JPS59168446A - Washing method - Google Patents
Washing methodInfo
- Publication number
- JPS59168446A JPS59168446A JP4255183A JP4255183A JPS59168446A JP S59168446 A JPS59168446 A JP S59168446A JP 4255183 A JP4255183 A JP 4255183A JP 4255183 A JP4255183 A JP 4255183A JP S59168446 A JPS59168446 A JP S59168446A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- mask
- wafer
- pure water
- shower
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005406 washing Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 13
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 9
- 239000001569 carbon dioxide Substances 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 claims description 9
- 230000005611 electricity Effects 0.000 abstract description 10
- 230000003068 static effect Effects 0.000 abstract description 10
- 239000000428 dust Substances 0.000 abstract description 4
- 230000005587 bubbling Effects 0.000 abstract description 2
- 238000001179 sorption measurement Methods 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 238000011010 flushing procedure Methods 0.000 description 4
- 241000257465 Echinoidea Species 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、ホトレジスト工程に於て、ウニ／Ｓ−を露
光する際使用されるマスク又はレチクルの洗浄工程とウ
ェノ・−の洗浄工程の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in the process of cleaning a mask or reticle used when exposing a sea urchin/S- and the process of cleaning a wafer in a photoresist process.
従来、マスク及びレチクルの洗浄工程は一般的（二次の
様になる。Traditionally, mask and reticle cleaning processes are common (second order).
■洗浄→■シャワー水洗→■乾燥→■洗剤（非イオン系
）によるこすり洗い →■シャワー水洗→■乾燥。■Washing → ■Shower washing → ■Drying → ■Scrubbing with detergent (non-ionic) →■Shower washing → ■Drying.
■の洗浄では、ウニ・・−を露光する際に付着したホト
レジストを除去する為に１Ｍ機剥離剤に、浸す方法や、
硫酸と硝酸を使用する酸洗浄方法がある。■の洗いは、
■の洗浄で取れなかった様な異物を、洗剤をしみこませ
たスポンジ等で、こすり落とす、工程である。近年（＝
於て、半導体装置は集積度が高まり、半導体素子の微細
化に伴ない、コンタクト式目合せ露光機のかわりに、縮
少投影式目合せ露光機が使用されるに従い、レチクルの
洗浄の機会も増加しているが、レチクルは、ウニ・・−
等に接触する事はまず無い為、■の洗いの工程は、省略
されることも多い。一方■の洗いと■の洗いの水洗は、
■の洗い、■の洗い等で使用した、有機剥離剤、酸など
の無機剥離剤、洗剤やマスク等から、除去された、塵埃
等を洗い流す工程である。For cleaning in (3), there is a method of soaking sea urchins in 1M machine stripping agent to remove the photoresist that adheres when exposing them.
There is an acid cleaning method that uses sulfuric acid and nitric acid. ■Washing is
This is the process of scrubbing away foreign matter that could not be removed by washing with a detergent-soaked sponge. In recent years (=
As the degree of integration of semiconductor devices increases and the miniaturization of semiconductor elements, reduced projection type alignment exposure machines are used instead of contact type alignment exposure machines, and opportunities for cleaning reticles also increase. Although it is increasing, the reticle is a sea urchin...
Since it is unlikely that the product will come into contact with other objects, the washing step (■) is often omitted. On the other hand, washing with ■ and washing with water,
This is a process of washing away dust and the like that was removed from organic stripping agents, inorganic stripping agents such as acids, detergents, masks, etc. used in washing (1) and (2).
これには、通常、純水なシャワー状にマスク又はレチク
ルにあびせるが、当然、純水の流量乞ふやし、シャワー
の圧力を上げれば上げる程洗い落とす能力はｌ増加する
。しかし、純水がマスク又は、レチクルのクロム面にあ
たった時に発生する静電気も増加し、この為、マスク、
レチクルのクロムの欠落を起こすという欠点があった。Usually, this is done by showering pure water onto the mask or reticle, but of course, the higher the flow rate of pure water and the higher the pressure of the shower, the greater the ability to wash it off. However, the static electricity generated when pure water hits the chrome surface of the mask or reticle also increases, and for this reason, the mask,
The drawback was that the chrome on the reticle was missing.
更に、この静電気により、イオン化した塵埃等を、マス
ク、レチクル面に、吸着させるという様な問題も生じて
いる。又ウェハーに関しても同様で、水洗により静電気
を生じ、ゲートショートを引きおこす。Furthermore, this static electricity causes problems such as ionized dust and the like being attracted to the mask and reticle surfaces. The same goes for wafers; washing them with water generates static electricity, which causes gate shorts.
本発明は、上述の従来のウェハー又はマスク及びレチク
ルの洗浄方法の欠点を除去し、極めて高い再現性で、洗
浄度の非常に高い、洗浄方法を提供するものである。The present invention eliminates the drawbacks of the conventional wafer or mask and reticle cleaning methods described above and provides a cleaning method with extremely high reproducibility and extremely high degree of cleaning.
本発明においては、ウェハー又は、マスク及びレチクル
を、カスケード槽内で炭酸ガスをバブルし、炭酸ガスを
バブルしたシャワー状の純水で洗い流すことを特徴とす
る。The present invention is characterized in that carbon dioxide gas is bubbled into the wafer or mask and reticle in a cascade bath, and the wafer or mask and reticle are washed away with a shower-like pure water in which carbon dioxide gas is bubbled.
本発明によれば、マスク及びレチクルのシャワー水洗の
時、純水中に炭酸ガスを、バブルすることによって、マ
スク及びレチクルに発生する静電気を防ぎ、それにより
、クロムの欠落や、塵埃の吸着を防止することができる
。ウェハーに関して言えばゲートショートを防止するこ
とができる又、このこと（二より、純水の流量や、シャ
ワー圧を高めることができ、シャワー水洗の洗浄能力を
高めることができる。According to the present invention, when the mask and reticle are washed in the shower, carbon dioxide gas is bubbled into the pure water to prevent static electricity generated on the mask and reticle, thereby preventing chromium missing and dust adsorption. It can be prevented. Regarding wafers, it is possible to prevent gate short circuits, and this also increases the flow rate of pure water and the shower pressure, thereby increasing the cleaning performance of the shower.
次に図面を用いて、マスク、レチクルの洗浄工程中のシ
ャワー水洗工程について、従来の方法と本発明による方
法について説明する。Next, a conventional method and a method according to the present invention will be described with reference to the drawings regarding the shower washing step in the mask and reticle washing step.
第１図は従来のシャワー水洗の方法の例として、純水の
みＣ二よるシャワー水洗の方法を示す図である。第１図
において、マスク又はレチクル１が、支持板２に支持さ
れ、支持板に垂直に設けられた、シャワーノズル３によ
り、吹き出る純水により。FIG. 1 is a diagram showing a shower flushing method using only pure water C2 as an example of a conventional shower flushing method. In FIG. 1, a mask or reticle 1 is supported by a support plate 2, and purified water is blown out from a shower nozzle 3 provided perpendicularly to the support plate.
マスク又はレチクルの水洗が行なわれる。この方法では
、マスク又はレチクルに静電気を生じ、種種の欠点を生
じる。The mask or reticle is washed with water. This method creates static electricity on the mask or reticle, resulting in various drawbacks.
一方、本発明のシャワー水洗の方法（二ついて実施例を
説明する。On the other hand, two embodiments of the shower flushing method of the present invention will be described.
第、２図においては、マスク又はレチクル４が支持板５
に支持される。純水用配管６に炭酸ガスを流す配管７を
接続し、純水中に炭酸ガスをバブルさせ、支持板に垂直
に設けられたノズルより、純水を、シャワー状に、マス
ク又はレチクルに吹きつける。この方法によると、マス
ク又はレチクルに静電気を生じることなく、シャワー水
洗を行うことができる。In FIGS. 2 and 2, the mask or reticle 4 is attached to the support plate 5.
Supported by A pipe 7 for flowing carbon dioxide gas is connected to the pure water pipe 6, carbon dioxide gas is bubbled in the pure water, and the pure water is sprayed onto the mask or reticle in a shower-like manner from a nozzle installed vertically on the support plate. Put on. According to this method, shower washing can be performed without generating static electricity on the mask or reticle.
以上の様に、本発明によれば、純水の流量とシャワー圧
を高めることができるので、洗浄能力を高めることがで
き、しかも、クロムの欠落を防止することができる。ウ
ェハーの水洗に関しても同様で静電気によるゲートショ
ート等を防止することができる。又ウェハーやマスクや
レチクルを保管するカスケード槽内Ｃ二炭酸ガスをバブ
ルするとさらに静電気防止の効果がある。As described above, according to the present invention, it is possible to increase the flow rate of pure water and the shower pressure, so that the cleaning ability can be increased and, moreover, the loss of chromium can be prevented. The same applies to washing the wafer with water, and gate short circuits due to static electricity can be prevented. Furthermore, bubbling the C2 carbon dioxide gas in the cascade tank in which wafers, masks, and reticles are stored has an additional effect of preventing static electricity.
第１図は、従来のシャワー水洗方法を示す為の図であり
・第２図は、本発明による実施例を示す図である。
尚、図において、１，４・・・・・・マスク又はレチク
ル、２．５・・・・・・支持板、３・・・・・・ノズル
、６・・・・・・純水用配管、７・・・・・・炭酸ガス
用配管である。FIG. 1 is a diagram showing a conventional shower flushing method, and FIG. 2 is a diagram showing an embodiment according to the present invention. In addition, in the figure, 1, 4... Mask or reticle, 2.5... Support plate, 3... Nozzle, 6... Piping for pure water. , 7... Piping for carbon dioxide gas.
Claims (1)
水洗工程に於て、カスケード清白で炭酸ガスをバブルし
、炭酸ガスをバブルした純水をシャワー状（−ふきかけ
ることを％徴とする洗浄方法。j during the cleaning process of wafers, masks, reticles, etc.
In the water washing process, carbon dioxide gas is bubbled in a cascade cleaner, and the cleaning method is characterized by sprinkling pure water with bubbled carbon dioxide gas in a shower-like manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4255183A JPS59168446A (en) | 1983-03-15 | 1983-03-15 | Washing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4255183A JPS59168446A (en) | 1983-03-15 | 1983-03-15 | Washing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59168446A true JPS59168446A (en) | 1984-09-22 |
Family
ID=12639187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4255183A Pending JPS59168446A (en) | 1983-03-15 | 1983-03-15 | Washing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59168446A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175124A (en) * | 1991-03-25 | 1992-12-29 | Motorola, Inc. | Process for fabricating a semiconductor device using re-ionized rinse water |
| US5873380A (en) * | 1994-03-03 | 1999-02-23 | Mitsubishi Denki Kabushiki Kaisha | Wafer cleaning apparatus |
| EP0789389A3 (en) * | 1996-02-08 | 1999-08-25 | Nec Corporation | Method of peeling photo-resist layer without damage to metal wiring |
| US6367490B1 (en) * | 1998-11-02 | 2002-04-09 | Tokyo Electron Limited | Processing apparatus and processing method |
-
1983
- 1983-03-15 JP JP4255183A patent/JPS59168446A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175124A (en) * | 1991-03-25 | 1992-12-29 | Motorola, Inc. | Process for fabricating a semiconductor device using re-ionized rinse water |
| US5873380A (en) * | 1994-03-03 | 1999-02-23 | Mitsubishi Denki Kabushiki Kaisha | Wafer cleaning apparatus |
| EP0789389A3 (en) * | 1996-02-08 | 1999-08-25 | Nec Corporation | Method of peeling photo-resist layer without damage to metal wiring |
| US6367490B1 (en) * | 1998-11-02 | 2002-04-09 | Tokyo Electron Limited | Processing apparatus and processing method |
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