JPS59168913A - Gap forming method of thin film magnetic head - Google Patents

Gap forming method of thin film magnetic head

Info

Publication number
JPS59168913A
JPS59168913A JP4479083A JP4479083A JPS59168913A JP S59168913 A JPS59168913 A JP S59168913A JP 4479083 A JP4479083 A JP 4479083A JP 4479083 A JP4479083 A JP 4479083A JP S59168913 A JPS59168913 A JP S59168913A
Authority
JP
Japan
Prior art keywords
layer
gap
forming
magnetic
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4479083A
Other languages
Japanese (ja)
Other versions
JPH0370848B2 (en
Inventor
Kazunori Katagiri
片桐　一典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4479083A priority Critical patent/JPS59168913A/en
Publication of JPS59168913A publication Critical patent/JPS59168913A/en
Publication of JPH0370848B2 publication Critical patent/JPH0370848B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To prevent a film decrease of a gap layer and to form a gap having a accuracy by forming a protective layer of a magnetic material on a magnetic gap formed part, forming an insulating layer on a gap layer except the protective layer formed part, subsequently, forming a coil layer, and forming a magnetic layer of the upper part on an area containing the protective layer. CONSTITUTION:For instance, SiO2 is formed as a gap layer 5 to a film thickness of 6,000Angstrom by sputtering on a lower magnetic layer 2a formed on a substrate 1, and as for a protective layer 8, a magnetic material, for instance, NiFe is formed to a film thickness of about several thousand Angstrom on an area in which formation of a gap layer is prearranged. In order to form a coil layer 7 by plating, a thin conductive layer is formed on the whole surface of the substrate, and subsequently, the coil layer is formed by plating. After this process, ion etching is executed in order to remove the conductive layer. In accordance with a sectional shape of the coil layer 7, a difference of distribution in a wafer of an etching rate, etc., over-etching of 4-5min is necessary, and as for the protective layer 8, its film thickness is decreased by the overetching, but the film thickness of the gap layer 5 is kept as it is. The remaining part of the protective layer 8 is a magnetic material, therefore, it becomes a part of a magnetic layer 2 of the upper part.

Description

【発明の詳細な説明】 ＋１１発明の技術分野 本発明は薄膜磁気ヘッドのギャップ形成方法、詳しくは
ギャップ層上にギャップを保護する磁性体の保護１−を
設けることにより、薄膜ヘッドの製造工程におけるイオ
ンエツチングによるギャップ（１） 層の膜厚減少を防止するギャップ形成方法に関する。Detailed Description of the Invention +11 Technical Field of the Invention The present invention relates to a method for forming a gap in a thin-film magnetic head, and more particularly, to a method for forming a gap in a thin-film magnetic head, and more specifically, by providing a magnetic material protection 1- for protecting the gap on a gap layer, a method for forming a gap in a thin-film magnetic head is provided. Gap by Ion Etching (1) This invention relates to a gap forming method for preventing a decrease in layer thickness.

（２）技術の背景 薄膜磁気ヘッドは第１図に平面図で示される構成のもの
で、同図において１は基板（ウェハ）、２は磁性層、３
はギャップ、４はコイルのための端子をそれぞれ示す。(2) Background of the technology A thin-film magnetic head has a configuration shown in a plan view in FIG. 1, where 1 is a substrate (wafer), 2 is a magnetic layer, and 3
4 indicates a gap, and 4 indicates a terminal for a coil.

従来のギャップ形成方法としては、下部磁性層形成後に
ギャップ層を形成する方法と、絶縁層形成後上部磁性層
形成前にギャップ層を形成する方法とがあるが、本発明
は前の方法に関するものである。。Conventional gap forming methods include a method in which a gap layer is formed after forming a lower magnetic layer, and a method in which a gap layer is formed after forming an insulating layer but before forming an upper magnetic layer. The present invention relates to the former method. It is. .

従来の薄膜磁気ヘッドの製造方法を第１図のｎ−ｎ線に
沿う第２図を参照して説明すると、先ず第２図（ａｌに
示される如＜、基板１上に下部磁性層２ａを例えばパー
マロイ　（ＮｉＦｅ）で形成し、その上に二酸化シリコ
ン（５ｉ０２）膜（ギャップ１ｉｉｔ）５を形成する。A method of manufacturing a conventional thin film magnetic head will be explained with reference to FIG. 2 taken along line nn of FIG. 1. First, as shown in FIG. For example, it is formed of permalloy (NiFe), and a silicon dioxide (5i02) film (gap 1iit) 5 is formed thereon.

次いで、第２図（ｂｌに示される如く絶縁層６を形成し
、その上にコイル層７を形成する。Next, as shown in FIG. 2 (bl), an insulating layer 6 is formed, and a coil layer 7 is formed thereon.

引続き第２図ｔＣ）に示される如く絶縁層６ａをコ（２
） イル層７の十に形成し、その上に磁性層２を形成する。Subsequently, as shown in FIG. 2 (tC), the insulating layer 6a is
) The magnetic layer 2 is formed on top of the magnetic layer 7.

第２図ＦＣ＋においζ、ｌ’ｌ　ｌで囲む部分がギャッ
プ５ａであり、ごこから薄膜磁気・＼ソトで発生する磁
束がもれ、このもれ磁束によって媒体に情報の書込みが
行われる。In FIG. 2 FC+, the part surrounded by ζ, l'l l is a gap 5a from which magnetic flux generated by thin film magnetism leaks, and information is written on the medium by this leaked magnetic flux.

（３）従来技術と問題点 上記の工程においてコイル層７を形成するとき、ウェハ
は導電性がないため蒸着またはスパッタにより、基板全
面に薄い導電層を形成し、その上にメッキによりコイル
層を形成するが、そのとき作られた導電層は例えばイオ
ンエツチングによっ′ζ除去する。そのときギャップ５
ａＯ）　５ｉ０２股もエツチングされてその膜厚が減少
する。(3) Prior art and problems When forming the coil layer 7 in the above process, since the wafer is not conductive, a thin conductive layer is formed on the entire surface of the substrate by vapor deposition or sputtering, and then the coil layer is formed by plating on top of the thin conductive layer. However, the conductive layer formed at that time is removed by, for example, ion etching. then gap 5
aO) The 5i02 crotch is also etched and its film thickness is reduced.

第２図（ｄ＋は第２図（Ｃ１の円ｌで囲む部分の拡大図
であるが、ギャップ層の膜厚は最初ｇであったものがそ
れより小なるｇ′の膜厚になる。FIG. 2 (d+ is an enlarged view of the part surrounded by circle l in FIG. 2 (C1), and the thickness of the gap layer, which was initially g, becomes g', which is smaller than that.

ギャップＩ−の膜厚は、所望の磁気ヘッド特性が得られ
るように設計の段階で厳しく制御された値をもつことが
要求される。そのＩＦ７厚が減少する（３） と、予定した薄膜ヘッドの特性、例えば記録密度、再生
出力が得られない。The thickness of the gap I- is required to have a value that is strictly controlled at the design stage so that desired magnetic head characteristics can be obtained. If the IF7 thickness decreases (3), the expected characteristics of the thin film head, such as recording density and reproduction output, cannot be obtained.

そこでギャップ層のエツチングによる膜厚を見込んで最
初にエツチングで除去される分だけより厚目にギャップ
層を形成することが提案されたが、５ｉ０２膜は通常６
０００人の膜厚であるために、かかる提案を実施するこ
とは制御性と再現性の面から困難であることが判明した
。Therefore, it was proposed to form the gap layer thicker by the amount that would be removed by etching, taking into account the thickness of the gap layer due to etching.
It has been found that implementing such a proposal is difficult in terms of controllability and reproducibility because the film thickness is approximately 1,000 mm.

（４）発明の目的 本発明は上記従来の問題点に鑑み、薄膜磁気ヘット製造
工程において、コイル層形成のために設けた導電１−の
イオンエツチングによるギャップ層の膜減りを防止し、
精度の良いギャップ形成方法を提供するにある。(4) Purpose of the Invention In view of the above-mentioned conventional problems, the present invention prevents film thinning of the gap layer due to ion etching of the conductive layer 1- provided for forming the coil layer in the manufacturing process of a thin film magnetic head.
The purpose is to provide a highly accurate gap forming method.

（５）発明の構成 そしてこの目的は本発明によれば、薄膜磁気ヘッドを形
成する基板に下部の磁性層を形成し当該磁性層上にギャ
ップ層を形成する工程、ギャップ層上の磁気ギャップ形
成部分上に磁性体材料の保護層を形成する工程、前記保
護層形成部以外の（４） ギャップ層」二に絶縁層次いでメッキによりコイル層を
形成しイオンエツチングでコイル層のメッキの　ときに
設けた導電１ｍを除去する上程、および前記保護層を含
む領域上に上部の磁性層を形成することを特徴とする薄
膜磁気ヘッドの形成力法を提供するごとによって達成さ
れる。(5) Structure and object of the invention According to the invention, a step of forming a lower magnetic layer on a substrate forming a thin film magnetic head and forming a gap layer on the magnetic layer, and forming a magnetic gap on the gap layer. Step of forming a protective layer of magnetic material on the part other than the protective layer forming part (4) Gap layer 2. Forming a coil layer by plating an insulating layer, and forming it at the time of plating the coil layer by ion etching. This is achieved by providing a method for forming a thin-film magnetic head, which is characterized in that the conductive layer 1m is removed, and an upper magnetic layer is formed on the region including the protective layer.

（６）発明の実施例 以下本発明実施例を図面によって詳説する。(6) Examples of the invention Embodiments of the present invention will be explained in detail below with reference to the drawings.

本発明の実施例は第２図に類似の第３図に示され、第３
図において既に図示した部分と同じ部分は同一符号を付
して表示する。An embodiment of the invention is shown in FIG. 3, which is similar to FIG.
In the figures, the same parts as those already illustrated are indicated by the same reference numerals.

本実施例では、先ず第３図（ａｌに示される如く、基板
１上に形成された下部研性ｍＺａ上にギヤツブ層５とし
て例えばＳｉＯ２を６０００人の膜厚にスパッタで形成
し、保護Ｊｍ１８を、Ｋｌ性体例えばＮｊＦｅを第３図
１ａ）に示される如くにギャップ層形成予定領域上に数
千人程度の膜厚に形成する。In this example, first, as shown in FIG. 3 (al), a gear layer 5 of SiO2, for example, is formed by sputtering to a thickness of 6,000 mm on the lower abrasive mZa formed on the substrate 1, and a protective film 18 is formed. , a Kl-based material such as NjFe is formed to a thickness of several thousand layers on the region where the gap layer is to be formed, as shown in FIG. 3 (a).

第３図ｆｂｌに示される如くコイル層７をメッキで形成
するために基板全面に薄い導電層を形成し、引続きメッ
キでコイル１−を形成する。かかる」工程（５） の後に導電層を除去するために、イオンエツチングを行
う。この場合、コイル層７の断面形状、エツチングレー
トのウェハ内分布の差などから、４〜５分のオーバー・
エツチングが必要である。このとき保護層８はオーバー
・エツチングにより膜厚が減少するがギャップ層５の膜
厚はそのまま保存される。保護１−８の残った部分は磁
性体なので、上部の磁性層２の一部となる。As shown in FIG. 3fbl, in order to form the coil layer 7 by plating, a thin conductive layer is formed on the entire surface of the substrate, and then the coil 1- is formed by plating. After this step (5), ion etching is performed to remove the conductive layer. In this case, due to the cross-sectional shape of the coil layer 7 and the difference in the etching rate distribution within the wafer, an over-etching time of 4 to 5 minutes is required.
Etching is required. At this time, the thickness of the protective layer 8 is reduced due to over-etching, but the thickness of the gap layer 5 is maintained as it is. Since the remaining portion of the protection 1-8 is a magnetic material, it becomes a part of the upper magnetic layer 2.

従来技術では上部の磁性層２を形成する際にフォトレジ
ストによりパターン形成を行うが、第１図のギャップ３
と磁性Ｎ２は段差が著しいためギャップ３の部分上のフ
ォトレジスト膜厚が厚くなりパターン形成が困難であっ
た。しかし本実施例では、保護層８の厚さも加わって従
来と比較し°ζ、ギャップ３の部分と磁性層２の段差が
緩和され、パターン形成が容易になるという利点もある
。In the conventional technology, when forming the upper magnetic layer 2, a pattern is formed using a photoresist, but the gap 3 in FIG.
and magnetic N2 had a significant step difference, making the photoresist film thicker on the gap 3 portion, making it difficult to form a pattern. However, this embodiment also has the advantage that the thickness of the protective layer 8 is added, and the difference in level between the gap 3 and the magnetic layer 2 is reduced by °ζ compared to the prior art, making pattern formation easier.

上記の工程において、上部の磁性Ｉ５！２の厚さが変化
することが考えられるが、保護層８の厚さは容易に計測
でき、所望の磁性層の厚さから保護層の厚さを引いた分
だけの厚さで上部磁性層を形（６） 成すればよい。史には、保護１−８の厚さは、たかだか
数十人程度の；Ｉ９厚であるのでミクし】ン・オーダー
の磁性層の厚さに対しては、無視しつる程度のものであ
る。従って、保護層８の上にそのまま所望の厚さのＵ？
磁性層形成したとしても誤差は数パーセンｉ・を超える
ことはない。In the above process, the thickness of the upper magnetic I5!2 may change, but the thickness of the protective layer 8 can be easily measured, and the thickness of the protective layer can be subtracted from the desired magnetic layer thickness. The upper magnetic layer may be formed with a thickness corresponding to the thickness of the upper magnetic layer (6). Historically, the thickness of the protective layer 1-8 is at most about a few dozen layers; . Therefore, the desired thickness of U?
Even if a magnetic layer is formed, the error will not exceed several percent i.

（７）発明の効果 以上詳細に説明した如く、本発明によれば、薄膜磁気−
，ソトの製造においてギャップｊ−のイオンエツチング
による１漠減りを防止することができるので、所望のギ
ャップ層厚をｔＷ度良く形成することが可１ｊヒとなり
、所望される薄１１東磁気ヘッドの特性を得るに効果大
Ｃある。更には、」二部の磁性１ｄの形成が従来技術の
場合よりもより容易に形成されうる効果もある。(7) Effects of the Invention As explained in detail above, according to the present invention, thin film magnetic
Since it is possible to prevent the gap j- from being slightly reduced by ion etching in the manufacturing of the magnetic head, it is possible to form the desired gap layer thickness with a high degree of tW, and to form the desired thin 11 East magnetic head. It is very effective in obtaining characteristics. A further advantage is that the two-part magnetic 1d can be formed more easily than in the prior art.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は薄１１９磁気ヘットの平面図、第２図は第１図
のＩＩ　−ＩＩ線に沿う１９ｉ面図、第３図は本発明の
方法を実施する工程における薄１模磁気ヘッドの断１ｌ
ｒｉ図である。 （７） １一基板、２−磁性層、２ａ−・下部の磁性層、３−ギ
ャップ部、４一端子、５−５ｉ０２膜、５ａ−ギャップ
、６．６ａ−絶縁層、７−コイル層、８−保護層 （８）FIG. 1 is a plan view of a thin 119 magnetic head, FIG. 2 is a 19i plane view taken along line II-II in FIG. 1, and FIG. 1l
ri diagram. (7) 1-substrate, 2-magnetic layer, 2a--lower magnetic layer, 3-gap portion, 4-terminal, 5-5i02 film, 5a-gap, 6.6a-insulating layer, 7-coil layer, 8-Protective layer (8)

Claims (1)

【特許請求の範囲】[Claims] 薄膜磁気ヘッドを形成する基板に下部の磁性層を形成し
当該磁性層上にギャップ１ｍｌを形成する工程、ギャッ
プ１−上の磁気ギャップ形成部分上に磁性体材料の保護
層を形成する工程、前記保護１−形成部以外のギャップ
１−上に絶縁層次いでメッキによりコイル層を形成しイ
オンエツチングでコイル１ｉのメッキのときに設けた導
電層を除去する工程、およびＭｉＩ記保護層を含む領域
上に上部の磁性）−を形成することを特徴とする薄膜磁
気ヘッドの形成力法。a step of forming a lower magnetic layer on a substrate forming a thin film magnetic head and forming a gap of 1 ml on the magnetic layer; a step of forming a protective layer of a magnetic material on the magnetic gap forming portion above gap 1-; Protection 1 - Step of forming a coil layer by plating on the gap 1 other than the forming part, and removing the conductive layer provided when plating the coil 1i by ion etching, and on the area containing the MiI protection layer. A forming force method for a thin film magnetic head, which is characterized in that an upper magnetic layer is formed on the magnetic head.
JP4479083A 1983-03-17 1983-03-17 Gap forming method of thin film magnetic head Granted JPS59168913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4479083A JPS59168913A (en) 1983-03-17 1983-03-17 Gap forming method of thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4479083A JPS59168913A (en) 1983-03-17 1983-03-17 Gap forming method of thin film magnetic head

Publications (2)

Publication Number Publication Date
JPS59168913A true JPS59168913A (en) 1984-09-22
JPH0370848B2 JPH0370848B2 (en) 1991-11-11

Family

ID=12701202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4479083A Granted JPS59168913A (en) 1983-03-17 1983-03-17 Gap forming method of thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS59168913A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62175922A (en) * 1986-01-29 1987-08-01 Fujitsu Ltd Production of thin film magnetic head
US7916424B2 (en) 2007-05-07 2011-03-29 International Business Machines Corporation Magnetic head with wear resistant portion between an overcoat formed above a transducer of the magnetic head and a media-proximal surface of the magnetic head

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62175922A (en) * 1986-01-29 1987-08-01 Fujitsu Ltd Production of thin film magnetic head
US7916424B2 (en) 2007-05-07 2011-03-29 International Business Machines Corporation Magnetic head with wear resistant portion between an overcoat formed above a transducer of the magnetic head and a media-proximal surface of the magnetic head

Also Published As

Publication number Publication date
JPH0370848B2 (en) 1991-11-11

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