JPS59172279A - Zns light-emitting element - Google Patents
Zns light-emitting elementInfo
- Publication number
- JPS59172279A JPS59172279A JP58046385A JP4638583A JPS59172279A JP S59172279 A JPS59172279 A JP S59172279A JP 58046385 A JP58046385 A JP 58046385A JP 4638583 A JP4638583 A JP 4638583A JP S59172279 A JPS59172279 A JP S59172279A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metallic layer
- electrode
- region
- zns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
Abstract
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明はＺｎ５（硫、化曲鉛）発光素子に関する。[Detailed description of the invention] (b) Industrial application fields The present invention relates to a Zn5 (sulfur, curved lead) light emitting device.
青色発光素子材料として期待されている。またＺｎＳ単
結晶は自己補償効果が強くｐ型の導電型が得られない。It is expected to be used as a material for blue light-emitting devices. Furthermore, ZnS single crystal has a strong self-compensation effect, and p-type conductivity cannot be obtained.
従って祈る単結晶を用いた発光素子としては、ＭＩＳ（
金属−絶縁物一半導体）型の素子が研究されている。Therefore, as a light emitting device using a praying single crystal, MIS (
Metal-insulator-semiconductor type devices are being studied.
第１図は従来のこの種菓子を示しく１）は例えばＡＪ（
アルミニウム）をドーパントとして含有するｎ梨ＺｎＳ
単結晶基板、＋２１は該単結晶基板の一生面に積層され
た絶縁層であり、該絶、縁層は例えばＳｉ（’）２（二
酸化シリコン）からなる。１３）は上記絶縁層（２）上
に形成された金属層であり、該金属層は例えば金（Ａｕ
）からなる。１４）は上記基板ｆｉｌの裏面に形成され
たオーミック性の電極である。Figure 1 shows a conventional confectionery of this kind.1) For example, AJ (
nashi ZnS containing aluminum) as a dopant
The single-crystal substrate +21 is an insulating layer laminated on the entire surface of the single-crystal substrate, and the insulating layer is made of, for example, Si(')2 (silicon dioxide). 13) is a metal layer formed on the insulating layer (2), and the metal layer is made of, for example, gold (Au).
). 14) is an ohmic electrode formed on the back surface of the substrate fil.
尚、上記基板（１）は周知の高圧溶融法等により得られ
る。また折る方法で得られた結晶にはＺｎ空孔及び不要
な不純物が多く含まれているため、通常Ｉ Ｘ １０−
５Ｔｏｒｒ以上の真空中で９５０℃程度のＺｎ融液中に
長時間浸漬し、かつ祈る熱処理後上記基板（１）を急冷
することにより上記空孔及び不純物を除去する。更に上
記結晶の導電型を決定するｎ型ドーパントの導入は上記
結晶成長時に行なってもよく、また上記Ｚｎ融液中に祈
るドーパントを混入させることにより上記空孔及び不純
物の除去工程において結晶中にｎ型ドーパントを導入す
ることも可能である。Note that the substrate (1) can be obtained by a well-known high pressure melting method or the like. In addition, since the crystal obtained by the folding method contains many Zn vacancies and unnecessary impurities, it is usually I
The pores and impurities are removed by immersing the substrate (1) in a Zn melt at about 950° C. for a long time in a vacuum of 5 Torr or higher, and then rapidly cooling the substrate (1) after heat treatment. Furthermore, an n-type dopant that determines the conductivity type of the crystal may be introduced during the crystal growth, and by mixing a dopant into the Zn melt, it is possible to introduce an n-type dopant into the crystal in the process of removing vacancies and impurities. It is also possible to introduce n-type dopants.
祈る素子において、金属層（３）を一方の電極とし、金
属層Ｃ３）−電極１４）間に順方向バイアスを印加する
ことにより青色発光が得られた。In the device, blue light emission was obtained by using the metal layer (3) as one electrode and applying a forward bias between the metal layer C3) and the electrode 14).
然るに、祈る素子の量子効率を最良とするには上記絶縁
層（２）の層厚を３５０〜５ｏｏＸ程度にする必要性が
ある。ところが現在の技術ではこのように簿い５（０２
等からなる絶縁層（２）を均一に歩留り良く製造するこ
とは非常に難しく、ピンホール等が発生する危惧がある
。絶縁層（２）にピンホールが発生すると、斯るピンホ
ールを介して過大電流が基板（１）に印加されるので、
素子自体が破壊される。However, in order to maximize the quantum efficiency of the device, it is necessary to set the thickness of the insulating layer (2) to about 350 to 50X. However, with current technology, bookkeeping 5 (02
It is very difficult to manufacture the insulating layer (2) uniformly and with a high yield, and there is a risk that pinholes and the like may occur. When a pinhole occurs in the insulating layer (2), an excessive current is applied to the substrate (1) through the pinhole.
The element itself is destroyed.
（ハ）発明の目的
本発明は祈る点に鑑みてなされたもので、歩留りよく製
造可能なＺｎＳ発光素子を提供せんとするものである。(c) Purpose of the Invention The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a ZnS light emitting device that can be manufactured with high yield.
（勾 発明の構成
本発明者の実験によれば、第２図に示す如く、空中で９
５０℃〜１０００℃のＺｎ融液中に２０時間程度浸漬し
、その後上記基板（５）を水に５分間以上浸漬すること
により急冷すると、（１１１）Ａ面表面からろｏＯλ程
度の深さに亘って均一に約１０１０Ωｍの比抵抗を示し
、その他部分では改Ωｃｍ〜１０数Ωｍの比抵抗をした
。(Structure of the Invention According to the inventor's experiments, as shown in Fig. 2,
When the substrate (5) is immersed in a Zn melt at 50° C. to 1000° C. for about 20 hours and then rapidly cooled by immersing it in water for 5 minutes or more, the substrate (111) is immersed in a Zn melt at a depth of about Oλ from the A surface. The specific resistance was uniformly about 1010 Ωm over the entire area, and the other parts had a specific resistance of 10 Ωcm to 10-odd Ωm.
これは上記熱娠地中に融液状態のＺｎが結晶中に取込ま
れ、結晶中のＺｎ空孔羊を埋込むように作用するが、」
二記急冷時に（１１１）Ａ部近傍における結晶中のＺｎ
の方が（１１１）Ｂ部近傍の結晶中のＺｎより抜は易い
だめだと考えられる。This is because Zn in a molten state is incorporated into the crystal during the heat-absorbing process, and acts to embed Zn vacancies in the crystal.
Zn in the crystal near the (111) A part during the second quenching
It is thought that this is easier to remove than the Zn in the crystal near the (111)B part.
本発明は断る知見に一展づいてなされたもので、その構
成的特徴ばＺｎＳ単結晶基板の（１１１）入面上に金属
層を積層したことにある。The present invention was developed based on the above findings, and its structural feature is that a metal layer is laminated on the (111) entrance surface of a ZnS single crystal substrate.
犀）実施例
第６図は本発明の一実施例を示し、（１１）は−主面が
（１１１）Ａ面であるｎ型ＺｎＳ単結晶基板、に形成さ
れたオーミック性の電極である。Embodiment FIG. 6 shows an embodiment of the present invention, in which (11) is an ohmic electrode formed on an n-type ZnS single crystal substrate whose main surface is the (111)A plane.
上記基板（１υは金属層＋１２Ｊ及び電極ｑ３１形成前
に、２Ｘ １０ ’Ｔｏｒｒ程度の真空中で約９７０℃
のＺｎ融液中に２４時間程度浸漬し、その後基板（１υ
を水に６分程度浸漬することにより急冷した。従って既
述した如く基板（１１）の−主面より３００Ａ程度の深
さは比抵抗１０１０Ω副の高抵抗＠ｍ１１４１となり、
その他の部分は比抵抗故Ωｍ１１７）導電＠域１１５）
となった。The above substrate (1υ is heated at about 970°C in a vacuum of about 2X 10' Torr before forming the metal layer +12J and electrode q31)
The substrate (1υ
was quenched by immersing it in water for about 6 minutes. Therefore, as mentioned above, a depth of about 300A from the -main surface of the substrate (11) has a high resistance @m1141 with a specific resistance of 1010Ω.
Other parts are due to specific resistance Ωm117) Conductivity @ area 115)
It became.
ゆえに本実施例紫子では金属層０本高抵抗領域１１４１
％導電領域＋１５が実質的にＭＩＳ型構造となり、金属
層（１りを一方の電極として金属層０々−電極１．１３
１間に順方向バイアスを印加することにより青色発光が
得られた。またこのときの量子効率は第１図に示した従
来素子と同程度であった。Therefore, in this example Shiko, there is no metal layer and high resistance region 1141.
% conductive area +15 becomes substantially MIS type structure, metal layer (1 is one electrode, metal layer 0 - electrode 1.13
Blue light emission was obtained by applying a forward bias between 1 and 2. Further, the quantum efficiency at this time was comparable to that of the conventional element shown in FIG.
更に上記高抵抗領域Ｑ４Ｊの形成にあたっては結晶欠陥
が導入される惧れはなく、かつ均一なものが歩留りよく
得られる。Further, in forming the high resistance region Q4J, there is no risk of crystal defects being introduced, and a uniform region can be obtained with a high yield.
（へ）効 果
本発明のＺｎＳ発光素子は、絶縁層としてＺｎＳ基板内
に形成された、高抵抗領域を用い、かつに
所る領域はその形へあたって結晶欠陥の導入がなく均一
に得られるため素子の製造にあたっても高い歩留りが得
られる。(f) Effects The ZnS light emitting device of the present invention uses a high resistance region formed in a ZnS substrate as an insulating layer, and the desired region has a uniform shape without introducing crystal defects. As a result, high yields can be obtained in device manufacturing.
Ｌゴ
第１図は従来例を示す断面図、第２図ＡｚｎＳ単結晶の
結晶方位を示す斜視図、第６図は本発明の実施例を示す
断面図である。
１刊・・・ＺｎＳ単結晶基板、ＩＬ′ｌＪ・・・金属層
。
出頼人三洋電機株式会社FIG. 1 is a sectional view showing a conventional example, FIG. 2 is a perspective view showing the crystal orientation of an AznS single crystal, and FIG. 6 is a sectional view showing an embodiment of the present invention. 1st edition...ZnS single crystal substrate, IL'lJ...metal layer. Deyorito Sanyo Electric Co., Ltd.
Claims (1)
積層したことを特徴とするＺｎＳ発光素子。tl) A ZnS light emitting device characterized in that a metal layer is laminated on the (111)A surface of a ZnS single crystal substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046385A JPS59172279A (en) | 1983-03-18 | 1983-03-18 | Zns light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046385A JPS59172279A (en) | 1983-03-18 | 1983-03-18 | Zns light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59172279A true JPS59172279A (en) | 1984-09-28 |
Family
ID=12745668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58046385A Pending JPS59172279A (en) | 1983-03-18 | 1983-03-18 | Zns light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59172279A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113233A (en) * | 1988-09-02 | 1992-05-12 | Sharp Kabushiki Kaisha | Compound semiconductor luminescent device |
| WO2000046862A1 (en) * | 1999-02-05 | 2000-08-10 | Japan Energy Corporation | Photoelectric conversion functional element and production method thereof |
-
1983
- 1983-03-18 JP JP58046385A patent/JPS59172279A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5113233A (en) * | 1988-09-02 | 1992-05-12 | Sharp Kabushiki Kaisha | Compound semiconductor luminescent device |
| US5616937A (en) * | 1988-09-02 | 1997-04-01 | Sharp Kabushiki Kaisha | Compound semiconductor luminescent device |
| WO2000046862A1 (en) * | 1999-02-05 | 2000-08-10 | Japan Energy Corporation | Photoelectric conversion functional element and production method thereof |
| US6791257B1 (en) | 1999-02-05 | 2004-09-14 | Japan Energy Corporation | Photoelectric conversion functional element and production method thereof |
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