense plasma. The plasma is concentrated and accelerated by the magnetic field 7, and argon ions (A
r+) collides with the target 4 (cathode) and knocks out the target atoms, and deposits metal of the same composition on the integrated circuit board 8 on the target 4 and t. The magnetic field 7 is rotated eccentrically at a more shifted position to extend the magnetic field 7 to the side part, and the effective use volume of the target 4 is measured.This is the area where high-density plasma is generated, which is confined in the HA-Kamesaki world using the magnetron method.
スパッタされ、ターゲット４に鋭く深いエローヨンエリ
ア（局部浸食部）を生じターゲット４１発熱する。スパ
ッタ成長方式で基板８に金属膜成膜させる場合、高速で
成長させる程、真壁装置の残留カスの取り込みが少くな
るため、抵抗率−を 表面形成等の服質が改良され
る。箱踪入カを太き下 くして高速成長させる場合
ターゲツト材の発熱は６ 更に上昇し冷却水の循環
のみで幻対応できす熱歪が 等により接着剤がとけ
、ターゲットがはがれ水Ｑガ バッキングプレート
５より妊すｔＬることかある。The sputtering causes a sharp and deep erosion area (locally eroded part) on the target 4, and the target 41 generates heat. When a metal film is formed on the substrate 8 by the sputter growth method, the faster the metal film is grown, the less residual residue from the Makabe device is captured, and the resistivity and surface formation properties are improved. When growing at high speed by reducing the thickness of the input force, the heat generation of the target material increases further, which can be counteracted only by circulating cooling water. It is possible to get pregnant from plate 5.
生 この場合接漸材（ホンテング肪）が応出しスバ
ッた 夕されで汚染のとなる。特にインライン装置
では）検出できず基板にタメージヲ与える。Raw In this case, the contact material (hontengu fat) is spilled and thrown away, resulting in contamination. (especially with in-line equipment), it cannot be detected and damages the board.
回
（４（
υ ンデング剤を用いすねじ止め固定するターゲッ
ト句 取付振材としたスパッタ装置のが供を目的と
する。The target is fixed with screws using a densifying agent.It is intended to be used as a mounting material for sputtering equipment.
旬 ｆｅ） 発明の構成
上記目的は不発り」によれ＋−１兵空処九ｊ箆１”Ｉに
糺誼６よシたターゲットに血流高・電圧を印加して７′
ラズマン を酷起し、基板上に所定の冷胆・を形成
するスバッ丁１ 夕装澁でるって、該ターゲットと
レターゲットを辷 ヒ定すべき水冷バッキンググレ
ートと′ｆｆ：金終： ｙ＜Ｖ Ｉｌｋ向 シート
を介してねじ止め薩１定するようｉｃしたことＰ
によシ達せられる。(Fe) Structure of the Invention The above purpose is to apply a high blood flow/voltage to the targeted target in order to prevent the explosion from occurring.
The sub-batto 1 which raises the razzman and forms a predetermined cold wave on the substrate, the water-cooled backing grating that should hit the target and retarget, and 'ff: gold end: y< V For Ilk, I fixed the IC by screwing it through the sheet.P
be reached.
（ｆ） 発明の実施例 以下本発明の実施例を図面により詳述する。(f) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.
第２図は本発明の一冥施例であるターゲット取付機材を
示す側面図、弗３図はその平面図である。FIG. 2 is a side view showing target mounting equipment which is one embodiment of the present invention, and FIG. 3 is a plan view thereof.
図においてターゲットｌｌと水冷バッキングプレート１
２に区のような対向する凹凸部を設け、この凹凸部にリ
ング状の金Ｊ＠’ｔ８−膜シート１３を装着し、水冷バ
ッキングプレート１２にターゲット１１をねじ１４でね
じ止め固定するものである。In the figure, target 1 and water-cooled backing plate 1
A ring-shaped gold J@'t8-membrane sheet 13 is attached to the uneven part 2, and the target 11 is fixed to the water-cooled backing plate 12 with screws 14. be.
凹凸部に番・ま盛挙の間隙１５を設けるとともに水冷バ
ッキングプレート１２には通気孔１６を設は大気が凹凸
部に閉じ込められない様、空気抜きを設ける。Gaps 15 are provided in the uneven parts, and ventilation holes 16 are provided in the water-cooled backing plate 12 to vent air so that the atmosphere is not trapped in the uneven parts.
本実施例では金属Ｙ鞄脱シー）１３にはインジウム（Ｉ
ｎ）、ねじ１４にはタンタル（Ｔａ）を用いてアルミシ
リコン合金Ｂ（ＡＩ ＳＬ）の形成に効果があったが、
金ＪＡ橡膜シート１３は柔軟性があり、高融点金属でし
かも熱伝導性の優れた素材であれはよい。例えば前述の
インジウムの他に銅（Ｃｕ）、アルミニウム（ｉ）等が
ある。−力ねじ材とじてはターフット素材と同−拐がよ
いことｃｊ勿端でるるか硬度があシ熱膨張係しが小ちく
加工付のよいものであれはよく＠述したアルミシリコン
合金をターゲツト材とした楊合りンｊル、モリブデン（
ＭＯ）等が適している。基板が大口径化となるに従い使
用するターゲットも大型化し侵用抜のターゲット交換は
容易でなくボンデング剥離、ターゲットの再ボ／デン等
に時間がかが多作業性が悪い。不発明のねじ止め取付機
構６ｉ折、イ作が容易でめるため似寄に有効であり安全
性も向上する。In this example, indium (I
n), using tantalum (Ta) for the screw 14 was effective in forming aluminum silicon alloy B (AI SL),
The gold JA membrane sheet 13 may be made of a material that is flexible, has a high melting point, and has excellent thermal conductivity. For example, in addition to the above-mentioned indium, there are copper (Cu), aluminum (i), and the like. - As for the force screw material, it is better to use the same material as the terfoot material.Of course, if the material has a good hardness and a small thermal expansion coefficient and can be easily machined, we often target the aluminum-silicon alloy mentioned above. The materials used were Yang rin, molybdenum (
MO) etc. are suitable. As the diameter of the substrate becomes larger, the target used also becomes larger, and it is not easy to replace the target without invasion, and it takes time to remove the bond, rebond/den the target, etc., and the workability is poor. The uninvented screw mounting mechanism 6i can be easily folded and assembled, which is effective for mounting and improves safety.
金オ山ン４がそシート１３ぬ５クーグツト拐のエロージ
ミンエリア近傍に介在するから熱伝４ｆＪ従来に比して
有効となシ熱歪をａ少させることができる。Since the metal layer 4 is interposed near the erosion area of the sheet 13 and 5, the effective heat distortion can be reduced compared to the conventional heat transfer 4fJ.
（ｇ） 発明の効鰍
以上ｔｌ：細に説明したように４＼う１．明のクーゲッ
ト取付後幅とすることにより作業性は向上し、ターゲッ
トの有効オね用事の向上が期待できる等Ｌ１ミ□（化が
計れる大きな効果力・ある。(g) Beyond the effectiveness of the invention tl: As explained in detail, 4\U1. By increasing the width after installing the lighter Kuget, work efficiency is improved, and it is expected that the effective use of the target will be improved.
第１図は従来のマグネトロンスパッタ＆ｉｆＸ ’ｋ
示す４’＋キ成図、第２図は本発明の一実施例であるタ
ーゲット取付機構を示す側面図、第３図はその平面図で
ある。
図中、１１・・・・・・ターゲット、１２・・・・・・
水冷バッギングプレート、１３・・・・・・金Ｆｉ 淘
膜シート、１４・・・・・・ねじ、１５・・・・・・間
隙、１６・・・・・・通気孔。
第１ 図
第２図
第３８Figure 1 shows conventional magnetron sputtering &ifX'k
2 is a side view showing a target mounting mechanism according to an embodiment of the present invention, and FIG. 3 is a plan view thereof. In the figure, 11...Target, 12...
Water-cooled bagging plate, 13...Gold Fi membrane sheet, 14...Screw, 15...Gap, 16...Vent hole. Figure 1 Figure 2 Figure 38
Claims (1)
ターゲットを固定すべき水冷バッキンググレートとを金
属薄膜シートを介してねじ止めｌａ定するよってし１こ
ことを％徴とするスパッタ装置。A sputtering device in which a direct current high-voltage column and a water-cooled backing grate to which the target is to be fixed are fixed to a target placed in a processing chamber by screws via a metal thin film sheet, thereby making the sputtering device 1%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5579783A JPS59179784A (en) | 1983-03-31 | 1983-03-31 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5579783A JPS59179784A (en) | 1983-03-31 | 1983-03-31 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59179784A true JPS59179784A (en) | 1984-10-12 |
Family
ID=13008899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5579783A Pending JPS59179784A (en) | 1983-03-31 | 1983-03-31 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59179784A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63154661U (en) * | 1987-03-26 | 1988-10-11 | ||
| JPH02215122A (en) * | 1989-02-16 | 1990-08-28 | Fujitsu Ltd | Dry etching device |
| US4966676A (en) * | 1988-05-16 | 1990-10-30 | Kabushiki Kaisha Toshiba | Sputtering target |
| US5032468A (en) * | 1988-11-25 | 1991-07-16 | Vereinigte Aluminium Werke | Composite aluminum plate and target for physical coating processes produced therefrom and methods for producing same |
| US5268236A (en) * | 1988-11-25 | 1993-12-07 | Vereinigte Aluminum-Werke Ag | Composite aluminum plate for physical coating processes and methods for producing composite aluminum plate and target |
| US6733641B1 (en) * | 1996-06-21 | 2004-05-11 | Praxair S. T. Technology, Inc. | Mechanically joined sputtering target and adapter therefor |
| CN108486535A (en) * | 2018-05-17 | 2018-09-04 | 宁波江丰电子材料股份有限公司 | Target material assembly |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57145981A (en) * | 1981-03-03 | 1982-09-09 | Toshiba Corp | Target for sputtering device |
| JPS57207175A (en) * | 1981-06-17 | 1982-12-18 | Anelva Corp | Target for sputtering device |
-
1983
- 1983-03-31 JP JP5579783A patent/JPS59179784A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57145981A (en) * | 1981-03-03 | 1982-09-09 | Toshiba Corp | Target for sputtering device |
| JPS57207175A (en) * | 1981-06-17 | 1982-12-18 | Anelva Corp | Target for sputtering device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63154661U (en) * | 1987-03-26 | 1988-10-11 | ||
| US4966676A (en) * | 1988-05-16 | 1990-10-30 | Kabushiki Kaisha Toshiba | Sputtering target |
| US5032468A (en) * | 1988-11-25 | 1991-07-16 | Vereinigte Aluminium Werke | Composite aluminum plate and target for physical coating processes produced therefrom and methods for producing same |
| US5268236A (en) * | 1988-11-25 | 1993-12-07 | Vereinigte Aluminum-Werke Ag | Composite aluminum plate for physical coating processes and methods for producing composite aluminum plate and target |
| JPH02215122A (en) * | 1989-02-16 | 1990-08-28 | Fujitsu Ltd | Dry etching device |
| US6733641B1 (en) * | 1996-06-21 | 2004-05-11 | Praxair S. T. Technology, Inc. | Mechanically joined sputtering target and adapter therefor |
| CN108486535A (en) * | 2018-05-17 | 2018-09-04 | 宁波江丰电子材料股份有限公司 | Target material assembly |
| CN108486535B (en) * | 2018-05-17 | 2021-03-12 | 宁波江丰电子材料股份有限公司 | Target material assembly |
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