JPS59175725A - Multilayer resist film - Google Patents
Multilayer resist filmInfo
- Publication number
- JPS59175725A JPS59175725A JP5072083A JP5072083A JPS59175725A JP S59175725 A JPS59175725 A JP S59175725A JP 5072083 A JP5072083 A JP 5072083A JP 5072083 A JP5072083 A JP 5072083A JP S59175725 A JPS59175725 A JP S59175725A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist
- pattern
- multilayer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体装置の微細加工技術のりソゲラフイエ程
に用いられる多層レジスト膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a multilayer resist film used in microfabrication technology for semiconductor devices.
従来、リングラフィ工程で２層レジスト膜を用いる技術
としては、Ｈｙｂｒｉｄ ｅ−ｂｅａｍ／ｄｅｅｐ −
ＵＶｅｘｐｏｓｕｒｅ ｕｓｉｎｇ ｐｏｒｔａｂｌｅ
ｃｏｎｆｏｒｍａｂｌｅ ｍａｓｋ−ｉｎｇ （ＰＣ
Ｍ） ｔｅｃｈｎｉｇｕｅ ； Ｂ、Ｊ、Ｌｉｎ ａｎ
ｄ Ｔ＋Ｈ＋Ｐ＋Ｃｈａｎｇ 、 Ｊ 、Ｖａ ｃ 、
Ｓｅ ｔ、 Ｔｅ ｃｈｎｏ １． ＋ １６（６）
、 Ｎｏｖ／Ｄｅ ｃ、 １９７９が知られている。こ
の技術は下層にポリメチルメタクリレ−） （ＰＭＭＡ
）のような遠紫外感応ポジ型レジスト膜を、上層にＡＺ
−１３５０Ｊ （シラプレー社製）のようなポジ型フ
ォトレジスト膜を設け、まず上層のフォトレジスト膜を
フォトリングラフィによＶ） ｚ！ターニングした後、
このフォトレジスト・母ターンをマスクとして遠紫外光
を全面に照射し、下層の露出する遠紫外感応？−）型レ
ジン）Ｎ部分を現像液によシ溶解して二層構造のレジス
ト・やターンを形成するものである。このように二層レ
ジスト膜を用いることＫよシ上屡のフォトレジスト膜を
薄くでき、これによって７オトレジスト膜の解像度の向
上、下面からの反射光の影響を抑制でき、ひいては高精
度で微細なレジストパターンを形成できる利点を有する
。しかも、形成されたレジストパターンは二層構造であ
るため、上層を薄くしても十分なマスク作用を有する。Conventionally, as a technology using a two-layer resist film in a phosphorography process, Hybrid e-beam/deep -
UV exposure using portable
conformable mask-ing (PC
M) technique; B, J, Lin an
d T+H+P+Chang, J, Va c,
Set, Techno 1. +16 (6)
, Nov/Dec, 1979 is known. This technology uses polymethyl methacrylate (PMMA) as the lower layer.
) with a deep UV-sensitive positive resist film on top of the AZ
A positive photoresist film such as -1350J (manufactured by Silapray) was provided, and the upper photoresist film was first photolithographically applied. After turning,
Using this photoresist/mother turn as a mask, the entire surface is irradiated with deep ultraviolet light, exposing the underlying layer. -) type resin) The N part is dissolved in a developer to form a two-layer resist pattern and a turn pattern. By using a two-layer resist film in this way, it is possible to make the top photoresist film thinner, which improves the resolution of the photoresist film and suppresses the influence of reflected light from the bottom surface, which in turn makes it possible to create highly accurate and fine photoresist films. It has the advantage of being able to form a resist pattern. Moreover, since the formed resist pattern has a two-layer structure, it has a sufficient masking effect even if the upper layer is made thinner.
しかしながら、上述したＰＣＭの技術ではフォトレジス
トと遠紫外感応レジストの溶剤として一般的に有機溶剤
を用いるため、それらレジスト膜の界面で一部混じシ合
い、その後の熱処理によって下層の遠紫外感応レジスト
の現像液に対して不溶な界面層が形成される。このため
、上層のフォトレジスト膜をパターニングした後、前記
界面層の酸素プラズマによるデスカムが必要となる。そ
の結果、・母ターンの形成工程が増えるばかシか、上層
のレジストパターンに悪影響を及ぼすことなく界面層の
みを酸素プラズマで除去することが難しく、高精度のレ
ジストパターンを形成することは実質的に困難であ、っ
た。However, in the above-mentioned PCM technology, since organic solvents are generally used as solvents for the photoresist and far-UV sensitive resist, some of the organic solvents are mixed at the interface of the resist film, and the subsequent heat treatment causes the underlying far-UV sensitive resist to be dissolved. An interfacial layer is formed that is insoluble in the developer. Therefore, after patterning the upper photoresist film, it is necessary to descum the interface layer using oxygen plasma. As a result, either the number of mother turn formation steps increases, or it is difficult to remove only the interface layer with oxygen plasma without adversely affecting the upper resist pattern, making it virtually impossible to form a highly accurate resist pattern. It was difficult.
また、別の方法として下層に高感度なレジスト膜を、上
層に低感度なレジスト膜を設けるととＫよって、比較的
切シ立った或いは逆チー７４状のレゾスト・やターンを
形成する方法が知られている。しかしながら、感度差を
利用した２層レジストの場合は一般に同種の有機溶剤を
用いるため、レジスト同志が混じシ易く、均一な膜質、
膜厚のレジストの形成が困難となる。Another method is to provide a high-sensitivity resist film in the lower layer and a low-sensitivity resist film in the upper layer.Therefore, it is possible to form resists or turns in a relatively sharp or reversed chi-like shape. Are known. However, in the case of a two-layer resist that takes advantage of sensitivity differences, the same type of organic solvent is generally used, so the resists tend to mix with each other, resulting in uniform film quality and
It becomes difficult to form a thick resist.
本発明はレジスト膜の界面で互に混シ合ったり、或いは
不溶な界面層の生成のない多層レジスト膜を提供しよう
とするものである。The present invention aims to provide a multilayer resist film that does not mix with each other at the interface of the resist film or form an insoluble interface layer.
本発明は２種のレジスト膜の間に水溶性側脂膜を介在せ
しめることによって、上下層のレジストの有機溶剤に起
因するレジスト膜間の相溶、不溶な界面層の生成を防止
し、高精度の微細な多層レジス） ノｊターンの形成を
可能にしたことを骨子とする。By interposing a water-soluble side fat film between two types of resist films, the present invention prevents the formation of a compatible and insoluble interfacial layer between the resist films caused by the organic solvents of the upper and lower resist layers. (Multi-layered resist with fine precision) The main point is that it has made it possible to form a no-j turn.
上記水溶性樹脂膜は２種のレジスト膜を隔絶する役目を
する。かかる水溶性樹脂としては、例ｔ ハ、Ｎ ！ｊ
ビニルアルコール、メチルセルロース等を挙げることが
できる。こうした水溶性樹脂膜の厚さは３００〜３００
０Ｘの範囲にすることが望ましい。この理由はその膜厚
を３００Ｘ未満にすると、塗布むらやピンホールが発生
し易く上下層のレジスト膜の隔絶効果を十分に発揮でき
ない。かといってその膜厚さ３０００Ｘを越えると、上
層のレジスト膜のパターニング後、露出した水溶性樹脂
膜部分を水又は水を含む溶液で除去する際、サイド方向
の溶解が進行して高精度の多層レジストパターンの形成
が困難となる。なお、上層のレジストとしてアルカリ水
溶液で現像されるものを用いれば、該レジストの現像時
にその下の水溶性樹脂膜も溶解除去できる。The water-soluble resin film serves to isolate the two types of resist films. Examples of such water-soluble resins include T, N! j
Vinyl alcohol, methyl cellulose, etc. can be mentioned. The thickness of such a water-soluble resin film is 300 to 300
It is desirable to set it in the range of 0X. The reason for this is that if the film thickness is less than 300X, coating unevenness and pinholes are likely to occur, and the isolation effect between the upper and lower resist films cannot be sufficiently exhibited. However, if the film thickness exceeds 3000X, when the exposed water-soluble resin film portion is removed with water or a solution containing water after patterning the upper resist film, dissolution in the side direction will progress, making it difficult to achieve high precision. It becomes difficult to form a multilayer resist pattern. Note that if a resist that is developed with an alkaline aqueous solution is used as the upper layer resist, the water-soluble resin film thereunder can also be dissolved and removed during development of the resist.
次に、本発明の実施例を図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
実施例１
まず、半導体基板１上にＰＭＭＡを１．５μｍの厚さで
塗布し、この上にポリビニルアルコールを１０００１の
厚さで塗布し、更にポジ型フォトレジスト（ＡＺ −１
３５０にシラグレー社製）を５０００１の厚さで塗布し
た後、ベーキング処理節して基板１上にＰＭＭＡのポジ
型レジスト膜２゜月？リビニルアルコール膜３及びフォ
トレジスト膜４からなる多層レジスト膜を形成した（第
１図図示）。Example 1 First, PMMA was coated on a semiconductor substrate 1 to a thickness of 1.5 μm, polyvinyl alcohol was coated on top of this to a thickness of 10001, and a positive photoresist (AZ-1
350 (manufactured by Silagray Co., Ltd.) to a thickness of 50,001 mm, a baking process was performed, and a positive resist film of PMMA was formed on the substrate 1 for 2 months. A multilayer resist film consisting of a vinyl alcohol film 3 and a photoresist film 4 was formed (as shown in FIG. 1).
次いで、縮小投影露光装置を用いて上層のフォトレジス
ト膜４を露光した後、アルカリ水溶液系のノンメタル現
像液で現像した。この時、フォトレジスト膜の露光部が
溶解除去されて第１層レジストパターン５が形成される
と共に、該露光部下のポリビニルアルコール膜部分も溶
解除去されてポリビニルアルコール膜パターン６が形成
された（第２図図示）。Next, the upper photoresist film 4 was exposed using a reduction projection exposure apparatus, and then developed with an alkaline aqueous solution-based non-metal developer. At this time, the exposed portion of the photoresist film was dissolved and removed to form a first layer resist pattern 5, and the polyvinyl alcohol film portion under the exposed portion was also dissolved and removed to form a polyvinyl alcohol film pattern 6 (first layer resist pattern 5). (Figure 2 shown).
次いで、フォトレジストパターン５をマスクとして遠紫
外光を露出したＰＭＭＡレジスト膜２部分に選択照射し
た後、モノクロルベンゼン（現像液）を用いて現像した
。その結果、ＰＭＭＡレジストの遠紫外光の照射部が選
択的に溶解除去されてＰＭＭＡレジストパターン７が形
成され、これによｐ ＰＭＭＡレノストノやクーン７．
ポリビニルアルコール膜ハターン６及びフォトレジスト
・臂ターン５からなる多層レジストパターン８が形成さ
れた（第３図図示）。Next, using the photoresist pattern 5 as a mask, the exposed portions of the PMMA resist film 2 were selectively irradiated with deep ultraviolet light, and then developed using monochlorobenzene (developer). As a result, the far-ultraviolet light irradiated portion of the PMMA resist is selectively dissolved and removed to form a PMMA resist pattern 7, which results in the formation of a PMMA resist pattern 7.
A multilayer resist pattern 8 consisting of a polyvinyl alcohol film pattern 6 and a photoresist arm pattern 5 was formed (as shown in Figure 3).
しかして、本発明によれば上層の７オトレジスト膜４と
下層のＰＭＭＡレジスト膜２とがそれらの間のポリビニ
ルアルコール膜３により隔絶されているため、均質で均
一膜厚の多層レノスト膜を形成できる。その結果、この
多層レジメト膜を用いてリングラフィを行なうことによ
って第３図に示す如く微細かつ高精度の多層レジスト、
パターンを形成できる。According to the present invention, since the upper layer 7 photoresist film 4 and the lower layer PMMA resist film 2 are separated by the polyvinyl alcohol film 3 between them, it is possible to form a homogeneous multilayer Renost film with a uniform thickness. . As a result, by performing phosphorography using this multilayer regimen film, we were able to create a fine and highly accurate multilayer resist as shown in Figure 3.
Can form patterns.
また、ポリビニルアルコール膜３を介在させることによ
って下層のＰＭＭＡレジストを塗布した後、溶剤を蒸発
させるだめの熱処理を省略できる。Further, by interposing the polyvinyl alcohol film 3, heat treatment for evaporating the solvent after coating the lower layer PMMA resist can be omitted.
更に、上下層のレジスト膜の界面には不溶化した界面層
が存在しないので、それを取シ除くためのプラズマ酸素
のデスカム処理が不要となシ、ひいては工程の簡略化と
、プラズマ酸素の処理によるパターン精度の悪化を防止
できる。Furthermore, since there is no insolubilized interface layer at the interface between the upper and lower resist films, there is no need for plasma oxygen descum treatment to remove it. Deterioration of pattern accuracy can be prevented.
しかも、介在させたポリビニルアルコール膜３は上層の
フォトレジスト膜４の現像時に同時に除去されるため、
工程の増加を回避できる。Moreover, since the interposed polyvinyl alcohol film 3 is removed at the same time as the upper photoresist film 4 is developed,
It is possible to avoid an increase in the number of processes.
実施例２
まず、半導体基板上に増感剤を含むポジ型フォトレジス
） （０ＦＰＲｉ東京応化社製）を４０００１の厚さで
塗布し、この上にメチルセルロースを５００Ｘの厚さで
塗布し、更に通常のＩジ型フォトレジストを６０００’
Ｘの厚さで塗布した後ベーキング処理を施して基板上に
高感度フォトレジスト膜、メチルセルロース膜及び低感
度フォトレジスト膜からなる多層レジスト膜を形成した
。Example 2 First, a positive photoresist (0FPRi, manufactured by Tokyo Ohka Co., Ltd.) containing a sensitizer was coated on a semiconductor substrate to a thickness of 40001, methylcellulose was coated on top of this to a thickness of 500X, and then a normal I di-type photoresist of 6000'
After coating to a thickness of X, a baking treatment was performed to form a multilayer resist film consisting of a high-sensitivity photoresist film, a methyl cellulose film, and a low-sensitivity photoresist film on the substrate.
次いで、縮小投影型露光装置を用いて露光を行なった後
、ノンメタル現像液で現像して低感度フォトレジスト膜
の露光部を溶解除去し、その下のメチルセルロース部分
を除去し、更に高感度フォトレジスト膜の露光部分を溶
解除去して多層レジストパターンを形成した。Next, after exposure is performed using a reduction projection type exposure device, development is performed with a non-metal developer to dissolve and remove the exposed portion of the low-sensitivity photoresist film, and the underlying methyl cellulose portion is removed, followed by a high-sensitivity photoresist film. A multilayer resist pattern was formed by dissolving and removing the exposed portion of the film.
しかして、得られた多層レジスト膜やターンをＳＥＭで
観察したところ、非常に切り立ったエツジプロファイル
を有するサブミクロンノぞターンが形成されていること
が確認された。When the obtained multilayer resist film and turns were observed using a SEM, it was confirmed that submicron groove turns having a very sharp edge profile were formed.
なお、上記実施例では水溶性樹脂膜を上層のレジスト膜
の現像と同時に選択的に溶解除去したが、これに限定さ
れない。例えば上層のレジスト膜が有機溶剤からなる現
像液で現像される場合は、この現像工程後に露出した水
溶性樹脂膜を水等で溶解除去すればよい。この方法では
、水等による溶解除去工程が増えるが、従来の不溶化界
面層のデスカム工程のように酸素プラズマを用いるもの
ではないため、何んらパターン精度に悪影響を及ぼさな
い。In the above embodiment, the water-soluble resin film was selectively dissolved and removed at the same time as the upper resist film was developed, but the present invention is not limited thereto. For example, when the upper resist film is developed with a developer made of an organic solvent, the exposed water-soluble resin film may be dissolved and removed with water or the like after this development step. In this method, the process of dissolving and removing with water or the like is increased, but unlike the conventional descum process of the insolubilized interfacial layer, oxygen plasma is not used, so there is no adverse effect on pattern accuracy.
以上詳述した如く、本発明に係る多層レジスト膜によれ
ば２種のレジスト膜の界面で互に混シ合つたシ、或いは
不溶な界面層が生成されるのを防止でき、ひいてはとの
し・ソスト膜をリングラフィすることによって高精度で
微細な多層レジスト・クターンを簡単かつ効率よく形成
できる等顕著な効果を有する。As detailed above, the multilayer resist film according to the present invention can prevent mutual mixing or the formation of an insoluble interface layer at the interface of two types of resist films, and can also prevent the formation of an insoluble interface layer.・It has remarkable effects such as the ability to easily and efficiently form highly accurate and fine multilayer resist patterns by phosphorography of the Sost film.
第１図〜第３図は本発明の実施例１における多層レジス
トハターンの形成工程を示す断面図である。
１・・・半導体基板、２・・・ＰＭＡレジスト膜、３・
・・ポリビニルアルコール膜、４・・・フォトレジスト
膜、５・・フォトレノスト・ぐターン、６・・・ポリビ
ニルアルコール膜ノ９ターン、７・・・ＰＭＭＡ Ｉ／
シストパターン、８・・・多層レジストノＲターン。1 to 3 are cross-sectional views showing the process of forming a multilayer resist pattern in Example 1 of the present invention. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... PMA resist film, 3...
...Polyvinyl alcohol film, 4...Photoresist film, 5...Photorenost turn, 6...Polyvinyl alcohol film 9 turns, 7...PMMA I/
Cyst pattern, 8...Multilayer resist R turn.
Claims (1)
る多層レジスト膜。A multilayer resist film made by interposing a water-soluble resin film between two types of resist films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5072083A JPS59175725A (en) | 1983-03-26 | 1983-03-26 | Multilayer resist film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5072083A JPS59175725A (en) | 1983-03-26 | 1983-03-26 | Multilayer resist film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59175725A true JPS59175725A (en) | 1984-10-04 |
Family
ID=12866711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5072083A Pending JPS59175725A (en) | 1983-03-26 | 1983-03-26 | Multilayer resist film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59175725A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236823A (en) * | 1985-08-10 | 1987-02-17 | Fujitsu Ltd | Resist pattern formation |
| JPS62165651A (en) * | 1986-01-17 | 1987-07-22 | Tokyo Electron Ltd | Formation of resist pattern |
| JPH01273030A (en) * | 1988-04-26 | 1989-10-31 | Fujitsu Ltd | Production of semiconductor device |
| US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
| JPH06326018A (en) * | 1993-05-13 | 1994-11-25 | Nec Corp | Resist structure for pattern form and pattern forming method |
| EP1507171A2 (en) * | 2003-08-15 | 2005-02-16 | Fuji Photo Film Co., Ltd. | Light-Sensitive sheet comprising support, first and second light-sensitive layers and barrier layer |
| US7255967B2 (en) * | 2002-06-04 | 2007-08-14 | Fujifilm Corporation | Image forming method used in liquid crystal display device for both reflection and transmission modes |
| US8323871B2 (en) | 2010-02-24 | 2012-12-04 | International Business Machines Corporation | Antireflective hardmask composition and a method of preparing a patterned material using same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5955020A (en) * | 1982-09-24 | 1984-03-29 | Oki Electric Ind Co Ltd | Formation of minute pattern |
-
1983
- 1983-03-26 JP JP5072083A patent/JPS59175725A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5955020A (en) * | 1982-09-24 | 1984-03-29 | Oki Electric Ind Co Ltd | Formation of minute pattern |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6236823A (en) * | 1985-08-10 | 1987-02-17 | Fujitsu Ltd | Resist pattern formation |
| JPS62165651A (en) * | 1986-01-17 | 1987-07-22 | Tokyo Electron Ltd | Formation of resist pattern |
| US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
| JPH01273030A (en) * | 1988-04-26 | 1989-10-31 | Fujitsu Ltd | Production of semiconductor device |
| JPH06326018A (en) * | 1993-05-13 | 1994-11-25 | Nec Corp | Resist structure for pattern form and pattern forming method |
| US7255967B2 (en) * | 2002-06-04 | 2007-08-14 | Fujifilm Corporation | Image forming method used in liquid crystal display device for both reflection and transmission modes |
| EP1507171A2 (en) * | 2003-08-15 | 2005-02-16 | Fuji Photo Film Co., Ltd. | Light-Sensitive sheet comprising support, first and second light-sensitive layers and barrier layer |
| EP1507171A3 (en) * | 2003-08-15 | 2008-03-05 | FUJIFILM Corporation | Light-Sensitive sheet comprising support, first and second light-sensitive layers and barrier layer |
| US8323871B2 (en) | 2010-02-24 | 2012-12-04 | International Business Machines Corporation | Antireflective hardmask composition and a method of preparing a patterned material using same |
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